EP2200051B1 - Radiofrequenz-Vorrichtung enthaltend eine dünne Schicht mit hoher Permittivität und Permeabilität - Google Patents

Radiofrequenz-Vorrichtung enthaltend eine dünne Schicht mit hoher Permittivität und Permeabilität Download PDF

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Publication number
EP2200051B1
EP2200051B1 EP09305990.5A EP09305990A EP2200051B1 EP 2200051 B1 EP2200051 B1 EP 2200051B1 EP 09305990 A EP09305990 A EP 09305990A EP 2200051 B1 EP2200051 B1 EP 2200051B1
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EP
European Patent Office
Prior art keywords
radio
layers
frequency device
ferromagnetic
layer
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Not-in-force
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EP09305990.5A
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English (en)
French (fr)
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EP2200051A1 (de
Inventor
Bernard Viala
Evangeline Benevent
M. Christophe Dubarry
M. Kévin Garello
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Centre National de la Recherche Scientifique CNRS
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Centre National de la Recherche Scientifique CNRS
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3218—Exchange coupling of magnetic films via an antiferromagnetic interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Magnetic Films (AREA)
  • Nanotechnology (AREA)

Claims (14)

  1. Zwischen 1 und 20 GHz arbeitende Radiofrequenz-Vorrichtung, bei der mindestens ein di-elektromagnetisches Element, arbeitend mit einer Radiofrequenz zwischen 1 und 20 GHz, eine dünne Verbundschicht (10, 30, 40) enthält, die ein magnetisches Material (16, 18, 38) mit einer Permeabilität über 10 bis 1 GHz und ein dielektrisches Material (12, 22) umfasst, dadurch gekennzeichnet, dass es sich bei dem dielektrischen Material (12, 22) um ein Perowskit handelt, das durch Ionenstrahl-Zerstäubung in einem Vakuumbehälter, mit einer Permittivität von über 100 bis 1 GHz erhalten wird und dadurch, dass die Vorrichtung Gegenstand einer Ablagerungs- oder Temperoperation bei einer Temperatur von höchstens gleich 400 °C ist.
  2. Radiofrequenz-Vorrichtung gemäß Anspruch 1, dadurch gekennzeichnet, dass die Permeabilität des magnetischen Materials (16, 18, 38) höher als 100 bis 1 GHz liegt.
  3. Radiofrequenz-Vorrichtung gemäß Anspruch 1 oder 2, dadurch gekennzeichnet, dass die Permittivität des dielektrischen Materials (12, 22) höher als 100 bis 1 GHz liegt.
  4. Radiofrequenz-Vorrichtung gemäß einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass das magnetische Material (16, 18, 38) und das dielektrische Material (12, 22) in Form dünner Schichten angeordnet sind.
  5. Radiofrequenz-Vorrichtung gemäß Anspruch 4, dadurch gekennzeichnet, dass die aus magnetischem Material hergestellten Schichten Kontakt mit den Schichten aus dielektrischem Material haben.
  6. Radiofrequenz-Vorrichtung gemäß einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass es sich bei dem magnetischen Material um ein ferromagnetisches Material handelt, dessen Magnetisierung über 1 T liegt, und besser noch über 2 T.
  7. Radiofrequenz-Vorrichtung gemäß einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass die Schichten aus magnetischem Material aus ferromagnetischen Schichten bestehen, die durch Austauschkopplung mit anti-ferromagnetischen Schichten (20, 34, 36) verkoppelt sind.
  8. Radiofrequenz-Vorrichtung gemäß Anspruch 7, dadurch gekennzeichnet, dass das Stapel der Schichten aus ferromagnetischem und anti-ferromagnetischem Material von den Schichten aus dielektrischem Material durch mindestens eine Zwischenschicht (42, 44) getrennt sind, die als Wachstumsschicht oder Schutzschicht dient.
  9. Radiofrequenz-Vorrichtung gemäß einem der Ansprüche 6 bis 8, dadurch gekennzeichnet, dass das ferromagnetische Material aus der Gruppe ausgewählt wird, die die Legierungen von Fe und von Co und von Ni, und alle Zusammensetzungen, die zwei oder drei dieser eventuell Bor- oder Stickstoffdotierten (NiFe, CoNiFe, CoFe, CoFeB, FeN, CoFeN + eventuell X mit X = Al, Si, Ta, Hf, Zr...) Elemente beinhalten, umfasst.
  10. Radiofrequenz-Vorrichtung gemäß einem der Ansprüche 7 bis 8, dadurch gekennzeichnet, dass das anti-ferromagnetische Material aus der Gruppe ausgewählt wird, die die Legierungen auf Manganbasis, und insbesondere auf Basis von IrMn, PtMn oder NiMn oder ein Fe- oder Co- Oxid, umfasst.
  11. Radiofrequenz-Vorrichtung gemäß einem der Ansprüche 1 bis 10, dadurch gekennzeichnet, dass das dielektrische Material ein Barium- oder Strontium-Titanat ist.
  12. Radiofrequenz-Vorrichtung gemäß einem der Ansprüche 8 bis 11, dadurch gekennzeichnet, dass die Zwischenschicht oder Zwischenschichten aus einem Material besteht/bestehen, das aus der Gruppe ausgewählt wird, die Platin, Ruthenium und Tantal umfasst.
  13. Radiofrequenz-Vorrichtung gemäß einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass das magnetische Material mindestens eine Schicht ferromagnetischen Materials (38) umfasst, die in Austauschkopplung zwischen zwei anti-ferromagnetischen Schichten (34, 36) und/ oder einer Schicht anti-ferromagnetischen Materials (20) eingefügt wird, die eingefügt in Austauschkopplung zwischen zwei ferromagnetischen Schichten (16, 18) eingefügt wird.
  14. Verfahren zur Herstellung einer Radiofrequenz-Vorrichtung gemäß einem der Ansprüche 1 bis 13, dadurch gekennzeichnet, dass die Schichten aus dielektrischem Material durch Ionenstrahl-Zerstäubung in einem Vakuumbehälter abgeschieden werden, und dass der Stapel, der die Schicht bildet, Gegenstand einer Ablagerungs- oder Temperoperation bei einer Temperatur von höchstens gleich 400 °C ist.
EP09305990.5A 2008-12-11 2009-10-19 Radiofrequenz-Vorrichtung enthaltend eine dünne Schicht mit hoher Permittivität und Permeabilität Not-in-force EP2200051B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0858470A FR2939990B1 (fr) 2008-12-11 2008-12-11 Film mince a permittivite et permeabilite elevees.

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EP2200051A1 EP2200051A1 (de) 2010-06-23
EP2200051B1 true EP2200051B1 (de) 2017-09-27

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US (1) US8916391B2 (de)
EP (1) EP2200051B1 (de)
JP (1) JP5536418B2 (de)
FR (1) FR2939990B1 (de)

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FR2966985B1 (fr) 2010-11-03 2012-12-07 Commissariat Energie Atomique Conducteur magnetique artificiel et antenne
JP2014502467A (ja) 2010-11-22 2014-01-30 コミシリア ア レネルジ アトミック エ オ エナジーズ オルタネティヴズ 拡張された帯域幅を有する平面アンテナ
WO2015152758A1 (en) * 2014-04-02 2015-10-08 Baker Hughes Incorporated Imaging of earth formation with high frequency sensor
CN104992809B (zh) * 2015-07-08 2018-01-30 兰州大学 平面内任意方向均能实现GHz高磁导率的磁性材料及制备方法
US11626228B2 (en) * 2016-12-22 2023-04-11 Rogers Corporation Multi-layer magneto-dielectric material
GB2572701A (en) * 2017-01-30 2019-10-09 Rogers Corp Method of making a multi-layer magneto-dielectric material
FR3066854B1 (fr) 2017-05-29 2019-07-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif magnetique integre a inductance variable et procede de realisation d'un tel dispositif
GB2592763B (en) * 2018-11-15 2023-01-04 Rogers Corp High frequency magnetic films, method of manufacture, and uses thereof
FR3088849B1 (fr) * 2018-11-28 2023-04-28 Commissariat Energie Atomique Feuille présentant des propriétés diélectriques ou magnéto-diélectriques.

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JP2956299B2 (ja) * 1991-08-30 1999-10-04 株式会社日立製作所 磁気検出素子およびエネルギー検出素子ならびにエネルギー検出方法
WO1996029725A1 (en) * 1995-03-21 1996-09-26 Northern Telecom Limited Ferroelectric dielectric for integrated circuit applications at microwave frequencies
JP3576361B2 (ja) * 1997-09-18 2004-10-13 富士通株式会社 磁気抵抗効果型ヘッド及び磁気記録再生装置
JP3317229B2 (ja) * 1998-02-02 2002-08-26 三菱マテリアル株式会社 磁性体誘電体複合磁器
JP2001345212A (ja) * 2000-05-31 2001-12-14 Tdk Corp 積層電子部品
JP2002198583A (ja) * 2000-12-26 2002-07-12 Hitachi Ltd 強磁性トンネル型磁気抵抗効果素子及び磁気ヘッド
JP4093532B2 (ja) * 2001-03-13 2008-06-04 独立行政法人理化学研究所 アモルファス状金属酸化物の薄膜材料の製造方法
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Also Published As

Publication number Publication date
FR2939990B1 (fr) 2016-02-19
US8916391B2 (en) 2014-12-23
EP2200051A1 (de) 2010-06-23
JP5536418B2 (ja) 2014-07-02
JP2010141301A (ja) 2010-06-24
US20100151797A1 (en) 2010-06-17
FR2939990A1 (fr) 2010-06-18

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