EP2402779A1 - Hall sensor system - Google Patents
Hall sensor system Download PDFInfo
- Publication number
- EP2402779A1 EP2402779A1 EP10168375A EP10168375A EP2402779A1 EP 2402779 A1 EP2402779 A1 EP 2402779A1 EP 10168375 A EP10168375 A EP 10168375A EP 10168375 A EP10168375 A EP 10168375A EP 2402779 A1 EP2402779 A1 EP 2402779A1
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- EP
- European Patent Office
- Prior art keywords
- sensor system
- integrated circuit
- hall sensor
- elementary
- hall
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000009987 spinning Methods 0.000 claims description 6
- 239000000872 buffer Substances 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005355 Hall effect Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0005—Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
- G01R33/072—Constructional adaptation of the sensor to specific applications
- G01R33/075—Hall devices configured for spinning current measurements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
Definitions
- the array comprises a Differential Difference Amplifier (DDA) topology (see reference [5] for a description of DDA design), offering flexibility in choosing the number of differential pairs 8 connected to common signal connections In, Ip of the DDA as illustrated in figure 2 .
- the number of differential pairs can be increased by connecting other differential pairs in parallel to the common signal connections In, Ip.
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
Integrated circuit Hall sensor system comprising a plurality of elementary blocks (EB), each elementary block including a Hall cell (4), a differential pair (8) of an input stage of a Differential Difference Amplifier (DDA), and terminals (12a, 12b), wherein the terminals (12a, 12b) are placed laterally on opposing outer sides of each elementary block parallel to a Y axis and the plurality of elementary blocks are arranged in a juxtaposed manner to form at least one row (6a, 6b) extending along an X axis orthogonal to the Y axis and interconnected by the terminals.
Description
- The present invention relates to a Hall sensor system for magnetic field sensing applications or for current sensing applications.
- For numerous applications, Hall effect sensors integrated in silicon circuits are preferred over other magnetic field sensors because they can be entirely fabricated by a standard CMOS or other integrated circuit manufacturing processes that are economical for large series production. A drawback of conventional integrated Hall effect devices however is that they have a relatively large residual offset i.e. residual voltage at zero magnetic field. What limits the residual offset is the device non-linearity due to the dependence of local resistance in the Hall sensor on the current density. According to the reverse field reciprocity principle [3], the spinning current method would cancel the offset in a linear system. As the system becomes non-linear, the efficiency of the spinning current method decreases, and therefore a residual offset remains. A major cause of non-linearity is either the junction field effect [4] or the carrier velocity saturation, depending on the device geometry. In both cases the non-linearity increases with the device bias voltage. Techniques such as spinning current [1] or orthogonal coupling are known to reduce the offset down to the 100 µT range.
- In order to gain an advantage over competing technologies, the offset of integrated Hall sensors should however be reduced further, for instance to the 10 µT range.
- An object of this invention is to provide a magnetic field sensor system that is accurate, and in particular has a low offset. It would be advantageous to provide a magnetic field sensor system that is economical to manufacture in large series.
- It would be advantageous to provide a magnetic field sensor that is compact and reliable.
- Objects of this invention have been achieved by providing the Hall sensor system according to
claim 1. - Disclosed herein is an integrated circuit Hall sensor system comprising a plurality of elementary blocks (EB), each elementary block including a Hall cell, an input stage of an amplifier, and terminals, wherein the terminals are placed laterally on opposing outer sides of each elementary block and the plurality of elementary blocks are arranged in a juxtaposed manner to form at least one row interconnected by the terminals. Each elementary block may advantageously further include a current source, and a four phase switch box connected to the Hall cell.
- In an advantageous embodiment, the input stage may comprise or consist in a differential pair and the amplifier may comprise or consist in a Differential Difference Amplifier (DDA).
- The Hall cells in each row may be connected and configured to operate in parallel.
- In an advantageous embodiment, there are at least two rows of elementary blocks arranged in mirror image symmetry. Each row of elementary blocks may be terminated by a second stage of the amplifier to form a front-end channel. Each channel may further comprise a demodulator and an output buffer.
- Further objects and advantageous features of the invention will be apparent from the claims and the following detailed description of embodiments of the invention in relation to the annexed drawings in which:
-
Figure 1 is a graph showing typical residual offset as a function of the bias voltage applied on an integrated Hall cell; -
Figure 2 is a schematic diagram of a DDA topology with differential signal connections In, Ip according to a feature of an embodiment of the invention; -
Figure 3a and 3b illustrate an elementary block (EB) forming a building unit for distributed Hall cell array of a sensor system according to an embodiment of the invention, wherefigure 3a is a block diagram andfigure 3b a schematic circuit diagram -
Figure 4 is a floorplan of a two channel integrated Hall sensor system according to an embodiment of the invention; -
Figure 5 is a photograph of an example of an experimental setup of a Hall sensor system mounted on a PCB according to the invention ; -
Figure 6 is a graph of differential residual offset drift in temperature for the experimental setup offigure 5 , whereby the Hall cell bias current was swept from 100 uA to 600 uA, and a difference at the outputs of the front-end channel 1 andchannel 2 was measured for each temperature step. - In the design of an integrated Hall cell with low offset and offset drift, one objective is to keep the bias voltage low. Typical offset values, as function of the voltage applied on a cross-shaped CMOS integrated Hall cell are shown in
Fig. 1 , where the residual voltage is divided by the sensitivity to be expressed in magnetic field units. The residual offset was obtained after applying four-phase spinning current method at zero magnetic field.Figure 1 illustrates that it is important to keep the bias voltage low, however reducing the bias voltage degrades the signal-to-noise ratio because thermal noise then dominates. According to the invention, the signal-to-noise ratio is significantly improved by integrating an array of Hall cells, each one weakly biased. The array is advantageously scalable and easy to integrate without layout limitations. In a preferred embodiment, the array comprises a Differential Difference Amplifier (DDA) topology (see reference [5] for a description of DDA design), offering flexibility in choosing the number ofdifferential pairs 8 connected to common signal connections In, Ip of the DDA as illustrated infigure 2 . The number of differential pairs can be increased by connecting other differential pairs in parallel to the common signal connections In, Ip. - In an embodiment of the present invention, the differential sensing of the Hall voltage based on the DDA is preferred. Nevertheless, within the scope of the invention it is possible to adopt other amplification means, whereby the choice of the biasing method may affect the structure and performance of the first signal-amplifying stage. If an operational amplifier (OA) is used, the circuit for Hall bias current could for instance be rearranged according to [6] and corresponding input stage incorporated in the elementary block.
- For a simple Hall cell array realization, the number of differential pairs of the DDA can be arbitrarily increased and wired to Hall cells. However when reaching certain number of differential pairs, the floor plan becomes complicated. In addition, if all routing lines converge to an off-centered DDA block, the layout symmetry is broken. According to an advantageous aspect of the invention, each Hall cell is associated with a bias circuit and a part of an amplification stage that allows a parallel connection. These elements are part of an elementary block (EB), as shown in
figures 3a and 3b . - More precisely, the elementary block EB according to an advantageous embodiment of the invention comprises a Hall device 4, a switch box (also called spin box) 7, a
current source 5 and aninput stage 8 of an amplifier. In the embodiment illustrated, the input stage comprises adifferential pair 8 of a Differential Difference amplifier (DDA). The switchbox 7 is driven by logic signals from alogic circuit differential pair 8 advantageously converts the Hall sensing voltage to a current signal that is easy to read. The EB terminals 12 are placed laterally and symmetrically along a Y axis, to easily build up arow opposing terminals row stage row complete row DDA 2ndstage block - As depicted in
Fig. 4 , the front-end channel can be replicated by mirroring along an X axis, orthogonal to the Y axis, in order to realize tworows - Hence, the topology of the system is "distributed" and symmetrical with respect to one centre-line axis X. This architecture allows finding a good trade-off between offset reduction, sensitivity and current consumption. In the embodiment illustrated, the system is completed by
conditioning circuits - An experimental system in 0.35 um CMOS standard technology was built of 16 EB's, equally distributed in the central part of the layout as shown by the photograph of the chip in
Fig. 5 . The Hall signal was processed in a differential way and monitored in modulated form at the output of each DDA, or demodulated using switched capacitor technique with variable clock frequency, depending on the required signal bandwidth. The logic circuit was either driven by the internal clock: a 2.6 MHz RC relaxation oscillator with frequency dividers, or externally controlled. The circuit was tested from the kHz range up to 1.3 MHz of modulation frequency. The bias current of Hall cells can be externally controlled by a current source for testing purposes. The layout size was of 1.6 x 1.6 mm2. The third EB of the upper row is zoomed out and the Hall device location is schematized by a cross shape. The total current consumption depends on the value of the Hall cell bias current: when applying 500 uA on each Hall cell, the overall current consumption was of 25 mA at 3.3 V supply voltage. - To study the residual offset behavior and its origin in the system, the experimental setup was used where the temperature and the Hall cell bias current can be swept. A 6-layer permalloy magnetic shielding was used to protect the system from environmental noise and suppress the external magnetic field. The tests were performed on three randomly selected samples. The differential offset between the channels was monitored (this is the final offset of the system), but also the individual offset of each channel. The system sensitivity depends on Hall cell bias current, for instance with a 500 uA bias current per Hall cell, the measured overall sensitivity was 21 V/T.
- When realizing a low offset system it is important to know the offset origin in the system. For this purpose the modulated signal at the output of the DDA was monitored and demodulated with an external lock-in amplifier, synchronized by a logic signal coming from the system. A relatively low modulation frequency of 5 kHz was selected to neglect the settling time of the DDA and the spikes generated by switches. The Hall bias current was swept from 100 uA to 600 uA for each temperature step. Since the Hall voltage is modulated at the input of the DDA, the residual Hall offset can be separated from the DDA offset by the demodulation and extracted from the measurement. The offset drift was measured in a temperature range from -20 to 100°C.
Fig. 6 shows the differential offset drift for various Hall bias current measured on the experimental setup. For bias currents less than 200 uA, the offset drift is hidden by the noise. For Hall bias currents higher than 300 uA, the offset drift shows an increase similar to the behavior shown inFig. 1 , although at a much lower level. -
- [1] P. Munter, "A low -offset spinning-current Hall plate", Sensors and Actuators A: Physical, 21-23 (1990) 743-746
- [2] P. Ripka, "Magnetic Sensors and Magnetometers",
- [3] HH. Sample et al. "Reverse field reciprocity for conducting specimens in magnetic fields" J. Appl. Phys. 61, (1987) 1079
- [4] R.S. Popović, B. Hälg, "Nonlinearity in Hall devices and its compensation", Solid-State Electronics, Volume 31, Issue 12, December 1988, 1681-1688
- [5] H Alzaher, M Ismail, "A CMOS Fully Balanced Differential Difference Amplifier and Its Applications", IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—II: ANALOG AND DIGITAL SIGNAL PROCESSING, VOL. 48, NO. 6, JUNE 2001, pp. 614 - 620
- [6] R. S. Popovic, "Hall Effect Devices", the adam hilger series on sensors, ISBN: 0-7503-0096-5, 1991, pp. 187-188
Claims (12)
- Integrated circuit Hall sensor system comprising a plurality of elementary blocks (EB), each elementary block including a Hall cell (4), an input stage of an amplifier, and terminals (12a, 12b), wherein the terminals (12a, 12b) are placed laterally on opposing outer sides of each elementary block parallel to a Y axis and the plurality of elementary blocks are arranged in a juxtaposed manner to form at least one row (6a, 6b) extending along an X axis orthogonal to the Y axis and interconnected by the terminals.
- Integrated circuit Hall sensor system according to claim 1 wherein the input stage is a differential pair (8).
- Integrated circuit Hall sensor system according to claim 1 or 2 wherein the amplifier is a Differential Difference Amplifier (DDA).
- Integrated circuit Hall sensor system according to claim 1, 2, or 3 wherein each elementary block further includes a current source (5).
- Integrated circuit Hall sensor system according to any one of the preceding claims wherein each elementary block further includes a four phase switch box (7) connected to the Hall cell.
- Integrated circuit Hall sensor system according to any one of the preceding claims wherein the Hall cells (4) in said at least one row (6a, 6b) are connected and configured to operate in parallel.
- Integrated circuit Hall sensor system according to any one of the preceding claims wherein there are at least two said rows (6a, 6b) of elementary blocks arranged in mirror image symmetry about the X axis.
- Integrated circuit Hall sensor system according to any one of the preceding claims wherein each row (6a, 6b) of elementary blocks is terminated by a second stage (11 a, 11 b) of the DDA, forming a front-end channel.
- Integrated circuit Hall sensor system according to the preceding claim wherein the second stage (11a, 11b) of the DDA is configured to convert a current signal output of the elementary blocks into a voltage signal.
- Integrated circuit Hall sensor system according to claim 8 or 9 wherein each channel comprises a logic circuit (9a, 9b) connected through connections (A, B, C, D) of the elementary blocks configured to deliver logic signals to a four phase current spinbox of each elementary block connected to the Hall cell to perform four-phase spinning current on each Hall cell.
- Integrated circuit Hall sensor system according to claim 8, 9 or 10 wherein each channel comprises a demodulator (14a, 14b) based on a switched-capacitor circuit.
- Integrated circuit Hall sensor system according to claim 8, 9, 10 or 11 wherein each channel comprises an output buffer (16a, 16b).
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP10168375A EP2402779A1 (en) | 2010-07-02 | 2010-07-02 | Hall sensor system |
CN201180032157.7A CN102971639B (en) | 2010-07-02 | 2011-07-01 | Hall sensor systems |
US13/806,638 US9453892B2 (en) | 2010-07-02 | 2011-07-01 | Hall sensor system |
JP2013517645A JP6071876B2 (en) | 2010-07-02 | 2011-07-01 | Hall sensor system |
PCT/IB2011/052911 WO2012001662A1 (en) | 2010-07-02 | 2011-07-01 | Hall sensor system |
EP11738053.5A EP2588876B1 (en) | 2010-07-02 | 2011-07-01 | Hall sensor system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP10168375A EP2402779A1 (en) | 2010-07-02 | 2010-07-02 | Hall sensor system |
Publications (1)
Publication Number | Publication Date |
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EP2402779A1 true EP2402779A1 (en) | 2012-01-04 |
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Family Applications (2)
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EP10168375A Withdrawn EP2402779A1 (en) | 2010-07-02 | 2010-07-02 | Hall sensor system |
EP11738053.5A Not-in-force EP2588876B1 (en) | 2010-07-02 | 2011-07-01 | Hall sensor system |
Family Applications After (1)
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EP11738053.5A Not-in-force EP2588876B1 (en) | 2010-07-02 | 2011-07-01 | Hall sensor system |
Country Status (5)
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US (1) | US9453892B2 (en) |
EP (2) | EP2402779A1 (en) |
JP (1) | JP6071876B2 (en) |
CN (1) | CN102971639B (en) |
WO (1) | WO2012001662A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012011759A1 (en) * | 2012-06-13 | 2013-12-19 | Gerrit Ebbers | Method for measuring frequency of magnetic wave through Hall sensor, involves buffering output signal of Hall sensor by differential amplifier, and representing image of current magnetic field strength based on reference frequency |
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CN104502868A (en) * | 2014-12-29 | 2015-04-08 | 南京大学 | High-precision circuit model of cross-shaped Hall sensor |
US9746531B2 (en) * | 2015-03-05 | 2017-08-29 | Sii Semiconductor Corporation | Magnetic sensor circuit |
CN105180927B (en) * | 2015-09-29 | 2018-06-19 | 珠海创智科技有限公司 | Magnetic navigation sensor |
US9705436B2 (en) * | 2015-12-04 | 2017-07-11 | Texas Instruments Incorporated | Linear hall device based field oriented control motor drive system |
RU2624565C1 (en) * | 2016-02-11 | 2017-07-04 | федеральное государственное бюджетное образовательное учреждение высшего образования "Донской государственный технический университет" (ДГТУ) | Instrument amplifier for work at low temperatures |
CN107395194B (en) * | 2017-08-29 | 2023-04-25 | 桂林电子科技大学 | Capacitive sensor interface circuit based on frequency conversion |
CN112985246B (en) | 2021-01-25 | 2023-03-31 | 成都芯源系统有限公司 | Position sensing system and position sensing method |
US11761983B2 (en) * | 2021-09-13 | 2023-09-19 | Globalfoundries Singapore Pte. Ltd. | Probe card integrated with a hall sensor |
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2010
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-
2011
- 2011-07-01 EP EP11738053.5A patent/EP2588876B1/en not_active Not-in-force
- 2011-07-01 CN CN201180032157.7A patent/CN102971639B/en active Active
- 2011-07-01 US US13/806,638 patent/US9453892B2/en active Active
- 2011-07-01 WO PCT/IB2011/052911 patent/WO2012001662A1/en active Application Filing
- 2011-07-01 JP JP2013517645A patent/JP6071876B2/en active Active
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Title |
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H ALZAHER; M ISMAIL: "A CMOS Fully Balanced Differential Difference Amplifier and Its Applications", IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS-II: ANALOG AND DIGITAL SIGNAL PROCESSING, vol. 48, no. 6, June 2001 (2001-06-01), pages 614 - 620 |
HH. SAMPLE ET AL.: "Reverse field reciprocity for conducting specimens in magnetic fields", J. APPL. PHYS., vol. 61, 1987, pages 1079 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012011759A1 (en) * | 2012-06-13 | 2013-12-19 | Gerrit Ebbers | Method for measuring frequency of magnetic wave through Hall sensor, involves buffering output signal of Hall sensor by differential amplifier, and representing image of current magnetic field strength based on reference frequency |
Also Published As
Publication number | Publication date |
---|---|
EP2588876B1 (en) | 2015-02-11 |
JP2013535661A (en) | 2013-09-12 |
EP2588876A1 (en) | 2013-05-08 |
CN102971639A (en) | 2013-03-13 |
CN102971639B (en) | 2016-08-31 |
WO2012001662A1 (en) | 2012-01-05 |
JP6071876B2 (en) | 2017-02-01 |
US20130099782A1 (en) | 2013-04-25 |
US9453892B2 (en) | 2016-09-27 |
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