EP2478559A2 - Interconnexion série de photopiles en minces couches - Google Patents

Interconnexion série de photopiles en minces couches

Info

Publication number
EP2478559A2
EP2478559A2 EP10760919.0A EP10760919A EP2478559A2 EP 2478559 A2 EP2478559 A2 EP 2478559A2 EP 10760919 A EP10760919 A EP 10760919A EP 2478559 A2 EP2478559 A2 EP 2478559A2
Authority
EP
European Patent Office
Prior art keywords
trench
layer
thin
solar cells
trenches
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10760919.0A
Other languages
German (de)
English (en)
Inventor
Karsten Otte
Alexander Braun
Steffen Ragnow
Andreas Rahm
Christian Scheit
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC3 AG
Original Assignee
Solarion AG Photovotaik
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solarion AG Photovotaik filed Critical Solarion AG Photovotaik
Publication of EP2478559A2 publication Critical patent/EP2478559A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to an interconnection of thin-film solar cells for the production of solar modules.
  • FIG. 1 The basic structure of a thin-film solar cell is shown in Figure 1 using a film-based CIGS thin-film solar cell and comprises the carrier or the substrate which consists for example of a film (1), the metallic back contact layer (2), which in the example is essentially a molybdenum layer comprises the absorber layer of, for example, CIGS (3), a buffer layer of, for example, cadmium sulfide (4), a tunnel contact of, for example, intrinsic zinc oxide, and the transparent front-side electrode formed of a transparent oxide conductor, such as indium-tin-oxide (ITO). or aluminum-doped zinc oxide.
  • ITO indium-tin-oxide
  • Front side electrode also referred to as transparent front contact layer
  • Front side electrode are shown together as one layer (5).
  • Advantageous for the production of thin film solar cells is the continuous process control in the
  • WO 2008/157807 A2 proposed to carry out all structuring steps after producing the complete layer package and to fill them with electrically conductive polymer paste or electrically insulating polymer paste (Figure 2).
  • Figure 3 shows the process flow based on the prior art.
  • the starting point is the layer package of substrate (1) shown in FIG. 3 (a),
  • Figure 3 (b) shown, structured and divided into individual segments.
  • the number of individual segments can initially be chosen arbitrarily. ever
  • Structuring steps are explained below with reference to Figure 3 (b). Structuring A completely separates the transparent front contact layer (5) so that the buffer layers (4) or the absorber layer (3) become visible.
  • Structuring B separates all layers above the back contact layer (2) and thus exposes it.
  • the complete layer package including the back contact layer is separated above the substrate.
  • a connection must be achieved from the back contact layer of one segment to the front contact layer of a following segment.
  • Layers are found or an additional technology can be used. Since in the structuring A, B and C different layer sequences
  • a parameter set can include, for example, the placement force of the needle, the travel speed of the needle, the radius of the needle tip and the number of passes of the needle.
  • Wavelengths usually have a high transmission. The majority of the laser irradiated energy is then in the buffer layers and in the
  • lasers with a shorter wavelength could be selected.
  • the common transparent front contact layers at a wavelength of 266 nm show a high absorption capacity, whereby the radiation emitted by this laser can be well deposited in the transparent front contact layer.
  • These short wavelengths of these lasers are generated by frequency conversion from lasers with longer wavelengths, which requires cost-intensive optical devices with sometimes limited lifetimes.
  • such a "frequency conversion" always with a reduction of the laser intensities and thus a reduction in the
  • the structuring step A separates the front contact layers of two adjacent segments.
  • the buffer and absorber layers are not separated.
  • the absorber layers are usually around
  • transparent front contact layer is sufficient.
  • an electrical connection between the transparent front contact layers of two adjacent individual segments still exists over the absorber layer and the electrically conductive polymer paste filled in the structured trench B (see FIG. 3 (d)).
  • the electrical connection of the individual segments in the sense of a series connection is significantly disturbed in their function.
  • A Short circuits at the connection points of the individual segments are avoided. It is a further object of the invention to reduce the generated by the connection of the individual segments inactive solar cell surface to a minimum and thus to increase the efficiency of the solar cell (aspect B).
  • structuring steps A and B are technologically identical, whereby for A and B now one and the same parameter sets or the same technology in the
  • Structuring can be used. Above that is the danger of a
  • the structuring A is carried out only after the filling of the trenches structured with B and C.
  • the structuring A can be placed arbitrarily close to the edge of the electrically conductive polymer paste.
  • a backfilling of the structured trench A with an electrically insulating paste is then no longer necessary.
  • the starting point is a substrate coated with the individual layers necessary for a thin-film solar cell (see Figure 1 and Figure 6 (a)).
  • the layers on the substrate are then subsequently patterned.
  • the layers are divided into individual segments. For each single segment, 3 structurings (A, B, C) are necessary (see Figure 6 (b)).
  • Structuring A and B separate the layers 3, 4 and 5 completely open so that layer 2 becomes visible.
  • Structuring C completely separates the layers 2, 3, 4 and 5 so that the substrate (1) becomes visible.
  • the separation of the layers can be done for example mechanically with a scriber. It is important to find the optimal parameters for the removal of the individual layers. For example, the force of the needle, the traversing speed of the needle, the radius of the needle tip or the number of passes of the needle can be adjusted.
  • the parameters for the structuring A and B are to be chosen so that damage to the layer 2 is avoided but still a complete
  • Structuring C are to be chosen such that a complete separation of the layer 2 is ensured without the substrate (1) being impaired in its function.
  • the substrate should not be superficially removed.
  • a superficial removal of the substrate is unproblematic as long as the stability of the substrate is not affected.
  • the filling of the trenches produced takes place by means of electrically insulating polymer paste (trenches A and C) and electrically conductive polymer paste (trench B).
  • electrically insulating polymer paste tilt A and C
  • electrically conductive polymer paste trench B
  • Dispensers are used with either a pressurized cartridge or a dispenser with a spindle valve or a dispenser with a jet valve, the latter system higher throughputs in a mass production
  • Polymer paste fills trenches A and C (see Figure 6 (c)).
  • the backfilling of the trenches A and C is to be carried out so that no electrically insulating polymer paste enters the trench B.
  • the trenches A and C must be completely filled without leaving any part of the trenches without backfilling.
  • the electrically conductive paste is applied in trench B and beyond trench C (see Figure 6 (d)).
  • the polymer pastes filled in the trenches must be dried after application in accordance with the manufacturer's instructions. This can be done depending on the polymer system of the pastes in a convection oven or under UV irradiation. Thus, an electrical connection is made between the back contact layer of one segment and the front contact layer of the adjacent segment (see Figure 6 (d)).
  • the electrically conductive polymer paste has to extend so far beyond the non-conductive filling of the trench C that an electrical contact of the transparent
  • Front contact layer is possible.
  • the size of the surface that touches the transparent front contact depends on the type of transparent front contact and the conductive polymer paste.
  • an optimization with regard to electrical losses and shadowing of active cell area must be carried out.
  • the starting point is a 15-75 ⁇ m thick polyimide film as substrate (1). This is coated by magnetron sputtering over the entire surface of about 0.2 to 2 pm thick example with molybdenum. This molybdenum layer serves as the back contact layer (2) of the solar cell. However, it is also possible to use different metals or metal layers as the back contact layer. On this molybdenum layer, the elements copper, indium, gallium and selenium are then deposited by co-evaporation in a vacuum. However, other known technologies can also be used
  • Deposition of the CIGS layer can be used. These include sequential deposition, galvanic deposition, printing technologies or ion beam assisted deposition. On this about 1 to 2 pm thick Cu (ln, Ga) Se 2 layer (absorber layer, photoactive layer (3)), a thin (10 to 100 nm) cadmium sulfide layer is then wet-chemically applied.
  • the CdS layer can also be represented by a vacuum-based technology. It is also inventive to use possible Cd-free buffer layers. On the buffer layer is followed by a thin (10 to 100 nm) intrinsic zinc oxide layer (i-ZnO) applied by means of RF sputtering (4).
  • the AI: ZnO layer can also consist of ITO.
  • the representation of the individual layers can be deposited both in a batch process and in a continuous process (for example roll-to-roll).
  • the polyimide tape provided with the above-mentioned coatings is cut to a size of 5 cm ⁇ 5 cm and is now
  • the 5 cm x 5 cm coated polyimide film is provided with 18 parallel structurings as shown in Figure 7 (b), with three structurings each grouped.
  • the sequence of the structuring lines (see Figure 7 (b)) is ABCABC ... etc.
  • the starting point is structuring A. This is done, for example, mechanically by means of a scriber.
  • the scriber itself is mounted on an x-y-z table and is computer-aided controlled. Depending on the
  • the processing parameters of the scriber (such as radius of the needle tip, contact pressure of the needle tip, speed of travel of the tip and number of passes of the tip) are adjusted so that the layers 3, 4 and 5 are completely removed along the structuring line without destroying the layer 2 thereby.
  • the length of the scriber is adjusted so that the layers 3, 4 and 5 are completely removed along the structuring line without destroying the layer 2 thereby.
  • Structuring line is in this case 5 cm (length of the coated
  • the width of the line is essentially determined by the radius of the
  • Needle tip determined. In the example, the line width was 70 m; other typical line widths are about 10 to 100 ⁇ .
  • Structuring A is completed, the structuring takes place B. This is offset parallel to the structuring A by about 300 ⁇ . However, the offset can also be at 50-500 ⁇ . Since structuring A and B are technologically identical, structuring B takes place according to the scheme of structuring A. After completion of structuring B, structuring C takes place. This takes place parallel to structuring B by 300 ⁇ m. However, the offset can also be at 50-500 ⁇ . Structuring C is carried out in the illustrated example by means of a scriber. In contrast to the structuring A and B, the parameters were adjusted so that in addition to the layers 3, 4 and 5, the layer 2 is severed.
  • Structuring group parallel to the first group is performed example offset by about 7 mm.
  • the third patterning group is then again offset by 7 mm from the second group and so on.
  • 6 groups of 3 structuring lines each are set (see Figure 7 (b)). It should be mentioned that the spacing of the structuring groups can be between 3 and 15 mm and u.a. depends on the electrical properties of the front contact. Likewise, first all structuring steps for the trench A on the 5 cm substrate and then the structuring steps B and C or in any other arbitrary order can be carried out.
  • trenches A and C are filled with an electrically insulating polymer paste on a x-y-z stage using a computer-controlled dispenser (see Figure 7 (c)).
  • the backfilling has to be done so that no electrically insulating paste runs into the trench B and closes it.
  • the backfilling of trenches A and C with electrically insulating paste must be complete. This is especially important for trench C, since this will subsequently be covered by an electrically conductive paste, which in turn can then penetrate into an incompletely insulated trench C and thus lead to short-circuiting of two segments.
  • Electrically insulating polymer pastes are commercially available from various
  • the line thickness of the applied paste depends on the flow properties of the paste. On the other hand, the line thickness on the parameters of the dispenser (pressure, which is applied to the cartridge;
  • Typical line widths are in the range of 1500 to 300 ⁇ .
  • the trenches must be filled over the entire length of the trenches (in this case 5 cm). After all trenches A and C with electrically insulating Paste has been filled, the paste must be cured according to the manufacturer's instructions by means of convection oven or IR or UV radiation.
  • all the trenches B can be filled with an electrically conductive paste with the aid of a dispenser (see Figure 7 (d)). Again, the line thickness depends on the one
  • the line thickness can be influenced by the parameters of the dispenser (pressure applied to the cartridge, application speed, diameter of the outlet opening of the cartridge, etc.).
  • the order of the electrically conductive paste must be carried out so that the trench B is completely filled without extending beyond the insulating filling of the trench A, otherwise there is a short circuit of the segment.
  • the electrically conductive paste must in each case be led beyond the insulating filling of the trench C, in order to guarantee contacting of the front contact layer of the following segment.
  • Line preparation of the electrically conductive fillings are at 400 to 700 ⁇ and depends u.a. from the distance of the trenches B and C from. Electrically conductive paste is commercially available from several manufacturers. After all trenches B have been filled with electrically conductive paste, the paste is depending on
  • Polymer paste reaches its conductivity usually by adding metallic particles, is given by the reflection of the light on these particles a good contrast to the solar cell material, since this indeed absorbs the light.
  • structuring A can thus be set as close as possible to the edge.
  • the structuring A can be adapted to the formations of the edges of the filling of electrically conductive paste. Both latter options can minimize the size of the inactive areas and thus increase the efficiency of the solar cells.
  • Process step (filling the trench A with electrically insulating paste) saved and thus reduced production costs.
  • the polyimide tape provided with the above-mentioned coatings is cut to a size of 5 cm ⁇ 5 cm and is now
  • the 5 cm ⁇ 5 cm coated polyimide film is first provided with 12 parallel patterns as shown in Figure 9 (b), with two patterns arranged in groups.
  • Structuring lines (see Figure 9 (b)) is BCBC ... etc.
  • the starting point is structuring B. This is done, for example, mechanically by means of a scriber.
  • the scriber itself is mounted on an x-y-z table and is computer-aided controlled.
  • the processing parameters of the scriber such as the radius of the needle point,
  • the length of the structuring line is in this case 5 cm (length of the coated substrate).
  • the width of the line is determined essentially by the radius of the needle tip. In this example, the line width was 70 ⁇ ; other typical line widths are around 10 to 100 pm.
  • the structuring C takes place. This takes place parallel to the structuring B offset by 300 pm. However, the offset can also be between 50 and 500 pm. Structuring C is also carried out by means of a scriber, for example. Unlike the structuring B, the parameters have now been adjusted so that in addition to the layers 3, 4 and 5, the layer 2
  • Structuring group is performed parallel to the first group offset by about 7.5 mm.
  • the third patterning group is then again offset by 7 mm from the second group and so on.
  • a total of 6 groups with 2 structuring lines each are set (see Figure 9 (b)).
  • the spacing of the structuring groups can be between 3 and 15 mm and u.a. depends on the electrical properties of the front contact and the distance and the width of the trenches B and C.
  • first all structuring steps for the trench B can be performed on the 5 cm substrate and then the structuring step C or in any other arbitrary order.
  • the trenches C are filled with an electrically insulating polymer paste with the aid of a computer-controlled dispenser on an xyz table (see Figure 9 (c)).
  • the backfilling has to be done so that no electrically insulating paste runs into the trench B and closes it.
  • the backfilling of trenches C with electrically insulating paste must be complete. This is of crucial importance, since this will subsequently be covered by an electrically conductive paste, which in turn then in a incompletely isolated trench C can penetrate into these and thus can lead to the short circuit of two segments.
  • Electrically insulating polymer pastes are commercially available from several manufacturers.
  • the line thickness of the applied paste depends on the flow properties of the paste. On the other hand, the line thickness can be adjusted via the parameters of the dispenser (pressure which is applied to the cartridge;
  • Typical line widths are in the range of 1500 to 300 pm.
  • the trenches must be filled over the entire length of the trenches (in this case 5 cm). After the trenches C have been filled with electrically insulating paste, the paste must be cured according to the manufacturer's instructions using a circulating air drying oven or IR or UV radiation.
  • all the trenches B can be filled with an electrically conductive paste with the aid of a dispenser (see Figure 9 (d)). Again, the line thickness depends on the one
  • the line thickness can be influenced by the parameters of the dispenser (pressure applied to the cartridge, application speed, diameter of the outlet opening of the cartridge, etc.).
  • the application of the electrically conductive paste must be carried out so that the electrically conductive paste in each case over the insulating filling of the trench C is also performed in order to guarantee a contact of the front contact layer of the following segment.
  • Typical line preparation of electrically conductive fillings are at 400 to 700 ⁇ and hangs u.a. from the distance of the trenches B and C from. Electrically conductive paste is commercially available from several manufacturers. After all trenches B have been filled with electrically conductive paste, depending on the manufacturer's instructions, the paste is cured in a circulating air drying oven or with IR or UV radiation.
  • the structuring A can take place.
  • Structure A is set to the left ( Figure 9 (e)) of the backfill of trench B.
  • the structuring A is performed, for example, mechanically using a scriber. Structuring A should on the one hand come as close as possible to the backfill of trench B.
  • Structuring A be adapted so that the optical losses (by separating solar active surface) are minimized.
  • All structuring can also be done by laser or photolithographically
  • layer packages can be interconnected with the method according to the invention, which are located both on rigid and on flexible substrates.
  • the substrate may be electrically insulating or electrically conductive.
  • an electrically insulating layer that is to say between substrate (1) and
  • Back contact layer (2) are applied to a short circuit of
  • the parameters of the structuring C can be chosen here so that the electrically insulating layer is removed or remains on the substrate, it is crucial that the back contact layer is completely severed.
  • the filling of the trenches A and C with electrically insulating polymer paste may also be replaced by a coating with an electrically insulating material (e.g., SiOx) by means of vacuum deposition or electrodeposition.
  • an electrically insulating material e.g., SiOx
  • the filling of trench B with electrically conductive polymer paste may also be accomplished by coating with an electrically conductive material (e.g., silver)
  • Vacuum deposition or electrodeposition can be replaced.
  • the structuring steps A, B and C can be set so densely that there are no more layer packages between the structured trenches (see Figure 10 (i)).
  • the structuring steps A, B and C can be set so densely that there are no more layer packages between the structured trenches (see Figure 10 (i)).
  • Structuring step for the trench A and the trench B replaced by a single structuring step.
  • this also has the advantage that the inactive surface of the solar cell is reduced and thus the efficiency of the solar cell is increased.
  • the filling of the trenches with electrically insulating and electrically conductive paste can be carried out in addition to a dispenser by means of screen printing, stencil printing, ink jet or spraying method (using masks). In general, a combination of the individual methods mentioned is conceivable.
  • paste systems based on silicone or acrylate In addition to electrically insulating and electrically conductive pastes based on polymers, it is also possible to use paste systems based on silicone or acrylate.
  • this may e.g. in the form of individual contact fingers continue on the active
  • the inventive method can in principle be applied to any type of
  • transparent front side electrode e.g., electrically conductive oxide
  • electrically insulating layer e.g., electrically insulating polymer paste
  • electrically conductive layer e.g., polymer paste filled with metallic particles

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une interconnexion série de photopiles en couches minces. Le but de l'invention est de concevoir le procédé de structuration de manière à permettre l'interconnexion fiable et efficace, d'éviter tout court-circuit et d'agrandir les surfaces utiles des photopiles. Les revendicqations 1 et 14 donnent la solution qui est adaptée à la production de masse.
EP10760919.0A 2009-09-20 2010-09-17 Interconnexion série de photopiles en minces couches Withdrawn EP2478559A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009041905A DE102009041905B4 (de) 2009-09-20 2009-09-20 Verfahren zur seriellen Verschaltung von Dünnschichtsolarzellen
PCT/EP2010/005718 WO2011032717A2 (fr) 2009-09-20 2010-09-17 Interconnexion série de photopiles en minces couches

Publications (1)

Publication Number Publication Date
EP2478559A2 true EP2478559A2 (fr) 2012-07-25

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EP10760919.0A Withdrawn EP2478559A2 (fr) 2009-09-20 2010-09-17 Interconnexion série de photopiles en minces couches

Country Status (6)

Country Link
US (1) US8778723B2 (fr)
EP (1) EP2478559A2 (fr)
CN (1) CN102598268A (fr)
BR (1) BR112012006222A2 (fr)
DE (1) DE102009041905B4 (fr)
WO (1) WO2011032717A2 (fr)

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EP3582268A1 (fr) 2018-06-11 2019-12-18 Armor Procédé de fabrication d'un module photovoltaïque et module photovoltaïque ainsi obtenu
EP3945589A1 (fr) 2020-07-27 2022-02-02 Armor Procédé de fabrication d'un module semi-conducteur et module semi-conducteur ainsi obtenu

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DE102012205378A1 (de) * 2012-04-02 2013-10-02 Robert Bosch Gmbh Verfahren zur Herstellung von Dünnschichtsolarmodulen sowie nach diesem Verfahren erhältliche Dünnschichtsolarmodule
DE102012205978A1 (de) * 2012-04-12 2013-10-17 Robert Bosch Gmbh Photovoltaische Dünnschichtsolarmodule sowie Verfahren zur Herstellung solcher Dünnschichtsolarmodule
CN103474485B (zh) * 2013-09-17 2016-08-17 北京汉能创昱科技有限公司 一种柔性薄膜太阳能电池及其制备方法
US20150303326A1 (en) * 2014-04-18 2015-10-22 Tsmc Solar Ltd. Interconnect for a thin film photovoltaic solar cell, and method of making the same
NL2014041B1 (en) * 2014-12-23 2016-10-12 Stichting Energieonderzoek Centrum Nederland Method for manufacturing a thin film solar cell arrangement and such a thin film solar cell arrangement.
FR3060854B1 (fr) * 2016-12-16 2021-05-14 Armor Procede de fabrication d'un module photovoltaique et module photovoltaique ainsi obtenu
DE102019117215B4 (de) * 2019-06-26 2022-10-06 Deutsches Zentrum für Luft- und Raumfahrt e.V. Raumfahrzeugmembraneinheit
WO2022143480A1 (fr) * 2020-12-28 2022-07-07 中国科学院苏州纳米技术与纳米仿生研究所 Ensemble composant photoélectrique flexible et procédé de fabrication associé
CN115172500B (zh) * 2022-07-12 2023-08-15 中国电子科技集团公司第十八研究所 一种激光电池组件

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WO2011032717A3 (fr) 2012-03-08
CN102598268A (zh) 2012-07-18
DE102009041905B4 (de) 2013-08-22
US20120276681A1 (en) 2012-11-01
WO2011032717A2 (fr) 2011-03-24
US8778723B2 (en) 2014-07-15
BR112012006222A2 (pt) 2016-05-31

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