EP2330623A1 - Pressure-contacted high performance semiconductor module with some tape-like load connection elements - Google Patents

Pressure-contacted high performance semiconductor module with some tape-like load connection elements Download PDF

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Publication number
EP2330623A1
EP2330623A1 EP10187764A EP10187764A EP2330623A1 EP 2330623 A1 EP2330623 A1 EP 2330623A1 EP 10187764 A EP10187764 A EP 10187764A EP 10187764 A EP10187764 A EP 10187764A EP 2330623 A1 EP2330623 A1 EP 2330623A1
Authority
EP
European Patent Office
Prior art keywords
pressure
power semiconductor
semiconductor module
band
load connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10187764A
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German (de)
French (fr)
Inventor
Marco Lederer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
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Filing date
Publication date
Application filed by Semikron GmbH and Co KG, Semikron Elektronik GmbH and Co KG filed Critical Semikron GmbH and Co KG
Publication of EP2330623A1 publication Critical patent/EP2330623A1/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Definitions

  • the invention describes a power semiconductor module in pressure contact design for mounting on a cooling component.
  • a starting point of the invention form power semiconductor modules as exemplified by DE 197 19 703 A1 are known.
  • such power semiconductor modules generally consist of a housing with at least one electrically insulating substrate arranged therein for direct mounting on a cooling component.
  • the substrate in turn consists of an insulating body with a plurality of mutually insulated metallic interconnects located thereon and power semiconductor components located thereon and connected to these interconnects in a circuit-oriented manner.
  • the known power semiconductor modules have connection elements for external load and auxiliary connections as well as connecting elements arranged in the interior. These connecting elements for the circuit-compatible internal connections of the power semiconductor module are often designed as Drahtbonditatien.
  • the power semiconductor module has a pressure contact design for the thermally conductive connection of Power semiconductor module with a cooling component on.
  • at least one substrate with power semiconductor components is arranged in such a power semiconductor module.
  • the power semiconductor module also has a housing and outwardly leading load and control connection elements.
  • the substrate for example a DCB substrate, has an insulating body on whose first main surface facing the interior of the power semiconductor module printed conductors with load potential are arranged.
  • the disclosed load connection elements are here each formed as a metal molding with at least one external contact device, a band-like portion and outgoing therefrom contact feet.
  • the respective band-like portion is arranged parallel to the substrate surface and spaced therefrom.
  • the contact feet extend from the band-like portion to the substrate and contact this circuit.
  • these each have an elastic intermediate layer in the region of the respective strip-like sections.
  • the DE 10 2007 003 587 A1 discloses a power semiconductor module of the above type, wherein a pressure body between the printing device and a not directly adjacent further load connection element is arranged. In this case, a part of this pressure body extends through the pressure connection device immediately adjacent load connection element and thus exerts pressure from the pressure device directly to a pressure receiving point of this further load connection element.
  • the invention has for its object a power semiconductor module in Drucknapsaus arrangement to introduce, wherein the initiation of the pressure on at least one load connection element for contacting with the conductor tracks of the substrate is further improved in a simple manner.
  • the inventive idea is based on a power semiconductor module which can be arranged on a cooling device in pressure-contact design with at least one substrate, power semiconductor components arranged thereon, IGBTs with antiparallel-connected diodes, a housing and load and control connection elements leading to the outside.
  • the substrate itself has for this purpose an insulating material and on the first, the interior of the power semiconductor module facing, the main surface traces with load potential.
  • the substrate preferably also has at least one conductor track with control potential for driving the power semiconductor components.
  • the load connection elements of this power semiconductor module are each formed as metal moldings with a contact device, a band-like section and with a plurality of this outgoing contact feet.
  • the respective ribbon-like portions are arranged parallel to the substrate surface and spaced therefrom.
  • the contact feet, which extend from the band-like portion extend to the substrate, where it forms the circuit according to the contact of the load connection element.
  • the contact feet preferably contact the assigned printed conductor with load potential on the substrate, alternatively also directly the power semiconductor components.
  • the pressure is transmitted from at least one first band-like portion to another adjacent band-like portion by means of a pressure transfer device part of the surface, advantageously only a maximum of a fifth part of the surface of a band-like portion.
  • the pressure device of the power semiconductor module to a pressure transmission device, which is formed either as a pressure intermediate piece, as a deformation of the band-like portion itself or as a combination of the two.
  • Such a deformation of the band-like portion is advantageously formed as a embossed deformation with a recess on a first side of the band-like portion and a corresponding elevation on the opposite second side of the band-like portion.
  • such a pressure intermediate piece is advantageously formed as a plastic molded body, an associated main surface of a first band-like portion completely or partially covered and, on the side facing away from this main surface, at least one pressure body, which rests on the band-like portion of the adjacent load connection element part of the area. It can as well it may be preferred if this pressure intermediate piece simultaneously serves to isolate the two adjacent ribbon-like sections by covering the first ribbon-like section as far as its edges and over at least one edge. Especially here, in combination with said deformation, it may be advantageous if the pressure intermediate piece is partially disposed in a recess of the deformation, whereby a mechanical fixation is achieved, which of course is not limited to the case of the additional insulating function.
  • Fig. 1 shows a section through a first embodiment of the invention, a power semiconductor module.
  • Fig. 2 shows analog Fig.1 essential elements of a second embodiment of a power semiconductor module according to the invention.
  • Fig. 3 shows analog Fig.1 essential elements of a third embodiment of a power semiconductor module according to the invention.
  • FIG. 4 and 5 show two embodiments of a load connection element of a power semiconductor module according to the invention according to Fig. 2 in three-dimensional representation.
  • Fig. 1 shows a section through a first embodiment of the invention, a power semiconductor module (1).
  • This has a housing (3) with a frame-like housing part (30), which is connectable to a cooling member (2).
  • the frame-like housing part (30) in this case encloses the at least one substrate (5).
  • This in turn has an insulating body (52), preferably an insulating ceramic, such as aluminum oxide or aluminum nitrite.
  • the substrate (5) On the, the interior of the power semiconductor module (1) facing, the first main surface, the substrate (5) has a structured in itself Metallkaschtechnik.
  • the individual sections of this metal lamination which is preferably configured as a copper lamination, form the printed conductors (54) of the power semiconductor module (1).
  • the second main surface of the substrate (5) has a non-structured copper cladding (50) according to the prior art.
  • interconnects (54) of the substrate (5) are controllable, and / or uncontrolled power semiconductor devices (60) such as IGBT's (insulated gate bipolar transistor) arranged in each case with antiparallel freewheeling diodes, or MOS-FETs. These are circuitally connected to other interconnects (54), for example by means of wire bonds (62) connected.
  • IGBT's insulated gate bipolar transistor
  • the load connection elements (40, 42, 44) of the various necessary potentials serve for the external connection of the power electronic circuit to the substrate (5) of the power semiconductor module (1).
  • the load connection elements (40, 42, 44) are formed as metal moldings, each having a band-like portion (402, 422, 442) parallel to the substrate surface.
  • the strip-like sections (402, 422, 442) in this case form a stack, wherein these sections of the individual load connection elements (40, 42, 44) are each electrically insulated from one another.
  • a plurality of contact feet extend to the conductor tracks (54) of the substrate (5) associated with the circuit.
  • This pressure element (72) can be designed according to the prior art as a plastic molding with a suitable inner metal core, and / or other stiffening structures. It is also preferred if the pressure element (72) simultaneously serves as a cover of the power semiconductor module (1) and thus as part of the housing (3). Between this pressure element (72) and the first band-like portions (402) of a load connection element (40) in the pressure direction, a cushion element (74) with spring function for pressure storage is arranged.
  • the belt-like portion (402) of the stack in the first load connection element (40) on the belt-like portion (422) of the second load connection element (42) is provided between these band-like sections a pressure transmission means as one as Formed in the form of a molded plastic body (80) which completely covers the associated main surface of the band-like portion (422) of the second load connection element (42) and protrudes beyond the edge, whereby an additional electrically insulating intermediate layer between the first (40) and second (42) load connection element is replaced at least in the region of the band-like portions (402, 422).
  • the pressure intermediate piece (80) Facing the first belt-like portion (402), the pressure intermediate piece (80) has two pressure bodies (84) which are designed as pressure webs, wherein an arrangement of a plurality of rotationally symmetrical pressure nubs in a row can also be advantageous.
  • these pressure bodies (84) are provided with the first belt-like portion (402) only in partial area contact, wherein the left pressure body is provided approximately in alignment, with contact feet (400, 420, 440) arranged underneath in the pressure direction.
  • the largely symmetrical arrangement of the left and right pressure hulls (84) serves to uniform Druckein- and forwarding, represented by the pressure path (740) and on a band-like portion (442) of a third load connection element (44).
  • Fig. 2 shows analog Fig.1 essential elements of the printing device of a second embodiment of a power semiconductor module according to the invention (1). Shown are only the respective band-like portions (402, 422, 442) and respective contact feet (400, 420, 440) of three load connection elements (40, 42, 44), without necessary means for electrical insulation of the respective band-like portions.
  • the band-like portion (402) of the first load connection element (40) has as Pressure transmission device two deformations (90) of the belt-like portion (402) itself on. These are formed in the direction of the plane in each case as an upwardly open channel (92) with associated pressure bar (94) on the opposite side.
  • Fig. 3 shows analog Fig.1 essential elements of the printing device of a third embodiment of a power semiconductor module according to the invention (1). Shown are only the respective band-like portions (402, 422, 442) and contact feet (400, 420, 440) of three load connection elements, (40, 42, 44) without necessary means for electrical insulation of the respective band-like portions.
  • the band-like section (422) of the second load connection element (42) has as pressure transmission device two deformations (90) of the band-like section itself. These are formed in the direction of the plane in each case as a downwardly open channel (92), each associated with pressure ridge (94) on the opposite side.
  • the left deformation (90) is analogous Fig. 2 arranged, while the second deformation (90) is arranged centrally in the printing direction in alignment with the contact feet (440) of the third load connection element (44).
  • a pressure intermediate piece designed as a plastic molded body (80) is arranged between these.
  • This plastic molding is partially arranged in the centrally arranged groove (92) of the second load connection element (42) in order to fix it in its position.
  • FIG. 4 and 5 shows two embodiments of an exemplary load connection element (40) of a power semiconductor module according to the invention (1) according to Fig. 2 in three-dimensional representation.
  • This load connection element (40) has a contact device (404) for external electrical connection of the Power semiconductor module (1) in its continuation of the band-like portion (402) and starting from this, the contact feet (400).
  • Both embodiments according to 4 and 5 have in the respective band-like portion embossing technically produced deformations (90 a / b) each having a recess (92 a / b) on a first side of the band-like portion and each associated with this elevation (94 a / b) on the opposite second side of the band-like section on.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Power Conversion In General (AREA)
  • Connector Housings Or Holding Contact Members (AREA)

Abstract

The module has load connection elements (40, 42, 44) i.e. metal shaped bodies, with band-like sections (402, 422, 442), which are arranged parallel to a substrate surface and/or are arranged at distance from each other. Contact bases (400, 420, 440) are passed from the band-like sections to a substrate. Pressure transfer from one of the band-like sections to another one of the band-like sections takes place by a pressure transfer device. The pressure transfer device is formed as a pressure intermediate piece (80) and/or a deformation (90) of the band-like sections.

Description

Die Erfindung beschreibt ein Leistungshalbleitermodul in Druckkontaktausführung zur Anordnung auf einem Kühlbauteil. Einen Ausgangspunkt der Erfindung bilden Leistungshalbleitermodule wie sie beispielhaft aus der DE 197 19 703 A1 bekannt sind.The invention describes a power semiconductor module in pressure contact design for mounting on a cooling component. A starting point of the invention form power semiconductor modules as exemplified by DE 197 19 703 A1 are known.

Derartige Leistungshalbleitermodule bestehen nach dem allgemeinen Stand der Technik in der Regel aus einem Gehäuse mit mindestens einem darin angeordneten elektrisch isolierenden Substrat vorzugsweise zur direkten Montage auf einem Kühlbauteil. Das Substrat seinerseits besteht aus einem Isolierstoffkörper mit einer Mehrzahl darauf befindlicher gegeneinander isolierter metallischer Leiterbahnen und hierauf befindlichen und mit diesen Leiterbahnen schaltungsgerecht verbundenen Leistungshalbleiterbauelementen. Weiterhin weisen die bekannten Leistungshalbleitermodule Anschlusselemente für externe Last- und Hilfsanschlüsse sowie im Inneren angeordnete Verbindungselemente auf. Diese Verbindungselemente für die schaltungsgerechten internen Verbindungen des Leistungshalbleitermoduls sind häufig als Drahtbondverbindungen ausgebildet.According to the general state of the art, such power semiconductor modules generally consist of a housing with at least one electrically insulating substrate arranged therein for direct mounting on a cooling component. The substrate in turn consists of an insulating body with a plurality of mutually insulated metallic interconnects located thereon and power semiconductor components located thereon and connected to these interconnects in a circuit-oriented manner. Furthermore, the known power semiconductor modules have connection elements for external load and auxiliary connections as well as connecting elements arranged in the interior. These connecting elements for the circuit-compatible internal connections of the power semiconductor module are often designed as Drahtbondverbindungen.

Ebenfalls bekannt sind druckkontaktierte Leistungshalbleitermodule, wie sie in der DE 10 2006 006 423 A1 offenbart sind. Das Leistungshalbleitermodul gemäß dieser Druckschrift weist eine Druckkontaktausführung zur thermisch leitenden Verbindung des Leistungshalbleitermoduls mit einem Kühlbauteil auf. Ebenso ist in einem derartigen Leistungshalbleitermodul mindestens ein Substrat mit Leistungshalbleiterbauelementen angeordnet. Das Leistungshalbleitermodul weist zudem ein Gehäuse und nach außen führende Last- und Steueranschlusselemente auf. Das Substrat, beispielhaft ein DCB-Substrat, weist einen Isolierstoffkörper auf, auf dessen erster dem Inneren des Leistungshalbleitermoduls zugewandten Hauptfläche Leiterbahnen mit Lastpotential angeordnet sind.Also known are pressure-contacted power semiconductor modules, as described in the DE 10 2006 006 423 A1 are disclosed. The power semiconductor module according to this document has a pressure contact design for the thermally conductive connection of Power semiconductor module with a cooling component on. Likewise, at least one substrate with power semiconductor components is arranged in such a power semiconductor module. The power semiconductor module also has a housing and outwardly leading load and control connection elements. The substrate, for example a DCB substrate, has an insulating body on whose first main surface facing the interior of the power semiconductor module printed conductors with load potential are arranged.

Die offenbarten Lastanschlusselemente sind hier jeweils als Metallformkörper mit mindestens einer externen Kontakteinrichtung, einem bandartigen Abschnitt und mit von diesem ausgehenden Kontaktfüßen ausgebildet. Der jeweilige bandartige Abschnitt ist parallel zur Substratoberfläche und von dieser beabstandet angeordnet. Die Kontaktfüße reichen von dem bandartigen Abschnitt zum Substrat und kontaktieren dieses schaltungsgerecht. Zur elektrischen Isolation und Druckweiterleitung zwischen den einzelnen Lastanschlusselementen weisen diese im Bereich der jeweiligen bandartigen Abschnitte jeweils eine elastische Zwischenlage auf.The disclosed load connection elements are here each formed as a metal molding with at least one external contact device, a band-like portion and outgoing therefrom contact feet. The respective band-like portion is arranged parallel to the substrate surface and spaced therefrom. The contact feet extend from the band-like portion to the substrate and contact this circuit. For electrical insulation and pressure transfer between the individual load connection elements, these each have an elastic intermediate layer in the region of the respective strip-like sections.

Die DE 10 2007 003 587 A1 offenbart schließlich ein Leistungshalbleitermodul der oben genannten Art, wobei ein Druckkörper zwischen der Druckeinrichtung und einem nicht direkt benachbarten weiteren Lastanschlusselement angeordnet ist. Hierbei reicht ein Teil dieses Druckkörpers durch das der Druckeinrichtung unmittelbar benachbarte Lastanschlusselement hindurch und übt somit Druck von der Druckeinrichtung direkt auf eine Druckaufnahmestelle dieses weiteren Lastanschlusselement aus.The DE 10 2007 003 587 A1 Finally, discloses a power semiconductor module of the above type, wherein a pressure body between the printing device and a not directly adjacent further load connection element is arranged. In this case, a part of this pressure body extends through the pressure connection device immediately adjacent load connection element and thus exerts pressure from the pressure device directly to a pressure receiving point of this further load connection element.

Der Erfindung liegt die Aufgabe zugrunde ein ebenfalls Leistungshalbleitermodul in Druckkontaktausführung vorzustellen, wobei die Einleitung des Drucks auf mindestens ein Lastanschlusselement zu dessen Kontaktierung mit den Leiterbahnen des Substrats auf einfache Weise weiter verbessert wird.The invention has for its object a power semiconductor module in Druckkontaktausführung to introduce, wherein the initiation of the pressure on at least one load connection element for contacting with the conductor tracks of the substrate is further improved in a simple manner.

Die Aufgabe wird erfindungsgemäß gelöst, durch ein Leistungshalbleitermodul mit den Merkmalen des Anspruchs 1. Bevorzugte Ausführungsformen sind in den abhängigen Ansprüchen beschrieben.The object is achieved according to the invention by a power semiconductor module having the features of claim 1. Preferred embodiments are described in the dependent claims.

Der erfinderische Gedanke geht aus von einem auf einer Kühleinrichtung anordenbaren Leistungshalbleitermodul in Druckkontaktausführung mit mindestens einem Substrat, hierauf angeordneten Leistungshalbleiterbauelementen, beispielhaft IGBTs mit antiparallel geschalteten Dioden, einem Gehäuse und nach außen führenden Last- und Steueranschlusselementen. Das Substrat selbst weist hierzu einen Isolierstoffkörper auf und auf dessen erster, dem Inneren des Leistungshalbleitermoduls zugewandten, Hauptfläche Leiterbahnen mit Lastpotential. Weiterhin weist das Substrat vorzugsweise auch mindestens eine Leiterbahn mit Steuerpotential zu Ansteuerung der Leistungshalbleiterbauelemente auf.The inventive idea is based on a power semiconductor module which can be arranged on a cooling device in pressure-contact design with at least one substrate, power semiconductor components arranged thereon, IGBTs with antiparallel-connected diodes, a housing and load and control connection elements leading to the outside. The substrate itself has for this purpose an insulating material and on the first, the interior of the power semiconductor module facing, the main surface traces with load potential. Furthermore, the substrate preferably also has at least one conductor track with control potential for driving the power semiconductor components.

Die Lastanschlusselemente dieses Leistungshalbleitermoduls sind jeweils ausgebildet als Metallformkörper mit einer Kontakteinrichtung, einem bandartigen Abschnitt und mit einer Mehrzahl von diesem ausgehenden Kontaktfüßen. Die jeweiligen bandartige Abschnitte sind parallel zur Substratoberfläche und von dieser beabstandet angeordnet. Die Kontaktfüße, die von dem bandartigen Abschnitt ausgehen reichen zum Substrat und bildet dort schaltungsgerecht den Kontakt des Lastanschlusselements aus. Vorzugsweise kontaktieren die Kontaktfüße hierzu auf dem Substrat die zugeordnete Leiterbahn mit Lastpotential, alternativ auch direkt die Leistungshalbleiterbauelemente.The load connection elements of this power semiconductor module are each formed as metal moldings with a contact device, a band-like section and with a plurality of this outgoing contact feet. The respective ribbon-like portions are arranged parallel to the substrate surface and spaced therefrom. The contact feet, which extend from the band-like portion extend to the substrate, where it forms the circuit according to the contact of the load connection element. For this purpose, the contact feet preferably contact the assigned printed conductor with load potential on the substrate, alternatively also directly the power semiconductor components.

Erfindungsgemäß erfolgt die Druckübertragung von mindestens einem ersten bandartigen Abschnitt auf einen weiteren benachbarten bandartigen Abschnitt mittels einer Druckübertragungseinrichtung teilflächig, vorteilhafterweise nur auf maximal einem fünften Teil der Fläche eines bandartigen Abschnitts. Die weist den Vorteil auf, dass der Druck auf diejenigen Flächenbereiche eingeleitet werden kann, denen in Druckrichtung fluchtend Kontaktfüße zugeordnet sind. Hierdurch wird also Druck gezielt auf Bereiche des bandartigen Abschnitts eingeleitet, die zur Kontaktsicherheit der elektrischen Verbindung zwischen Kontaktfüßen und Substrat notwendig sind.According to the invention, the pressure is transmitted from at least one first band-like portion to another adjacent band-like portion by means of a pressure transfer device part of the surface, advantageously only a maximum of a fifth part of the surface of a band-like portion. This has the advantage that the pressure on those surface areas can be initiated, which are assigned in the printing direction aligned contact feet. As a result, pressure is thus introduced specifically to areas of the band-like section, which are necessary for the contact reliability of the electrical connection between the contact feet and the substrate.

Hierzu weist die Druckeinrichtung des Leistungshalbleitermoduls eine Druckübertragungseinrichtung auf, die entweder als ein Druckzwischenstück, als eine Verformung des bandartigen Abschnitts selbst oder als eine Kombination aus beiden ausgebildet ist.For this purpose, the pressure device of the power semiconductor module to a pressure transmission device, which is formed either as a pressure intermediate piece, as a deformation of the band-like portion itself or as a combination of the two.

Eine derartige Verformung des bandartigen Abschnitts ist vorteilhafterweise als eine prägetechnisch hergestellte Verformung mit einer Vertiefung auf einer ersten Seite des bandartigen Abschnitts und einer dieser zugeordneten Erhebung auf der gegenüberliegenden zweiten Seite des bandartigen Abschnitts ausgebildet ist.Such a deformation of the band-like portion is advantageously formed as a embossed deformation with a recess on a first side of the band-like portion and a corresponding elevation on the opposite second side of the band-like portion.

Demgegenüber ist ein derartiges Druckzwischenstück vorteilhafterweise als ein Kunststoffformkörper ausgebildet, eine zugeordnete Hauptfläche eines ersten bandartigen Abschnitts vollständig oder teilweise bedeckt und, auf der dieser Hauptfläche abgewandten Seite, mindestens einen Druckkörper aufweist, der auf dem bandartigen Abschnitt des benachbarten Lastanschlusselements teilflächig aufliegt. Es kann ebenso bevorzugt sein, wenn dieses Druckzwischenstück gleichzeitig der Isolierung der beiden benachbarten bandartigen Abschnitte dient, indem es den ersten bandartigen Abschnitt bis zu seinen Rändern und über mindestens einen Rand hinaus bedeckt. Speziell hierbei kann es in Kombination mit der genannten Verformung vorteilhaft sein, wenn das Druckzwischenstück teilweise in einer Vertiefung der Verformung angeordnet ist, wodurch ein mechanische Fixierung erzielt wird, die selbstverständlich nicht auf den Fall der zusätzlichen isolierenden Funktion beschränkt ist.In contrast, such a pressure intermediate piece is advantageously formed as a plastic molded body, an associated main surface of a first band-like portion completely or partially covered and, on the side facing away from this main surface, at least one pressure body, which rests on the band-like portion of the adjacent load connection element part of the area. It can as well it may be preferred if this pressure intermediate piece simultaneously serves to isolate the two adjacent ribbon-like sections by covering the first ribbon-like section as far as its edges and over at least one edge. Especially here, in combination with said deformation, it may be advantageous if the pressure intermediate piece is partially disposed in a recess of the deformation, whereby a mechanical fixation is achieved, which of course is not limited to the case of the additional insulating function.

Die erfinderische Lösung wird an Hand der Ausführungsbeispiele der Fig. 1 bis 5 weiter erläutert.The inventive solution is based on the embodiments of the Fig. 1 to 5 further explained.

Fig. 1 zeigt einen Schnitt durch eine erste erfindungsgemäße Ausgestaltung ein Leistungshalbleitermoduls. Fig. 1 shows a section through a first embodiment of the invention, a power semiconductor module.

Fig. 2 zeigt analog Fig.1 wesentliche Elemente einer zweiten Ausgestaltung eines erfindungsgemäßen Leistungshalbleitermoduls. Fig. 2 shows analog Fig.1 essential elements of a second embodiment of a power semiconductor module according to the invention.

Fig. 3 zeigt analog Fig.1 wesentliche Elemente einer dritten Ausgestaltung eines erfindungsgemäßen Leistungshalbleitermoduls. Fig. 3 shows analog Fig.1 essential elements of a third embodiment of a power semiconductor module according to the invention.

Fig. 4 und 5 zeige zwei Ausgestaltungen eines Lastanschlusselementes eines erfindungsgemäßen Leistungshalbleitermoduls gemäß Fig. 2 in dreidimensionaler Darstellung. 4 and 5 show two embodiments of a load connection element of a power semiconductor module according to the invention according to Fig. 2 in three-dimensional representation.

Fig. 1 zeigt einen Schnitt durch eine erste erfindungsgemäße Ausgestaltung ein Leistungshalbleitermoduls (1). Dieses weist ein Gehäuse (3) mit einem rahmenartigen Gehäuseteil (30) auf, der mit einem Kühlbauteil (2) verbindbar ist. Der rahmenartige Gehäuseteil (30) umschließt hierbei das mindestens eine Substrat (5). Dieses wiederum weist einen Isolierstoffkörper (52), vorzugsweise eine Isolierkeramik, wie Aluminiumoxid oder Aluminiumnitrit auf. Fig. 1 shows a section through a first embodiment of the invention, a power semiconductor module (1). This has a housing (3) with a frame-like housing part (30), which is connectable to a cooling member (2). The frame-like housing part (30) in this case encloses the at least one substrate (5). This in turn has an insulating body (52), preferably an insulating ceramic, such as aluminum oxide or aluminum nitrite.

Auf der, dem Inneren des Leistungshalbleitermoduls (1) zugewandten, ersten Hauptfläche weist das Substrat (5) eine in sich strukturierte Metallkaschierung auf. Die einzelnen Abschnitte dieser vorzugsweise als Kupferkaschierung ausgestalteten Metallkaschierung bilden hierbei die Leiterbahnen (54) des Leistungshalbleitermoduls (1) aus. Die zweite Hauptfläche des Substrats (5) weist gemäß dem Stand der Technik eine nicht strukturierte Kupferkaschierung (50) auf.On the, the interior of the power semiconductor module (1) facing, the first main surface, the substrate (5) has a structured in itself Metallkaschierung. The individual sections of this metal lamination, which is preferably configured as a copper lamination, form the printed conductors (54) of the power semiconductor module (1). The second main surface of the substrate (5) has a non-structured copper cladding (50) according to the prior art.

Auf den Leiterbahnen (54) des Substrats (5) sind steuerbare, und / oder ungesteuerte Leistungshalbleiterbauelemente (60) wie beispielhaft IGBT's (insulated gate bipolar Transistor) mit jeweils antiparallel geschalteten Freilaufdioden, oder MOS-FETs angeordnet. Diese sind schaltungsgerecht mit weiteren Leiterbahnen (54), beispielhaft mittels Drahtbondverbindungen (62), verbunden.On the interconnects (54) of the substrate (5) are controllable, and / or uncontrolled power semiconductor devices (60) such as IGBT's (insulated gate bipolar transistor) arranged in each case with antiparallel freewheeling diodes, or MOS-FETs. These are circuitally connected to other interconnects (54), for example by means of wire bonds (62) connected.

Die Lastanschlusselemente (40, 42, 44) der verschiedenen notwendigen Potentiale dienen der externen Verbindung der leistungselektronischen Schaltung auf dem Substrat (5) des Leistungshalbleitermoduls (1). Hierzu sind die Lastanschlusselemente (40, 42, 44) als Metallformkörper ausgebildet, die je einen bandartigen Abschnitt (402, 422, 442) parallel zur Substratoberfläche aufweisen. Die bandartigen Abschnitte (402, 422, 442) bilden hierbei einen Stapel, wobei diese Abschnitte der einzelnen Lastanschlusselemente (40, 42, 44) jeweils gegeneinander elektrisch isoliert sind.The load connection elements (40, 42, 44) of the various necessary potentials serve for the external connection of the power electronic circuit to the substrate (5) of the power semiconductor module (1). For this purpose, the load connection elements (40, 42, 44) are formed as metal moldings, each having a band-like portion (402, 422, 442) parallel to the substrate surface. The strip-like sections (402, 422, 442) in this case form a stack, wherein these sections of the individual load connection elements (40, 42, 44) are each electrically insulated from one another.

Von den jeweiligen bandartigen Abschnitten (402, 422, 442) reichen jeweils mehrere Kontaktfüße (400, 420, 440) zu den schaltungsgerecht zugeordneten Leiterbahnen (54) des Substrats (5).Of the respective strip-like sections (402, 422, 442), in each case a plurality of contact feet (400, 420, 440) extend to the conductor tracks (54) of the substrate (5) associated with the circuit.

Die schematisch dargestellte Druckeinrichtung (70) zur thermischen Verbindung des Leistungshalbleitermoduls (1) mit einem Kühlbauteil (2) und gleichzeitig zur elektrischen Kontaktierung der Kontaktfüße (400, 420, 440) der Lastanschlusselemente (40, 42, 44) mit den Leiterbahnen (54), des Substrats (5) weist neben den beschrieben bandartigen Abschnitten (402, 422, 442) der Lastanschlusselemente (40,42,44) noch ein Druckelement (72) zum Druckaufbau auf.The schematically illustrated pressure device (70) for the thermal connection of the power semiconductor module (1) with a cooling component (2) and simultaneously for electrical contacting of the contact feet (400, 420, 440) of the load connection elements (40, 42, 44) with the conductor tracks (54) , of the substrate (5), in addition to the described band-like sections (402, 422, 442) of the load connection elements (40, 42, 44), also has a pressure element (72) for building up pressure.

Dieses Druckelement (72) kann gemäß dem Stand der Technik als Kunststoffformkörper mit geeigneter innen liegender Metallseele, und /oder weiteren Versteifungsstrukturen ausgeführt sein. Es ist ebenso bevorzugt, wenn das Druckelement (72) gleichzeitig als Deckel des Leistungshalbleitermoduls (1) und somit als Teil des Gehäuses (3) dient. Zwischen diesem Druckelement (72) und dem in Druckrichtung ersten bandartige Abschnitte (402) eines Lastanschlusselements (40) ist ein Kissenelement (74) mit Federfunktion zur Druckspeicherung angeordnet.This pressure element (72) can be designed according to the prior art as a plastic molding with a suitable inner metal core, and / or other stiffening structures. It is also preferred if the pressure element (72) simultaneously serves as a cover of the power semiconductor module (1) and thus as part of the housing (3). Between this pressure element (72) and the first band-like portions (402) of a load connection element (40) in the pressure direction, a cushion element (74) with spring function for pressure storage is arranged.

Zur Druckübertragung vom Druckelement (72) über den Druckspeicher, den bandartigen Abschnitt (402), des im Stapel ersten Lastanschlusselements (40) auf den bandartigen Abschnitt (422) des zweiten Lastanschlusselements (42) ist zwischen diesen bandartigen Abschnitten eine Druckübertragungseinrichtung vorgesehen, die als ein als Druckzwischenstück in Form eines Kunststoffformkörper (80) ausgebildet ist, das die zugeordnete Hauptfläche des bandartigen Abschnitts (422) des zweiten Lastanschlusselements (42) vollständig bedeckt und über den Rand hinausragt, wodurch eine zusätzliche elektrisch, isolierende Zwischenlage zwischen dem ersten (40) und zweiten (42) Lastanschlusselements zumindest im Bereich der bandartigen Abschnitte (402, 422) ersetzt wird.For pressure transmission from the pressure element (72) via the pressure accumulator, the belt-like portion (402) of the stack in the first load connection element (40) on the belt-like portion (422) of the second load connection element (42) is provided between these band-like sections a pressure transmission means as one as Formed in the form of a molded plastic body (80) which completely covers the associated main surface of the band-like portion (422) of the second load connection element (42) and protrudes beyond the edge, whereby an additional electrically insulating intermediate layer between the first (40) and second (42) load connection element is replaced at least in the region of the band-like portions (402, 422).

Dem ersten bandartigen Abschnitt (402) zugewandt weist das Druckzwischenstück (80) zwei Druckkörper (84) auf, die als Druckstege ausgebildet sind, wobei eine Anordnung, einer Mehrzahl von rotationssymmetrischen Drucknoppen in einer Reihe ebenso vorteilhaft sein kann. Erfindungsgemäß sind diese Druckkörper (84) mit dem ersten bandartigen Abschnitt (402) nur in teilflächigem Kontakt, wobei der linke Druckkörper annähernd fluchtend, mit in Druckrichtung darunter angeordneten Kontaktfüßen (400, 420, 440) vorgesehen ist. Die weitgehend symmetrische Anordnung des linken und rechten Druckkörpers (84) dient der gleichmäßigen Druckein- und Weiterleitung, dargestellt durch den Druckpfad (740) auf und über einen bandartigen Abschnitt (442) eines dritten Lastanschlusselements (44).Facing the first belt-like portion (402), the pressure intermediate piece (80) has two pressure bodies (84) which are designed as pressure webs, wherein an arrangement of a plurality of rotationally symmetrical pressure nubs in a row can also be advantageous. According to the invention, these pressure bodies (84) are provided with the first belt-like portion (402) only in partial area contact, wherein the left pressure body is provided approximately in alignment, with contact feet (400, 420, 440) arranged underneath in the pressure direction. The largely symmetrical arrangement of the left and right pressure hulls (84) serves to uniform Druckein- and forwarding, represented by the pressure path (740) and on a band-like portion (442) of a third load connection element (44).

Zwischen dem zweiten und dritten bandartigen Abschnitten (422, 442) ist hierzu eine weiteres Druckzwischenstück (80) vorgesehen, das flächig, aber nicht vollflächig auf dem dritten bandartigen Abschnitt (442) aufliegt und zum zweiten bandartigen Abschnitt (422) hin einen Drucksteg (84) aufweist, der seinerseits in Druckrichtung fluchtend zu den Kontaktfüßen (440) des dritten Lastanschlusselements (44) angeordnet ist um hierauf gezielt den Druck einzuleiten.For this purpose, between the second and third band-like sections (422, 442) there is provided another pressure intermediate piece (80) which rests on the third band-like section (442) flatly but not over the entire surface and forms a pressure ridge (84) towards the second band-like section (422) ), which in turn is arranged in the pressure direction in alignment with the contact feet (440) of the third load connection element (44) in order to selectively initiate the pressure thereon.

Zur Verdeutlichung der Druckverhältnisse in der Druckeinrichtung (80,90) und der Ausbreitung dieser Druckverhältnisse entlang dreier Druckpfade (700, 720, 740) dienen die diese Druckpfade symbolisierenden gestrichelten Linien. Der Vorteil der erfindungsgemäßen Ausgestaltung des Leistungshalbleitermoduls (1) liegt somit in der dezidierten Druckein- und Weiterleitung zur Verbesserung der Kontaktsicherheit aller Kontaktfüße (400, 420, 440) mit den Leiterbahnen (54) des Substrats (5).To clarify the pressure conditions in the pressure device (80,90) and the propagation of these pressure conditions along three pressure paths (700, 720, 740) are the dashed lines symbolizing these pressure paths. The advantage of the inventive design of the power semiconductor module (1) is thus in the dedicated Druckein- and forwarding to improve the contact reliability of all contact feet (400, 420, 440) with the tracks (54) of the substrate (5).

Fig. 2 zeigt analog Fig.1 wesentliche Elemente der Druckeinrichtung einer zweiten Ausgestaltung eines erfindungsgemäßen Leistungshalbleitermoduls (1). Dargestellt sind ausschließlich die jeweiligen bandartigen Abschnitte (402, 422, 442) und jeweiligen Kontaktfüße (400, 420, 440) von drei Lastanschlusselementen (40, 42, 44), ohne notwendige Einrichtung zur elektrischen Isolation der jeweiligen bandartigen Abschnitte. Der bandartige Abschnitt (402) des ersten Lastanschlusselements (40) weist als Druckübertragungseinrichtung zwei Verformungen (90) des bandartigen Abschnitts (402) selbst auf. Diese sind in Richtung der Zeichenebene jeweils als nach oben offene Rinne (92) mit zugeordnetem Drucksteg (94) auf der ihr gegenüber liegenden Seite ausgebildet. Fig. 2 shows analog Fig.1 essential elements of the printing device of a second embodiment of a power semiconductor module according to the invention (1). Shown are only the respective band-like portions (402, 422, 442) and respective contact feet (400, 420, 440) of three load connection elements (40, 42, 44), without necessary means for electrical insulation of the respective band-like portions. The band-like portion (402) of the first load connection element (40) has as Pressure transmission device two deformations (90) of the belt-like portion (402) itself on. These are formed in the direction of the plane in each case as an upwardly open channel (92) with associated pressure bar (94) on the opposite side.

In analoger Weise weist der bandartige Abschnitt (422) des zweiten Lastanschlusselementes (42) eine ebensolche Rinne (92), mit auf der ihr gegenüber liegenden Seite ausgebildetem, zugeordnetem Drucksteg (94) auf. Bei Druckeinleitung erfolgt die Druckverteilung mit gleicher Wirkung wiederum entlang der Druckpfade (700, 720, 740) gemäß Fig. 1.In an analogous manner, the band-like portion (422) of the second load connection element (42) on a similar groove (92), with on its opposite side formed, associated pressure ridge (94). With pressure introduction, the pressure distribution with the same effect again takes place along the pressure paths (700, 720, 740) according to FIG Fig. 1 ,

Fig. 3 zeigt analog Fig.1 wesentliche Elemente der Druckeinrichtung einer dritten Ausgestaltung eines erfindungsgemäßen Leistungshalbleitermoduls (1). Dargestellt sind ausschließlich die jeweiligen bandartigen Abschnitte (402, 422, 442) und Kontaktfüße (400, 420, 440) von drei Lastanschlusselementen, (40, 42, 44) ohne notwendige Einrichtung zur elektrischen Isolation der jeweiligen bandartigen Abschnitte. Der bandartige Abschnitt (422) des zweiten Lastanschlusselements (42) weist als Druckübertragungseinrichtung zwei Verformungen (90) des bandartigen Abschnitts selbst auf. Diese sind in Richtung der Zeichenebene jeweils als nach unten offen Rinne (92) mit jeweils zugeordnetem Drucksteg (94) auf der ihr gegenüber liegenden Seite ausgebildet. Die linke Verformung (90) ist hierbei analog Fig. 2 angeordnet, während die zweite Verformung (90) mittig in Druckrichtung fluchtend mit den Kontaktfüßen (440) des dritten Lastanschlusselements (44) angeordnet ist. Fig. 3 shows analog Fig.1 essential elements of the printing device of a third embodiment of a power semiconductor module according to the invention (1). Shown are only the respective band-like portions (402, 422, 442) and contact feet (400, 420, 440) of three load connection elements, (40, 42, 44) without necessary means for electrical insulation of the respective band-like portions. The band-like section (422) of the second load connection element (42) has as pressure transmission device two deformations (90) of the band-like section itself. These are formed in the direction of the plane in each case as a downwardly open channel (92), each associated with pressure ridge (94) on the opposite side. The left deformation (90) is analogous Fig. 2 arranged, while the second deformation (90) is arranged centrally in the printing direction in alignment with the contact feet (440) of the third load connection element (44).

Zur Druckweiterleitung vom zweiten (42) zum dritten Lastanschlusselement (44) ist zwischen diesen ein als Kunststoffformkörper (80) ausgebildetes Druckzwischenstück angeordnet. Dieser Kunststoffformkörper ist teilweise in der mittig angeordneten Rinne (92) des zweiten Lastanschlusselements (42) angeordnet, um ihn in seiner Lage zu fixieren. Bei dieser Ausgestaltung des erfindungsgemäßen Leistungshalbleitermoduls (1) ist es ausschließlich notwendige einen, hier den bandartigen Abschnitt (422) des zweiten Lastanschlusselement (42) gegenüber dem Stand der Technik weiterzubilden, da die Kombination eines Druckzwischenstücks (80) und dieses Lastanschlusselementes mit Verformung (90) bereits zur erfindungsgemäßen Verbesserung der Druckein- und Weiterleitung führt.For pressure transfer from the second (42) to the third load connection element (44), a pressure intermediate piece designed as a plastic molded body (80) is arranged between these. This plastic molding is partially arranged in the centrally arranged groove (92) of the second load connection element (42) in order to fix it in its position. In this embodiment of the power semiconductor module (1) according to the invention, it is only necessary to further develop the band-like portion (422) of the second load connection element (42) over the prior art, since the combination of a pressure intermediate piece (80) and this load connection element with deformation (90 ) already leads to the invention improvement of Druckein- and forwarding.

Fig. 4 und 5 zeigt zwei Ausgestaltungen eines beispielhaften Lastanschlusselementes (40) eines erfindungsgemäßen Leistungshalbleitermoduls (1) gemäß Fig. 2 in dreidimensionaler Darstellung. Dieses Lastanschlusselement (40) weist eine Kontakteinrichtung (404) zur externen elektrischen Verbindung des Leistungshalbleitermoduls (1) in dessen Fortsetzung den bandartigen Abschnitt (402) und von diesem ausgehend die Kontaktfüße (400) auf. Beide Ausgestaltungen gemäß Fig. 4 und 5 weisen in dem jeweiligen bandartigen Abschnitt prägetechnisch hergestellte Verformungen (90 a/b) mit jeweils einer Vertiefung (92 a/b) auf einer ersten Seite des bandartigen Abschnitts und jeweils einer dieser zugeordneten Erhebung (94 a/b) auf der gegenüberliegenden zweiten Seite des bandartigen Abschnitts auf. 4 and 5 shows two embodiments of an exemplary load connection element (40) of a power semiconductor module according to the invention (1) according to Fig. 2 in three-dimensional representation. This load connection element (40) has a contact device (404) for external electrical connection of the Power semiconductor module (1) in its continuation of the band-like portion (402) and starting from this, the contact feet (400). Both embodiments according to 4 and 5 have in the respective band-like portion embossing technically produced deformations (90 a / b) each having a recess (92 a / b) on a first side of the band-like portion and each associated with this elevation (94 a / b) on the opposite second side of the band-like section on.

In Fig. 4 sind diese Verformungen als Rinnen (92b) mit zugeordneten Druckstegen (94b) auf der gegenüberliegenden Seite ausgebildet, während gemäß Fig. 5 die Verformungen als rotationssymmetrische Vertiefung (92a) / Erhebung (94a) ausgebildet sind.In Fig. 4 these deformations are formed as grooves (92b) with associated pressure bridges (94b) on the opposite side, while according to Fig. 5 the deformations as a rotationally symmetrical recess (92a) / elevation (94a) are formed.

Claims (10)

Leistungshalbleitermodul (1) in Druckkontaktausführung mit mindestens einem Substrat (5), hierauf angeordneten Leistungshalbleiterbauelementen (60), einem Gehäuse (3) und nach außen führenden Lastanschlusselementen (40, 42, 44) und mit einer Druckeinrichtung (70), wobei das Substrat (5) auf seiner ersten dem Inneren des Leistungshalbleitermoduls zugewandten Hauptfläche Leiterbahnen (54) mit Lastpotential aufweist,
wobei ein erstes (40) und mindestens ein weiteres (42, 44) Lastanschlusselement jeweils als Metallformkörper mit einem bandartigen Abschnitt (402, 422, 442) und mit von diesem ausgehenden Kontaktfüßen (400, 420, 440) ausgebildet ist, der jeweilige bandartige Abschnitt (402, 422, 442) parallel zur Substratoberfläche und von dieser beabstandet angeordnet ist und die Kontaktfüße (400, 420, 440) von dem bandartigen Abschnitt (402, 422, 442) zum Substrat (5) reichen und dieses schaltungsgerecht kontaktieren, und
wobei die Druckübertragung von mindestens einem ersten bandartigen Abschnitt (402) auf einen weiteren benachbarten bandartigen Abschnitt (422) mittels einer Druckübertragungseinrichtung (80, 90) teilflächig erfolgt, und diese Druckübertragungseinrichtung (80, 90) entweder als ein Druckzwischenstück (80) und / oder als eine Verformung (90) des bandartigen Abschnitts (402, 422, 442) selbst ausgebildet ist.Power semiconductor module (1) in pressure contact design with at least one substrate (5), power semiconductor components (60) arranged thereon, a housing (3) and outwardly leading load connection elements (40, 42, 44) and with a pressure device (70), wherein the substrate ( 5) has conductor tracks (54) with load potential on its first main surface facing the interior of the power semiconductor module,
wherein a first (40) and at least one further (42, 44) load connection element is in each case formed as a metal shaped body with a band-like section (402, 422, 442) and with contact feet (400, 420, 440) extending therefrom, the respective band-like section (402, 422, 442) parallel to the substrate surface and spaced therefrom and the contact feet (400, 420, 440) from the ribbon-like portion (402, 422, 442) to the substrate (5) rich and contact this circuit, and
wherein the pressure transmission from at least one first belt-like portion (402) to another adjacent belt-like portion (422) by means of a pressure transmission means (80, 90) is made partially, and this pressure transmission means (80, 90) either as a pressure intermediate piece (80) and / or is formed as a deformation (90) of the band-like portion (402, 422, 442) itself. Leistungshalbleitermodul (1) nach Anspruch 1, wobei
die Verformung (90) des bandartigen Abschnitts (402, 422, 442) als eine prägetechnisch hergestellte Verformung (90) mit einer Vertiefung (92) auf einer ersten Seite des bandartigen Abschnitts (402, 422, 442) und einer dieser zugeordneten Erhebung (94) auf der gegenüberliegenden zweiten Seite des bandartigen Abschnitts (402, 422, 442) ausgebildet ist.Power semiconductor module (1) according to claim 1, wherein
the deformation (90) of the ribbon-like portion (402, 422, 442) as a stamped deformation (90) having a depression (92) on a first side of the ribbon-like portion (402, 422, 442) and a protrusion (94 ) is formed on the opposite second side of the band-like portion (402, 422, 442). Leistungshalbleitermodul (1) nach Anspruch 3, wobei
die Verformung (90) als rotationssymmetrische Vertiefung (92a) / Erhebung (94a) oder als Rinne (92b) mit zugeordnetem Drucksteg (94b) auf der ihr gegenüber liegenden Seite ausgebildet ist.Power semiconductor module (1) according to claim 3, wherein
the deformation (90) is formed as a rotationally symmetrical depression (92a) / elevation (94a) or as a groove (92b) with an associated compression web (94b) on the side opposite it. Leistungshalbleitermodul (1) nach Anspruch 1, wobei
das Druckzwischenstück (80) als ein Kunststoffformkörper ausgebildet ist.Power semiconductor module (1) according to claim 1, wherein
the pressure intermediate piece (80) is designed as a plastic molded body. Leistungshalbleitermodul (1) nach Anspruch 2, wobei
mindestens ein Druckzwischenstück (80) teilweise in einer Vertiefung (92 a/b) der Verformung (90) angeordnet ist.Power semiconductor module (1) according to claim 2, wherein
at least one pressure intermediate piece (80) partially in a recess (92 a / b) of the deformation (90) is arranged. Leistungshalbleitermodul (1) nach Anspruch 1, wobei
mindestens ein Druckzwischenstück (80) eine zugeordnete Hauptfläche eines bandartigen Abschnitts (402, 422, 442) vollständig oder teilweise bedeckt und, auf der dieser Hauptfläche abgewandten Seite, mindestens einen Druckkörper (84) aufweist.Power semiconductor module (1) according to claim 1, wherein
at least one pressure intermediate piece (80) has an associated main surface of a band-like portion (402, 422, 442) completely or partially covered and, on the side facing away from this main surface, at least one pressure body (84). Leistungshalbleitermodul (1) nach Anspruch 6, wobei
dieser Druckkörper (84) als rotationssymmetrische Drucknoppe oder als Drucksteg ausgebildet ist.Power semiconductor module (1) according to claim 6, wherein
this pressure body (84) is designed as a rotationally symmetrical pressure nub or as a pressure ridge. Leistungshalbleitermodul (1) nach Anspruch 6, wobei
das Druckzwischenstück (80) zur elektrischen Isolierung die zugeordnete Hauptfläche des bandartigen Abschnitts (402, 422, 442) bis zu den Rändern und über mindestens einen Rand hinaus bedeckt.Power semiconductor module (1) according to claim 6, wherein
the pressure interposer (80) for electrical insulation covers the associated major surface of the ribbon-like portion (402, 422, 442) to the edges and beyond at least one edge. Leistungshalbleitermodul (1) nach Anspruch 1, wobei
die Druckeinrichtung (70) ausgebildet ist als ein Druck aufbauendes Druckstück (72) und ein zwischen diesem Druckstück (72) und dem ersten Lastanschlusselement (40) angeordneten Druckspeicher (74), vorzugsweise ausgebildet als dauerelastisches Kissenelement.Power semiconductor module (1) according to claim 1, wherein
the pressure device (70) is designed as a pressure-building pressure piece (72) and a pressure accumulator (74) arranged between this pressure piece (72) and the first load connection element (40), preferably designed as a permanently elastic cushion element. Leistungshalbleitermodul (1) nach Anspruch 1, wobei
die teilflächige Druckübertragung derart ausgebildet ist, dass der Druck mittels der Druckübertragungseinrichtung (80, 90) im Wesentlichen in Druckrichtung fluchtend auf die Kontaktfüße (400, 420, 440) eingeleitet wird.Power semiconductor module (1) according to claim 1, wherein
the partial surface pressure transmission is designed such that the pressure by means of the pressure transmission device (80, 90) substantially in the printing direction in alignment with the contact feet (400, 420, 440) is introduced.
EP10187764A 2009-12-05 2010-10-15 Pressure-contacted high performance semiconductor module with some tape-like load connection elements Withdrawn EP2330623A1 (en)

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DE102016104283B4 (en) * 2016-03-09 2019-05-16 Semikron Elektronik Gmbh & Co. Kg Power semiconductor device with a power semiconductor module with a housing

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19719703A1 (en) 1997-05-09 1998-11-12 Eupec Gmbh & Co Kg Power semiconductor module with ceramic substrate
EP1818982A2 (en) * 2006-02-13 2007-08-15 SEMIKRON Elektronik GmbH & Co. KG Assembly of at least one power semiconductor module and a cooling element and associated method of manufacturing
DE102006006423A1 (en) 2006-02-13 2007-08-23 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module and associated manufacturing method
DE102007003587A1 (en) 2007-01-24 2008-08-07 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with pressure body

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6828600B2 (en) * 1997-05-09 2004-12-07 Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh Power semiconductor module with ceramic substrate
WO2006063539A1 (en) * 2004-12-17 2006-06-22 Siemens Aktiengesellschaft Semiconductor switching module
DE102006006425B4 (en) * 2006-02-13 2009-06-10 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module in pressure contact design
DE102006027481C5 (en) * 2006-06-14 2012-11-08 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with mutually electrically insulated connection elements

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19719703A1 (en) 1997-05-09 1998-11-12 Eupec Gmbh & Co Kg Power semiconductor module with ceramic substrate
EP1818982A2 (en) * 2006-02-13 2007-08-15 SEMIKRON Elektronik GmbH & Co. KG Assembly of at least one power semiconductor module and a cooling element and associated method of manufacturing
DE102006006423A1 (en) 2006-02-13 2007-08-23 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module and associated manufacturing method
DE102007003587A1 (en) 2007-01-24 2008-08-07 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with pressure body

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