EP2529601B1 - Miniaturizable plasma source - Google Patents
Miniaturizable plasma source Download PDFInfo
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- EP2529601B1 EP2529601B1 EP11704740.7A EP11704740A EP2529601B1 EP 2529601 B1 EP2529601 B1 EP 2529601B1 EP 11704740 A EP11704740 A EP 11704740A EP 2529601 B1 EP2529601 B1 EP 2529601B1
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- coil
- hollow body
- plasma source
- active element
- source according
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2240/00—Testing
- H05H2240/10—Testing at atmospheric pressure
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2245/00—Applications of plasma devices
- H05H2245/60—Portable devices
Description
Die Erfindung betrifft eine miniaturisierbare Plasmaquelle und deren Verwendung.The invention relates to a miniaturizable plasma source and its use.
Plasma, d.h. wenigstens teilweise ionisiertes Gas, kann in einer Vielzahl von technischen Anwendungen verwendet werden wie beispielsweise Oberflächenbeschichtung, Oberflächenaktivierung, Sterilisation, Ätzverfahren und dergleichen mehr. Übliche Plasmaquellen sind jedoch teuer, groß, arbeiten bei niedrigen Gasdrücken und weisen eine hohe Leistungsaufnahme auf. Es besteht daher Bedarf an einer kostengünstigen miniaturisierbaren Plasmaquelle, welche bei atmosphärischem Druck und niedriger Leistungsaufnahme arbeitet.Plasma, i. At least partially ionized gas may be used in a variety of engineering applications, such as surface coating, surface activation, sterilization, etching, and the like. However, conventional plasma sources are expensive, large, operate at low gas pressures, and have high power consumption. There is therefore a need for a low cost miniaturizable plasma source that operates at atmospheric pressure and low power consumption.
Die Erfindung führt daher eine Plasmaquelle mit einem Oszillator, welcher ein aktives Element und einen mit dem aktiven Element verbundenen Resonator besitzt, ein. Der Resonator weist einen Hohlkörper, einen Gaseinlass, einen an einem distalen Ende des Hohlkörpers um eine Längsachse des Hohlkörpers angeordneten Gasauslass und eine entlang der Längsachse des Hohlkörpers angeordnete Spule mit einer effektiven Länge von einem Viertel einer Wellenlänge bei einer Resonanzfrequenz des Resonators auf. Ein distales Ende der Spule ist relativ zum Gasauslass so angeordnet, dass sich eine Plasmastrecke zwischen dem als eine erste Plasmaelektrode fungierenden distalen Ende der Spule und dem als eine zweite Plasmaelektrode fungierenden Gasauslass des Hohlkörpers ausbilden kann. Erfindungsgemäß ist die Spule an einem proximalen Ende des Hohlkörpers aus dem Inneren des Hohlkörpers durch eine elektrisch kontaktfreie Durchführung herausgeführt, wobei "elektrisch kontaktfrei" bedeutet, dass im Bereich der Durchführung keine leitende Verbindung zwischen der Spule und dem Hohlkörper besteht. Ein proximales Ende der Spule kontaktiert den Hohlkörper an dessen Außenseite. Die Spule ist an einem zwischen dem proximalen Ende der Spule und der Durchführung gelegenen ersten Kontaktbereich mit einem ersten Tor des aktiven Elementes und an einem zwischen dem proximalen Ende der Spule und der Durchführung gelegenen zweiten Kontaktbereich mit einem zweiten Tor des aktiven Elementes gekoppelt. Der erste Kontaktbereich und der zweite Kontaktbereich sind dabei räumlich nicht identisch. Das erste Tor kann ein Ausgang des als Verstärker wirkenden aktiven Elementes und das zweite Tor ein Eingang des aktiven Elementes sein.The invention therefore introduces a plasma source having an oscillator having an active element and a resonator connected to the active element. The resonator has a hollow body, a gas inlet, a gas outlet arranged at a distal end of the hollow body about a longitudinal axis of the hollow body and a coil arranged along the longitudinal axis of the hollow body with an effective length of one quarter of a wavelength at a resonance frequency of the resonator. A distal end of the coil is disposed relative to the gas outlet so that a plasma path can form between the distal end of the coil acting as a first plasma electrode and the gas outlet of the hollow body functioning as a second plasma electrode. According to the invention, the coil is led out at a proximal end of the hollow body from the interior of the hollow body by an electrically contact-free passage, wherein "electrically contact-free" means that there is no conductive connection between the coil and the hollow body in the region of the implementation. A proximal end of the coil contacts the hollow body on the outside thereof. The coil is located at a first contact area located between the proximal end of the coil and the leadthrough with a first gate of the active element and at a second contact area located between the proximal end of the coil and the leadthrough coupled to the second gate of the active element. The first contact region and the second contact region are spatially not identical. The first port may be an output of the active element acting as an amplifier and the second port an input of the active element.
Die Plasmaquelle der Erfindung kann miniaturisiert und somit als tragbares Gerät ausgeführt werden. Indem das Plasma selbst im elektrischen Ersatzschaltbild Teil des Oszillators ist, wird ein sehr einfacher Aufbau der Plasmaquelle möglich. Das Plasma wirkt nach Zündung als Last und bestimmt die Resonanzeigenschaften des Resonators und des gesamten Schwingkreises mit. In Resonanz ohne gezündetes Plasma ist die Auskopplung aus dem Resonator über den zweiten Kontaktbereich zum zweiten Tor des aktiven Elementes hoch, so dass die Anordnung der Schaltungstopologie eines rückgekoppelten Verstärkers entspricht und zuverlässig anschwingt. Die Schwingung des rückgekoppelten Verstärkers erzeugt eine Feldstärke im Resonator, die für die Zündung des Plasmas benötigt wird. Dementsprechend wird das Plasma bei Erreichen einer von den jeweiligen Umständen wie Art des Gases etc. abhängigen Leistung gezündet.The plasma source of the invention can be miniaturized and thus embodied as a portable device. By the plasma itself is part of the oscillator in the electrical equivalent circuit, a very simple construction of the plasma source is possible. The plasma acts as a load after ignition and determines the resonance characteristics of the resonator and the entire resonant circuit. In resonance without ignited plasma, the coupling out of the resonator via the second contact region to the second gate of the active element is high, so that the arrangement corresponds to the circuit topology of a feedback amplifier and resonates reliably. The oscillation of the feedback amplifier generates a field strength in the resonator, which is needed for the ignition of the plasma. Accordingly, the plasma is ignited upon reaching a power dependent on the circumstances such as the type of gas, etc.
Die Plasmaquelle der Erfindung bietet den zusätzlichen Vorteil, dass ein einfacher mechanischer Aufbau des Resonators möglich wird. Indem die Spule elektrisch kontaktfrei aus dem Hohlkörper nach außen geführt wird, kann sie außerhalb des Hohlkörpers mit einfachen Mitteln wie z.B. Micro-Strip-Leitungen realisiert werden, welche kostengünstig herstellbar sind. Der Resonator braucht außer der Spule im Inneren des Hohlkörpers keine weiteren Elemente aufzuweisen.The plasma source of the invention offers the additional advantage that a simple mechanical construction of the resonator becomes possible. By the coil is out of contact electrically out of the hollow body to the outside, it can outside the hollow body by simple means such. Micro-strip lines are realized, which are inexpensive to produce. The resonator needs except the coil in the interior of the hollow body to have no further elements.
Der erste Kontaktbereich kann mit dem ersten Tor des aktiven Elementes über einen ersten Kondensator gekoppelt sein. Der erste Kondensator blockt nicht nur eine für die Arbeitspunkteinstellung des aktiven Elementes eventuell vorhandene Gleichspannung, sondern trägt auch zur Resonanz bei, was das Anschwingen des Oszillators vereinfacht. Es handelt sich daher bei dieser bevorzugten Ausführung um einen gekoppelten mehrkreisigen Schwingkreis.The first contact region may be coupled to the first gate of the active element via a first capacitor. The first capacitor not only blocks any DC voltage that may be present for the operating point setting of the active element, but also contributes to the resonance, which simplifies the oscillation of the oscillator. It is therefore in this preferred embodiment to a coupled multi-circuit resonant circuit.
Die Spule kann an dem zweiten Kontaktbereich mit dem zweiten Tor des aktiven Elementes induktiv gekoppelt sein. Diese Ausführungsvariante bietet den Vorteil, dass die Signalrückkopplung auf das zweite Tor des aktiven Elementes automatisch beendet wird, wenn das Plasma zündet, da dann die gesamte vom aktiven Element in den Resonator eingekoppelte Wirkleistung für die Anregung des Plasmas verwendet wird und der Strom in der Spule im zweiten Kontaktbereich Null oder wenigstens näherungsweise Null wird, so dass kein für die induktive Kopplung benötigtes Magnetfeld mehr erzeugt wird.The coil may be inductively coupled at the second contact region with the second gate of the active element. This embodiment variant has the advantage that the signal feedback to the second port of the active element is automatically terminated when the plasma ignites, since then the entire active power coupled into the resonator by the active element is used for the excitation of the plasma and the current in the coil becomes zero or at least approximately zero in the second contact region, so that no more required for the inductive coupling magnetic field is generated.
Dabei kann die Plasmaquelle eine Rückkopplungsleitung aufweisen, welche in dem zweiten Kontaktbereich entlang der Spule und zu dieser beabstandet angeordnet und ausgebildet ist, die Spule induktiv mit dem zweiten Tor des aktiven Elementes zu koppeln. Die Spule ist bevorzugt in dem außerhalb des Hohlkörpers gelegenen Teil nicht aufgewickelt, also als einfacher Leiter ausgeführt, so dass die Spule und die Rückkopplungsleitung einfach aneinander entlang geführt werden können.In this case, the plasma source may have a feedback line, which is arranged and formed in the second contact region along the coil and spaced therefrom Inductively couple the coil to the second gate of the active element. The coil is preferably not wound in the part located outside of the hollow body, that is to say it is designed as a simple conductor, so that the coil and the feedback line can easily be guided along one another.
Die Rückkopplungsleitung kontaktiert bevorzugt den Hohlkörper an dessen Außenseite.The feedback line preferably contacts the hollow body on the outside thereof.
Die Rückkopplungsleitung kann mit dem zweiten Tor des aktiven Elementes über einen zweiten Kondensator gekoppelt sein.The feedback line may be coupled to the second port of the active element via a second capacitor.
Besonders bevorzugt ist die Spule zwischen der Durchführung und dem proximalen Ende der Spule als Micro-Strip-Leitung ausgeführt. Auch die Rückkopplungsleitung kann als Micro-Strip-Leitung ausgeführt sein.Particularly preferably, the coil between the passage and the proximal end of the coil is designed as a micro-strip line. Also, the feedback line can be designed as a micro-strip line.
Bevorzugt sind das erste Tor des aktiven Elementes mit einem ersten Anpassungsnetzwerk und das zweite Tor des aktiven Elementes mit einem zweiten Anpassungsnetzwerk verbunden. Dadurch kann die Leistungsübertragung zwischen den einzelnen Komponenten der Anordnung optimiert werden.Preferably, the first port of the active element is connected to a first matching network and the second port of the active element is connected to a second matching network. As a result, the power transmission between the individual components of the arrangement can be optimized.
Das erste Anpassungsnetzwerk kann einen ersten veränderlichen Kondensator und das zweite Anpassungsnetzwerk einen zweiten veränderlichen Kondensator aufweisen. Diese Ausführungsvariante bietet den Vorteil, dass eine Justierung der Anpassung im Betrieb vorgenommen werden kann.The first matching network may include a first variable capacitor and the second matching network a second variable capacitor. This variant has the advantage that an adjustment of the adjustment during operation can be made.
Die Plasmaquelle kann eine mit dem ersten Tor des aktiven Elementes verbundene erste Gleichstromzuführung und eine mit dem zweiten Tor des aktiven Elementes verbundene zweite Gleichstromzuführung besitzen. Hierüber lässt sich der Arbeitspunkt des aktiven Elementes frei einstellen, wobei aufgrund des ersten und des zweiten Kondensators keine Einwirkung auf den Resonator besteht, dieser also seine Eigenschaften bei Änderung des Arbeitspunktes des aktiven Elementes nicht ändert.The plasma source may have a first DC supply connected to the first port of the active element and a second DC supply connected to the second port of the active element. By means of this, the working point of the active element can be adjusted freely, wherein due to the first and the second capacitor, there is no effect on the resonator, that is, it does not change its properties when the operating point of the active element changes.
Das aktive Element weist bevorzugt einen GaN-Transistor auf oder ist ein GaN-Transistor. GaN-Transistoren können die für den Betrieb einer Plasmaquelle benötigte Leistung auch bei hohen Schwingfrequenzen im Gigahertzbereich zur Verfügung stellen. Hierbei kann das zweite Tor des aktiven Elementes das Gate des GaN-Transistors sein.The active element preferably has a GaN transistor or is a GaN transistor. GaN transistors can provide the power required to operate a plasma source, even at high frequencies in the gigahertz range. Here, the second gate of the active element may be the gate of the GaN transistor.
Der GaN-Transistor ist bevorzugt in Source-Schaltung geschaltet. Dabei kann das erste Tor des aktiven Elementes die Drain des GaN-Transistors sein.The GaN transistor is preferably connected in source circuit. In this case, the first gate of the active element may be the drain of the GaN transistor.
Der Hohlkörper des Resonators kann zylinderförmig ausgebildet sein. Dadurch entsteht eine Hohlleiterstruktur um die vorzugsweise entlang der Achse des Resonators ausgeführte Spule, welche besonders gute Resonanzeigenschaften besitzt.The hollow body of the resonator may be cylindrical. This results in a waveguide structure around the coil, which is preferably designed along the axis of the resonator, which has particularly good resonance properties.
Die Plasmaquelle kann eine mit dem Gaseinlass verbundene Gaszuführung, welche ausgebildet ist, ein Plasmagas durch den Gaseinlass in den Hohlkörper des Resonators zu pumpen, aufweisen. Durch das Pumpen von Plasmagas in den Hohlkörper des Resonators wird bei gezündetem Plasma ein kontinuierlicher Strom von Plasma aus dem Gasauslass des Resonators bewirkt, welches für eine Vielzahl von Anwendungen verwendet werden kann. Wird die Plasmaquelle beispielsweise mit einem Stickstoff-Sauerstoff-Gemisch wie Luft betrieben, entstehen im Plasma Stickoxid und Ozon, wobei das Verhältnis zwischen Stickoxid und Ozon über das Verhältnis von Stickstoff und Sauerstoff beeinflusst werden kann. Dabei ist es auch möglich, nur entweder Ozon oder Stickoxid zu erzeugen. Ozon kann vorteilhaft für die Abtötung von Keimen verwendet werden, Stickoxid verbessert die Wundheilung.The plasma source may have a gas supply connected to the gas inlet, which is designed to pump a plasma gas through the gas inlet into the hollow body of the resonator. By pumping plasma gas into the hollow body of the resonator, in the case of ignited plasma, a continuous flow of plasma from the gas outlet of the resonator is effected, which can be used for a variety of applications. If the plasma source is operated, for example, with a nitrogen-oxygen mixture such as air, nitrogen oxide and ozone are formed in the plasma, whereby the ratio between nitrogen oxide and ozone can be influenced by the ratio of nitrogen to oxygen. It is also possible to produce only either ozone or nitric oxide. Ozone can be used to kill germs, and nitric oxide improves wound healing.
Der Oszillator der Erfindung fungiert bei gezündetem Plasma bevorzugt als Reflexions-Oszillator. Abhängig vom Zustand des Plasmas (gezündet / nicht gezündet), kann das aktive Element in unterschiedlichen Betriebsarten betrieben werden wie z.B. Klasse A-, AB-, B- oder C-Betrieb.The oscillator of the invention preferably functions as a reflection oscillator when the plasma is ignited. Depending on the state of the plasma (ignited / ignited), the active element may be operated in different modes, e.g. Class A, AB, B or C operation.
Ein zweiter Erfindungsaspekt betrifft die Verwendung einer Plasmaquelle nach dem ersten Erfindungsaspekt für die Aktivierung, Reinigung, Sterilisation und Beschichtung von Oberflächen, zum Ätzen und zur Reinigung von Wasser und Abgasen.A second aspect of the invention relates to the use of a plasma source according to the first aspect of the invention for the activation, cleaning, sterilization and coating of surfaces, for etching and for the purification of water and exhaust gases.
Eine VHF-Plasmaquelle zur Erzeugung von Gasentladungen für Oberflächenbearbeitung wird in Dokument
Die Erfindung wird im Folgenden anhand von Abbildungen von Ausführungsbeispielen näher beschrieben. Es zeigen:
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Fig. 1 ein Blockdiagramm einer erfindungsgemäßen Plasmaquelle; -
Fig. 2 in zwei Unterabbildungen unterschiedliche Betriebszustände der erfindungsgemäßen Plasmaquelle; -
Fig. 3 ein Schaltbild eine bevorzugten Ausführungsform der erfindungsgemäßen Plasmaquelle; und -
Fig. 4 einen vergrößerten Ausschnitt des Schaltbildes vonFig. 3 .
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Fig. 1 a block diagram of a plasma source according to the invention; -
Fig. 2 in two sub-pictures different operating states of the plasma source according to the invention; -
Fig. 3 a circuit diagram of a preferred embodiment of the plasma source according to the invention; and -
Fig. 4 an enlarged section of the circuit diagram ofFig. 3 ,
Claims (15)
- A plasma source comprising an oscillator which includes an active element (1) providing an electrical amplification and a resonator (2) connected to the active element (1), which resonator (2) has a hollow body (6) with a distal end and a proximal end, a gas inlet, a gas outlet arranged on the distal end of the hollow body (6) about a longitudinal axis of the hollow body (6), and a coil (7) arranged along the longitudinal axis of the hollow body (6), the effective length of said coil being a quarter of the wavelength at a resonance frequency of the resonator (2), wherein a distal end of the coil (7) is arranged in such a manner relative to the gas outlet that a plasma path can form between the distal end of the coil (7) acting as a first plasma electrode and the gas outlet of the hollow body (6) acting as a second plasma electrode, characterized in that the coil (7), at the proximal end of the hollow body (6), is run out of the interior of the hollow body (6) through an electrically contact-free passage (16) and a proximal end of the coil (7) contacts the hollow body (6) on the outside thereof, wherein the coil (7) is coupled to a first port of the active element (1) at a first contact region (18) located between the end of the coil (7) conductively connected to the hollow body and the passage and to a second port of the active element (1) at a second contact region (17) located between the end of the coil conductively connected to the hollow body and the passage.
- The plasma source according to claim 1, wherein the first contact region (18) is coupled to the first port of the active element (1) through a first capacitor (8).
- The plasma source according to either of claims 1 or 2, wherein the coil (7) is inductively coupled to the second port of the active element (1) at the second contact region (17).
- The plasma source according to claim 3, comprising a feedback line (19) which is arranged and formed in the second contact region (17), along and spaced apart from the coil (7), to inductively couple the coil (7) to the second port of the active element (1).
- The plasma source according to claim 4, wherein the feedback line (19) contacts the hollow body (6) on the outside thereof.
- The plasma source according to either of claims 4 or 5, wherein the feedback line (19) is coupled to the second port of the active element (1) through a second capacitor (9).
- The plasma source according to any one of the preceding claims, wherein the coil (7) is designed as a micro-strip line between the passage (16) and the proximal end of the coil (7).
- The plasma source according to any one of the preceding claims, wherein the first port of the active element (1) is connected to a first matching network (4) and the second port of the active element (1) is connected to a second matching network (5).
- The plasma source according to claim 8, wherein the first matching network (4) comprises a first variable capacitor (10) and the second matching network (5) comprises a second variable capacitor (11).
- The plasma source according to any one of the preceding claims, comprising a first direct current supply (14) connected to the first port of the active element (1) and a second direct current supply (15) connected to the second port of the active element (1).
- The plasma source according to any one of the preceding claims, wherein the active element (1) comprises a GaN transistor or is a GaN transistor.
- The plasma source according to claim 11, wherein the GaN transistor is a common-source transistor.
- The plasma source according to any one of the preceding claims, wherein the hollow body (6) of the resonator (2) is cylindrical.
- The plasma source according to any one of the preceding claims, comprising a gas supply connected to the gas inlet, which gas supply is designed to pump a plasma gas through the gas inlet into the hollow body (6) of the resonator (2).
- The use of a plasma source according to any one of the preceding claims for activating, cleaning, sterilizing and coating surfaces, for etching, and for cleaning water and exhaust gases.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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PL11704740T PL2529601T3 (en) | 2010-01-29 | 2011-01-28 | Miniaturizable plasma source |
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DE102010001395A DE102010001395B4 (en) | 2010-01-29 | 2010-01-29 | Miniaturizable plasma source |
PCT/EP2011/051234 WO2011092298A1 (en) | 2010-01-29 | 2011-01-28 | Miniaturizable plasma source |
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EP2529601A1 EP2529601A1 (en) | 2012-12-05 |
EP2529601B1 true EP2529601B1 (en) | 2015-03-11 |
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US (1) | US8796934B2 (en) |
EP (1) | EP2529601B1 (en) |
DE (1) | DE102010001395B4 (en) |
PL (1) | PL2529601T3 (en) |
WO (1) | WO2011092298A1 (en) |
Cited By (1)
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DE102020100872A1 (en) | 2020-01-15 | 2021-07-15 | Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik | Resonator and power oscillator for the construction of an integrated plasma source and their use |
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DE102010001395B4 (en) | 2010-01-29 | 2013-11-14 | Forschungsverbund Berlin E.V. | Miniaturizable plasma source |
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DE102010001395B4 (en) | 2010-01-29 | 2013-11-14 | Forschungsverbund Berlin E.V. | Miniaturizable plasma source |
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2010
- 2010-01-29 DE DE102010001395A patent/DE102010001395B4/en not_active Expired - Fee Related
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2011
- 2011-01-28 WO PCT/EP2011/051234 patent/WO2011092298A1/en active Application Filing
- 2011-01-28 PL PL11704740T patent/PL2529601T3/en unknown
- 2011-01-28 US US13/575,981 patent/US8796934B2/en not_active Expired - Fee Related
- 2011-01-28 EP EP11704740.7A patent/EP2529601B1/en not_active Not-in-force
Cited By (3)
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DE102020100872A1 (en) | 2020-01-15 | 2021-07-15 | Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik | Resonator and power oscillator for the construction of an integrated plasma source and their use |
WO2021144432A1 (en) | 2020-01-15 | 2021-07-22 | Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik | Resonator and power oscillator for constructing an integrated plasma source and use thereof |
DE102020100872B4 (en) | 2020-01-15 | 2021-08-05 | Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik | Resonator and power oscillator for the construction of an integrated plasma source and their use |
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DE102010001395A1 (en) | 2011-08-04 |
WO2011092298A1 (en) | 2011-08-04 |
EP2529601A1 (en) | 2012-12-05 |
US8796934B2 (en) | 2014-08-05 |
US20120313524A1 (en) | 2012-12-13 |
PL2529601T3 (en) | 2015-08-31 |
DE102010001395B4 (en) | 2013-11-14 |
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