EP2376673B1 - Procede de realisation d'un depot de nanoparticules a adherence augmentee et dispositif pour la mise en uvre d'un tel procede - Google Patents

Procede de realisation d'un depot de nanoparticules a adherence augmentee et dispositif pour la mise en uvre d'un tel procede Download PDF

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Publication number
EP2376673B1
EP2376673B1 EP10700046.5A EP10700046A EP2376673B1 EP 2376673 B1 EP2376673 B1 EP 2376673B1 EP 10700046 A EP10700046 A EP 10700046A EP 2376673 B1 EP2376673 B1 EP 2376673B1
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EP
European Patent Office
Prior art keywords
particles
deposition
liquid
substrate
nanoparticles
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EP10700046.5A
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German (de)
English (en)
French (fr)
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EP2376673A1 (fr
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Hai Trieu Phan
Jean-Antoine Gruss
Olivier Poncelet
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder

Definitions

  • the present invention relates to a nanoparticle deposition process whose adhesion is improved, for example for the realization of thermal exchange surfaces with improved thermal performance.
  • Heat exchangers allow the transfer of heat between a surface, called the heat exchange surface, and a fluid. These often include unopened heat exchange structures, such as tubes or plates of complex shape, large and of various materials, such as metals, polymers or ceramics.
  • the fluid by evaporating on the surface, extracts the heat from the surface, the fluid is set in motion to evacuate the extracted heat.
  • the thermal resistance is proportional to the ratio 1 / hS, h being the heat exchange coefficient between the exchange wall and the fluid, and S being the area of the exchange surface.
  • h being the heat exchange coefficient between the exchange wall and the fluid
  • S being the area of the exchange surface.
  • the production of surfaces with good wettability can be obtained by depositing small particles on said surface, for example nanoscale particles, also called nanoparticles, these particles having good properties of wettability vis-à-vis the fluid used in the heat exchanger.
  • the deposition of such particles on a surface can be obtained by different methods.
  • a first type of method consists in depositing a thin film of particles on the surface.
  • a first method consists of depositing a so-called LANGMUIR-BLODGETT film on the surface, this film is composed of a monolayer or a plurality of layers of amphiphilic molecules, i.e. having a hydrophilic end and a hydrophobic end.
  • a drop of a solvent containing such molecules is introduced into a tray filled with ultrapure water.
  • the molecules are distributed in the form of a film on the surface of the water. After evaporation of the solvent, the hydrophilic end of the molecules is oriented towards the water and the hydrophobic end of the molecules is oriented away from the water surface.
  • MOCVD and PECVD only apply to substrates smaller than 25 cm in diameter. Indeed, it is difficult to control the homogeneity of the deposit on surfaces of large size.
  • This method can be applied to substrates of complex shape, however the nanoparticle film thus produced does not adhere sufficiently to the substrate, the film can be easily destroyed.
  • US2004086648 discloses a method of deposition of nanoscale particles under pressure conditions above atmospheric pressure and at elevated temperature. Unlike the invention, the deposition is carried out by chemical reaction between the solution and the surface.
  • Pressurizing the nanofluid has the effect of increasing the boiling temperature, which allows to increase the temperature at which the nanofluid can be heated, thus improving the adhesion of the deposit on the surface.
  • the deposition conditions are such that they allow deposition under a high boiling point above the standard boiling point. These temperatures, however, make it possible to deposit on polymer substrates.
  • the boiling temperature corresponds to the saturation temperature, this temperature depends on the pressure.
  • a pressure is applied to the nanofluid so that its boiling temperature is between 150 ° C and 200 ° C.
  • the duration of the deposition phase is greater than 10 minutes, considerably improving the homogeneity of the deposition of nanoparticles.
  • discrete zones of the substrate are heated in order to perform localized structuring and not total structuring of the substrate surface.
  • step c) is carried out by flowing the liquid along the surface, the flow of the liquid along the surface taking place at a low speed, for example less than or equal to 0.1 m / s
  • the pressure applied is between 5 bar and 10 bar, so as to have a fluid boiling temperature between 150 ° C and 200 ° C.
  • the concentration of particles in the liquid is, for example, between 0.01% and 1% by weight.
  • the deposited particles may be TiO 2 , SiO 2 , alpha-Al 2 O 3 , gamma-Al 2 O 3 , boehmite AlO (OH), gibbsite, Al (OH) 3 of ZrO 2 , HfO 2 , SnO 2 , Sb 2 O 5 , Ta 2 O 5 , Nb 2 O 5 , ZnO and / or silver, and the fluid is water or ethylene glycol .
  • the surface is heated at discrete areas.
  • the subject of the present invention is also a process for producing an exchange surface heat exchanger for a heat exchanger implementing the method according to the present invention, the deposited particles being particles with properties of good wettability vis-à-vis the heat exchange fluid to be implemented in the heat exchanger.
  • a first phase comprising steps a), b) and c), the particles being particles having a low wettability with respect to said fluid. heat exchange, so as to form a layer of low wettability particles between the substrate and the particle layer with good wettability.
  • a device adapted to perform the deposition of particles of nanometric size on at least a portion of the surface of a substrate comprises a first chamber intended to contain a liquid loaded with said particles of nanometric size to be deposited, the first chamber being under a pressure greater than the atmospheric pressure and comprising means for heating said liquid capable of bringing the liquid to its boiling point, a second chamber pressurized to a pressure substantially equal to that of the first chamber, inside which the deposition takes place said nanoparticles, heating means being provided for heating the at least a portion of the surface of the substrate to said boiling temperature, the first enclosure being connected to the second chamber to allow the supply of the second chamber with the liquid brought substantially to its boiling temperature, so that the liquid boils when it is in contact with said at least a portion of the heated surface .
  • the second enclosure is formed at least partially directly by the substrate, said substrate delimiting a channel with two open ends, the deposition taking place on at least a portion of the channel surface, and at least one end being intended to be connected to the first enclosure.
  • the device may comprise a second connection for returning the liquid in the first chamber after passing through the second chamber, so as to form a closed circuit, the entire circuit being pressurized.
  • the first and the second enclosure are combined.
  • the device according to the invention may comprise means for circulating the liquid at low speed along the surface of the substrate, for example a hydraulic pump.
  • the nanoparticle deposition process which will be described below can be used to make deposits on all types of objects having various functions.
  • An advantageous application of such surfaces is heat exchange, but the present invention is in no way limited to such an application.
  • nanoparticles the steps of the process according to the present invention applied to a substrate 2 provided with a surface 4 on which it is desired to deposit nanometer-sized particles 6, hereinafter referred to as nanoparticles, can be seen.
  • nanofluid 8 a liquid solution containing nanoparticles 6, hereinafter called nanofluid 8, is used.
  • This solution is brought into contact with the surface 4 of the substrate 2.
  • the nanofluid 8 is brought to a temperature close to its boiling point and advantageously slightly below its boiling point, the substrate 2 is also heated substantially above the boiling point.
  • the deposition under the highest possible boiling point it is desired to perform the deposition under the highest possible boiling point.
  • a liquid whose standard boiling temperature is high we choose a liquid whose standard boiling temperature is high, and secondly we put the nanofluid 8 under pressure, in order to increase the boiling temperature of the nanofluid 8, so that it is higher than its standard boiling point.
  • under pressure means, in the present application, under a pressure greater than atmospheric pressure.
  • the inventors have found that the adhesion of the deposited nanoparticle layer was increased by increasing the temperature at which the deposition took place.
  • the high temperature modifies the deposition structure performed with respect to the prior art and appreciably improves the adhesion of the nanoparticles to the surface 4.
  • the high temperature allows crystallization in situ and increases the forces van der Waals between the substrate and the nanoparticles.
  • the material of the nanoparticles is for example TiO 2 , SiO 2 or else alpha-Al 2 O 3 , gamma-Al 2 O 3 , boehmite AlO (OH), gibbsite Al (OH) 3), ZrO 2 , HfO 2 , SnO 2 , Sb 2 O 5 , Ta 2 O 5 , Nb 2 O 5 , ZnO and / or silver, and the liquid containing them may be, for example water or ethylene glycol.
  • the pressure of the nanofluid is such that the boiling temperature of the liquid is between 150 ° C and 200 ° C, the pressure is then between 5 bar and 10 bar.
  • the device 12 comprises a first chamber 14 in which the nanofluid 8 is intended to be boiled under pressure, the first chamber 14 is therefore equipped with heating means shown schematically and designated by the reference 16 and pressurizing means represented schematically and designated by the reference 18.
  • an agitation system 19 is provided in the first chamber 14 to ensure a substantially homogeneous concentration of nanofluid particles that will be injected to effect the deposition.
  • the device also comprises a second enclosure 20 in which the deposition takes place, a duct 21 is provided between the first enclosure 14 and the second enclosure 20 to bring the nanofluid substantially to its boiling point under pressure inside the enclosure.
  • second speaker 20 is provided between the first enclosure 14 and the second enclosure 20 to bring the nanofluid substantially to its boiling point under pressure inside the enclosure.
  • the solution comprising the nanoparticles "ready to be deposited” is introduced into the second chamber 20.
  • the nanoparticles were made beforehand and added to a solution to form the nanofluid.
  • the second chamber 20 is formed directly by the tube to be treated.
  • a pump 26 for bringing the nanofluid from the first enclosure 14 to the second enclosure 20 may be provided.
  • a duct 22 is also provided between the second enclosure 20 and the first enclosure 14 bringing the fluid from the tube to the enclosure 14.
  • the deposition device also comprises heating means 24 of the substrate in the second enclosure, in the particular case shown, the heating means are external to the first enclosure formed directly by the pipe to be covered.
  • These heating means 24 can be of any type, for example they can be electric, by electromagnetic coupling, indirectly by a heat exchanger by means of a fluid. It is even possible to arrange the tube, and more generally the substrate in an oven. Any other type of heating known to those skilled in the art is applicable.
  • the nanoparticle concentration of the fluid may be between 0.01% and 1% by weight.
  • the pressure within the first chamber 14 is between 5 bar and 10 bar and the boiling temperature is between 150 ° C and 200 ° C.
  • the heat flux applied to the tube is between 0.1 W / cm 2 and 100 W / cm 2 .
  • the nanofluid is heated to its boiling point T0 at 5 to 10 bars in the enclosure 14
  • the pressure within the first chamber 14 is between 5 bar and 10 bar and the boiling temperature is between 150 ° C and 200 ° C.
  • the heat flux applied to the tube is between 0.1 W / cm 2 and 100 W / cm 2 .
  • the nanofluid is heated to its boiling point T0 at 5 to 10 bars in the enclosure 14
  • the tube 2 is heated substantially to said boiling temperature Te.
  • the nanofluid When the nanofluid is at a temperature slightly below its boiling point, it is sent into the heated tube 2 by means of the pump 26.
  • the nanofluid is injected at a very low speed into the tube to ensure a constant concentration of the fluid inside the tube over its entire length and therefore a more homogeneous deposition all along the tube.
  • the flow velocity of the nanofluid is of the order of 0.1 m / s. This circulation has the advantage of ensuring the evacuation of the steam bubbles generated within the nanofluid.
  • the nanofluid is circulated for a long time, advantageously at least 10 min to improve the homogeneity of the deposited layer. Indeed, it was found that the longer the deposition time, the more the deposited layer had a homogeneous structure.
  • the device operates in closed loop, the nanofluid after passing through the tube is returned to the chamber, to be then reinjected into the tube. In the chamber, the nanofluid is heated again. It can be expected to recharge the fluid into nanoparticles.
  • the closed-loop operation makes it possible to carry out a completely pressurized installation, which simplifies its implementation, in particular with regard to the seals. But it is understood that a device with an open circuit and usable.
  • nanoparticle deposits that have good wettability properties with respect to the fluid that will be used in the heat exchanger.
  • the fluid used is water
  • the nanoparticles have hydrophilic properties.
  • the expression "nanoparticles having good properties of wettability with respect to a fluid” means that the material, of which the nanoparticles are composed, forming a flat surface, itself offers good wetting properties vis-à-vis a fluid.
  • -vis fluid ie the contact angle between the outer edge of a drop of fluid and the flat surface is less than 90 °.
  • the surface is said to be hydrophilic.
  • the low wettability means that the contact angle between a drop of fluid and the flat surface is greater than 90 ° covering the first layer 28 of very wetting nanoparticles.
  • a first hydrophobic layer 28 deposited on the substrate and a second hydrophilic layer 30 deposited on the first layer 28 are produced.
  • the steam seeds 27 appear with less energy because of the hydrophobic layer 28, while offering excellent properties of very wetting surfaces thanks to the hydrophilic layer 30.
  • the hydrophilic layer 30 facilitates the detachment of the vapor bubbles 9 and rewetting the surface.
  • This structuring therefore makes it possible to have an energy for initiating the lower nucleation than in the case of structuring obtained solely with the aid of wetting nanoparticles.
  • FIGS 4A to 4D are schematic representations of different shapes of parts of which part of the surfaces can be treated by the method according to the present invention. It can be seen that complex-shaped, closed-type surfaces can be simply structured by the present invention.
  • FIG. 4A it is a plane substrate provided with a plane surface 102.
  • the substrate 202 in the form of a truncated pyramid with a hollow square base.
  • the substrate 302 is in the form of a balloon-type container provided with an orifice.
  • the arrows Q symbolize the heat flux to which the substrate is subjected in view of the deposit.
  • the parts delimiting a channel, whose surface is intended to be structured are particularly suitable for deposition according to the device of the invention. figure 1 .
  • the device In the case of an open-form substrate, the device has a second chamber separate from the substrate, the latter being disposed in the second enclosure. In this case, structuring will take place on all surfaces of the substrate accessible to the nanofluid.
  • a deposition device comprising a single pressurized enclosure in which the nanofluid is heated to its boiling point and in which the substrate is immersed and heated is also conceivable.
  • the deposition of nanoparticles takes place on all surfaces of the substrate accessible to the nanofluid.
  • the device of the figure 2 is particularly suitable for structuring closed surfaces and has the advantage of structuring substrates of any size, since these are not limited by the size of an installation in which the substrate should be introduced.
  • PC polycarbonate
  • PEEK Polyetheretherketone
  • PEI Polyetherimide
  • PSU Polysulfone
  • PPSU Polyphenylsulfone
  • PA Polyamide
  • POM Polyoxymethylene
  • PBI Polybenzimidazole
  • PPS Polyphenyl Sulfide
  • the method according to the invention makes it possible to make deposits faster and more homogeneous than in the case of deposition at atmospheric pressure.
  • the deposit obtained by virtue of the invention is porous, which has the effect of increasing the specific surface area, which is favorable for rewetting in the case of a heat exchanger.
  • the porosity of the deposit is between 25% and 80%, and advantageously of the order of 40%.
  • the porosity of the deposit obtained according to the invention is also favorable in the case, for example of nanoparticles used as catalyst.
  • Catalyst nanoparticles such as Pd, Pt, Ni, CeO can be used or the support can be made in nanoporous form for depositing catalyst particles.
  • the surface of the substrate comprises zones 32 that it is desired to cover with a layer of nanoparticles and zones 34 that it is desired not to cover nanoparticles. For this, it is sufficient to heat only areas 32 where it is desired to perform a deposition of nanoparticles.
  • Heat flux Q is then applied to zones 32 while circulating the boiling nanofluid on both the heated zones 32 and the unheated zones 34. The deposition is then carried out locally at the heated zones 32 .
  • the tests consisted in carrying out deposits of nanoparticles on a surface heated from a drop of nanofluid. In this case, it is SiO 2 in water.
  • the substrate is aluminum. Deposits at three substrate and nanofluid heating temperatures were conducted at 80 ° C, 110 ° C and 175 ° C.
  • the nanoparticles are deposited on the surface of the substrate. Abrasion of a part of the surface is then carried out by means of a device called the "Taber 5750®".
  • the adhesion of the deposited particles was measured by measuring the profile of the abraded and unabraded surfaces by means of a profilometer, the percentage of particles removed by abrasion for each temperature is collated in the table below: Deposit temperature Percentages of particles removed by abrasion 80 ° C 75% 110 ° C 50% 175 ° C 33%
  • the deposition process according to the present invention is particularly suitable for the production of two-phase heat exchangers, two-phase thermosyphons, heat pipes and for carrying out hydrophilic or hydrophobic surface treatments.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
EP10700046.5A 2009-01-06 2010-01-05 Procede de realisation d'un depot de nanoparticules a adherence augmentee et dispositif pour la mise en uvre d'un tel procede Active EP2376673B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0950036A FR2940766B1 (fr) 2009-01-06 2009-01-06 Procede de realisation d'un depot de nanoparticules a adherence augmentee et dispositif pour la mise en oeuvre d'un tel procede
PCT/EP2010/050022 WO2010079154A1 (fr) 2009-01-06 2010-01-05 Procede de realisation d'un depot de nanoparticules a adherence augmentee et dispositif pour la mise en œuvre d'un tel procede

Publications (2)

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EP2376673A1 EP2376673A1 (fr) 2011-10-19
EP2376673B1 true EP2376673B1 (fr) 2016-12-07

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EP10700046.5A Active EP2376673B1 (fr) 2009-01-06 2010-01-05 Procede de realisation d'un depot de nanoparticules a adherence augmentee et dispositif pour la mise en uvre d'un tel procede

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US (1) US20110305838A1 (zh)
EP (1) EP2376673B1 (zh)
JP (1) JP2012514689A (zh)
CN (1) CN102325923A (zh)
FR (1) FR2940766B1 (zh)
WO (1) WO2010079154A1 (zh)

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Publication number Priority date Publication date Assignee Title
US10327338B2 (en) * 2016-06-17 2019-06-18 Nanoshield Technology Co., Ltd. Method for coating a device and devices having nanofilm thereon
WO2024014380A1 (ja) * 2022-07-11 2024-01-18 京セラ株式会社 金属フィルムおよび電子部品

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JPS6183895A (ja) * 1984-09-28 1986-04-28 Hitachi Ltd 伝熱面およびその製造方法
US6915964B2 (en) * 2001-04-24 2005-07-12 Innovative Technology, Inc. System and process for solid-state deposition and consolidation of high velocity powder particles using thermal plastic deformation
US20040086648A1 (en) * 2002-10-30 2004-05-06 Xiangyang Zhou Hydrothermal deposition of thin and adherent metal oxide coatings for high temperature corrosion protection
US20060093746A1 (en) * 2004-11-04 2006-05-04 Tokyo Electron Limited Method and apparatus for atomic layer deposition
JP2009518167A (ja) * 2005-12-11 2009-05-07 エスセーエフ テクノロジーズ アクティーゼルスカブ ナノサイズ材料の製造
JP5176205B2 (ja) * 2008-04-30 2013-04-03 ハリマ化成株式会社 多層配線基板の製造方法

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Publication number Publication date
FR2940766B1 (fr) 2011-05-27
EP2376673A1 (fr) 2011-10-19
FR2940766A1 (fr) 2010-07-09
US20110305838A1 (en) 2011-12-15
JP2012514689A (ja) 2012-06-28
WO2010079154A1 (fr) 2010-07-15
CN102325923A (zh) 2012-01-18

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