EP2528100A4 - Carte de circuits, dispositif d'affichage et procédé de fabrication de la carte de circuits - Google Patents
Carte de circuits, dispositif d'affichage et procédé de fabrication de la carte de circuitsInfo
- Publication number
- EP2528100A4 EP2528100A4 EP10843931.6A EP10843931A EP2528100A4 EP 2528100 A4 EP2528100 A4 EP 2528100A4 EP 10843931 A EP10843931 A EP 10843931A EP 2528100 A4 EP2528100 A4 EP 2528100A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- circuit board
- production
- display device
- board
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010011368 | 2010-01-21 | ||
PCT/JP2010/068803 WO2011089767A1 (fr) | 2010-01-21 | 2010-10-25 | Carte de circuits, dispositif d'affichage et procédé de fabrication de la carte de circuits |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2528100A1 EP2528100A1 (fr) | 2012-11-28 |
EP2528100A4 true EP2528100A4 (fr) | 2014-03-12 |
EP2528100B1 EP2528100B1 (fr) | 2016-07-20 |
Family
ID=44306583
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP10843931.6A Not-in-force EP2528100B1 (fr) | 2010-01-21 | 2010-10-25 | Procédé de fabrication d'une carte de circuits |
Country Status (5)
Country | Link |
---|---|
US (1) | US8778730B2 (fr) |
EP (1) | EP2528100B1 (fr) |
JP (1) | JP5559210B2 (fr) |
CN (1) | CN102714221A (fr) |
WO (1) | WO2011089767A1 (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120099475A (ko) | 2009-12-04 | 2012-09-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
US8664097B2 (en) * | 2010-09-13 | 2014-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
JP6076038B2 (ja) * | 2011-11-11 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
US9905585B2 (en) | 2012-12-25 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising capacitor |
KR102459007B1 (ko) | 2012-12-25 | 2022-10-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102241249B1 (ko) | 2012-12-25 | 2021-04-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 저항 소자, 표시 장치, 및 전자기기 |
US9915848B2 (en) | 2013-04-19 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
US9704894B2 (en) | 2013-05-10 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device including pixel electrode including oxide |
TWI649606B (zh) | 2013-06-05 | 2019-02-01 | 日商半導體能源研究所股份有限公司 | 顯示裝置及電子裝置 |
US9959826B2 (en) | 2013-06-27 | 2018-05-01 | Sharp Kabushiki Kaisha | Liquid crystal display device |
US9293480B2 (en) | 2013-07-10 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
WO2016063169A1 (fr) | 2014-10-23 | 2016-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Élément luminescent |
US10680017B2 (en) | 2014-11-07 | 2020-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element including EL layer, electrode which has high reflectance and a high work function, display device, electronic device, and lighting device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070241327A1 (en) * | 2006-04-18 | 2007-10-18 | Samsung Electronics Co. Ltd. | Fabrication methods of a ZnO thin film structure and a ZnO thin film transistor, and a ZnO thin film structure and a ZnO thin film transistor |
US20090239335A1 (en) * | 2005-09-29 | 2009-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device and Manufacturing Method Thereof |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3365954B2 (ja) * | 1997-04-14 | 2003-01-14 | 株式会社神戸製鋼所 | 半導体電極用Al−Ni−Y 合金薄膜および半導体電極用Al−Ni−Y 合金薄膜形成用スパッタリングターゲット |
JP5064747B2 (ja) * | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
JP5305630B2 (ja) * | 2006-12-05 | 2013-10-02 | キヤノン株式会社 | ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法 |
JP2008277326A (ja) | 2007-04-25 | 2008-11-13 | Canon Inc | アモルファス酸化物半導体、半導体デバイス及び薄膜トランジスタ |
US8300167B2 (en) * | 2007-06-14 | 2012-10-30 | Sharp Kabushiki Kaisha | Display panel, display device, and method for manufacturing display panel |
US20110227087A1 (en) * | 2008-11-28 | 2011-09-22 | Sharp Kabushiki Kaisha | Substrate for display device, and display device |
-
2010
- 2010-10-25 US US13/522,778 patent/US8778730B2/en active Active
- 2010-10-25 EP EP10843931.6A patent/EP2528100B1/fr not_active Not-in-force
- 2010-10-25 CN CN2010800618610A patent/CN102714221A/zh active Pending
- 2010-10-25 WO PCT/JP2010/068803 patent/WO2011089767A1/fr active Application Filing
- 2010-10-25 JP JP2011550792A patent/JP5559210B2/ja not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090239335A1 (en) * | 2005-09-29 | 2009-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device and Manufacturing Method Thereof |
US20070241327A1 (en) * | 2006-04-18 | 2007-10-18 | Samsung Electronics Co. Ltd. | Fabrication methods of a ZnO thin film structure and a ZnO thin film transistor, and a ZnO thin film structure and a ZnO thin film transistor |
Also Published As
Publication number | Publication date |
---|---|
US20120298988A1 (en) | 2012-11-29 |
JPWO2011089767A1 (ja) | 2013-05-20 |
JP5559210B2 (ja) | 2014-07-23 |
EP2528100A1 (fr) | 2012-11-28 |
EP2528100B1 (fr) | 2016-07-20 |
WO2011089767A1 (fr) | 2011-07-28 |
US8778730B2 (en) | 2014-07-15 |
CN102714221A (zh) | 2012-10-03 |
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