EP2342555A1 - Device and method for detecting a substance using a thin film resonator (fbar) having an insulating layer - Google Patents

Device and method for detecting a substance using a thin film resonator (fbar) having an insulating layer

Info

Publication number
EP2342555A1
EP2342555A1 EP09783557A EP09783557A EP2342555A1 EP 2342555 A1 EP2342555 A1 EP 2342555A1 EP 09783557 A EP09783557 A EP 09783557A EP 09783557 A EP09783557 A EP 09783557A EP 2342555 A1 EP2342555 A1 EP 2342555A1
Authority
EP
European Patent Office
Prior art keywords
layer
piezoelectric layer
substance
film resonator
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP09783557A
Other languages
German (de)
French (fr)
Other versions
EP2342555B1 (en
Inventor
Thomas Huber
Martin Nirschl
Dana Pitzer
Matthias Schreiter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP2342555A1 publication Critical patent/EP2342555A1/en
Application granted granted Critical
Publication of EP2342555B1 publication Critical patent/EP2342555B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/02—Analysing fluids
    • G01N29/036—Analysing fluids by measuring frequency or resonance of acoustic waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/02—Analysing fluids
    • G01N29/022—Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/02—Indexing codes associated with the analysed material
    • G01N2291/025—Change of phase or condition
    • G01N2291/0255—(Bio)chemical reactions, e.g. on biosensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/02—Indexing codes associated with the analysed material
    • G01N2291/025—Change of phase or condition
    • G01N2291/0256—Adsorption, desorption, surface mass change, e.g. on biosensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/04—Wave modes and trajectories
    • G01N2291/042—Wave modes
    • G01N2291/0426—Bulk waves, e.g. quartz crystal microbalance, torsional waves

Definitions

  • the invention relates to a device for detecting at least one substance of a fluid, comprising a piezoelectric thin-film resonator having at least one piezoelectric layer, an electrode layer arranged on the piezoelectric layer, at least one further electrode layer arranged on the piezoelectric layer and at least one attachment surface for attaching the substance of the fluid , wherein the piezoelectric layer, the electrode layers and the abutment surface are designed and arranged such that an excitation alternating field can be coupled into the piezoelectric layer by electrical control of the electrode layers, the thin film resonator due to a coupled into the piezoelectric layer excitation alternating field to a resonant oscillation with a resonant frequency f R can be excited and the resonant frequency f R of an attached to the attachment surface amount of the substance a is pending.
  • a method for detecting a substance using the device is given.
  • the known device has, for example, a thin-film resonator in which the electrode layer, the piezoelectric layer and the further electrode layer are stacked on top of one another in layers.
  • the piezoelectric layer is made of, for example, zinc oxide.
  • the upper electrode layer (top electrode) is made of gold and has the attachment surface for attachment (eg adsorption) of the substance of the fluid.
  • the thin-film resonator is applied to a silicon substrate via the lower electrode layer (bottom electrode). For the acoustic decoupling of the silicon substrate and the thin-film resonator from one another, an acoustic signal is interposed therebetween, for example. shear mirror of ⁇ / 4-thick layers of different acoustic impedance arranged.
  • the object of the present invention is to develop the known device for detecting a substance in such a way that a mass sensitivity is increased.
  • an apparatus for detecting at least one substance of a fluid comprising a piezoacoustic thin-film resonator with at least one piezoelectric layer, an electrode layer arranged on the piezoelectric layer, at least one further electrode layer arranged on the piezoelectric layer and at least one abutment surface for attaching the Substance of the fluid, wherein the piezoelectric layer, the electrode layers and the abutment surface are configured and arranged such that an excitation alternating field can be coupled into the piezoelectric layer by an electrical control of the electrode layers, the thin film resonator due to a coupled into the piezoelectric layer excitation alternating field to a Resonant vibration with a resonant frequency f R is excitable and the resonant frequency f R of an attached to the attachment surface amount d he is substance dependent.
  • the device is characterized in that at least one electrical insulation layer for electrically insulating the electrode layer is arranged directly on a side of at least one of the electrode layers facing away from the piezoelectric layer.
  • the insulating layer is preferably designed such that the fluid and the thin-film resonator are completely separated from each other.
  • a method for the detection of at least one substance of a fluid using the device is also specified with the following method steps: a) bringing the attachment surface and the fluid together in such a way that the substance is deposited on the attachment surface can and b) determining the resonant frequency of the thin-film resonator.
  • the thin-film resonator has, for example, a layer structure comprising a lower electrode layer, a piezoelectric layer and an upper electrode layer.
  • the electrode layers are arranged on different sides of the piezoelectric layer. It is also conceivable that the electrode layers are arranged on one side of the piezoelectric layer.
  • the electrical control of the electrode layers of the thin-film resonator can be excited to thickness vibrations.
  • the piezoelectric layer such that it can be excited to shear thickness vibrations due to the activation of the electrode layers.
  • the resonant frequency f R is chosen from the range of 500 MHz to 10 GHz inclusive.
  • the layer thickness of the piezoelectric layer is selected from the range of 0.1 ⁇ m to 20 ⁇ m inclusive.
  • the piezoelectric layer is made of, for example, zinc oxide. Another suitable material is aluminum nitride, for example.
  • the electrode layers preferably have layer thicknesses of less than 1 ⁇ m (for example 10 nm). Larger layer thicknesses of up to a few microns are also conceivable.
  • the insulating layer comprises inorganic insulating material.
  • the insulation material can be arbitrary.
  • the inorganic insulating material has at least one chemical compound selected from the group consisting of metal nitride and metal oxide.
  • the insulating material is alumina (Al 2 O 3 ) or silicon nitride (Si 3 N 4 ).
  • the metal oxide is silicon dioxide (SiO 2 ). Silicon dioxide is characterized by a good electrical insulation Because of its low acoustic impedance, it is particularly suitable for use with the thin-film resonator.
  • the electrode layers are preferably made of aluminum.
  • the electrode layer, on which the insulation layer is arranged comprises aluminum.
  • Aluminum as electrode material is particularly suitable for thin-film resonators. Aluminum has a low electrical resistance. This minimizes resistance noise. Essential is also a low acoustic impedance. This leads to a relatively high mass sensitivity. Likewise the low mass density of aluminum. In addition, aluminum is characterized by a high acoustic speed. As a result, phase components in the corresponding material are kept low.
  • the thin-film resonator can be applied to any substrate (carrier).
  • the thin film resonator is disposed on a semiconductor substrate.
  • a readout circuit may be integrated. This is done for example by means of CMOS (Complementary Metal Oxide Semiconductor) technology.
  • CMOS Complementary Metal Oxide Semiconductor
  • SMD Surface Mounted Device
  • the abutment surface is formed in a particular embodiment of the insulating layer. This means that the insulation layer carries a bio-functionalization. According to a particular embodiment, however, the abutment surface is formed by a chemically sensitive coating applied to the insulating layer.
  • the chemically sensitive coating may be, for example, a plastic coating. In particular, the chemically sensitive
  • the chemically sensitive coating is gold.
  • a chemically sensitive gold coating is particularly suitable for bio-functionalization.
  • the chemically sensitive coating is applied to the insulation layer.
  • the chemically sensitive coating itself also contributes to the resonant frequency of the thin-film resonator.
  • the chemically sensitive coating in the case of gold is due to the relatively high mass density in terms of the highest possible mass sensitivity a minimum layer thickness of advantage.
  • the chemically sensitive coating has a layer thickness in the range of 5 nm to 30 nm. These layer thicknesses are completely sufficient to achieve the necessary bio-functionalization.
  • a high mass sensitivity is achieved due to the low mass of the chemically sensitive coating.
  • the basis for this is a very high resonant frequency of the thin-film resonator. With suitable materials and layer thicknesses, resonance frequencies of from the range of inclusive 500 MHz up to and including 10 GHz can be achieved.
  • the device can be used for the analysis of gases or gas mixtures.
  • the device is used for the detection of biomolecules in liquids.
  • the invention provides the following special advantages:
  • the device for detecting a substance of a fluid can be constructed very flexible.
  • the thin film resonator of the device is either on a wafer (eg half conductor material) or a CMOS readout electronics or on a CMOS readout electronics, which is separated via an insulating layer (for example, SiO 2 ) from the thin-film resonator.
  • Aluminum is also characterized by a high CMOS compatibility. This simplifies integration with CMOS circuits. Gold would be less suitable for this because it is difficult to compatible with CMOS circuits. In addition, it is characterized by a relatively high mass density. This leads to a relatively low mass sensitivity.
  • the temperature coefficient of the resonance frequency decreases, ie the stability of the resonant frequency of the thin-film resonator with respect to temperature fluctuations is increased.
  • the surface is smoothed. This causes a reduction in the acoustic losses, especially when used in water.
  • the combination of aluminum electrode layer and silicon dioxide insulating layer is advantageous.
  • the acoustic losses of aluminum and silicon dioxide are lower than, for example, gold. It results so that increased by about three times the mass sensitivity.
  • the piezoelectric layer can be made thicker at the same resonant frequency. As a result, there are higher phase components in the piezoelectric layer. This increases the effective piezoelectric coupling coefficient.
  • the electrical capacitance of the thin film resonator is reduced, which is advantageous for many readout circuits.
  • FIGS. 1 to 4 each show an embodiment of the device for detecting a substance of a fluid in a lateral cross-section.
  • the device for detecting a substance of a fluid is a biosensor for detecting biomolecules.
  • the biomolecules are parts of a DNA. Alternatively, biomolecules are detected in the form of proteins.
  • An essential component of the device 1 for detecting a substance of a fluid 2 is a piezoacoustic thin-film resonator 10 with stacked piezoelectric layer 11, top electrode 12 and further bottom electrode 13.
  • the piezoelectric layer is made of zinc oxide.
  • a layer thickness of the zinc oxide layer is about 0.5 ⁇ m.
  • the upper electrode layer is made of aluminum and about 100 nm thick.
  • the bottom electrode layer is about 890 nm thick.
  • a lateral extent of the thin film resonator is about 200 ⁇ m.
  • the thin film resonator is mounted on an acoustic mirror 6 of ⁇ / 4-thick layers of different acoustic impedance of a silicon substrate 5.
  • an electrical insulation layer 4 for electrically insulating the electrode layer 12 is arranged.
  • the insulating layer is about 100 nm thick and consists of silicon dioxide as an inorganic insulating material.
  • the inorganic insulating material is silicon nitride.
  • the insulation layer is applied by means of a CVD (Chemical Vacuum Deposition) method.
  • a chemically sensitive coating 7 made of gold is applied to the insulation layer (FIG. 1).
  • the coating has a functionalization for the biomolecules.
  • the biomolecules can be attached to the attachment surface.
  • the thin-film resonator is arranged via a readout circuit 8 integrated in the substrate 5 in CMOS technology.
  • a readout circuit 8 integrated in the substrate 5 in CMOS technology.
  • an insulating layer 81 is present between the acoustic mirror 5 and the readout circuit 8. This insulation layer consists of silicon dioxide.
  • the electrical contacts 82 of the readout circuit for electrical control is connected to the electrode layers of the thin-film resonator.
  • the thin-film resonator is not arranged over a read-out circuit integrated in the silicon substrate (FIG. 3).
  • An acoustic decoupling of the thin-film resonator and the substrate takes place directly via the acoustic mirror.
  • An unillustrated readout circuit is either integrated at a different location of the semiconductor substrate, or implemented as an external component. Via the contacts 83, this readout circuit is electrically connected to the electrode layers of the thin-film resonator.
  • Example 1 This embodiment is derived from Example 1.
  • the insulation layer 4 forms the attachment surface.
  • the isolation layer has the biofunctionalization necessary for the incorporation of the biomolecules.

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

The invention relates to a device for detecting at least one substance of a fluid, comprising a piezoacoustic thin film resonator having at least one piezoelectric layer, an electrode layer arranged on the piezoelectric layer, at least one further electrode layer arranged on the piezoelectric layer, and at least one adsorption surface for adsorbing the substance of the fluid, wherein the piezoelectric layer, the electrode layers, and the adsorption surface are designed and arranged on each other in such a way that by electrically activating the electrode layers, an excitation alternating field can be coupled into the piezoelectric layer, the thin film resonator can be excited to a resonance oscillation at a resonance frequency fR because of an excitation alternating field coupled into the piezoelectric layer, and the resonance frequency fR depends on an amount of the substance adsorbed on the adsorption surface. The device is characterized in that at least one electrical insulating layer for electrically insulating the electrode layer is arranged directly on a side of at least one of the electrode layers facing away from the piezoelectric layer. Particularly advantageous is the combination of an electrode layer made of aluminum and an insulating layer made of silicon dioxide. A relatively high mass sensitivity thus results. The device is used particularly as a biosensor for detecting and analyzing biomolecules.

Description

VORRICHTUNG UND VERFAHREN ZUR DETEKTION EINER SUBSTANZ MIT HILFE EINES DÜNNFILMRESONATORS ( FBAR) MIT ISOLATIONSSCHICHT DEVICE AND METHOD FOR DETECTING A SUBSTANCE THROUGH THE AID OF A THIN FILM RESONATOR (FBAR) WITH INSULATION LAYER
Die Erfindung betrifft eine Vorrichtung zur Detektion mindestens einer Substanz eines Fluids, aufweisend einen piezoelektrischen Dünnfilmresonator mit mindestens einer piezoelektrischen Schicht, einer an der piezoelektrischen Schicht angeordneten Elektrodenschicht, mindestens einer an der piezoelektrischen Schicht angeordneten weiteren Elektrodenschicht und mindestens eine Anlagerungsfläche zum Anlagern der Substanz des Fluids, wobei die piezoelektrische Schicht, die Elektrodenschichten und die Anlagerungsfläche derart aus- gestaltet und aneinander angeordnet sind, dass durch eine elektrische Ansteuerung der Elektrodenschichten ein Anregungswechselfeld in die piezoelektrische Schicht eingekoppelt werden kann, der Dünnfilmresonator aufgrund eines in die piezoelektrische Schicht eingekoppelten Anregungswechselfeldes zu einer Resonanzschwingung mit einer Resonanzfrequenz fR anregbar ist und die Resonanzfrequenz fR von einer an der Anlagerungsfläche angelagerten Menge der Substanz abhängig ist. Neben der Vorrichtung wird ein Verfahren zur Detektion einer Substanz unter Verwendung der Vorrichtung angegeben.The invention relates to a device for detecting at least one substance of a fluid, comprising a piezoelectric thin-film resonator having at least one piezoelectric layer, an electrode layer arranged on the piezoelectric layer, at least one further electrode layer arranged on the piezoelectric layer and at least one attachment surface for attaching the substance of the fluid , wherein the piezoelectric layer, the electrode layers and the abutment surface are designed and arranged such that an excitation alternating field can be coupled into the piezoelectric layer by electrical control of the electrode layers, the thin film resonator due to a coupled into the piezoelectric layer excitation alternating field to a resonant oscillation with a resonant frequency f R can be excited and the resonant frequency f R of an attached to the attachment surface amount of the substance a is pending. In addition to the device, a method for detecting a substance using the device is given.
Eine Vorrichtung der eingangs genannten Art geht beispielsweise aus der DE 103 08 975 B4 hervor. Die bekannte Vorrichtung weist beispielsweise einen Dünnfilmresonator auf, bei dem die Elektrodenschicht, die piezoelektrische Schicht und die weitere Elektrodenschicht schichtförmig übereinander gestapelt sind. Die piezoelektrische Schicht besteht beispielsweise aus Zinkoxid. Die obere Elektrodenschicht (top electro- de) ist aus Gold und weist die Anlagerungsfläche zur Anlagerung (z.B. Adsorption) der Substanz des Fluids auf. Über die untere Elektrodenschicht (bottom electrode) ist der Dünnfilmresonator auf einem Siliziumsubstrat aufgebracht. Zur akustischen Entkopplung des Siliziumsubstrats und des Dünnfilmresonators voneinander ist dazwischen beispielsweise ein akusti- scher Spiegel aus λ/4-dicken Schichten unterschiedlicher akustischer Impedanz angeordnet.A device of the type mentioned, for example, from DE 103 08 975 B4. The known device has, for example, a thin-film resonator in which the electrode layer, the piezoelectric layer and the further electrode layer are stacked on top of one another in layers. The piezoelectric layer is made of, for example, zinc oxide. The upper electrode layer (top electrode) is made of gold and has the attachment surface for attachment (eg adsorption) of the substance of the fluid. The thin-film resonator is applied to a silicon substrate via the lower electrode layer (bottom electrode). For the acoustic decoupling of the silicon substrate and the thin-film resonator from one another, an acoustic signal is interposed therebetween, for example. shear mirror of λ / 4-thick layers of different acoustic impedance arranged.
Aufgabe der vorliegenden Erfindung ist es, die bekannte Vor- richtung zur Detektion einer Substanz derart weiterzubilden, dass eine Massensensitivität gesteigert wird.The object of the present invention is to develop the known device for detecting a substance in such a way that a mass sensitivity is increased.
Zur Lösung der Aufgabe wird eine Vorrichtung zur Detektion mindestens einer Substanz eines Fluids angegeben, aufweisend einen piezoakustischen Dünnfilmresonator mit mindestens einer piezoelektrischen Schicht, einer an der piezoelektrischen Schicht angeordneten Elektrodenschicht, mindestens einer an der piezoelektrischen Schicht angeordneten weiteren Elektrodenschicht und mindestens eine Anlagerungsfläche zum Anlagern der Substanz des Fluids, wobei die piezoelektrische Schicht, die Elektrodenschichten und die Anlagerungsfläche derart ausgestaltet und aneinander angeordnet sind, dass durch eine elektrische Ansteuerung der Elektrodenschichten ein Anregungswechselfeld in die piezoelektrische Schicht eingekoppelt werden kann, der Dünnfilmresonator aufgrund eines in die piezoelektrische Schicht eingekoppelten Anregungswechselfeldes zu einer Resonanzschwingung mit einer Resonanzfrequenz fR anregbar ist und die Resonanzfrequenz fR von einer an der Anlagerungsfläche angelagerten Menge der Substanz abhängig ist. Die Vorrichtung ist dadurch gekennzeichnet, dass unmittelbar auf einer der piezoelektrischen Schicht abgekehrten Seite mindestens einer der Elektrodenschichten mindestens eine elektrische Isolationsschicht zur elektrischen Isolierung der Elektrodenschicht angeordnet ist. Die Isolationsschicht ist dabei vorzugsweise derart ausgestaltet, dass das Fluid und der Dünnfilmresonator vollständig voneinander getrennt sind.To achieve the object, an apparatus for detecting at least one substance of a fluid is provided, comprising a piezoacoustic thin-film resonator with at least one piezoelectric layer, an electrode layer arranged on the piezoelectric layer, at least one further electrode layer arranged on the piezoelectric layer and at least one abutment surface for attaching the Substance of the fluid, wherein the piezoelectric layer, the electrode layers and the abutment surface are configured and arranged such that an excitation alternating field can be coupled into the piezoelectric layer by an electrical control of the electrode layers, the thin film resonator due to a coupled into the piezoelectric layer excitation alternating field to a Resonant vibration with a resonant frequency f R is excitable and the resonant frequency f R of an attached to the attachment surface amount d he is substance dependent. The device is characterized in that at least one electrical insulation layer for electrically insulating the electrode layer is arranged directly on a side of at least one of the electrode layers facing away from the piezoelectric layer. The insulating layer is preferably designed such that the fluid and the thin-film resonator are completely separated from each other.
Zur Lösung der Aufgabe wird auch ein Verfahren zur Detektion mindestens einer Substanz eines Fluids unter Verwendung der Vorrichtung mit folgenden Verfahrensschritten angegeben: a) Zusammenbringen der Anlagerungsfläche und des Fluids derart, dass die Substanz an der Anlagerungsfläche angelagert werden kann und b) Bestimmen der Resonanzfrequenz des Dünnfilmresonators .To achieve the object, a method for the detection of at least one substance of a fluid using the device is also specified with the following method steps: a) bringing the attachment surface and the fluid together in such a way that the substance is deposited on the attachment surface can and b) determining the resonant frequency of the thin-film resonator.
Der Dünnfilmresonator weist beispielsweise einen Schichtauf- bau aus unterer Elektrodenschicht, piezoelektrischer Schicht und oberer Elektrodenschicht auf. Die Elektrodenschichten sind an unterschiedlichen Seiten der piezoelektrischen Schicht angeordnet. Denkbar ist auch, dass die Elektrodenschichten an einer Seite der piezoelektrischen Schicht ange- ordnet sind.The thin-film resonator has, for example, a layer structure comprising a lower electrode layer, a piezoelectric layer and an upper electrode layer. The electrode layers are arranged on different sides of the piezoelectric layer. It is also conceivable that the electrode layers are arranged on one side of the piezoelectric layer.
Durch die elektrische Ansteuerung der Elektrodenschichten ist der Dünnfilmresonator zu Dickenschwingungen anregbar. Im Hinblick auf eine Verwendung zur Detektion einer Substanz einer Flüssigkeit ist es günstig, die piezoelektrische Schicht derart auszugestalten, dass sie aufgrund der Ansteuerung der Elektrodenschichten zu Scherdickenschwingungen anregbar ist. Für eine hohe Massensensitivität ist es vorteilhaft, die Resonanzfrequenz fR aus dem Bereich von einschließlich 500 MHz bis einschließlich 10 GHz zu wählen. Dazu ist die Schichtdicke der piezoelektrischen Schicht aus dem Bereich von einschließlich 0,1 μm bis einschließlich 20 μm gewählt.By the electrical control of the electrode layers of the thin-film resonator can be excited to thickness vibrations. With regard to a use for the detection of a substance of a liquid, it is favorable to design the piezoelectric layer such that it can be excited to shear thickness vibrations due to the activation of the electrode layers. For high mass sensitivity, it is advantageous to choose the resonant frequency f R from the range of 500 MHz to 10 GHz inclusive. For this purpose, the layer thickness of the piezoelectric layer is selected from the range of 0.1 μm to 20 μm inclusive.
Die piezoelektrische Schicht ist beispielsweise aus Zinkoxid. Ein anderes geeignetes Material ist beispielsweise Aluminiumnitrid. Die Elektrodenschichten weisen vorzugweise Schichtdicken von unter 1 μm auf (z.B. 10 nm) . Größere Schichtdicken von bis hin zu wenigen μm sind ebenfalls denkbar.The piezoelectric layer is made of, for example, zinc oxide. Another suitable material is aluminum nitride, for example. The electrode layers preferably have layer thicknesses of less than 1 μm (for example 10 nm). Larger layer thicknesses of up to a few microns are also conceivable.
In einer besonderen Ausgestaltung weist die Isolationsschicht anorganisches Isolationsmaterial auf. Das Isolationsmaterial kann dabei beliebig sein. Vorzugsweise aber weist das anorganische Isolationsmaterial zumindest eine aus der Gruppe Metall-Nitrid und Metall-Oxid ausgewählte chemische Verbindung auf. Beispielsweise ist das Isolationsmaterial Aluminiumoxid (AI2O3) oder Siliziumnitrid (Si3N4) . In einer bevorzugten Ausgestaltung ist das Metall-Oxid Siliziumdioxid (SiO2) . Siliziumdioxid zeichnet sich neben einer guten elektrischen Isola- tionsfähigkeit durch eine niedrige akustische Impedanz aus und ist daher besonders für die Anwendung mit dem Dünnfilmresonator geeignet.In a particular embodiment, the insulating layer comprises inorganic insulating material. The insulation material can be arbitrary. Preferably, however, the inorganic insulating material has at least one chemical compound selected from the group consisting of metal nitride and metal oxide. For example, the insulating material is alumina (Al 2 O 3 ) or silicon nitride (Si 3 N 4 ). In a preferred embodiment, the metal oxide is silicon dioxide (SiO 2 ). Silicon dioxide is characterized by a good electrical insulation Because of its low acoustic impedance, it is particularly suitable for use with the thin-film resonator.
Die Elektrodenschichten sind vorzugsweise aus Aluminium. In einer besonderen Ausgestaltung weist die Elektrodenschicht, auf der die Isolationsschicht angeordnet ist, Aluminium auf. Aluminium als Elektrodenmaterial ist für Dünnfilmresonatoren besonders geeignet. Aluminium weist einen niedrigen elektri- sehen Widerstand auf. Dadurch wird ein Widerstandsrauschen minimiert. Wesentlich ist auch eine geringe akustische Impedanz. Dies führt zu einer relativ hohen Massensensitivität . Ebenso die geringe Massendichte Aluminiums. Zudem zeichnet sich Aluminium durch eine hohe akustische Geschwindigkeit aus. Dadurch werden Phasenanteile im entsprechenden Material gering gehalten.The electrode layers are preferably made of aluminum. In a particular embodiment, the electrode layer, on which the insulation layer is arranged, comprises aluminum. Aluminum as electrode material is particularly suitable for thin-film resonators. Aluminum has a low electrical resistance. This minimizes resistance noise. Essential is also a low acoustic impedance. This leads to a relatively high mass sensitivity. Likewise the low mass density of aluminum. In addition, aluminum is characterized by a high acoustic speed. As a result, phase components in the corresponding material are kept low.
Neben Aluminium sind aber auch andere Materialien und Material-Kombinationen ebenso denkbar wie ein Mehrschichtaufbau aus unterschiedlichen Materialien.In addition to aluminum but other materials and combinations of materials are just as conceivable as a multi-layer structure of different materials.
Der Dünnfilmresonator kann auf einem beliebigen Substrat (Träger) aufgebracht sein. Vorzugsweise ist der Dünnfilmresonator auf einem Halbleitersubstrat angeordnet. Im Halbleiter- Substrat kann ein Ausleseschaltkreis integriert sein. Dies erfolgt beispielsweise mittels CMOS (Complementary Metal Oxid Semiconductor) -Technologie . Im Hinblick auf einen Platz sparenden Aufbau ist es besonders vorteilhaft, wenn Dünnfilmresonator über einen im Halbleitersubstrat integrierten Ausle- seschaltkreis angeordnet ist. Es ist aber genauso möglich, dass der Ausleseschaltkreis über ein SMD (Surface Mounted Device) -Bauelement realisiert ist.The thin-film resonator can be applied to any substrate (carrier). Preferably, the thin film resonator is disposed on a semiconductor substrate. In the semiconductor substrate, a readout circuit may be integrated. This is done for example by means of CMOS (Complementary Metal Oxide Semiconductor) technology. With regard to a space-saving design, it is particularly advantageous if the thin-film resonator is arranged via a readout circuit integrated in the semiconductor substrate. However, it is just as possible that the readout circuit is realized via an SMD (Surface Mounted Device) component.
Die Anlagerungsfläche ist in einer besonderen Ausgestaltung von der Isolationsschicht gebildet. Dies bedeute die Isolationsschicht eine Bio-Funktionalisierung trägt. Gemäß einer besonderen Ausgestaltung ist die Anlagerungsfläche aber von einer auf der Isolationsschicht aufgebrachten chemisch sensitiven Beschichtung gebildet. Die chemisch sensitive Beschichtung kann beispielsweise eine Kunststoffbe- Schichtung sein. Insbesondere weist die chemisch sensitiveThe abutment surface is formed in a particular embodiment of the insulating layer. This means that the insulation layer carries a bio-functionalization. According to a particular embodiment, however, the abutment surface is formed by a chemically sensitive coating applied to the insulating layer. The chemically sensitive coating may be, for example, a plastic coating. In particular, the chemically sensitive
Beschichtung Gold auf. Vorzugsweise ist die chemisch sensitive Beschichtung aus Gold. Eine chemisch sensitive Beschichtung aus Gold eignet sich besonders zur Bio- Funktionalisierung.Coating gold on. Preferably, the chemically sensitive coating is gold. A chemically sensitive gold coating is particularly suitable for bio-functionalization.
Die chemisch sensitive Beschichtung ist auf der Isolationsschicht aufgebracht. Damit trägt die chemisch sensitive Beschichtung selbst auch zur Resonanzfrequenz des Dünnfilmresonators bei. Insbesondere im Fall von Gold ist aufgrund der relativ hohen Massedichte im Hinblick auf eine möglichst hohe Massensensitivität eine möglichst geringe Schichtdicke von Vorteil. Gemäß einer besonderen Vorrichtung, wobei die chemisch sensitive Beschichtung eine Schichtdicke aus dem Bereich von 5 nm bis 30 nm aufweist. Diese Schichtdicken rei- chen völlig aus, um die notwendige Bio-Funktionalisierung zu erzielen. Gleichzeitig wird aufgrund der niedrigen Masse der chemisch sensitiven Beschichtung eine hohe Massensensitivität erzielt. Basis hierfür ist eine sehr hohe Resonanzfrequenz des Dünnfilmresonators. Bei geeigneten Materialien und Schichtdicken können Resonanzfrequenzen von aus dem Bereich von einschließlich 500 MHz bis einschließlich 10 GHz erzielt werden .The chemically sensitive coating is applied to the insulation layer. Thus, the chemically sensitive coating itself also contributes to the resonant frequency of the thin-film resonator. In particular, in the case of gold is due to the relatively high mass density in terms of the highest possible mass sensitivity a minimum layer thickness of advantage. According to a special device, wherein the chemically sensitive coating has a layer thickness in the range of 5 nm to 30 nm. These layer thicknesses are completely sufficient to achieve the necessary bio-functionalization. At the same time a high mass sensitivity is achieved due to the low mass of the chemically sensitive coating. The basis for this is a very high resonant frequency of the thin-film resonator. With suitable materials and layer thicknesses, resonance frequencies of from the range of inclusive 500 MHz up to and including 10 GHz can be achieved.
Die Vorrichtung kann zur Analyse von Gasen oder Gasgemischen eingesetzt werden. Vorzugsweise wird die Vorrichtung zur De- tektion von Biomolekülen in Flüssigkeiten eingesetzt.The device can be used for the analysis of gases or gas mixtures. Preferably, the device is used for the detection of biomolecules in liquids.
Zusammenfassen ergeben sich mit der Erfindung folgende besonderen Vorteile:To summarize, the invention provides the following special advantages:
- Die Vorrichtung zur Detektion einer Substanz eines Fluids kann sehr flexibel aufgebaut sein. So ist der Dünnfilmresonator der Vorrichtung entweder auf einem Wafer (z.B. aus Halb- leitermaterial) oder einer CMOS-Auslese-Elektronik oder auf einer CMOS-Auslese-Elektronik aufgebaut, die über eine Isolierungsschicht (beispielsweise SiO2) vom Dünnfilmresonator abgetrennt ist.- The device for detecting a substance of a fluid can be constructed very flexible. Thus, the thin film resonator of the device is either on a wafer (eg half conductor material) or a CMOS readout electronics or on a CMOS readout electronics, which is separated via an insulating layer (for example, SiO 2 ) from the thin-film resonator.
- Insbesondere mit einer oberen Elektrodenschicht aus Aluminium sind folgende Vorteile realisiert: Durch den geringen elektrischen Widerstand wird das Widerstandsrauschen minimiert. Die geringe akustische Impedanz Aluminiums führt zu einer erhöhten Massensensitivität des Dünnfilmresonators. Den gleichen Effekt hat die geringe Massendichte Aluminiums mit dem Ergebnis, einer sehr hohen Massensensitivität.- Especially with an upper electrode layer made of aluminum following advantages are realized: Due to the low electrical resistance, the resistance noise is minimized. The low acoustic impedance of aluminum leads to an increased mass sensitivity of the thin-film resonator. The same effect has the low bulk density of aluminum with the result, a very high mass sensitivity.
Aluminium zeichnet sich auch durch eine hohe CMOS Kompatibi- lität aus. Damit ist die Integration in CMOS-Schaltkreise vereinfacht. Gold wäre hierfür eher ungeeignet, da es mit CMOS Schaltkreisen schwer kompatibel ist. Darüber hinaus zeichnet es sich durch eine relativ hohe Massendichte aus. Dies führt zu einer relativ geringen Massensensitivität.Aluminum is also characterized by a high CMOS compatibility. This simplifies integration with CMOS circuits. Gold would be less suitable for this because it is difficult to compatible with CMOS circuits. In addition, it is characterized by a relatively high mass density. This leads to a relatively low mass sensitivity.
- Aufgrund der Isolationsschicht ist eine effiziente elektrische Isolierung des Dünnfilmresonators und der Fluids voneinander realisiert.- Due to the insulating layer efficient electrical isolation of the thin-film resonator and the fluids is realized from each other.
- Im Falle von SiO2 als Isolationsmaterial verringert sich der Temperaturkoeffizient der Resonanzfrequenz, d.h. die Stabilität der Resonanzfrequenz des Dünnfilmresonators gegenüber Temperaturschwankungen wird erhöht.In the case of SiO 2 as insulating material, the temperature coefficient of the resonance frequency decreases, ie the stability of the resonant frequency of the thin-film resonator with respect to temperature fluctuations is increased.
- Bei Verwendung eines CVD-Prozesses zur Aufbringung der Isolationsschicht z.B. aus SiO2 wird die Oberfläche geglättet. Dies bewirkt eine Verringerung der akustischen Verluste insbesondere bei einer Anwendung in Wasser.- When using a CVD process for applying the insulation layer such as SiO 2 , the surface is smoothed. This causes a reduction in the acoustic losses, especially when used in water.
- Insbesondere die Kombination von Elektrodenschicht aus Aluminium und Isolationsschicht aus Siliziumdioxid ist vorteilhaft. Die akustischen Verluste von Aluminium und Siliziumdioxid sind geringer als von beispielsweise Gold. Es resultiert damit eine um etwa das Dreifache erhöhte Massensensitivität . Weil die Materialien Aluminium und Siliziumdioxid weniger Phasenanteile beinhalten als beispielsweise Gold, kann die piezoelektrische Schicht bei gleicher Resonanzfrequenz dicker gemacht werden. Dadurch befinden sich höhere Phasenanteile in der piezoelektrischen Schicht. Dies erhöht den effektiven piezoelektrischen Kopplungskoeffizient .In particular, the combination of aluminum electrode layer and silicon dioxide insulating layer is advantageous. The acoustic losses of aluminum and silicon dioxide are lower than, for example, gold. It results so that increased by about three times the mass sensitivity. Because the materials aluminum and silicon dioxide contain fewer phases than, for example, gold, the piezoelectric layer can be made thicker at the same resonant frequency. As a result, there are higher phase components in the piezoelectric layer. This increases the effective piezoelectric coupling coefficient.
- Durch die höhere Dicke der piezoelektrischen Schicht, ver- ringert sich die elektrische Kapazität des Dünnfilmresonators, was für viele Ausleseschaltkreise vorteilhaft ist.Due to the higher thickness of the piezoelectric layer, the electrical capacitance of the thin film resonator is reduced, which is advantageous for many readout circuits.
Anhand mehrerer Ausführungsbeispiele und der dazugehörigen Figuren wird die Erfindung im Folgenden näher beschrieben. Die Figuren sind schematisch und stellen keine maßstabsgetreuen Abbildungen dar.With reference to several embodiments and the associated figures, the invention will be described in more detail below. The figures are schematic and do not represent true to scale figures.
Figuren 1 bis 4 zeigen jeweils eine Ausführungsform der Vorrichtung zur Detektion einer Substanz eines Fluids in einem seitlichen Querschnitt.FIGS. 1 to 4 each show an embodiment of the device for detecting a substance of a fluid in a lateral cross-section.
Die Vorrichtung zur Detektion einer Substanz eines Fluids ist ein Biosensor zur Detektion von Biomolekülen. Die Biomoleküle sind Teile einer DNA. Alternativ dazu werden Biomoleküle in Form von Proteinen detektiert.The device for detecting a substance of a fluid is a biosensor for detecting biomolecules. The biomolecules are parts of a DNA. Alternatively, biomolecules are detected in the form of proteins.
Wesentlicher Bestandteil der Vorrichtung 1 zur Detektion einer Substanz eines Fluids 2 ist ein piezoakustischer Dünnfilmresonator 10 mit übereinander gestapelter piezoelektri- scher Schicht 11, Elektrodenschicht (top electrode) 12 und weiterer Elektrodenschicht (bottom electrode) 13. Die piezoelektrische Schicht ist aus Zinkoxid. Eine Schichtdicke der Zinkoxidschicht beträgt etwa 0,5 μm. Die obere Elektrodenschicht ist aus Aluminium und etwa 100 nm dick. Die untere Elektrodenschicht etwa 890 nm dick. Eine laterale Ausdehnung des Dünnfilmresonators beträgt etwa 200 μm. Der Dünnfilmresonator ist auf einem akustischen Spiegel 6 aus λ/4-dicken Schichten unterschiedlicher akustischer Impedanz eines Siliziumsubstrats 5 aufgebracht.An essential component of the device 1 for detecting a substance of a fluid 2 is a piezoacoustic thin-film resonator 10 with stacked piezoelectric layer 11, top electrode 12 and further bottom electrode 13. The piezoelectric layer is made of zinc oxide. A layer thickness of the zinc oxide layer is about 0.5 μm. The upper electrode layer is made of aluminum and about 100 nm thick. The bottom electrode layer is about 890 nm thick. A lateral extent of the thin film resonator is about 200 μm. The thin film resonator is mounted on an acoustic mirror 6 of λ / 4-thick layers of different acoustic impedance of a silicon substrate 5.
Unmittelbar auf einer der piezoelektrischen Schicht abgekehrten Seite 121 der Elektrodenschicht 12 ist eine elektrische Isolationsschicht 4 zur elektrischen Isolierung der Elektrodenschicht 12 angeordnet. Die Isolationsschicht ist etwa 100 nm dick und besteht aus Siliziumdioxid als anorganisches Iso- lationsmaterial . In einer alternativen Ausgestaltung ist das anorganische Isolationsmaterial Siliziumnitrid. Aufgebracht wird die Isolationsschicht mit Hilfe eines CVD (Chemical Va- pour Deposition) -Verfahrens .Immediately on a side facing away from the piezoelectric layer side 121 of the electrode layer 12, an electrical insulation layer 4 for electrically insulating the electrode layer 12 is arranged. The insulating layer is about 100 nm thick and consists of silicon dioxide as an inorganic insulating material. In an alternative embodiment, the inorganic insulating material is silicon nitride. The insulation layer is applied by means of a CVD (Chemical Vacuum Deposition) method.
Beispiel 1:Example 1:
Zur Bildung der Anlagerungsfläche 3 für die Anlagerung der Substanz des Fluids ist auf der Isolationsschicht eine chemisch sensitive Beschichtung 7 aus Gold aufgebracht (Figur 1) . Die Beschichtung weist eine Funktionalisierung für die Biomoleküle auf. Die Biomoleküle können an der Anlagerungsfläche angelagert werden.To form the attachment surface 3 for the attachment of the substance of the fluid, a chemically sensitive coating 7 made of gold is applied to the insulation layer (FIG. 1). The coating has a functionalization for the biomolecules. The biomolecules can be attached to the attachment surface.
Der Dünnfilmresonator ist über einen in CMOS-Technologie im Substrat 5 integrierten Ausleseschaltkreis 8 angeordnet. Zur elektrischen Isolierung des Ausleseschaltkreises ist eine Isolationsschicht 81 zwischen dem akustischen Spiegel 5 und dem Ausleseschaltkreis 8 vorhanden. Diese Isolationsschicht besteht aus Siliziumdioxid. Über die elektrischen Kontakte 82 ist der Ausleseschaltkreis zur elektrischen Ansteuerung mit den Elektrodenschichten des Dünnfilmresonators verbunden.The thin-film resonator is arranged via a readout circuit 8 integrated in the substrate 5 in CMOS technology. For electrical isolation of the readout circuit, an insulating layer 81 is present between the acoustic mirror 5 and the readout circuit 8. This insulation layer consists of silicon dioxide. About the electrical contacts 82 of the readout circuit for electrical control is connected to the electrode layers of the thin-film resonator.
Beispiel 2:Example 2:
Im Gegensatz zum vorangegangenen Beispiel ist keine zusätzliche Isolationsschicht zwischen dem akustischen Spiegel 6, auf dem der Dünnfilmresonator angeordnet ist, und dem Ausleseschaltkreis 8 vorhanden (Figur 2) . Bei spiel 3 :In contrast to the previous example, no additional insulating layer is present between the acoustic mirror 6, on which the thin-film resonator is arranged, and the read-out circuit 8 (FIG. 2). At game 3:
Gemäß diesem Beispiel ist der Dünnfilmresonator nicht über einen im Siliziumsubstrat integrierten Ausleseschaltkreis angeordnet (Figur 3) . Über den akustischen Spiegel findet unmittelbar eine akustische Entkopplung des Dünnfilmresonators und des Substrats statt. Ein nicht dargestellter Ausleseschaltkreis ist entweder an einer anderen Stelle des Halblei- tersubstrats integriert, oder als externes Bauelement realisiert. Über die Kontakte 83 ist dieser Ausleseschaltkreis mit den Elektrodenschichten des Dünnfilmresonators elektrisch verbunden .According to this example, the thin-film resonator is not arranged over a read-out circuit integrated in the silicon substrate (FIG. 3). An acoustic decoupling of the thin-film resonator and the substrate takes place directly via the acoustic mirror. An unillustrated readout circuit is either integrated at a different location of the semiconductor substrate, or implemented as an external component. Via the contacts 83, this readout circuit is electrically connected to the electrode layers of the thin-film resonator.
Beispiel 4:Example 4:
Dieses Ausführungsbeispiel leitet sich vom Beispiel 1 ab. Im Unterschied dazu bildet die Isolationsschicht 4 die Anlagerungsfläche. Die Isolationsschicht weist die für die Anlage- rung der Biomoleküle notwendige Biofunktionalisierung auf.This embodiment is derived from Example 1. In contrast, the insulation layer 4 forms the attachment surface. The isolation layer has the biofunctionalization necessary for the incorporation of the biomolecules.
Weitere Ausführungsbeispiele ergeben sich durch beliebige Kombinationen der dargestellten Beispiele. Further exemplary embodiments result from any combination of the illustrated examples.

Claims

Patentansprüche claims
1. Vorrichtung (1) zur Detektion mindestens einer Substanz eines Fluids (2), aufweisend einen piezoakustischen Dünnfilm- resonator (10) mit1. Device (1) for detecting at least one substance of a fluid (2), comprising a piezoacoustic thin-film resonator (10) with
- mindestens einer piezoelektrischen Schicht (11),at least one piezoelectric layer (11),
- einer an der piezoelektrischen Schicht (11) angeordneten Elektrodenschicht (12),an electrode layer (12) arranged on the piezoelectric layer (11),
- mindestens einer an der piezoelektrischen Schicht (11) an- geordneten weiteren Elektrodenschicht (13) undat least one further electrode layer (13) arranged on the piezoelectric layer (11) and
- mindestens eine Anlagerungsfläche (3) zum Anlagern der Substanz des Fluids (2), wobei- At least one abutment surface (3) for attaching the substance of the fluid (2), wherein
- die piezoelektrische Schicht (11), die Elektrodenschichten (12, 13) und die Anlagerungsfläche (3) derart ausgestaltet und aneinander angeordnet sind, dass- The piezoelectric layer (11), the electrode layers (12, 13) and the abutment surface (3) are designed and arranged in such a way that
- durch eine elektrische Ansteuerung der Elektrodenschichten (12, 13) ein Anregungswechselfeld in die piezoelektrische Schicht (11) eingekoppelt werden kann,an excitation alternating field can be coupled into the piezoelectric layer (11) by electrical activation of the electrode layers (12, 13),
- der Dünnfilmresonator (10) aufgrund eines in die piezo- elektrische Schicht (11) eingekoppelten Anregungswechselfeldes zu einer Resonanzschwingung mit einer Resonanzfrequenz fR anregbar ist und- The thin-film resonator (10) can be excited to a resonance oscillation with a resonant frequency f R due to an excitation alternating field coupled into the piezoelectric layer (11), and
- die Resonanzfrequenz fR von einer an der Anlagerungsfläche (3) angelagerten Menge der Substanz abhängig ist, dadurch gekennzeichnet, dass unmittelbar auf einer der piezoelektrischen Schicht abgekehrten Seite (121) mindestens einer der Elektrodenschichten mindestens eine elektrische Isolationsschicht (4) zur elektrischen Isolierung der Elektrodenschicht angeordnet ist.the resonance frequency f R depends on an amount of substance deposited on the abutment surface (3), characterized in that at least one of the electrode layers at least one of the electrode layers has at least one electrical insulation layer (4) for electrical insulation of the side facing away from the piezoelectric layer Electrode layer is arranged.
2. Vorrichtung nach Anspruch 1, wobei die Isolationsschicht anorganisches Isolationsmaterial aufweist.2. Device according to claim 1, wherein the insulating layer comprises inorganic insulating material.
3. Vorrichtung nach Anspruch 2, wobei das anorganische Isola- tionsmaterial zumindest eine aus der Gruppe Metall-Nitrid und3. Device according to claim 2, wherein the inorganic insulating material is at least one of the group of metal nitride and
Metall-Oxid ausgewählte chemische Verbindung aufweist. Metal oxide selected chemical compound.
4. Vorrichtung nach einem der Ansprüche 3, wobei das Metall- Oxid Siliziumdioxid ist.4. Device according to one of claims 3, wherein the metal oxide is silicon dioxide.
5. Vorrichtung nach einem der Ansprüche 1 bis 4, wobei die Elektrodenschicht, auf der die Isolationsschicht angeordnet ist, Aluminium aufweist.5. Device according to one of claims 1 to 4, wherein the electrode layer on which the insulating layer is disposed, aluminum.
6. Vorrichtung nach einem der Ansprüche 1 bis 5, wobei der Dünnfilmresonator auf einem Halbleitersubstrat (5) angeordnet ist.6. Device according to one of claims 1 to 5, wherein the thin film resonator on a semiconductor substrate (5) is arranged.
7. Vorrichtung nach Anspruch 6, wobei der Dünnfilmresonator über einer im Halbleitersubstrat integrierten Ausleseschalt¬ kreis angeordnet ist.7. The apparatus of claim 6, wherein the thin film resonator is disposed on an integrated readout circuit in the semiconductor substrate ¬ circle.
8. Vorrichtung nach einem der Ansprüche 1 bis 7, wobei die Anlagerungsfläche von der Isolationsschicht gebildet ist.8. Device according to one of claims 1 to 7, wherein the abutment surface is formed by the insulating layer.
9. Vorrichtung nach einem der Ansprüche 1 bis 7, wobei die Anlagerungsfläche von einer auf der Isolationsschicht aufge¬ brachten chemisch sensitiven Beschichtung (7) gebildet ist.9. Device according to one of claims 1 to 7, wherein the abutment surface is formed by a on the insulation layer brought up ¬ chemically sensitive coating (7).
10. Vorrichtung nach Anspruch 9, wobei die chemisch sensitive Beschichtung Gold aufweist.10. The device of claim 9, wherein the chemically sensitive coating comprises gold.
11. Vorrichtung nach Anspruch 9 oder 10, wobei die chemisch sensitive Beschichtung eine Schichtdicke aus dem Bereich von 5 nm bis 30 nm aufweist.11. The device according to claim 9 or 10, wherein the chemically sensitive coating has a layer thickness in the range of 5 nm to 30 nm.
12. Verfahren zur Detektion mindestens einer Substanz eines Fluids (2) unter Verwendung einer Vorrichtung (1) nach einem der Ansprüche 1 bis 11 mit folgenden Verfahrensschritten: a) Zusammenbringen der Anlagerungsfläche (3) und des Fluids (2) derart, dass die Substanz an der Anlagerungsfläche (3) angelagert werden kann, und b) Bestimmen der Resonanzfrequenz des Dünnfilmresonators (10) . 12. A method for detecting at least one substance of a fluid (2) using a device (1) according to one of claims 1 to 11 with the following method steps: a) bringing together the attachment surface (3) and the fluid (2) such that the substance can be deposited on the abutment surface (3), and b) determining the resonant frequency of the thin-film resonator (10).
EP09783557.3A 2008-10-21 2009-09-29 Apparatus and method for detection of a substance by means of a film bulk acoustic resonator (FBAR) with isolating layer and readout integrated circuit Active EP2342555B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200810052437 DE102008052437A1 (en) 2008-10-21 2008-10-21 Device and method for detecting a substance with the aid of a thin-film resonator with an insulating layer
PCT/EP2009/062623 WO2010046212A1 (en) 2008-10-21 2009-09-29 Device and method for detecting a substance using a thin film resonator (fbar) having an insulating layer

Publications (2)

Publication Number Publication Date
EP2342555A1 true EP2342555A1 (en) 2011-07-13
EP2342555B1 EP2342555B1 (en) 2017-11-01

Family

ID=41426235

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09783557.3A Active EP2342555B1 (en) 2008-10-21 2009-09-29 Apparatus and method for detection of a substance by means of a film bulk acoustic resonator (FBAR) with isolating layer and readout integrated circuit

Country Status (6)

Country Link
US (1) US9046464B2 (en)
EP (1) EP2342555B1 (en)
JP (1) JP2012506549A (en)
CN (2) CN102216765A (en)
DE (1) DE102008052437A1 (en)
WO (1) WO2010046212A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008052437A1 (en) 2008-10-21 2010-04-29 Siemens Aktiengesellschaft Device and method for detecting a substance with the aid of a thin-film resonator with an insulating layer
GB201121660D0 (en) * 2011-12-15 2012-01-25 Cambridge Entpr Ltd Measurement method using a sensor, sensor system and sensor
US9370321B2 (en) 2012-06-25 2016-06-21 Empire Technology Development Llc Ultrasound based antigen binding detection
CA3001609A1 (en) * 2015-10-14 2017-04-20 Quansor Corporation Continuous flow fluid contaminant sensing system and method
US10618045B2 (en) * 2015-10-28 2020-04-14 Qorvo Biotechnologies, Llc Sensor device with BAW resonator and through-substrate fluidic vias
DE102016205293A1 (en) * 2016-03-31 2017-10-05 Siemens Aktiengesellschaft Method for detecting at least one substance and substance detector
US20180003677A1 (en) * 2016-06-30 2018-01-04 Intel Corporation Piezoelectric package-integrated chemical species-sensitive resonant devices
GB201707440D0 (en) * 2017-05-09 2017-06-21 Cambridge Entpr Ltd Method for operation of resonator
FR3078165B1 (en) * 2018-02-19 2020-03-06 Apix Analytics HYDROCARBON ANALYSIS PROCESS
KR102527708B1 (en) * 2018-05-30 2023-05-02 삼성전기주식회사 Fine dust concentration sensor
TWI784331B (en) * 2020-10-22 2022-11-21 台灣奈米碳素股份有限公司 Method for manufacturing film bulk acoustic resonance device having specific resonant frequency

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5075641A (en) * 1990-12-04 1991-12-24 Iowa State University Research Foundation, Inc. High frequency oscillator comprising cointegrated thin film resonator and active device
DE4403893A1 (en) * 1994-02-08 1995-08-10 Claas Ohg Device for the automatic filling of loading containers with a stream of material
US5936150A (en) * 1998-04-13 1999-08-10 Rockwell Science Center, Llc Thin film resonant chemical sensor with resonant acoustic isolator
DE10023306C2 (en) * 2000-05-15 2002-07-11 Grieshaber Vega Kg Process for controlling piezoelectric drives in level measuring devices
DE10113778B4 (en) * 2000-12-29 2004-03-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Surface wave liquid sensor
JP2002372487A (en) * 2001-06-13 2002-12-26 Araco Corp Gas sensor
US7989851B2 (en) 2002-06-06 2011-08-02 Rutgers, The State University Of New Jersey Multifunctional biosensor based on ZnO nanostructures
WO2004017063A2 (en) * 2002-07-19 2004-02-26 Siemens Aktiengesellschaft Device and method for detecting a substance with the aid of a high frequency piezo-acoustic thin film resonator
DE10308975B4 (en) 2002-07-19 2007-03-08 Siemens Ag Device and method for detecting a substance
DE10242970A1 (en) * 2002-09-17 2004-04-01 Vega Grieshaber Kg Vibration level sensor compares mechanical oscillator amplitude and/or frequency with value and detects fault in mechanical oscillator if amplitude and/or frequency of value differs in defined manner
JP3920223B2 (en) 2003-01-07 2007-05-30 日本碍子株式会社 Reactive chip and target substance binding detection method using this chip
WO2005034348A1 (en) * 2003-09-30 2005-04-14 Siemens Aktiengesellschaft Piezoacoustic resonator and use of said piezoacoustic resonator
US20050148065A1 (en) 2003-12-30 2005-07-07 Intel Corporation Biosensor utilizing a resonator having a functionalized surface
US7146845B2 (en) * 2004-03-24 2006-12-12 Vega Grieshaber Kg Method for operating tests of vibration level switch sensors and corresponding vibration level switch
JP3952083B2 (en) 2004-09-10 2007-08-01 株式会社村田製作所 Submerged substance detection sensor and submerged substance detection apparatus using the same
JP2006234685A (en) * 2005-02-25 2006-09-07 Kyocera Kinseki Corp Chip for detecting small mass
JP4540057B2 (en) * 2005-06-06 2010-09-08 日本碍子株式会社 Soot detector
US20070000305A1 (en) * 2005-06-30 2007-01-04 Qing Ma Gas phase chemical sensor based on film bulk resonators (FBAR)
WO2008102577A1 (en) * 2007-02-19 2008-08-28 Murata Manufacturing Co., Ltd. Surface acoustic wave sensor
CN101034083B (en) 2007-03-12 2011-01-26 清华大学 Manufacturing method of sonic surface wave gas sensor
CN101217266B (en) 2008-01-09 2011-06-15 电子科技大学 Method for preparing bulk acoustic wave resonator
DE102008052437A1 (en) 2008-10-21 2010-04-29 Siemens Aktiengesellschaft Device and method for detecting a substance with the aid of a thin-film resonator with an insulating layer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2010046212A1 *

Also Published As

Publication number Publication date
CN102216765A (en) 2011-10-12
EP2342555B1 (en) 2017-11-01
WO2010046212A1 (en) 2010-04-29
CN104764802A (en) 2015-07-08
DE102008052437A1 (en) 2010-04-29
US20110248700A1 (en) 2011-10-13
JP2012506549A (en) 2012-03-15
US9046464B2 (en) 2015-06-02
CN104764802B (en) 2018-08-24

Similar Documents

Publication Publication Date Title
EP2342555B1 (en) Apparatus and method for detection of a substance by means of a film bulk acoustic resonator (FBAR) with isolating layer and readout integrated circuit
EP1549937B1 (en) Device and method for detecting a substance with a piezoelectric thin film resonator
DE102005043039B4 (en) Device with piezoacoustic resonator element, method for its production and method for outputting a signal as a function of a resonant frequency
DE102005043037B4 (en) Device with piezoacoustic resonator element, method for its production and method for outputting a signal as a function of a resonant frequency
DE69827767T2 (en) WEIGHT SENSOR AND METHOD FOR DETERMINING THE MASS
DE102009046875B4 (en) Lamb wave device
DE102006003845B3 (en) Piezo-acoustic thin film resonator e.g. film bulk acoustic resonator, for use as biosensor, has piezo ceramic layer with piezo ceramic material whose polar crystal axes are tilted against normal of substrate about specific tilting angle
DE102008029378B4 (en) Arrangement of a piezoacoustic resonator on an acoustic mirror of a substrate, method for producing the arrangement and use of the arrangement
DE102013102206A1 (en) Device with stacked functional structures and method of manufacture
DE102007029919A1 (en) By a monolithic antenna excited sound transducer
DE102007012383A1 (en) Working with guided bulk acoustic waves component
WO2012089443A1 (en) Electronic component and method for producing the electronic component
DE10308975B4 (en) Device and method for detecting a substance
DE102006004449A1 (en) Apparatus and method for detecting a substance in a liquid
WO2006058882A1 (en) Biochemical semiconductor chip laboratory comprising a coupled address and control chip and method for producing the same
EP1794579B1 (en) Piezo-acoustic thin film resonator having a crystalline zinc oxide layer
DE102006004448B3 (en) Thin-film condenser for detection of fluid e.g. liquid, has lower electrode layer with electrode layer ramps that are tilted opposite to substrate normal in same way around tilting angle, where ramps border directly at film
WO2006128830A1 (en) Temperature sensor
DE102009047807A1 (en) Apparatus and method for detecting at least one substance
DE102021112811B3 (en) GAS SENSOR WITH A MOBILIZING ELEMENT, PROCESS FOR ITS MANUFACTURE AND USE FOR THE DETECTION OF GASES
DE102006042724B4 (en) Device and method for detecting a substance in a fluid
DE19826617C1 (en) Quartz microbalance immunosensor with polymer coating containing additive to increase binding affinity
DE102004002914B4 (en) Device and method for detecting at least one substance
DE102015212257A1 (en) Humidity sensor, sensor arrangement and method for determining a moisture content
WO2005031330A1 (en) Device and method for detecting a number of substances with piezoacoustic resonators

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20110405

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

AX Request for extension of the european patent

Extension state: AL BA RS

DAX Request for extension of the european patent (deleted)
RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: SIEMENS AKTIENGESELLSCHAFT

17Q First examination report despatched

Effective date: 20160606

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

INTG Intention to grant announced

Effective date: 20170522

RIN1 Information on inventor provided before grant (corrected)

Inventor name: HUBER, THOMAS

Inventor name: SCHREITER, MATTHIAS

Inventor name: NIRSCHL, MARTIN

Inventor name: PITZER, DANA

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: SIEMENS AKTIENGESELLSCHAFT

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

Free format text: NOT ENGLISH

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 942536

Country of ref document: AT

Kind code of ref document: T

Effective date: 20171115

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

Free format text: LANGUAGE OF EP DOCUMENT: GERMAN

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 502009014509

Country of ref document: DE

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20171101

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180201

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171101

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171101

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171101

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171101

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180202

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180201

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171101

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180301

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171101

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171101

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171101

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171101

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171101

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171101

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 502009014509

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171101

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171101

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171101

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171101

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 10

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171101

26N No opposition filed

Effective date: 20180802

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171101

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171101

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20180930

REG Reference to a national code

Ref country code: IE

Ref legal event code: MM4A

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180929

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180929

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180930

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180930

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180930

REG Reference to a national code

Ref country code: AT

Ref legal event code: MM01

Ref document number: 942536

Country of ref document: AT

Kind code of ref document: T

Effective date: 20180929

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180929

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171101

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171101

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO

Effective date: 20090929

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MK

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20171101

REG Reference to a national code

Ref country code: FI

Ref legal event code: PCE

Owner name: BIOMENSIO LTD

REG Reference to a national code

Ref country code: DE

Ref legal event code: R081

Ref document number: 502009014509

Country of ref document: DE

Owner name: BIOMENSIO LTD., FI

Free format text: FORMER OWNER: SIEMENS AKTIENGESELLSCHAFT, 80333 MUENCHEN, DE

REG Reference to a national code

Ref country code: GB

Ref legal event code: 732E

Free format text: REGISTERED BETWEEN 20210819 AND 20210825

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20240821

Year of fee payment: 16

Ref country code: FI

Payment date: 20240828

Year of fee payment: 16

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20240826

Year of fee payment: 16

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20240826

Year of fee payment: 16