EP2082231A2 - Dispositif capteur magnetique pourvu d'une paire d'unites de detection - Google Patents

Dispositif capteur magnetique pourvu d'une paire d'unites de detection

Info

Publication number
EP2082231A2
EP2082231A2 EP07826574A EP07826574A EP2082231A2 EP 2082231 A2 EP2082231 A2 EP 2082231A2 EP 07826574 A EP07826574 A EP 07826574A EP 07826574 A EP07826574 A EP 07826574A EP 2082231 A2 EP2082231 A2 EP 2082231A2
Authority
EP
European Patent Office
Prior art keywords
magnetic sensor
magnetic
sensor device
primary
detection unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07826574A
Other languages
German (de)
English (en)
Inventor
Haris Duric
Josephus Arnoldus Henricus Maria Kahlman
Pieter G. Blanken
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Priority to EP07826574A priority Critical patent/EP2082231A2/fr
Publication of EP2082231A2 publication Critical patent/EP2082231A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
    • G01R33/1269—Measuring magnetic properties of articles or specimens of solids or fluids of molecules labeled with magnetic beads

Definitions

  • the invention relates to a magnetic sensor device for the detection of magnetized particles which comprises pairs of detection units with a magnetic field generator and a magnetic sensor element. Moreover, it relates to the use of such a magnetic sensor device.
  • a magnetic sensor device which may for example be used in a microfluidic biosensor for the detection of target molecules, e.g. biological molecules, labeled with magnetic beads.
  • the microsensor device is provided with an array of detection units comprising wires for the generation of a magnetic excitation field and Giant Magneto Resistances (GMR) for the detection of magnetic reaction fields generated by magnetized, immobilized beads.
  • the signal (resistance change) of the GMRs is then indicative of the number of the beads near the sensor.
  • a magnetic sensor device shall primarily (but not exclusively) serve for the detection of magnetized particles in an investigation region, for example for the detection of magnetic beads attached as labels to target molecules in a sample fluid that is provided in a sample chamber.
  • the magnetic sensor device comprises the following components: a) A “primary detection unit” and a “secondary detection unit”, wherein the terms “primary” and “secondary” are just chosen to distinguish these units and shall not imply that there must be any difference or hierarchy between them.
  • Each of the primary and secondary detection units comprises the following components: al) A “magnetic sensor element" with a sensitive direction.
  • a (geometrical) "line” extends straightly, either infinitely in one or two directions or not, and has no particular orientation. -
  • a “direction” is a line that has an orientation, i.e. a sense in which it runs from a starting point to an end point (wherein these points may lie in the infinity).
  • a direction can mathematically be described as a vector. Usually, a direction has a finite extension and is visualized as an arrow.
  • the "sensitive direction" of the magnetic sensor element then means that the sensor element is most (or only) sensitive with respect to components of a magnetic field vector that are parallel to said spatial direction. Moreover, it makes a difference if these components are equally oriented or oppositely oriented with respect to the sensitive direction. Usually, the magnetic sensor element has only one single sensitive direction and is substantially insensitive to components of a magnetic field perpendicular to this direction.
  • said magnetic reaction field of the magnetized particles shall have an "intersection angle", which is by definition the angle between the vector of the reaction field and the sensitive direction of the associated magnetic sensor element at the location of this associated magnetic sensor element. In most cases, the magnetic reaction field is parallel (and equally oriented) or anti-parallel to the sensitive direction of the associated magnetic sensor element, meaning that the intersection angle is 0° or 180°, respectively. In general, the intersection angle may however assume any value between 0 and 180°.
  • the orientation of the magnetic reaction field will not only depend on the applied magnetic excitation field but also on the actual distribution of magnetized particles.
  • the magnetic reaction field will therefore in the context of the present invention always refer to a predetermined representative orientation, for example to the mean orientation of all practically possible magnetic reaction fields.
  • the above defined components xyz of the detection units will in the following sometimes be referred to as of the "primary component xyz” or as the “secondary component xyz” dependent on their membership to the primary or secondary detection unit, respectively.
  • Primary magnetic sensor element will thus for example be a short notation for the "magnetic sensor element of the primary detection unit”.
  • An evaluation unit for sensing the difference of the output signals of the magnetic sensor elements of the primary and of the secondary detection unit may be implemented as a circuitry on the same microelectronic chip as the detection units, or they may be realized (at least in part) externally from this chip.
  • the described magnetic sensor device achieves a high signal-to-noise ratio as the evaluation unit senses the difference between two measurement signals, which implies that disturbances which affect both magnetic sensor elements similarly (e.g. supply noise, temperature drift, common-mode interference, cross-talk) will mutually cancel.
  • a cancellation of the desired measurement signal i.e. the magnitude of the magnetic reaction fields excited in the magnetized particles, is however prevented. This is due to the fact that, according to feature a2), the excited reaction fields have different intersection angles in the primary and the secondary magnetic sensor element and will therefore yield different measurements.
  • the primary and the secondary detection unit have substantially the same design (i.e. they comprise the same materials/components with the same dimensions and relative arrangement). Such an identical construction guarantees that disturbances will affect both detection units similarly and will therefore (almost) exactly cancel in the difference of the output signals.
  • the primary and the secondary magnetic excitation field may more or less overlap in the investigation region.
  • the primary and secondary magnetic field generators are however arranged in such a way that their magnetic excitation fields are predominant in different parts of the investigation region (i.e. they contribute to at least 70% of the field strength in said part). Most preferably, their magnetic excitation fields have substantially no overlap, which minimizes the related cross-talk between the primary and the secondary detection unit.
  • the primary magnetic reaction field will reach only the associated primary magnetic sensor element, and the secondary magnetic reaction field will reach only the associated secondary magnetic sensor element.
  • the magnetic cross-talk between the primary and the secondary detection unit can considerably be reduced. A minimization of the cross-talk is of course reached in a combination with the aforementioned embodiment, i.e. if also the primary and the secondary magnetic excitation fields do not overlap.
  • the (primary and/or secondary) magnetic field generator may for example be realized by at least one conductor wire. In typical embodiments, it will be realized by a pair of two parallel extending wires.
  • the (primary and/or secondary) magnetic sensor element may particularly comprise a Hall sensor, wherein the sensitive direction of this sensor is determined by the direction of current flow through it. Two identical, parallel Hall sensors will for example produce signals of opposite polarity if anti-parallel currents are conducted through them.
  • the (primary and/or secondary) magnetic sensor element may also comprise a magneto- resistive element like a GMR (Giant Magneto Resistance), a TMR (Tunnel Magneto Resistance), or an AMR (Anisotropic Magneto Resistance) element, wherein the sensitive direction of a GMR element is for example determined by its pinned layer.
  • the magnetic field generator and the magnetic sensor element may be realized as an integrated circuit, for example using CMOS technology together with additional steps for realizing the magneto -resistive components on top of a CMOS circuit.
  • Said integrated circuit may optionally also comprise the control unit and/or the evaluation unit of the magnetic sensor device.
  • the primary and the secondary sensitive direction may in general be arbitrarily positioned in space, it is preferred that they are parallel and equally oriented. Though it is in principle known to produce neighboring GMRs as magnetic sensor elements that have anti-parallel sensitive directions (cf. WO 2004/109725 Al), it is much easier if the magnetic sensor elements on a microchip may all have the same sensitive direction. Different effects of the signals of interest (i.e. of the magnetic reaction fields) can in the proposed magnetic sensor device be achieved in spite of equally oriented sensitive directions by the application of different magnetic excitation fields.
  • control unit is adapted to supply oppositely directed currents of equal magnitude to the primary and the secondary magnetic field generator, respectively.
  • the oppositely directed currents will then generate magnetic excitation fields with opposite senses of rotation, which will consequently induce oppositely oriented magnetic reaction fields in the magnetized particles.
  • the intersection angles between these reaction fields and the primary and the secondary sensitive direction, respectively, will therefore differ by 180°, yielding a maximal difference between the output signals of the primary and the secondary magnetic sensor element.
  • the magnetic sensor device may (and typically will) comprise more than just one pair of primary and secondary detection units.
  • the magnetic sensor elements of several (optionally of all) detection units are connected to a common line, for example to ground. In this way the number of interconnections can be reduced significantly.
  • the magnetic sensor device comprises a second pair of a primary and a secondary detection unit, wherein the magnetic sensor elements of all four detection units are connected as a Wheatstone bridge.
  • the magnetic sensor elements are realized by (magneto-) resistances
  • the Wheatstone bridge allows a very sensitive detection of any resistance changes while disturbances like temperature drifts are optimally suppressed.
  • the sensitive directions of all magnetic sensor elements of the Wheatstone bridge are parallel to each other and equally oriented. As was already mentioned above, this allows for the simplest manufacturing without additional production steps.
  • the intersection angles (between magnetic reaction field and sensitive direction, as defined above) of two magnetic sensor elements that are connected in series differ by about 180°.
  • the magnetic reaction fields acting on these magnetic sensor elements will therefore have opposite effects, e.g. increase the resistance of the one and reduce the resistance of the other magnetic sensor element.
  • the voltage between the magnetic sensor elements will therefore be shifted in the same direction by both elements.
  • the proposed design is realized - with opposite sign - in both branches of the Wheatstone bridge.
  • a falling voltage at a node between the two magnetic sensor elements of a first branch will then be accompanied by a rising voltage at a node between the magnetic sensor elements of the other branch and vice versa, yielding a maximal voltage difference between these two nodes.
  • the invention further relates to the use of the microelectronic magnetic sensor device described above for molecular diagnostics, biological sample analysis, and/or chemical sample analysis, particularly the detection of small molecules.
  • Molecular diagnostics may for example be accomplished with the help of magnetic beads that are directly or indirectly attached to target molecules.
  • Figure 1 shows schematically a primary and a secondary detection unit of the magnetic sensor device according to the present invention
  • Figure 2 illustrates the intersection angle between magnetic reaction fields and the sensitive directions of magnetic sensor elements
  • Figure 3 shows schematically two pairs of primary and secondary detection units connected as a Full Wheatstone bridge
  • Figure 4 shows schematically one pair of primary and secondary detection units connected as a Half Wheatstone bridge;
  • Figure 5 shows a variant of the embodiment of Figure 4, in which two Half Wheatstone bridges are coupled to a common line.
  • Figure 1 illustrates a microelectronic magnetic sensor device 100 according to the present invention in the particular application as a biosensor for the detection of magnetically interactive particles, e.g. superparamagnetic beads 1 in an investigation region (sample chamber 2).
  • Magneto -resistive biochips or biosensors have promising properties for bio-molecular diagnostics, in terms of sensitivity, specificity, integration, ease of use, and costs. Examples of such biochips are described in the WO 2003/054566, WO 2003/054523, WO 2005/010542 A2, WO 2005/010543 Al, and WO 2005/038911 Al, which are incorporated into the present application by reference.
  • a biosensor typically consists of an array of (e.g. 100) magnetic sensor devices 100 of the kind shown in Figure 1 and may thus simultaneously measure the concentration of a large number of different target molecules (e.g. protein, DNA, amino acids, drugs of abuse) in a solution (e.g. blood or saliva).
  • target molecules e.g. protein, DNA, amino acids, drugs of abuse
  • a solution e.g. blood or saliva
  • the so-called “sandwich assay” this is achieved by providing a binding surface 3 with first antibodies to which the target molecules may bind.
  • Superparamagnetic beads 1 carrying second antibodies may then attach to the bound target molecules. For simplicity, only the beads 1 are shown in the Figure.
  • Figure 1 further shows a "primary detection unit” P and a “secondary detection unit” S which are substantially of identical design and realized in a substrate below the surface 3.
  • the detection units P and S each comprise primary and secondary excitation wires 11 and 21 (serving as magnetic field generators) and primary and secondary GMR elements 12 and 22 (serving as magnetic sensor elements), respectively.
  • a current flowing in the excitation wires 11 and 21 will generate a primary magnetic excitation field Bn and a secondary magnetic excitation field B 2 1, respectively, which in turn magnetize the superparamagnetic beads 1.
  • the primary and secondary magnetic reaction fields B' ⁇ , B' 2 i from the superparamagnetic beads 1 will finally introduce an in- plane magnetization component in the GMRs 12 and 22, respectively, which results in a measurable resistance change.
  • the primary GMR element 21 and the secondary GMR element 22 are connected to a combined evaluation and control unit 40 which senses the signal difference ⁇ (typically a difference in the voltage drop across the GMR elements when equal sensing currents are applied to them).
  • ⁇ typically a difference in the voltage drop across the GMR elements when equal sensing currents are applied to them.
  • the evaluation/control unit 40 is further connected to the parallel excitation wires 11 and 21 for supplying them with excitation currents.
  • excitation currents have the same magnitude and are oppositely directed (i.e. "anti-parallel") such that the generated magnetic excitation fields Bn and Bi 2 have opposite senses of rotation.
  • the induced magnetic reaction fields B' ⁇ and B'i 2 have opposite senses of rotation, too. This implies in the shown example that the intersection angle CCi between the primary magnetic reaction field B' ⁇ and the primary sensitive direction D 2 i is 180°, while the intersection angle CC 2 between the secondary magnetic reaction field B'i 2 and the secondary sensitive direction D 22 is 0°.
  • Figure 2 contains a principal sketch regarding the general case with respect to the primary and secondary sensitive directions Di 2 and D 22 and the associated primary and secondary magnetic reaction fields B' ⁇ and B' 2 i. While the sensitive directions were parallel and equally oriented in that example of Figure 1, they may in general have any spatial orientation.
  • the intersection angle between a sensitive direction and an associated magnetic reaction field for example the intersection angle CCi between the primary sensitive direction Di 2 and the primary magnetic reaction field B' ⁇ , is then defined as the angle between the associated vectors.
  • a maximal spread of the signals generated by the primary and the secondary GMR elements is achieved if the difference between the primary and secondary intersection angles,
  • Such an optimization can be achieved both by (i) parallel sensitive directions and anti-parallel magnetic reaction fields ( Figure 1) as well as by (ii) anti-parallel sensitive directions and parallel magnetic reaction fields.
  • the latter option is however unfavorable as it is difficult to produce.
  • anti-parallel sensitive directions have the disadvantage that an external magnetic field which is approximately homogeneous in the region of the primary and the secondary detection units P, S induces measurement signals that sum up in the output difference, while they would cancel in the arrangement of Figure 1.
  • FIG 3 shows the layout of a preferred magnetic sensor device 200 according to the invention, in which two primary detection units P, P' and two secondary detection units S, S' are arranged as a Full Wheatstone bridge. More precisely, the associated GMR elements 12, 22, 32 and 42 are connected as a full Wheatstone bridge.
  • the evaluation/control unit 40 may generate a voltage difference between the terminals A and B in order to provide a bias current through the GMR elements 12, 22, 32, 42.
  • the differential sensor output signal ⁇ between the terminals C and D is then subsequently picked up, and further processed, by a differential amplifier in the evaluation/control unit 40.
  • the sensor output signal ⁇ may be a differential voltage or current.
  • the excitation wires 11, 21, 31, and 41 are indicated next to the corresponding GMR elements.
  • the evaluation/control unit 40 may also provide the excitation currents through the excitation wires 11, 21, 31, and 41, wherein the corresponding connections are not completely drawn for simplicity. Moreover, only one excitation wire is shown, while in general there might be more than one in each detection unit.
  • the device is insensitive to common-mode magnetic interference.
  • the DC operating point of the device is insensitive to temperature variations of the GMR elements 12, 22, 32, 42. - Temperature variations, noise, spreading, etc. of the voltage difference between terminals A and B appear as common-mode signals across the C and D terminals, and are suppressed by the common-mode rejection of the differential amplifier inside the evaluation/control unit 40.
  • the common-mode capacitive and inductive cross-talk from the excitation wires to the bridge is also suppressed by the differential amplifier.
  • Figure 4 shows as a modification of the previous embodiment a magnetic sensor device 300, in which only a Half Wheatstone bridge is realized by one pair of a primary and a secondary detection unit P and S.
  • the evaluation/control unit 40 again provides excitation currents to the excitation wires 11 and 21. Moreover, it provides bias currents through the GMR elements 12, 22 via terminals A and B on the one hand, and terminal C on the other hand.
  • the differential output signal ⁇ is obtained at terminals A and B. It may be a differential voltage or current.
  • FIG. 5 shows as a variant of the previous embodiment a magnetic sensor device 400 comprising Half Wheatstone bridges with fewer interconnects.
  • two (of possibly many) Half Wheatstone bridges are provided which all use a common node C, e.g. substrate (ground). In this way multiple sensor units share the same terminal C, which leads to fewer interconnections to the evaluation/control unit 40.
  • the described embodiments have the advantage that the sensitive directions of all GMR elements can be the same. After micro-fabrication of a sensor device, the pinned layers of all GMR elements will have the same orientation.
  • an additional post-processing step is required if some of the pinned layers of two GMR elements shall be flipped (e.g. the layers of the GMR elements 22 and 32 in the Wheatstone bridge of Figure 3).
  • Techniques to achieve such a flipping involve the application of hard-magnetic "stamps" closely above the sensor surface and heating it up, in order to reprogram locally the directions of the pinned layers (which are copied from the stamp).
  • Another technique is based on controlled application of current pulses through the GMR elements for local heating, with simultaneous application of an external magnetic field (cf. WO 2004/109725 Al). Both techniques require additional steps in the manufacturing process that involve either precise mechanical alignment, or application of high currents and associated high voltages, which may be far above the breakdown voltage of e.g. a standard CMOS process.
  • reprogramming the pinned-layer orientation may cause generation of extra magnetic domains and can be a cause to the sensor instabilities (Barkhausen noise, Baseline Popping Noise).

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)

Abstract

L'invention concerne un dispositif capteur magnétique (100) pourvu d'unités de détection primaire et secondaire (P, S), chaque unité comprenant un élément capteur magnétique et un générateur de champs magnétiques. Dans un mode de réalisation préféré, les éléments capteurs magnétiques sont des élément à magnétorésistance géante (12, 22) présentant des sens de détection (D12, D22) identiques, et les générateurs de champs magnétiques sont des fils parallèles (11, 21) alimentés par une unité d'évaluation et de commande (40) à courants d'excitation magnétique anti-parallèles. Lesdits courants génèrent des champs d'excitation magnétique (Bn, B2i) présentant des sens de rotation opposés qui induisent à leur tour des champs de réaction magnétique à sens opposés (B'11, B'21) dans des particules magnétisées (1) dans une zone d'investigation (2). Les champs de réaction magnétique (B'11, B'21) ont donc des effets opposés sur les éléments à magnétorésistance géante, ce qui augmente la différence (Δ) entre les signaux de sortie de ces éléments. Dans un mode de réalisation préféré, quatre unités de détection sont agencées dans un pont de Wheatstone.
EP07826574A 2006-10-09 2007-09-28 Dispositif capteur magnetique pourvu d'une paire d'unites de detection Withdrawn EP2082231A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP07826574A EP2082231A2 (fr) 2006-10-09 2007-09-28 Dispositif capteur magnetique pourvu d'une paire d'unites de detection

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP06121980 2006-10-09
PCT/IB2007/053944 WO2008044162A2 (fr) 2006-10-09 2007-09-28 Dispositif capteur magnetique pourvu d'une paire d'unites de detection
EP07826574A EP2082231A2 (fr) 2006-10-09 2007-09-28 Dispositif capteur magnetique pourvu d'une paire d'unites de detection

Publications (1)

Publication Number Publication Date
EP2082231A2 true EP2082231A2 (fr) 2009-07-29

Family

ID=39283255

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07826574A Withdrawn EP2082231A2 (fr) 2006-10-09 2007-09-28 Dispositif capteur magnetique pourvu d'une paire d'unites de detection

Country Status (4)

Country Link
EP (1) EP2082231A2 (fr)
JP (1) JP2010521649A (fr)
CN (1) CN101523214A (fr)
WO (1) WO2008044162A2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011007310A1 (fr) 2009-07-17 2011-01-20 Koninklijke Philips Electronics N.V. Appareil pour l'enrichissement de particules magnétiques
EP2330432B1 (fr) 2009-11-19 2013-01-09 Nxp B.V. Capteur de champ magnétique
JP5487402B2 (ja) * 2010-08-23 2014-05-07 アルプス・グリーンデバイス株式会社 磁気平衡式電流センサ
DK2800970T3 (en) 2012-01-04 2017-01-16 Magnomics S A Monolithic device for combining CMOS with magnetoresistive sensors
JP6285641B2 (ja) * 2013-05-10 2018-02-28 旭化成エレクトロニクス株式会社 磁気センサ及び磁場成分演算方法
CN105574982B (zh) * 2016-01-12 2018-09-25 深圳粤宝电子科技有限公司 一种线圈磁芯全桥结构的读磁器
CN107796865B (zh) 2016-09-05 2021-05-25 财团法人工业技术研究院 生物分子磁传感器
CN112650406A (zh) * 2019-10-10 2021-04-13 北京小米移动软件有限公司 电子设备及电子设备保护系统
CN112345624A (zh) * 2020-10-27 2021-02-09 北京信息科技大学 一种基于巨磁阻效应的高灵敏度金属磨损颗粒检测传感器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5981297A (en) 1997-02-05 1999-11-09 The United States Of America As Represented By The Secretary Of The Navy Biosensor using magnetically-detected label
US7106051B2 (en) * 2001-12-21 2006-09-12 Koninklijke Philips Electronics, N.V. Magnetoresistive sensing device, system and method for determining a density of magnetic particles in fluid
AU2002366904A1 (en) * 2001-12-21 2003-07-09 Koninklijke Philips Electronics N.V. Sensor and method for measuring the areal density of magnetic nanoparticles on a micro-array
CN1829922B (zh) 2003-07-30 2010-06-16 皇家飞利浦电子股份有限公司 具有改进信噪比的芯片内磁性粒子传感器
JP4392429B2 (ja) * 2003-07-30 2010-01-06 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 磁気抵抗ナノ粒子センサの集積された１／ｆノイズ除去方法
EP1697755A1 (fr) 2003-07-30 2006-09-06 Koninklijke Philips Electronics N.V. Dispositif du type capteur magnetique monte sur puce et caracterise par une suppression de la diaphonie
CN1957251B (zh) * 2004-05-18 2010-11-03 皇家飞利浦电子股份有限公司 用于改善生物传感中背景上信号的磁致旋转
JP2008500548A (ja) 2004-05-24 2008-01-10 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 高感度深度プロービングのための磁気抵抗センサ
WO2006018811A1 (fr) * 2004-08-20 2006-02-23 Instituto De Engenharia De Sistemas E Computadores Para Os Microsistemas E As Nanotecnologias (Inesc-Mn) Dispositif bioelectronique
JP2009536340A (ja) * 2006-05-09 2009-10-08 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 濃度測定用のマイクロエレクトロニクスセンサデバイス
JP2009536352A (ja) * 2006-05-10 2009-10-08 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 磁気抵抗センサにおける作動のためのシステム及び方法
US8133439B2 (en) * 2006-08-01 2012-03-13 Magic Technologies, Inc. GMR biosensor with enhanced sensitivity
JP2010500547A (ja) * 2006-08-09 2010-01-07 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ マイクロチップの磁気センサー装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2008044162A2 *

Also Published As

Publication number Publication date
WO2008044162A2 (fr) 2008-04-17
JP2010521649A (ja) 2010-06-24
WO2008044162A3 (fr) 2008-07-17
CN101523214A (zh) 2009-09-02

Similar Documents

Publication Publication Date Title
Freitas et al. Spintronic sensors
EP2082231A2 (fr) Dispositif capteur magnetique pourvu d'une paire d'unites de detection
US20080246470A1 (en) Magnetic Sensor Device With Field Compensation
De Boer et al. An integrated and sensitive detection platform for magneto-resistive biosensors
US20060194327A1 (en) On-chip magnetic particle sensor with improved snr
JP6773726B2 (ja) 磁界センサー
US20080309329A1 (en) On-Chip Magnetic Sensor Device with Suppressed Cross-Talk
US20060128035A1 (en) Sensor and method for measuring the areal density of magnetic nanoparticles on a micro-array
EP1820010A2 (fr) Procede de calibrage d'une fonction de transfert d'un capteur magnetique
EP2038635A2 (fr) Dispositif détecteur magnétique et procédé permettant de détecter des particules magnétiques
JP2009535615A (ja) 磁気センサーデバイスの校正
US20100176807A1 (en) Magnetic sensor device
WO2006067747A2 (fr) Procede et dispositif permettant de caracteriser un champ magnetique applique a un capteur magnetique
JP2009508103A (ja) マイクロセンサ装置
CN101438180A (zh) 具有改进的输出信号特性的磁电阻传感器
WO2007060568A2 (fr) Dispositif de detection magnetique dote d’une chambre d’echantillonnage
JP2009536346A (ja) 磁場発生器とセンサとをもつ磁気センサ装置
US20100182002A1 (en) Magnetic sensor device with field generator and sensor element
WO2010013169A1 (fr) Dispositif de capteur magnétique avec élément de capteur conducteur
JP2007183217A (ja) 磁性体検出装置および磁性体検出方法

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20090511

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

DAX Request for extension of the european patent (deleted)
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20100401