EP2183653B1 - Linear voltage regulator - Google Patents

Linear voltage regulator Download PDF

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Publication number
EP2183653B1
EP2183653B1 EP08787129A EP08787129A EP2183653B1 EP 2183653 B1 EP2183653 B1 EP 2183653B1 EP 08787129 A EP08787129 A EP 08787129A EP 08787129 A EP08787129 A EP 08787129A EP 2183653 B1 EP2183653 B1 EP 2183653B1
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EP
European Patent Office
Prior art keywords
voltage
output
terminal
inverter
electrically coupled
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EP08787129A
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German (de)
French (fr)
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EP2183653A1 (en
Inventor
Seongwon Kim
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International Business Machines Corp
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International Business Machines Corp
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Priority claimed from US11/847,416 external-priority patent/US7847529B2/en
Priority claimed from US11/847,461 external-priority patent/US7855534B2/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of EP2183653A1 publication Critical patent/EP2183653A1/en
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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices

Definitions

  • Voltage regulators have been utilized to control voltages applied to devices.
  • a problem with the voltage regulators is that the voltage regulators have not been able to effectively remove both high frequency noise and low frequency noise from a voltage source.
  • the voltage regulators utilize at least two relatively expensive comparator chips which utilize a relatively large amount of power (see e.g. US2007/0188154 )
  • a linear voltage regulator in accordance with an exemplary embodiment includes a first circuit configured to receive the first voltage from a voltage source and to remove frequency components of the first voltage in a first frequency range to obtain an output voltage at a primary output node.
  • the linear voltage regulator further includes a second circuit having first and second inverters electrically coupled to the primary output node of the first circuit.
  • the second circuit is configured to receive the output voltage and to remove frequency components of the output voltage in a second frequency range.
  • the second frequency range is greater than the first frequency range.
  • a linear voltage regulator in accordance with another exemplary embodiment includes a first inverter having a first input terminal and a first output terminal.
  • the first input terminal is electrically coupled to the first output terminal.
  • the first input terminal is further electrically coupled to a capacitor which is further coupled to electrical ground.
  • the first inverter is further electrically coupled to a primary output node such a first voltage on the first output terminal is less than the output voltage at the primary output node.
  • the linear voltage regulator further includes a second inverter having a second input terminal and a second output terminal.
  • the second input terminal is electrically coupled to the first output terminal of the first inverter.
  • the second inverter is further electrically coupled to the primary output node and receiving the first voltage from the first inverter.
  • the linear voltage regulator further includes a p-channel field effect transistor (P-FET transistor) having a gate terminal, a drain terminal and a source terminal.
  • the source terminal is electrically coupled to a voltage source.
  • the drain terminal is coupled to the primary output node.
  • the gate terminal electrically communicates either directly or indirectly with the second output terminal of the second inverter, such that when the output voltage at the primary output node is increased, the first voltage on the first output terminal of the first inverter is less than the output voltage on the primary output node which induces the second inverter to output a high logic voltage on the second output terminal.
  • the P-FET transistor reduces the output voltage on the primary output node in response to the high logic voltage.
  • an electrical system 10 having a linear voltage regulator 14 in accordance with an exemplary embodiment is illustrated.
  • the electrical system further includes a voltage source 12 and a load 18.
  • An advantage of the linear voltage regulator 14 is that the regulator is able to output a voltage that has minimal voltage deviation for voltage-sensitive load devices.
  • the voltage source 12 is provided to output a voltage that may deviate from a desired voltage level.
  • the voltage source 12 is electrically coupled to the linear voltage regulator 14.
  • the linear voltage regulator 14 is provided to receive the voltage from the voltage source 12 and to output a voltage that minimal voltage deviation from a desired voltage level.
  • the linear voltage regulator 14 includes a circuit 20 and a circuit 22.
  • the circuit 20 is provided to remove frequency components of the voltage received from voltage source 12 in a first frequency range to obtain an output voltage at the primary voltage node 36 with reduced voltage deviation.
  • the circuit 20 is configured to remove frequency components of the voltage received from the voltage source 12 in the frequency range of 0 to 10 Megahertz.
  • the circuit 20 can remove frequency components in other frequency ranges.
  • the circuit 20 includes a voltage reference device 30, an operational amplifier 32, and a P-FET transistor 34.
  • the operational amplifier 32 has an inverting input terminal "-", a non-inverting input terminal "+”, and an output terminal.
  • the P-FET transistor has a gate terminal (G1), a source terminal (S1), and a drain terminal (D1).
  • the voltage reference device 30 is electrically connected to the inverting input terminal "-" of the operational amplifier 32.
  • the voltage reference device 30 is configured to output a desired reference voltage level.
  • the output terminal of the operational amplifier 32 is electrically coupled to the gate terminal (G1) of the P-FET transistor 34.
  • the non-inverting terminal "+” of the operational amplifier 32 is electrically coupled to the drain terminal (D1) of the P-FET transistor 34 and further coupled to the primary output node 36.
  • the P-FET transistor 34 increases current flowing from the source terminal (S1) to the drain terminal (D1) which causes the output voltage on the primary output node 36 to increase.
  • the P-FET transistor 34 decreases current flowing from the source terminal (S1) to the drain terminal (D1) which causes the output voltage on the primary output node 36 to decrease.
  • the circuit 22 is provided to remove frequency components of the voltage received from voltage source 12 in a second frequency range to obtain an output voltage at the primary voltage node 36 with reduced voltage deviation.
  • the circuit 22 is configured to remove frequency components of the voltage received from the voltage source 12 in the frequency range of 10 Megahertz to 6 Gigahertz.
  • the circuit 22 can remove frequency components in other frequency ranges.
  • the circuit 22 includes a comparator circuit 62, 50, inverters 52, 54, 56, 58, 60, and a P-FET transistor 62.
  • the comparator circuit 50 is provided to detect a voltage deviation on the primary output node 36.
  • the comparator circuit 50 includes inverters 80, 82 and a capacitor 84.
  • the inverter 80 includes a P-FET transistor 90, a FET transistor 92, an input terminal 94, and an output terminal 96.
  • the P-FET transistor 90 includes a gate terminal (G3), a source terminal (S3), and a drain terminal (D3).
  • the FET transistor 92 includes a gate terminal (G4), a source terminal (S4), and a drain terminal (D4).
  • the P-FET transistor 90 is electrically coupled to the FET transistor 92.
  • the gate terminals (G3), (G4) are electrically coupled together at the input terminal 94.
  • the source terminal (S3) is electrically coupled to the primary output node 36.
  • the drain terminal (D3) is electrically coupled to the source terminal (S4) at the output terminal 96.
  • the output terminal 96 is electrically coupled to the input terminal 94.
  • the terminal (D4) is electrically coupled to electrical ground.
  • the capacitor 84 is electrically coupled between the input terminal 94 and electrical ground.
  • the comparator circuit 50 when an output voltage at the primary output node 36 is increased, the voltage on the output terminal 96 of the inverter 80 is less than the output voltage on the primary output node 36 which induces the inverter 82 to output a high logic voltage on the output terminal 106.
  • the high logic voltage is utilized to subsequently induce the P-FET transistor 62 to reduce the output voltage on the primary output node 36 in response to the high logic voltage.
  • the output voltage at the primary output node 36 is decreased, the voltage on the output terminal 96 of the inverter 80 is greater than the output voltage on the primary output node 36 which induces the inverter 82 to output a low logic voltage on the output terminal 106.
  • the low logic voltage is subsequently utilized to induce the P-FET transistor 62 to increase the output voltage on the primary output node 36 in response to the low logic voltage.
  • the chain of inverters 52, 54, 56, 58, 60 are provided to amplify the output voltage from the comparator circuit 50 which is received by the gate terminal (G2) of the P-FET transistor 62.
  • the inverter 52 includes a P-FET transistor 110, a FET transistor 112, an input terminal 114, and an output terminal 116.
  • the P-FET transistor 110 includes a gate terminal (G7), a source terminal (S7), and a drain terminal (D7).
  • the FET transistor 112 includes a gate terminal (G8), a source terminal (S8), and a drain terminal (D8).
  • the P-FET transistor 110 is electrically coupled to the FET transistor 112.
  • the gate terminals (G7), (G8) are electrically coupled together at the input terminal 114.
  • the source terminal (S7) is electrically coupled to the primary output node 36.
  • the drain terminal (D7) is electrically coupled to the source terminal (S8) at the output terminal 116.
  • the output terminal 116 is electrically coupled to an input terminal 124.
  • the terminal (D8) is electrically coupled to electrical ground.
  • the inverter 52 receives an output voltage at the input terminal 114 from the comparator circuit 50 and outputs an inverted amplified output voltage at the output terminal 116.
  • the inverter 54 includes a P-FET transistor 120, a FET transistor 122, an input terminal 124, and an output terminal 126.
  • the P-FET transistor 120 includes a gate terminal (G9), a source terminal (S9), and a drain terminal (D9).
  • the FET transistor 122 includes a gate terminal (G10), a source terminal (S10), and a drain terminal (D10).
  • the P-FET transistor 120 is electrically coupled to the FET transistor 122.
  • the gate terminals (G9), (G10) are electrically coupled together at the input terminal 124.
  • the source terminal (S9) is electrically coupled to the primary output node 36.
  • the drain terminal (D9) is electrically coupled to the source terminal (S10) at the output terminal 126.
  • the output terminal 126 is electrically coupled to an input terminal 134.
  • the terminal (D10) is electrically coupled to electrical ground.
  • the inverter 54 receives an output voltage at the input terminal 124 from the inverter 52 and outputs an inverted amplified output voltage at the output terminal 126.
  • the output terminal 136 is electrically coupled to an input terminal 144.
  • the terminal (D12) is electrically coupled to electrical ground.
  • the inverter 56 receives an output voltage at the input terminal 134 from the inverter 54 and outputs an inverted amplified output voltage at the output terminal 136.
  • the inverter 58 includes a P-FET transistor 140, a FET transistor 142, an input terminal 144, and an output terminal 146.
  • the P-FET transistor 140 includes a gate terminal (G 13), a source terminal (S13), and a drain terminal (D13).
  • the FET transistor 142 includes a gate terminal (G14), a source terminal (S14), and a drain terminal (D14).
  • the P-FET transistor 140 is electrically coupled to the FET transistor 142.
  • the gate terminals (G13), (G14) are electrically coupled together at the input terminal 144.
  • the source terminal (S13) is electrically coupled to the primary output node 36.
  • the drain terminal (D13) is electrically coupled to the source terminal (S14) at the output terminal 146.
  • the output terminal 146 is electrically coupled to an input terminal 154.
  • the terminal (D14) is electrically coupled to electrical ground.
  • the inverter 58 receives an output voltage at the input terminal 144 from the inverter 56 and outputs an inverted amplified output voltage at the output terminal 146.
  • the inverter 60 includes a P-FET transistor 150, a FET transistor 152, an input terminal 154, and an output terminal 156.
  • the P-FET transistor 150 includes a gate terminal (G 15), a source terminal (S15), and a drain terminal (D15).
  • the FET transistor 152 includes a gate terminal (G16), a source terminal (S16), and a drain terminal (D 16).
  • the P-FET transistor 150 is electrically coupled to the FET transistor 152.
  • the gate terminals (G15), (G16) are electrically coupled together at the input terminal 154.
  • the source terminal (S15) is electrically coupled to the primary output node 36.
  • the drain terminal (D15) is electrically coupled to the source terminal (S16) at the output terminal 156.
  • the linear voltage regulator 14 could be constructed by removing inverters 52, 54, 56, 58, 60 where inverter 82 would be directly electrically coupled to the P-FET transistor 62.
  • the number of inverters in the chain of inverters to amplify the voltage from the comparator circuit 50 can be greater than or less than the number of inverters shown in the chain of inverters of Figure 1 .
  • the P-FET transistor 62 is provided to remove voltage deviations at the primary output node 36.
  • the P-FET transistor 62 is provided to remove frequency components of the output voltage in a second frequency range.
  • the P-FET transistor 62 includes a gate terminal (G2), a source terminal (S2), and a drain terminal (D2).
  • the gate terminal (G2) is electrically coupled to the output terminal 156 of the inverter 60.
  • the source terminal (S2) is electrically coupled to the voltage source 12.
  • the drain terminal (D2) is electrically coupled to the primary node 36.
  • the resistor 18 is electrically between the primary output node 36 and electrical ground. The resistor 18 corresponds to a load receiving the output voltage from the linear voltage regulator 14.
  • the P-FET transistor 62 When the P-FET transistor 62 receives a high logic voltage from the inverter 60 at the gate terminal (G2), the P-FET transistor 62 decreases current flowing therethrough to reduce the output voltage on the primary output node 36 in response to the high logic voltage. Alternately, when the P-FET transistor 62 receives a low logic voltage from the inverter 60 at the gate terminal (G2), the P-FET transistor 62 increases current flowing therethrough to increase the output voltage on the primary output node 36 in response to the low logic voltage.
  • a voltage curve 170 corresponds to an exemplary output voltage generated by the voltage source 12. As shown, the voltage curve 170 has oscillatory shape over time.
  • a voltage curve 180 corresponds to an output voltage generated by the linear voltage regulator 14 at the primary output node 36. As shown, the voltage curve 180 is relatively constant over time as desired.
  • a voltage curve 190 corresponds to an output voltage at the output terminal 96 of the comparator 50.
  • a voltage curve 200 corresponds to a voltage received at the gate terminal (G2) of the P-FET transistor 62 for controlling operation of the P-FET transistor 62.
  • the circuit 20 of the linear voltage regulator 14 receives a first voltage from the voltage source 12.
  • the circuit 20 has the primary output node 36.
  • the circuit 20 removes frequency components of the first voltage in a first frequency range to obtain an output voltage at the primary output node 36.
  • the circuit 22 of the linear voltage regulator 14 has inverters 80, 82 electrically coupled either directly or indirectly to the primary output node 36 to remove frequency components of the output voltage in a second frequency range.
  • the second frequency range is greater than the first frequency range.
  • the step 224 is implemented utilizing steps 230-240.
  • the inverter 80 outputs a second voltage on the output terminal 96 that is less than the output voltage on the primary output node 36, when the output voltage at the primary output node 36 is increased.
  • the P-FET transistor 62 reduces the output voltage on the primary output node 36 in response to the high logic voltage.
  • the inverter 80 outputs the second voltage on the output terminal 96 that is greater than the output voltage on the primary output node 36, when the output voltage at the primary output node 36 is decreased.
  • the inverter 82 outputs a low logic voltage on the output terminal 106 in response to the second voltage being greater than the output voltage.

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Description

    FIELD OF THE INVENTION
  • This application relates to a linear voltage regulator.
  • BACKGROUND OF THE INVENTION
  • Voltage regulators have been utilized to control voltages applied to devices. A problem with the voltage regulators is that the voltage regulators have not been able to effectively remove both high frequency noise and low frequency noise from a voltage source. Further, the voltage regulators utilize at least two relatively expensive comparator chips which utilize a relatively large amount of power (see e.g. US2007/0188154 )
  • Accordingly, the inventor herein has recognized a need for an improved voltage regulator that minimizes and/or eliminates the above-mentioned problems.
  • DISCLOSURE OF THE INVENTION
  • A linear voltage regulator in accordance with an exemplary embodiment is provided. The linear voltage regulator includes a first circuit configured to receive the first voltage from a voltage source and to remove frequency components of the first voltage in a first frequency range to obtain an output voltage at a primary output node. The linear voltage regulator further includes a second circuit having first and second inverters electrically coupled to the primary output node of the first circuit. The second circuit is configured to receive the output voltage and to remove frequency components of the output voltage in a second frequency range. The second frequency range is greater than the first frequency range.
  • A linear voltage regulator in accordance with another exemplary embodiment is provided. The linear voltage regulator includes a first inverter having a first input terminal and a first output terminal. The first input terminal is electrically coupled to the first output terminal. The first input terminal is further electrically coupled to a capacitor which is further coupled to electrical ground. The first inverter is further electrically coupled to a primary output node such a first voltage on the first output terminal is less than the output voltage at the primary output node. The linear voltage regulator further includes a second inverter having a second input terminal and a second output terminal. The second input terminal is electrically coupled to the first output terminal of the first inverter. The second inverter is further electrically coupled to the primary output node and receiving the first voltage from the first inverter. The linear voltage regulator further includes a p-channel field effect transistor (P-FET transistor) having a gate terminal, a drain terminal and a source terminal. The source terminal is electrically coupled to a voltage source. The drain terminal is coupled to the primary output node. The gate terminal electrically communicates either directly or indirectly with the second output terminal of the second inverter, such that when the output voltage at the primary output node is increased, the first voltage on the first output terminal of the first inverter is less than the output voltage on the primary output node which induces the second inverter to output a high logic voltage on the second output terminal. The P-FET transistor reduces the output voltage on the primary output node in response to the high logic voltage.
  • BRIEF DESCRIPTION OF THE DRAWINGS
    • Figure 1 is an electrical schematic of an electrical system having a linear voltage regulator in accordance with an exemplary embodiment;
    • Figure 2 is an electrical schematic of a comparator circuit utilized in the linear voltage regulator of Figure 1;
    • Figure 3 is an electrical schematic of a plurality of inverters utilized in the linear voltage regulator of Figure 1;
    • Figure 4 is a schematic of a voltage signal output by a voltage source in the electrical system of Figure 1;
    • Figure 5 is a schematic of a voltage signal output on a primary output node of the linear voltage regulator of Figure 1;
    • Figure 6 is a schematic of a voltage signal output on a node in the comparator circuit of Figure 2;
    • Figure 7 is a schematic of a voltage signal output on a PFET transistor utilized in the linear voltage regulator of Figure 1; and
    • Figures 8-9 are flowcharts of a method for regulating a voltage using the linear voltage regulator of Figure 1 in accordance with another exemplary embodiment.
    DESCRIPTION OF EMBODIMENTS
  • Referring to Figure 1, an electrical system 10 having a linear voltage regulator 14 in accordance with an exemplary embodiment is illustrated. The electrical system further includes a voltage source 12 and a load 18. An advantage of the linear voltage regulator 14 is that the regulator is able to output a voltage that has minimal voltage deviation for voltage-sensitive load devices.
  • The voltage source 12 is provided to output a voltage that may deviate from a desired voltage level. The voltage source 12 is electrically coupled to the linear voltage regulator 14.
  • The linear voltage regulator 14 is provided to receive the voltage from the voltage source 12 and to output a voltage that minimal voltage deviation from a desired voltage level. The linear voltage regulator 14 includes a circuit 20 and a circuit 22.
  • The circuit 20 is provided to remove frequency components of the voltage received from voltage source 12 in a first frequency range to obtain an output voltage at the primary voltage node 36 with reduced voltage deviation. In one exemplary embodiment, the circuit 20 is configured to remove frequency components of the voltage received from the voltage source 12 in the frequency range of 0 to 10 Megahertz. Of course, in alternative embodiments of circuit 20, the circuit 20 can remove frequency components in other frequency ranges. The circuit 20 includes a voltage reference device 30, an operational amplifier 32, and a P-FET transistor 34. The operational amplifier 32 has an inverting input terminal "-", a non-inverting input terminal "+", and an output terminal. The P-FET transistor has a gate terminal (G1), a source terminal (S1), and a drain terminal (D1). The voltage reference device 30 is electrically connected to the inverting input terminal "-" of the operational amplifier 32. The voltage reference device 30 is configured to output a desired reference voltage level. The output terminal of the operational amplifier 32 is electrically coupled to the gate terminal (G1) of the P-FET transistor 34. The non-inverting terminal "+" of the operational amplifier 32 is electrically coupled to the drain terminal (D1) of the P-FET transistor 34 and further coupled to the primary output node 36.
  • During operation of the circuit 20, when the output voltage of the voltage source 12 decreases, the voltage received by the non-inverting terminal "+" of the operational amplifier 32 has a low logic voltage relative to a high logic voltage on the inverting terminal "-", which induces the operational amplifier 32 to output a low logic voltage. In response to the low logic voltage on the gate terminal (G1) of the P-FET transistor 34, the P-FET transistor 34 increases current flowing from the source terminal (S1) to the drain terminal (D1) which causes the output voltage on the primary output node 36 to increase. Alternately, when the output voltage of the voltage source 12 increases, the voltage received by the non-inverting terminal "+" of the operational amplifier 32 has a high logic voltage relative to a low logic voltage on the inverting terminal "-", which induces the operational amplifier 32 to output a high logic voltage. In response to the high logic voltage on the gate terminal (G1) of the P-FET transistor 34, the P-FET transistor 34 decreases current flowing from the source terminal (S1) to the drain terminal (D1) which causes the output voltage on the primary output node 36 to decrease.
  • The circuit 22 is provided to remove frequency components of the voltage received from voltage source 12 in a second frequency range to obtain an output voltage at the primary voltage node 36 with reduced voltage deviation. In one exemplary embodiment, the circuit 22 is configured to remove frequency components of the voltage received from the voltage source 12 in the frequency range of 10 Megahertz to 6 Gigahertz. Of course, in alternative embodiments of circuit 22, the circuit 22 can remove frequency components in other frequency ranges. The circuit 22 includes a comparator circuit 62, 50, inverters 52, 54, 56, 58, 60, and a P-FET transistor 62.
  • Referring to Figures 1 and 2, the comparator circuit 50 is provided to detect a voltage deviation on the primary output node 36. The comparator circuit 50 includes inverters 80, 82 and a capacitor 84.
  • The inverter 80 includes a P-FET transistor 90, a FET transistor 92, an input terminal 94, and an output terminal 96. The P-FET transistor 90 includes a gate terminal (G3), a source terminal (S3), and a drain terminal (D3). The FET transistor 92 includes a gate terminal (G4), a source terminal (S4), and a drain terminal (D4). The P-FET transistor 90 is electrically coupled to the FET transistor 92. In particular, the gate terminals (G3), (G4) are electrically coupled together at the input terminal 94. The source terminal (S3) is electrically coupled to the primary output node 36. The drain terminal (D3) is electrically coupled to the source terminal (S4) at the output terminal 96. The output terminal 96 is electrically coupled to the input terminal 94. The terminal (D4) is electrically coupled to electrical ground. The capacitor 84 is electrically coupled between the input terminal 94 and electrical ground. During operation, a voltage on the output terminal 96 is less than the output voltage at the primary output node 36. In particular, a voltage on the output terminal 96 is approximately one-half of the voltage at the primary output node 36.
  • The inverter 82 includes a P-FET transistor 100, a FET transistor 102, an input terminal 104, and an output terminal 106. The P-FET transistor 100 includes a gate terminal (G5), a source terminal (S5), and a drain terminal (D5). The FET transistor 102 includes a gate terminal (G6), a source terminal (S6), and a drain terminal (D6). The P-FET transistor 100 is electrically coupled to the FET transistor 102. In particular, the gate terminals (G5), (G6) are electrically coupled together at the input terminal 104. The input terminal 104 is electrically coupled to the output terminal 96. The source terminal (S5) is electrically coupled to the primary output node 36. The drain terminal (D5) is electrically coupled to the source terminal (S6) at the output terminal 106. The output terminal 106 is electrically coupled to an input terminal 114. The terminal (D6) is electrically coupled to electrical ground.
  • During operation of the comparator circuit 50, when an output voltage at the primary output node 36 is increased, the voltage on the output terminal 96 of the inverter 80 is less than the output voltage on the primary output node 36 which induces the inverter 82 to output a high logic voltage on the output terminal 106. The high logic voltage is utilized to subsequently induce the P-FET transistor 62 to reduce the output voltage on the primary output node 36 in response to the high logic voltage. Alternately, when the output voltage at the primary output node 36 is decreased, the voltage on the output terminal 96 of the inverter 80 is greater than the output voltage on the primary output node 36 which induces the inverter 82 to output a low logic voltage on the output terminal 106. The low logic voltage is subsequently utilized to induce the P-FET transistor 62 to increase the output voltage on the primary output node 36 in response to the low logic voltage.
  • Referring to Figures 1 and 3, the chain of inverters 52, 54, 56, 58, 60 are provided to amplify the output voltage from the comparator circuit 50 which is received by the gate terminal (G2) of the P-FET transistor 62.
  • The inverter 52 includes a P-FET transistor 110, a FET transistor 112, an input terminal 114, and an output terminal 116. The P-FET transistor 110 includes a gate terminal (G7), a source terminal (S7), and a drain terminal (D7). The FET transistor 112 includes a gate terminal (G8), a source terminal (S8), and a drain terminal (D8). The P-FET transistor 110 is electrically coupled to the FET transistor 112. In particular, the gate terminals (G7), (G8) are electrically coupled together at the input terminal 114. The source terminal (S7) is electrically coupled to the primary output node 36. The drain terminal (D7) is electrically coupled to the source terminal (S8) at the output terminal 116. The output terminal 116 is electrically coupled to an input terminal 124. The terminal (D8) is electrically coupled to electrical ground. During operation, the inverter 52 receives an output voltage at the input terminal 114 from the comparator circuit 50 and outputs an inverted amplified output voltage at the output terminal 116.
  • The inverter 54 includes a P-FET transistor 120, a FET transistor 122, an input terminal 124, and an output terminal 126. The P-FET transistor 120 includes a gate terminal (G9), a source terminal (S9), and a drain terminal (D9). The FET transistor 122 includes a gate terminal (G10), a source terminal (S10), and a drain terminal (D10). The P-FET transistor 120 is electrically coupled to the FET transistor 122. In particular, the gate terminals (G9), (G10) are electrically coupled together at the input terminal 124. The source terminal (S9) is electrically coupled to the primary output node 36. The drain terminal (D9) is electrically coupled to the source terminal (S10) at the output terminal 126. The output terminal 126 is electrically coupled to an input terminal 134. The terminal (D10) is electrically coupled to electrical ground. During operation, the inverter 54 receives an output voltage at the input terminal 124 from the inverter 52 and outputs an inverted amplified output voltage at the output terminal 126.
  • The inverter 56 includes a P-FET transistor 130, a FET transistor 132, an input terminal 134, and an output terminal 136. The P-FET transistor 130 includes a gate terminal (G11), a source terminal (S11), and a drain terminal (D11). The FET transistor 132 includes a gate terminal (G 12), a source terminal (S12), and a drain terminal (D 12). The P-FET transistor 130 is electrically coupled to the FET transistor 132. In particular, the gate terminals (G11), (G12) are electrically coupled together at the input terminal 134. The source terminal (S11) is electrically coupled to the primary output node 36. The drain terminal (D11) is electrically coupled to the source terminal (S12) at the output terminal 136. The output terminal 136 is electrically coupled to an input terminal 144. The terminal (D12) is electrically coupled to electrical ground. During operation, the inverter 56 receives an output voltage at the input terminal 134 from the inverter 54 and outputs an inverted amplified output voltage at the output terminal 136.
  • The inverter 58 includes a P-FET transistor 140, a FET transistor 142, an input terminal 144, and an output terminal 146. The P-FET transistor 140 includes a gate terminal (G 13), a source terminal (S13), and a drain terminal (D13). The FET transistor 142 includes a gate terminal (G14), a source terminal (S14), and a drain terminal (D14). The P-FET transistor 140 is electrically coupled to the FET transistor 142. In particular, the gate terminals (G13), (G14) are electrically coupled together at the input terminal 144. The source terminal (S13) is electrically coupled to the primary output node 36. The drain terminal (D13) is electrically coupled to the source terminal (S14) at the output terminal 146. The output terminal 146 is electrically coupled to an input terminal 154. The terminal (D14) is electrically coupled to electrical ground. During operation, the inverter 58 receives an output voltage at the input terminal 144 from the inverter 56 and outputs an inverted amplified output voltage at the output terminal 146.
  • The inverter 60 includes a P-FET transistor 150, a FET transistor 152, an input terminal 154, and an output terminal 156. The P-FET transistor 150 includes a gate terminal (G 15), a source terminal (S15), and a drain terminal (D15). The FET transistor 152 includes a gate terminal (G16), a source terminal (S16), and a drain terminal (D 16). The P-FET transistor 150 is electrically coupled to the FET transistor 152. In particular, the gate terminals (G15), (G16) are electrically coupled together at the input terminal 154. The source terminal (S15) is electrically coupled to the primary output node 36. The drain terminal (D15) is electrically coupled to the source terminal (S16) at the output terminal 156. The output terminal 156 is electrically coupled to a gate terminal (G2) of the P-FET transistor 62. The terminal (D16) is electrically coupled to electrical ground. During operation, the inverter 60 receives an output voltage at the input terminal 154 from the inverter 58 and outputs an inverted amplified output voltage at the output terminal 156.
  • It should be noted that in an alternative embodiment, the linear voltage regulator 14 could be constructed by removing inverters 52, 54, 56, 58, 60 where inverter 82 would be directly electrically coupled to the P-FET transistor 62. Further, in other alternative embodiments, the number of inverters in the chain of inverters to amplify the voltage from the comparator circuit 50 can be greater than or less than the number of inverters shown in the chain of inverters of Figure 1.
  • Referring to Figure 1, the P-FET transistor 62 is provided to remove voltage deviations at the primary output node 36. In particular, the P-FET transistor 62 is provided to remove frequency components of the output voltage in a second frequency range. The P-FET transistor 62 includes a gate terminal (G2), a source terminal (S2), and a drain terminal (D2). The gate terminal (G2) is electrically coupled to the output terminal 156 of the inverter 60. The source terminal (S2) is electrically coupled to the voltage source 12. The drain terminal (D2) is electrically coupled to the primary node 36. The resistor 18 is electrically between the primary output node 36 and electrical ground. The resistor 18 corresponds to a load receiving the output voltage from the linear voltage regulator 14. During operation, when the P-FET transistor 62 receives a high logic voltage from the inverter 60 at the gate terminal (G2), the P-FET transistor 62 decreases current flowing therethrough to reduce the output voltage on the primary output node 36 in response to the high logic voltage. Alternately, when the P-FET transistor 62 receives a low logic voltage from the inverter 60 at the gate terminal (G2), the P-FET transistor 62 increases current flowing therethrough to increase the output voltage on the primary output node 36 in response to the low logic voltage.
  • Referring to Figures 4-7, a brief explanation of exemplary schematics of signals generated by the linear voltage regulator 14 will now be provided. Referring to Figure 4, a voltage curve 170 corresponds to an exemplary output voltage generated by the voltage source 12. As shown, the voltage curve 170 has oscillatory shape over time. Referring to Figure 5, a voltage curve 180 corresponds to an output voltage generated by the linear voltage regulator 14 at the primary output node 36. As shown, the voltage curve 180 is relatively constant over time as desired. Referring to Figure 6, a voltage curve 190 corresponds to an output voltage at the output terminal 96 of the comparator 50. Referring to Figure 7, a voltage curve 200 corresponds to a voltage received at the gate terminal (G2) of the P-FET transistor 62 for controlling operation of the P-FET transistor 62.
  • Referring to Figures 8-9, a flowchart of a method for regulating a voltage utilizing the linear voltage regulator 14 will now be described.
  • At step 220, the circuit 20 of the linear voltage regulator 14 receives a first voltage from the voltage source 12. The circuit 20 has the primary output node 36.
  • At step 222, the circuit 20 removes frequency components of the first voltage in a first frequency range to obtain an output voltage at the primary output node 36.
  • At step 224, the circuit 22 of the linear voltage regulator 14 has inverters 80, 82 electrically coupled either directly or indirectly to the primary output node 36 to remove frequency components of the output voltage in a second frequency range. The second frequency range is greater than the first frequency range. The step 224 is implemented utilizing steps 230-240.
  • At step 230, the inverter 80 outputs a second voltage on the output terminal 96 that is less than the output voltage on the primary output node 36, when the output voltage at the primary output node 36 is increased.
  • At step 232, the inverter 82 outputs a high logic voltage on the output terminal 106 in response to the second voltage being less than the output voltage.
  • At step 234, the P-FET transistor 62 reduces the output voltage on the primary output node 36 in response to the high logic voltage.
  • At step 236, the inverter 80 outputs the second voltage on the output terminal 96 that is greater than the output voltage on the primary output node 36, when the output voltage at the primary output node 36 is decreased.
  • At step 238, the inverter 82 outputs a low logic voltage on the output terminal 106 in response to the second voltage being greater than the output voltage.
  • At step 240, the P-FET transistor 62 increases the output voltage on the primary output node 36 in response to the low logic voltage. After step 240, the method returns to step 220.
  • The linear voltage regulator provides a substantial advantage over other regulators. In particular, the linear voltage regulator provides a technical effect of removing highfrequency components of a voltage utilizing a plurality of inverters.
  • While the invention is described with reference to an exemplary embodiment, it will be understood by those skilled in the art that various changes may be made and equivalent elements may be substituted for elements thereof without departing from the scope of the invention. In addition, many modifications may be made to the teachings of the invention to adapt to a particular situation without departing from the scope thereof. Therefore, it is intended that the invention not be limited the embodiment disclosed for carrying out this invention, but that the invention includes all embodiments falling with the scope of the intended claims. Moreover, the use of the term's first, second, etc. does not denote any order of importance, but rather the term's first, second, etc. are used to distinguish one element from another.

Claims (9)

  1. A linear voltage regulator, comprising:
    a first circuit (20) configured to receive a first voltage from a voltage source and to remove frequency components of the first voltage in a first frequency range to obtain an output voltage at a primary output node; and
    a second circuit (22) having first and second inverters electrically coupled to the primary output node of the first circuit, the second circuit configured to receive the output voltage and to remove frequency components of the output voltage in a second frequency range, the frequencies in the second frequency range being higher than the frequencies in the first frequency range;
    the first inverter having a first input terminal and a first output terminal, the first input terminal being electrically coupled to the first output terminal, the first input terminal being further electrically coupled to a capacitor which is further coupled to electrical ground, the first inverter being further electrically coupled to the primary output node such a second voltage on the first output terminal is less than the output voltage at the primary output node; and
    the second inverter having a second input terminal and a second output terminal, the second input terminal being electrically coupled to the first output terminal of the first inverter, the second inverter being further electrically coupled to the primary output node; and the second circuit further comprising a P-FET (62) transistor having a gate terminal, a drain terminal and a source terminal, the source terminal being electrically coupled to the voltage source, the drain terminal being electrically coupled to the primary output node, the gate terminal electrically communicating either directly or indirectly with the second output terminal of the second inverter, such that when the output voltage at the primary output node is increased, the second voltage on the first output terminal of the first inverter is less than the output voltage on the primary output node which induces the second inverter to output a high logic voltage on the second output terminal, and the P-FET transistor reduces the output voltage on the primary output node in response to the high logic voltage.
  2. The linear voltage regulator of claim 1, wherein when the output voltage at the primary output node is decreased, the second voltage on the first output terminal of the first inverter is greater than the output voltage on the primary output node which induces the second inverter to output a low logic voltage on the second output terminal, and the P-FET transistor increases the output voltage on the primary output node in response to the low logic voltage.
  3. The linear voltage regulator of claim 1, further comprising at least third and fourth inverters electrically coupled in series between the second output terminal of the second inverter and the gate terminal of the P-FET transistor.
  4. The linear voltage regulator of claim 1, wherein the first frequency range is 0 to 10 Megahertz.
  5. The linear voltage regulator of claim 1, wherein the second frequency range is 10 Megahertz to 6 Gigahertz.
  6. A method for regulating a voltage using a linear voltage regulator, the linear voltage regulator having a first circuit (20) with a primary output node and a second circuit (22) having first and second inverters electrically coupled to the primary output node, the method comprising:
    receiving a first voltage from a voltage source at the first circuit;
    removing frequency components of the first voltage in a first frequency range to obtain an output voltage at the primary output node utilizing the first circuit; and
    removing frequency components of the output voltage in a second frequency range utilizing the first and second inverters of the second circuit, the second frequency range being greater than the first frequency range;
    the second circuit further including a P-FET transistor (62), the first inverter having a first input terminal and a first output terminal, the first input terminal being electrically coupled to the first output terminal, the first input terminal being further electrically coupled to a capacitor which is further coupled to electrical ground, the first inverter being further electrically coupled to the primary output node, the second inverter having a second input terminal and a second output terminal, the second input terminal being electrically coupled to the first output terminal of the first inverter, the second inverter being further electrically coupled to the primary output node, the P-FET transistor having a gate terminal, a drain terminal and a source terminal, the source terminal being electrically coupled to the voltage source, the drain terminal being electrically coupled to the primary output node, the gate terminal electrically communicating either directly or indirectly with the second output terminal of the second inverter, wherein removing frequency components of the output voltage in the second frequency range utilizing the second circuit, comprises:
    outputting a second voltage on the first output terminal of the first inverter that is less than the output voltage on the primary output node, when the output voltage at the primary output node is increased;
    outputting a high logic voltage from the second inverter on the second output terminal in response to the second voltage being less than the output voltage; and
    reducing the output voltage on the primary output node in response to the high logic voltage utilizing the P-FET transistor.
  7. The method of claim 6, wherein removing frequency components of the output voltage in the second frequency range utilizing the second circuit, further comprises:
    outputting the second voltage on the first output terminal of the first inverter that is greater than the output voltage on the primary output node, when the output voltage at the primary output node is decreased;
    outputting a low logic voltage from the second inverter on the second output terminal in response to the second voltage being greater than the output voltage; and
    increasing the output voltage on the primary output node in response to the low logic voltage utilizing the P-FET transistor.
  8. The method of claim 6, wherein the first frequency range is 0 to 10 Megahertz.
  9. The method of claim 6, wherein the second frequency range is 10 Megahertz to 6 Gigahertz.
EP08787129A 2007-08-30 2008-08-12 Linear voltage regulator Active EP2183653B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/847,416 US7847529B2 (en) 2007-08-30 2007-08-30 Dual loop linear voltage regulator with high frequency noise reduction
US11/847,461 US7855534B2 (en) 2007-08-30 2007-08-30 Method for regulating a voltage using a dual loop linear voltage regulator with high frequency noise reduction
PCT/EP2008/060565 WO2009027220A1 (en) 2007-08-30 2008-08-12 Linear voltage regulator

Publications (2)

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EP2183653A1 EP2183653A1 (en) 2010-05-12
EP2183653B1 true EP2183653B1 (en) 2013-01-02

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EP (1) EP2183653B1 (en)
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Publication number Priority date Publication date Assignee Title
US4952863A (en) * 1989-12-20 1990-08-28 International Business Machines Corporation Voltage regulator with power boost system
JP2006053829A (en) * 2004-08-13 2006-02-23 Mitsunori Katsu Semiconductor integrated circuit incorporating voltage regulator
US7301320B2 (en) * 2005-01-21 2007-11-27 International Business Machines Corporation On-chip high frequency power supply noise sensor
TW200731046A (en) * 2006-02-14 2007-08-16 Richtek Techohnology Corp Linear voltage regulator and control method thereof
US7508177B2 (en) * 2007-06-08 2009-03-24 Freescale Semiconductor, Inc. Method and circuit for reducing regulator output noise
JP4642830B2 (en) * 2007-11-06 2011-03-02 株式会社リコー Power supply apparatus and power supply method thereof

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JP2010537335A (en) 2010-12-02
EP2183653A1 (en) 2010-05-12
WO2009027220A1 (en) 2009-03-05
KR20100053560A (en) 2010-05-20
CN101784975A (en) 2010-07-21
JP5295240B2 (en) 2013-09-18

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