EP2027586A4 - Ion beam apparatus and method for ion implantation - Google Patents

Ion beam apparatus and method for ion implantation

Info

Publication number
EP2027586A4
EP2027586A4 EP07796127A EP07796127A EP2027586A4 EP 2027586 A4 EP2027586 A4 EP 2027586A4 EP 07796127 A EP07796127 A EP 07796127A EP 07796127 A EP07796127 A EP 07796127A EP 2027586 A4 EP2027586 A4 EP 2027586A4
Authority
EP
European Patent Office
Prior art keywords
ion
beam apparatus
ion implantation
ion beam
implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07796127A
Other languages
German (de)
French (fr)
Other versions
EP2027586A2 (en
Inventor
Hilton F Glavish
Dale Conrad Jacobson
Thomas N Horsky
Sami K Hahto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semequip Inc
Original Assignee
Semequip Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semequip Inc filed Critical Semequip Inc
Publication of EP2027586A2 publication Critical patent/EP2027586A2/en
Publication of EP2027586A4 publication Critical patent/EP2027586A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/10—Irradiation devices with provision for relative movement of beam source and object to be irradiated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26566—Bombardment with radiation with high-energy radiation producing ion implantation of a cluster, e.g. using a gas cluster ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0455—Diaphragms with variable aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/057—Energy or mass filtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/14—Lenses magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30477—Beam diameter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry
EP07796127A 2006-06-13 2007-06-13 Ion beam apparatus and method for ion implantation Withdrawn EP2027586A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US81343106P 2006-06-13 2006-06-13
PCT/US2007/013984 WO2007146394A2 (en) 2006-06-13 2007-06-13 Ion beam apparatus and method for ion implantation

Publications (2)

Publication Number Publication Date
EP2027586A2 EP2027586A2 (en) 2009-02-25
EP2027586A4 true EP2027586A4 (en) 2010-11-24

Family

ID=38832545

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07796127A Withdrawn EP2027586A4 (en) 2006-06-13 2007-06-13 Ion beam apparatus and method for ion implantation

Country Status (7)

Country Link
US (3) US7851773B2 (en)
EP (1) EP2027586A4 (en)
JP (2) JP5258757B2 (en)
KR (3) KR20090018954A (en)
CN (1) CN101467217A (en)
TW (2) TWI416573B (en)
WO (2) WO2007146394A2 (en)

Families Citing this family (135)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI416573B (en) * 2006-06-13 2013-11-21 Semequip Inc Multipurpose ion implanter beam line configuration, ion implanter beam line, device providing an adjustable mass seletion aperture for an ion implanter beam line, and analyzer magnet for an ion implanter beam line
KR101350759B1 (en) 2006-06-30 2014-01-13 노르디코 테크니컬 서비시즈 리미티드 Apparatus for accelerating an ion beam
EP1970935B1 (en) * 2007-03-14 2011-01-12 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Lens coil cooling of a magnetic lens
JP5242937B2 (en) * 2007-04-10 2013-07-24 株式会社Ｓｅｎ Ion implantation apparatus and ion implantation method
WO2009039884A1 (en) * 2007-09-26 2009-04-02 Ion Beam Applications S.A. Particle beam transport apparatus and method of transporting a particle beam with small beam spot size
US8192805B2 (en) * 2007-09-27 2012-06-05 Tel Epion Inc. Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices
US7981483B2 (en) * 2007-09-27 2011-07-19 Tel Epion Inc. Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices
US7915597B2 (en) * 2008-03-18 2011-03-29 Axcelis Technologies, Inc. Extraction electrode system for high current ion implanter
WO2009122555A1 (en) * 2008-03-31 2009-10-08 富士通マイクロエレクトロニクス株式会社 Manufacturing method of semiconductor device, method for adjusting ion beam, and ion implantation apparatus
JP5194975B2 (en) * 2008-04-10 2013-05-08 日新イオン機器株式会社 Ion implanter
US7994488B2 (en) * 2008-04-24 2011-08-09 Axcelis Technologies, Inc. Low contamination, low energy beamline architecture for high current ion implantation
US8330118B2 (en) * 2008-05-16 2012-12-11 Semequip, Inc. Multi mode ion source
US9737733B2 (en) 2008-05-22 2017-08-22 W. Davis Lee Charged particle state determination apparatus and method of use thereof
US10092776B2 (en) 2008-05-22 2018-10-09 Susan L. Michaud Integrated translation/rotation charged particle imaging/treatment apparatus and method of use thereof
US8907309B2 (en) 2009-04-17 2014-12-09 Stephen L. Spotts Treatment delivery control system and method of operation thereof
US9579525B2 (en) 2008-05-22 2017-02-28 Vladimir Balakin Multi-axis charged particle cancer therapy method and apparatus
US9855444B2 (en) 2008-05-22 2018-01-02 Scott Penfold X-ray detector for proton transit detection apparatus and method of use thereof
US8129699B2 (en) 2008-05-22 2012-03-06 Vladimir Balakin Multi-field charged particle cancer therapy method and apparatus coordinated with patient respiration
US9737272B2 (en) 2008-05-22 2017-08-22 W. Davis Lee Charged particle cancer therapy beam state determination apparatus and method of use thereof
US10548551B2 (en) 2008-05-22 2020-02-04 W. Davis Lee Depth resolved scintillation detector array imaging apparatus and method of use thereof
US9177751B2 (en) 2008-05-22 2015-11-03 Vladimir Balakin Carbon ion beam injector apparatus and method of use thereof
US9616252B2 (en) 2008-05-22 2017-04-11 Vladimir Balakin Multi-field cancer therapy apparatus and method of use thereof
US8188688B2 (en) * 2008-05-22 2012-05-29 Vladimir Balakin Magnetic field control method and apparatus used in conjunction with a charged particle cancer therapy system
US8975600B2 (en) 2008-05-22 2015-03-10 Vladimir Balakin Treatment delivery control system and method of operation thereof
US9056199B2 (en) 2008-05-22 2015-06-16 Vladimir Balakin Charged particle treatment, rapid patient positioning apparatus and method of use thereof
US9974978B2 (en) 2008-05-22 2018-05-22 W. Davis Lee Scintillation array apparatus and method of use thereof
US10684380B2 (en) 2008-05-22 2020-06-16 W. Davis Lee Multiple scintillation detector array imaging apparatus and method of use thereof
US10070831B2 (en) 2008-05-22 2018-09-11 James P. Bennett Integrated cancer therapy—imaging apparatus and method of use thereof
US9498649B2 (en) 2008-05-22 2016-11-22 Vladimir Balakin Charged particle cancer therapy patient constraint apparatus and method of use thereof
US9744380B2 (en) 2008-05-22 2017-08-29 Susan L. Michaud Patient specific beam control assembly of a cancer therapy apparatus and method of use thereof
US9682254B2 (en) 2008-05-22 2017-06-20 Vladimir Balakin Cancer surface searing apparatus and method of use thereof
US9155911B1 (en) 2008-05-22 2015-10-13 Vladimir Balakin Ion source method and apparatus used in conjunction with a charged particle cancer therapy system
US8969834B2 (en) 2008-05-22 2015-03-03 Vladimir Balakin Charged particle therapy patient constraint apparatus and method of use thereof
US9095040B2 (en) 2008-05-22 2015-07-28 Vladimir Balakin Charged particle beam acceleration and extraction method and apparatus used in conjunction with a charged particle cancer therapy system
US9910166B2 (en) 2008-05-22 2018-03-06 Stephen L. Spotts Redundant charged particle state determination apparatus and method of use thereof
US9044600B2 (en) 2008-05-22 2015-06-02 Vladimir Balakin Proton tomography apparatus and method of operation therefor
US9168392B1 (en) 2008-05-22 2015-10-27 Vladimir Balakin Charged particle cancer therapy system X-ray apparatus and method of use thereof
US9981147B2 (en) 2008-05-22 2018-05-29 W. Davis Lee Ion beam extraction apparatus and method of use thereof
US8642978B2 (en) 2008-05-22 2014-02-04 Vladimir Balakin Charged particle cancer therapy dose distribution method and apparatus
US9937362B2 (en) 2008-05-22 2018-04-10 W. Davis Lee Dynamic energy control of a charged particle imaging/treatment apparatus and method of use thereof
US10029122B2 (en) 2008-05-22 2018-07-24 Susan L. Michaud Charged particle—patient motion control system apparatus and method of use thereof
US8718231B2 (en) 2008-05-22 2014-05-06 Vladimir Balakin X-ray tomography method and apparatus used in conjunction with a charged particle cancer therapy system
US9782140B2 (en) 2008-05-22 2017-10-10 Susan L. Michaud Hybrid charged particle / X-ray-imaging / treatment apparatus and method of use thereof
US10143854B2 (en) 2008-05-22 2018-12-04 Susan L. Michaud Dual rotation charged particle imaging / treatment apparatus and method of use thereof
US9737734B2 (en) 2008-05-22 2017-08-22 Susan L. Michaud Charged particle translation slide control apparatus and method of use thereof
EP2283509A1 (en) * 2008-05-30 2011-02-16 Axcelis Technologies, Inc. Control of particles on semiconductor wafers when implanting boron hydrides
US8124946B2 (en) * 2008-06-25 2012-02-28 Axcelis Technologies Inc. Post-decel magnetic energy filter for ion implantation systems
US8227768B2 (en) * 2008-06-25 2012-07-24 Axcelis Technologies, Inc. Low-inertia multi-axis multi-directional mechanically scanned ion implantation system
US8809800B2 (en) * 2008-08-04 2014-08-19 Varian Semicoductor Equipment Associates, Inc. Ion source and a method for in-situ cleaning thereof
US8003956B2 (en) * 2008-10-03 2011-08-23 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling beam current uniformity in an ion implanter
US8164070B2 (en) * 2008-12-05 2012-04-24 Nissin Ion Equipment Co., Ltd. Collimator magnet for ion implantation system
US8044375B2 (en) * 2009-03-18 2011-10-25 Kingstone Semiconductor Company, Limited Apparatus and method for ion beam implantation using scanning and spot beams
US8350236B2 (en) * 2010-01-12 2013-01-08 Axcelis Technologies, Inc. Aromatic molecular carbon implantation processes
US8669539B2 (en) * 2010-03-29 2014-03-11 Advanced Ion Beam Technology, Inc. Implant method and implanter by using a variable aperture
US10086214B2 (en) 2010-04-16 2018-10-02 Vladimir Balakin Integrated tomography—cancer treatment apparatus and method of use thereof
US10625097B2 (en) 2010-04-16 2020-04-21 Jillian Reno Semi-automated cancer therapy treatment apparatus and method of use thereof
US10638988B2 (en) 2010-04-16 2020-05-05 Scott Penfold Simultaneous/single patient position X-ray and proton imaging apparatus and method of use thereof
US10556126B2 (en) 2010-04-16 2020-02-11 Mark R. Amato Automated radiation treatment plan development apparatus and method of use thereof
US9737731B2 (en) 2010-04-16 2017-08-22 Vladimir Balakin Synchrotron energy control apparatus and method of use thereof
US10555710B2 (en) 2010-04-16 2020-02-11 James P. Bennett Simultaneous multi-axes imaging apparatus and method of use thereof
US10376717B2 (en) 2010-04-16 2019-08-13 James P. Bennett Intervening object compensating automated radiation treatment plan development apparatus and method of use thereof
US10188877B2 (en) 2010-04-16 2019-01-29 W. Davis Lee Fiducial marker/cancer imaging and treatment apparatus and method of use thereof
US10518109B2 (en) 2010-04-16 2019-12-31 Jillian Reno Transformable charged particle beam path cancer therapy apparatus and method of use thereof
US11648420B2 (en) 2010-04-16 2023-05-16 Vladimir Balakin Imaging assisted integrated tomography—cancer treatment apparatus and method of use thereof
US10751551B2 (en) 2010-04-16 2020-08-25 James P. Bennett Integrated imaging-cancer treatment apparatus and method of use thereof
US10589128B2 (en) 2010-04-16 2020-03-17 Susan L. Michaud Treatment beam path verification in a cancer therapy apparatus and method of use thereof
US10349906B2 (en) 2010-04-16 2019-07-16 James P. Bennett Multiplexed proton tomography imaging apparatus and method of use thereof
US10179250B2 (en) 2010-04-16 2019-01-15 Nick Ruebel Auto-updated and implemented radiation treatment plan apparatus and method of use thereof
US9693443B2 (en) 2010-04-19 2017-06-27 General Electric Company Self-shielding target for isotope production systems
US8344337B2 (en) * 2010-04-21 2013-01-01 Axcelis Technologies, Inc. Silaborane implantation processes
GB2488429B (en) * 2011-02-28 2016-09-28 Agilent Technologies Inc Ion slicer with acceleration and deceleration optics
US8525106B2 (en) * 2011-05-09 2013-09-03 Bruker Daltonics, Inc. Method and apparatus for transmitting ions in a mass spectrometer maintained in a sub-atmospheric pressure regime
JP5673811B2 (en) * 2011-05-13 2015-02-18 株式会社Sumco Manufacturing method of semiconductor epitaxial wafer, semiconductor epitaxial wafer, and manufacturing method of solid-state imaging device
US8963112B1 (en) 2011-05-25 2015-02-24 Vladimir Balakin Charged particle cancer therapy patient positioning method and apparatus
WO2013068796A2 (en) * 2011-11-09 2013-05-16 Brookhaven Science Associates, Llc Molecular ion source for ion implantation
JP5404950B1 (en) * 2012-07-18 2014-02-05 ラボテック株式会社 Deposition apparatus and deposition method
US9484176B2 (en) * 2012-09-10 2016-11-01 Thomas Schenkel Advanced penning ion source
JP6278591B2 (en) * 2012-11-13 2018-02-14 株式会社Sumco Manufacturing method of semiconductor epitaxial wafer, semiconductor epitaxial wafer, and manufacturing method of solid-state imaging device
JP6280301B2 (en) * 2012-11-13 2018-02-14 株式会社Sumco Epitaxial silicon wafer manufacturing method, epitaxial silicon wafer, and solid-state imaging device manufacturing method
JP5799935B2 (en) * 2012-11-13 2015-10-28 株式会社Sumco Manufacturing method of semiconductor epitaxial wafer, semiconductor epitaxial wafer, and manufacturing method of solid-state imaging device
JP6289805B2 (en) * 2012-11-13 2018-03-07 株式会社Sumco Manufacturing method of semiconductor epitaxial wafer, semiconductor epitaxial wafer, and manufacturing method of solid-state imaging device
JP6229258B2 (en) * 2012-11-13 2017-11-15 株式会社Sumco Bonded wafer manufacturing method and bonded wafer
JP5776670B2 (en) * 2012-11-13 2015-09-09 株式会社Sumco Epitaxial silicon wafer manufacturing method, epitaxial silicon wafer, and solid-state imaging device manufacturing method
JP5776669B2 (en) * 2012-11-13 2015-09-09 株式会社Sumco Epitaxial silicon wafer manufacturing method, epitaxial silicon wafer, and solid-state imaging device manufacturing method
JP5799936B2 (en) * 2012-11-13 2015-10-28 株式会社Sumco Manufacturing method of semiconductor epitaxial wafer, semiconductor epitaxial wafer, and manufacturing method of solid-state imaging device
JP6107068B2 (en) * 2012-11-13 2017-04-05 株式会社Sumco Epitaxial silicon wafer manufacturing method, epitaxial silicon wafer, and solid-state imaging device manufacturing method
US8933651B2 (en) 2012-11-16 2015-01-13 Vladimir Balakin Charged particle accelerator magnet apparatus and method of use thereof
US9267982B2 (en) * 2013-02-11 2016-02-23 Taiwan Semiconductor Manufacturing Company, Ltd. Processing apparatus and ion implantation apparatus
US9502213B2 (en) 2013-03-15 2016-11-22 Nissin Ion Equipment Co., Ltd. Ion beam line
US8994272B2 (en) 2013-03-15 2015-03-31 Nissin Ion Equipment Co., Ltd. Ion source having at least one electron gun comprising a gas inlet and a plasma region defined by an anode and a ground element thereof
US9142386B2 (en) 2013-03-15 2015-09-22 Nissin Ion Equipment Co., Ltd. Ion beam line
US9275819B2 (en) * 2013-03-15 2016-03-01 Nissin Ion Equipment Co., Ltd. Magnetic field sources for an ion source
US9865422B2 (en) 2013-03-15 2018-01-09 Nissin Ion Equipment Co., Ltd. Plasma generator with at least one non-metallic component
US9437397B2 (en) * 2013-06-27 2016-09-06 Varian Semiconductor Equipment Associates, Inc. Textured silicon liners in substrate processing systems
US8884244B1 (en) * 2013-10-22 2014-11-11 Varian Semiconductor Equipment Associates, Inc. Dual mode ion implanter
JP6253375B2 (en) * 2013-12-02 2017-12-27 住友重機械イオンテクノロジー株式会社 Ion implanter
TWI626675B (en) * 2014-03-05 2018-06-11 聯華電子股份有限公司 Mass slit module, ion implanter, operating method for the same
JP6324223B2 (en) * 2014-06-09 2018-05-16 住友重機械イオンテクノロジー株式会社 Ion implantation apparatus and ion implantation method
US9443708B2 (en) 2014-09-10 2016-09-13 Battelle Memorial Institute Ion implantation system and process for ultrasensitive determination of target isotopes
CN104409313B (en) * 2014-12-22 2016-08-17 北京中科信电子装备有限公司 A kind of mass of ion analytical equipment
TWI686838B (en) 2014-12-26 2020-03-01 美商艾克塞利斯科技公司 System and method to improve productivity of hybrid scan ion beam implanters
US9396903B1 (en) * 2015-02-06 2016-07-19 Varian Semiconductor Equipment Associates, Inc. Apparatus and method to control ion beam current
US9583308B1 (en) * 2015-08-27 2017-02-28 Varian Semiconductor Equipment Associates, Inc. Light bath for particle suppression
US9793087B2 (en) * 2015-09-10 2017-10-17 Varian Semiconductor Equipment Associates, Inc. Techniques and apparatus for manipulating an ion beam
US9697988B2 (en) * 2015-10-14 2017-07-04 Advanced Ion Beam Technology, Inc. Ion implantation system and process
DE102015118443A1 (en) * 2015-10-28 2017-05-04 Eugen Forschner Gmbh Device for connecting electrical components to a power supply
US9907981B2 (en) 2016-03-07 2018-03-06 Susan L. Michaud Charged particle translation slide control apparatus and method of use thereof
US10468241B2 (en) * 2016-04-04 2019-11-05 West Virginia University Monolithic collimator and energy analyzer for ion spectrometry
US10037863B2 (en) 2016-05-27 2018-07-31 Mark R. Amato Continuous ion beam kinetic energy dissipater apparatus and method of use thereof
JP7271425B2 (en) 2016-09-09 2023-05-11 ボード オブ リージェンツ，ザ ユニバーシティ オブ テキサス システム Apparatus and method for magnetic control of illuminating electron beam
US11017974B2 (en) * 2016-11-11 2021-05-25 Nissin Ion Equipment Co., Ltd. Ion source
EP3364421B1 (en) * 2017-02-17 2019-04-03 Rigaku Corporation X-ray optical device
JP2017123477A (en) * 2017-02-28 2017-07-13 株式会社Sumco Method for manufacturing semiconductor epitaxial wafer, semiconductor epitaxial wafer, and method for manufacturing solid-state imaging device
US10147584B2 (en) * 2017-03-20 2018-12-04 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for decelerated ion beam with no energy contamination
JP6928943B2 (en) * 2017-03-28 2021-09-01 株式会社日立ハイテクサイエンス Charged particle beam device
JP6265291B2 (en) * 2017-03-28 2018-01-24 株式会社Sumco Bonded wafer manufacturing method and bonded wafer
JP2017175145A (en) * 2017-05-01 2017-09-28 株式会社Sumco Semiconductor epitaxial wafer manufacturing method, semiconductor epitaxial wafer, and solid-state imaging element manufacturing method
WO2019005288A1 (en) * 2017-06-27 2019-01-03 Vandermeulen Peter F Methods and systems for plasma deposition and treatment
US10037877B1 (en) * 2017-06-29 2018-07-31 Axcelis Technologies, Inc Ion implantation system having beam angle control in drift and deceleration modes
US10580616B2 (en) * 2017-10-09 2020-03-03 Axcelis Technologies, Inc. System and method for in-situ beamline film stabilization or removal in the AEF region
WO2019167857A1 (en) * 2018-03-02 2019-09-06 株式会社村田製作所 All-solid battery and manufacturing method therefor
US11164722B2 (en) * 2018-07-31 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Ion implantation method
CN109148248B (en) * 2018-08-13 2020-10-16 江苏未名华芯半导体有限公司 Ion implantation equipment for chip production
US11114270B2 (en) * 2018-08-21 2021-09-07 Axcelis Technologies, Inc. Scanning magnet design with enhanced efficiency
US10651011B2 (en) * 2018-08-21 2020-05-12 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for generating bunched ion beam
US10468226B1 (en) * 2018-09-21 2019-11-05 Varian Semiconductor Equipment Associates, Inc. Extraction apparatus and system for high throughput ion beam processing
JP6813048B2 (en) * 2019-03-27 2021-01-13 日新イオン機器株式会社 Mass spectrometer
US11011343B2 (en) * 2019-07-15 2021-05-18 Applied Materials, Inc. High-current ion implanter and method for controlling ion beam using high-current ion implanter
JP7106698B2 (en) * 2020-04-07 2022-07-26 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド Apparatus and technique for generating bunched ion beams
US11476087B2 (en) * 2020-08-03 2022-10-18 Applied Materials, Inc. Ion implantation system and linear accelerator having novel accelerator stage configuration
US11217427B1 (en) * 2020-11-27 2022-01-04 Applied Materials, Inc. System, apparatus and method for bunched ribbon ion beam
US11818830B2 (en) * 2021-01-29 2023-11-14 Applied Materials, Inc. RF quadrupole particle accelerator
US11569063B2 (en) 2021-04-02 2023-01-31 Applied Materials, Inc. Apparatus, system and method for energy spread ion beam
US20230343727A1 (en) * 2022-04-23 2023-10-26 Plasma-Therm Nes Llc Electrostatic discharge prevention in ion beam system
US20240098871A1 (en) * 2022-09-21 2024-03-21 Applied Materials, Inc. Drift tube electrode arrangement having direct current optics

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4800100A (en) * 1987-10-27 1989-01-24 Massachusetts Institute Of Technology Combined ion and molecular beam apparatus and method for depositing materials
WO2002043803A1 (en) * 2000-11-30 2002-06-06 Semequip, Inc. Ion implantation system and control method
EP1538655A2 (en) * 1999-12-13 2005-06-08 Semequip, Inc. Ion implantation ion source

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5311028A (en) * 1990-08-29 1994-05-10 Nissin Electric Co., Ltd. System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions
NL9101083A (en) * 1991-06-24 1993-01-18 Procornea Holding Bv HOLDER FOR STORING A CONTACT LENS.
US5350926A (en) 1993-03-11 1994-09-27 Diamond Semiconductor Group, Inc. Compact high current broad beam ion implanter
JP3358336B2 (en) * 1994-10-14 2002-12-16 日新電機株式会社 Method for detecting abnormal implantation conditions in ion implantation system
US5629528A (en) * 1996-01-16 1997-05-13 Varian Associates, Inc. Charged particle beam system having beam-defining slit formed by rotating cyclinders
US5814819A (en) 1997-07-11 1998-09-29 Eaton Corporation System and method for neutralizing an ion beam using water vapor
US20020003208A1 (en) 1997-12-01 2002-01-10 Vadim G. Dudnikov Space charge neutralization of an ion beam
US6130436A (en) * 1998-06-02 2000-10-10 Varian Semiconductor Equipment Associates, Inc. Acceleration and analysis architecture for ion implanter
GB2355337B (en) * 1999-10-12 2004-04-14 Applied Materials Inc Ion implanter and beam stop therefor
US6403967B1 (en) * 1999-10-15 2002-06-11 Advanced Ion Beam Technology, Inc. Magnet system for an ion beam implantation system using high perveance beams
US7838842B2 (en) * 1999-12-13 2010-11-23 Semequip, Inc. Dual mode ion source for ion implantation
EP2426693A3 (en) * 1999-12-13 2013-01-16 Semequip, Inc. Ion source
US6703628B2 (en) * 2000-07-25 2004-03-09 Axceliss Technologies, Inc Method and system for ion beam containment in an ion beam guide
JP4252237B2 (en) * 2000-12-06 2009-04-08 株式会社アルバック Ion implantation apparatus and ion implantation method
US6791097B2 (en) 2001-01-18 2004-09-14 Varian Semiconductor Equipment Associates, Inc. Adjustable conductance limiting aperture for ion implanters
JP3840108B2 (en) 2001-12-27 2006-11-01 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー Ion beam processing method and processing apparatus
KR100797138B1 (en) * 2002-06-26 2008-01-22 세미이큅, 인코포레이티드 Complementary metal oxide semiconductor device, and method for forming a metal oxide semiconductor device and a complementary metal oxide semiconductor device
US6774378B1 (en) * 2003-10-08 2004-08-10 Axcelis Technologies, Inc. Method of tuning electrostatic quadrupole electrodes of an ion beam implanter
US7087913B2 (en) * 2003-10-17 2006-08-08 Applied Materials, Inc. Ion implanter electrodes
US7112789B2 (en) 2004-05-18 2006-09-26 White Nicholas R High aspect ratio, high mass resolution analyzer magnet and system for ribbon ion beams
TWI416573B (en) * 2006-06-13 2013-11-21 Semequip Inc Multipurpose ion implanter beam line configuration, ion implanter beam line, device providing an adjustable mass seletion aperture for an ion implanter beam line, and analyzer magnet for an ion implanter beam line

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4800100A (en) * 1987-10-27 1989-01-24 Massachusetts Institute Of Technology Combined ion and molecular beam apparatus and method for depositing materials
EP1538655A2 (en) * 1999-12-13 2005-06-08 Semequip, Inc. Ion implantation ion source
WO2002043803A1 (en) * 2000-11-30 2002-06-06 Semequip, Inc. Ion implantation system and control method

Also Published As

Publication number Publication date
CN101467217A (en) 2009-06-24
JP5258757B2 (en) 2013-08-07
US20110089321A1 (en) 2011-04-21
KR20140018392A (en) 2014-02-12
TW200826138A (en) 2008-06-16
US8110820B2 (en) 2012-02-07
US8436326B2 (en) 2013-05-07
US20090206270A1 (en) 2009-08-20
JP5210304B2 (en) 2013-06-12
WO2007146395A3 (en) 2008-04-10
JP2009540531A (en) 2009-11-19
EP2027586A2 (en) 2009-02-25
WO2007146394A3 (en) 2008-07-31
WO2007146394A2 (en) 2007-12-21
KR20090018954A (en) 2009-02-24
TW200816255A (en) 2008-04-01
KR20090029209A (en) 2009-03-20
US7851773B2 (en) 2010-12-14
JP2009540532A (en) 2009-11-19
US20090261248A1 (en) 2009-10-22
TWI416572B (en) 2013-11-21
TWI416573B (en) 2013-11-21
WO2007146395A2 (en) 2007-12-21

Similar Documents

Publication Publication Date Title
EP2027586A4 (en) Ion beam apparatus and method for ion implantation
TWI366857B (en) Ion implant apparatus
EP1965712A4 (en) Apparatus and method for introducing implants
EP2051660A4 (en) Apparatus and methods for inserting an implant
EP2027601A4 (en) Method and apparatus for extracting ions from an ion source for use in ion implantation
PL1971855T3 (en) Ion selection apparatus and method
GB0511386D0 (en) Method for introducing ions into an ion trap and an ion storage apparatus
GB0625775D0 (en) Focusing apparatus and method
EP2189185A4 (en) Particle beam projection apparatus and particle beam projection method
GB0820346D0 (en) Method and apparatus for laser processing
EP1750884A4 (en) Ion generation method and apparatus
EP2065120A4 (en) Laser processing method and laser processing apparatus
EP1907981A4 (en) Method and system for evaluating delivered dose
EP1948517A4 (en) Method and apparatus for sterilization
HK1152996A1 (en) Exposure apparatus, exposure method and method for making assembly
EP2064916A4 (en) Methods and apparatus for treating tinnitus
EP2180970A4 (en) Laser processing apparatus and method using beam split
EP2098040A4 (en) System and method for tcp high availability
EP1929730A4 (en) Method and apparatus for instant messaging
HK1122268A1 (en) Ion concentration regulation method and ion concentration regulation apparatus
EP2011599A4 (en) Laser processing method and laser processing apparatus
EP2102685A4 (en) Method and apparatus for tissue equivalent solid state microdosimetry
EP1851525A4 (en) Method and apparatus for tissue processing
TWI350701B (en) Method and apparatus for adjusting saturation level
GB2439796B (en) Beam processing system and beam processing method

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20081212

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR MK RS

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20101026

17Q First examination report despatched

Effective date: 20120110

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Effective date: 20140326