EP1988569A3 - Procédé pour la fabrication d'un contact à borne d'un dispositif semi-conducteur de puissance et composant électronique avec un contact à borne fabriqué selon ce procédé - Google Patents

Procédé pour la fabrication d'un contact à borne d'un dispositif semi-conducteur de puissance et composant électronique avec un contact à borne fabriqué selon ce procédé Download PDF

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Publication number
EP1988569A3
EP1988569A3 EP07008553A EP07008553A EP1988569A3 EP 1988569 A3 EP1988569 A3 EP 1988569A3 EP 07008553 A EP07008553 A EP 07008553A EP 07008553 A EP07008553 A EP 07008553A EP 1988569 A3 EP1988569 A3 EP 1988569A3
Authority
EP
European Patent Office
Prior art keywords
terminal
manufacturing
manner
power semiconductor
semiconductor component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP07008553A
Other languages
German (de)
English (en)
Other versions
EP1988569A2 (fr
Inventor
Martin Birner
Rainer Kreutzer
Heinz Dr. Wöllmer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to EP07008553A priority Critical patent/EP1988569A3/fr
Publication of EP1988569A2 publication Critical patent/EP1988569A2/fr
Publication of EP1988569A3 publication Critical patent/EP1988569A3/fr
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/12—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding
    • H—ELECTRICITY
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
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    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Die Bonding (AREA)
EP07008553A 2007-04-26 2007-04-26 Procédé pour la fabrication d'un contact à borne d'un dispositif semi-conducteur de puissance et composant électronique avec un contact à borne fabriqué selon ce procédé Ceased EP1988569A3 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP07008553A EP1988569A3 (fr) 2007-04-26 2007-04-26 Procédé pour la fabrication d'un contact à borne d'un dispositif semi-conducteur de puissance et composant électronique avec un contact à borne fabriqué selon ce procédé

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP07008553A EP1988569A3 (fr) 2007-04-26 2007-04-26 Procédé pour la fabrication d'un contact à borne d'un dispositif semi-conducteur de puissance et composant électronique avec un contact à borne fabriqué selon ce procédé

Publications (2)

Publication Number Publication Date
EP1988569A2 EP1988569A2 (fr) 2008-11-05
EP1988569A3 true EP1988569A3 (fr) 2008-12-10

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EP07008553A Ceased EP1988569A3 (fr) 2007-04-26 2007-04-26 Procédé pour la fabrication d'un contact à borne d'un dispositif semi-conducteur de puissance et composant électronique avec un contact à borne fabriqué selon ce procédé

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201316423A (zh) * 2011-10-04 2013-04-16 Lextar Electronics Corp 增強基板與半導體晶片間打線接合的方法及焊接控制系統
US9773719B2 (en) 2012-11-26 2017-09-26 Infineon Technologies Dresden Gmbh Semiconductor packages and methods of fabrication thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3137570A1 (de) * 1980-09-25 1983-03-31 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zum direkten verbinden von kupferteilen mit oxidkeramiksubstraten
DE3523061A1 (de) * 1985-06-27 1987-01-02 Siemens Ag Halbleiter-chip-anordnung
US5189507A (en) * 1986-12-17 1993-02-23 Raychem Corporation Interconnection of electronic components
US5715989A (en) * 1996-06-04 1998-02-10 Texas Instruments Incorporated Microelectronic wire bonding using friction welding process
DE102004003275A1 (de) * 2004-01-21 2005-08-25 Infineon Technologies Ag Verbindungselemente auf Halbleiterchips für Halbleiterbauteile und Verfahren zur Herstellung derselben
US20060185892A1 (en) * 2005-01-19 2006-08-24 Volker Guengerich Semiconductor device with micro connecting elements and method for producing the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3665254A (en) * 1970-10-12 1972-05-23 Rca Corp Semiconductor diode

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3137570A1 (de) * 1980-09-25 1983-03-31 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zum direkten verbinden von kupferteilen mit oxidkeramiksubstraten
DE3523061A1 (de) * 1985-06-27 1987-01-02 Siemens Ag Halbleiter-chip-anordnung
US5189507A (en) * 1986-12-17 1993-02-23 Raychem Corporation Interconnection of electronic components
US5715989A (en) * 1996-06-04 1998-02-10 Texas Instruments Incorporated Microelectronic wire bonding using friction welding process
DE102004003275A1 (de) * 2004-01-21 2005-08-25 Infineon Technologies Ag Verbindungselemente auf Halbleiterchips für Halbleiterbauteile und Verfahren zur Herstellung derselben
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