EP2135254A4 - Belastbare magnetoresistive fälschungserkennungsvorrichtungen - Google Patents

Belastbare magnetoresistive fälschungserkennungsvorrichtungen

Info

Publication number
EP2135254A4
EP2135254A4 EP08742038A EP08742038A EP2135254A4 EP 2135254 A4 EP2135254 A4 EP 2135254A4 EP 08742038 A EP08742038 A EP 08742038A EP 08742038 A EP08742038 A EP 08742038A EP 2135254 A4 EP2135254 A4 EP 2135254A4
Authority
EP
European Patent Office
Prior art keywords
magnetoresistive
stressed
detection devices
tamper detection
tamper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP08742038A
Other languages
English (en)
French (fr)
Other versions
EP2135254A1 (de
EP2135254B1 (de
Inventor
James G Deak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NVE Corp
Original Assignee
NVE Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NVE Corp filed Critical NVE Corp
Publication of EP2135254A1 publication Critical patent/EP2135254A1/de
Publication of EP2135254A4 publication Critical patent/EP2135254A4/de
Application granted granted Critical
Publication of EP2135254B1 publication Critical patent/EP2135254B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1695—Protection circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
EP08742038.6A 2007-03-09 2008-03-10 Belastbare magnetoresistive fälschungserkennungsvorrichtungen Active EP2135254B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US90615207P 2007-03-09 2007-03-09
PCT/US2008/003142 WO2008112187A1 (en) 2007-03-09 2008-03-10 Stressed magnetoresistive tamper detection devices

Publications (3)

Publication Number Publication Date
EP2135254A1 EP2135254A1 (de) 2009-12-23
EP2135254A4 true EP2135254A4 (de) 2011-05-04
EP2135254B1 EP2135254B1 (de) 2016-05-25

Family

ID=39759825

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08742038.6A Active EP2135254B1 (de) 2007-03-09 2008-03-10 Belastbare magnetoresistive fälschungserkennungsvorrichtungen

Country Status (3)

Country Link
US (2) US8294577B2 (de)
EP (1) EP2135254B1 (de)
WO (1) WO2008112187A1 (de)

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EP2300953B1 (de) * 2008-06-13 2013-01-23 Nxp B.V. Eindringschutz unter verwendung von belastungsänderungen
US20120198242A1 (en) * 2011-01-31 2012-08-02 Honeywell International Inc. Data protection when a monitor device fails or is attacked
US8957487B2 (en) * 2012-01-04 2015-02-17 Industrial Technology Research Institute Tunneling magneto-resistor reference unit and magnetic field sensing circuit using the same
US8854870B2 (en) 2012-03-13 2014-10-07 Honeywell International Inc. Magnetoresistive random access memory (MRAM) die including an integrated magnetic security structure
US8811072B2 (en) * 2012-03-13 2014-08-19 Honeywell International Inc. Magnetoresistive random access memory (MRAM) package including a multilayer magnetic security structure
CN102809665B (zh) * 2012-06-04 2016-08-03 江苏多维科技有限公司 一种磁电阻齿轮传感器
JP5571142B2 (ja) * 2012-09-25 2014-08-13 株式会社東芝 磁気メモリ
WO2014124271A1 (en) 2013-02-08 2014-08-14 Everspin Technologies, Inc. Tamper detection and response in a memory device
US9218509B2 (en) 2013-02-08 2015-12-22 Everspin Technologies, Inc. Response to tamper detection in a memory device
US9607462B2 (en) * 2013-03-18 2017-03-28 Kenneth Gerald Blemel System for anti-tamper parcel packaging, shipment, receipt, and storage
DE102013210298A1 (de) * 2013-06-04 2014-12-04 Robert Bosch Gmbh Anordnung zur Ermittlung von Kenngrößen eines elektrochemischen Energiespeichers
US9747967B2 (en) * 2014-09-26 2017-08-29 Intel Corporation Magnetic field-assisted memory operation
JP6697144B2 (ja) * 2016-01-27 2020-05-20 アルプスアルパイン株式会社 磁気センサ
US10395078B1 (en) * 2017-02-23 2019-08-27 International Business Machines Corporation Digital fingerprint generation using sensor embedded packaging elements
US10338007B2 (en) 2017-02-23 2019-07-02 International Business Machines Corporation System and method for detecting package tampering
US10147289B2 (en) 2017-04-05 2018-12-04 Ut-Battelle, Llc Magnetic field sensing for tamper-indicating devices
US10763431B2 (en) 2018-11-16 2020-09-01 International Business Machines Corporation Film stress control for memory device stack
US10825984B1 (en) 2019-08-21 2020-11-03 Globalfoundries Singapore Pte. Ltd. Sensors including dummy elements arranged about a sensing element
US11199594B2 (en) * 2019-08-27 2021-12-14 Western Digital Technologies, Inc. TMR sensor with magnetic tunnel junctions with a free layer having an intrinsic anisotropy

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US20030048676A1 (en) * 2001-08-31 2003-03-13 Nve Corporation Antiparallel magnetoresistive memory cells
US20050122217A1 (en) * 2002-07-31 2005-06-09 Seal Brian K. Magnetic field sensing for tamper identification

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GB2071333B (en) 1980-02-22 1984-02-01 Sony Corp Magnetic sensor device
US5117457A (en) 1986-11-05 1992-05-26 International Business Machines Corp. Tamper resistant packaging for information protection in electronic circuitry
US4860351A (en) 1986-11-05 1989-08-22 Ibm Corporation Tamper-resistant packaging for protection of information stored in electronic circuitry
US5027397A (en) 1989-09-12 1991-06-25 International Business Machines Corporation Data protection by detection of intrusion into electronic assemblies
US5233505A (en) 1991-12-30 1993-08-03 Yeng-Ming Chang Security device for protecting electronically-stored data
US5602381A (en) 1993-05-19 1997-02-11 Nhk Spring Co., Ltd. Objects to be checked for authenticity, and method and apparatus for checking whether or not objects are authentic
US5650958A (en) * 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
US5675319A (en) 1996-04-26 1997-10-07 David Sarnoff Research Center, Inc. Tamper detection device
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JP3440763B2 (ja) 1996-10-25 2003-08-25 富士ゼロックス株式会社 暗号化装置、復号装置、機密データ処理装置、及び情報処理装置
US6547364B2 (en) 1997-07-12 2003-04-15 Silverbrook Research Pty Ltd Printing cartridge with an integrated circuit device
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US6784796B2 (en) 1999-12-17 2004-08-31 The Regents Of The University Of Califronia Magnetic vector field tag and seal
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US6310549B1 (en) 2000-08-29 2001-10-30 Digitech International Wireless security system
US6891474B1 (en) 2001-08-01 2005-05-10 Tagsense, Inc. Electromagnetic identification label for anti-counterfeiting, authentication, and tamper-protection
JP2003331241A (ja) 2002-05-09 2003-11-21 Fujitsu Ltd メモリデバイス及びその制御方法
US6778083B2 (en) 2002-08-27 2004-08-17 Hi-G-Tek Ltd. Electronic locking seal
US6753775B2 (en) 2002-08-27 2004-06-22 Hi-G-Tek Ltd. Smart container monitoring system
US7712147B2 (en) 2002-12-18 2010-05-04 Nxp B.V. Method and device for protection of an mram device against tampering
US7224634B2 (en) 2002-12-18 2007-05-29 Nxp B.V. Hardware security device for magnetic memory cells
AU2003292453A1 (en) 2002-12-18 2004-07-09 Koninklijke Philips Electronics N.V. Tamper-resisting packaging
GB2397272B (en) 2003-01-15 2006-11-15 Hewlett Packard Co Secure physical documents and methods and apparatus for publishing and reading them
ATE421145T1 (de) * 2003-09-02 2009-01-15 Nxp Bv Aktive abschirmung für eine schaltung mit magnetisch empfindlichen materialien
US7017807B2 (en) 2003-09-08 2006-03-28 Francis M. Claessens Apparatus and method for detecting tampering with containers and preventing counterfeiting thereof
EP1617472A1 (de) 2004-07-16 2006-01-18 Axalto SA Eine aktive Schutzanordnung zum Schutz einer Schaltung gegenüber mechanischem- und elektromagnetischem Angriff
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US20030048676A1 (en) * 2001-08-31 2003-03-13 Nve Corporation Antiparallel magnetoresistive memory cells
US20050122217A1 (en) * 2002-07-31 2005-06-09 Seal Brian K. Magnetic field sensing for tamper identification

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2008112187A1 *

Also Published As

Publication number Publication date
WO2008112187A1 (en) 2008-09-18
EP2135254A1 (de) 2009-12-23
US20080247098A1 (en) 2008-10-09
EP2135254B1 (de) 2016-05-25
US20130057265A1 (en) 2013-03-07
US8294577B2 (en) 2012-10-23
US9030200B2 (en) 2015-05-12

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