EP2248150A4 - Protection de bord par recuit milliseconde (dsa) - Google Patents
Protection de bord par recuit milliseconde (dsa)Info
- Publication number
- EP2248150A4 EP2248150A4 EP09710273A EP09710273A EP2248150A4 EP 2248150 A4 EP2248150 A4 EP 2248150A4 EP 09710273 A EP09710273 A EP 09710273A EP 09710273 A EP09710273 A EP 09710273A EP 2248150 A4 EP2248150 A4 EP 2248150A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- dsa
- edge protection
- millisecond annealing
- millisecond
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000137 annealing Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/032,475 US7754518B2 (en) | 2008-02-15 | 2008-02-15 | Millisecond annealing (DSA) edge protection |
PCT/US2009/033102 WO2009102600A1 (fr) | 2008-02-15 | 2009-02-04 | Protection de bord par recuit milliseconde (dsa) |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2248150A1 EP2248150A1 (fr) | 2010-11-10 |
EP2248150A4 true EP2248150A4 (fr) | 2012-03-07 |
Family
ID=40955524
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP09710273A Withdrawn EP2248150A4 (fr) | 2008-02-15 | 2009-02-04 | Protection de bord par recuit milliseconde (dsa) |
Country Status (7)
Country | Link |
---|---|
US (2) | US7754518B2 (fr) |
EP (1) | EP2248150A4 (fr) |
JP (1) | JP5451643B2 (fr) |
KR (3) | KR101608865B1 (fr) |
CN (2) | CN105514001B (fr) |
TW (2) | TWI545676B (fr) |
WO (1) | WO2009102600A1 (fr) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102118069B1 (ko) | 2009-12-31 | 2020-06-02 | 어플라이드 머티어리얼스, 인코포레이티드 | 웨이퍼 엣지 및 경사면 증착을 수정하기 위한 쉐도우 링 |
NL2009689A (en) * | 2011-12-01 | 2013-06-05 | Asml Netherlands Bv | Support, lithographic apparatus and device manufacturing method. |
US9005877B2 (en) | 2012-05-15 | 2015-04-14 | Tokyo Electron Limited | Method of forming patterns using block copolymers and articles thereof |
KR102003334B1 (ko) | 2012-09-04 | 2019-07-24 | 삼성전자주식회사 | 패턴 형성 방법 |
US9147574B2 (en) | 2013-03-14 | 2015-09-29 | Tokyo Electron Limited | Topography minimization of neutral layer overcoats in directed self-assembly applications |
US8975009B2 (en) | 2013-03-14 | 2015-03-10 | Tokyo Electron Limited | Track processing to remove organic films in directed self-assembly chemo-epitaxy applications |
US8980538B2 (en) | 2013-03-14 | 2015-03-17 | Tokyo Electron Limited | Chemi-epitaxy in directed self-assembly applications using photo-decomposable agents |
US20140273534A1 (en) | 2013-03-14 | 2014-09-18 | Tokyo Electron Limited | Integration of absorption based heating bake methods into a photolithography track system |
US9136110B2 (en) | 2013-03-15 | 2015-09-15 | Tokyo Electron Limited | Multi-step bake apparatus and method for directed self-assembly lithography control |
KR102394994B1 (ko) | 2013-09-04 | 2022-05-04 | 도쿄엘렉트론가부시키가이샤 | 유도 자기 조립용 화학 템플릿을 생성하기 위한 경화 포토레지스트의 자외선을 이용한 박리 |
US9349604B2 (en) | 2013-10-20 | 2016-05-24 | Tokyo Electron Limited | Use of topography to direct assembly of block copolymers in grapho-epitaxial applications |
US9793137B2 (en) | 2013-10-20 | 2017-10-17 | Tokyo Electron Limited | Use of grapho-epitaxial directed self-assembly applications to precisely cut logic lines |
CN104733344A (zh) * | 2013-12-18 | 2015-06-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种边沿保护装置及等离子体加工设备 |
CN104736011B (zh) * | 2013-12-27 | 2017-05-31 | Ykk株式会社 | 增强膜粘着装置及具有可分离式嵌插件的拉链 |
US20150187616A1 (en) * | 2013-12-31 | 2015-07-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mechanisms of adjustable laser beam for laser spike annealing |
US9410249B2 (en) | 2014-05-15 | 2016-08-09 | Infineon Technologies Ag | Wafer releasing |
US10892180B2 (en) * | 2014-06-02 | 2021-01-12 | Applied Materials, Inc. | Lift pin assembly |
US10658222B2 (en) * | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
CN105988298B (zh) * | 2015-02-02 | 2018-06-01 | 上海微电子装备(集团)股份有限公司 | 硅片边缘保护装置及保护方法 |
KR102090152B1 (ko) * | 2015-12-30 | 2020-03-17 | 맷슨 테크놀로지, 인크. | 밀리세컨드 어닐 시스템을 위한 챔버 벽 가열 |
US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
US9947597B2 (en) | 2016-03-31 | 2018-04-17 | Tokyo Electron Limited | Defectivity metrology during DSA patterning |
JP6618876B2 (ja) * | 2016-09-26 | 2019-12-11 | 株式会社ニューフレアテクノロジー | 基板処理装置、搬送方法およびサセプタ |
CN106571321B (zh) * | 2016-11-18 | 2019-12-06 | 中国电子科技集团公司第四十八研究所 | 一种用于快速热处理设备的载片台 |
US10704147B2 (en) * | 2016-12-03 | 2020-07-07 | Applied Materials, Inc. | Process kit design for in-chamber heater and wafer rotating mechanism |
US10535538B2 (en) * | 2017-01-26 | 2020-01-14 | Gary Hillman | System and method for heat treatment of substrates |
CN110376847B (zh) * | 2018-04-12 | 2021-01-01 | 上海微电子装备(集团)股份有限公司 | 一种基底边缘保护环单元、光刻设备及保护方法 |
US20200365381A1 (en) * | 2019-05-14 | 2020-11-19 | Mattson Technology, Inc. | Systems And Methods For Transportation Of Replaceable Parts In a Vacuum Processing Apparatus |
CN111508890B (zh) * | 2020-04-28 | 2023-12-22 | 北京北方华创微电子装备有限公司 | 一种晶片装卸机构和半导体工艺设备 |
CN112670206A (zh) * | 2020-12-21 | 2021-04-16 | 上海华力集成电路制造有限公司 | 一种改善晶圆破片的激光退火设备及其使用方法 |
US20230002894A1 (en) * | 2021-07-01 | 2023-01-05 | Applied Materials, Inc. | Shadow ring lift to improve wafer edge performance |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050272228A1 (en) * | 2004-06-07 | 2005-12-08 | Takayuki Ito | Annealing apparatus, annealing method, and manufacturing method of a semiconductor device |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5079112A (en) * | 1989-08-07 | 1992-01-07 | At&T Bell Laboratories | Device manufacture involving lithographic processing |
US5146092A (en) * | 1990-05-23 | 1992-09-08 | Ntc Technology, Inc. | Gas analysis transducers with electromagnetic energy detector units |
US5304248A (en) * | 1990-12-05 | 1994-04-19 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
JP2601179Y2 (ja) * | 1993-11-29 | 1999-11-08 | 日新電機株式会社 | 基板保持装置 |
JP3251875B2 (ja) * | 1996-05-10 | 2002-01-28 | 株式会社東芝 | 荷電粒子ビーム露光装置 |
US6168668B1 (en) | 1998-11-25 | 2001-01-02 | Applied Materials, Inc. | Shadow ring and guide for supporting the shadow ring in a chamber |
US6589352B1 (en) * | 1999-12-10 | 2003-07-08 | Applied Materials, Inc. | Self aligning non contact shadow ring process kit |
US6627846B1 (en) | 1999-12-16 | 2003-09-30 | Oramir Semiconductor Equipment Ltd. | Laser-driven cleaning using reactive gases |
DE10226603A1 (de) | 2002-06-14 | 2004-01-08 | Infineon Technologies Ag | Verfahren zum Strukturieren einer Siliziumschicht sowie dessen Verwendung zur Herstellung einer integrierten Halbleiterschaltung |
US7166200B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate in a plasma processing system |
US6835914B2 (en) | 2002-11-05 | 2004-12-28 | Mattson Technology, Inc. | Apparatus and method for reducing stray light in substrate processing chambers |
CN1322563C (zh) * | 2004-01-18 | 2007-06-20 | 统宝光电股份有限公司 | 制备多晶硅膜层的激光退火装置及形成多晶硅膜层的方法 |
US20060286807A1 (en) | 2005-06-16 | 2006-12-21 | Jack Hwang | Use of active temperature control to provide emmisivity independent wafer temperature |
US7368303B2 (en) | 2004-10-20 | 2008-05-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for temperature control in a rapid thermal processing system |
US7277213B2 (en) * | 2004-12-03 | 2007-10-02 | Microvision, Inc. | Aperture plate and related system and method |
US20070012557A1 (en) * | 2005-07-13 | 2007-01-18 | Applied Materials, Inc | Low voltage sputtering for large area substrates |
US20070212859A1 (en) | 2006-03-08 | 2007-09-13 | Paul Carey | Method of thermal processing structures formed on a substrate |
-
2008
- 2008-02-15 US US12/032,475 patent/US7754518B2/en active Active
-
2009
- 2009-02-04 KR KR1020107020693A patent/KR101608865B1/ko not_active IP Right Cessation
- 2009-02-04 CN CN201610031475.6A patent/CN105514001B/zh active Active
- 2009-02-04 CN CN200980105096.5A patent/CN101946302B/zh active Active
- 2009-02-04 WO PCT/US2009/033102 patent/WO2009102600A1/fr active Application Filing
- 2009-02-04 KR KR1020177016202A patent/KR101850088B1/ko active IP Right Grant
- 2009-02-04 JP JP2010546828A patent/JP5451643B2/ja not_active Expired - Fee Related
- 2009-02-04 KR KR1020167005075A patent/KR101749041B1/ko active IP Right Grant
- 2009-02-04 EP EP09710273A patent/EP2248150A4/fr not_active Withdrawn
- 2009-02-13 TW TW103137232A patent/TWI545676B/zh active
- 2009-02-13 TW TW098104686A patent/TWI463589B/zh not_active IP Right Cessation
-
2010
- 2010-07-12 US US12/834,620 patent/US7923280B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050272228A1 (en) * | 2004-06-07 | 2005-12-08 | Takayuki Ito | Annealing apparatus, annealing method, and manufacturing method of a semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
KR20100123724A (ko) | 2010-11-24 |
WO2009102600A1 (fr) | 2009-08-20 |
KR20170072362A (ko) | 2017-06-26 |
TW201507050A (zh) | 2015-02-16 |
JP5451643B2 (ja) | 2014-03-26 |
US20090209112A1 (en) | 2009-08-20 |
CN101946302A (zh) | 2011-01-12 |
TWI463589B (zh) | 2014-12-01 |
US7754518B2 (en) | 2010-07-13 |
JP2011512674A (ja) | 2011-04-21 |
TW201001588A (en) | 2010-01-01 |
KR101850088B1 (ko) | 2018-04-18 |
TWI545676B (zh) | 2016-08-11 |
CN105514001B (zh) | 2018-03-09 |
CN101946302B (zh) | 2016-02-10 |
KR101608865B1 (ko) | 2016-04-04 |
KR101749041B1 (ko) | 2017-06-20 |
EP2248150A1 (fr) | 2010-11-10 |
KR20160030321A (ko) | 2016-03-16 |
US7923280B2 (en) | 2011-04-12 |
US20100273334A1 (en) | 2010-10-28 |
CN105514001A (zh) | 2016-04-20 |
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Legal Events
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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17P | Request for examination filed |
Effective date: 20100909 |
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Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR |
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AX | Request for extension of the european patent |
Extension state: AL BA RS |
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DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20120208 |
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RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 21/324 20060101ALI20120203BHEP Ipc: H01L 21/02 20060101ALI20120203BHEP Ipc: H01L 21/00 20060101AFI20120203BHEP |
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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18D | Application deemed to be withdrawn |
Effective date: 20120901 |