EP2282339A1 - Power semiconductor module with a load connection terminal having a symmetrical current distribution - Google Patents
Power semiconductor module with a load connection terminal having a symmetrical current distribution Download PDFInfo
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- EP2282339A1 EP2282339A1 EP10166977A EP10166977A EP2282339A1 EP 2282339 A1 EP2282339 A1 EP 2282339A1 EP 10166977 A EP10166977 A EP 10166977A EP 10166977 A EP10166977 A EP 10166977A EP 2282339 A1 EP2282339 A1 EP 2282339A1
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- Prior art keywords
- power semiconductor
- band
- semiconductor module
- contact
- load connection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the invention describes a power semiconductor module, preferably in pressure contact design for arrangement on a cooling component with a power electronic circuit consisting of at least two subcircuits. Each of these subcircuits has at least one power semiconductor component arranged on a conductor track.
- a starting point of the invention is a power semiconductor module according to the DE 10 2006 006 425 A1 , This discloses a power semiconductor module in pressure contact design, for mounting on a cooling member, wherein it has outwardly leading load connection elements, which are each formed as a metal moldings having at least one band-like portion and a plurality of this outgoing Kunststoffcot whet.
- load connection elements serve by means of a contact device of the external contacting of the internal power electronic circuit.
- subcircuits typically each have at least one substrate with at least one power semiconductor component. It may be preferred to form such sub-circuits identical and to arrange symmetrically in series or in pairs to each other.
- the invention has the object of developing a power semiconductor module mentioned above such that in a plurality of power electronic subcircuits within the power semiconductor module, the power supply is formed symmetrically to all subcircuits.
- the inventive idea is based on a power semiconductor module for arrangement on a cooling component.
- the power semiconductor module in this case has an internal power electronic circuit, which consists of at least two subcircuits.
- each of these subcircuits has a substrate with electrically insulated conductor tracks with load potential.
- At least one power semiconductor component is arranged on at least one of these conductor tracks of each subcircuit.
- power semiconductor module has a housing and from the subcircuits leading to the outside load and auxiliary connection elements.
- At least one of these load connection elements is formed as a metal shaped body with a band-like portion having a plurality of contact feet extending from this portion and with a contact device for external connection.
- the at least one band-like portion of the respective load connection element is arranged parallel to the conductor tracks and spaced therefrom.
- For electrical contacting extends at least in each case a first contact foot of the band-like portion to a conductor track of the respective subcircuit.
- all subcircuits are connected via such contact feet with the band-like portion of the respective load connection element.
- a first partial current path extends from the contact device of the load connection element to a distribution region, as a partial region of the band-like section. From this distribution area of the band-like section, respectively second partial flow paths to the respective first contact feet.
- the first and the respective second partial current paths form overall current paths for symmetrical current introduction into the respective subcircuits.
- the respective total current paths have a length difference of less than 20 of 100 relative to one another.
- the band-like portion of the load connection element has at least one first cutout.
- the respective band-like section is formed in the vicinity of the distribution region at least to the first contact feet reaching completely symmetrical.
- the band-like section has at least one further cutout for producing the symmetry.
- each subcircuit is assigned further contact feet which are arranged symmetrically to each other and the further total current paths likewise have a respective difference in length of less than 20/100.
- Fig. 1 shows a three-dimensional representation of a power semiconductor module according to the invention.
- Fig. 2 shows a detail of a first power semiconductor module according to the invention in plan view.
- Fig. 3 shows a detail of a second power semiconductor module according to the invention in plan view.
- Fig. 4 shows a detail of a third power semiconductor module according to the invention in plan view.
- Fig. 5 shows a load connection element of the third power semiconductor module according to the invention in a three-dimensional view.
- Fig. 1 shows a three-dimensional representation of a power semiconductor module (1) according to the invention. Shown here is a plastic housing (3) with means (34) for attachment to a cooling component.
- the housing (3) has an integrally formed with this molded insulating body (30) having a Interposed layer forms, between the arranged below this intermediate layer substrates (5 a / b) and above this intermediate layer arranged strip-like portions (402) of load connection elements (40, 42, 44).
- auxiliary connection elements (80). It is particularly preferred in such pressure-contacted power semiconductor modules (1) to form the auxiliary connection elements as contact springs (80), preferably coil springs.
- These auxiliary connection elements connect the subcircuits with assigned, not shown, drivers for the power semiconductor module (1).
- the load connection elements (40, 42, 44) of the different load potentials are each in the form of metal moldings with an associated contact device (404) for external connection, at least one band-like section (402) running parallel to the substrate surface, and with a plurality of contact feet (400) ) educated.
- the respective load connection elements (40, 42, 44) are as far as necessary by means of an insulating plastic film (46) spaced from each other and electrically insulated from each other.
- the AC connection element (42) furthermore has a current sensor (410) arranged adjacent to the contact device.
- the contact feet (400) of the load connection elements (40, 42, 44) extend through the formed as guides recesses (32) of the Isolierstoffform stressess (30) to associated contact surfaces of the interconnects of the substrates (5 a / b) or arranged there power semiconductor components.
- At least one of the band-like sections (402) of the load connection elements (40, 42, 44) has a cutout which allows a symmetrization of the respective total current paths from the contact device (404) to the subcircuits (5 a / b) arranged on individual substrates (5 a / b). 50 a / b) is used. Further details are described in the following figures.
- Fig. 2 shows a detail of a first power semiconductor module according to the invention in plan view. Shown here is primarily a load connection element (40) with a contact device (404), the external connection to a recess, for example, to the arrangement of a screw connection having. Subsequent to the contact device (404), the load connection element (40) has a band-like section (402) which is arranged parallel to two substrates (5) with conductor tracks (52) and power semiconductor components (54) arranged thereon.
- these substrates (5 a / b) form the respective subcircuits (50 a / b) of the power electronic circuit of the power semiconductor module.
- the band-like portion (402) of the load connection element (40) contacts the conductor tracks (52) of both sub-circuits (50) by means of its contact feet (400).
- a first cutout (406a) is arranged in the course of the band-like section (402) above the first subcircuit (50a), whereby the total current path from the contact device (404) to the contact legs (400a) of the first subcircuit (50a ) is extended.
- the band-like portion (402) has a virtual distribution area (46) on which symmetrical to the sub-circuits (50 a / b) is arranged.
- the first overall current path (60a) is composed of a first partial current path (600a) extending from the contact device (402) to the distribution region (46) and a second partial current path (602a) extending from the distribution region (46) to the first contact legs (400a ) of the respective sub-circuits (50 a / b) is sufficient, together.
- further total current paths (60b) to further contact feet (400b) if a subcircuit (50a / b) is not only contacted by the first contact leg (400a).
- These further total current paths (60b) are formed for each pair, or more generally each group, of further contact legs (400b) respectively assigned to a subcircuit (50a / b) from the first subcircuit path (600b) and the respective second subflow path (602b ). All of these pairs or groups of further total current paths (60b) have a respective difference in length of less than 20/100.
- Fig. 3 shows a detail of a second power semiconductor module according to the invention in plan view.
- This power semiconductor module has four subcircuits (50 a / b / c / d), likewise arranged on a respective substrate (5 a / b / c / d).
- the illustration of the printed conductors and power semiconductor components is omitted here for clarity.
- the load connection element (40) in turn consists of the contact device (404), the band-like portion (402) and the contact feet (400).
- the respective first partial flow pomp (600a) extends from the load connection element (404) to a distribution region (46) arranged centrally on the band-like section (402). From this second sub-current paths (602a) to all own subcircuits (50a / b) are assigned first contact feet (400a).
- the first recesses (46) of the band-like portion (402) are arranged such that these second sub-current paths (602a) form a first total current path (60a) in sum with the respective first sub-current path (600a), and these have a length difference of less as 20 of 100 to each other.
- the band-like portion (402) in the vicinity of the distribution region (46) is symmetrically designed reaching at least up to the first contact feet (400a), for which purpose a further first cutout (406b) is provided in the band-like portion (402).
- a further first cutout (406b) is provided in the band-like portion (402).
- further total current paths (60b) to further contact pads (400b) which in turn are arranged symmetrically to the location of the distribution area (46). These further total current paths (60b) also have a respective difference in length of less than 20/100.
- Fig. 4 shows a detail of a third power semiconductor module according to the invention in plan view.
- the contact feet (400) are not laterally away from the band-like portion (402) of the load connection element (400) away but are quasi formed from this.
- the band-like portion (402) has second Feisparungen (408), wherein the contact feet (400) by bending away the freely saved material, see. this too Fig. 5 , are formed.
- this embodiment differs from that according to Fig. 2 in that the two subcircuits (50 a / b) are arranged on a common substrate (5).
- this in turn has an insulating main body and conductor tracks (52) arranged thereon.
- the power semiconductor components (54) are arranged on these printed conductors (52).
- the band-like section (402) of the load connection element (40) in turn has a first U-shaped cutout (406a) arranged around the contact legs (400a / b) associated with the first subcircuit (50a).
- This causes the current in a first partial current path (60a) first to flow to the distribution region (46) and then to flow from there into second partial current paths (602a) formed symmetrically to the distribution region (46) to the respective first contact feet (400a).
- total current paths (60 a / b) are achieved for the respective pairs of contact feet, which has a length difference of less than 20 of 100.
- This symmetry with a tolerance of 20 out of 100, applies in general for the first contact feet as well as for the pairs, or for groups comprising more than two subcircuits, further contact feet
- Fig. 5 shows a load connection element (40) of the third power semiconductor module according to the invention in three-dimensional view, wherein all the essential features Fig. 4 already described.
- the integral formation of the band-like portion (402) and the contact feet (400 a / b) is illustrated.
Abstract
Description
Die Erfindung beschreibt ein Leistungshalbleitermodul, vorzugsweise in Druckkontaktausführung zur Anordnung auf einem Kühlbauteil mit einer aus mindestens zwei Teilschaltungen bestehenden leistungselektronischen Schaltung. Jede dieser Teilschaltungen weist mindestens ein Leistungshalbleiterbauelement angeordnet auf einer Leiterbahn auf.The invention describes a power semiconductor module, preferably in pressure contact design for arrangement on a cooling component with a power electronic circuit consisting of at least two subcircuits. Each of these subcircuits has at least one power semiconductor component arranged on a conductor track.
Einen Ausgangspunkt der Erfindung bildet ein Leistungshalbleitermodul gemäß der
Es ist üblich und beispielhaft auch aus der
Der Erfindung liegt die Aufgabe zugrunde ein oben genanntes Leistungshalbleitermodul derart weiterzubilden, dass bei einer Mehrzahl von leistungselektronischen Teilschaltungen innerhalb des Leistungshalbleitermoduls die Stromzuführung symmetrisch zu allen Teilschaltungen ausgebildet ist.The invention has the object of developing a power semiconductor module mentioned above such that in a plurality of power electronic subcircuits within the power semiconductor module, the power supply is formed symmetrically to all subcircuits.
Die Aufgabe wird erfindungsgemäß gelöst, durch die Merkmale des Anspruchs 1. Bevorzugte Ausführungsformen sind in den abhängigen Ansprüchen beschrieben.The object is achieved according to the invention by the features of
Der erfinderische Gedanke geht aus von einem Leistungshalbleitermodul zur Anordnung auf einem Kühlbauteil. Das Leistungshalbleitermodul weist hierbei eine interne leistungselektronische Schaltung auf, die aus mindestens zwei Teilschaltungen besteht. Vorzugsweise weist jede dieser Teilschaltungen ein Substrat mit elektrisch voneinander isolierten Leiterbahnen mit Lastpotential auf. Auf mindestens einer dieser Leiterbahnen jeder Teilschaltung ist mindestens ein Leistungshalbleiterbauelement angeordneten. Weiterhin weist da Leistungshalbleitermodul ein Gehäuse und von den Teilschaltungen nach außen führenden Last- und Hilfsanschlusselemente auf.The inventive idea is based on a power semiconductor module for arrangement on a cooling component. The power semiconductor module in this case has an internal power electronic circuit, which consists of at least two subcircuits. Preferably, each of these subcircuits has a substrate with electrically insulated conductor tracks with load potential. At least one power semiconductor component is arranged on at least one of these conductor tracks of each subcircuit. Furthermore, since power semiconductor module has a housing and from the subcircuits leading to the outside load and auxiliary connection elements.
Mindestens eines dieser Lastanschlusselemente ist als ein Metallformkörper mit einem bandartigen Abschnitt mit einer Mehrzahl von diesem Abschnitt ausgehenden Kontaktfüßen und mit einer Kontakteinrichtung zur externen Verbindung ausgebildet. Es ist allerdings bevorzugt alle Lastanschlusselemente in gleicher Weise auszubilden und derart anzuordnen, dass die bandartigen Abschnitte parallel zueinander, voneinander beabstandet und elektrisch voneinander isoliert angeordnet sind und somit einen Stapel aus bilden.At least one of these load connection elements is formed as a metal shaped body with a band-like portion having a plurality of contact feet extending from this portion and with a contact device for external connection. However, it is preferred to form all the load connection elements in the same way and to arrange such that the band-like portions are parallel to each other, spaced from each other and electrically isolated from each other and thus form a stack.
Weiterhin ist der mindestens eine bandartige Abschnitt des jeweiligen Lastanschlusselements parallel zu den Leiterbahnen und von diesen beabstandet angeordnet. Zur elektrischen Kontaktierung reicht mindestens jeweils ein erster Kontaktfuß von dem bandartigen Abschnitt zu einer Leiterbahn der jeweiligen Teilschaltung. Vorzugsweise sind alle Teilschaltungen über derartige Kontaktfüße mit dem bandartigen Abschnitt des jeweiligen Lastanschlusselementes verbunden.Furthermore, the at least one band-like portion of the respective load connection element is arranged parallel to the conductor tracks and spaced therefrom. For electrical contacting extends at least in each case a first contact foot of the band-like portion to a conductor track of the respective subcircuit. Preferably, all subcircuits are connected via such contact feet with the band-like portion of the respective load connection element.
Erfindungsgemäß reicht ein erster Teilstrompfad von der Kontakteinrichtung des Lastanschlusselements zu einem Verteilungsbereich, als Teilbereich des bandartigen Abschnitts. Von diesem Verteilungsbereich des bandartigen Abschnitts reichen jeweils zweite Teilstrompfade zu den jeweiligen ersten Kontaktfüßen. Hierbei bilden der erste und die jeweiligen zweiten Teilstrompfad Gesamtstrompfade, zur symmetrischen Stromeinleitung in die jeweiligen Teilschaltungen, aus. Hierbei weisen die jeweiligen Gesamtstrompfade eine Längendifferenz von weniger als 20 von 100 zueinander auf. Zur Ausbildung derartiger Gesamtstrompfade weist der bandartige Abschnitt des Lastanschlusselements mindestens eine erste Freisparung auf.According to the invention, a first partial current path extends from the contact device of the load connection element to a distribution region, as a partial region of the band-like section. From this distribution area of the band-like section, respectively second partial flow paths to the respective first contact feet. In this case, the first and the respective second partial current paths form overall current paths for symmetrical current introduction into the respective subcircuits. In this case, the respective total current paths have a length difference of less than 20 of 100 relative to one another. To form such total current paths, the band-like portion of the load connection element has at least one first cutout.
Es ist hierbei bevorzugt, wenn der jeweilige bandartige Abschnitt in der Umgebung des Verteilungsbereichs mindestens bis zu den ersten Kontaktfüßen reichend vollständig symmetrisch ausgebildet ist. Hierzu ist es vorteilhaft wenn der bandartige Abschnitt mindestens eine weitere Freisparung zu Herstellung der Symmetrie aufweist.It is preferred in this case if the respective band-like section is formed in the vicinity of the distribution region at least to the first contact feet reaching completely symmetrical. For this purpose, it is advantageous if the band-like section has at least one further cutout for producing the symmetry.
Es kann ebenso bevorzugt sein, wenn jeder Teilschaltung weitere zueinander symmetrisch angeordnete Kontaktfüße zugeordnet sind und die weiteren Gesamtstrompfade ebenfalls eine jeweilige Längendifferenz von weniger als 20 von 100 aufweisen.It may also be preferred if each subcircuit is assigned further contact feet which are arranged symmetrically to each other and the further total current paths likewise have a respective difference in length of less than 20/100.
Die erfinderische Lösung wird an Hand der Ausführungsbeispiele der
Weiterhin weist das Gehäuse (3) domartige Durchführungen (38) für Hilfsanschlusselemente (80) auf. Es ist besonders bevorzugt in derartigen druckkontaktierten Leistungshalbleitermodulen (1) die Hilfsanschlusselemente als Kontaktfedern (80), vorzugsweise Schraubenfedern, auszubilden. Diese Hilfsanschlusselemente verbinden die Teilschaltungen mit zugeordneten, nicht dargestellten, Treiber für das Leistungshalbleitermodul (1). Hierzu weisen die bandartige Abschnitte (402) der Lastanschlusselemente (40, 42, 44) die Symmetrie nicht brechende Ausnehmungen zur Durchführung dieser Schraubenfedern auf.Furthermore, the housing (3) on dome-like bushings (38) for auxiliary connection elements (80). It is particularly preferred in such pressure-contacted power semiconductor modules (1) to form the auxiliary connection elements as contact springs (80), preferably coil springs. These auxiliary connection elements connect the subcircuits with assigned, not shown, drivers for the power semiconductor module (1). For this purpose, the band-like portions (402) of the load connection elements (40, 42, 44) on the symmetry non-breaking recesses for performing these coil springs.
Die Lastanschlusselemente (40, 42, 44) der verschiedenen Lastpotentiale sind jeweils als Metallformkörper mit einer zugeordneten Kontakteinrichtung (404) zur externen Verbindung, mindestens einem bandartigen parallel zur Substratoberfläche verlaufenden Abschnitt (402), sowie mit einer Mehrzahl von diesem Abschnitt ausgehenden Kontaktfüßen (400) ausgebildet. Die jeweiligen Lastanschlusselemente (40, 42, 44) sind soweit notwendig mittels eine isolierenden Kunststofffolie (46) voneinander beabstandet und gegeneinander elektrisch isoliert. Das Wechselstromanschlusselement (42) weist weiterhin einen benachbart zur Kontakteinrichtung angeordneten Stromsensor (410) auf.The load connection elements (40, 42, 44) of the different load potentials are each in the form of metal moldings with an associated contact device (404) for external connection, at least one band-like section (402) running parallel to the substrate surface, and with a plurality of contact feet (400) ) educated. The respective load connection elements (40, 42, 44) are as far as necessary by means of an insulating plastic film (46) spaced from each other and electrically insulated from each other. The AC connection element (42) furthermore has a current sensor (410) arranged adjacent to the contact device.
Die Kontaktfüße (400) der Lastanschlusselemente (40, 42, 44) reichen durch die als Führungen ausgebildeten Ausnehmungen (32) des Isolierstoffformkörpers (30) zu zugeordneten Kontaktflächen der Leiterbahnen der Substrate (5 a/b) bzw. zu dort angeordneten Leistungshalbleiterbauelementen.The contact feet (400) of the load connection elements (40, 42, 44) extend through the formed as guides recesses (32) of the Isolierstoffformkörpers (30) to associated contact surfaces of the interconnects of the substrates (5 a / b) or arranged there power semiconductor components.
Mindestens einer der bandartigen Abschnitte (402) der Lastanschlusselemente (40, 42, 44) weist erfindungsgemäß eine Freisparung auf, die für eine Symmetrierung der jeweiligen Gesamtstrompfade von der Kontakteinrichtung (404) zu den auf einzelnen Substraten (5 a/b) angeordneten Teilschaltungen (50 a/b) dient. Weitere Einzelheiten sind in den folgenden Figuren beschrieben.According to the invention, at least one of the band-like sections (402) of the load connection elements (40, 42, 44) has a cutout which allows a symmetrization of the respective total current paths from the contact device (404) to the subcircuits (5 a / b) arranged on individual substrates (5 a / b). 50 a / b) is used. Further details are described in the following figures.
Diese Substrate (5 a/b) bilden hier die jeweiligen Teilschaltungen (50 a/b) der leistungselektronischen Schaltung des Leistungshalbleitermoduls aus. Der bandartige Abschnitt (402) des Lastanschlusselements (40) kontaktiert mittels seiner Kontaktfüße (400) die Leiterbahnen (52) beider Teilschaltungen (50).Here, these substrates (5 a / b) form the respective subcircuits (50 a / b) of the power electronic circuit of the power semiconductor module. The band-like portion (402) of the load connection element (40) contacts the conductor tracks (52) of both sub-circuits (50) by means of its contact feet (400).
Für eine gleichmäßige Belastung der Leistungshalbleiterbauelemente (54), die häufig in derartigen leistungselektronischen Schaltungen parallel geschaltet sind ist es wesentlich, die Stromzuführung zu symmetrisieren. Dies wird hier erfindungsgemäß erzielt indem im Verlauf des bandartigen Abschnitts (402) oberhalb der ersten Teilschaltung (50a) eine erste Freisparung (406a) angeordnet ist, wodurch der Gesamtstrompfad von der Kontakteinrichtung (404) zu den Kontaktfüßen (400a) der ersten Teilschaltung (50a) verlängert wird.For a uniform load of the power semiconductor components (54), which are often connected in parallel in such power electronic circuits, it is essential to symmetrize the power supply. This is achieved according to the invention in that a first cutout (406a) is arranged in the course of the band-like section (402) above the first subcircuit (50a), whereby the total current path from the contact device (404) to the contact legs (400a) of the first subcircuit (50a ) is extended.
Durch diese Maßnahme ist der jeweilige erste Gesamtstrompfad (60a) von der Kontakteinrichtung (404) zu den ersten einer Teilschaltung (50 a/b) zugeordneten Kontaktfüßen (400a) bis auf eine geringe Toleranz von weniger als 20 von 100 gleich. Hierzu weist der bandartige Abschnitt (402) einen virtuellen Verteilungsbereich (46) auf der symmetrisch zu den Teilschaltungen (50 a/b) angeordnet ist. Der erste Gesamtstrompfad (60a) setzt sich aus einem ersten Teilstrompfad (600a), der von der Kontakteinrichtung (402) zum Verteilungsbereich (46) reicht und von einem zweiten Teilstrompfad (602a), der vom Verteilungsbereich (46) zu den ersten Kontaktfüßen (400a) der jeweiligen Teilschaltungen (50 a/b) reicht, zusammen.By this measure, the respective first total current path (60a) from the contact device (404) to the first of a subcircuit (50 a / b) associated contact feet (400a) to a small tolerance of less than 20 of 100 is the same. For this purpose, the band-like portion (402) has a virtual distribution area (46) on which symmetrical to the sub-circuits (50 a / b) is arranged. The first overall current path (60a) is composed of a first partial current path (600a) extending from the contact device (402) to the distribution region (46) and a second partial current path (602a) extending from the distribution region (46) to the first contact legs (400a ) of the respective sub-circuits (50 a / b) is sufficient, together.
Weiterhin dargestellt sind weitere Gesamtstrompfade (60b) zu weiteren Kontaktfüße (400b), falls eine Teilschaltung (50 a/b) nicht nur von dem ersten Kontaktfuß (400a) kontaktiert ist. Diese weiteren Gesamtstrompfade (60b) werden für jedes Paar, oder allgemeiner jede Gruppe, von weiteren Kontaktfüßen (400b) die jeweils zu einer Teilschaltung (50 a/b) zugeordnete sind gebildet aus dem ersten Teilstrompfad (600b) und dem jeweiligen zweiten Teilstrompfad (602b). Alle diese Paare oder Gruppen von weiteren Gesamtstrompfaden (60b) weisen untereinander eine jeweilige Längendifferenz von weniger als 20 von 100 auf.Further illustrated are further total current paths (60b) to further contact feet (400b) if a subcircuit (50a / b) is not only contacted by the first contact leg (400a). These further total current paths (60b) are formed for each pair, or more generally each group, of further contact legs (400b) respectively assigned to a subcircuit (50a / b) from the first subcircuit path (600b) and the respective second subflow path (602b ). All of these pairs or groups of further total current paths (60b) have a respective difference in length of less than 20/100.
Das Lastanschlusselement (40) besteht wiederum aus der Kontakteinrichtung (404), dem bandartigen Abschnitt (402) und den Kontaktfüßen (400). Der jeweils erste Teilstrompfand (600a) reicht von dem Lastanschlusselement (404) zu einem zentral auf dem bandartigen Abschnitt (402) angeordneten Verteilungsbereich (46). Von diesem aus reichen zweite Teilstrompfade (602a) zu allen eigenen Teilschaltungen (50 a/b) zugeordneten ersten Kontaktfüßen (400a). Die ersten Freisparungen (46) des bandartigen Abschnitts (402) sind derart angeordnet, dass diese zweiten Teilstrompfade (602a), die in der Summe mit dem jeweiligen ersten Teilstrompfad (600a) jeweils einen ersten Gesamtstrompfad (60a) bilden und diese eine Längendifferenz von weniger als 20 von 100 zueinander aufweisen.The load connection element (40) in turn consists of the contact device (404), the band-like portion (402) and the contact feet (400). The respective first partial flow pomp (600a) extends from the load connection element (404) to a distribution region (46) arranged centrally on the band-like section (402). From this second sub-current paths (602a) to all own subcircuits (50a / b) are assigned first contact feet (400a). The first recesses (46) of the band-like portion (402) are arranged such that these second sub-current paths (602a) form a first total current path (60a) in sum with the respective first sub-current path (600a), and these have a length difference of less as 20 of 100 to each other.
Durch diese Ausgestaltung ist der bandartige Abschnitt (402) in der Umgebung des Verteilungsbereichs (46) mindestens bis zu den ersten Kontaktfüßen (400a) reichend symmetrisch ausgebildet ist wozu eine weitere erste Freisparung (406b) in dem bandartigen Abschnitt (402) vorgesehen ist. Wobei für diese Symmetrie derjenige Bereiche des bandartigen Abschnitts (402) wesentlich sind, in denen die zweiten Teilstrompfade (602a) verlaufen.As a result of this embodiment, the band-like portion (402) in the vicinity of the distribution region (46) is symmetrically designed reaching at least up to the first contact feet (400a), for which purpose a further first cutout (406b) is provided in the band-like portion (402). Wherein, for this symmetry, those areas of the band-like section (402) in which the second partial-current paths (602a) run are essential.
Ebenfalls dargestellt sind weitere Gesamtstrompfade (60b) zu weiteren Kontaktfüße (400b) die wiederum symmetrisch zur Lage des Verteilungsbereichs (46) angeordnet sind. Auch diese weiteren Gesamtstrompfade (60b) weisen eine jeweilige Längendifferenz von weniger als 20 von 100 auf.Also shown are further total current paths (60b) to further contact pads (400b) which in turn are arranged symmetrically to the location of the distribution area (46). These further total current paths (60b) also have a respective difference in length of less than 20/100.
Weiterhin unterscheidet sich diese Ausgestaltung von derjenigen gemäß
Zur symmetrischen Stromversorgung weist der bandartige Abschnitt (402) des Lastanschlusselements (40) wiederum eine erste U-förmige um die der ersten Teilschaltung (50a) zugeordneten Kontaktfüßen (400 a/b) angeordnete Freisparung (406a) auf. Diese bewirkt, dass der Strom in einem ersten Teilstrompfad (60a) erst zu dem Verteilungsbereich (46) fließen muss um dann von dort in zweiten symmetrisch zum Verteilungsbereich (46) ausgebildeten Teilstrompfaden (602a) zu den jeweiligen ersten Kontaktfüßen (400a) fließen kann. Analoges gilt für weitere Gesamtstrompfade (60b) zu weiteren Kontaktfüßen (400b). Somit werden auch in dieser Ausbildung für die jeweiligen Kontaktfußpaare Gesamtstrompfade (60 a/b) erreicht, die eine Längendifferenz von weniger als 20 von 100 aufweist. Diese Symmetrie, mit einer Toleranz von 20 von 100 gilt allgemein jeweils für die ersten Kontaktfüße sowie für die Paare, oder bei mehr als zwei Teilschaltungen entsprechenden Gruppen, weiterer KontaktfüßeFor the symmetrical power supply, the band-like section (402) of the load connection element (40) in turn has a first U-shaped cutout (406a) arranged around the contact legs (400a / b) associated with the first subcircuit (50a). This causes the current in a first partial current path (60a) first to flow to the distribution region (46) and then to flow from there into second partial current paths (602a) formed symmetrically to the distribution region (46) to the respective first contact feet (400a). The same applies to further total current paths (60b) to further contact feet (400b). Thus, in this embodiment, total current paths (60 a / b) are achieved for the respective pairs of contact feet, which has a length difference of less than 20 of 100. This symmetry, with a tolerance of 20 out of 100, applies in general for the first contact feet as well as for the pairs, or for groups comprising more than two subcircuits, further contact feet
Claims (8)
wobei mindestens ein Lastanschlusselement (40, 42, 44) als Metallformkörper mit einem bandartigen Abschnitt (402) mit einer Mehrzahl von diesem Abschnitt ausgehenden Kontaktfüßen (400 a/b) und mit einer Kontakteinrichtung (404) zur externen Verbindung ausgebildet ist, dieser bandartige Abschnitt (402) parallel zu den Leiterbahnen und von diesen beabstandet angeordnet ist und mindestens jeweils ein erster Kontaktfuß (400a) von dem bandartigen Abschnitt (402) zur elektrischen Kontaktierung zu einer Leiterbahnen der jeweiligen Teilschaltung (50) reicht wobei ein erster Teilstrompfad (600a) von der Kontakteinrichtung (404) zu einem Verteilungsbereich (46) des bandartigen Abschnitts (402) reicht und jeweils zweite Teilstrompfade (602a) vom Verteilungsbereich (46) zu den jeweiligen ersten Kontaktfüßen (400a) reichen und die jeweiligen ersten Gesamtstrompfade (60a), zur symmetrischen Stromeinleitung in die jeweiligen Teilschaltungen (50 a/b), gebildet sind aus dem ersten (600a) und zweiten (602a) Teilstrompfad, wobei die jeweiligen Gesamtstrompfade (60a) eine Längendifferenz von weniger als 20 von 100 zueinander aufweisen und wobei der bandartige Abschnitt (402) hierzu mindestens eine erste Freisparung (406a) aufweist.Power semiconductor module (1), for arrangement on a cooling component, with at least two power electronic subcircuits (50 a / b / c / d), each with at least one on conductor tracks (52) with load potential of the subcircuits arranged power semiconductor devices (54), a housing (3 ) and outgoing load (40, 42, 44) and auxiliary connection elements (80)
wherein at least one load connection element (40, 42, 44) is formed as a metal molding with a band-like portion (402) having a plurality of this section outgoing contact feet (400 a / b) and with a contact device (404) for external connection, this band-like portion (402) is arranged parallel to the interconnects and spaced therefrom and at least in each case a first contact foot (400a) extends from the band-like section (402) for electrical contacting to a strip conductor of the respective subcircuit (50), wherein a first partial circuit path (600a) of the contact means (404) extends to a distribution region (46) of the ribbon-like portion (402) and each second sub-current paths (602a) from the distribution region (46) to the respective first contact legs (400a) and the respective first total current paths (60a), to the symmetrical Current introduction into the respective subcircuits (50 a / b), formed from the first (600 a) and two The partial current path (602a) has a partial current path (60a), wherein the respective total current paths (60a) have a length difference of less than 20 of 100 relative to one another, and wherein the band-like section (402) has at least one first cutout (406a) for this purpose.
wobei jede Teilschaltung (50 a/b) als ein Substrat (5) mit einem isolierenden Grundkörper und hierauf angeordneten Leiterbahnen (52) ausgebildet ist.Power semiconductor module according to claim 1,
wherein each subcircuit (50 a / b) is formed as a substrate (5) with an insulating base body and conductor tracks (52) arranged thereon.
wobei der bandartige Abschnitt (402) in der Umgebung des Verteilungsbereichs (46) mindestens bis zu den ersten Kontaktfüßen (400a) reichend symmetrisch ausgebildet ist und hierzu mindestens eine weitere erste Freisparung (406b) in dem bandartigen Abschnitt vorgesehen ist.Power semiconductor module according to claim 1,
wherein the band-like portion (402) in the vicinity of the distribution region (46) at least to the first contact feet (400a) is symmetrically formed reaching and at least one further first recess (406b) is provided in the band-like portion.
wobei jeder Teilschaltung (50 a/b) weitere zueinander symmetrisch angeordnete Kontaktfüße (400b) zugeordnet sind und die weiteren Gesamtstrompfade (60b) ebenfalls eine jeweilige Längendifferenz von weniger als 20 von 100 aufweisen.Power semiconductor module according to claim 1,
wherein each subcircuit (50 a / b) is associated with further mutually symmetrically arranged contact feet (400b) and the further total current paths (60b) likewise have a respective length difference of less than 20/100.
wobei der bandartige Abschnitt (402) und die Kontaktfüße (400) einstückig ausgebildet sind.Power semiconductor module according to claim 1,
wherein the band-like portion (402) and the contact feet (400) are integrally formed.
wobei der mindestens eine bandartige Abschnitt (402) der Lastanschlusselemente (40, 42, 44) Ausnehmungen zur Durchführung von als Schraubenfedern ausgebildeten Hilfsanschlusselemente (80) aufweisen.Power semiconductor module (1) according to claim 1
wherein the at least one band-like portion (402) of the load connection elements (40, 42, 44) has recesses for the passage of auxiliary connection elements (80) designed as helical springs.
wobei eine Mehrzahl gleichartiger Lastanschlusselemente (40, 42, 44) vorgesehen sind und deren bandartige Abschnitte parallel zueinander, voneinander beabstandet und elektrisch voneinander isoliert angeordnet sind und einen Stapel bilden.Power semiconductor module according to claim 1,
wherein a plurality of similar load connection elements (40, 42, 44) are provided and their band-like portions are parallel to each other, spaced from each other and electrically isolated from each other and form a stack.
wobei eine Druckeinrichtung auf den mindestens einen bandartigen Abschnitt (402) der Lastanschlusselemente (40, 42, 44) und hierüber auf die Kontaktfüße (400) Druck ausübt zu deren elektrisch leitender Verbindung mit zugeordneten Leiterbahnen oder Leistungshalbleiterbauelementen auf dem Substrat (5 a/b).Power semiconductor module (1) according to claim 1
wherein a pressure device on the at least one ribbon-like portion (402) of the load connection elements (40, 42, 44) and on the contact feet (400) exerts pressure to the electrically conductive connection with associated conductor tracks or power semiconductor components on the substrate (5 a / b) ,
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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DE102009035819A DE102009035819A1 (en) | 2009-08-01 | 2009-08-01 | Power semiconductor module with current-symmetrical load connection element |
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EP2282339A1 true EP2282339A1 (en) | 2011-02-09 |
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EP10166977A Withdrawn EP2282339A1 (en) | 2009-08-01 | 2010-06-23 | Power semiconductor module with a load connection terminal having a symmetrical current distribution |
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EP (1) | EP2282339A1 (en) |
CN (1) | CN101989597A (en) |
DE (1) | DE102009035819A1 (en) |
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EP3104507A1 (en) | 2015-06-12 | 2016-12-14 | ABB Technology AG | Terminal arrangement for a power semiconductor module |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0667641A1 (en) * | 1994-02-14 | 1995-08-16 | Delco Electronics Corporation | Linear dual switch module |
US5512790A (en) * | 1994-07-21 | 1996-04-30 | Delco Electronics Corporation | Triaxial double switch module |
EP0828341A2 (en) * | 1996-09-06 | 1998-03-11 | Hitachi, Ltd. | Modular type power semiconductor apparatus |
DE10333329A1 (en) | 2003-07-23 | 2005-03-10 | Semikron Elektronik Gmbh | Power semiconductor module with rigid base plate |
DE102006006425A1 (en) | 2006-02-13 | 2007-08-23 | Semikron Elektronik Gmbh & Co. Kg | Power semiconductor module in pressure contact design |
EP2071626A1 (en) * | 2007-12-11 | 2009-06-17 | ABB Research Ltd. | Semiconductor module and connection terminal device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69535775D1 (en) * | 1994-10-07 | 2008-08-07 | Hitachi Ltd | Semiconductor arrangement with a plurality of semiconductor elements |
DE19519538A1 (en) * | 1995-05-27 | 1996-11-28 | Export Contor Ausenhandelsgese | Power semiconductor circuit with multiple paired power semiconductor devices |
JP3396566B2 (en) * | 1995-10-25 | 2003-04-14 | 三菱電機株式会社 | Semiconductor device |
-
2009
- 2009-08-01 DE DE102009035819A patent/DE102009035819A1/en not_active Withdrawn
-
2010
- 2010-06-23 EP EP10166977A patent/EP2282339A1/en not_active Withdrawn
- 2010-07-29 CN CN2010102421219A patent/CN101989597A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0667641A1 (en) * | 1994-02-14 | 1995-08-16 | Delco Electronics Corporation | Linear dual switch module |
US5512790A (en) * | 1994-07-21 | 1996-04-30 | Delco Electronics Corporation | Triaxial double switch module |
EP0828341A2 (en) * | 1996-09-06 | 1998-03-11 | Hitachi, Ltd. | Modular type power semiconductor apparatus |
DE10333329A1 (en) | 2003-07-23 | 2005-03-10 | Semikron Elektronik Gmbh | Power semiconductor module with rigid base plate |
DE102006006425A1 (en) | 2006-02-13 | 2007-08-23 | Semikron Elektronik Gmbh & Co. Kg | Power semiconductor module in pressure contact design |
EP2071626A1 (en) * | 2007-12-11 | 2009-06-17 | ABB Research Ltd. | Semiconductor module and connection terminal device |
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DE102009035819A1 (en) | 2011-02-03 |
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