EP2174392B1 - Dispositif de laser à semi-conducteur - Google Patents

Dispositif de laser à semi-conducteur Download PDF

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Publication number
EP2174392B1
EP2174392B1 EP08779009.3A EP08779009A EP2174392B1 EP 2174392 B1 EP2174392 B1 EP 2174392B1 EP 08779009 A EP08779009 A EP 08779009A EP 2174392 B1 EP2174392 B1 EP 2174392B1
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EP
European Patent Office
Prior art keywords
wavelengths
cavity
output
wavelength
optical
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EP08779009.3A
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German (de)
English (en)
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EP2174392A1 (fr
Inventor
Boudewijn Docter
Stefano Beri
Meint Koert Smit
Fouad Karouta
Xaverius Jacques Maria Leijtens
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Effect Photonics BV
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Effect Photonics BV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0268—Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0656—Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1212—Chirped grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Claims (11)

  1. Dispositif laser à semi-conducteur (1) comprenant une première section de résonateur (3) pour résonner un signal de résonateur optique afin de fournir un signal de sortie optique au niveau d'une sortie dudit dispositif laser (1), dans lequel ladite première section de résonateur (3) est agencée pour résonner sélectivement dans une pluralité de longueurs d'onde de sortie discrètes, et dans lequel ledit dispositif laser (1) comprend en outre une seconde section de résonateur (5) connectée de manière opérationnelle à ladite première section de résonateur (3), ladite seconde section de résonateur (5) étant agencée pour fournir un signal de rétroaction optique à une longueur d'onde de rétroaction vers ladite première section de résonateur (3) pour verrouiller ladite première section de résonateur (3) en résonance à une longueur d'onde de sortie sélectionnée parmi lesdites longueurs d'onde de sortie discrètes, laquelle longueur d'onde de sortie sélectionnée correspond à ladite longueur d'onde de rétroaction pour fournir ledit signal de sortie optique, dans lequel ladite seconde section de résonateur (5) est agencée pour fournir ledit signal de rétroaction optique sélectionnable à une pluralité d'ondes de rétroaction, dans lequel ladite seconde section de résonateur (5) comprend une pluralité de cavités (11-18), dans lequel chacune desdites cavités (11-18) est agencée pour résonner à une longueur d'onde de cavité correspondant à au moins une de ladite pluralité de longueurs d'onde de rétroaction, ledit dispositif laser à semi-conducteur (1) comprenant en outre des moyen pour sélectionner l'une de ladite pluralité de cavités (11-18) afin de fournir ledit signal de rétroaction optique; et
    un élément filtrant accordable (4, 40) pour établir ladite connexion opérationnelle entre ladite seconde section de résonateur (5) et ladite première section de résonateur (3), dans lequel ledit élément filtrant accordable (4, 40) est conçu pour transmettre sélectivement au moins l'un de lesdites longueurs d'onde de rétroaction.
  2. Dispositif laser à semi-conducteur (1) selon la revendication 1, dans lequel ladite seconde section de résonateur (5) comprend au moins une cavité accordable parmi lesdites cavités, laquelle cavité accordable est agencée pour résonner sélectivement à l'une d'une pluralité de longueurs d'onde de cavité discrètes, dans lequel chaque longueur d'onde de cavité de ladite pluralité de longueurs d'onde de cavité discrètes correspond à l'une desdites longueurs d'onde de rétroaction.
  3. Dispositif laser à semi-conducteur (1) selon la revendication 2, dans lequel ladite au moins une cavité accordable comprend une grille accordable (31-38, 46, 55) pour résonner sélectivement à l'une de ladite pluralité de longueurs d'onde de cavité discrètes.
  4. Dispositif laser à semi-conducteur (1) selon la revendication 3, dans lequel ladite grille accordable est une grille échantillonnée accordable (55) ou une grille à rainure verticale accordable (31-38, 46).
  5. Dispositif laser à semi-conducteur (1) selon la revendication 1, dans lequel ledit élément filtrant accordable (4, 40) comprend une grille de guide d'ondes en réseau.
  6. Dispositif laser à semi-conducteur (1) selon l'une quelconque des revendications précédentes, comprenant en outre des moyens pour commander une phase dudit signal de rétroaction optique.
  7. Dispositif laser à semi-conducteur (1) selon l'une quelconque des revendications précédentes,
    dans lequel ladite première section de résonateur (3) comprend une (8) ou plusieurs (62, 64, 66, 68, 110 à 113) cavités de sortie, dans lequel chacune desdites une ou plusieurs cavités de sortie est agencée pour résonner à une ou plusieurs de ladite pluralité de longueurs d'onde de sortie discrètes pour fournir ledit signal de sortie optique.
  8. Dispositif laser à semi-conducteur (1) selon la revendication 7, dans lequel ladite première section de résonateur (3) comprend une cavité de sortie unique (8) agencée pour résonner à la totalité de ladite pluralité de longueurs d'onde de sortie discrètes pour fournir ledit signal de sortie optique, ou dans lequel ladite première section de résonateur (3) comprend de multiples cavités de sortie (62, 64, 66, 68, 110-113), dans lequel chaque cavité de sortie desdites multiples cavités de sortie est agencée pour résonner à une ou plusieurs de ladite pluralité de longueurs d'onde de sortie discrètes pour fournir ledit signal de sortie optique.
  9. Dispositif laser à semi-conducteur (1) selon l'une quelconque des revendications précédentes,
    dans lequel lesdites longueurs d'onde de sortie discrètes sont comprises dans une plage allant de 1400 nm à 1700 nm.
  10. Dispositif laser à semi-conducteur (1) selon la revendication 9, dans lequel lesdites longueurs d'onde de sortie discrètes correspondent à des longueurs d'onde définies dans des longueurs d'onde de multiplexage par répartition en longueur d'onde dense, DWDM, union de télécommunication internationale, ITU, spécification de grille, ITU-grid.
  11. Dispositif laser à semi-conducteur (1) selon l'une quelconque des revendications précédentes, dans lequel ladite première section de résonateur (3) comprend un résonateur de Fabry-Perot, ou dans lequel ladite première section de résonateur (3) comprend des miroirs de réflexion de Bragg (63, 65, 67, 69) pour résonner à ladite pluralité de longueurs d'onde de sortie discrètes.
EP08779009.3A 2007-08-02 2008-08-01 Dispositif de laser à semi-conducteur Active EP2174392B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US96299007P 2007-08-02 2007-08-02
PCT/NL2008/000185 WO2009017398A1 (fr) 2007-08-02 2008-08-01 Dispositif de laser à semi-conducteur

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EP2174392A1 EP2174392A1 (fr) 2010-04-14
EP2174392B1 true EP2174392B1 (fr) 2020-04-29

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US (1) US8571084B2 (fr)
EP (1) EP2174392B1 (fr)
WO (1) WO2009017398A1 (fr)

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Also Published As

Publication number Publication date
EP2174392A1 (fr) 2010-04-14
US8571084B2 (en) 2013-10-29
WO2009017398A1 (fr) 2009-02-05
US20110216789A1 (en) 2011-09-08

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