EP2414802A1 - Agencement de détection pour la détection de hautes pressions - Google Patents

Agencement de détection pour la détection de hautes pressions

Info

Publication number
EP2414802A1
EP2414802A1 EP10701550A EP10701550A EP2414802A1 EP 2414802 A1 EP2414802 A1 EP 2414802A1 EP 10701550 A EP10701550 A EP 10701550A EP 10701550 A EP10701550 A EP 10701550A EP 2414802 A1 EP2414802 A1 EP 2414802A1
Authority
EP
European Patent Office
Prior art keywords
sensor
sensor element
membrane
opening
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10701550A
Other languages
German (de)
English (en)
Inventor
Marcus Ahles
Hubert Benzel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP2414802A1 publication Critical patent/EP2414802A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L7/00—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements
    • G01L7/02—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges
    • G01L7/08—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type
    • G01L7/082—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type construction or mounting of diaphragms

Definitions

  • the invention relates to a sensor arrangement for detecting high pressures with a micromechanical sensor element which is arranged on a carrier and is mounted on this carrier, for example on a metal base or in a housing.
  • a membrane is formed, which spans a cavity with a rear opening.
  • the carrier has a through opening and is connected to the rear side of the sensor element in such a way that the through opening opens into the rear opening of the cavern.
  • Such a sensor arrangement with a silicon chip as a sensor element is described in the German patent application DE 10 2004 006 199 A1.
  • a membrane is formed, in which piezoresistors for signal detection are integrated.
  • the membrane was exposed here by etching the back side of the chip substrate. Accordingly, the diameter of the rear opening of the resulting cavern under the membrane is at least as large as the membrane diameter.
  • the sensor element was then bonded to a metallized backplate glass support so that the glass support with the sensor element can be soldered to a metal support.
  • the glass carrier is used in this structure to reduce the resulting during assembly and acting on the sensor element mechanical stress.
  • the pressurization of the sensor membrane takes place here via a passage opening in the glass carrier, which opens into the cavern under the membrane.
  • This through-opening is usually produced by ultrasonic drilling, laser treatment, sandblasting or temperature treatment by embossing in the glass carrier. This results in microdefects in the sidewall of the through-hole opening, while the top of the glass slide is largely free of such defects.
  • annular recess is formed in the back of the sensor element, which is arranged over the edge region of the passage opening of the carrier, so that the connection surface between the sensor element and carrier does not reach to the edge of the passage opening.
  • the annular recesses can be made round, rectangular or square, advantageously adapted to the shape of the membrane.
  • the shape of the passage opening in the carrier is independent of this.
  • a mechanical stress maximum occurs within the glass carrier, which is proportional to the pressure to be measured.
  • this voltage maximum is thus either in a region below the defect-free glass surface or in the edge region of the passage opening, the wall of which identifies microdefects.
  • cracks first form at the point of maximum stress in the glass just below the silicon-glass compound, which can ultimately lead to a breakup in the connection area.
  • the sensor membrane can be relatively small, as is advantageous for the detection of high pressures, even if the passage opening in the carrier is larger than the membrane.
  • the passage opening should namely not fall below a minimum size, since in too small holes particles, dirt or other media can collect and set, which affects the function of the sensor assembly.
  • the implementation of the measures according to the invention requires only a simple modification of the standard manufacturing process of the sensor elements. Both the carrier and the housing or the mounting surface remain unaffected.
  • the membrane area should be relatively small for measurements in higher pressure ranges. Since the membrane size is independent of the size of the passage opening due to the recess formed in the back of the sensor element according to the invention, the membrane area can also be smaller than the cross-sectional area of the passage opening, wherein the membrane shape is arbitrary. Thus, the membrane may be round or square, such. B. rectangular or square. To further reduce the sensitivity, the membrane can be formed annular as a boss membrane. The particular advantage here is that circuit parts can be arranged in the stiffened middle region of such a ring membrane in order to keep the chip area as small as possible.
  • the annular depression in the rear side of the sensor element merges into the rear opening of the cavern.
  • an adjustment offset between the sensor element and the carrier can be compensated in a simple manner with the help of the circumferential recess.
  • the circumferential depression in the rear side of the sensor element can also be formed at a distance from the rear opening of the cavity.
  • a groove is formed in the outer edge region of the annular depression in the sensor element rear side.
  • FIG. 1 shows a schematic sectional view of a first sensor arrangement 10 according to the invention
  • FIG. 2 shows a schematic sectional view of a second sensor arrangement 20 according to the invention
  • FIG. 3 shows a schematic sectional view of a third sensor arrangement 30 according to the invention
  • FIGS. 4a to 4d illustrate a first variant of the method for producing the sensor arrangement 10 shown in FIG. 1 on the basis of schematic sectional representations and FIGS FIGS. 5a to 5d illustrate a second variant of the method for producing the sensor arrangement 10 shown in FIG. 1 on the basis of schematic sectional representations.
  • the sensor arrangement 10 shown in FIG. 1 serves to detect high pressures.
  • the sensor arrangement 10 comprises a micromechanical sensor element 1 1, which is arranged on a carrier 1 with a passage opening 2.
  • the sensor element 1 1 is mounted on the carrier 1, for example in a housing or on a support base, wherein the carrier 1 is used to reduce the resulting mechanical stresses.
  • the sensor element 11 is a silicon chip, in whose upper side a membrane 12 is formed with piezoresistive transducer elements 16 for signal detection.
  • the sensor element 1 1 could also be made of a different semiconductor material.
  • the membrane 12 spans a cavity 13 which has been produced by trench etching of the chip back side.
  • the carrier 1 is a glass carrier 1 with a smooth, defect-free upper side, which is largely free of microdefects.
  • the passage opening 2 in the glass carrier 1 was realized in the form of a bore 2. Accordingly, the wall of the through hole 2 is rough and micro-cracked.
  • the sensor element 1 1 is arranged on the glass carrier 1 that the bore 2 opens into the rear opening 14 of the cavity 13.
  • Sensor element 1 1 and glass substrate 1 was prepared by anodic bonding.
  • the weak point of the sensor arrangement 10 described here thus lies in the region of the glass carrier 1 which adjoins the edge of the connecting surface between the silicon chip 11 and the glass carrier 1.
  • the membrane diameter is smaller than the diameter of the bore 2.
  • annular depression 15 has been produced in the chip rear side, which is arranged above the edge region of bore 2.
  • the recess 15 here represents a superficial widening of the rear opening 14 of the cavity 13, since the recess 15 merges into the cavity 13.
  • sensor elements are usually used with relatively small sensor membrane and relatively large membrane thickness. Therefore, the sensor membrane of these sensor elements is often much smaller than the
  • FIG. 2 shows a sensor arrangement 20 with a particularly small sensor membrane 22, which was produced by means of a backside trench process and a stop layer 27 buried in the silicon of the sensor element 21.
  • the stop layer 27 may consist, for example, of an oxide layer which has been introduced into a silicon wafer over the entire surface or else in a structured manner. After exposing the membrane 22, the stop layer 27 can optionally be removed, for example by a wet-chemical etching process or a dry etching process; it is also possible to use an HF vapor or gas phase etching step.
  • piezoresistors 26 were integrated for signal detection, and the side of the membrane 22 parts of an evaluation circuit 28 are arranged.
  • the sensor element 21 was also bonded to a polished glass carrier 1 with a through-hole 2, so that the bore 2 opens into the cavity 23 under the sensor membrane 22.
  • an annular recess 25 is formed in the back of the sensor element 21, which concentrically and here at a distance from the rear opening
  • the width of the recess 25 was selected according to the manufacturing and adjustment tolerances in the connection of silicon chip 21 and glass substrate 1.
  • a sensor assembly 30 is shown with an annular membrane 32, which is also referred to as Bossmembran.
  • annular membrane 32 which is also referred to as Bossmembran.
  • Such ring membranes have a comparatively low sensitivity and a relatively high membrane bursting pressure and are therefore particularly suitable for the detection of high pressures.
  • piezoresistors 36 for detecting the membrane deflection are integrated here.
  • Parts of an evaluation circuit 38 are arranged laterally of the membrane structure. At this point, it should be noted that circuit parts can also be arranged in the stiffened middle region 321 of the membrane structure in order to produce the parts which are required for the
  • the ring membrane 32 was also exposed by means of a backside trench process and a stop layer 37 buried in the silicon of the sensor element 31. In this case, an annular cavern 33 with an annular rear opening 34 was created below the annular membrane 32. It was also in the
  • annular recess 35 is formed, which is arranged concentrically and here at a distance from the rear opening 34 of the cavity 33.
  • the sensor element 31 was also bonded to a polished glass carrier 1 with a through-hole 2, so that the bore 2 opens into the annular cavity 33 under the ring membrane 32.
  • the annular recess 35 was positioned over the edge region of the passage opening 2, so that the connection surface between the sensor element 31 and the carrier 1 does not reach the edge of the passage opening 2 and the maximum stress 3 lies in a region below the smooth carrier top side.
  • the annular recess 35 in the back of the sensor element 31 was here generated in a two-stage trench step to a groove 39 in the outer
  • This groove 39 or the adjacent elastic lip 391 in the back of the chip additionally contributes to stress reduction in the glass substrate 1, which increases the bursting strength of the sensor arrangement 30 as a whole.
  • circuit elements such as e.g. Piezo resistor 16 for signal detection and circuit parts 18 for signal processing and signal evaluation on the front side of a silicon wafer 40 and 50 generated.
  • FIG. 4 a shows a detail of a silicon wafer 40, in whose upper side piezoresistors 16 and circuit parts 18 of three sensor elements are integrated and whose rear side is provided with a corresponding masking layer 41.
  • the exposure of the sensor membranes 12 takes place in a second etching step by trenches.
  • the trench process is a sequence of i-sotropic plasma etching with SF 6 in alternation with sidewall passivation, so that material removal takes place essentially only in the depth and not in the lateral direction.
  • the trench process begins here with a passivation step, in which the walls of the wide recesses 42 are passivated. The ion bombardment during the subsequent etching step first removes the passivation at the bottom of the recesses 42 and then further into the
  • FIG. 4 c shows the silicon wafer 40 after completion of the trench process, in which the caverns 13 are formed under the sensor membranes 12.
  • the recesses 42 form an extension of the rear openings 14 of these caverns 13.
  • the edge region of a recess 42 represents an annular recess according to the invention in the back of a sensor element, which merges here into the cavern 13 under the sensor membrane 12.
  • the masking layer 41 is removed before the silicon wafer 40 is bonded with its structured rear side to a polished glass substrate 1 with through-holes 2.
  • the through-holes 2 are arranged so that they each open into a cavern 13 under a sensor membrane 12 and the annular recesses 42 are arranged in the wafer rear side in each case over the edge region of a through hole 2.
  • the sensor elements 1 for example, by sawing, isolated, whereby the glass substrate 1 is severed. 4d shows the sensor arrangements 10 after the singulation process and before assembly in a housing.
  • a groove can also be created in the two-mask process.
  • a first mask 51 in the form of a structured oxide layer is first applied to the rear side of the silicon wafer 50.
  • this first mask 51 for example made of oxide, size, shape and position of the annular depression according to the invention are defined in the rear side of the sensor elements.
  • a second mask 52 is applied, with the size, shape and position of the caverns and thus also the sensor membranes is defined.
  • This may be, for example, a resist mask.
  • FIG. 5a shows a silicon wafer 50 with such a doubly masked backside.
  • the mask 52 are smaller than the openings in the first mask 51 and arranged within the region of these openings in the first mask 51.
  • caverns 13 are now generated in the wafer back side through the openings in the second mask, which is shown in Fig. 5b.
  • a second trench step takes place via the openings in the first mask 51, which have a larger opening cross-section than the caverns 13. Accordingly, not only the caverns 13 are further deepened in this second trench step to the sensor membranes 12th expose.
  • the rear openings 14 of the caverns 13 are superficially extended, which is illustrated by Fig. 5c. These extensions of the rear openings 14 each represent an annular circumferential recess 15 in the wafer backside, which merges into a cavern 13 under a sensor membrane 12.
  • the two-mask process also makes it possible to produce a circumferential recess 25 or 35 which, as shown in FIGS. 2 and 3, is arranged at a distance from the rear opening 24 or 34, so that the connection surface between sensor element 21 or 31 and Carrier 1 does not reach to the edge of the through hole 2.
  • the mask 51 is structured in such a way that a ring remains outside the rear opening 24 or 34 and within the groove 25 or 35.
  • the silicon wafer 50 with its structured rear side is formed on a polished glass substrate 1 with through-holes 2 after the first masking layer 51 has also been removed.
  • the through-bores 2 are here also arranged and dimensioned so that they each open into a cavern 13 under a sensor membrane 12 and the annular extension 15 of the rear-side openings 14 is arranged above the edge region of a through-bore 2. Only then are the sensor elements 1 1, for example by sawing, isolated, whereby the glass carrier 1 is severed.
  • Fig. 5d shows the resulting sensor assemblies 10 prior to assembly in a housing.
  • a groove in the outer edge region of the annular recess in the back of the chip can be generated here simply by modification of the second step of the trench.
  • Chip back side is spaced from the rear opening of the cavern.
  • inventive structure of the sensor element of the claimed sensor arrangement can alternatively also be produced in an isotropic or anisotropic wet-chemical process.
  • the invention is not limited to sensor arrangements with piezore-sistivem transducer principle but also includes, for example, sensor arrangements with a capacitive, inductive or piezoelectric signal detection.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention concerne une construction simple et économique, offrant une sécurité élevée contre les surcharges, pour un agencement de détection (10) destiné à détecter des hautes pressions. L'agencement de détection (10) comprend un élément détecteur micromécanique (11) qui est placé sur un support (1) et qui, à l'aide de ce support (1), est monté par exemple dans un boîtier. Sur la face supérieure de l'élément détecteur (11) est formée une membrane (12) qui surmonte une cavité (13) possédant une ouverture postérieure (14). Le support (1) possède une ouverture traversante (2) et est relié à la face inférieure de l'élément détecteur (11) de manière que l'ouverture traversante (2) débouche dans l'ouverture postérieure (14) de la cavité (13). Selon l'invention, il est formé dans la face postérieure de l'élément détecteur (11), un décrochement annulaire (15) qui est placé au-dessus de la zone marginale de l'ouverture traversante (2), si bien que la surface de liaison entre l'élément détecteur (11) et le support (1) ne va pas jusqu'au bord de l'ouverture traversante (2).
EP10701550A 2009-03-31 2010-02-01 Agencement de détection pour la détection de hautes pressions Withdrawn EP2414802A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009002004A DE102009002004A1 (de) 2009-03-31 2009-03-31 Sensoranordnung zum Erfassen von hohen Drücken
PCT/EP2010/051138 WO2010112246A1 (fr) 2009-03-31 2010-02-01 Agencement de détection pour la détection de hautes pressions

Publications (1)

Publication Number Publication Date
EP2414802A1 true EP2414802A1 (fr) 2012-02-08

Family

ID=42079137

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10701550A Withdrawn EP2414802A1 (fr) 2009-03-31 2010-02-01 Agencement de détection pour la détection de hautes pressions

Country Status (4)

Country Link
US (1) US20120073379A1 (fr)
EP (1) EP2414802A1 (fr)
DE (1) DE102009002004A1 (fr)
WO (1) WO2010112246A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008041943A1 (de) * 2008-09-10 2010-03-11 Robert Bosch Gmbh Sensoranordnung und Verfahren zur Herstellung einer Sensoranordnung
DE102008041942A1 (de) * 2008-09-10 2010-03-11 Robert Bosch Gmbh Sensoranordnung, Verfahren zum Betrieb einer Sensoranordnung und Verfahren zur Herstellung einer Sensoranordnung
FI125960B (en) 2013-05-28 2016-04-29 Murata Manufacturing Co Improved pressure gauge box
DE102022211792A1 (de) 2022-11-08 2024-05-08 Robert Bosch Gesellschaft mit beschränkter Haftung Sensoranordnung

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0254137A (ja) * 1988-08-17 1990-02-23 Toshiba Corp 半導体圧力センサー
US5939637A (en) * 1997-12-05 1999-08-17 Delco Electronics Corp. Three-piece pressure sensor with high pressure stainless steel sensor element
JPH11201846A (ja) * 1998-01-12 1999-07-30 Mitsubishi Electric Corp 半導体圧力検出装置
JP2002039892A (ja) * 2000-07-28 2002-02-06 Matsushita Electric Works Ltd 半導体圧力センサとその製造方法
US6584851B2 (en) * 2000-11-30 2003-07-01 Nagano Keiki Co., Ltd. Fluid pressure sensor having a pressure port
US6619129B2 (en) * 2002-02-15 2003-09-16 Delphi Technologies, Inc. Three-piece pressure sensor with high pressure stainless steel sensing element
US7055392B2 (en) * 2003-07-04 2006-06-06 Robert Bosch Gmbh Micromechanical pressure sensor
JP4774678B2 (ja) * 2003-08-29 2011-09-14 富士電機株式会社 圧力センサ装置
DE102004006199B4 (de) 2004-02-09 2015-09-03 Robert Bosch Gmbh Mikromechanischer Drucksensor für hohe Drücke
JP4839648B2 (ja) * 2005-03-23 2011-12-21 富士電機株式会社 圧力センサ装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2010112246A1 *

Also Published As

Publication number Publication date
US20120073379A1 (en) 2012-03-29
DE102009002004A1 (de) 2010-10-07
WO2010112246A1 (fr) 2010-10-07

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