EP2102950A1 - Lasers a saillie a facette gravee dotes d'arret de gravure - Google Patents
Lasers a saillie a facette gravee dotes d'arret de gravureInfo
- Publication number
- EP2102950A1 EP2102950A1 EP06848109A EP06848109A EP2102950A1 EP 2102950 A1 EP2102950 A1 EP 2102950A1 EP 06848109 A EP06848109 A EP 06848109A EP 06848109 A EP06848109 A EP 06848109A EP 2102950 A1 EP2102950 A1 EP 2102950A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- ridge
- etched
- laser
- facet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000001312 dry etching Methods 0.000 claims abstract description 6
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 5
- 238000001039 wet etching Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 52
- 230000008569 process Effects 0.000 claims description 47
- 238000005253 cladding Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 35
- 239000011241 protective layer Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000001459 lithography Methods 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0203—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
- H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
Definitions
- the present invention relates, in general, to etched-facet photonic devices, and more particularly to improved etched-facet ridge laser devices of the type disclosed in copending US Application No. 11/356,203, filed on February 17, 2006 and entitled "High Reliability Etched Facet Photonic Devices" (Attorney's Docket BIN 20) and assigned to the assignee of the present application, and to a process for fabricating such devices.
- Semiconductor lasers typically are fabricated on a wafer by growing an appropriate layered semiconductor material on a substrate through Metalorganic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE) to form an epitaxy structure having an active layer parallel to the substrate surface.
- MOCVD Metalorganic Chemical Vapor Deposition
- MBE Molecular Beam Epitaxy
- the wafer is then processed with a variety of semiconductor processing tools to produce a laser optical cavity incorporating the active layer and incorporating metallic contacts attached to the semiconductor material.
- Laser mirror facets typically are formed at the ends of the laser cavity by cleaving the semiconductor material along its crystalline structure to define edges, or ends, of the laser optical cavity so that when a bias voltage is applied across the contacts, the resulting current flow through the active layer causes photons to be emitted out of the faceted edges of the active layer in a direction perpendicular to the current flow.
- the foregoing cleaving process is imprecise, for it relies on the location and angle of the crystalline planes of the semiconductor material. With some materials, for example, there may be cleave planes of approximately equal strength that are oriented at such acute angles to one another that minute perturbations occurring during cleaving can redirect a fracture interface from one cleave plane to another.
- 4,851,368, for example also allows lasers to be monolithically integrated with other photonic devices on the same substrate.
- the process described in this patent was extended to provide a process for fabricating ridge lasers having etched facets, as disclosed in "Monolithic AIGaAs-GaAs Single Quantum-Well Ridge Lasers Fabricated with Dry-Etched Facets and Ridges", A. Behfar-Rad and S.S. Wong, IEEE Journal of Quantum Electronics, volume 28, No. 5, pages 1227-1231, May 1992., and further described in the above-mentioned U.S. Patent Application No. 11/356,203.
- a ridge laser having etched facets is formed in an epitaxial structure that incorporates a wet etch stop layer at the location where the base of the ridge is to be located.
- the ridge is partially formed using a prior art lithography and dry etch process, but the dry etch is stopped short of the ridge base. Lithography defines a wet etch window that overlaps the partially etched ridge while keeping its end sections and its end facets protected by a resist layer.
- the structure is wet-etched to complete the formation of the ridge and to remove residual material from above the etch stop layer.
- the stop layer in the epitaxial structure precisely and reliably stops the wet etch at the depth desired for the base of the ridge structure, increasing the yield of the fabrication process to about 98-99.8%.
- a substrate, or wafer is formed, for example from a type Hl-V type compound or an alloy thereof, which may be suitably doped.
- a succession of layers is deposited on a top surface of the substrate, as by an epitaxial deposition process such as Metalorganic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE).
- MOCVD Metalorganic Chemical Vapor Deposition
- MBE Molecular Beam Epitaxy
- These layers which form an optical waveguide in the transverse direction, typically include an active region which may be formed with AllnGaAs-based quantum wells and barriers and adjacent upper and lower cladding regions.
- the semiconductor laser photonic device structure layers may be epitaxially formed on an InP substrate, with the upper and lower cladding regions being formed from a semiconductor material such as InP which has a lower index than the index of the active region.
- An InGaAs cap layer is provided on the top surface of the upper cladding layer to allow ohmic contacts.
- a wet etch stop layer is epitaxially deposited on the substrate at the level of the base of the ridge that is to be formed in the structure.
- a stop layer of Gallium Indium Arsenide Phosphide (GaInAsP) is deposited in the cap layer, just above the upper cladding layer.
- This stop layer is about 20nm thick, and is lattice matched with the InP cladding layer.
- the resulting wafer is processed using standard photolithography and chemically assisted ion beam etching (CAIBE) dry etching steps to form one or more laser cavities and facets. Thereafter, a second photolithography step is used to define one or more ridges on the previously formed cavities, and CAfBE is used to etch the ridges. Since the CAIBE process is hard to control with precision, and thus
- CAIBE chemically assisted ion beam etching
- V is not very accurate, this dry etch step is designed to be incomplete; i.e., it is designed to end short of the desired depth of the ridge and before it reaches the stop layer.
- another photolithography step is performed to cover the end sections of the ridge and the facets with a protective resist layer and a wet etch step, using a selective wet etchant, is performed.
- the selective wet etchant for example a mixture of HCI and H 3 PO 4 , removes the residual upper cladding material and stops on or etches only very slowly, the etch stop layer.
- the wet etch completes the ridge formation and stops at the stop layer.
- Figure 1 illustrates a prior art cleaved facet process for fabricating multiple photonic devices such as lasers on a wafer
- Figure 2 illustrates a prior art etched facet process for fabricating multiple photonic devices such as lasers on a wafer
- Figure 3 illustrates in perspective partial view multiple prior art etched facet lasers on a wafer
- Figure 4 illustrates in cross-section the succession of layers forming a wafer in accordance with the present invention
- Figure 5 illustrates in perspective view an etched facet ridge laser with an etch stop, before the application of electrical contacts, fabricated in accordance with the invention.
- Figures 6 (a and b) through 12 (a and b) illustrate in x and y-direction cross-sectional views the fabrication steps for making an etched facet ridge laser with an etch stop using the wafer of Figure 4, in accordance with the present invention.
- mechanical cleaving of a semiconductor epi wafer 12 is the usual process for defining reflective mirrors, or facets, at the cavity ends of edge-emitting diode lasers, fabricated on the wafer.
- multiple waveguides 14 are fabricated on the wafer substrate, a metal contact layer is applied, and the wafer is mechanically cleaved, as along cleave lines 16, to form bars 18 of laser devices 20.
- the bars 18 are then stacked, as illustrated at 22, and the cleaved end facets of the laser devices are coated to provide the desired reflection and emission characteristics.
- the individual laser devices 20 may then be tested, as at 24, by applying a bias voltage 26 across the individual lasers and detecting the resulting output light beam 28.
- the bars of laser devices may then be separated, or singulated, as at 30, to produce individual chips 32 each containing one or more laser devices that may be suitably packaged, in known manner, as at 34.
- the foregoing cleaving process is imprecise, for it relies on the location and angle of the crystalline planes of the semiconductor material to locate the laser facets on the waveguides.
- the cleaving process illustrated in Fig. 1 creates fragile bars 18 that are awkward to handle during mirror coating and testing.
- FIG.2 An alternative technology for fabricating lasers is generally illustrated at 40 in Fig.2, wherein, as a first step, multiple waveguides 42 are fabricated on a suitable wafer substrate 44. Preferably, these are parallel waveguides that extend across the wafer, as illustrated. A process based on photolithography and chemically assisted ion-beam etching (CAIBE) is then used to form facets at desired locations along the waveguides to produce individual laser waveguide cavities.
- CAIBE chemically assisted ion-beam etching
- facets are precisely located, without regard to the crystalline structure of the material, and have a quality and reflectivity that is equivalent to those obtained by cleaving. Since the laser cavities and facets are fabricated on the wafer much the same way that integrated circuits are fabricated on silicon, this process allows the lasers to be monolithically integrated with other photonic devices on a single chip, and allows the devices to be tested inexpensively while still on the wafer, as illustrated at 46. Thereafter, the wafer may be si ⁇ gulated, as at 48, to separate the chips 50, and the chips may then be packaged, as illustrated at 52.
- This process has a relatively high yield and low cost, as compared to the above-described cleaving process, and allows the manufacture of lasers having cavities of various forms independently of the cleaving planes in the wafer material.
- the prior art fabrication process of Fig. 2 is described in greater detail in the above-referenced article in the IEEE Journal of Quantum Electronics.
- a third lithography provides contact holes
- a fourth lithography provides a pattern for p-contact metallization.
- the resulting edge-emitting ridge laser structures are illustrated in Fig. 3, wherein ridges 60 and 62 are formed on respective laser waveguides 42, and wherein each laser cavity, such as cavity 72, for example, is fabricated with etched end facets 74 and 76.
- the etched facet ridge laser devices produced by the foregoing procedure can have a lower than desired yield and can produce wide variations in the threshold current for establishing lasing and low single lateral mode yields. It has been found that the cause of these problems lies in variations that occur in the heights of the laser ridges during the fabrication process. The depth of each ridge etch and the consequent location of the base of the ridge with respect to the active region in the laser structure must be precise if consistent results are to be obtained in the fabrication process. However, it has been found that controlling the dry etch process sufficiently to produce consistent ridge etch depths is very difficult. [0021] The foregoing problem is overcome by the present invention, as illustrated diagrammatically in Figs.
- the wafer 98 includes a substrate 102 that is formed, for example, of a type Hl-V type compound, or an alloy thereof, which may be suitably doped.
- a succession of layers 106 may be deposited on a top surface 108 of the substrate 102, as by an epitaxial deposition such as Metalorganic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE).
- MOCVD Metalorganic Chemical Vapor Deposition
- MBE Molecular Beam Epitaxy
- the semiconductor laser, or other photonic device, structure layers 106 are epitaxially formed on an InP substrate 102.
- the upper and lower cladding regions 114 and 116, respectively, of the photonic structure are formed from a semiconductor material such as InP which has a lower index than the index of the active region 112. These cladding regions are adjacent the active region, which may be formed with AllnGaAs-based quantum wells and barriers.
- An InGaAs cap layer 118 is provided on top of the upper cladding layer 114 to allow ohmic contacts.
- a wet etch stop layer 119 that is located at the level where the base 120 of the ridge is to be located upon completion of the fabrication process, as illustrated in Fig. 5.
- the stop layer 119 is an epitaxially deposited layer of GaInAsP that is approximately 20nm thick and divides the upper cladding layer 114 into bottom and top segments 114(a) and 114(b). Stop layer 119 is spaced close to, but above, the bottom surface 121 of the upper cladding layer , 114 which surface is at the same time the top surface of the active region 112.
- a masking layer 122 such as a 200 nm thick layer of SiO 2 , is deposited on the epitaxially grown laser structure 106 by plasma-enhanced chemical vapor deposition (PECVD), as illustrated in Fig. 4.
- PECVD plasma-enhanced chemical vapor deposition
- RIE reactive ion etching
- the photolithography steps of spinning a photoresist layer onto the mask layer 122, exposing the photoresist through a lithographic mask to produce a pattern, and thereafter transferring the pattern to the mask layer 122 are not illustrated, since they are conventional and well-known in the art.
- the SiO 2 pattern in layer 122 is transferred to the laser structure using chemically assisted ion beam etching (CAIBE) 1 to form the bodies 123, illustrated in Figs. 6 (a) and 6(b), of photonic devices such as the laser waveguides generally illustrated at 42 in Fig. 3, and to form along those waveguides multiple, discrete laser cavities from which lasers such as that illustrated at 100 in Fig.5 can be formed.
- CAIBE chemically assisted ion beam etching
- the body 123 is formed with etched side walls 124 and 125 and etched end facets 126 and 128, as illustrated in Figs. 6(a) and 6(b).
- Fig. 6(a) is a cross-section taken in the direction of the arrows at the x-x axis of the waveguide 100 of Fig. 5, while Fig. 6(b) is a cross-section of the waveguide taken in the direction of the arrows at the y-y axis of Fig. 5.
- ⁇ As illustrated in Figs.
- a second photoresist lithography to produce a pattern defining one or more ridges such as ridge 104 on the previously defined laser bodies 123 on the wafer is performed, and RIE is used to transfer the photoresist pattern to the PECVD SiO 2 mask layer 122.
- CAIBE is used to form the ridges 104 for each laser body 123 in the laser structure as illustrated.
- this ridge CAIBE dry etch step is designed to stop short of the etch depth needed to complete the ridge 104, in order to ensure that the etch does not unintentionally continue beyond the desired depth of the ridge base 120.
- this etch process is designed to end at an etch floor 130 in cladding layer 114(b) which is always at or above the top surface 132 of the layer 119. This prevents the CAIBE etch from extending below the desired level of the base 120 of the ridge 104, illustrated in Fig. 5.
- the top surface of the device is covered with a masking layer 136 of photoresist that is then patterned photolithographically to expose, after development, a wet etch window 137 that includes the ridge 104 as well as regions 138 and 139 on each side of and along the length of the ridge 104.
- the photoresist masking layer 136 extends over the ends 140 and 142 of the ridge and over the end facets 126 and 128 to protect them from the following wet etch, and preferably also overlaps the outer edges 144 and 146 of the etch floor 130 by a small amount to accommodate lateral etching "by the wet etch step.
- the wet etch window 137 is exposed to a selective wet etchant, for example a mixture of HCI and H 3 PO 4 , to remove the residual upper cladding material above layer 119.
- a selective wet etchant for example a mixture of HCI and H 3 PO 4 .
- the wet etch stops or effectively stops at the top surface 132 of the stop layer 119, which is the desired location of the base 120 of the ridge, and leaves the ridge at its desired height, and oxygen plasma is then used to remove the photoresist mask 136, as illustrated in Figs. 9(a) and 9(b). Any roughness or grass- like features that may be present are eliminated by the wet etch process, allowing precise depth control.
- a single laser cavity with a single ridge 104 is illustrated in Figs. 5-12 (a) and (b), it will be understood that multiple photonic devices preferably are fabricated on a single wafer.
- multiple spaced- apart waveguides 42 each of which may incorporate a number of ridge lasers, usually are fabricated on a single wafer, and after completion of the remaining process steps described below, they are separated for packaging by singulation, or dicing, as discussed above, to produce individual photonic devices.
- singulation, or dicing as discussed above, to produce individual photonic devices.
- a 120 nm thick passivation layer 150 of a dielectric material such as Si ⁇ 2 is deposited, using PECVD, to cover the entire wafer, including the photonic devices, as illustrated in Figs. 10(a) and 10(b) for a single ridge 104.
- a third lithography for defining a p-contact opening in a photoresist mask layer on the photonic structure is performed and RIE through the mask is used to open a contact window 152 in the Si ⁇ 2 layers 150 and 122. Oxygen plasma is then used to remove the photoresist.
- a fourth lithography is performed to define a metallization lift-off pattern for a p-contact, in a photoresist mask layer, wherein the lift-off structure 154 is lithographically defined to produce a contact opening 156 surrounding the contact window 152.
- the under-cut that a typical lift-off structure possesses has not been shown explicitly in the metallization lift-off pattern 154, but it will be understood that this is present.
- a p-contact metal 160 (Figs. 12(a) and 12(b)) is then evaporated onto the metallization lift-off pattern 154 and through the opening 156 to cover the contact window 152, using an e-beam evaporator.
- the unwanted metallization is removed via a lift-off step that removes the metallization lift-off pattern 154, leaving the p-contact 160 for the device.
- the p-contact extends beyond the edges of the contact window 152 and seals the contact opening in the Si ⁇ 2 layers 122 and 150, as is illustrated.
- An n-contact 162 for the laser is also evaporated using e-beam evaporation on the back side of the wafer.
- the n-contact can also be applied to the front side of the wafer using another metallization lift-off step.
- multiple photonic devices are typically fabricated on the substrate.
- a remaining feature such as a wall or shoulder 163 is formed on the top surface of the wet etch stop layer, under the mask 136 where the mask extends over the edges 144 and 146.
- This wall causes a change in the ridge depth at and near the facets so that the ridge depth is shallower at and near the etched facets than at the base of the ridge.
- the performance and modal behavior of edge-emitting ridge lasers and ridge HCSELs as fabricated through- this process was studied, and the remaining feature 163 (see Fig.
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2006/049182 WO2008079120A1 (fr) | 2006-12-26 | 2006-12-26 | Lasers à saillie à facette gravée dotés d'arrêt de gravure |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2102950A1 true EP2102950A1 (fr) | 2009-09-23 |
EP2102950A4 EP2102950A4 (fr) | 2017-05-31 |
Family
ID=39562793
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP06848109.2A Withdrawn EP2102950A4 (fr) | 2006-12-26 | 2006-12-26 | Lasers a saillie a facette gravee dotes d'arret de gravure |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP2102950A4 (fr) |
JP (1) | JP5264764B2 (fr) |
CN (1) | CN101569067B (fr) |
WO (1) | WO2008079120A1 (fr) |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01151284A (ja) * | 1987-12-09 | 1989-06-14 | Canon Inc | 半導体レーザー |
US5355386A (en) * | 1992-11-17 | 1994-10-11 | Gte Laboratories Incorporated | Monolithically integrated semiconductor structure and method of fabricating such structure |
KR100243417B1 (ko) * | 1997-09-29 | 2000-02-01 | 이계철 | 알더블유지 구조의 고출력 반도체 레이저 |
JP2002026453A (ja) * | 2000-07-03 | 2002-01-25 | Mitsubishi Electric Corp | リッジ導波路型半導体レーザ及びその製造方法 |
TW518741B (en) * | 2001-02-09 | 2003-01-21 | Ind Tech Res Inst | Fabrication method of edge-emitting or edge-coupled waveguide electro-optic device |
WO2003038956A1 (fr) * | 2001-10-29 | 2003-05-08 | Matsushita Electric Industrial Co., Ltd. | Procede de production d'un element emetteur de lumiere |
SE0200750D0 (sv) * | 2002-03-13 | 2002-03-13 | Optillion Ab | Method for manufacturing av photonic device and a photonic device |
JP2004014569A (ja) * | 2002-06-03 | 2004-01-15 | Toshiba Corp | 半導体レーザ及びその製造方法 |
US20040105476A1 (en) * | 2002-08-19 | 2004-06-03 | Wasserbauer John G. | Planar waveguide surface emitting laser and photonic integrated circuit |
JP2007534154A (ja) * | 2003-10-20 | 2007-11-22 | ビノプティクス・コーポレイション | 表面放射入射光子デバイス |
-
2006
- 2006-12-26 JP JP2009541287A patent/JP5264764B2/ja active Active
- 2006-12-26 EP EP06848109.2A patent/EP2102950A4/fr not_active Withdrawn
- 2006-12-26 CN CN2006800567932A patent/CN101569067B/zh active Active
- 2006-12-26 WO PCT/US2006/049182 patent/WO2008079120A1/fr active Application Filing
Non-Patent Citations (1)
Title |
---|
See references of WO2008079120A1 * |
Also Published As
Publication number | Publication date |
---|---|
CN101569067B (zh) | 2012-04-25 |
JP5264764B2 (ja) | 2013-08-14 |
CN101569067A (zh) | 2009-10-28 |
JP2010512659A (ja) | 2010-04-22 |
EP2102950A4 (fr) | 2017-05-31 |
WO2008079120A1 (fr) | 2008-07-03 |
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