EP2438009A1 - Verfahren zur aufbereitung von sägeabfällen zur rückgewinnung von silizium für die herstellung von solarsilizium - Google Patents
Verfahren zur aufbereitung von sägeabfällen zur rückgewinnung von silizium für die herstellung von solarsiliziumInfo
- Publication number
- EP2438009A1 EP2438009A1 EP10722293A EP10722293A EP2438009A1 EP 2438009 A1 EP2438009 A1 EP 2438009A1 EP 10722293 A EP10722293 A EP 10722293A EP 10722293 A EP10722293 A EP 10722293A EP 2438009 A1 EP2438009 A1 EP 2438009A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- silicon
- granules
- reaction vessel
- production
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
Definitions
- the invention relates to a method for the treatment of sawing waste for the recovery of solar silicon for the production of solar cells
- Polycrystalline silicon is used as a starting material of silicon for semiconductors and as a raw material of solar cells. With the proliferation of solar cells, the demand for polycrystalline silicon, which is a raw material for it, has also increased. The original raw materials for the solar and semiconductor industries are the same. However, the silicon for the
- Microchips are a hundred times purer than a solar cell.
- the solar industry has sourced its silicon directly or indirectly from the semiconductor industry via waste generated on the way to the wafer.
- the silicon ingots are cut with wire saws into wafers having an average thickness of approximately 180 micrometers. Since the sawing wires have a diameter of about 120 microns, each wafer is ground about 150 microns of silicon. This means that about 45% of the expensive starting material is machined and washed away in the slurry. And if with thinning wafers - currently If disks with a diameter of just 160 microns are already planned for series production - and if the cutting thickness does not decrease proportionally as well, the loss will logically increase. Since a substantial reduction in the diameter of the saw wire is hardly realistic, ways are sought to reuse the accumulated sawing waste. Increased silicon prices are also increasing pressure to recover the material.
- the machined silicon accumulates in the so-called slurry, a dispersion of silicon carbide in glycol. Together with the wire, it allows the sawing process.
- the separation of the silicon from the silicon carbide is carried out by classification in a centrifuge or in hydrocyclones.
- the silicon is in the form of small particles of about 1 micron size. It is heavily contaminated with iron from the saw wire and silicon carbide. Therefore, it will be far below value z. B. used in the steel industry.
- DE 10118483 A1 describes a continuous process for the direct synthesis of silanes by reacting finely divided silicon metal in a fluidized bed, wherein a product stream is discharged from the fluidized bed containing gaseous silanes further gaseous reaction products, unreacted chlorine compounds and silicon-containing dust, in which at least one part the dust in the form of a suspension in a liquid which is selected from liquid silanes, other liquid reaction products and mixtures thereof, is introduced into the fluidized bed.
- the resulting in the process finely divided dusts, which are discharged with the reaction product and contain silicon, should be able to be used effectively again.
- the grain size of the dust is preferably at most 30 micrometers.
- the object of the present invention is to provide a method by means of which the silicon-containing solid constituents of the wastes obtained by wire sawing of silicon wafers are converted into recyclable recyclables almost residue-free in a continuous process, which can be used directly in the production of silicon for wafers.
- the method according to the invention is characterized by the features of patent claim 1.
- starting materials for the silicon deposition for example in a Siemens process, are to be recovered primarily from the solid sawing waste of the wafer production in an independent and continuous process.
- the solid components of the sawing waste mainly comprise silicon, which is machined during sawing, silicon carbide, which is used as abrasively acting hard material in the sawing suspension, and iron, which is rubbed off by the sawing wire.
- the silicon fractions contained in these solid constituents of the sawcot waste have the required purity because they are produced directly in the wafer production.
- These solid components, which are already separated from the liquid components are compacted in a preliminary process preferably into a solid dry mass which is formed into granules of suitable size.
- the fluidized bed process the granules, which has a particle size of about a few hundred micrometers, is blown into the reaction vessel.
- the granules are heated there to a temperature of about 350 0 C and from below hydrogen chloride is blown through the fluidized bed.
- large amounts of silicon tetrachloride and hydrogen are formed.
- the hydrogen can be easily dissolved out of the reaction gas.
- the liberated from the chlorination gaseous mixture of silicon tetrachloride and trichlorosilane is divided into a plant by fractional distillation into its components.
- a second preferred method of recovering silanes is carried out in the shaft furnace.
- the granules which has a particle size of a few millimeters to a few centimeters, piled up on a grate.
- the granules are then heated to a temperature of 650 0 C. and from below hydrogen chloride is blown through the bed.
- large amounts of silicon tetrachloride and hydrogen are formed, as in the fluidized-bed process.
- the further processing of the reaction gases is carried out analogously to the aforementioned fluidized bed process.
- silicon tetrachloride and trichlorosilane are carried out by methods known in the art.
- trichlorosilane can be converted to pure silicon and HCl by the action of hydrogen.
- the silicon tetrachloride is converted to trichlorosilane.
- the solid end product of the process is SiC, which is not chemically converted in the process and falls through the grates quasi as "ash" and can be removed from the bottom of the reactor
- the resulting very finely divided SiC can be used, for example, in the ceramics industry.
- the iron content in the granulate is converted in the process by the HCl into iron chloride, which escapes in gaseous form and can easily be separated from the other reaction gases after condensation.
- the advantages of the method according to the invention are, in particular, that the solid constituents of the sawing waste, which are obtained in large quantities, are converted back into basic materials of silicon production in an independent process and that the chlorosilanes obtained can be converted directly into pure silicon without elaborate purification processes.
- the cycle of silicon in the solar production is closed.
- the approximately 50% silicon waste resulting from the wafer production are completely recycled back into the process by the present process.
- the silicon recovered in this way has the same purity that the silicon block had when sawing the wafers.
- 2006/137098 A1 is described, separated into its components glycol, reusable Bares silicon carbide and the silicon-containing fines.
- the fines fall as a wet filter cake.
- This filter cake is divided according to the required particle size and formed on a granulation to balls.
- a stable granulate is obtained, which, for example, with a preferred particle size of a few hundred microns in a fluidized bed furnace, as described above, converted by a conventional fluidized bed process to trichlorosilane and silicon tetrachloride and hydrogen and ferric chloride.
- the reaction gases are led out at the top of the reaction vessel and separated by prior art methods.
- the remaining of the granules silicon chloride is removed at the bottom of the reaction vessel.
- the granule size is preferably a few millimeters to a few centimeters.
- the granules are stacked on the grate with a, while from below through the grate of hydrogen chloride is blown through the granular bed. While the reaction gases are led out again at the top of the reaction vessel, the remaining silicon chloride falls down through the grate. In order to carry on the process continuously granulate is charged accordingly.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009020143A DE102009020143A1 (de) | 2009-05-04 | 2009-05-04 | Verfahren zur Aufbereitung von Sägeabfällen zur Rückgewinnung von Silizium für die Herstellung von Solarsilizium |
PCT/DE2010/000513 WO2010127669A1 (de) | 2009-05-04 | 2010-05-02 | Verfahren zur aufbereitung von sägeabfällen zur rückgewinnung von silizium für die herstellung von solarsilizium |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2438009A1 true EP2438009A1 (de) | 2012-04-11 |
EP2438009B1 EP2438009B1 (de) | 2013-08-21 |
Family
ID=42827336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP10722293.7A Not-in-force EP2438009B1 (de) | 2009-05-04 | 2010-05-02 | Verfahren zur aufbereitung von sägeabfällen zur rückgewinnung von silizium für die herstellung von solarsilizium |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP2438009B1 (de) |
DE (1) | DE102009020143A1 (de) |
WO (1) | WO2010127669A1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100061911A1 (en) | 2008-08-04 | 2010-03-11 | Hariharan Alleppey V | METHOD TO CONVERT SILICON POWDER TO HIGH PURITY POLYSILICON THROUGH INTERMEDIATE SiF4 |
DE102010044108A1 (de) * | 2010-11-18 | 2012-05-24 | Evonik Degussa Gmbh | Herstellung von Chlorsilanen aus kleinstteiligem Reinstsilicium |
EP2474390A1 (de) * | 2011-01-06 | 2012-07-11 | Tzer-Huang Guo | Verfahren und Vorrichtung für Recycling und Aufbereitung von beim Schneiden von Monosilicium verwendeter Abfallflüssigkeit |
DE102011115081B4 (de) | 2011-09-19 | 2017-08-31 | Baufeld-Mineralölraffinerie GmbH | Verfahren zur Gewinnung von Solarsilizium aus Sägeabfällen |
DE102012015417B4 (de) | 2012-08-02 | 2018-08-16 | Technische Universität Bergakademie Freiberg | Verfahren zur Aufarbeitung von Sägerückständen aus der Produktion von Siliciumwafern |
DE102013201742A1 (de) | 2012-12-21 | 2014-06-26 | Evonik Industries Ag | Verfahren zur Aufbereitung von Silizium-haltigem feinkörnigen Material bei der Herstellung von Chlorsilanen |
DE102012224182A1 (de) | 2012-12-21 | 2014-07-10 | Evonik Degussa Gmbh | Verfahren zur Aufbereitung feinteiliger Feststoffe bei der Herstellung von Chlorsilanen |
WO2014184090A1 (de) * | 2013-05-14 | 2014-11-20 | Carl-Stefan Thoene | Verfahren zur aufbereitung und wiedergewinnung von silizium |
EP3088358A1 (de) | 2015-04-28 | 2016-11-02 | Evonik Degussa GmbH | Verfahren zur aufbereitung feinteiliger feststoffe bei der herstellung von chlorsilanen |
EP3100978A1 (de) | 2015-06-02 | 2016-12-07 | Evonik Degussa GmbH | Aufbereitung feinteiliger feststoffe bei der herstellung von chlorsilanen durch agglomerieren und kompaktierung |
EP3100979A1 (de) | 2015-06-02 | 2016-12-07 | Evonik Degussa GmbH | Aufbereitung feinteiliger feststoffe bei der herstellung von chlorsilanen durch sintern bei niedrigen temperaturen |
FR3075776B1 (fr) | 2017-12-21 | 2020-10-02 | Rosi | Granules de silicium pour la preparation de trichlorosilane et procede de fabrication associe |
WO2020200440A1 (de) | 2019-04-03 | 2020-10-08 | Wacker Chemie Ag | Verfahren zur herstellung von siliciummetall-haltigen agglomeraten |
CN114583135A (zh) * | 2022-03-15 | 2022-06-03 | 中国科学院过程工程研究所 | 一种利用切割废硅粉一步制成的球形硅碳复合材料及其制备方法与应用 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE792542A (fr) * | 1971-12-11 | 1973-03-30 | Degussa | Procede pour la fabrication de chlorosilanes exempts de metaux lors de la chloration ou l'hydrochloration de ferrosilicium |
DE2623290A1 (de) * | 1976-05-25 | 1977-12-08 | Wacker Chemitronic | Verfahren zur herstellung von trichlorsilan und/oder siliciumtetrachlorid |
DE2807951A1 (de) * | 1978-02-24 | 1979-08-30 | Wacker Chemie Gmbh | Verfahren zum verwerten von elementares silicium enthaltendem reaktionsrueckstand |
DE10030251A1 (de) * | 2000-06-20 | 2002-01-03 | Degussa | Abtrennung von Metallchloriden aus gasförmigen Reaktionsgemischen der Chlorsilan-Synthese |
DE102004017453A1 (de) * | 2004-04-08 | 2005-10-27 | Wacker-Chemie Gmbh | Verfahren zur Herstellung von Trichlormonosilan |
ITRM20050329A1 (it) | 2005-06-24 | 2006-12-25 | Guido Fragiacomo | Procedimento per il trattamento di sospensioni abrasive esauste per il recupero delle loro componenti riciclabili e relativo impianto. |
WO2008133525A1 (en) | 2007-04-25 | 2008-11-06 | Norsk Hydro Asa | A process for the recycling of high purity silicon metal |
US20100061911A1 (en) * | 2008-08-04 | 2010-03-11 | Hariharan Alleppey V | METHOD TO CONVERT SILICON POWDER TO HIGH PURITY POLYSILICON THROUGH INTERMEDIATE SiF4 |
-
2009
- 2009-05-04 DE DE102009020143A patent/DE102009020143A1/de not_active Withdrawn
-
2010
- 2010-05-02 WO PCT/DE2010/000513 patent/WO2010127669A1/de active Application Filing
- 2010-05-02 EP EP10722293.7A patent/EP2438009B1/de not_active Not-in-force
Non-Patent Citations (1)
Title |
---|
See references of WO2010127669A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO2010127669A1 (de) | 2010-11-11 |
EP2438009B1 (de) | 2013-08-21 |
DE102009020143A1 (de) | 2010-11-11 |
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