EP2621937A2 - High speed rf divider - Google Patents
High speed rf dividerInfo
- Publication number
- EP2621937A2 EP2621937A2 EP11763742.1A EP11763742A EP2621937A2 EP 2621937 A2 EP2621937 A2 EP 2621937A2 EP 11763742 A EP11763742 A EP 11763742A EP 2621937 A2 EP2621937 A2 EP 2621937A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- clock
- positive
- divider
- transistors
- outputs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007363 ring formation reaction Methods 0.000 claims abstract description 10
- 230000006872 improvement Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 9
- 230000000295 complement effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K21/00—Details of pulse counters or frequency dividers
- H03K21/08—Output circuits
- H03K21/12—Output circuits with parallel read-out
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K21/00—Details of pulse counters or frequency dividers
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K21/00—Details of pulse counters or frequency dividers
- H03K21/02—Input circuits
- H03K21/026—Input circuits comprising logic circuits
Definitions
- the present invention relates generally to RF clock dividers, in particular to high speed RF differential, quadrature clock divider designs.
- Radio Frequency (RF) clock dividers are well known and commonly used in communication systems.
- the clock divider is an important building block in many RF circuits, such as the phase-locked loop (PLL) circuit.
- PLL phase-locked loop
- the output of a voltage-controlled oscillator (VCO) is divided down by a clock divider to a frequency output by a temperature- compensated crystal oscillator (TCXO) (e.g., typically from 10 MHz to 30 MHz).
- TCXO temperature- compensated crystal oscillator
- the divided signal and TCXO frequencies are compared in a phase/frequency detector, and the output difference signal is filtered and used to adjust the VCO output frequency.
- clock divider Another important application of a clock divider is to generate related clock signals having certain phase relationships.
- Most modern wireless communication systems employ modulation schemes utilizing complex values, with modulated symbols occupying both In-phase (I) and Quadrature (Q) vector space, where the I and Q axes represent a phase shift of 90 degrees.
- Frequency downconverting mixers and demodulators are thus commonly implemented with separate I and Q signal paths.
- a clock divider that not only frequency-divides a periodic signal from a source (e.g., a crystal oscillator or VCO), but also supplies the divided clock in two outputs, one phase-shifted by 90 degrees from the other, is particularly advantageous.
- a source e.g., a crystal oscillator or VCO
- the multi-phase frequency divider approach is easier to implement, consumes lower power, and offers smaller phase imbalance.
- Figure 1 depicts a conventional, latch-ring implementation of a balanced, quadrature- phase, divide-by-two clock divider circuit .
- This architecture is based on two D-latches connected in series, and clocked by alternate phases of a differential clock signals.
- Cp is a positive clock signal clocking the first D-latch.
- Cn is a balance, negative clock signal - 180 degrees out of phase with Cp - clocking the second D-latch.
- the input of the first latch is the inverted output of the second latch.
- the outputs AA and CC comprise one balanced clock output having half the frequency of Cp/Cn.
- the outputs BB and DD comprise a second balanced clock output, also having half the frequency of Cp/Cn, and being 90 degrees out of phase with AA/CC.
- Conventional RF clock divider circuits often exhibit numerous deficiencies. They have a limited maximum operating frequency, and/or high current consumption. They may lack a full swing output signal swing (rail-to-rail). Some designs are not balanced, or not fully differential. Some designs impose a high capacitive load in the driving circuit, (e.g., a VCO). In addition, some divider topologies have limited sensitivity when the input signal is small.
- high-speed RF differential, Quadrature, divide-by-two clock divider designs are based on inverters and clocking circuits connected in a serial ring formation.
- only NMOS transistors are used in the inverters, and only PMOS transistors are used in the clocking circuits.
- This structure uses only 12 transistors.
- the input can be coupled directly to a VCO output, and provides minimum loading, as each VCO output is connected to only two transistors.
- the RF-divider includes a pair of latches, each comprising a cross-coupled PMOS transistor pair operative to force complimentary voltage values at the outputs of each latch.
- the latches are connected between a positive voltage supply node and four central nodes.
- the RF-divider also includes four NAND gates connected in a serial ring formation, each stage comprising a pair of stacked NMOS transistors.
- the NAND gates are connected between the central nodes and a ground node, and each central node connected to a gate of one transistor in each NAND gate.
- Positive and negative differential RF clock inputs are each connected to a gate of one transistor in each NAND gate.
- the positive and negative clock inputs alternate at each successive NAND gate in the ring.
- the latches are operative to maintain complimentary states of the central nodes when the NAND gates are inactive.
- one NAND gate is active and operative to invert the outputs of an associated latch.
- the RF-divider includes positive and negative differential RF clock inputs and four clocked inverter stages connected in a serial ring formation.
- Each clocked inverter stage comprises a pair of stacked PMOS transistors connected to a pair of stacked NMOS transistors.
- An inverter is interposed between each clocked inverter stage.
- One of the PMOS transistors of each clocked inverter stage is connected to a positive voltage supply node and one of the NMOS transistors is connected to a ground node.
- the gates of one PMOS transistor and one NMOS transistor of each clocked inverter stage are connected together to form an inverter.
- the gate of one PMOS transistor and one NMOS transistor of each clocked inverter stage are each connected to a different input clock, such that the positive and negative inputs to the PMOS and NMOS transistors alternate at each successive clocked inverter circuit in the ring.
- Still another embodiment relates to RF quadrature clock divider.
- the RF-divider includes positive and negative differential RF clock inputs, and first positive and negative differential RF clock outputs having half the frequency of the clock inputs.
- the RF-divider also includes second positive and negative differential RF clock outputs having half the frequency of the clock inputs and a 90-degree phase offset from the first RF clock outputs.
- the RF-divider further includes a plurality of transistors configured as inverters, and a plurality of transistors configured as clocking circuits, each clocking circuit associated with an inverter.
- Figure 1 is a schematic diagram of a prior art RF clock divider comprising two latches.
- Figures 2A and 2B are functional block diagrams of an RF clock divider dividing the output of a VCO.
- Figure 3 is a schematic diagram of a high speed divide-by-two RF clock divider according to one embodiment of the present invention.
- Figure 4 is a waveform diagram of the circuit of Figure 3.
- Figure 5 is a schematic diagram of a high speed divide-by-two RF clock divider comprising inverters, according to another embodiment of the present invention.
- Figure 6 is a schematic diagram of a high speed divide-by-two RF clock divider comprising an odd number of inverters, according to yet another embodiment of the present invention.
- Figure 7 is a waveform diagram of the circuits of Figures 5 and 6.
- Figure 2 depicts a typical application for RF clock dividers according to embodiments of the present invention, and demonstrates the need for a balanced, differential input with low capacitive loading, and balanced, differential, quadrature output.
- These circuits have particular utility in many communication system applications, where a high speed divider is needed to divide a VCO frequency to a lower frequency (e.g., in a PLL circuit).
- the high frequency oscillator signal is, for example, divided-by-two so that a more useable frequency is constructed that can be used for further synthesis.
- multiple clock outputs having a quadrature- phase relationship are advantageous in communication system applications.
- the input signal for the RF-divider is generated by a VCO.
- the positive input clock “Cp” and the negative input clock “Cn” are complimentary signals and the signal shape is essentially sinusoidal.
- Embodiments of the present invention feature a differential or balanced input, so that the RF-divider can be connected directly to the tank of the VCO.
- the connection between the oscillator and the divider can be done directly ( Figure 2A) or by using AC-coupling ( Figure 2B).
- AC-coupling extra design freedom exists for making independent bias levels between the divider and the common mode level of the oscillator signal.
- the output nodes AA, BB, CC & DD represent the divide-by-two signals with quadrature-phase relationship.
- the nodes AA & CC are complemented signals, as are the nodes BB & DD.
- FIG. 3 depicts a first embodiment of a high speed, balanced, quadrature, divide-by- two RF clock divider 10.
- the RF-divider 10 comprises two latches 12, 14, connected to the positive voltage supply node V DD and four NAND gates 16, 18, 20, 22 connected to ground (the NAND gates 16, 18, 20, 22 may also be considered to be clocking circuits).
- the outputs of the latches 12, 14 connect to the outputs of the NAND gates 16, 18, 20, 22 at four central nodes, labeled AA, BB, CC, and DD, which are the outputs of the RF-divider 10, as explained more fully herein.
- the input clock is a differential clock signal with positive signal Cp and negative signal Cn (i.e., Cn is 180 degrees out of phase with Cp).
- Cp and Cn are essentially sinusoidal, and may for example comprise the outputs of a VCO tank.
- a first differential output clock signal is taken at the nodes AA and CC.
- the first output clock has half the frequency of the input clock.
- a second differential output clock signal is taken at the nodes BB and DD.
- the second output clock also has half the frequency of the input clock, and is 90 degrees out of phase with the first clock output.
- Each latch 12, 14 is formed as a cross-coupled pair of PMOS transistors M1/M2 and M3/M4, respectively.
- the outputs AA and CC of the first latch always have opposite states.
- the outputs BB and DD of the second latch 14 always have opposite states.
- the latches 12, 14 force the states of the central nodes AA, BB, CC, and DD when the NAND gates 16, 18, 20, 22 connected thereto are inactive.
- Each NAND gate 16, 18, 20, 22 is formed as a stacked pair of NMOS transistors. That is, NAND gate 16 is formed by NMOS transistors M5 and M6; NAND gate 18 is formed by NMOS transistors M7 and M8; NAND gate 20 is formed by NMOS transistors M9 and M10; and NAND gate 22 is formed by NMOS transistors M11 and M12.
- a NAND gate 16, 18, 20, 22 is "active” if both constituent NMOS transistors are "on” or in a conducting state (that is, the inputs applied to the gates of both transistors are sufficiently high voltage to exceed a switching threshold and render the transistor conductive).
- An active NAND gate is operative to pull its output node to (or near) ground.
- a NAND gate 16, 18, 20, 22 is “inactive” if one or both constituent NMOS transistor are “off' or in a nonconducting state (that is, the input applied to the gate of at least one transistor is below its threshold level).
- An inactive NAND gate has no effect on the state of its output node.
- the NAND gates 16, 18, 20, 22 are connected in a serial ring formation, by the gate connection of one transistor in each NAND gate being the output of the preceding NAND gate in the ring, with the output DD of the last NAND gate 22 being connected to the gate of transistor M6 of the first NAND gate 16.
- the positive clock Cp is connected to the gate of one transistor of every other NAND gate in the ring - i.e., transistor M7 of NAND gate 18 and transistor M11 of NAND gate 22.
- the negative clock Cn is connected to the gate of one transistor of every alternate other NAND gate in the ring - i.e., transistor M5 of NAND gate 16 and transistor M9 of NAND gate 20.
- the latches 12, 14 maintain differential, or complementary values at the output nodes when the NAND gates 16, 18, 20, 22 are inactive. During each phase of the input clock C, only one NAND gates 16, 18, 20, 22 is active, and is operative to pull its output node low. This causes the corresponding Iatch12, 14 to reverse the states of its outputs. Due to the serial ring formation of the NAND gates 16, 18, 20, 22; the feedback inversion implemented by the coupling of inverter outputs to NAND gates; and the alternate phase clocking of successive NAND gate states in the ring, the resulting output pattern is half the frequency of the input clocks, with a quadrature phase difference.
- Table 1 State table for RF-divider of Figure 3
- outputs AA and BB are 0, and the corresponding complementary outputs CC and DD are 1.
- NAND gate 22 goes active, as the CC input to M12 is also 1.
- the effect of NAND gate 22 being active is to pull its output node DD to 0.
- the RF-divider 10 of Figure 3 implements an RF, differential, quadrature, divide-by-two clock divider.
- the RF-divider 10 achieves this with only four PMOS transistors and eight NMOS transistors.
- Input clock components Cp and Cn each have a fan-out of only two NMOS transistors; hence, the RF-divider 10 does not impose significant capacitive loading on the clock generator circuit (e.g., VCO).
- the input clock signals are differential, they may be connected directly to differential circuits in the VCO tank. Because of the minimal number of transistors and simple topology, the RF-divider 10 can operate at very high speeds, occupies a minimal silicon footprint, and consumes minimal power.
- Figure 5 depicts a second embodiment of a high speed, balanced, quadrature, divide-by-two RF clock divider 50.
- the RF-divider 50 comprises four stages of serially- connected clocked inverter circuits 52, 54, 56, 58, connected between the positive voltage supply node V DD and ground, in a ring formation.
- Inverters 53, 55, 57, 59 are interposed between the clocked inverter circuits 52, 54, 56, 58.
- the inverters 53, 55, 57, 59 increase the speed of the RF-divider 50 by limiting the loading of each clocked inverter circuit 52, 54, 56, 58, and providing drive strength to the successive clocked inverter circuit 52, 54, 56, 58 (as well as the outputs).
- the input of each clocked inverter stage is thus the compliment of the output of the prior stage in the ring.
- the input clock is a differential clock signal with positive signal Cp and negative signal Cn (i.e., Cn is 180 degrees out of phase with Cp).
- Cp and Cn are essentially sinusoidal, and may for example comprise the outputs of a VCO tank. Both input clock signals Cp and Cn are connected to each clocked inverter stage 52, 54, 56, 58, with the connections to PMOS and NMOS clock transistors switched over at each stage, as described more fully below.
- the output clock signals are taken in parallel at the outputs of the inverters 53, 55, 57, 59 following each clocked inverter stage 52, 54, 56, 58.
- a first differential output clock signal comprises the outputs AA and CC.
- the first output clock has half the frequency of the input clock.
- a second differential output clock signal comprises the outputs BB and DD.
- the second output clock also has half the frequency of the input clock, and is 90 degrees out of phase with the first clock output.
- Clocked inverter 52 comprises four stacked transistors - two PMOS transistors M1 and M2 and two NMOS transistors M3 and M4.
- the inner transistors M2 and M3 form an inverter, with their gates connected together and connected to a data input (the inverted output of the previous state).
- the outer transistors M1 and M4 form a clocking circuit; with negative input clock signal Cn connected to the gate of the PMOS transistor M1 , and positive input clock signal Cp connected to the gate of the NMOS transistor M4.
- the output of the clocked inverter stage 52 is the compliment of the signal applied to its input.
- transistors M1 and M4 are disabled, and the output of the clocked inverter stage 52 is at a high impedance (also known as tri-stated).
- the clocked inverter stage 52 together with the input capacitance of the next stage (or of the inverter inserted between stages 52 and 54 as a buffer) forms a sample & hold function, which retains the prior state at the output.
- This structure is also known in the art as clocked CMOS, or C 2 MOS.
- a 1 herein implies a voltage excursion in the positive direction sufficiently high to exceed a threshold value and operative to cause, e.g., an NMOS transistor to become conductive.
- a 0 herein implies a negative direction voltage excursion.
- Figure 7 depicts the input clock signals Cp and Cn, and the RF-divider 50 outputs AA, BB, CC and DD , taken in arallel at the outputs of inverters 57, 55, 53, and 59, respectively.
- Table 2 State table for RF-divider of Figure 5 [0040] At t 0 , outputs AA and BB are 0, and the corresponding complementary outputs CC and DD are 1.
- Stage 58 inverts the input
- Stage 56 inverts the input
- Stage 58 inverts the input
- Stage 56 inverts the input
- Output AA thus exhibits a 1 ⁇ 4 period (90 degrees) offset from the timing of output BB.
- the RF-divider 50 of Figure 5 implements an RF, differential, quadrature, divide-by-two clock divider.
- the RF-divider 50 achieves this with only eight PMOS transistors and eight NMOS transistors, in addition to the interstitial inverters 53, 55, 57, 59.
- Input clock components Cp and Cn each have a fan-out of only four transistors; hence, the RF- divider 50 does not impose significant capacitive loading on the clock generator circuit (e.g., VCO). Because the input clock signals are differential, they may be connected directly to differential circuits in the VCO tank. Because of the minimal number of transistors and simple topology, the RF-divider 50 can operate at very high speeds, occupies a minimal silicon footprint, and consumes minimal power.
- Figure 6 depicts a third embodiment of a high speed, balanced, quadrature, divide- by-two RF clock divider 60, comprising clocked inverter circuits 62, 64, 66, 68 with interstitial inverters 63, 65, 67, 69, configured and generally operative as described with respect to RF- divider 50.
- an additional inverter 70 is added, and the feedback for the ring is altered such that the ring includes an odd number of inverters. This guarantees proper startup.
- the signals BB and DD are always complimentary.
- DD BB
- the operation of the RF-divider 60 is logically the same as described for RF-divider 50 above.
- Embodiments of the present invention present numerous advantages over prior art RF clock dividers. They implement high speed, full swing CMOS divide-by-two dividers with balanced inputs and balanced quadrature outputs. VCO and clock loading are minimized with minimum transistors.
- the embodiments feature a fully balanced structure, and are robust against mismatch between p and n channels.
- the dividers feature good sensitivity for low swing VCO signals, low power, and good phase noise characteristics.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manipulation Of Pulses (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US38807610P | 2010-09-30 | 2010-09-30 | |
US13/248,143 US8487669B2 (en) | 2010-09-30 | 2011-09-29 | High speed RF divider |
PCT/EP2011/067188 WO2012042044A2 (en) | 2010-09-30 | 2011-09-30 | High speed rf divider |
Publications (2)
Publication Number | Publication Date |
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EP2621937A2 true EP2621937A2 (en) | 2013-08-07 |
EP2621937B1 EP2621937B1 (en) | 2014-08-20 |
Family
ID=45889274
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP11763742.1A Not-in-force EP2621937B1 (en) | 2010-09-30 | 2011-09-30 | High speed rf divider |
Country Status (5)
Country | Link |
---|---|
US (2) | US8487669B2 (en) |
EP (1) | EP2621937B1 (en) |
CN (1) | CN103180329A (en) |
TW (1) | TW201219409A (en) |
WO (2) | WO2012050761A2 (en) |
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WO2012050761A2 (en) * | 2010-09-30 | 2012-04-19 | Dow Corning Corporation | Process for preparing an acryloyloxysilane |
US8729931B1 (en) * | 2013-02-01 | 2014-05-20 | Qualcomm Incorporated | Divide-by-two divider circuit having branches with static current blocking circuits |
US9166571B2 (en) * | 2013-06-11 | 2015-10-20 | Futurewei Technologies, Inc. | Low power high speed quadrature generator |
US8928369B1 (en) * | 2013-07-31 | 2015-01-06 | Futurewei Technologies, Inc. | Low power local oscillator quadrature generator |
CN103955256B (en) * | 2014-04-24 | 2017-04-12 | 华为技术有限公司 | Clock frequency modulation method and clock frequency modulation device |
US9843329B2 (en) * | 2014-05-27 | 2017-12-12 | Nxp B.V. | Multi-modulus frequency divider |
CN105391444B (en) * | 2014-09-04 | 2018-07-20 | 中芯国际集成电路制造(上海)有限公司 | A kind of frequency dividing circuit and electronic device |
US9948309B2 (en) * | 2014-11-14 | 2018-04-17 | Texas Instruments Incorporated | Differential odd integer divider |
US10273254B2 (en) * | 2015-06-19 | 2019-04-30 | Dow Corning Corporation | Process for preparing an acryloyloxysilane |
CN106374919B (en) * | 2016-11-22 | 2020-02-18 | 成都仕芯半导体有限公司 | Frequency expanding device based on multi-path selector |
GB2564915B (en) | 2017-07-26 | 2021-03-03 | Cirrus Logic Int Semiconductor Ltd | Frequency-divider circuitry |
US10262704B1 (en) * | 2017-10-13 | 2019-04-16 | Micron Technology, Inc. | Apparatuses and methods for providing multiphase clock signals |
CN109067390A (en) * | 2018-07-19 | 2018-12-21 | 重庆湃芯入微科技有限公司 | A kind of ultrahigh speed clock division circuits based on transmission gate and phase inverter |
CN109905122A (en) * | 2019-01-23 | 2019-06-18 | 华东师范大学 | The CMOS complete or collected works that one kind working in 42 ~ 60GHz are orthogonal injection locking frequency divider |
EP3910793A4 (en) * | 2019-01-31 | 2022-02-09 | Huawei Technologies Co., Ltd. | Buffer circuit, frequency divider circuit, and communication device |
US10903841B1 (en) * | 2020-04-03 | 2021-01-26 | Ciena Corporation | Apparatus and methods for high frequency clock generation |
CN114499571A (en) * | 2022-01-06 | 2022-05-13 | 浙江科睿微电子技术有限公司 | Clock transmission circuit |
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2011
- 2011-09-20 WO PCT/US2011/052331 patent/WO2012050761A2/en active Application Filing
- 2011-09-21 TW TW100134000A patent/TW201219409A/en unknown
- 2011-09-29 US US13/248,143 patent/US8487669B2/en active Active
- 2011-09-30 WO PCT/EP2011/067188 patent/WO2012042044A2/en active Application Filing
- 2011-09-30 EP EP11763742.1A patent/EP2621937B1/en not_active Not-in-force
- 2011-09-30 CN CN2011800474695A patent/CN103180329A/en active Pending
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2013
- 2013-06-05 US US13/910,366 patent/US8797069B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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US20130293272A1 (en) | 2013-11-07 |
WO2012042044A3 (en) | 2012-09-20 |
WO2012042044A2 (en) | 2012-04-05 |
US20120081156A1 (en) | 2012-04-05 |
WO2012050761A3 (en) | 2012-08-09 |
US8797069B2 (en) | 2014-08-05 |
US8487669B2 (en) | 2013-07-16 |
TW201219409A (en) | 2012-05-16 |
WO2012050761A2 (en) | 2012-04-19 |
CN103180329A (en) | 2013-06-26 |
EP2621937B1 (en) | 2014-08-20 |
WO2012042044A8 (en) | 2013-05-02 |
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