EP2472595A4 - Gestapeltes photovoltaikelement und verfahren zur herstellung des gestapelten photovoltaikelements - Google Patents

Gestapeltes photovoltaikelement und verfahren zur herstellung des gestapelten photovoltaikelements

Info

Publication number
EP2472595A4
EP2472595A4 EP10811916.5A EP10811916A EP2472595A4 EP 2472595 A4 EP2472595 A4 EP 2472595A4 EP 10811916 A EP10811916 A EP 10811916A EP 2472595 A4 EP2472595 A4 EP 2472595A4
Authority
EP
European Patent Office
Prior art keywords
photovoltaic element
stacked photovoltaic
manufacturing
stacked
manufacturing stacked
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10811916.5A
Other languages
English (en)
French (fr)
Other versions
EP2472595A1 (de
Inventor
Makoto Higashikawa
Takako Shimizu
Shinya Honda
Yasuaki Ishikawa
Yuichi Sano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2009195673A external-priority patent/JP2011049304A/ja
Priority claimed from JP2009195682A external-priority patent/JP2011049305A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of EP2472595A1 publication Critical patent/EP2472595A1/de
Publication of EP2472595A4 publication Critical patent/EP2472595A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
EP10811916.5A 2009-08-26 2010-08-25 Gestapeltes photovoltaikelement und verfahren zur herstellung des gestapelten photovoltaikelements Withdrawn EP2472595A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009195673A JP2011049304A (ja) 2009-08-26 2009-08-26 積層型光起電力素子
JP2009195682A JP2011049305A (ja) 2009-08-26 2009-08-26 積層型光起電力素子の製造方法および積層型光起電力素子
PCT/JP2010/064407 WO2011024867A1 (ja) 2009-08-26 2010-08-25 積層型光起電力素子および積層型光起電力素子の製造方法

Publications (2)

Publication Number Publication Date
EP2472595A1 EP2472595A1 (de) 2012-07-04
EP2472595A4 true EP2472595A4 (de) 2013-10-30

Family

ID=43627967

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10811916.5A Withdrawn EP2472595A4 (de) 2009-08-26 2010-08-25 Gestapeltes photovoltaikelement und verfahren zur herstellung des gestapelten photovoltaikelements

Country Status (3)

Country Link
US (1) US20120138134A1 (de)
EP (1) EP2472595A4 (de)
WO (1) WO2011024867A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101091361B1 (ko) * 2010-07-30 2011-12-07 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법
US10319872B2 (en) * 2012-05-10 2019-06-11 International Business Machines Corporation Cost-efficient high power PECVD deposition for solar cells
CN103000740B (zh) * 2012-11-28 2015-09-09 中国科学院苏州纳米技术与纳米仿生研究所 GaAs/GaInP双结太阳能电池及其制作方法
GB201820427D0 (en) * 2018-12-14 2019-01-30 Univ Oxford Innovation Ltd Device interlayer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1463124A2 (de) * 2003-03-26 2004-09-29 Canon Kabushiki Kaisha Gestapeltes photovoltaisches Bauelement und Herstellungsverfahren
EP1463126A2 (de) * 2003-03-26 2004-09-29 Canon Kabushiki Kaisha Gestapeltes photovoltaisches Bauelement
US20070267055A1 (en) * 2005-07-14 2007-11-22 Konarka Technologies, Inc. Tandem Photovoltaic Cells
WO2010058640A1 (ja) * 2008-11-19 2010-05-27 三菱重工業株式会社 光電変換装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4612411A (en) * 1985-06-04 1986-09-16 Atlantic Richfield Company Thin film solar cell with ZnO window layer
JP3651932B2 (ja) * 1994-08-24 2005-05-25 キヤノン株式会社 光起電力素子用裏面反射層及びその形成方法並びに光起電力素子及びその製造方法
JP2002261308A (ja) 2001-03-01 2002-09-13 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換モジュール
JP2002363744A (ja) * 2001-06-04 2002-12-18 Sharp Corp 多層膜製造装置および製造方法
US7049190B2 (en) * 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP2004311970A (ja) 2003-03-26 2004-11-04 Canon Inc 積層型光起電力素子
DE102004031950A1 (de) * 2003-06-26 2005-02-10 Kyocera Corp. Halbleiter/Elektroden-Kontaktstruktur und eine solche verwendendes Halbleiterbauteil
JP2006310348A (ja) * 2005-04-26 2006-11-09 Sanyo Electric Co Ltd 積層型光起電力装置
US7601558B2 (en) * 2006-10-24 2009-10-13 Applied Materials, Inc. Transparent zinc oxide electrode having a graded oxygen content
JP4485506B2 (ja) 2006-10-27 2010-06-23 シャープ株式会社 薄膜太陽電池および薄膜太陽電池の製造方法
US20090139558A1 (en) * 2007-11-29 2009-06-04 Shunpei Yamazaki Photoelectric conversion device and manufacturing method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1463124A2 (de) * 2003-03-26 2004-09-29 Canon Kabushiki Kaisha Gestapeltes photovoltaisches Bauelement und Herstellungsverfahren
EP1463126A2 (de) * 2003-03-26 2004-09-29 Canon Kabushiki Kaisha Gestapeltes photovoltaisches Bauelement
US20070267055A1 (en) * 2005-07-14 2007-11-22 Konarka Technologies, Inc. Tandem Photovoltaic Cells
WO2010058640A1 (ja) * 2008-11-19 2010-05-27 三菱重工業株式会社 光電変換装置
EP2348541A1 (de) * 2008-11-19 2011-07-27 Mitsubishi Heavy Industries, Ltd. Photoelektrische umwandlungsvorrichtung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2011024867A1 *

Also Published As

Publication number Publication date
US20120138134A1 (en) 2012-06-07
WO2011024867A1 (ja) 2011-03-03
EP2472595A1 (de) 2012-07-04

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