EP2496999A1 - Response to wearout in an electronic device - Google Patents
Response to wearout in an electronic deviceInfo
- Publication number
- EP2496999A1 EP2496999A1 EP09851059A EP09851059A EP2496999A1 EP 2496999 A1 EP2496999 A1 EP 2496999A1 EP 09851059 A EP09851059 A EP 09851059A EP 09851059 A EP09851059 A EP 09851059A EP 2496999 A1 EP2496999 A1 EP 2496999A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- electronic device
- component
- set forth
- state
- wearout
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004044 response Effects 0.000 title description 5
- 230000000694 effects Effects 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 11
- 230000001276 controlling effect Effects 0.000 claims abstract description 8
- 238000012937 correction Methods 0.000 claims abstract description 7
- 230000002596 correlated effect Effects 0.000 claims abstract description 3
- 230000006870 function Effects 0.000 claims description 13
- 230000036962 time dependent Effects 0.000 claims description 4
- 239000000969 carrier Substances 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 230000001960 triggered effect Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 description 12
- 238000013459 approach Methods 0.000 description 9
- 230000006399 behavior Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000002457 bidirectional effect Effects 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
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- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
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- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/004—Error avoidance
Definitions
- This invention relates to an electronic device comprising a first component susceptible to a wearout effect, operation of which first component depends on an operating parameter; and a second component having an on-state and an off-state.
- the invention also relates to a method of operating such an electronic device.
- a wearout effect in this context is understood to be any long-term variation of the properties of the electronic device that is produced by operating the device.
- wearout phenomena include negative bias temperature instability (NBTI), time-dependent dielectric breakdown (TDDB), hot carriers injection (HCI), and electromigration (EM).
- NBTI negative bias temperature instability
- TDDB time-dependent dielectric breakdown
- HCI hot carriers injection
- EM electromigration
- wearout effects may manifest themselves by an increase of latency in integrated circuits during the lifetime of the integrated circuit.
- US 2008/0036487 A1 therefore proposes detecting signal generation latency and generating a wearout response.
- the wearout response can take a variety of different forms such as reducing the operating frequency, increasing the operating voltage, and others.
- the present invention provides an electronic device and a method as described in the accompanying claims.
- Figure 1 shows a schematic plot of a threshold voltage and an operating voltage as functions of time.
- Figure 2 shows a schematic plot of the threshold voltage and an adapted operating voltage as functions of time.
- Figure 3 shows a schematic outline of an electronic device according to a first embodiment.
- Figure 4 shows a schematic outline of an electronic device according to a second embodiment.
- Figure 5 is a schematic flow chart of a method of adapting an operating voltage.
- Figure 6 shows a schematic plot of experimental data illustrating a reduction in power consumption.
- a threshold voltage V th of a semiconductor device e.g. a transistor
- the accumulated time t is understood to be the total time during which the device was in an on-state since e.g. fabrication or first use of the device.
- the threshold voltage V th is the minimum voltage required for operating the device.
- the threshold voltage V th increases monotonically as a function of the accumulated time t. This behaviour is a typical wearout effect of negative bias temperature instability (NBTI). Other wearout phenomena may result in similar or in different variations of the threshold voltage.
- NBTI negative bias temperature instability
- a constant voltage V 1 i ⁇ n st may be applied at the device.
- the constant voltage V 1 iCon st is chosen greater than a constant minimum voltage V min .
- the minimum voltage V min is given by the threshold voltage V th at accumulated time t max .
- the wearout behaviour of the threshold voltage V th i.e. the function V th (t) may be known or can be determined, e.g. experimentally.
- V th a method of determining NBTI of a p-channel metal-oxide-semiconductor (PMOS) transistor is described in US 2003/0231028 A1.
- the operating voltage can be adapted to the wearout behaviour of the threshold voltage V th .
- the operating voltage V-i thus increases monotonically as prescribed by the threshold voltage V th .
- the time-dependent operating voltage V-i is lower than the constant operating voltage V 1 i Con st described above with reference to Figure 1. A reduction in power consumption during the lifetime of the device can thus be achieved.
- the electronic device 10 may, for example, be one of the following: an integrated circuit, a microprocessor, a computer processor, a telephone, a navigation device (10), an audio device (10), a video device (10), and any combination thereof.
- the device 10 comprises a first component 12, a second component 14, a time estimator 16, a controller 18, a DC voltage provider 20, and a DC-DC converter 22.
- the first component 12 is an integrated circuit
- the second component 14 is a central processing unit (CPU).
- the CPU may also be an integrated circuit.
- the second component 14 comprises the time estimator 16 and the controller 18.
- the time estimator 16 and the controller 18 are not necessarily distinct components of the CPU 14, indeed they may represent functionalities of the CPU 14. They may be implemented by dedicated circuitry and/or by software stored in a memory (not shown) of the CPU 14.
- the DC power provider 20 may be a battery. It provides a constant supply voltage V 0 for powering both the CPU 14 and the DC-DC voltage converter 22.
- the DC-DC voltage converter 22 generates an operating voltage V-i for powering the integrated circuit 12. Operation of the first component 12 thus depends on an operating parameter, namely, the operating voltage V-
- the first component 12 is susceptible to a wearout effect.
- the wearout effect may be due to at least one of the following phenomena: negative bias temperature instability (NBTI), time- dependent dielectric breakdown (TDDB), hot carriers injection (HCI), and electromigration (EM). Because of the expected wearout effect, adapting the operating parameter V-i during the lifetime of the device 10 may be advantageous.
- NBTI negative bias temperature instability
- TDDB time- dependent dielectric breakdown
- HCI hot carriers injection
- EM electromigration
- An off-state is a state in which the device in question is "off” in the sense of "switched off or “inactive” or “not powered".
- the electronic device 10 comprises a time estimator 16 for updating an estimate of an accumulated time the second component 14 was in the on-state. Restated in a simplified manner, the time estimator counts the total time during which the second device is in the on-state.
- the electronic device 10 further comprises a controller 18 for controlling the operating parameter (in the example, the voltage V-i) on the basis of the accumulated time estimate so as to respond to the expected wearout effect. It is pointed out that the wearout effect itself is not necessarily detected or determined.
- the first component 12 may have an on-state correlated to the on-state of the second component 14. More particularly, the electronic device 10 may be such that when the second component 14 is in its on-state, the first component 12 has a probability greater than 50% of being in its on-state. In this case the estimate of the accumulated time the second component 14 was in the on-state may be a particularly reliable estimate of an accumulated time the first component 12 was in the on-state.
- the controller 18 is configured for increasing the voltage V-i as a function of the accumulated time estimate.
- the operating parameter may be a voltage correction applied at the first component 12, and the controller 18 may be configured for increasing the voltage correction as a function of the accumulated time estimate. More generally, the operating parameter may be a level or amplitude or correction value of one of the following: a voltage applied at the first component 12, an electric current fed to the first component 12, and a power provided to the first component 12.
- the electronic device 10 comprises a clock generator (not shown) for generating a clock signal.
- the time estimator 16 comprises a counter (not shown) which is triggered by the clock signal.
- the counter has a range of at least t_max/T_clk, where the time t_max is one of the following: one week, one month, three months, one year, three years, ten years, thirty years, and a hundred years.
- the counter may thus be configured for counting during the entire lifetime without wrapping around to zero.
- the electronic device 10 may be configured such that the accumulated time estimate is conserved while the electronic device is not powered.
- the time estimator 16 may comprise a non volatile memory for memorizing the accumulated time estimate.
- the non-volatile memory may be, for example, a flash memory or an EEPROM.
- the counter may, for example, be provided by a dedicated counter, e.g. a Secure Real Time Counter (SRTC), in an always-on power domain, or by a dedicated counter coupled to a chip or external memory (e.g. flash memory) for memorizing the count, or by a software counter coupled to a chip or external memory (e.g. flash memory) for memorizing the count.
- SRTC Secure Real Time Counter
- the electronic device 10 does not comprise any means for resetting the accumulated time estimate.
- the electronic device 10 may comprise verification means for verifying whether the accumulated time estimate provided by the time estimator 16 is to be trusted. This can be relevant in view of possible attempts by hackers of resetting a system clock, e.g. a Secure Real Time Counter (SRTC). Such attempts may aim at violating Digital Rights Management (DRM). If the time estimator 16 depends on the SRTC, the accumulated time estimate might be reset by resetting the SRTC.
- the verification means may comprise a fuse (not shown) that is likely to be blown when a voltage is applied to the time estimator 16. Software can check the state of the fuse (blown or not blown) before working with the accumulated time estimate.
- the controller 18 comprises a non-volatile memory (not shown) containing data for enabling the controller 18 to determine a nominal value of the operating parameter on the basis of the accumulated time estimate.
- the data may be provided in the form of, for example, a digital look-up table or a software definition of a mathematical function, e.g. a polynomial or exponential.
- the controller 18 then controls the DC-DC voltage converter 22 to output an operating voltage V-i substantially equal to the nominal value determined by the controller 18.
- the controller 18 checks the accumulated time estimate at regular intervals. Depending on the clock period T_clk, those intervals may be considerably larger than the clock period T_clk.
- the electronic device 10 further comprises a temperature recorder (not shown) for recording values of a temperature of the electronic device 10.
- Controller 18 is configured for controlling the operating parameter on the basis of both the accumulated time estimate and the recorded temperature values so as to respond to the expected wearout.
- the operating voltage V-i (or more generally, the operating parameter) can thus be controlled on the basis of a "history" of the temperature.
- the temperature recorder may comprise a sensor in thermal contact with the first component 12. More generally, it is noted that a physical quantity may have an influence on the wearout effect.
- the electronic device 10 may therefore comprise a recorder for chronologically recording values of the physical quantity, and the controller 18 may be configured for controlling the operating parameter on the basis of both the accumulated time estimate and the recorded values of the physical quantity so as to respond to the expected wearout effect.
- the physical quantity may, for example, be a voltage, a frequency, or a temperature.
- an electronic device 10 in accordance with a second embodiment. It differs substantially from the electronic device 10 discussed above with reference to Figure 3 only in that the first component 12 and the second component 14 are the same. In the example, it is thus the CPU 14 which is susceptible to a wearout effect, and the time estimator 16 provides an estimate of the accumulated time the CPU 12 is in an on-state. Based on the accumulated time estimate, the controller 18 determines a corresponding nominal voltage V-i(t) which is applied to the CPU 12 by the DC-DC converter 22. In both the first and the second embodiments, the dependence of the nominal voltage V-i on the accumulated time t may be predefined as a function of the expected wearout effect.
- Figure 6 presents data taken from LMX51 measurements on a system on a chip.
- the total power consumed by the device is the sum of a dynamic power and a leakage power.
- Graphs 602, 606, and 610 in the plot refer respectively to the total power, the leakage power, and the dynamic power measured in an approach in which the operating voltage (supply voltage) was kept fixed at a high level corresponding to the required minimum voltage near the end of the lifetime of the device ("non-compensated approach").
- Graphs 604, 608, and 612 analogously indicate, respectively, the total power, the leakage power, and the dynamic power in an approach in which the supply voltage was adapted as a function of an estimated accumulated time as described above with reference to Figures 2 to 5 (“compensated approach").
- the power follows from a fifty millivolt supply voltage elevation (1.05 volt to 1 volt) required to meet reliability considerations.
- the dynamic power was obtained from Dhrystone benchmark measurements in a range of 1.05 volt to 1 volt in the compensated approach and at 1 volt in the non-compensated approach.
- the leakage power was determined at a fast process corner (ff corner) of a 125 degrees Celsius junction (automotive) with an assumed 15 % leakage current due to aging or wearout processes.
- ff corner fast process corner
- automotive automotive
- connections may be a type of connection suitable to transfer signals from or to the respective nodes, units or devices, for example via intermediate devices. Accordingly, unless implied or stated otherwise the connections may for example be direct connections or indirect connections.
- the operating parameter in the embodiments described above is a voltage
- the invention is readily applicable to other types of operating parameters, such as electric current, power, electric capacity, and inductivity.
- the conductors as discussed herein may be illustrated or described in reference to being a single conductor, a plurality of conductors, unidirectional conductors, or bidirectional conductors. However, different embodiments may vary the implementation of the conductors. For example, separate unidirectional conductors may be used rather than bidirectional conductors and vice versa. Also, plurality of conductors may be replaced with a single conductor that transfers multiple signals serially or in a time multiplexed manner. Likewise, single conductors carrying multiple signals may be separated out into various different conductors carrying subsets of these signals. Therefore, many options exist for transferring signals.
- any two components herein combined to achieve a particular functionality can be seen as “associated with” each other such that the desired functionality is achieved, irrespective of architectures or intermedial components.
- any two components so associated can also be viewed as being “operably connected,” or “operably coupled,” to each other to achieve the desired functionality.
- system 10 are circuitry located on a single integrated circuit or within a same device.
- system 10 may include any number of separate integrated circuits or separate devices interconnected with each other.
- controller 18 may be located on a same integrated circuit as components 12 and 14 or on a separate integrated circuit or located within another peripheral or slave discretely separate from other elements of system 10.
- Voltage provider 20 and DC-DC voltage converter 22 may also be located on separate integrated circuits or devices.
- system 10 or portions thereof may be soft or code representations of physical circuitry or of logical representations convertible into physical circuitry.
- system 10 may be embodied in a hardware description language of any appropriate type.
- the invention is not limited to physical devices or units implemented in nonprogrammable hardware but can also be applied in programmable devices or units able to perform the desired device functions by operating in accordance with suitable program code.
- the devices may be physically distributed over a number of apparatuses, while functionally operating as a single device.
- devices functionally forming separate devices may be integrated in a single physical device.
- any reference signs placed between parentheses shall not be construed as limiting the claim.
- the word 'comprising' does not exclude the presence of other elements or steps then those listed in a claim.
- the terms "a” or "an,” as used herein, are defined as one or more than one.
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Environmental & Geological Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Quality & Reliability (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/IB2009/054942 WO2011055169A1 (en) | 2009-11-06 | 2009-11-06 | Response to wearout in an electronic device |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2496999A1 true EP2496999A1 (en) | 2012-09-12 |
EP2496999A4 EP2496999A4 (en) | 2013-04-24 |
EP2496999B1 EP2496999B1 (en) | 2014-06-04 |
Family
ID=43969609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP09851059.7A Active EP2496999B1 (en) | 2009-11-06 | 2009-11-06 | Response to wearout in an electronic device |
Country Status (4)
Country | Link |
---|---|
US (1) | US8698552B2 (en) |
EP (1) | EP2496999B1 (en) |
CN (1) | CN102597906B (en) |
WO (1) | WO2011055169A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103197717B (en) * | 2013-02-28 | 2015-11-25 | 华为技术有限公司 | Adaptive voltage method of adjustment, chip and system |
US9378803B2 (en) * | 2013-03-15 | 2016-06-28 | Qualcomm Incorporated | System and method to regulate operating voltage of a memory array |
DE102015116094A1 (en) | 2015-09-23 | 2017-03-23 | Intel IP Corporation | An apparatus and method for predicting a future state of an electronic component |
CN108074368B (en) * | 2016-11-11 | 2021-05-07 | 基德科技公司 | Fiber-based monitoring of temperature and/or smoke conditions at electronic components |
EP3444691B1 (en) * | 2017-06-27 | 2021-09-15 | Schneider Electric Systems USA, Inc. | Sensor service prediction |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090190413A1 (en) * | 2008-01-24 | 2009-07-30 | Hsu Louis L C | Self-repair integrated circuit and repair method |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6476632B1 (en) | 2000-06-22 | 2002-11-05 | International Business Machines Corporation | Ring oscillator design for MOSFET device reliability investigations and its use for in-line monitoring |
US6775624B2 (en) * | 2001-10-19 | 2004-08-10 | International Business Machines Corporation | Method and apparatus for estimating remaining life of a product |
US6653856B1 (en) | 2002-06-12 | 2003-11-25 | United Microelectronics Corp. | Method of determining reliability of semiconductor products |
US7577859B2 (en) * | 2004-02-20 | 2009-08-18 | International Business Machines Corporation | System and method of controlling power consumption in an electronic system by applying a uniquely determined minimum operating voltage to an integrated circuit rather than a predetermined nominal voltage selected for a family of integrated circuits |
US20060049886A1 (en) * | 2004-09-08 | 2006-03-09 | Agostinelli Victor M Jr | On-die record-of-age circuit |
US7592876B2 (en) * | 2005-12-08 | 2009-09-22 | Intel Corporation | Leakage oscillator based aging monitor |
GB2440764B (en) * | 2006-08-09 | 2011-03-02 | Advanced Risc Mach Ltd | Integrated circuit wearout detection |
US20080036487A1 (en) * | 2006-08-09 | 2008-02-14 | Arm Limited | Integrated circuit wearout detection |
US7689377B2 (en) * | 2006-11-22 | 2010-03-30 | Texas Instruments Incorporated | Technique for aging induced performance drift compensation in an integrated circuit |
JP4575346B2 (en) * | 2006-11-30 | 2010-11-04 | 株式会社東芝 | Memory system |
FR2912257B1 (en) * | 2007-02-02 | 2009-03-06 | Commissariat Energie Atomique | METHOD AND CIRCUIT FOR IMPROVING THE LIFETIME OF FIELD EFFECT TRANSISTORS |
US7581201B2 (en) | 2007-02-28 | 2009-08-25 | International Business Machines Corporation | System and method for sign-off timing closure of a VLSI chip |
US20090160515A1 (en) | 2007-12-19 | 2009-06-25 | James Douglas Warnock | Auto-tracking clock circuitry |
US8248095B2 (en) * | 2009-10-30 | 2012-08-21 | Apple Inc. | Compensating for aging in integrated circuits |
-
2009
- 2009-11-06 US US13/500,700 patent/US8698552B2/en active Active
- 2009-11-06 WO PCT/IB2009/054942 patent/WO2011055169A1/en active Application Filing
- 2009-11-06 EP EP09851059.7A patent/EP2496999B1/en active Active
- 2009-11-06 CN CN200980162323.8A patent/CN102597906B/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090190413A1 (en) * | 2008-01-24 | 2009-07-30 | Hsu Louis L C | Self-repair integrated circuit and repair method |
Non-Patent Citations (2)
Title |
---|
See also references of WO2011055169A1 * |
TAE-HYOUNG KIM ET AL: "Silicon Odometer: An On-Chip Reliability Monitor for Measuring Frequency Degradation of Digital Circuits", IEEE JOURNAL OF SOLID-STATE CIRCUITS, IEEE SERVICE CENTER, PISCATAWAY, NJ, USA, vol. 43, no. 4, 1 April 2008 (2008-04-01), pages 874-880, XP011206688, ISSN: 0018-9200 * |
Also Published As
Publication number | Publication date |
---|---|
EP2496999A4 (en) | 2013-04-24 |
WO2011055169A1 (en) | 2011-05-12 |
CN102597906B (en) | 2016-02-03 |
US20120206183A1 (en) | 2012-08-16 |
US8698552B2 (en) | 2014-04-15 |
CN102597906A (en) | 2012-07-18 |
EP2496999B1 (en) | 2014-06-04 |
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