EP2088402B1 - Schaltungsanordung zum Einstellen und Kalibrieren eines MEMS-Sensors zur Durchflussmessung von Gasen oder Flüssigkeiten - Google Patents

Schaltungsanordung zum Einstellen und Kalibrieren eines MEMS-Sensors zur Durchflussmessung von Gasen oder Flüssigkeiten Download PDF

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Publication number
EP2088402B1
EP2088402B1 EP09152626.9A EP09152626A EP2088402B1 EP 2088402 B1 EP2088402 B1 EP 2088402B1 EP 09152626 A EP09152626 A EP 09152626A EP 2088402 B1 EP2088402 B1 EP 2088402B1
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EP
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Prior art keywords
ambient
heating
transistor
coupled
mos transistors
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English (en)
French (fr)
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EP2088402A1 (de
Inventor
Mathias Krauss
Maha Jaafar
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IDT Europe GmbH
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Zentrum Mikroelektronik Dresden GmbH
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/696—Circuits therefor, e.g. constant-current flow meters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/6845—Micromachined devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/696—Circuits therefor, e.g. constant-current flow meters
    • G01F1/6965—Circuits therefor, e.g. constant-current flow meters comprising means to store calibration data for flow signal calculation or correction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/696—Circuits therefor, e.g. constant-current flow meters
    • G01F1/698—Feedback or rebalancing circuits, e.g. self heated constant temperature flowmeters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F25/00—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume
    • G01F25/10—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters

Definitions

  • the claimed invention generally relates to sensor calibration and more specifically to circuitry and methods for adjusting and calibrating a micro-electro-mechanical system (MEMS) sensor device for flow measurement of gases or liquids.
  • MEMS micro-electro-mechanical system
  • Such sensor devices could include a heating element or resistor (heater) and a Wheatstone Bridge from thermistors (heating element sensor) which are arranged in such a way that a flowing medium transports heat energy from the heating element (heater) to the heating element sensor.
  • This produces a voltage difference, which, after signal conditioning, represents a measure for the liquid or gas flow rate.
  • the difference between the temperature of the heater and the ambient temperature must be well-known or even better constant.
  • a further temperature sensor is necessary to determine the ambient temperature.
  • Current solutions use two resistors with the same temperature coefficient (TC) one for the heating element and one for the ambient temperature sensor.
  • the resistance value of the heating element is determined on the basis of the available operating voltage and the necessary thermal output.
  • the resistance value of the ambient temperature sensor is chosen to be a multiple of the resistance value of the heating element, in order to avoid self heating. Both resistors are part of a control loop where they are supplied with regulated currents, which are constant in ratio.
  • the control loop adjusts itself to an operating point, which guarantees a constant temperature difference between the heating element and environment, independently of variables like supply voltage, thermal resistance of the MEMS sensor, the type of flowing medium, or the ambient temperature.
  • the heating element, the heating element sensor and the ambient temperature sensor are integrated into today's MEMS sensor devices, three further external (non-integrated) resistors are necessary in addition to an operation amplifier for controlling the loop. These further resistors are discretely implemented, since they must be adjustable, in order to compensate the tolerances of the MEMS sensor devices.
  • Such a circuitry for adjusting and calibrating a MEMS sensor device for flow measurement of gases or liquids with a MOS-ambient transistor and a MOS-heating transistor is disclosed in EP 1 541 974 A1 .
  • EP 1 696 215 A1 discloses a circuitry for adjusting and calibrating a MEMS sensor device for flow measurement of gases or liquids. It comprises an amplifier having a positive input, a negative input, and an output, a heating transistor, an ambient transistors and a temperature difference resistance. This document also disclose that the ratio of the current that flows through the heating resistor and the current that flows through the ambient resistor can be adjusted by the emitter size of the heating transistor and the ambient transistor or by employing a plurality of transistors for each of both the heating transistor and the ambient transistor. These parameters can only be incorporated in the manufacturing process. A supplementary adjustment is not possible.
  • Circuitry for adjusting and calibrating a MEMS sensor device for flow measurement of gases or liquids.
  • the circuitry includes an amplifier having a positive input, a negative input, and an output.
  • the circuitry also includes a first heating metal oxide semiconductor (MOS) transistor and at least one further heating metal oxide semiconductor (MOS) transistor which is selectively connectable in parallel with said first heating MOS transistor, wherein said first and further heating MOS transistors have a collective heating transistor gate, heating transistor source, and heating transistor drain, wherein: 1) the heating transistor drain is coupled to the positive input of the amplifier; 2) the heating transistor source is configured to receive a supply voltage; and 3) the heating transistor gate is coupled to the amplifier output.
  • MOS metal oxide semiconductor
  • MOS further heating metal oxide semiconductor
  • the number of further heating MOS transistors connected in parallel with said first heating MOS transistor is configurable by a controller.
  • the circuitry further includes at least one further ambient MOS transistor which is selectively connectable in parallel with said first ambient MOS transistor, wherein said first and further ambient MOS transistors have a collective ambient transistor gate, ambient transistor source, and ambient transistor drain, wherein: 1) the ambient transistor gate is coupled to the amplifier output; and 2) the ambient transistor source is configured to receive the supply voltage.
  • the number of further ambient MOS transistors connected in parallel with said first ambient MOS transistor is configurable by a controller.
  • the circuitry also includes a temperature difference resistance configured: 1) to be coupled between an ambient connection and the ambient transistor drain; and 2) to be coupled between the ambient connection and the negative input of the amplifier.
  • a method of adjusting and calibrating a MEMS sensor device for flow measurement of gases or liquids is also disclosed.
  • a first number of heating MOS transistors are selectively connected in parallel.
  • a second number of ambient MOS transistors are selectively connected in parallel.
  • a bias current is removeably applied to a collective gate of the first number of heating MOS transistors, thereby creating a first current through a collective drain of the first number of heating MOS transistors.
  • the bias current is removeably applied to a collective gate of the second number of ambient MOS transistors, thereby creating a second current through a collective drain of the second number of ambient MOS transistors.
  • a first voltage caused by the first current passing through the heating element is determined.
  • a second voltage caused by the second current passing through the ambient temperature sensor is determined.
  • the first number of heating MOS transistors and/or the second number of ambient MOS transistors connected in parallel by a controller such that a difference between the first voltage and the second voltage is substantially minimized.
  • the circuitry has a heating connection configured to be coupled to the heating element.
  • the circuitry also has an ambient connection configured to be coupled to the ambient temperature sensor.
  • the circuitry also has a potentiometer having a first terminal, a second terminal, and a wiper, wherein the first terminal is coupled to the ambient connection.
  • the circuitry also has a reference connection configured to be coupled to the potentiometer wiper.
  • the circuitry also has an amplifier having a positive input, a negative input, and an output, wherein: 1) the negative input is coupled to the reference connection; and 2) the positive input is coupled to the heating connection.
  • the circuitry also includes one or more heating metal oxide semiconductor (MOS) transistors selectably coupled in parallel and having a heating transistor gate, a heating transistor source, and a heating transistor drain, wherein: 1) the heating transistor drain is coupled to the heating connection; and 2) the heating transistor source is configured to receive a supply voltage.
  • MOS heating metal oxide semiconductor
  • the circuitry also includes one or more ambient MOS transistors selectably coupled in parallel and having an ambient transistor gate, an ambient transistor source, and an ambient transistor drain, wherein: 1) the ambient transistor drain is coupled to the second terminal of the potentiometer; and 2) the ambient transistor source is configured to receive the supply voltage.
  • the circuitry also has a calibration MOS transistor having a calibration transistor gate, a calibration transistor source, and a calibration transistor drain, wherein 1) the calibration transistor source is configured to receive the supply voltage; 2) the calibration transistor drain is configured to receive a bias current; and 3) the calibration transistor gate is coupled to the calibration transistor drain.
  • the circuitry further has a selection switch having a first input, a second input, and an output, wherein: 1) the first switch input is coupled to the amplifier output; 2) the second switch input is coupled to the calibration transistor gate; and 3) the switch output is coupled to the ambient transistor gate and the heating transistor gate.
  • a goal of the claimed invention is a circuit architecture which makes it possible to replace external resistors in a heater control loop of prior art solutions by providing an integration-friendly solution while ensuring all requirements of stability and accuracy.
  • a further goal of the claimed invention is a circuit configuration and a procedure that enables an efficient adjustment of the current ratio on the individual sensor parameters. Since the precision of the measurement can be substantially improved, if the temperature dependence of the heat transport in the heating element sensor is part of the signal conditioning, it is an advantage to have access to the ambient temperature by direct measurement.
  • a procedure for it which can be realized with the suggested circuit without extra components, is likewise a goal of the invention.
  • FIGS. 1-4 schematically illustrate embodiments of circuitry for adjusting and calibrating a MEMS sensor device for flow measurement of gases or liquids.
  • FIG. 5 illustrates an embodiment of a method for adjusting and calibrating a MEMS sensor device for flow measurement of gases or liquids.
  • FIG. 1 schematically illustrates an embodiment of circuitry for adjusting and calibrating a MEMS sensor device for flow measurement of gases or liquids.
  • An amplifier 20 has positive and negative inputs and an output (O).
  • One or more heating metal oxide semiconductor (MOS) transistors 22 are selectably coupled in parallel.
  • the one or more heating MOS transistors 22 are part of a control loop which provides current to a heating element 32 (therefore identified as heating MOS transistors).
  • the parallel heating MOS transistors 22 have a heating transistor gate 24, a heating transistor source 26, and a heating transistor drain 28.
  • the heating transistor drain 28 is coupled to the positive input of the amplifier 20, the heating transistor source 26 is configured to receive a supply voltage 30, and the heating transistor gate 24 is coupled to the amplifier 20 output.
  • one or more ambient MOS transistors 34 are selectably coupled in parallel.
  • the one or more heating MOS transistors 34 are part of a path with the ambient temperature sensor 44 and therefore identified as heating MOS transistors).
  • the parallel ambient MOS transistors 34 have an ambient transistor gate 36, an ambient transistor source 38, and an ambient transistor drain 40.
  • the ambient transistor gate 36 is coupled to the amplifier 20 output.
  • the ambient transistor source 38 is configured to receive the supply voltage 30.
  • a temperature difference resistance 42 is configured to be coupled 1) at least partially between an ambient temperature sensor 44 and the ambient transistor drain 40 and 2) at least partially between the ambient temperature sensor 44 and the negative input of the amplifier 20.
  • the temperature difference resistance 42 is used to set the rise in temperature of the heating element 32 in relation to the ambient temperature sensor 44.
  • the one or more heating MOS transistors 22 and the one or more ambient MOS transistors are readily integrated as part of a MEMS device.
  • the number (m) of the one or more heating MOS transistors and/or the number (n) of the one or more ambient MOS transistors which are selectively coupled in parallel may be adjusted via digital controls 46, 48 in order to adjust the current ratio through the heating element 32 and the ambient temperature sensor 44 to match the ratio of the resistances of the heating element 32 and the ambient temperature sensor 44, thereby calibrating the heating element 32 and the ambient temperature sensor 44, for tolerance differences. This process will be described in greater detail through the following specification.
  • FIGS. 2A and 2B schematically illustrate further embodiments of circuitry for adjusting and calibrating a MEMS sensor device for flow measurement of gases or liquids.
  • the embodiment of FIG. 2A illustrates that the temperature difference resistance referred-to above can be a fixed resistor 50.
  • a fixed resistor 50 will suffice when only one fixed temperature difference is required.
  • the fixed temperature difference resistor 50 is coupled between the ambient temperature sensor 44 and both the negative input of the amplifier 20 and the ambient transistor drain 40.
  • the operation of the remainder of the circuitry in FIG. 2A is otherwise similar to that of FIG. 1 which has been discussed above.
  • FIG. 2B illustrates that the temperature difference resistance referred-to above can be a potentiometer 52 having a first terminal 54, a second terminal 56, and a wiper 58.
  • the potentiometer 52 is suitable for applications which require multiple temperature differences.
  • the first terminal 54 is configured to be coupled to the ambient temperature sensor 44
  • the second terminal 56 is coupled to the ambient transistor drain 40
  • the wiper is coupled to the negative input of the amplifier 20.
  • the operation of the remainder of the circuitry in FIG. 2B is otherwise similar to that of FIG. 1 which has been discussed above.
  • FIG. 3 illustrates another embodiment of circuitry for adjusting and calibrating a MEMS sensor device for flow measurement of gases or liquids, with additional elements designed to further enable the integration of the adjustment and calibration features.
  • a heating connection 60 is configured to be coupled to a heating element 62.
  • An ambient connection 64 is configured to be coupled to an ambient temperature sensor 66.
  • a potentiometer 68 has a first terminal 70, a second terminal 72, and a wiper 74. The first terminal 70 is coupled to the ambient connection 64.
  • the potentiometer 68 may be a digital potentiometer, adjustable in response to a temperature difference digital control 76.
  • a reference connection 78 is coupled to the wiper 74.
  • the circuitry also has an amplifier 80 having a positive input, a negative input, and an output (O). The negative input of the amplifier 80 is coupled to the reference connection 78.
  • the positive input of the amplifier 80 is coupled to the heating connection 60.
  • One or more heating MOS transistors 82 are selectably coupled in parallel and have a collective heating transistor gate 84, heating transistor source 86, and a heating transistor drain 88.
  • the heating transistor drain 88 is coupled to the heating connection 60 and the heating transistor source 86 is configured to receive a supply voltage 90.
  • one or more ambient MOS transistors 92 are selectably coupled in parallel and have a collective ambient transistor gate 94, ambient transistor source 96, and ambient transistor drain 98.
  • the ambient transistor drain 98 is coupled to the second terminal 72 of the potentiometer 68.
  • the ambient transistor source 96 is configured to receive the supply voltage 90.
  • a calibration MOS transistor 100 has a calibration transistor gate 102, calibration transistor source 104, and calibration transistor drain 106.
  • the calibration transistor source 104 is configured to receive the supply voltage 90.
  • the calibration transistor drain 106 is configured to receive a bias current 108, and the calibration transistor gate 102 is coupled to the calibration transistor drain 106.
  • a selection switch 110 is provided, having a first input 112, a second input 114, and an output 116.
  • the first switch input 112 is coupled to the output of the amplifier 20.
  • the second switch input 114 is coupled to the calibration transistor gate 102, and the switch output 116 is coupled to the ambient transistor gate 94 and the heating transistor gate 84.
  • a heating digital control 118 instructs or controls the one or more heating MOS transistors 82 to select the number (m) of heating MOS transistors which are coupled in parallel. This can be accomplished through individual gate switching.
  • an ambient digital control 120 instructs or controls the one or more ambient MOS transistors 92 to select the number (n) of heating MOS transistors which are coupled in parallel.
  • the heating connection 60, ambient connection 64, and reference connection 78 each may be coupled to a multiplexer 122 for sharing voltage signals from those connections with a measurement channel 124. Signals obtained from the heating connection 60, ambient connection 64, and/or reference connection 78 can be used during measurement and calibration routines as described in further detail with regard to FIGS. 4 and 5 .
  • FIG. 4 schematically illustrates another embodiment of circuitry for adjusting and calibrating a MEMS sensor device for flow measurement of gases or liquids. This embodiment is described assuming a N-well CMOS process, however it should be understood that a p-well or other types of MOS processes could be used in other embodiments.
  • FIG. 4 illustrates the circuit of the control loop 126, which keeps a constant temperature difference between the heater (heating element) 128 and the ambient temperature sensor 130.
  • the heating element resistor 128 and the ambient temperature sensor resistor 130 are components of the MEMS sensor device (chip 132 and are connected on one side to ground 134. Resistor 128 works as a heating element, while resistor 130 operates as an ambient temperature sensor.
  • a second terminal of the heating element 128 is coupled with a common drain terminal of one or more p-channel heating transistors 136. Their common gate terminal is connected to the output of selection switch 138 and their common source terminal is connected to the supply voltage VDD.
  • the second terminal of the ambient temperature sensor 130 is connected with the first terminal of a digital potentiometer 140, whose second terminal is connected to a common drain terminal of one or more p-channel ambient transistors 142, whose gate terminal is likewise connected to the output of the selection switch 138.
  • the source terminal of a calibration PMOSFET 144 is connected to the supply voltage VDD.
  • the wiper of the digital potentiometer 140 is connected to the negative input of an operational amplifier 146.
  • Selection switch 138 connects the gate terminals of the one or more heating and ambient transistors 136, 142 in the normal operation mode of the control loop 126 with the output of the operational amplifier 146 or during calibration mode with the gate and the drain of the calibration transistor 144.
  • the calibration transistor 144 is configured as a diode in this embodiment, its source terminal is connected to the supply voltage VDD, and a bias current is fed into its drain.
  • the positive input of the operational amplifier 146 is coupled to a heating connection A and the drain of the one or more heating MOS transistors 136.
  • the one or more heating MOS transistors 136 and the one or more ambient MOS transistors 142 have been implemented as parallel units with substantially equal layouts, whereby the number m of the heating MOS transistors 136 versus the number of n of the ambient MOS transistors 142 has an inverse relationship to the resistance of the heating element 128 and to the resistance of the ambient temperature sensor 130.
  • the number of m of the single transistors and or the number n of the single transistors joined in parallel are changeable by digital controls 148, 150.
  • heating connection A can be connected to the differential measuring channel 152 by means of a multiplexer 154, which serves the circuit for measurement of the Wheatstone Bridge in normal operation.
  • the impact of the circuit configuration is to use the change of its resistance, caused by self-heating of the heating element 128, in such a way that the temperature of the heating resistor lies 128 at a constant amount over the ambient temperature.
  • R3 is the value of the potentiometer 140
  • RTO the nominal resistance of the ambient temperature sensor 130 at room temperature
  • TC is the temperature coefficient of the ambient temperature sensor 130 as well as the heating element 128.
  • the rise in temperature of the heating element 128 can be set in relation to the environment by means of the potentiometer 140. Assuming that the potentiometer 140 has a negligible temperature coefficient, this temperature difference is independent of the ambient temperature.
  • the embodiments disclosed herein, and their equivalents have the advantage of implementing this theoretically derivable circuit behavior without considerable impairment to the integrated CMOS circuit.
  • a direct conversion of a discreet component circuit fails because of the fact that relatively low impedance, electronically adjustable resistors must be integrated. Since the necessary transistor switches for such a direct conversion would lie in the current path, a falsification arises that could prevent a direct conversion of a discreet component circuit from maintaining the required accuracy.
  • a defined current ratio is set by the one or more heating MOS transistors 136 and the one or more ambient MOS transistors 142, whereby the absolute value of the current can be regulated over the common gate connection, without changing the current ratio.
  • the adjustment of the current ratio to the existing resistance ratio of heating element 128 and ambient temperature sensor 130 is made possible by the fact that the transistors 136 and 142 are made out of parallel unit transistors, whose ratio m/n can be changed in the context of the sensor calibration by switching on or switching off units. In this embodiment, switching a unit off takes place by digitally controlling 148, 150 the gate connection. This way no interference into the current path is necessary and therefore the regulation quality is not reduced. In the normal mode of the regulation, the common gate terminal of the one or more heating MOS transistors 136 and the common gate terminal of the one or more ambient MOS transistors 142 are connected to the output of the operational amplifier 146 by the selection switch 138.
  • the potentiometer 140 which determines the temperature difference, is implemented favorably as digital potentiometer, controllable by a temperature difference digital control 156. Due to the current source characteristics of the transistors 136, 142 it is possible to keep the pick-up of the potentiometer 140 free of any load, thereby minimizing any affect on the regulation quality. As noted previously, many applications require only one fixed temperature difference. In such cases, the potentiometer 140 can be replaced by a fixed resistor with a low TC. When using a fixed resistor in-place of potentiometer 140, the negative input of the operational amplifier 146 has to be connected with the interconnect point of fixed resistor and the common drain terminal of the one or more ambient MOS transistors.
  • a calibration mode may be used in which the common gate terminals of the transistors 136, 142 are connected with the gate/drain terminals of the calibration MOS transistor 144 by the selection switch 138.
  • currents of the ratio m/n are fed into both the heater 128 and ambient temperature sensor 130, which are preferably small enough to prevent self heating of the resistors.
  • the absolute value of the voltage difference can be minimized by gradual switching off or on 1) units of the one or more heating MOS transistors 136 and/or 2) units of the one or more ambient MOS transistors. In this way, a substantially optimized matching of the current ratio to the resistance ratio may be reached.
  • This setting can be stored, for example, in the EEPROM of the signal conditioning unit of the circuit.
  • the described calibration process can be accomplished on a finalized flow sensor module without additional test points, i.e. only the digital communication interface existing on such a module is needed.
  • Another feature of the circuit is the possibility of the measurement of the voltage at the reference connection B and ambient connection C against ground. For this, the voltages may be fed over the multiplexer 154 to the measuring channel 152. These two voltages can be captured from time to time without affecting the function of the control loop 126.
  • the ratio of the voltage at heating connection A and reference connection B is a measure for the ambient temperature, which can be used for the correction of the temperature dependence of the flow measurement in the context of signal conditioning.
  • FIG. 5 illustrates one embodiment of a method for adjusting and calibrating a heating element and an ambient temperature sensor.
  • a first number of heating MOS transistors are selectably coupled 158 in parallel.
  • a second number of ambient MOS transistors are selectably coupled 160 in parallel.
  • a bias current is removeably applied 162 to a collective gate of the first number of heating MOS transistors, thereby creating a first current through a collective drain of the first number of heating MOS transistors.
  • the bias current is removeably applied 164 to a collective gate of the second number of ambient MOS transistors, thereby creating a second current through a collective drain of the second number of ambient MOS transistors.
  • a first voltage caused by the first current passing through the heating element is determined 166.
  • a second voltage caused by the second current passing through the ambient temperature sensor is determined 168.
  • the first number of heating MOS transistors and/or the second number of ambient MOS transistors selectably coupled in parallel are adjusted 170 to substantially minimize a difference between the first voltage and the second voltage.

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Claims (14)

  1. Schaltungsanordnung zum Einstellen und Kalibrieren einer MEMS-Sensorvorrichtung für die Durchflussmessung von Gasen oder Flüssigkeiten, die Folgendes umfasst:
    - einen Verstärker (20) mit einem positiven Eingang, einem negativen Eingang und einem Ausgang (0);
    - einen Heiztransistor (22)
    - einen Umgebungstransistor (34) und
    - einen Temperaturdifferenzwiderstand (42), dadurch gekennzeichnet,
    - dass der Heiztransistor (22) einen ersten Heiz-Metalloxidhalbleiter-Transistor (Heiz-MOS-Transistor) und wenigstens einen weiteren Heiz-Metalloxidhalbleiter-Transistor (Heiz-MOS-Transistor) (136) umfasst, der mit dem ersten Heiz-MOS-Transistor wahlweise parallel geschaltet werden kann, wobei der erste und der weitere Heiz-MOS-Transistor ein gemeinsames Heiztransistor-Gate, eine gemeinsame Heiztransistor-Source und einen gemeinsamen Heiztransistor-Drain besitzen, wobei:
    1) der Heiztransistor-Drain mit dem positiven Eingang des Verstärkers gekoppelt ist;
    2) die Heiztransistor-Source konfiguriert ist, um eine Versorgungsspannung zu empfangen;
    3) das Heiztransistor-Gate mit dem Verstärkerausgang gekoppelt ist;
    und wobei die Anzahl weiterer Heiz-MOS-Transistoren, die zu dem ersten Heiz-MOS-Transistor parallel geschaltet sind, durch eine Steuereinheit (46) konfigurierbar ist,
    - dass der Umgebungstransistor (34) einen ersten Umgebungs-MOS-Transistor und wenigstens einen weiteren Umgebungs-MOS-Transistor (142) umfasst, der mit dem ersten Umgebungs-MOS-Transistor wahlweise parallel geschaltet werden kann, wobei der erste und der weitere Umgebungs-MOS-Transistor ein gemeinsames Umgebungstransistor-Gate, eine gemeinsame Umgebungstransistor-Source und einen gemeinsamen Umgebungstransistor-Drain besitzen, wobei:
    1) das Umgebungstransistor-Gate mit dem Verstärkerausgang gekoppelt ist; und
    2) die Umgebungstransistor-Source konfiguriert ist, um die Versorgungsspannung zu empfangen;
    und wobei die Anzahl weiterer Umgebungs-MOS-Transistoren, die zu dem ersten Umgebungs-MOS-Transistor parallel geschaltet sind, durch eine Steuereinheit (48) konfigurierbar ist; und
    - dass der Temperaturdifferenzwiderstand konfiguriert ist:
    1) zwischen eine Umgebungsverbindung und den Umgebungstransistor-Drain gekoppelt zu werden; und
    2) zwischen die Umgebungsverbindung und den negativen Eingang des Verstärkers gekoppelt zu werden.
  2. Schaltungsanordnung nach Anspruch 1, wobei der Temperaturdifferenzwiderstand einen festen Widerstand enthält, der einen ersten Anschluss und einen zweiten Anschluss besitzt, wobei:
    der erste Anschluss konfiguriert ist, mit der Umgebungssensorverbindung gekoppelt zu werden; und
    der zweite Anschluss mit dem Umgebungstransistor-Drain und mit dem negativen Eingang des Verstärkers gekoppelt ist.
  3. Schaltungsanordnung nach Anspruch 1, wobei der Temperaturdifferenzwiderstand ein Potentiometer enthält, das einen ersten Anschluss, einen zweiten Anschluss und einen Schleifer besitzt, wobei:
    der erste Anschluss konfiguriert ist, mit der Umgebungsverbindung gekoppelt zu werden;
    der zweite Anschluss mit dem Umgebungstransistor-Drain gekoppelt ist; und
    der Schleifer mit dem negativen Eingang des Verstärkers gekoppelt ist.
  4. Schaltungsanordnung nach Anspruch 3, die ferner Folgendes umfasst:
    e) einen Kalibrierungs-MOS-Transistor, der ein Kalibrierungstransistor-Gate, eine Kalibrierungstransistor-Source und einen Kalibrierungstransistor-Drain besitzt, wobei:
    1) die Kalibrierungstransistor-Source konfiguriert ist, die Versorgungsspannung zu empfangen;
    2) der Kalibrierungstransistor-Drain konfiguriert ist, einen Vorstrom zu empfangen; und
    3) das Kalibrierungstransistor-Gate mit dem Kalibrierungstransistor-Drain gekoppelt ist; und
    f) einen Wählschalter in der Kopplung zwischen dem Verstärkerausgang und den Umgebungstransistor- und Heiztransistor-Gates, der einen ersten Eingang, einen zweiten Eingang und einen Ausgang besitzt, wobei:
    1) der erste Schaltereingang mit dem Verstärkerausgang gekoppelt ist;
    2) der zweite Schaltereingang mit dem Kalibrierungstransistor-Gate gekoppelt ist; und
    3) der Schalterausgang mit dem Umgebungstransistor-Gate und mit dem Heiztransistor-Gate gekoppelt ist.
  5. Schaltungsanordnung nach Anspruch 4, die ferner eine Umgebungsverbindung umfasst, die mit dem ersten Anschluss des Potentiometers gekoppelt ist und konfiguriert ist, mit dem Umgebungstemperatursensor gekoppelt zu werden, und wobei:
    die Kopplung zwischen dem Heiztransistor-Drain und dem positiven Eingang des Verstärkers eine Heizverbindung umfasst, die konfiguriert ist, mit dem Heizelement gekoppelt zu werden; und
    die Kopplung zwischen dem Schleifer und dem negativen Eingang des Verstärkers eine Referenzverbindung umfasst.
  6. Schaltungsanordnung nach Anspruch 5, wobei das Potentiometer ein digitales Potentiometer enthält, wobei die Schaltungsanordnung ferner eine digitale Temperaturdifferenzsteuerung umfasst, die mit dem digitalen Potentiometer gekoppelt ist und konfiguriert ist, eine gewünschte Temperaturdifferenz zu wählen.
  7. Schaltungsanordnung nach Anspruch 5, die ferner eine digitale Heizsteuerung umfasst, die mit dem einen oder den mehreren Heiz-MOS-Transistoren gekoppelt ist, um wahlweise zu steuern, wie viele des einen oder der mehreren Heiz-MOS-Transistoren parallel aktiv sind.
  8. Schaltungsanordnung nach Anspruch 5, die ferner eine digitale Umgebungssteuerung umfasst, die mit dem einen oder den mehreren Umgebungs-MOS-Transistoren gekoppelt ist, um wahlweise zu steuern, wie viele des einen oder der mehreren Umgebungs-MOS-Transistoren parallel aktiv sind.
  9. Schaltungsanordnung nach Anspruch 5, die ferner Folgendes umfasst:
    eine digitale Heizsteuerung, die mit dem einen oder den mehreren Heiz-MOS-Transistoren gekoppelt ist, um wahlweise zu steuern, wie viele des einen oder der mehreren Heiz-MOS-Transistoren parallel aktiv sind; und
    eine digitale Umgebungssteuerung, die mit den einen oder den mehreren Umgebungs-MOS-Transistoren gekoppelt ist, um wahlweise zu steuern, wie viele des einen oder der mehreren Umgebungs-MOS-Transistoren parallel aktiv sind.
  10. Schaltungsanordnung nach Anspruch 9, die ferner Folgendes umfasst: einen Multiplexer, der mit der Heizverbindung, der Umgebungsverbindung und der Referenzverbindung gekoppelt ist.
  11. Verfahren zum Einstellen und Kalibrieren einer MEMS-Sensorvorrichtung für die Durchflussmessung von Gasen oder Flüssigkeiten,
    dadurch gekennzeichnet, dass es Folgendes umfasst:
    wahlweises Parallelschalten einer ersten Anzahl von Heiz-MOS-Transistoren (22);
    wahlweises Parallelschalten einer zweiten Anzahl von Umgebungs-MOS-Transistoren (34);
    aufhebbares Eingeben eines Vorstroms in ein gemeinsames Gate der ersten Anzahl von Heiz-MOS-Transistoren, um dadurch einen ersten Strom durch einen gemeinsamen Drain der ersten Anzahl von Heiz-MOS-Transistoren zu erzeugen;
    aufhebbares Eingeben des Vorstroms in ein gemeinsames Gate der zweiten Anzahl von Umgebungs-MOS-Transistoren, um dadurch einen zweiten Strom durch einen gemeinsamen Drain der zweiten Anzahl von Umgebungs-MOS-Transistoren zu erzeugen;
    Bestimmen einer ersten Spannung, die durch den ersten Strom hervorgerufen wird, der durch das Heizelement fließt;
    Bestimmen einer zweiten Spannung, die durch den zweiten Strom hervorgerufen wird, der durch den Umgebungstemperatursensor fließt; und
    Definieren der ersten Anzahl von Heiz-MOS-Transistoren und/oder der zweiten Anzahl von Umgebungs-MOS-Transistoren, die parallel geschaltet sind, durch eine Steuereinheit (46; 48) in der Weise, dass eine Differenz zwischen der ersten Spannung und der zweiten Spannung im Wesentlichen minimal gemacht wird.
  12. Verfahren nach Anspruch 11, wobei das aufhebbare Eingeben des Vorstroms in die gemeinsamen Gates der ersten Anzahl von Heiz-MOS-Transistoren und der zweiten Anzahl von Umgebungs-MOS-Transistoren Folgendes umfasst:
    Schalten der gemeinsamen Gates von einem Steuerschleifenverstärkerausgang zu einem Gate eines Kalibrierungs-MOS-Transistors, wobei der Vorstrom mit einem Drain des Kalibrierungs-MOS-Transistors gekoppelt wird und das Gate des Kalibrierungs-MOS-Transistors ferner mit dem Drain des Kalibrierungs-MOS-Transistor gekoppelt wird.
  13. Verfahren nach Anspruch 11, wobei:
    das wahlweise Parallelschalten der ersten Anzahl von Heiz-MOS-Transistoren das digitale Steuern einzelner Gate-Verbindungen für die erste Anzahl von Heiz-MOS-Transistoren umfasst; und
    das wahlweise Parallelschalten der zweiten Anzahl von Umgebungs-MOS-Transistoren das digitale Steuern einzelner Gate-Verbindungen für die zweite Anzahl von Umgebungs-MOS-Transistoren umfasst.
  14. Verfahren nach Anspruch 11, das ferner das Speichern der ersten Anzahl von Heiz-MOS-Transistoren und/oder der zweiten Anzahl von Umgebungs-MOS-Transistoren, die wahlweise parallel geschaltet sind, um eine Differenz zwischen der ersten Spannung und der zweiten Spannung im Wesentlichen minimal zu machen, umfasst.
EP09152626.9A 2008-02-11 2009-02-11 Schaltungsanordung zum Einstellen und Kalibrieren eines MEMS-Sensors zur Durchflussmessung von Gasen oder Flüssigkeiten Active EP2088402B1 (de)

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US9182295B1 (en) 2011-09-09 2015-11-10 Sitime Corporation Circuitry and techniques for resistor-based temperature sensing
CN103674120B (zh) * 2012-09-20 2018-07-06 新奥科技发展有限公司 一种基于mems敏感元件的复合气体流量计量装置及其测量方法
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GB201501935D0 (en) 2015-02-05 2015-03-25 Tooms Moore Consulting Ltd And Trow Consulting Ltd Water flow analysis
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JP4359705B2 (ja) * 2003-12-08 2009-11-04 株式会社日立製作所 発熱抵抗式流量測定装置
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