EP2174392B1 - Dispositif de laser à semi-conducteur - Google Patents

Dispositif de laser à semi-conducteur Download PDF

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EP2174392B1
EP2174392B1 EP08779009.3A EP08779009A EP2174392B1 EP 2174392 B1 EP2174392 B1 EP 2174392B1 EP 08779009 A EP08779009 A EP 08779009A EP 2174392 B1 EP2174392 B1 EP 2174392B1
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wavelengths
cavity
output
wavelength
optical
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EP2174392A1 (fr
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Boudewijn Docter
Stefano Beri
Meint Koert Smit
Fouad Karouta
Xaverius Jacques Maria Leijtens
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Effect Photonics BV
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Effect Photonics BV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0268—Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0656—Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1212—Chirped grating
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Definitions

  • the present invention is directed to a semiconductor laser device comprising a first resonator section for resonating an optical resonator signal for providing an optical output signal at an output of said laser device.
  • Semiconductor laser devices as described above are generally known and widely used in many applications in a variety of industries, such as for example telecommunications industry.
  • FTTH/FTTP requires a large volume of optical sources and therefore it will open a worldwide market for low-cost tunable lasers.
  • a successful device for FTTH applications is a cheap, easy-tunable laser which operates in a small number of channels (4-8 wavelengths).
  • a successful device requires a higher performance operation in a larger number of channels (16-32 wavelengths).
  • Today's tunable sources usually consist of an optical laser cavity that can resonate at a large number of wavelengths. Two or three tunable elements inside the cavity are used for selecting the right wavelength out of a multitude. The relation between wavelength and control currents is complicated, and a complex control algorithm is needed for getting stable operation at the right wavelength. To provide the algorithm with the proper control data an extensive and expensive characterization of each laser is necessary.
  • JPH 03 274 784 A relates to a semiconductor laser device having a narrow spectral line and variable in wavelength within a gain range, by employing dual-laser structure in which one laser is furnished with means for feeding a specific wavelength within the gain range back to an active layer.
  • a dual-resonator laser has a nonreflective film on one end, and it is coupled through an object lens to an external refractive grating. The light from the laser is fed back to an active layer to provide single-mode oscillation with a narrow spectral line of selected wavelength.
  • the angle of the reflective grating is varied by a rotating mechanism to vary the feedback wavelength so that the wavelength can be varied within the range of gain of the first and the second semiconductor lasers.
  • the wavelength can be continuously varied by controlling currents to said first and second semiconductor lasers.
  • EP 0 762 573 A1 relates to a laser light source apparatus comprising a compound cavity and an optical gain medium.
  • the compound cavity includes first, second, and third optical reflection members disposed along the optical axis.
  • the first optical reflection member has a light wavelength selectivity.
  • At least one of the first to third optical reflection members can change its own position on an optical axis in relation to the other reflection members.
  • Two of the first to third optical reflection members are provided opposite to each other with the optical gain medium inserted therebetween, thereby forming a laser light source.
  • the other one optical reflection member is provided so as to form a light path for feeding laser light emitted from the laser light source back to the laser light source.
  • US 2005/0249256 A1 relates to a monolithically integrated wavelength switchable laser comprising three coupled Fabry-Perot cavities.
  • the length and consequently the free spectral range of the first cavity are designed such that the resonant peaks correspond substantially to a set of discrete operating wavelengths separated by a constant channel spacing.
  • the second cavity has a slightly different length so that only one resonant peak coincides with one of the resonant peaks of the first cavity over the spectral window of the material gain.
  • the lasing action occurs at the common resonant wavelength.
  • the two cavities are coupled through a third short cavity that produces a certain coupling loss and phase relationship between the first and the second cavities in order to achieve an optimal mode selectivity of the combined cavity laser.
  • both the first and the second cavities are forward biased to provide optical gains for the laser action.
  • the second cavity is tuned by varying the refractive index of at least a portion of the waveguide within the cavity through an electrical means, resulting in wavelength switching of the laser among the set of discrete operating wavelengths as determined by the first cavity.
  • US 2002/0118711 A1 relates to a wavelength-tunable laser consisting of a resonant semiconductor cavity coupled to a sampled Bragg reflector grating having reflectivity peaks for N optical frequencies.
  • the resonant cavity is formed of two opposite reflector members that are not wavelength selective and delimit an amplifier section coupled to a phase tuning section.
  • the optical length of the cavity is adjustable electro-optically as a function of a control voltage applied to it.
  • the laser can be tuned quickly over a wide band.
  • US 2005/0135449 A1 relates to various methods and apparatuses in which an array of optical gain mediums capable of lasing are contained in a single integral unit.
  • the array may contain four or more optical gain mediums capable of lasing.
  • Each optical gain medium capable of lasing supplies a separate optical signal containing a band of wavelengths different than the other optical gain mediums capable of lasing in the array to a first multiplexer/demultiplexer.
  • a connection for an output fiber exists to route an optical signal to and from a passive optical network.
  • WO 2008120024 A1 relates to tunable distributed Bragg reflector (DBR) semiconductor lasers, in particular a DBR laser with a branched optical waveguide within which a plurality of differently shaped lasing cavities may be formed, and a method of operation of such a laser.
  • the laser may comprise a phase control section, gain section, a sampled grating DBR giving a comb-line spectrum and two tunable, chirped DBRs for broadband frequency training and a coupling section.
  • the frequency routing device has an optical grating having unequal length waveguides to form paths.
  • a method of turning on a laser having a waveguide grating to a stable operating condition comprises the steps of applying an initial current to a first amplifier and maintaining a second amplifier off; allowing the laser to reach thermal equilibrium; applying an operating current to the second amplifier; and applying another operating current to the first amplifier to stably operate the laser.
  • Proposed is a tuning approach in which a laser is used that can operate only at a discrete set of equally spaced wavelengths that are matched to the internationally standardized telecommunication wavelengths (ITU-grid).
  • the desired wavelength is selected by re-injecting a small signal at the right wavelength into the laser (filtered feedback).
  • a compact active discretely tuneable filter Arrayed waveguide grating (AWG)
  • AWG Arrayed waveguide grating
  • the laser and the feedback filter may be integrated in a small chip ( ⁇ 1 mm ⁇ ) that can address a moderate number of wavelengths (8 or 16). This will provide a low-cost solution for large scale application in user access networks. For application in higher level networks more wavelengths are needed.
  • the number of wavelengths of the chip may in accordance with an embodiment be extended by including a tuneable Bragg reflector in the active filter, which enables to increase the total number of wavelengths with a factor of 2-4.
  • the invention provides a cheap stable integrated tunable laser, which allows the selective emission of a set of different optical wavelengths which are spaced according to the ITU grid specifications. This is an international standard for optical telecommunication frequencies.
  • a Distributed Bragg Reflector laser (DBR-Laser) is employed in combination with an Arrayed Waveguide Grating (AWG), integrated with a set of semiconductor optical amplifiers (see Figure 1 ).
  • DBR distributed Bragg reflector
  • DBR distributed Bragg reflector
  • DBR distributed Bragg reflector
  • the length of the laser cavity (approximately 500 ⁇ m) and the bandwidth of the distributed Bragg reflector (DBR) mirrors (approximately 200 nm) is such that the distributed Bragg reflector (DBR) laser can operate in at least 8 modes which are spaced at the ITU grid.
  • the channel spacing of the Arrayed waveguide grating (AWG) is designed in order to match the free spectral range of the distributed Bragg reflector (DBR) laser.
  • the FSR of the laser cavity does not necessarily have to be the same as the channel spacing of the Arrayed waveguide grating (AWG) (or any other filter realization). As long as the wavelengths in between the channels get suppressed more than the one that is passed through the filter the device will operate the same way. In this way, one can generate feedback at the ITU wavelengths produced by the laser. With this design, it is possible to selectively stabilize the device at the desired ITU wavelength via filtered optical feedback.
  • ABG Arrayed waveguide grating
  • Wavelength Division Multiplexing i.e. different wavelengths (or channels) are used to carry different messages or different parts of the same message and travel together in the same fiber.
  • FTTH Fiber-to-the-Home
  • FTTP Fiber-to-the-Premises
  • a very efficient use of available bandwidth would be a configuration of shared connections with packets of information being routed towards different users by wavelength-routing.
  • Tunable lasers provide a good solution as a single tunable device is capable to produce a large number of relevant wavelengths, thus reducing the inventory costs.
  • a single device which can be rapidly tuned to different ITU wavelengths would be extremely relevant for a cost effective realization of packet-switching access networks.
  • a successful tunable laser should score well in the following operational characteristics: output power, tunability i.e. the window of wavelengths that can be produced, switching-speed i.e. the minimum amount of time required to switch from operation in one channel to operation in another channel and wavelength-stability i.e. the device must operate only at the desired wavelength and operation in other channels should be suppressed.
  • the channel spacing is of the order of 0.5-1 nm (50 or 100 GHz), which means that a tunability of 10 nm allows approximately 10-15 channels.
  • the current design for tunable lasers is based on the idea of controlling a fully tunable device. Such a device is in principle capable to emit every possible wavelength in a certain window, and during operation, it requires to be stabilized to a well defined channel. However, this stabilization of the emission wavelength requires complicated (and expensive) control schemes.
  • the speed of the device should be sufficient to allow wavelength switching between each transmitted data packet. This is essential for application in Passive Optical Networks (PONs) in which the routing of the packets is done by sending the data with the right wavelength. Static wavelength filters are then sufficient to perform the routing. To add maximum flexibility to the network, packet switching is essential in every layer of the network.
  • PONs Passive Optical Networks
  • SE-noise spontaneous emission noise
  • Such noise consists in a random emission of photons in the laser cavity as a consequence of spontaneous recombination of carriers in the semiconductor material.
  • SE-Noise is responsible for mode-hopping i.e. the operation in one wavelength is suddenly suppressed, while the device starts emitting in a second undesired lasing mode. The resulting operation consists in alternate emission on different channels.
  • mode-hopping corresponds to the operation of the laser in an undesired channel and consequently a dramatic deterioration of the communication quality.
  • spontaneous emission noise is present in every kind of laser, it is clear that the wavelength-stability of devices which are designed to operate at all possible wavelengths in a window will be affected more heavily, thus making their control extremely intricate.
  • we introduce a new laser design which exploits the most modern results in filtered-optical feedback to simplify the stable operation of the laser in a set of communication-relevant wavelengths.
  • IFF-TL Integrated Filtered-Feedback Tunable Laser
  • the present invention focuses on a device which produces only a certain discrete set of wavelengths (for example matching the ITU grid specifications) and on the choice of filtered optical feedback (FOF) as control scheme.
  • a device operating only on a discrete set of wavelengths is intrinsically more stable compared to devices that can be continuously tuned.
  • Optical feedback supports the stabilization of laser devices. Part of the radiation emitted by the laser is re-injected in the system in such a way as to affect the semiconductor gain. Filtered feedback allows to independently address the gain of each wavelength, in practice offering the tool to suppress (by suppressing the gain) or enhance (by increasing the gain) the operation at certain wavelengths. This scheme is used in the present invention to select and stabilize the operation at a single relevant wavelength.
  • Figure 1 a schematic design for an 8-channel tunable device in accordance with the invention is shown. The same design principle can be applied to a different number of channels, but the 8-channel device is illustrated here as an example.
  • the device 1 consists of a first resonator section 3 comprising a relatively short distributed Bragg reflector (DBR)-Laser 8 (500 ⁇ m), coupled to a second resonator section 5 comprising a set of 8 independent cavities (11, 12, 13, 14, 15, 16, 17, 18) which contain short semiconductor optical amplifiers (SOAs), such as SOA 28, that can be independently biased.
  • the first resonator section 3 and the second resonator section 5 are operatively connected through tunable filter 4 which is composed of an Arrayed waveguide grating (AWG) (300 ⁇ m x 300 ⁇ m, in this embodiment).
  • AMG Arrayed waveguide grating
  • the wavelengths may correspond to one or more elements from a group comprising 1490.76nm, 1491.13nm, 1491.50nm, 1491.88nm, 1492.25nm, 1492.62nm, 1492.99nm, 1493.36nm, 1493.73nm, 1494.11nm, 1494.48nm, 1494.85nm, 1495.22nm, 1495.60nm, 1495.97nm, 1496.34nm, 1496.72nm, 1497.09nm, 1497.46nm, 1497.84nm, 1498.21nm, 1498.59nm, 1498.96nm, 1499.34nm, 1499.71nm, 1500.09nm, 1500.46nm, 1500.84nm, 1501.21nm, 1501.59nm, 1501.97nm, 1502.34nm, 1502.72nm, 1503.10nm, 1503.47nm, 1503.85n
  • the Arrayed waveguide grating (AWG) 9 is designed in order to route each of the 8 wavelengths into different cavities (11, ..., 18). In this way, each spectral component travels through a different SOA and can be independently manipulated. Finally, the filtered radiation is reflected back into the distributed Bragg reflector (DBR)-Laser cavity 8 by means of mirrors. The output radiation is collected at the output side 10 of the distributed Bragg reflector (DBR)-Laser 8.
  • DBR distributed Bragg reflector
  • the number of wavelengths addressable with the device must be extended.
  • One possibility to increase the number of wavelengths in the device consists in increasing the number of channels of the Arrayed waveguide grating (AWG). However, this solution will make the device much larger.
  • Another possibility of extending the number of wavelengths is shown in figure 4 .
  • the reflectors 31, 32, 33, 34, 35, 36, 37 and 38 at the end of the external cavities in the feedback section 5 consist of tunable gratings, such as Vertical Groove (VG) gratings or surface gratings (both known to the skilled person).
  • VG Vertical Groove
  • VG gratings are wavelength-dependent reflectors that can be tuned by injecting current into the grating section.
  • the idea is to design the Arrayed waveguide grating (AWG) 40 such that a set of wavelengths will end up in one of the external cavities, this is illustrated in the operating principle shown schematically in figure 5 .
  • the vertical groove grating is then designed in order to reflect only one selected feedback wavelength of these wavelengths back into the laser cavity (second filter in figure 5 ).
  • the Semiconductor optical amplifier (SOA) 41 in the external cavity still operates as an optical gate, but can also be used to compensate for possible differences in transmission loss of the Arrayed waveguide grating (AWG) 40 for the different wavelengths.
  • SOA Semiconductor optical amplifier
  • FIG. 6 Further examples of the device, not being part of the invention are illustrated in figure 6 and figure 7 .
  • the example in figure 6 comprises a feedback section 45 which is based on a tunable grating 46.
  • the grating reflectivity 50 shown above the tunable grating 46 in figure 6 reveals a number of secondary maxima 49 in reflectivity around a primary maximum 49, making the tunable grating 46 suitable for use in the feedback resonator section 45 of a device in accordance with the present invention.
  • First resonator section 3 is similar to the first resonator section in figure 1 .
  • the example shown in figure 7 not being part of the invention, makes use of a tunable sampled grating 55. This example has the additional benefit that maxima 56 in the grating reflectivity 58 are of a same magnitude. Therefore a Vernier effect can be used to cover a wide wavelength range.
  • FIG. 8 illustrates a multiwavelength laser 59 based on the concept of filtered feedback, not being part of the invention.
  • the laser 59 comprises a first or output resonator section 60, a tunable filter section 70, and a feedback section 80.
  • a number of FP-lasers comprised of mirror 61, semiconductor optical amplifiers 62, 64, 66, and 68, and distributed Bragg reflectors 63, 65, 67, and 69, are coupled to a single filter device 73 in the form of an arrayed waveguide grating (AWG) 73.
  • the Arrayed waveguide grating (AWG) 73 only passes one wavelength per laser through to a feedback mirror 83 in the feedback section 80, via optical paths 74, 75, 76 and 77 in the Arrayed waveguide grating (AWG) 73.
  • the filtered feedback light then locks each laser in the output section 60 to a different wavelength (A,, Aj, Aj, A4).
  • the output 85 of the laser 59 is located In the optical path behind feedback mirror 83 in this configuration.
  • the laser light therefore passes through the filter section 70 one extra time compared to the filtered feedback tunable laser shown in Figure 1 , where the output light comes directly from the FP-laser. This extra pass suppresses undesired side-modes and noise further.
  • the mirror 83 must be partially transparent and partially reflective in order to enable light to reach output 85.
  • Figure 9 discloses an another example, not being part of the invention, similar to the example of figure 8 , but different amongst others in the location of the output 85.
  • Output 85 is now coupled to a different output of the Arrayed waveguide grating (AWG) 73, and may be reached from each of the FP-lasers in the first or output resonator section 60, through optical paths 94, 95, 96, and 97.
  • feedback paths 74, 75, 76 and 77 of Arrayed waveguide grating (AWG) 73 only passes one wavelength per laser through to a feedback mirror 83 in the feedback section 80.
  • the output signal from the FP-lasers to output 85 is in Arrayed waveguide grating (AWG) 73 separated from the feedback signal from the FP-lasers to mirror 83.
  • Mirror 83 may therefore be fully reflective, adding on to the efficiency of the feedback section 80, while the configuration of figure 9 still benefits from the additional pass through filter section 70 for suppressing undesired side-modes and noise.
  • each of the FP-lasers in the output resonator section 60 comprises an optical modulator 88, 89, 90, and 91 between each of the SOA's 62, 64, 66, and 68 and the Arrayed waveguide grating (AWG) 73, for enabling wavelength dependent modulation of the output signal on output 85.
  • WAG Arrayed waveguide grating
  • These modulators are optional, as will be appreciated by the skilled person.
  • the mirror 61 of figure 8 has been replaced by further Bragg reflectors at each of the semiconductor optical amplifiers 62, 64, 66, and 68 in figure 9 .
  • figure 10 Another example, not being part, of the invention, is disclosed in figure 10 . It illustrates a combination of the embodiment of figures 1 and the example of Fig. 9 , combining the advantages of multiple feedback channels 100, 101, 102 and 103 with the advantages of multiwavelength lasers based on filtered feedback.
  • the output resonator section 60 is identical to the example of figure 9 , and is not further described here, except for the fact that each FP-laser cavity in the output resonator section 60 has been assigned a reference number, i.e. reference numbers 110, 111, 112 and 113 respectively.
  • the arrangement, in this example, has four outputs 84, 85, 86 and 87, all separated from the feedback section 80.
  • Optical paths from the FP-laser cavities 110 -113 to either the outputs 84-87 or the feedback section 80, through Arrayed waveguide grating (AWG) 73, are not illustrated in figure 10 for reasons of clarity of the figure.
  • Each output 84, 85, 86 and 87 may be coupled to one or more FP-laser cavity 110-113.
  • each cavity 110113 may comprise its own output, which may in that case be located at each cavity at the back-end thereof - which is the end furthest away from Arrayed waveguide grating (AWG) 73.
  • AWG Arrayed waveguide grating
  • Arrayed waveguide grating (AWG) 73 is arranged for mapping each wavelength of each FP-laser cavity 110, 111, 112 and 113 to a single feedback channel 100, 101, 102, and 103 in the feedback section 80 (this is to be said, although mapping of each wavelength of each cavity in the output section 60 takes place to a single channel in the feedback section 80, in an alternative example, it is also possible to map each wavelength of each cavity 110 - 113 to at least one channel 100-103, or to map multiple wavelengths of each cavity 110-113 to at least one channel in the feedback section 60).
  • each cavity 110-113 mapped to a same channel 100-103 are different for each cavity, for example: amplifiers 62, 64, 66, and 68, and distributed Bragg reflectors 63, 65, 67, and 69, are coupled to a single filter device 73 in the form of an arrayed waveguide grating (AWG) 73.
  • the Arrayed waveguide grating (AWG) 73 only passes one wavelength per laser through to a feedback mirror 83 in the feedback section 80, via optical paths 74, 75, 76 and 77 in the Arrayed waveguide grating (AWG) 73.
  • the filtered feedback light then locks each laser in the output section 60 to a different wavelength ( ⁇ 1 , ⁇ 2 , ⁇ 3 , ⁇ 4 ).
  • the output 85 of the laser 59 is located in the optical path behind feedback mirror 83 in this configuration.
  • the laser light therefore passes through the filter section 70 one extra time compared to the filtered feedback tunable laser shown in Figure 1 , where the output light comes directly from the FP-laser. This extra pass suppresses undesired side-modes and noise further.
  • the mirror 83 must be partially transparent and partially reflective in order to enable light to reach output 85.
  • Figure 9 discloses an improved embodiment, similar to the embodiment of figure 8 , but different amongst others in the location of the output 85.
  • Output 85 is now coupled to a different output of the Arrayed waveguide grating (AWG) 73, and may be reached from each of the FP-lasers in the first or output resonator section 60, through optical paths 94, 95, 96, and 97.
  • feedback paths 74, 75, 76 and 77 of Arrayed waveguide grating (AWG) 73 only passes one wavelength per laser through to a feedback mirror 83 in the feedback section 80.
  • the output signal from the FP-lasers to output 85 is in Arrayed waveguide grating (AWG) 73 separated from the feedback signal from the FP-lasers to mirror 83.
  • Mirror 83 may therefore be fully reflective, adding on to the efficiency of the feedback section 80, while the configuration of figure 9 still benefits from the additional pass through filter section 70 for suppressing undesired side-modes and noise.
  • each of the FP-lasers in the output resonator section 60 comprises an optical modulator 88, 89, 90, and 91 between each of the SOA's 62, 64, 66, and 68 and the Arrayed waveguide grating (AWG) 73, for enabling wavelength dependent modulation of the output signal on output 85.
  • WAG Arrayed waveguide grating
  • These modulators are optional, as will be appreciated by the skilled person.
  • the mirror 61 of figure 8 has been replaced by further Bragg reflectors at each of the semiconductor optical amplifiers 62, 64, 66, and 68 in figure 9 .
  • FIG 10 Another embodiment of the invention is disclosed in figure 10 . It illustrates a combination of the embodiments of figures 1 and 9 , combining the advantages of multiple feedback channels 100, 101, 102 and 103 with the advantages of multiwavelength lasers based on filtered feedback.
  • the output resonator section 60 is identical to the embodiment of figure 9 , and is not further described here, except for the fact that each FP-laser cavity in the output resonator section 60 has been assigned a reference number, i.e. reference numbers 110, 111, 112 and 113 respectively.
  • the arrangement, in this embodiment, has four outputs 84, 85, 86 and 87, all separated from the feedback section 80.
  • Optical paths from the FP-laser cavities 110 -113 to either the outputs 84-87 or the feedback section 80, through Arrayed waveguide grating (AWG) 73, are not illustrated in figure 10 for reasons of clarity of the figure.
  • Each output 84, 85, 86 and 87 may be coupled to one or more FP-laser cavity 110-113.
  • each cavity 110-113 may comprise its own output, which may in that case be located at each cavity at the back-end thereof - which is the end furthest away from Arrayed waveguide grating (AWG) 73.
  • AWG Arrayed waveguide grating
  • Arrayed waveguide grating (AWG) 73 is arranged for mapping each wavelength of each FP-laser cavity 110, 111, 112 and 113 to a single feedback channel 100, 101, 102, and 103 in the feedback section 80 (this is to be said, although mapping of each wavelength of each cavity in the output section 60 takes place to a single channel in the feedback section 80, in an alternative embodiment, it is also possible to map each wavelength of each cavity 110 - 113 to at least one channel 100-103, or to map multiple wavelengths of each cavity 110-113 to at least one channel in the feedback section 60). However, the wavelengths of each cavity 110-113 mapped to a same channel 100-103 are different for each cavity, for example:
  • channel 100 receives wavelength ⁇ 1 of cavity 110, wavelength ⁇ 2 of cavity 111, wavelength ⁇ 3 of cavity 112, and wavelength ⁇ 4 of cavity 113.
  • Channel 101 receives wavelength ⁇ 2 of cavity 110, wavelength ⁇ 3 of cavity 111, wavelength ⁇ 4 of cavity 112, and wavelength ⁇ 1 of cavity 113.
  • Channel 102 receives wavelength ⁇ 3 of cavity 110, wavelength ⁇ 4 of cavity 111, wavelength ⁇ 1 of cavity 112, and wavelength ⁇ 2 of cavity 113.
  • Channel 103 receives wavelength ⁇ 4 of cavity 110, wavelength ⁇ 1 of cavity 111, wavelength ⁇ 2 of cavity 112, and wavelength ⁇ 3 of cavity 113.
  • activating one of the feedback channels 100, 101, 102, 103 i.e. by activating a corresponding semiconductor optical amplifier, will lock each laser cavity 110, 111, 112, 113 in a different wavelength. This can be used for switching rapidly the wavelengths of all lasers by activating only a single gate in the feedback section 80.
  • each channel is ble to act as feedback channel for all its received wavelengths, i.e. ⁇ 1, ⁇ 2 , ⁇ 3 , and ⁇ 4 .
  • multiple laser cavities are coupled to multiple feedback channels, and the free spectral range (FSR) of the laser cavities 110-113 does not necessarily have to match the channel spacing on either side of Arrayed waveguide grating (AWG) 73.
  • FSR free spectral range
  • the filtered feedback tunable laser of the present invention may be fabricated in InP based technology.
  • InP based technology it is possible to integrate both active and passive waveguides on a single chip.
  • Active waveguides can provide optical amplification (used in the main laser cavity) and will absorb the light if no electrical current is provided (used in the feedback sections).
  • Passive waveguides will guide the light with minimal loss (used in the Arrayed waveguide grating (AWG) and the other device connections).
  • AMG Arrayed waveguide grating
  • the InP-based layer structure is grown by Metal-Organic Chemical Vapor Deposition (MOCVD) and the properties of the materials can be adjusted to the needs of the feedback based tunable laser.
  • MOCVD Metal-Organic Chemical Vapor Deposition
  • DBR distributed Bragg reflector
  • DBR gratings consist of a series of low-high refractive index transitions. Each transition causes a small reflection, but if the position of the transitions is chosen correctly, all reflections add up and a total reflection of more than 95% can be obtained.
  • the low-high index transitions can be realized in different ways. In conventional DFB and (S)SG-DBR lasers, the transitions may be created by etching a small surface corrugation at the bottom or the top of the waveguide layer. The reflection per transition is determined by the etch depth, but is usually low and therefore long mirrors are required.
  • the grating pattern can be defined by Electron Beam Lithography (EBL) or by Laser Interferometry Lithography (LIL), of which the latter is generally cheaper.
  • EBL Electron Beam Lithography
  • LIL Laser Interferometry Lithography
  • DBR distributed Bragg reflector
  • DBR distributed Bragg reflector
  • the distributed Bragg reflector (DBR) sections require a high quality etching process that provides waveguides with very smooth and very steep sidewalls.
  • an Inductively Coupled Plasma (ICP) process is very suitable. This may be achieved with a process that uses an e-beam defined pattern as a mask for an ICP etching step. Alternatively, it may be achieved by use of deep-UV wafer-stepper, which is more cost effective for production of large series.
  • ICP Inductively Coupled Plasma
  • Table 1 DWDM ITU-grid L-Band C-Band S-Band 100 GHz Grid 50 GHz Offset 100 GHz Grid 50 GHz Offset 100 GHz Grid 50 GHz Offset THz nm THz nm THz nm THz nm THz nm 186.00 1611.79 186.05 1611.35 191.00 1569.59 191.05 1569.18 196.00 1529.55 196.05 1529.16 186.10 1610.92 186.15 1610.49 191.10 1568.77 191.15 1568.36 196.10 1528.77 196.15 1528.38 186.20 1610.06 186.25 1609.62 191.20 1567.95 191.25 1567.54 196.20 1527.99 196.25 1527.60 186.30 1609.19 186.35 1608.76 191.30 1567.13 191.35 1566.72 196.30 1527.22 196.35 1526.83 186.25 1609.62

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Claims (11)

  1. Dispositif laser à semi-conducteur (1) comprenant une première section de résonateur (3) pour résonner un signal de résonateur optique afin de fournir un signal de sortie optique au niveau d'une sortie dudit dispositif laser (1), dans lequel ladite première section de résonateur (3) est agencée pour résonner sélectivement dans une pluralité de longueurs d'onde de sortie discrètes, et dans lequel ledit dispositif laser (1) comprend en outre une seconde section de résonateur (5) connectée de manière opérationnelle à ladite première section de résonateur (3), ladite seconde section de résonateur (5) étant agencée pour fournir un signal de rétroaction optique à une longueur d'onde de rétroaction vers ladite première section de résonateur (3) pour verrouiller ladite première section de résonateur (3) en résonance à une longueur d'onde de sortie sélectionnée parmi lesdites longueurs d'onde de sortie discrètes, laquelle longueur d'onde de sortie sélectionnée correspond à ladite longueur d'onde de rétroaction pour fournir ledit signal de sortie optique, dans lequel ladite seconde section de résonateur (5) est agencée pour fournir ledit signal de rétroaction optique sélectionnable à une pluralité d'ondes de rétroaction, dans lequel ladite seconde section de résonateur (5) comprend une pluralité de cavités (11-18), dans lequel chacune desdites cavités (11-18) est agencée pour résonner à une longueur d'onde de cavité correspondant à au moins une de ladite pluralité de longueurs d'onde de rétroaction, ledit dispositif laser à semi-conducteur (1) comprenant en outre des moyen pour sélectionner l'une de ladite pluralité de cavités (11-18) afin de fournir ledit signal de rétroaction optique; et
    un élément filtrant accordable (4, 40) pour établir ladite connexion opérationnelle entre ladite seconde section de résonateur (5) et ladite première section de résonateur (3), dans lequel ledit élément filtrant accordable (4, 40) est conçu pour transmettre sélectivement au moins l'un de lesdites longueurs d'onde de rétroaction.
  2. Dispositif laser à semi-conducteur (1) selon la revendication 1, dans lequel ladite seconde section de résonateur (5) comprend au moins une cavité accordable parmi lesdites cavités, laquelle cavité accordable est agencée pour résonner sélectivement à l'une d'une pluralité de longueurs d'onde de cavité discrètes, dans lequel chaque longueur d'onde de cavité de ladite pluralité de longueurs d'onde de cavité discrètes correspond à l'une desdites longueurs d'onde de rétroaction.
  3. Dispositif laser à semi-conducteur (1) selon la revendication 2, dans lequel ladite au moins une cavité accordable comprend une grille accordable (31-38, 46, 55) pour résonner sélectivement à l'une de ladite pluralité de longueurs d'onde de cavité discrètes.
  4. Dispositif laser à semi-conducteur (1) selon la revendication 3, dans lequel ladite grille accordable est une grille échantillonnée accordable (55) ou une grille à rainure verticale accordable (31-38, 46).
  5. Dispositif laser à semi-conducteur (1) selon la revendication 1, dans lequel ledit élément filtrant accordable (4, 40) comprend une grille de guide d'ondes en réseau.
  6. Dispositif laser à semi-conducteur (1) selon l'une quelconque des revendications précédentes, comprenant en outre des moyens pour commander une phase dudit signal de rétroaction optique.
  7. Dispositif laser à semi-conducteur (1) selon l'une quelconque des revendications précédentes,
    dans lequel ladite première section de résonateur (3) comprend une (8) ou plusieurs (62, 64, 66, 68, 110 à 113) cavités de sortie, dans lequel chacune desdites une ou plusieurs cavités de sortie est agencée pour résonner à une ou plusieurs de ladite pluralité de longueurs d'onde de sortie discrètes pour fournir ledit signal de sortie optique.
  8. Dispositif laser à semi-conducteur (1) selon la revendication 7, dans lequel ladite première section de résonateur (3) comprend une cavité de sortie unique (8) agencée pour résonner à la totalité de ladite pluralité de longueurs d'onde de sortie discrètes pour fournir ledit signal de sortie optique, ou dans lequel ladite première section de résonateur (3) comprend de multiples cavités de sortie (62, 64, 66, 68, 110-113), dans lequel chaque cavité de sortie desdites multiples cavités de sortie est agencée pour résonner à une ou plusieurs de ladite pluralité de longueurs d'onde de sortie discrètes pour fournir ledit signal de sortie optique.
  9. Dispositif laser à semi-conducteur (1) selon l'une quelconque des revendications précédentes,
    dans lequel lesdites longueurs d'onde de sortie discrètes sont comprises dans une plage allant de 1400 nm à 1700 nm.
  10. Dispositif laser à semi-conducteur (1) selon la revendication 9, dans lequel lesdites longueurs d'onde de sortie discrètes correspondent à des longueurs d'onde définies dans des longueurs d'onde de multiplexage par répartition en longueur d'onde dense, DWDM, union de télécommunication internationale, ITU, spécification de grille, ITU-grid.
  11. Dispositif laser à semi-conducteur (1) selon l'une quelconque des revendications précédentes, dans lequel ladite première section de résonateur (3) comprend un résonateur de Fabry-Perot, ou dans lequel ladite première section de résonateur (3) comprend des miroirs de réflexion de Bragg (63, 65, 67, 69) pour résonner à ladite pluralité de longueurs d'onde de sortie discrètes.
EP08779009.3A 2007-08-02 2008-08-01 Dispositif de laser à semi-conducteur Active EP2174392B1 (fr)

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US8571084B2 (en) 2013-10-29
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