EP2250664A4 - HIGH-SURFACE FLEXIBLE ELECTRONIC DEVICES BASED ON SEMICONDUCTORS, OF TEXTURE [100] OR [110] AND ALIGNED - Google Patents
HIGH-SURFACE FLEXIBLE ELECTRONIC DEVICES BASED ON SEMICONDUCTORS, OF TEXTURE [100] OR [110] AND ALIGNEDInfo
- Publication number
- EP2250664A4 EP2250664A4 EP08871705.3A EP08871705A EP2250664A4 EP 2250664 A4 EP2250664 A4 EP 2250664A4 EP 08871705 A EP08871705 A EP 08871705A EP 2250664 A4 EP2250664 A4 EP 2250664A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- aligned
- semiconductor
- flexible
- area
- electronic devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/122—Single quantum well structures
- H01L29/127—Quantum box structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/011,454 US8987736B2 (en) | 2000-07-10 | 2008-01-28 | [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices |
PCT/US2008/002944 WO2008112115A1 (en) | 2007-03-08 | 2008-03-06 | Novel, semiconductor-based, large-area, flexible, electronic devices |
PCT/US2008/010513 WO2009096932A1 (en) | 2008-01-28 | 2008-09-09 | [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2250664A1 EP2250664A1 (en) | 2010-11-17 |
EP2250664A4 true EP2250664A4 (en) | 2013-07-17 |
Family
ID=40913073
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP08871705.3A Ceased EP2250664A4 (en) | 2008-01-28 | 2008-09-09 | HIGH-SURFACE FLEXIBLE ELECTRONIC DEVICES BASED ON SEMICONDUCTORS, OF TEXTURE [100] OR [110] AND ALIGNED |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP2250664A4 (zh) |
CN (1) | CN101981685B (zh) |
AU (1) | AU2008349510B2 (zh) |
CA (1) | CA2745269A1 (zh) |
HK (1) | HK1150095A1 (zh) |
WO (1) | WO2009096932A1 (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8961687B2 (en) | 2009-08-31 | 2015-02-24 | Alliance For Sustainable Energy, Llc | Lattice matched crystalline substrates for cubic nitride semiconductor growth |
US8575471B2 (en) | 2009-08-31 | 2013-11-05 | Alliance For Sustainable Energy, Llc | Lattice matched semiconductor growth on crystalline metallic substrates |
KR20130138657A (ko) | 2010-06-24 | 2013-12-19 | 글로 에이비 | 배향된 나노와이어 성장을 위해 버퍼 층을 갖는 기판 |
JP5817327B2 (ja) | 2010-09-29 | 2015-11-18 | 東ソー株式会社 | 酸化物焼結体、その製造方法、それを用いて得られる酸化物透明導電膜及び太陽電池 |
US9425249B2 (en) | 2010-12-01 | 2016-08-23 | Alliance For Sustainable Energy, Llc | Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers |
US9041027B2 (en) | 2010-12-01 | 2015-05-26 | Alliance For Sustainable Energy, Llc | Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates |
TWI602315B (zh) * | 2013-03-08 | 2017-10-11 | 索泰克公司 | 具有經組構成效能更佳之低帶隙主動層之感光元件及相關方法 |
CN106575667B (zh) * | 2014-07-02 | 2020-07-31 | 哥本哈根大学 | 半导体约瑟夫森结及其相关的传输子量子位 |
US20160247886A1 (en) * | 2015-02-19 | 2016-08-25 | Hermes-Epitek Corp. | Semiconductor template and manufacturing method thereof |
WO2018080033A1 (ko) * | 2016-10-25 | 2018-05-03 | 삼성에스디아이 주식회사 | 감온 소자를 위한 고정 구조를 갖는 전지 모듈 |
CN109103230B (zh) * | 2018-08-27 | 2022-02-08 | 武汉天马微电子有限公司 | 一种oled显示面板、oled显示面板的制作方法及显示装置 |
CN109285919A (zh) * | 2018-09-28 | 2019-01-29 | 王敏 | 一种铜铟镓硒太阳能电池薄膜缓冲层材料的制备方法 |
CN109449223B (zh) * | 2018-10-26 | 2019-11-29 | 超晶科技(北京)有限公司 | 铟镓氮铋材料和使用该材料的激光器和探测器及制备方法 |
CN110911510B (zh) * | 2019-11-20 | 2021-02-26 | 电子科技大学中山学院 | 一种含超晶格结构的硅基氮化物五结太阳电池 |
CN112510122B (zh) * | 2021-02-07 | 2021-07-06 | 中山德华芯片技术有限公司 | 一种免切割的柔性砷化镓太阳电池及其制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6872988B1 (en) * | 2004-03-23 | 2005-03-29 | Ut-Battelle, Llc | Semiconductor films on flexible iridium substrates |
US20070044832A1 (en) * | 2005-08-25 | 2007-03-01 | Fritzemeier Leslie G | Photovoltaic template |
US20090038714A1 (en) * | 2007-08-08 | 2009-02-12 | Ut-Battelle, Llc | Strong, non-magnetic, cube textured alloy substrates |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5304342A (en) * | 1992-06-11 | 1994-04-19 | Hall Jr H Tracy | Carbide/metal composite material and a process therefor |
US5872080A (en) * | 1995-04-19 | 1999-02-16 | The Regents Of The University Of California | High temperature superconducting thick films |
US5994156A (en) * | 1997-09-12 | 1999-11-30 | Sharp Laboratories Of America, Inc. | Method of making gate and source lines in TFT LCD panels using pure aluminum metal |
KR100352976B1 (ko) * | 1999-12-24 | 2002-09-18 | 한국기계연구원 | 전기도금법에 의한 2축 집합조직을 갖는 니켈 도금층 및 그 제조방법 |
US6455166B1 (en) * | 2000-05-11 | 2002-09-24 | The University Of Chicago | Metallic substrates for high temperature superconductors |
US6784139B1 (en) * | 2000-07-10 | 2004-08-31 | Applied Thin Films, Inc. | Conductive and robust nitride buffer layers on biaxially textured substrates |
US6617283B2 (en) * | 2001-06-22 | 2003-09-09 | Ut-Battelle, Llc | Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom |
WO2005055285A2 (en) * | 2003-12-01 | 2005-06-16 | The Regents Of The University Of California | Multiband semiconductor compositions for photovoltaic devices |
US20060208257A1 (en) * | 2005-03-15 | 2006-09-21 | Branz Howard M | Method for low-temperature, hetero-epitaxial growth of thin film cSi on amorphous and multi-crystalline substrates and c-Si devices on amorphous, multi-crystalline, and crystalline substrates |
WO2009096931A1 (en) * | 2008-01-28 | 2009-08-06 | Amit Goyal | Semiconductor-based large-area flexible electronic devices |
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2008
- 2008-09-09 CA CA2745269A patent/CA2745269A1/en not_active Abandoned
- 2008-09-09 AU AU2008349510A patent/AU2008349510B2/en not_active Ceased
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6872988B1 (en) * | 2004-03-23 | 2005-03-29 | Ut-Battelle, Llc | Semiconductor films on flexible iridium substrates |
US20070044832A1 (en) * | 2005-08-25 | 2007-03-01 | Fritzemeier Leslie G | Photovoltaic template |
US20090038714A1 (en) * | 2007-08-08 | 2009-02-12 | Ut-Battelle, Llc | Strong, non-magnetic, cube textured alloy substrates |
Non-Patent Citations (23)
Title |
---|
7TH INTERNATIONAL CONFERENCE ON INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, vol. 207-2091, MATERIALS SCIENCE FORUM TRANS TECH PUBLICATIONS SWITZERLAND, pages 233 - 236, ISSN: 0255-5476 * |
ANONYMOUS: "Bending moments and beam curvatures", UNIVERSITY OF CAMBRIDGE, Retrieved from the Internet <URL:http://www.doitpoms.ac.uk/tlplib/beam_bending/bend_moments.php> [retrieved on 20151018] * |
BELENCHUK A ET AL: "Growth of (111)-oriented PbTe films on Si(001) using a BaF2 buffer", THIN SOLID FILMS ELSEVIER SWITZERLAND, vol. 358, no. 1-2, 10 January 2000 (2000-01-10), pages 277 - 282, ISSN: 0040-6090 * |
CHAMBERS S A ET AL: "Growth and structure of MBE grown TiO2 anatase films with rutile nano-crystallites", SURFACE SCIENCE ELSEVIER NETHERLANDS, vol. 601, no. 6, 15 March 2007 (2007-03-15), pages 1582 - 1589, ISSN: 0039-6028 * |
DATABASE INSPEC [online] THE INSTITUTION OF ELECTRICAL ENGINEERS, STEVENAGE, GB; 1 October 2005 (2005-10-01), SUTOH Y ET AL: "Mechanical bending property of YBCO coated conductor by IBAD/PLD", Database accession no. 8784555 * |
DATABASE INSPEC [online] THE INSTITUTION OF ELECTRICAL ENGINEERS, STEVENAGE, GB; 1996, FUJII T ET AL: "Epitaxy of deposited [alpha]-Fe films on high-index Cu substrate planes", Database accession no. 5305691 * |
FILONENKO O ET AL: "Influence of ultrathin templates on the epitaxial growth of CrSi2 on Si(001)", MICROELECTRONIC ENGINEERING ELSEVIER NETHERLANDS, vol. 76, no. 1-4, October 2004 (2004-10-01), pages 324 - 330, ISSN: 0167-9317 * |
GLESKOVA H ET AL: "Field-effect mobility of amorphous silicon thin-film transistors under strain", JOURNAL OF NON-CRYSTALLINE SOLIDS ELSEVIER NETHERLANDS, vol. 338-340, 15 June 2004 (2004-06-15), pages 732 - 735, ISSN: 0022-3093 * |
GOYAL A ET AL: "Low cost, single crystal-like substrates for practical, high efficiency solar cells", AIP CONFERENCE PROCEEDINGS AIP USA, no. 404, 1997, pages 377 - 394, XP002689485, ISSN: 0094-243X * |
HELLWIG O ET AL: "Growth of fcc(111) on bcc(110): new type of epitaxial transition observed for Pd on Cr", SURFACE SCIENCE ELSEVIER NETHERLANDS, vol. 398, no. 3, 20 February 1998 (1998-02-20), pages 379 - 385, ISSN: 0039-6028 * |
HOSHINO A ET AL: "Epitaxial growth of copper and cobalt phthalocyanines on KCl", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 1 (REGULAR PAPERS, SHORT NOTES & REVIEW PAPERS) JAPAN SOC. APPL. PHYS. JAPAN, vol. 43, no. 7A, July 2004 (2004-07-01), pages 4344 - 4350, ISSN: 0021-4922 * |
MACMANUS-DRISCOLL J ET AL: "Understanding and electrochemical control of YBa2Cu3O7-x thin film epitaxy on yttrium stabilized zirconia", JOURNAL OF APPLIED PHYSICS USA, vol. 75, no. 1, 1 January 1994 (1994-01-01), pages 412 - 422, ISSN: 0021-8979 * |
MITCHELL ET AL: "Characterisation of epitaxial TiO2 thin films grown on MgO(001) using atomic layer deposition", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 285, no. 1-2, 15 November 2005 (2005-11-15), pages 208 - 214, XP005123709, ISSN: 0022-0248, DOI: 10.1016/J.JCRYSGRO.2005.08.003 * |
NISHIKATA S ET AL: "Polycrystalline domain structure of pentacene thin films epitaxially grown on a hydrogen-terminated Si(111) surface", PHYSICAL REVIEW B (CONDENSED MATTER AND MATERIALS PHYSICS) AMERICAN PHYSICAL SOCIETY USA, vol. 76, no. 16, 15 October 2007 (2007-10-15), pages 165424 - 1, ISSN: 1098-0121 * |
OTTOSSON M ET AL: "Chemical vapour deposition of Cu2O on MgO(100) from CuI and N2O: aspects of epitaxy", JOURNAL OF CRYSTAL GROWTH NETHERLANDS, vol. 151, no. 3-4, June 1995 (1995-06-01), pages 305 - 311, ISSN: 0022-0248 * |
PHYSICA C ELSEVIER NETHERLANDS, vol. 426-431, no. 1, pages 933 - 937, ISSN: 0921-4534, DOI: 10.1016/J.PHYSC.2005.02.086 * |
PLANK H ET AL: "Molecular alignments in sexiphenyl thin films epitaxially grown on muscovite", THIN SOLID FILMS ELSEVIER SWITZERLAND, vol. 443, no. 1-2, 22 October 2003 (2003-10-22), pages 108 - 114, ISSN: 0040-6090 * |
QIANG FU ET AL: "Nucleation and growth of Cr clusters and films on (100) SrTiO3 surfaces", THIN SOLID FILMS, vol. 420-421, 2 December 2002 (2002-12-02), ELSEVIER SWITZERLAND, pages 455 - 460, ISSN: 0040-6090 * |
See also references of WO2009096932A1 * |
SHANKAR P S ET AL: "Bend strain tolerance of YBa2Cu3O7-x-coated conductors fabricated by inclined substrate deposition", SUPERCONDUCTOR SCIENCE & TECHNOLOGY IOP PUBLISHING UK, vol. 19, no. 9, September 2006 (2006-09-01), pages 930 - 933, ISSN: 0953-2048 * |
TIAN W ET AL: "Epitaxial integration of (0001) BiFeO3 with (0001) GaN", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 90, no. 17, 25 April 2007 (2007-04-25), pages 172908 - 172908, XP012094383, ISSN: 0003-6951, DOI: 10.1063/1.2730580 * |
VISOLY-FISHER I ET AL: "How polycrystalline devices can outperform single-crystal ones: Thin film CdTe/CdS solar cells", ADVANCED MATERIALS 20040604 WILEY-VCH VERLAG DE, vol. 16, no. 11, 4 June 2004 (2004-06-04), pages 879 - 883, DOI: 10.1002/ADMA.200306624 * |
VISOLY-FISHER I ET AL: "UNDERSTANDING THE BENEFICIAL ROLE OF GRAIN BOUNDARIES IN POLYCRYSTALLINE SOLAR CELLS FROM SINGLE-GRAIN-BOUNDARY SCANNING PROBE MICROSCOPY", ADVANCED FUNCTIONAL MATERIALS, vol. 16, no. 5, 20 March 2006 (2006-03-20), WILEY - V C H VERLAG GMBH & CO. KGAA, DE, pages 649 - 660, XP001241750, ISSN: 1616-301X, DOI: 10.1002/ADFM.200500396 * |
Also Published As
Publication number | Publication date |
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CN101981685B (zh) | 2015-05-20 |
WO2009096932A1 (en) | 2009-08-06 |
CA2745269A1 (en) | 2009-08-06 |
AU2008349510B2 (en) | 2012-05-10 |
EP2250664A1 (en) | 2010-11-17 |
AU2008349510A1 (en) | 2009-08-06 |
CN101981685A (zh) | 2011-02-23 |
HK1150095A1 (zh) | 2011-10-28 |
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