EP2193558A1 - Light-emitting component having a wavelength converter and production method - Google Patents

Light-emitting component having a wavelength converter and production method

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Publication number
EP2193558A1
EP2193558A1 EP08801332A EP08801332A EP2193558A1 EP 2193558 A1 EP2193558 A1 EP 2193558A1 EP 08801332 A EP08801332 A EP 08801332A EP 08801332 A EP08801332 A EP 08801332A EP 2193558 A1 EP2193558 A1 EP 2193558A1
Authority
EP
European Patent Office
Prior art keywords
light
matrix material
converter
vapor
conversion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
EP08801332A
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German (de)
French (fr)
Inventor
Norwin Von Malm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osram Oled GmbH
Original Assignee
Osram Opto Semiconductors GmbH
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Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of EP2193558A1 publication Critical patent/EP2193558A1/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/20—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass

Definitions

  • the present invention relates to a light-emitting component with a wavelength converter, in particular for a surface illumination source, and an associated production method.
  • Wavelength converters are used in particular for areal sources, such as organic light-emitting diodes (OLEDs).
  • OLEDs organic light-emitting diodes
  • Appl. Phys. Lett. 80, 3470 - 3472 (2002) describes an electroluminescent device in which a mixture of organic and inorganic
  • Fluorescence converters and a polymeric matrix material is applied to the back of a substrate.
  • the material particles or molecules which are intended as converter material are dispersed or dissolved in a matrix of a liquid polymeric organic material and then applied as a thin layer on the back of the substrate. It is necessary in this type of manufacture that the matrix material be suitable for the formation of a layer or a thin film; therefore, a polymeric organic material is used here.
  • the object of the present invention is to specify how surface illumination sources can be provided with wavelength converters in a simplified manner, without the need to use complex conventional production processes, such as the use of doctor blades, screen printing or gluing.
  • it is provided to use a matrix material and a converter material in a conversion layer provided for wavelength conversion, both of which are vaporisable under high vacuum and may in particular comprise low molecular weight organic compounds.
  • Vaporable in a high vacuum may mean, for example, that the matrix material and the converter material can be applied by evaporation in a high vacuum to a surface intended for radiation emission without being damaged.
  • low molecular weight organic materials are to be understood as meaning the group of organic molecules which are not constructed in a repetitive manner, ie these molecules do not consist of n-repeating units, unlike polymers, for example
  • materials are also to be understood by the term “low molecular weight organic materials”, which belong to the group of oligomers, that is to say, repetitively constructed molecules with n.ltoreq.10
  • materials are also included under the term “low molecular weight organic materials ", which belong to the group of dendrimers, ie molecules with outward increasing branching.
  • organic matrix material are in particular aromatic amines, carbazoles or aromatic
  • inorganic vaporizable systems can also be used, for example at least one of the following materials: MoO 3 , ZnS, MgF 2 , Ta 2 O 5 , TiO, Al 2 O 3 . That is, the matrix material may consist of one of these materials or contain at least one of these materials.
  • Suitable converter materials which are vaporizable under high vacuum may be selected from a group comprising perylenes, benzopyrene, coumarins, rhodamines and azo, terrylene, quaterrylene, naphthalimide, cyanine, xanthene, oxazine, anthracene, naphthacene -, anthraquinone and thiazine dyes. That is, the converter material may consist of at least one of these substances or may contain at least one of these substances.
  • Such a conversion layer is used in particular for areally radiating, conversion-based electroluminescent components, such as, for example, organic light-emitting diodes, which in turn may in turn be formed from low-molecular-weight organic compounds.
  • conversion-based electroluminescent components such as, for example, organic light-emitting diodes, which in turn may in turn be formed from low-molecular-weight organic compounds.
  • the low molecular weight organic compounds are sublimable in a high vacuum and can therefore be applied in the same vapor deposition from a high vacuum, with which the radiation-generating layers of the device are applied.
  • the manufacturing process can be significantly simplified.
  • the invention can be used for light-emitting components, in particular for planar electroluminescent components, which are made of inorganic or organic Materials are constructed.
  • Organic light-intersecting devices such as organic light-emitting diodes, may include low molecular weight organic layers for light generation and charge transport, but may also be constructed of polymeric organic materials. The number of layers provided for radiation generation and current injection is not limited in this case.
  • the electrodes metals or semiconducting materials, inorganic as well as organic, may be used.
  • at least one of the electrodes is formed in the form of a transparent layer for the generated radiation and provided indirectly or directly with the conversion layer.
  • the converter material acts as a fluorescence converter in the conversion layer and can be present in different concentrations in the matrix material for this purpose; its absorption band should at least partially overlap with the wavelength range of the emitted radiation. It is also possible to use a plurality of converter materials in the conversion layer. The converter materials can be provided for the same or different emission wavelengths. The production takes place for example by simultaneous evaporation (co-evaporation) from several sources of material.
  • the matrix material can be transparent for all relevant wavelengths; but it can also be made of a material that absorbs the emitted radiation, whereupon the recorded radiation energy is delivered via Förster- or Dexter transfer to the converter material. Also on the a plurality of conversion layers are described above one another or, using shadow masks during vapor deposition, applied side by side. The color location of the conversion component can be influenced by the layer thickness of the deposited conversion layer, the concentration of the emitter molecules in the matrix and the area ratios between conversion layers applied side by side.
  • a method for producing a light-emitting component with wavelength converter is also specified, in which a conversion layer is vapor-deposited onto a surface provided for radiation emission.
  • a device described here can be produced. All features disclosed in connection with the component are therefore also disclosed for the method.
  • FIG. 1 shows an embodiment of a top emitter LED with electrically conductive substrate in cross section.
  • FIG. 2 shows an embodiment of a bottom emitter LED with electrically conductive substrate in cross section. - S -
  • FIG. 3 shows an embodiment of a top emitter OLED without a backside electrode in cross section.
  • FIG. 4 shows an exemplary embodiment of a bottom emitter OLED without a backside electrode in cross section.
  • FIG. 1 shows a first exemplary embodiment in a schematic cross section.
  • a first electrode layer 1 provided as a backside electrode is applied to a rear side of an electrically conductive substrate 2.
  • a layer structure 3 which may comprise known per se layers of a light emitting device, the details of which are not essential to the invention and therefore not shown.
  • the layer structure 3 comprises in particular the active layers intended for generating radiation. In addition, boundary layers or sheath layers provided for current injection may be provided.
  • a second electrode layer 4 which is applied over the entire surface in this embodiment and consists of a material which is transparent to the radiation to be emitted.
  • the conversion layer 5 is applied, which comprises a matrix material and a converter material, which are preferably both low molecular weight organic compounds. The radiation emission takes place over the entire area in the direction shown by the arrow.
  • FIG. 2 shows a schematic cross section corresponding to FIG. 1 of a further exemplary embodiment, in which the conversion layer 5 is on the underside or rear side of the component, that is to say on the rear side Surface of the first electrode layer 1, is applied.
  • the substrate 2 and the first electrode layer 1 are formed of a material transparent to the radiation to be emitted, and the light emission is in the direction indicated by the arrow.
  • the electrode layer which is provided on the side intended for the radiation, but may for example also be opaque and ring-shaped or frame-shaped surrounding the emission surface.
  • the conversion layer may be applied to the light exit surface within the electrode layer on a surface of a layer structure or directly on the substrate material.
  • a particular advantage of the invention results in embodiments in which the light-emitting component is a low molecular weight organic light-emitting diode, so that both the electroluminescent layers of the light-emitting diode and the components of the conversion layer can be vapor-deposited in the same system.
  • the conversion layer 5 can be produced immediately after the application of the transparent cover electrode, the second electrode layer 4. So there are no additional processes for coating with the converter material (for example, doctoring, screen printing, gluing) more necessary.
  • the first electrode layer 1 is arranged in this embodiment on the front side of the substrate 2 between the substrate 2 and the layer structure 3.
  • the conversion layer 5 can even be deposited simultaneously with the production of the organic layer structure 3 on the back side of the substrate 2. Also in this embodiment, therefore, no additional processes for coating with the converter material (for example, doctor blades, screen printing, gluing) are more necessary.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A conversion layer (5) is vapor-deposited on the light-emitting surface. The conversion layer (5) may comprise a vapor-depositable matrix material and a vapor-depositable converter material, both of which may particularly comprise compounds having a low molecular weight. A layer structure (3) comprising layers provided for generating radiation may also be comprised of organic compounds having a low molecular weight, such that all compounds may be applied in the same vapor depositing system.

Description

Beschreibung description
Lichtemittierendes Bauelement mit Wellenlängenkonverter und HerstellungsverfahrenLight-emitting component with wavelength converter and manufacturing method
Die vorliegende Erfindung betrifft ein lichtemittierendes Bauelement mit einem Wellenlängenkonverter, insbesondere für eine Flächenleuchtquelle, und ein zugehöriges Herstellungsverfahren.The present invention relates to a light-emitting component with a wavelength converter, in particular for a surface illumination source, and an associated production method.
Wellenlängenkonverter werden insbesondere bei Flächenleucht- quellen, wie zum Beispiel bei organischen Leuchtdioden (OLED), eingesetzt. In Appl . Phys . Lett . 80, 3470 - 3472 (2002) ist ein elektrolumineszentes Bauelement beschrieben, bei dem ein Gemisch aus organischen und anorganischenWavelength converters are used in particular for areal sources, such as organic light-emitting diodes (OLEDs). In Appl. Phys. Lett. 80, 3470 - 3472 (2002) describes an electroluminescent device in which a mixture of organic and inorganic
Fluoreszenzkonvertern und einem polymeren Matrixmaterial auf die Rückseite eines Substrates aufgebracht wird. Die Materialpartikel oder Moleküle, die als Konvertermaterial vorgesehen sind, werden in einer Matrix aus einem flüssigen polymeren organischen Material dispergiert oder gelöst und dann als dünne Schicht auf die Rückseite des Substrates aufgebracht. Es ist bei dieser Art der Herstellung erforderlich, dass das Matrixmaterial für die Ausbildung einer Schicht oder eines dünnen Films geeignet ist; daher wird hier ein polymeres organisches Material verwendet.Fluorescence converters and a polymeric matrix material is applied to the back of a substrate. The material particles or molecules which are intended as converter material are dispersed or dissolved in a matrix of a liquid polymeric organic material and then applied as a thin layer on the back of the substrate. It is necessary in this type of manufacture that the matrix material be suitable for the formation of a layer or a thin film; therefore, a polymeric organic material is used here.
Aufgabe der vorliegenden Erfindung ist es, anzugeben, wie Flächenleuchtquellen auf vereinfachte Weise mit Wellenlängenkonvertern versehen werden können, ohne dass aufwendige herkömmliche Herstellungsprozesse, wie die Verwendung von Rakeln, Siebdruck oder Kleben, eingesetzt werden müssen. Gemäß zumindest einer Ausführungsform vorliegender Erfindung ist vorgesehen, in einer für Wellenlängenkonversion vorgesehenen Konversionsschicht ein Matrixmaterial und ein Konvertermaterial zu verwenden, die beide im Hochvakuum verdampfbar sind und insbesondere niedermolekulare organische Verbindungen umfassen können.The object of the present invention is to specify how surface illumination sources can be provided with wavelength converters in a simplified manner, without the need to use complex conventional production processes, such as the use of doctor blades, screen printing or gluing. In accordance with at least one embodiment of the present invention, it is provided to use a matrix material and a converter material in a conversion layer provided for wavelength conversion, both of which are vaporisable under high vacuum and may in particular comprise low molecular weight organic compounds.
„Im Hochvakuum verdampfbar" kann dabei beispielsweise heißen, dass Matrixmaterial und das Konvertermaterial durch Verdampfen im Hochvakuum auf eine für Strahlungsemission vorgesehene Oberfläche aufgebracht werden können, ohne dabei beschädigt zu werden."Vaporizable in a high vacuum" may mean, for example, that the matrix material and the converter material can be applied by evaporation in a high vacuum to a surface intended for radiation emission without being damaged.
Unter „niedermolekularen organischen Materialien" sind im Sinne der vorliegenden Erfindung die Gruppe der organischen Moleküle zu verstehen, die nicht repetitiv aufgebaut sind. Diese Moleküle setzen sich also nicht aus sich n-fach wiederholenden Einheiten zusammen - anders als dies beispielsweise bei Polymeren der Fall ist. Darüber hinaus sind im Sinne vorliegender Erfindung auch Materialien unter den Begriff „niedermolekulare organische Materialien" zu fassen, welche zur Gruppe der Oligomere gehören, also repetitiv aufgebaute Moleküle mit n ≤ 10. Ferner sind im Sinne vorliegender Erfindung auch Materialien unter den Begriff „niedermolekulare organische Materialien" zu fassen, welche zur Gruppe der Dendrimere gehören, also Moleküle mit nach außen zunehmenden Verästelungen.For the purposes of the present invention, "low molecular weight organic materials" are to be understood as meaning the group of organic molecules which are not constructed in a repetitive manner, ie these molecules do not consist of n-repeating units, unlike polymers, for example In addition, for the purposes of the present invention, materials are also to be understood by the term "low molecular weight organic materials", which belong to the group of oligomers, that is to say, repetitively constructed molecules with n.ltoreq.10 In the context of the present invention, materials are also included under the term "low molecular weight organic materials ", which belong to the group of dendrimers, ie molecules with outward increasing branching.
Als niedermolekulares organisches Matrixmaterial sind insbesondere aromatische Amine, Carbazole oder aromatischeAs low molecular weight organic matrix material are in particular aromatic amines, carbazoles or aromatic
Silanderivate geeignet. Statt organischer Matrixmaterialien können auch anorganische verdampfbare Systeme verwendet werden, zum Beispiel zumindest eines der folgenden Materialien: MoO3, ZnS, MgF2, Ta2O5, TiO, Al2O3. Das heißt, das Matrixmaterial kann aus einem dieser Materialien bestehen oder zumindest eines dieser Materialien enthalten.Silane derivatives suitable. Instead of organic matrix materials, inorganic vaporizable systems can also be used, for example at least one of the following materials: MoO 3 , ZnS, MgF 2 , Ta 2 O 5 , TiO, Al 2 O 3 . That is, the matrix material may consist of one of these materials or contain at least one of these materials.
Geeignete Konvertermaterialien, die im Hochvakuum verdampfbar sind, können aus einer Gruppe ausgewählt sein, die Perylene, Benzopyrene, Coumarine, Rhodamine sowie Azo- , Terrylen- , Quaterrylen- , Naphthalimid- , Cyanin- , Xanthen- , Oxazin-, Anthracen- , Naphthacen- , Anthrachinon- und Thiazin-Farbstoffe umfasst. Das heißt, das Konvertermaterial kann aus zumindest einem dieser Stoffe bestehen oder kann zumindest einen dieser Stoffe enthalten.Suitable converter materials which are vaporizable under high vacuum may be selected from a group comprising perylenes, benzopyrene, coumarins, rhodamines and azo, terrylene, quaterrylene, naphthalimide, cyanine, xanthene, oxazine, anthracene, naphthacene -, anthraquinone and thiazine dyes. That is, the converter material may consist of at least one of these substances or may contain at least one of these substances.
Eine solche Konversionsschicht wird insbesondere für flächig abstrahlende, konversionsbasierte elektrolumineszente Bauelemente, wie zum Beispiel organische Leuchtdioden, die insbesondere ihrerseits aus niedermolekularen organischen Verbindungen ausgebildet sein können, eingesetzt. Die niedermolekularen organischen Verbindungen sind im Hochvakuum sublimierbar und können daher in derselben Aufdampfanläge aus einem Hochvakuum aufgebracht werden, mit der auch die strahlungserzeugenden Schichten des Bauelementes aufgebracht werden. Durch die Verwendung niedermolekularer organischer Verbindungen für sämtliche Schichten, die zudem in derselben Aufdampfanläge aufgebracht werden, kann der Herstellungsprozess wesentlich vereinfacht werden.Such a conversion layer is used in particular for areally radiating, conversion-based electroluminescent components, such as, for example, organic light-emitting diodes, which in turn may in turn be formed from low-molecular-weight organic compounds. The low molecular weight organic compounds are sublimable in a high vacuum and can therefore be applied in the same vapor deposition from a high vacuum, with which the radiation-generating layers of the device are applied. By using low molecular weight organic compounds for all layers, which are also applied in the same vapor deposition, the manufacturing process can be significantly simplified.
Die Erfindung kann für lichtemittierende Bauelemente, insbesondere für flächige elektrolumineszente Bauelemente, eingesetzt werden, die aus anorganischen oder organischen Materialien aufgebaut sind. Organische lichtetnittierende Bauelemente, wie zum Beispiel organische Leuchtdioden, können niedermolekulare organische Schichten zur Lichterzeugung und zum Ladungstransport umfassen, aber auch aus polymeren organischen Materialien aufgebaut sein. Die Anzahl der für die Strahlungserzeugung und die Strominjektion vorgesehenen Schichten unterliegt hierbei keinen Einschränkungen. Für die Elektroden können Metalle oder halbleitende Materialien, anorganische ebenso wie organische, verwendet werden. Vorzugsweise wird zumindest eine der Elektroden in der Form einer für die erzeugte Strahlung transparenten Schicht ausgebildet und mittelbar oder unmittelbar mit der Konversionsschicht versehen.The invention can be used for light-emitting components, in particular for planar electroluminescent components, which are made of inorganic or organic Materials are constructed. Organic light-intersecting devices, such as organic light-emitting diodes, may include low molecular weight organic layers for light generation and charge transport, but may also be constructed of polymeric organic materials. The number of layers provided for radiation generation and current injection is not limited in this case. For the electrodes, metals or semiconducting materials, inorganic as well as organic, may be used. Preferably, at least one of the electrodes is formed in the form of a transparent layer for the generated radiation and provided indirectly or directly with the conversion layer.
Für die Emissionswellenlänge wie für die Bandbreite desFor the emission wavelength as well as for the bandwidth of the
Spektrums ergeben sich durch den Einsatz der Erfindung keine Einschränkungen. Das Konvertermaterial fungiert in der Konversionsschicht als Fluoreszenzkonverter und kann hierzu in unterschiedlicher Konzentration in dem Matrixmaterial vorlie- gen; seine Absorptionsbande sollte zumindest teilweise mit dem Wellenlängenbereich der emittierten Strahlung überlappen. Es können auch mehrere Konvertermaterialien in der Konversionsschicht eingesetzt werden. Die Konvertermaterialien können für gleiche oder verschiedene Emissionswellenlängen vorgesehen werden. Die Herstellung geschieht zum Beispiel durch gleichzeitiges Verdampfen (Ko-Verdampfen) aus mehreren Materialquellen .Spectrum arise by the use of the invention no restrictions. The converter material acts as a fluorescence converter in the conversion layer and can be present in different concentrations in the matrix material for this purpose; its absorption band should at least partially overlap with the wavelength range of the emitted radiation. It is also possible to use a plurality of converter materials in the conversion layer. The converter materials can be provided for the same or different emission wavelengths. The production takes place for example by simultaneous evaporation (co-evaporation) from several sources of material.
Das Matrixmaterial kann für alle relevanten Wellenlängen transparent sein; es kann aber auch aus einem Material sein, das die emittierte Strahlung absorbiert, woraufhin die aufgenommene Strahlungsenergie via Förster- oder Dexter-Transfer an das Konvertermaterial abgegeben wird. Auch können auf die beschriebene Weise mehrere Konversionsschichten übereinander oder, unter Verwendung von Schattenmasken beim Aufdampfen, nebeneinander aufgebracht werden. Der Farbort des Konversionsbauelementes kann durch die Schichtdicke der aufgedampf- ten Konversionsschicht , die Konzentration der Emittermoleküle in der Matrix sowie die Flächenverhältnisse zwischen nebeneinander aufgebrachten Konversionsschichten beeinflusst werden.The matrix material can be transparent for all relevant wavelengths; but it can also be made of a material that absorbs the emitted radiation, whereupon the recorded radiation energy is delivered via Förster- or Dexter transfer to the converter material. Also on the a plurality of conversion layers are described above one another or, using shadow masks during vapor deposition, applied side by side. The color location of the conversion component can be influenced by the layer thickness of the deposited conversion layer, the concentration of the emitter molecules in the matrix and the area ratios between conversion layers applied side by side.
Neben dem lichtemittierenden Bauelement wird auch ein Verfahren zur Herstellung eines lichtemittierenden Bauelementes mit Wellenlängenkonverter angegeben, bei dem auf eine für Strahlungsemission vorgesehene Oberfläche eine Konversionsschicht aufgedampft wird.In addition to the light-emitting component, a method for producing a light-emitting component with wavelength converter is also specified, in which a conversion layer is vapor-deposited onto a surface provided for radiation emission.
Vorzugsweise ist mit dem Verfahren ein hier beschriebenes Bauelement herstellbar. Sämtliche in Verbindung mit dem Bauelement offenbarten Merkmale sind daher auch für das Verfahren offenbart.Preferably, with the method, a device described here can be produced. All features disclosed in connection with the component are therefore also disclosed for the method.
Es folgt eine genauere Beschreibung von Beispielen des lichtemittierenden Bauelementes und des Herstellungsverfahrens anhand der beigefügten Figuren, die verschiedene Ausführungsbeispiele im Querschnitt zeigen.The following is a more detailed description of examples of the light emitting device and the manufacturing method with reference to the attached figures, which show various embodiments in cross section.
Die Figur 1 zeigt ein Ausführungsbeispiel einer Top-Emitter- LED mit elektrisch leitfähigem Substrat im Querschnitt .1 shows an embodiment of a top emitter LED with electrically conductive substrate in cross section.
Die Figur 2 zeigt ein Ausführungsbeispiel einer Bottom-Emitter-LED mit elektrisch leitfähigem Substrat im Querschnitt . - S -2 shows an embodiment of a bottom emitter LED with electrically conductive substrate in cross section. - S -
Die Figur 3 zeigt ein Ausführungsbeispiel einer Top-Emitter- OLED ohne Rückseitenelektrode im Querschnitt.FIG. 3 shows an embodiment of a top emitter OLED without a backside electrode in cross section.
Die Figur 4 zeigt ein Ausführungsbeispiel einer Bottom-Emit- ter-OLED ohne Rückseitenelektrode im Querschnitt.FIG. 4 shows an exemplary embodiment of a bottom emitter OLED without a backside electrode in cross section.
In der Figur 1 ist ein erstes Ausführungsbeispiel in einem schematischen Querschnitt dargestellt. Eine als Rückseitenelektrode vorgesehene erste Elektrodenschicht 1 ist auf einer Rückseite eines elektrisch leitfähigen Substrates 2 aufgebracht. Auf der Vorderseite des Substrates 2 befindet sich eine Schichtstruktur 3, die an sich bekannte Schichten eines lichtemittierenden Bauelementes umfassen kann, deren Einzelheiten für die Erfindung nicht wesentlich und daher nicht dargestellt sind. Die Schichtstruktur 3 umfasst insbesondere die für Strahlungserzeugung vorgesehenen aktiven Schichten. Außerdem können Begrenzungsschichten oder für Strominjektion vorgesehene Mantelschichten vorgesehen sein. Auf der von dem Substrat 2 abgewandten Seite der Schichtstruktur 3 befindet sich eine zweite Elektrodenschicht 4, die in diesem Ausführungsbeispiel ganzflächig aufgebracht ist und aus einem Material besteht, das für die zu emittierende Strahlung transparent ist. Oberseitig ist auf der zweiten Elektrodenschicht 4 die Konversionsschicht 5 aufgebracht, die ein Matrixmaterial und ein Konvertermaterial umfasst, die vorzugsweise beide niedermolekulare organische Verbindungen sind. Die Strahlungsemission erfolgt ganzflächig nach oben in der durch den Pfeil dargestellten Richtung.FIG. 1 shows a first exemplary embodiment in a schematic cross section. A first electrode layer 1 provided as a backside electrode is applied to a rear side of an electrically conductive substrate 2. On the front side of the substrate 2 is a layer structure 3, which may comprise known per se layers of a light emitting device, the details of which are not essential to the invention and therefore not shown. The layer structure 3 comprises in particular the active layers intended for generating radiation. In addition, boundary layers or sheath layers provided for current injection may be provided. On the side facing away from the substrate 2 side of the layer structure 3 is a second electrode layer 4, which is applied over the entire surface in this embodiment and consists of a material which is transparent to the radiation to be emitted. On the upper side, on the second electrode layer 4, the conversion layer 5 is applied, which comprises a matrix material and a converter material, which are preferably both low molecular weight organic compounds. The radiation emission takes place over the entire area in the direction shown by the arrow.
Die Figur 2 zeigt einen der Figur 1 entsprechenden schematischen Querschnitt eines weiteren Ausführungsbeispiels, bei dem die Konversionsschicht 5 auf der Unterseite oder Rückseite des Bauelementes, das heißt, auf der rückseitigen Oberfläche der ersten Elektrodenschicht 1, aufgebracht ist. Hierbei sind das Substrat 2 und die erste Elektrodenschicht 1 aus einem für die zu emittierende Strahlung transparenten Material ausgebildet, und die Lichtemission erfolgt in der durch den Pfeil angedeuteten Richtung.FIG. 2 shows a schematic cross section corresponding to FIG. 1 of a further exemplary embodiment, in which the conversion layer 5 is on the underside or rear side of the component, that is to say on the rear side Surface of the first electrode layer 1, is applied. Here, the substrate 2 and the first electrode layer 1 are formed of a material transparent to the radiation to be emitted, and the light emission is in the direction indicated by the arrow.
Die Elektrodenschicht , die auf der für die Abstrahlung vorgesehenen Seite vorgesehen ist, kann aber zum Beispiel auch lichtundurchlässig sein und die Emissionsfläche ring- oder rahmenförmig umgeben. Die Konversionsschicht kann bei einer solchen Ausführungsform auf der Lichtaustrittsfläche innerhalb der Elektrodenschicht auf einer Oberfläche einer Schichtstruktur oder direkt auf dem Substratmaterial aufgebracht sein.The electrode layer, which is provided on the side intended for the radiation, but may for example also be opaque and ring-shaped or frame-shaped surrounding the emission surface. In such an embodiment, the conversion layer may be applied to the light exit surface within the electrode layer on a surface of a layer structure or directly on the substrate material.
Ein besonderer Vorteil der Erfindung ergibt sich bei Ausführungsformen, bei denen das lichtemittierende Bauelement eine niedermolekulare organische Leuchtdiode ist, so dass sowohl die elektrolumineszenten Schichten der Leuchtdiode als auch die Komponenten der Konversionsschicht in derselben Anlage aufgedampft werden können.A particular advantage of the invention results in embodiments in which the light-emitting component is a low molecular weight organic light-emitting diode, so that both the electroluminescent layers of the light-emitting diode and the components of the conversion layer can be vapor-deposited in the same system.
Bei einer Top-Emitter-OLED gemäß Figur 3 mit Dünnfilmver- kapselung kann die Konversionsschicht 5 unmittelbar nach dem Aufbringen der transparenten Deckelektrode, der zweiten Elektrodenschicht 4, hergestellt werden. Es sind also keinerlei zusätzliche Prozesse zur Beschichtung mit dem Konvertermaterial (zum Beispiel Rakeln, Siebdruck, Kleben) mehr nötig. Die erste Elektrodenschicht 1 ist bei diesem Ausführungsbeispiel auf der Vorderseite des Substrates 2 zwischen dem Substrat 2 und der Schichtstruktur 3 angeordnet. Bei einer Bottom-Emitter-OLED gemäß Figur 4 kann die Konversionsschicht 5 sogar gleichzeitig mit dem Herstellen der organischen Schichtstruktur 3 auf der Rückseite des Substrates 2 abgeschieden werden. Auch bei diesem Ausführungsbeispiel sind also keinerlei zusätzliche Prozesse zur Beschichtung mit dem Konvertermaterial (zum Beispiel Rakeln, Siebdruck, Kleben) mehr nötig.In a top emitter OLED according to FIG. 3 with thin-film encapsulation, the conversion layer 5 can be produced immediately after the application of the transparent cover electrode, the second electrode layer 4. So there are no additional processes for coating with the converter material (for example, doctoring, screen printing, gluing) more necessary. The first electrode layer 1 is arranged in this embodiment on the front side of the substrate 2 between the substrate 2 and the layer structure 3. In a bottom emitter OLED according to FIG. 4, the conversion layer 5 can even be deposited simultaneously with the production of the organic layer structure 3 on the back side of the substrate 2. Also in this embodiment, therefore, no additional processes for coating with the converter material (for example, doctor blades, screen printing, gluing) are more necessary.
Diese Patentanmeldung beansprucht die Prioritäten der deutschen Patentanmeldungen DE 102007046338.5 sowieThis patent application claims the priorities of German patent applications DE 102007046338.5 and
102007053069.4, deren Offenbarungsgehalt hiermit durch Rückbezug aufgenommen wird.102007053069.4, the disclosure of which is hereby incorporated by reference.
Die Erfindung ist nicht durch die Beschreibung anhand der Ausführungsbeispiele auf diese beschränkt. Vielmehr umfasst die Erfindung jedes neue Merkmal sowie jede Kombination von Merkmalen, was insbesondere jede Kombination von Merkmalen in den Patentansprüchen beinhaltet, auch wenn dieses Merkmal oder diese Kombination selbst nicht explizit in den Patentansprüchen oder Ausführungsbeispielen angegeben ist. The invention is not limited by the description based on the embodiments of these. Rather, the invention encompasses any novel feature as well as any combination of features, including in particular any combination of features in the claims, even if this feature or combination itself is not explicitly stated in the claims or exemplary embodiments.

Claims

Patentansprüche claims
1. Lichtemittierendes Bauelement mit Wellenlängenkonverter, bei dem - eine lichtemittierende Oberfläche mit einer Konversions- schicht (5) versehen ist, die ein Matrixmaterial und ein Konvertermaterial enthält, dadurch gekennzeichnet, dass1. A light-emitting component with wavelength converter, in which - a light-emitting surface is provided with a conversion layer (5) which contains a matrix material and a converter material, characterized in that
- sowohl das Matrixmaterial als auch das Konvertermaterial im Hochvakuum verdampfbare Materialien sind.- Both the matrix material and the converter material are evaporable materials in a high vacuum.
2. Lichtemittierendes Bauelement nach Anspruch 1, bei dem das Matrixmaterial und das Konvertermaterial so gewählt sind, dass sie zusammen mit Strahlungserzeugenden Schichten aufgedampft werden können.2. A light-emitting device according to claim 1, wherein the matrix material and the converter material are selected so that they can be vapor-deposited together with radiation-generating layers.
3. Lichtemittierendes Bauelement nach Anspruch 1 oder 2, bei dem sowohl das Matrixmaterial als auch das Konvertermaterial niedermolekulare organische Verbindungen umfasst.3. Light-emitting component according to claim 1 or 2, wherein both the matrix material and the converter material comprises low molecular weight organic compounds.
4. Lichtemittierendes Bauelement nach Anspruch 3, bei dem das Matrixmaterial ein Material umfasst, das ausgewählt ist aus der Gruppe, die aromatische Amine, Carbazole und aromatische Silanderivate enthält.4. A light-emitting device according to claim 3, wherein the matrix material comprises a material selected from the group consisting of aromatic amines, carbazoles and aromatic silane derivatives.
5. Lichtemittierendes Bauelement nach Anspruch 1 oder 2, bei dem das Matrixmaterial aus der Gruppe folgender Stoffe ausgewählt ist: MoO3, ZnS, MgF2, Ta2O5, TiO, Al2O3.5. The light-emitting component according to claim 1 or 2, wherein the matrix material is selected from the group of the following substances: MoO 3 , ZnS, MgF 2 , Ta 2 O 5 , TiO, Al 2 O 3 .
6. Lichtemittierendes Bauelement nach einem der Ansprüche 1 bis 5 , das eine organische Leuchtdiode bildet. 6. A light emitting device according to any one of claims 1 to 5, which forms an organic light emitting diode.
7. Verfahren zur Herstellung eines lichtemittierenden Bauelementes mit Wellenlängenkonverter, bei dem auf eine für Strahlungsemission vorgesehene Oberfläche eine Konversionsschicht (5) aufgedampft wird.7. A method for producing a light-emitting component with wavelength converter, wherein a conversion layer (5) is vapor-deposited on a surface provided for radiation emission.
8. Verfahren nach Anspruch 7 , bei dem das Aufdampfen aus einem Hochvakuum erfolgt.8. The method of claim 7, wherein the vapor deposition is carried out from a high vacuum.
9. Verfahren nach Anspruch 7 oder 8, bei dem die Konversionsschicht (5) ein aufgedampftes Matrixmaterial und mindestens ein aufgedampftes Konvertermaterial umfasst.9. The method of claim 7 or 8, wherein the conversion layer (5) comprises a vapor-deposited matrix material and at least one evaporated converter material.
10. Verfahren nach Anspruch 9, bei dem das Matrixmaterial und das Konvertermaterial niedermolekulare organische Verbindungen umfassen.10. The method of claim 9, wherein the matrix material and the converter material comprise low molecular weight organic compounds.
11. Verfahren nach Anspruch 10, bei dem das Matrixmaterial ausgewählt wird aus der Gruppe, die aromatische Amine, Carbazole und aromatische Silanderivate enthält.A process according to claim 10, wherein the matrix material is selected from the group comprising aromatic amines, carbazoles and aromatic silane derivatives.
12. Verfahren nach Anspruch 9, bei dem das Matrixmaterial das Matrixmaterial aus der Gruppe folgender Stoffe ausgewählt ist: MoO3, ZnS, MgF2, Ta2O5, TiO, Al2O3.12. The method of claim 9, wherein the matrix material, the matrix material is selected from the group consisting of the following materials: MoO 3 , ZnS, MgF 2 , Ta 2 O 5 , TiO, Al 2 O 3 .
13. Verfahren nach einem der Ansprüche 7 bis 12, bei dem das Aufdampfen in der selben Anlage erfolgt, mit der auch Strahlungserzeugende Schichten des Bauelementes aufgedampft werden. 13. The method according to any one of claims 7 to 12, wherein the vapor deposition takes place in the same system, with which also radiation-generating layers of the device are vapor-deposited.
14. Verfahren nach einem der Ansprüche 7 bis 13, bei dem die Konversionsschicht (5) auf eine Elektrodenschicht (1; 4) aus einem für emittierte Strahlung transparenten Material aufgebracht wird.14. The method according to any one of claims 7 to 13, wherein the conversion layer (5) on an electrode layer (1; 4) is applied from a transparent material for emitted radiation.
15. Verfahren nach einem der Ansprüche 7 bis 14, bei dem eine organische Leuchtdiode hergestellt wird. 15. The method according to any one of claims 7 to 14, wherein an organic light emitting diode is produced.
EP08801332A 2007-09-27 2008-09-15 Light-emitting component having a wavelength converter and production method Withdrawn EP2193558A1 (en)

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