EP2021525A2 - Gas manifolds for use during epitaxial film formation - Google Patents

Gas manifolds for use during epitaxial film formation

Info

Publication number
EP2021525A2
EP2021525A2 EP07754972A EP07754972A EP2021525A2 EP 2021525 A2 EP2021525 A2 EP 2021525A2 EP 07754972 A EP07754972 A EP 07754972A EP 07754972 A EP07754972 A EP 07754972A EP 2021525 A2 EP2021525 A2 EP 2021525A2
Authority
EP
European Patent Office
Prior art keywords
chamber
epitaxial
deposition
etchant
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07754972A
Other languages
German (de)
French (fr)
Inventor
David Ishikawa
Craig R. Metzner
Ali Zojaji
Yihwan Kim
Arkadii V. Samoilov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of EP2021525A2 publication Critical patent/EP2021525A2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/12—Etching in gas atmosphere or plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Definitions

  • the present invention relates generally to semiconductor device manufacturing, and more particularly to gas mani-folds for use during epitaxial film formation.
  • a conventional selective epitaxy process involves a deposition reaction and an etch reaction.
  • the deposition and etch reactions occur concurrently with relatively different reaction rates to an epitaxial layer and to a polycrystalline layer.
  • the epitaxial layer is formed on a monocrystalline surface while a polycrystalline layer is deposited on at least a second layer, si ⁇ ch as an existing polycrystalline layer and/or an amorphous layer.
  • the deposited polycrystalline layer is generally etched at a faster rate than the epitaxial layer. Therefore, by changing the concentration of an etchant gas, the net selective process results in deposition of epitaxy material and limited, or no, deposition of polycrystalline material.
  • a selective epitaxy process may result in the formation of an epilayer of silicon-containing material on a monocrystalline silicon surface while no deposition is left on the spacer.
  • Selective epitaxy processes generally have some drawbacks . In order to maintain selectivity during such epitaxy processes, chemical concentrations of the precursors, as well as reaction temperatures must be regulated and adjusted throughout the deposition process. If not enough silicon precursor is administered, then the etching reaction may dominate and the overall process is slowed down. Also, harmful over etching of substrate features may occur. If not enough etchant precursor is administered, then the deposition reaction may dominate reducing the selectivity to form monocrystalline and polycryst-alline materials across the substrate surface. Also, conventional selective epitaxy processes usually require a high reaction temperature, such as about 800 0 C, 1,000 0 C or higher. Such high temperatures are not desirable during a fabrication process due to thermal budget considerations and possible uncontrolled nitridation reactions to the substrate surface.
  • the present invention provides an epitaxial film formation system that includes an epitaxial chamber adapted to form an epitaxial layer on a substrate; a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber; and an etchant gas manifold separate from the deposition gas manifold and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber-.
  • the present invention provides a method of forming an epitaxial film that includes supplying at least one deposition gas and a carrier gas to an epitaxial " chamber from a deposition gas manifold; and supplying at least one etchant gas and a carrier gas to the epitaxial chamber from an etchant gas manifold separate from the deposition gas manifold.
  • the present invention provides an apparatus for use in forming an epitaxial film that includes a mixing junction coupled to an epitaxial chamber adapted to form an epitaxial layer on a substrate, a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber, and an etchant gas manifold, separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber.
  • the present invention provides an apparatus for use in forming an epitaxial film that includes a mixing chamber coupled to an epitaxial chamber adapted to form an epitaxial layer on a substrate, a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber, and an etchant gas manifold, separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber.
  • FIG. 1 is a schematic drawing of a first exemplary epitaxial film formation system in accordance with an embodiment of the present invention.
  • FIG. 2 is a schematic drawing of a second exemplary epitaxial film formation system in accordance with an embodiment of the present invention.
  • FIG. 3 is a schematic drawing of a third exemplary epitaxial film formation system in accordance with an embodiment of the present invention.
  • FIG. 4 is a schematic drawing of a fourth exemplary epitaxial film formation system in accordance with an embodiment of the present invention.
  • AGS alternating gas supply
  • AGS systems it may be desirable to have a separate etchant and deposition manifold so that deposition and etch gases are immediately available to an epitaxial chamber when switching from deposition to etch and vice versa.
  • the present invention provides methods .and apparatus for employing separate etchant and deposition manifolds.
  • FIG. 1 is a schematic drawing of a first exemplary epitaxial film formation system 100 (hereinafter ⁇ first Epi system 100' ) in accordance with an embodiment of the present invention.
  • the first Epi system 100 may include an epitaxial chamber 101 coupled to (1) a deposition manifold 103 via a chamber valve system 105 and a deposition gas line 107; and (2) an etchant manifold 109 via the chamber valve system 105 and an etchant gas line 111.
  • the chamber valve system 105, the deposition gas line 107 and the etchant gas line 111 are coupled at a mixing junction -113 (e.g., a t-junction or similar connection) .
  • a mixing junction -113 e.g., a t-junction or similar connection
  • the epitaxial chamber 101 may comprise any conventional epitaxial chamber adapted for forming epitaxial films on one or more substrates.
  • An exemplary epitaxial chamber may be found in the Epi Centura® system and the Poly Gen® system available from Applied Materials, Inc., located in Santa Clara, California, although other epitaxial chambers and/or systems may be used.
  • the deposition manifold 103 may include flow controllers 115a-d (e.g., mass flow controllers (MFC) , volume flow controllers (VFC) , valves, etc. ) .
  • the flow controllers 115a-d may be coupled to gas sources 117a-d (e.g., gas bottles and/or facility lines, etc.) via a first set of gas lines 119a-d.
  • the flow controllers 115a-d may also be coupled to the deposition gas line 107 'via a second set of gas lines 121a-d.
  • the gas lines 119a-d, 121a-d and the deposition gas line 107 may comprise stainless steel tubing or other suitable tubing/piping (e.g., AISI 316L, etc.).
  • the deposition manifold .103 may include four flow controllers 115a-d coupled to four gas sources 117a-d. However, there may be more or less than four flow controllers 115a-d. In addition, there may be more or less than four gas sources 117a-d coupled to the flow controllers 115a-d.
  • a source of a gas e.g., N2, silane, HCl, etc.
  • the flow controllers 115a-d may be joined with the gas lines 119a-d and 121a-d by employing compressible gaskets, for example, although any suitable connection devices may be employed.
  • the flow controllers 115a-d may be the same or different from each other. Additionally, the flow controllers 115a-d may control flow based on mass, volume, time (e.g., turning on and off a pneumatic valve based on time) , etc.
  • FIG. 1 depicts the gas sources 117a-d as being disposed external to the deposition manifold 103.
  • the gas sources 117a-d may be included in the deposition manifold -103.
  • the gas sources 117a-d (e.g., gas bottles, etc. ) may be disposed in a sub-fab or other such location outside a semiconductor device manufacturing clean room or chase.
  • the gas sources 117a-d may be disposed near or within a cluster tool in the semiconductor device fabrication clean room and/or chase.
  • the gas sources 117a-d may be provided by facilities of a semiconductor device fabrication plant. Chemical compounds housed and/or carried by the gas sources 117a-d may be in gaseous, liquid and/or solid form and may subsequently be evaporated into a gaseous form for use in the epitaxial chamber 101 to form an epitaxial film.
  • the etchant manifold 109 may include flow controllers 123a-d (e.g., mass flow controllers (MFC) , volume flow controllers (VFC) , valves, etc. ) .
  • the flow controllers 123a-b may be coupled to gas sources 125a-b (e.g., gas bottles, facility lines, etc.) via a first set of gas lines 127a-b.
  • the flow controllers 123a- b may also be coupled to the etchant gas line 111 via a second set of gas lines 129a-b.
  • the gas lines 127a-b and 129a-b and the etchant gas line 111 may comprise stainless steel tubing or other suitable tubing/piping ⁇ e.g., AISI 316L, etc. ) .
  • the etchant manifold 109 may include two flow controllers 123a-b coupled to two gas sources 127a-b. However, there may be more or less than two flow controllers 123a-b. In addition, there may be more or less than two gas sources 125a-b coupled to the flow controllers 123a-b.
  • a source of a gas e.g., N2, HCl, .C12, etc.
  • the flow controllers 123a-b may be joined with the gas lines 127a-b and 129a-b by employing compressible gaskets, for example, although any suitable connection devices may be employed. Additionally, the flow controllers 123a-b may be the same or different from each other. The flow controllers 123a-b may control flow based on mass, volume, time (e.g., turning on and off a pneumatic valve based on time) , etc.
  • FIG. 1 depicts the gas sources 125a-b as being disposed external to the etchant manifold 109.
  • the gas sources 125a-b may be included in the etchant manifold 109.
  • the gas sources 125a-b e.g., gas bottles, etc.
  • the gas sources 125a-b may be disposed in a sub-fab or other such location outside a semiconductor device manufacturing clean room or chase.
  • the gas sources 125a-b may be disposed near or within a cluster tool in the semiconductor device fabrication clean room and/or chase.
  • the gas sources 125a-b may be provided by facili-ties of a semiconductor device fabrication plant.
  • Chemical compounds housed and/or carried by the gas sources 125a-b may be in gaseous, liquid and/or solid form and may subsequently be evaporate.d into a gaseous form for use in the epitaxial chamber 101 to form an epitaxial film.
  • the chamber valve system 105 may include an outer chamber flow controller 131 and an inner chamber flow controller 133.
  • the outer chamber flow controller 131 may be coupled to an outer region O of the epitaxial chamber 101 via outer chamber gas lines 135a-b (e.g. stainless steel or similar piping/tubing) .
  • the inner chamber flow controller 133 may be coupled to an inner region I of the epitaxial chamber 101 by an inner chamber gas line 137 (e.g., stainless steel or similar piping/tubing) .
  • inner chamber gas line 137 e.g., stainless steel or similar piping/tubing
  • the outer chamber flow controller 131 and inner chamber flow controller 133 may be joined with the mixing junction 113 using welding or any other suitable method.
  • the outer chamber flow controller 131 and inner chamber flow controller 133 may be MFCs, volume flow controllers, valves (e.g. pneumatic), etc.
  • the outer chamber flow controller 131 may also be joined with the gas lines 135a-b using welding or other suitable methods.
  • the mixing junction 113 may be a conventional t- junction to which the gas lines 107 and 111 may be joined.
  • the mixing junction 113 may also include other geometries.
  • a y- junction may be employed, as may differing and/or variable dimensions of the portion of a junction that mixes the gases.
  • the junction may be an x-junction in which different branches may be respectively coupled to the outer chamber flow controller 131, inner chamber flow controller 133, deposition gas line 107 and etchant gas line 111.
  • selection of a particular geometry and/or volume arrangement may improve the uniformity of the mixture of the gases in the mixing junction 113.
  • carrier gas e.g., N2, H2, etc.
  • carrier gas may be continuously flowed from both the deposition manifold 103 and the etchant manifold 109 during deposition and etching to avoid flow spikes due to turning the carrier gas on/off.
  • the carrier gas flow rate may be much larger than the etchant/source flow rates (e.g., about 10-20 slm for.
  • a carrier gas versus about 1 slm or less for etchant/deposition gasses in at least one embodiment a carrier gas flow rate of about 10 slm is continuously flowed from each of the deposition manifold 103 and the etchant manifold 109, although other flow rates may be used.
  • FIG. 2 is a schematic drawing of a second exemplary, epitaxial film formation system 200 (hereinafter second Epi system 200' ) in accordance with an embodiment of the present invention.
  • the second Epi system 200 of FIG. 2 is similar to the first epi system 100 of FIG. 1, but employs a mixing chamber 201 in place of the mixing junction 113 of the first Epi system 100 of FIG. 1.
  • the chamber valve system 105, the deposition gas line 107 and the etchant gas line 111 are coupled to the mixing chamber 2.01.
  • the mixing chamber 201 may be any chamber shape/size that improves gas mixing prior to entry into the epitaxial chamber 101.
  • the mixing chamber 201 may be cylindrical, cubical, spherical or the like.
  • the second Epi system 200 operates similarly to the first Epi system 100 of FIG. 1. However, because of the mixing chamber 201, improved mixing of gases occurs prior to entry of the gases into the epitaxial chamber 101. In some embodiments, such improved gas mixing may improve epitaxial film surface morphology (e.g., by more uniformly mixing carrier gas and etchant and/or deposition gases prior to entry into the epitaxial chamber 101) .
  • FIG. 3 is a schematic drawing of a third exemplary epitaxial film formation system 300 (hereinafter ⁇ third Epi system 300' ) in accordance with an embodiment of the present invention.
  • the third Epi system 300 of FIG. 3 is similar to the first epi system 100 of FIG. 1, but replaces the chamber valve system 105 with a deposition valve system 301 and an etchant valve system 303.
  • the deposition valve -system 301 has an outer chamber flow controller 305, and an inner chamber flow controller 307.
  • the etchant valve system 303 includes an outer chamber flow controller 309, and an inner chamber flow controller 311.
  • the third Epi system 300 may also replace the mixing junction 113 of FIG. 1 with an outer chamber mixing junction 313 and an inner chamber mixing junction 315.
  • Both the outer chamber flow controller 305 of the deposition valve system 301 and the outer chamber flow controller 309 of the etchant valve system 303 are coupled to the outer chamber mixing junction 313.
  • Both the inner chamber flow controller 307 of the deposition valve system 301 and the inner chamber flow controller 311 of the etchant valve system 303 are coupled to the inner chamber mixing junction 315.
  • the deposition gas line 107 is coupled to the outer chamber flow controller 305 and the inner chamber flow controller 307 of the deposition valve system 301.
  • the etchant gas line 111 is coupled to the outer chamber flow controller 309 and the inner chamber flow controller 311 of the etchant valve system 303.
  • the flow controllers 305, 307, 309 and 311 may be MFCs, volume flow controllers, valves [e.g. pneumatic), or any other suitable flow controllers.
  • the third Epi system 300 operates similarly to the first Epi system 100 of FIG. 1. However, placement of the mixing junctions 313, 315 closer to the epitaxial chamber 101 (relative to the mixing junction 313 of FIG. 1) may improve gas mixing in some embodiments.
  • the flow controllers 305, 307, 309 and 311 are each set to a desired position/flow rate and are kept open during film formation (e.g., to avoid delays and/or spikes) . For example, only the flow controllers 115a-d and/or 123a-b need be opened and closed.
  • FIG. 4 is a schematic drawing of a fourth exemplary epitaxial film formation system 400 (hereinafter 'fourth Epi system 400') in accordance with an embodiment of the present invention.
  • the fourth Epi system 400 of FIG. 4 is similar to the third epi system 300 of FIG. 3, but replaces the outer chamber mixing junction 313 with an outer mixing chamber 401 and the inner chamber mixing junction 315 with an inner mixing chamber 403.
  • the outer chamber flow controller 305 of the deposition valve system 301 and the outer chamber flow controller 309 of the etchant valve system 303 are coupled to the outer mixing chamber 401.
  • the inner chamber flow controller 307 of the deposition valve system 301 and the inner chamber flow controller- 311 of the etchant valve system 303 are coupled to the inner mixing chamber 403.
  • the mixing chambers 401, 403 may be any chamber shape/size that improves gas mixing prior to entry into the epitaxial chamber 101.
  • the mixing chambers 401, 403 may be cylindrical, cubical, spherical or the like.
  • the fourth Epi system 400 operates similarly to the third Epi system 300 of FIG. 3. However, because of the mixing chambers 401, 403, improved mixing of gases occurs prior to entry of the gases into the epitaxial chamber 101. In some embodiments, such improved gas mixing may improve epitaxial ' film surface morphology (e.g., by more uniformly mixing carrier gas and etchant and/or deposition gases prior to entry into the epitaxial chamber 101) .
  • deposition manifold 103 and etchant manifold 109 are shown on opposite sides of the epitaxial chamber 101, it will be understood that the deposition manifold 103 and etchant manifold 109 may be on the same side of the epitaxial chamber 101 or in any other suitable location ⁇ e.g., while remaining separate manifolds) .
  • deposition manifold 103 and etchant manifold 109 may be part of an overall gas manifold that employs a separate etchant line to deliver etchants to a processing chamber ⁇ independently of the line used to deliver deposition species) as described above in FIGS. 1-4.
  • injection of etchant occurs through an independent fluid supply line, without mixing with other gases in a gas panel (e.g., source gases, deposition gases, etc.).
  • injection of etchant may occur through an independent line with a flow control device.
  • injection of etchant may occur through an independent line with a flow control device, with the line split near a processing chamber (e.g., an epitaxial film formation chamber) to divide the etchant between injection zones of the chamber, in order to achieve desired uniformity of etching.
  • a flow divider or a valve may be used on each of the splits.
  • injection of etchant may occur through an independent line, without mixing with other gases in ,a gas panel, with a mixer near the processing chamber (e.g., an epitaxial film formation chamber).
  • injection of etchant may occur, with a separate line from the gas panel to the processing chamber for each of the injection zones of the chamber.
  • injection of etchant may occur, with a separate line from the gas panel to the processing chamber for each of the injection zones of the chamber, with a mixer near the processing chamber.
  • injection of etchant may occur, with a separate line from the gas panel to the processing chamber, with only a carrier gas, such as N2, He, Ar, etc., connected to the etchant line at the gas panel.
  • injection of etchant may occur, in which the mixing of the etchant with other active chemicals (e.g., liquids) required for the process takes place at a point where the pressure in the line does not exceed the chamber pressure by about 20 Torr .
  • active chemicals e.g., liquids
  • C12 may be employed for epitaxial film formation, cleaning, and/or etching Si- containing materials (preferably at a chamber pressure of about 1 Torr or above) .
  • injection of etchant may occur, where the etchant is mixed with other gases/liquids such as Si precursors, dopant gases, etc., in a gas panel for deposition, cleaning, and/or etching of Si-containing materials (preferably at chamber pressure of about 1 Torr or above) .
  • a thermal processing chamber may be provided for using an etchant (e.g., C12) for deposition, cleaning, and/or etching of Si-containing materials (preferably at a chamber pressure of about 1 Torr or above) .
  • a tool comprising a gas panel, a processing chamber, and delivery lines connected to the processing chamber from the gas panel may use an etchant (e.g., C12) for deposition, cleaning, and/or etching of Si-containing materials, preferably at a chamber pressure of about 1 Torr or above.
  • an etchant e.g., C12
  • injection of etchant may occur, where the etchant is mixed with the rest of the liquids (such as Si precursors, dopant gases, etc.) in the gas panel.
  • injection of etchant may occur through an independent line with a flow control device, with the line split near the chamber to divide the etchant between injection zones of the chamber, upstream from the metering valves . The same metering valves may be used to vary distribution of the etchant and the rest of the processing gases between the injection zones of the chamber.
  • injection of etchant may occur, with a separate line from the gas panel to the processing chamber for each of the injection zones of the chamber, with a mixer near the processing chamber.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention provides methods, systems, and apparatus for epitaxial film formation that includes an epitaxial chamber (101) adapted to form an epitaxial layer on a substrate; a deposition gas manifold (103) adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber; and an etchant gas manifold (109), separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber.

Description

GAS WLANIFOLDS FOR USE DURING EPITAXIAL FILM FORMATION
CROSS REFERENCE TO RELATED APPLICATION
This application claims priority to U.S. Provisional Patent Application Serial No. 60/790,227, filed April 7, 2006 (Docket No. 10302/L) , entitled "Gas Manifolds For Use During Epitaxial Film Formation." This application is also related to U.S. Provisional Patent Application Serial No. 60/790,066, filed April 7, 2006 (Docket No. 10318/L) , entitled "Cluster Tool For Epitaxial Film Formation," U.S. Patent Application Serial No. 11/047,323, filed January 28, 2005 (Docket No. 9793), and U.S. Patent Application Serial No. 11/227,974, filed September 14, 2005 (Docket No. 9618/P1), which is a continuation-in-part of and claims priority to U.S. Patent Application Serial No. 11/001,774, filed December 1, 2004 (Docket No. 9618) . Each of the above applications is hereby incorporated by reference herein in its entirety.
FIELD OF THE INVENTION
The present invention relates generally to semiconductor device manufacturing, and more particularly to gas mani-folds for use during epitaxial film formation.
BACKGROUND
A conventional selective epitaxy process involves a deposition reaction and an etch reaction. The deposition and etch reactions occur concurrently with relatively different reaction rates to an epitaxial layer and to a polycrystalline layer. During the deposition process, the epitaxial layer is formed on a monocrystalline surface while a polycrystalline layer is deposited on at least a second layer, siϊch as an existing polycrystalline layer and/or an amorphous layer. However, the deposited polycrystalline layer is generally etched at a faster rate than the epitaxial layer. Therefore, by changing the concentration of an etchant gas, the net selective process results in deposition of epitaxy material and limited, or no, deposition of polycrystalline material. For example, a selective epitaxy process may result in the formation of an epilayer of silicon-containing material on a monocrystalline silicon surface while no deposition is left on the spacer. Selective epitaxy processes generally have some drawbacks . In order to maintain selectivity during such epitaxy processes, chemical concentrations of the precursors, as well as reaction temperatures must be regulated and adjusted throughout the deposition process. If not enough silicon precursor is administered, then the etching reaction may dominate and the overall process is slowed down. Also, harmful over etching of substrate features may occur. If not enough etchant precursor is administered, then the deposition reaction may dominate reducing the selectivity to form monocrystalline and polycryst-alline materials across the substrate surface. Also, conventional selective epitaxy processes usually require a high reaction temperature, such as about 8000C, 1,0000C or higher. Such high temperatures are not desirable during a fabrication process due to thermal budget considerations and possible uncontrolled nitridation reactions to the substrate surface.
As an alternative to a conventional selective epitaxy process, previously incorporated U.S. Patent Application Serial No. 11/001,774, filed December 1, 2004 (Docket No. 9618) describes an alternating gas supply (AGS) process that includes repeating a cycle of a deposition process and an etching process until the desired thickness of an epitaxial layer is formed. Because an AGS process uses separate deposition and etching steps, deposition precursor concentrations need not be maintained during etching steps and etching precursor concentrations need not be maintained during deposition steps. In some cases, lower reaction temperatures may be employed.
For 'both selective epitaxy and AGS processes, a need • remains for a system for efficiently practicing such processes.
SXJMMARY OF THE INVENTION
. In some aspects, the present invention provides an epitaxial film formation system that includes an epitaxial chamber adapted to form an epitaxial layer on a substrate; a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber; and an etchant gas manifold separate from the deposition gas manifold and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber-.
In other aspects, the present invention provides a method of forming an epitaxial film that includes supplying at least one deposition gas and a carrier gas to an epitaxial" chamber from a deposition gas manifold; and supplying at least one etchant gas and a carrier gas to the epitaxial chamber from an etchant gas manifold separate from the deposition gas manifold. In yet other aspects, the present invention provides an apparatus for use in forming an epitaxial film that includes a mixing junction coupled to an epitaxial chamber adapted to form an epitaxial layer on a substrate, a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber, and an etchant gas manifold, separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber.
In yet still other aspects, the present invention provides an apparatus for use in forming an epitaxial film that includes a mixing chamber coupled to an epitaxial chamber adapted to form an epitaxial layer on a substrate, a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber, and an etchant gas manifold, separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber.
Other features and aspects of the present invention will become more fully apparent from the following detailed description, the appended claims and the accompanying drawings .
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic drawing of a first exemplary epitaxial film formation system in accordance with an embodiment of the present invention.
FIG. 2 is a schematic drawing of a second exemplary epitaxial film formation system in accordance with an embodiment of the present invention. FIG. 3 is a schematic drawing of a third exemplary epitaxial film formation system in accordance with an embodiment of the present invention.
FIG. 4 is a schematic drawing of a fourth exemplary epitaxial film formation system in accordance with an embodiment of the present invention.
DETAILED DESCRIPTION
Conventional epitaxial film formation systems generally use a single deposition and etch gas manifold because etch and deposition steps are performed simultaneously. In an alternating gas supply (AGS) epitaxial film formation system, deposition and etch steps are performed sequentially. Exemplary AGS systems are described in U.S. Patent Application Serial No. 11/001,774, filed December 1, 2004 (Docket No. 9618) and U.S. Patent Application Serial No. 11/227,974, filed September 14, 2005 (Docket No. 9618/P01), which are hereby incorporated by reference herein in there entirety.
In AGS systems it may be desirable to have a separate etchant and deposition manifold so that deposition and etch gases are immediately available to an epitaxial chamber when switching from deposition to etch and vice versa. The present invention provides methods .and apparatus for employing separate etchant and deposition manifolds.
FIG. 1 is a schematic drawing of a first exemplary epitaxial film formation system 100 (hereinafter Λfirst Epi system 100' ) in accordance with an embodiment of the present invention. The first Epi system 100 may include an epitaxial chamber 101 coupled to (1) a deposition manifold 103 via a chamber valve system 105 and a deposition gas line 107; and (2) an etchant manifold 109 via the chamber valve system 105 and an etchant gas line 111. As shown in FIG. 1, the chamber valve system 105, the deposition gas line 107 and the etchant gas line 111 are coupled at a mixing junction -113 (e.g., a t-junction or similar connection) .
In accordance with an embodiment of the present invention, the epitaxial chamber 101 may comprise any conventional epitaxial chamber adapted for forming epitaxial films on one or more substrates. An exemplary epitaxial chamber may be found in the Epi Centura® system and the Poly Gen® system available from Applied Materials, Inc., located in Santa Clara, California, although other epitaxial chambers and/or systems may be used.
With reference to FIG. 1, the deposition manifold 103 may include flow controllers 115a-d (e.g., mass flow controllers (MFC) , volume flow controllers (VFC) , valves, etc. ) . The flow controllers 115a-d may be coupled to gas sources 117a-d (e.g., gas bottles and/or facility lines, etc.) via a first set of gas lines 119a-d. The flow controllers 115a-d may also be coupled to the deposition gas line 107 'via a second set of gas lines 121a-d. The gas lines 119a-d, 121a-d and the deposition gas line 107 may comprise stainless steel tubing or other suitable tubing/piping (e.g., AISI 316L, etc.).
In the embodiment of FIG. 1, the deposition manifold .103 may include four flow controllers 115a-d coupled to four gas sources 117a-d. However, there may be more or less than four flow controllers 115a-d. In addition, there may be more or less than four gas sources 117a-d coupled to the flow controllers 115a-d. For example, a source of a gas (e.g., N2, silane, HCl, etc.) may be coupled to more than one flow controller and/or more than one source of gas may be coupled to a flow controller.
The flow controllers 115a-d may be joined with the gas lines 119a-d and 121a-d by employing compressible gaskets, for example, although any suitable connection devices may be employed. The flow controllers 115a-d may be the same or different from each other. Additionally, the flow controllers 115a-d may control flow based on mass, volume, time (e.g., turning on and off a pneumatic valve based on time) , etc.
FIG. 1 depicts the gas sources 117a-d as being disposed external to the deposition manifold 103. However, the gas sources 117a-d may be included in the deposition manifold -103. The gas sources 117a-d (e.g., gas bottles, etc. ) may be disposed in a sub-fab or other such location outside a semiconductor device manufacturing clean room or chase. Alternatively, the gas sources 117a-d may be disposed near or within a cluster tool in the semiconductor device fabrication clean room and/or chase. Further, the gas sources 117a-d may be provided by facilities of a semiconductor device fabrication plant. Chemical compounds housed and/or carried by the gas sources 117a-d may be in gaseous, liquid and/or solid form and may subsequently be evaporated into a gaseous form for use in the epitaxial chamber 101 to form an epitaxial film.
With reference to FIG. 1, the etchant manifold 109 may include flow controllers 123a-d (e.g., mass flow controllers (MFC) , volume flow controllers (VFC) , valves, etc. ) . The flow controllers 123a-b may be coupled to gas sources 125a-b (e.g., gas bottles, facility lines, etc.) via a first set of gas lines 127a-b. The flow controllers 123a- b may also be coupled to the etchant gas line 111 via a second set of gas lines 129a-b. The gas lines 127a-b and 129a-b and the etchant gas line 111 may comprise stainless steel tubing or other suitable tubing/piping {e.g., AISI 316L, etc. ) .
In the embodiment of FIG. 1, the etchant manifold 109 may include two flow controllers 123a-b coupled to two gas sources 127a-b. However, there may be more or less than two flow controllers 123a-b. In addition, there may be more or less than two gas sources 125a-b coupled to the flow controllers 123a-b. For example, a source of a gas (e.g., N2, HCl, .C12, etc.) may be coupled to more than one flow controller and/or more than one source of gas may be coupled to a flow controller.
The flow controllers 123a-b may be joined with the gas lines 127a-b and 129a-b by employing compressible gaskets, for example, although any suitable connection devices may be employed. Additionally, the flow controllers 123a-b may be the same or different from each other. The flow controllers 123a-b may control flow based on mass, volume, time (e.g., turning on and off a pneumatic valve based on time) , etc.
FIG. 1 depicts the gas sources 125a-b as being disposed external to the etchant manifold 109. However, the gas sources 125a-b may be included in the etchant manifold 109. The gas sources 125a-b (e.g., gas bottles, etc.) may be disposed in a sub-fab or other such location outside a semiconductor device manufacturing clean room or chase. Alternatively, the gas sources 125a-b may be disposed near or within a cluster tool in the semiconductor device fabrication clean room and/or chase. Further, the gas sources 125a-b may be provided by facili-ties of a semiconductor device fabrication plant. Chemical compounds housed and/or carried by the gas sources 125a-b may be in gaseous, liquid and/or solid form and may subsequently be evaporate.d into a gaseous form for use in the epitaxial chamber 101 to form an epitaxial film.
The chamber valve system 105 may include an outer chamber flow controller 131 and an inner chamber flow controller 133. The outer chamber flow controller 131 may be coupled to an outer region O of the epitaxial chamber 101 via outer chamber gas lines 135a-b (e.g. stainless steel or similar piping/tubing) . The inner chamber flow controller 133 may be coupled to an inner region I of the epitaxial chamber 101 by an inner chamber gas line 137 (e.g., stainless steel or similar piping/tubing) . Note that the inner region I and outer region O of the epitaxial chamber 101 depicted in FIG. 1 are not drawn to scale and are merely representative. The relative size and location of the inner region I and outer region O may vary according to the use of the epitaxial chamber 101.
. The outer chamber flow controller 131 and inner chamber flow controller 133 may be joined with the mixing junction 113 using welding or any other suitable method. The outer chamber flow controller 131 and inner chamber flow controller 133 may be MFCs, volume flow controllers, valves (e.g. pneumatic), etc. The outer chamber flow controller 131 may also be joined with the gas lines 135a-b using welding or other suitable methods.
The mixing junction 113 may be a conventional t- junction to which the gas lines 107 and 111 may be joined. The mixing junction 113 may also include other geometries. For example, rather than employing a t-junction, a y- junction may be employed, as may differing and/or variable dimensions of the portion of a junction that mixes the gases. Alternatively, the junction may be an x-junction in which different branches may be respectively coupled to the outer chamber flow controller 131, inner chamber flow controller 133, deposition gas line 107 and etchant gas line 111. Depending on the gas sources employed, selection of a particular geometry and/or volume arrangement may improve the uniformity of the mixture of the gases in the mixing junction 113.
Through use of separate deposition and etchant manifolds 103, 109, during an AGS process, gases used during etching are immediately available to the epitaxial chamber 101 following deposition. Likewise, gases used during deposition are immediately available to the epitaxial chamber 101 following etching. Note that carrier gas (e.g., N2, H2, etc.) may be continuously flowed from both the deposition manifold 103 and the etchant manifold 109 during deposition and etching to avoid flow spikes due to turning the carrier gas on/off. For example, the carrier gas flow rate may be much larger than the etchant/source flow rates (e.g., about 10-20 slm for. a carrier gas versus about 1 slm or less for etchant/deposition gasses in at least one embodiment) . In one exemplary embodiment, a carrier gas flow rate of about 10 slm is continuously flowed from each of the deposition manifold 103 and the etchant manifold 109, although other flow rates may be used.
FIG. 2 is a schematic drawing of a second exemplary, epitaxial film formation system 200 (hereinafter second Epi system 200' ) in accordance with an embodiment of the present invention. The second Epi system 200 of FIG. 2 is similar to the first epi system 100 of FIG. 1, but employs a mixing chamber 201 in place of the mixing junction 113 of the first Epi system 100 of FIG. 1. As shown in FIG. 2, the chamber valve system 105, the deposition gas line 107 and the etchant gas line 111 are coupled to the mixing chamber 2.01.
The mixing chamber 201 may be any chamber shape/size that improves gas mixing prior to entry into the epitaxial chamber 101. For example, the mixing chamber 201 may be cylindrical, cubical, spherical or the like.
The second Epi system 200 operates similarly to the first Epi system 100 of FIG. 1. However, because of the mixing chamber 201, improved mixing of gases occurs prior to entry of the gases into the epitaxial chamber 101. In some embodiments, such improved gas mixing may improve epitaxial film surface morphology (e.g., by more uniformly mixing carrier gas and etchant and/or deposition gases prior to entry into the epitaxial chamber 101) .
FIG. 3 is a schematic drawing of a third exemplary epitaxial film formation system 300 (hereinafter λthird Epi system 300' ) in accordance with an embodiment of the present invention. The third Epi system 300 of FIG. 3 is similar to the first epi system 100 of FIG. 1, but replaces the chamber valve system 105 with a deposition valve system 301 and an etchant valve system 303.
The deposition valve -system 301 has an outer chamber flow controller 305, and an inner chamber flow controller 307. Likewise, the etchant valve system 303 includes an outer chamber flow controller 309, and an inner chamber flow controller 311. The third Epi system 300 may also replace the mixing junction 113 of FIG. 1 with an outer chamber mixing junction 313 and an inner chamber mixing junction 315. Both the outer chamber flow controller 305 of the deposition valve system 301 and the outer chamber flow controller 309 of the etchant valve system 303 are coupled to the outer chamber mixing junction 313. Both the inner chamber flow controller 307 of the deposition valve system 301 and the inner chamber flow controller 311 of the etchant valve system 303 are coupled to the inner chamber mixing junction 315.
As shown in FIG. 3, the deposition gas line 107 is coupled to the outer chamber flow controller 305 and the inner chamber flow controller 307 of the deposition valve system 301. The etchant gas line 111 is coupled to the outer chamber flow controller 309 and the inner chamber flow controller 311 of the etchant valve system 303. The flow controllers 305, 307, 309 and 311 may be MFCs, volume flow controllers, valves [e.g. pneumatic), or any other suitable flow controllers.
• The third Epi system 300 operates similarly to the first Epi system 100 of FIG. 1. However, placement of the mixing junctions 313, 315 closer to the epitaxial chamber 101 (relative to the mixing junction 313 of FIG. 1) may improve gas mixing in some embodiments. In at least one embodiment of the invention, the flow controllers 305, 307, 309 and 311 are each set to a desired position/flow rate and are kept open during film formation (e.g., to avoid delays and/or spikes) . For example, only the flow controllers 115a-d and/or 123a-b need be opened and closed. FIG. 4 is a schematic drawing of a fourth exemplary epitaxial film formation system 400 (hereinafter 'fourth Epi system 400') in accordance with an embodiment of the present invention. The fourth Epi system 400 of FIG. 4 is similar to the third epi system 300 of FIG. 3, but replaces the outer chamber mixing junction 313 with an outer mixing chamber 401 and the inner chamber mixing junction 315 with an inner mixing chamber 403. Thus, the outer chamber flow controller 305 of the deposition valve system 301 and the outer chamber flow controller 309 of the etchant valve system 303 are coupled to the outer mixing chamber 401. Likewise, the inner chamber flow controller 307 of the deposition valve system 301 and the inner chamber flow controller- 311 of the etchant valve system 303 are coupled to the inner mixing chamber 403.
The mixing chambers 401, 403 may be any chamber shape/size that improves gas mixing prior to entry into the epitaxial chamber 101. For example, the mixing chambers 401, 403 may be cylindrical, cubical, spherical or the like.
The fourth Epi system 400 operates similarly to the third Epi system 300 of FIG. 3. However, because of the mixing chambers 401, 403, improved mixing of gases occurs prior to entry of the gases into the epitaxial chamber 101. In some embodiments, such improved gas mixing may improve epitaxial' film surface morphology (e.g., by more uniformly mixing carrier gas and etchant and/or deposition gases prior to entry into the epitaxial chamber 101) .
The foregoing description discloses only exemplary embodiments of the invention. Modifications of the above disclosed apparatus and methods which fall within the scope of the invention will be readily apparent to those of ordinary skill in the art. For instance, while the deposition manifold 103 and etchant manifold 109 are shown on opposite sides of the epitaxial chamber 101, it will be understood that the deposition manifold 103 and etchant manifold 109 may be on the same side of the epitaxial chamber 101 or in any other suitable location {e.g., while remaining separate manifolds) . Furthermore, the deposition manifold 103 and etchant manifold 109 may be part of an overall gas manifold that employs a separate etchant line to deliver etchants to a processing chamber {independently of the line used to deliver deposition species) as described above in FIGS. 1-4.
In at least one embodiment of the invention, injection of etchant (e.g., C12) occurs through an independent fluid supply line, without mixing with other gases in a gas panel (e.g., source gases, deposition gases, etc.). For example, injection of etchant may occur through an independent line with a flow control device.
In one particular embodiment, injection of etchant may occur through an independent line with a flow control device, with the line split near a processing chamber (e.g., an epitaxial film formation chamber) to divide the etchant between injection zones of the chamber, in order to achieve desired uniformity of etching. In some embodiments, a flow divider or a valve may be used on each of the splits.
In some embodiments, injection of etchant may occur through an independent line, without mixing with other gases in ,a gas panel, with a mixer near the processing chamber (e.g., an epitaxial film formation chamber).
In at least one embodiment, injection of etchant may occur, with a separate line from the gas panel to the processing chamber for each of the injection zones of the chamber. For example, injection of etchant may occur, with a separate line from the gas panel to the processing chamber for each of the injection zones of the chamber, with a mixer near the processing chamber. In some embodiments, injection of etchant may occur, with a separate line from the gas panel to the processing chamber, with only a carrier gas, such as N2, He, Ar, etc., connected to the etchant line at the gas panel.
In some embodiments, injection of etchant may occur, in which the mixing of the etchant with other active chemicals (e.g., liquids) required for the process takes place at a point where the pressure in the line does not exceed the chamber pressure by about 20 Torr .
In at least one embodiment, C12 may be employed for epitaxial film formation, cleaning, and/or etching Si- containing materials (preferably at a chamber pressure of about 1 Torr or above) .
In some embodiments, injection of etchant may occur, where the etchant is mixed with other gases/liquids such as Si precursors, dopant gases, etc., in a gas panel for deposition, cleaning, and/or etching of Si-containing materials (preferably at chamber pressure of about 1 Torr or above) . For example, a thermal processing chamber may be provided for using an etchant (e.g., C12) for deposition, cleaning, and/or etching of Si-containing materials (preferably at a chamber pressure of about 1 Torr or above) . A tool comprising a gas panel, a processing chamber, and delivery lines connected to the processing chamber from the gas panel may use an etchant (e.g., C12) for deposition, cleaning, and/or etching of Si-containing materials, preferably at a chamber pressure of about 1 Torr or above.
In some embodiments, injection of etchant may occur, where the etchant is mixed with the rest of the liquids (such as Si precursors, dopant gases, etc.) in the gas panel. In at least one embodiment, injection of etchant may occur through an independent line with a flow control device, with the line split near the chamber to divide the etchant between injection zones of the chamber, upstream from the metering valves . The same metering valves may be used to vary distribution of the etchant and the rest of the processing gases between the injection zones of the chamber. In some embodiments, injection of etchant may occur, with a separate line from the gas panel to the processing chamber for each of the injection zones of the chamber, with a mixer near the processing chamber.
Accordingly, while the present invention has been disclosed in connection with exemplary embodiments thereof, it should be understood that other embodiments may fall within the spirit and scope of the invention, as defined by the following claims .

Claims

THE INVENTION CLAIMED IS:
1. An epitaxial film formation system comprising: an epitaxial chamber adapted to form an epitaxial layer on a substrate; a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber; and an etchant gas manifold separate from the deposition gas manifold and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber.
2. The system of claim 1 wherein the epitaxial film formation system further includes a chamber valve system coupled to the epitaxial chamber between the deposition gas manifold and the etchant gas manifold.
3. The system of claim 2 wherein the chamber valve system is coupled to the deposition gas manifold and the etchant gas manifold via a mixing junction.
4. The system of claim 2 wherein the chamber valve system is coupled to the deposition gas manifold and the etchant gas manifold via a mixing chamber.
5. The system of claim 1 wherein the epitaxial film formation system further includes a deposition valve system coupled to the epitaxial chamber and the deposition gas manifold.
6. The system of claim 1 wherein the epitaxial film formation system further includes an etchant valve system coupled to the epitaxial chamber and the etchant gas manifold.
7. The system of claim 1 wherein the epitaxial film formation system further ■ includes : a deposition valve system coupled to the epitaxial chamber and the deposition gas manifold; and an etchant valve system coupled to the epitaxial chamber and the etchant gas manifold.
8. The system of claim 1 wherein the epitaxial film formation system further includes: a deposition valve system coupled to the deposition gas manifold and to a mixing junction leading to the epitaxial chamber; and an etchant valve system coupled to the etchant gas manifold and the mixing junction leading to the epitaxial chamber .
9. The system of claim 1 wherein the . epitaxial film formation system further includes: a deposition valve system coupled to the deposition gas manifold and to a mixing chamber leading to the epitaxial chamber; and an etchant valve system coupled to the etchant gas manifold and the mixing chamber leading to the epitaxial chamber.
10. A method of forming an epitaxial film comprising: supplying at least one deposition gas and a carrier gas to an epitaxial chamber from a deposition gas manifold; and supplying at least one etchant gas and a carrier gas to the epitaxial chamber from an etchant gas manifold separate from the deposition gas manifold.
11. The 'method of claim 10 further including using a chamber valve system coupled to the epitaxial chamber between the deposition gas manifold and the etchant gas manifold to carry the gases to the epitaxial chamber.
12. The method of claim 11 further including using a mixing junction coupled to the chamber valve system, the deposition gas manifold, and the etchant gas manifold.
13. The method of claim 11 further including using a mixing chamber coupled to the chamber valve system, the deposition gas manifold, and the etchant gas manifold.
14. The method of claim 10 further including using a deposition valve coupled to the epitaxial chamber and the deposition gas manifold.
15. The method of claim 10 further including using an etchant valve system coupled to the epitaxial chamber and the etchant gas manifold.
16. The method of claim 10 further including using a deposition valve system coupled to the epitaxial chamber and the deposition gas manifold and using an etchant valve system coupled to the epitaxial chamber and the etchant gas manifold.
17. The method of claim 10 further including using a deposition valve system coupled to the deposition gas manifold and to a mixing junction leading to the epitaxial chamber; and using an etchant valve system coupled to the etchant gas manifold and the mixing junction leading to the epitaxial chamber.
18. The method of claim 10 further including using a deposition valve system coupled to the deposition gas manifold and to a mixing chamber leading to the epitaxial chamber; and using an etchant valve system coupled to the etchant gas manifold and the mixing chamber leading to the epitaxial chamber.
19. An apparatus for use in forming an epitaxial film comprising : a mixing junction coupled to an epitaxial chamber adapted to form an epitaxial layer on a substrate/ a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber, and an etchant gas manifold, separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber.
20. An apparatus for use in forming an epitaxial film comprising: a mixing chamber coupled to an epitaxial chamber adapted to form an epitaxial layer on a substrate, a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber, and an etchant gas manifold, separate from the deposition gas manifold/ and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber.
EP07754972A 2006-04-07 2007-04-06 Gas manifolds for use during epitaxial film formation Withdrawn EP2021525A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US79022706P 2006-04-07 2006-04-07
PCT/US2007/008541 WO2007117576A2 (en) 2006-04-07 2007-04-06 Gas manifolds for use during epitaxial film formation

Publications (1)

Publication Number Publication Date
EP2021525A2 true EP2021525A2 (en) 2009-02-11

Family

ID=38581635

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07754972A Withdrawn EP2021525A2 (en) 2006-04-07 2007-04-06 Gas manifolds for use during epitaxial film formation

Country Status (6)

Country Link
EP (1) EP2021525A2 (en)
JP (1) JP2009533843A (en)
KR (1) KR20090006144A (en)
CN (1) CN101415859A (en)
TW (1) TW200805456A (en)
WO (1) WO2007117576A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7674337B2 (en) 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
US7655543B2 (en) * 2007-12-21 2010-02-02 Asm America, Inc. Separate injection of reactive species in selective formation of films
CN101643904B (en) * 2009-08-27 2011-04-27 北京北方微电子基地设备工艺研究中心有限责任公司 Deep silicon etching device and intake system thereof
JP5864360B2 (en) * 2011-06-30 2016-02-17 東京エレクトロン株式会社 Silicon film forming method and apparatus therefor
SG11201609741XA (en) * 2014-06-13 2016-12-29 Applied Materials Inc Dual auxiliary dopant inlets on epi chamber
KR102832947B1 (en) * 2019-01-31 2025-07-10 램 리써치 코포레이션 Multi-position gas injection to improve uniformity in rapid alternating processes

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
US5849092A (en) * 1997-02-25 1998-12-15 Applied Materials, Inc. Process for chlorine trifluoride chamber cleaning
US20030066486A1 (en) * 2001-08-30 2003-04-10 Applied Materials, Inc. Microwave heat shield for plasma chamber
US6590344B2 (en) * 2001-11-20 2003-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Selectively controllable gas feed zones for a plasma reactor
JP3872027B2 (en) * 2003-03-07 2007-01-24 株式会社東芝 Cleaning method and semiconductor manufacturing apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2007117576A2 *

Also Published As

Publication number Publication date
CN101415859A (en) 2009-04-22
KR20090006144A (en) 2009-01-14
WO2007117576A2 (en) 2007-10-18
JP2009533843A (en) 2009-09-17
TW200805456A (en) 2008-01-16
WO2007117576A3 (en) 2008-10-16

Similar Documents

Publication Publication Date Title
US7674337B2 (en) Gas manifolds for use during epitaxial film formation
US11053591B2 (en) Multi-port gas injection system and reactor system including same
US20230313377A1 (en) Gas distribution system and reactor system including same
CN112626494B (en) Gas injection system and reactor system including the same
KR101883360B1 (en) Method and apparatus for the selective deposition of epitaxial germanium stressor alloys
US8486191B2 (en) Substrate reactor with adjustable injectors for mixing gases within reaction chamber
US11814727B2 (en) Systems and methods for atomic layer deposition
EP2231896B1 (en) Separate injection of reactive species in selective formation of films
TWI598458B (en) Method and apparatus for forming bismuth tin alloy by thermal CVD
US9127345B2 (en) Methods for depositing an epitaxial silicon germanium layer having a germanium to silicon ratio greater than 1:1 using silylgermane and a diluent
WO2007117576A2 (en) Gas manifolds for use during epitaxial film formation
CN111394789A (en) Gas inlet structure, gas inlet method and gas inlet equipment of chemical vapor deposition equipment
KR20260046044A (en) Methods for silicon germanium uniformity control using multiple precursors
WO2005024926A1 (en) Substrate treating device and method of manufacturing semiconductor device
US20150329969A1 (en) Uniformity and selectivity of low gas flow velocity processes in a cross flow epitaxy chamber with the use of alternative highly reactive precursors though an alternative path
JP2025158810A (en) Film forming method and film forming apparatus

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20081106

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR MK RS

RIN1 Information on inventor provided before grant (corrected)

Inventor name: SAMOILOV, ARKADII, V.

Inventor name: KIM, YIHWAN

Inventor name: ZOJAJI, ALI

Inventor name: METZNER, CRAIG, R.

Inventor name: ISHIKAWA, DAVID

RBV Designated contracting states (corrected)

Designated state(s): DE FR NL

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20101101