EP1987548A1 - Halbleiterbauelement und verfahren zu dessen herstellung sowie dessen verwendung - Google Patents
Halbleiterbauelement und verfahren zu dessen herstellung sowie dessen verwendungInfo
- Publication number
- EP1987548A1 EP1987548A1 EP07711548A EP07711548A EP1987548A1 EP 1987548 A1 EP1987548 A1 EP 1987548A1 EP 07711548 A EP07711548 A EP 07711548A EP 07711548 A EP07711548 A EP 07711548A EP 1987548 A1 EP1987548 A1 EP 1987548A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- silicon
- layer
- semiconductor component
- masking layer
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 230000000873 masking effect Effects 0.000 claims abstract description 21
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000007669 thermal treatment Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 27
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 238000004090 dissolution Methods 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000000608 laser ablation Methods 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000007858 starting material Substances 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 239000004411 aluminium Substances 0.000 abstract 2
- 210000004027 cell Anatomy 0.000 description 11
- 238000002161 passivation Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000004922 lacquer Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Definitions
- the invention relates to a semiconductor component of a silicon wafer having at least one optically mirrored surface, in which by applying the method according to the invention in a simple way mirroring can be produced with a high reflection value.
- the efficiency of solar cells it is crucial, on the one hand to increase the efficiency, on the other hand to reduce the thickness of the wafer.
- the development of the back of the solar cell is crucial, since particularly high demands are placed on optical and electrical properties.
- the optics the highest possible internal reflectivity is sought, so that light which has penetrated from the front into the wafer and has not yet been absorbed is applied to the cell surface. can be reflected back and so is a new way to absorb the light in the silicon.
- the electrical properties can be achieved particularly well by using a dielectric passivation layer.
- dielectric passivation layers which are usually made of silicon oxide, have a refractive index that is very different from that of silicon, which provides advantages in the internal reflection of the light in the solar cell.
- the internal reflectivity is then further increased by an additionally deposited metallic layer, usually of aluminum.
- a method for producing a semiconductor component with at least one optically mirrored surface is provided. This method is based on the fact that a silicon wafer having on at least one of its surfaces at least partially an etchable dielectric layer, with a marking layer of amorphous silicon or a silicon-containing layer having a silicon content of at least 60 wt .-% for shielding against fluidic media is provided, wherein the masking layer is deposited on the dielectric layer. An aluminum layer is then deposited on the masking layer. In a further step, then a thermal treatment of the layer system, wherein there is a dissolution of the silicon in the aluminum.
- an efficient masking of selected areas against the grip fluidic etching media such as by hydrofluoric acid allows. This is because amorphous silicon or silicon-rich layers have high resistance to hydrofluoric acid.
- the masking layer consists of amorphous silicon, which has a particularly high resistance to hydrofluoric acid.
- a further preferred variant provides that the masking layer consists of silicon nitride.
- the silicon content is preferably at least 60% by weight, particularly preferably at least 70% by weight.
- the deposition of the masking layer it is possible to use all methods known from the prior art, plasma-enhanced chemical vapor deposition being preferred.
- amorphous silicon preference is given to using silane (SiH 4 ) and optionally hydrogen (H 2 ) as starting materials.
- the vapor deposition is preferably carried out at a pressure of 20 to 280 Pa, in particular 30 to 75 Pa.
- the temperature is preferably in the range of 20 to 400 0 C, in particular 200 to 300 0 C.
- the deposition of the masking layer can also be effected by means of sputtering.
- a material selected from the group consisting of silicon oxide, silicon nitride, silicon carbide and aluminum oxide is preferably used for the passivation layer.
- a thermal treatment is carried out at temperatures in the range of preferably 150 to 950 0 C and more preferably from 300 to 550 0 C. The temperature selection is determined over the time window, so that a short thermal treatment at a higher temperature to the same Result as a longer treatment at low temperature leads. This described temperature treatment leads to a dissolution process of the silicon in the aluminum.
- the resulting layer of aluminum and silicon has very high reflectance values.
- the masking layer after the masking layer has been deposited, it can be patterned by means of laser ablation so that the masking layer can be used as a local etching mask.
- a semiconductor component made of a silicon wafer with at least one optically mirrored surface is likewise provided.
- the silicon wafer has a dielectric passivation layer on the at least one optically mirrored surface.
- the semiconductor components according to the invention have comparably high reflection values compared with the systems known from the prior art from a wafer with a silicon oxide layer deposited thereon.
- the semiconductor components according to the invention preferably have a reflection value in the range of> 90 % on. This simultaneously leads to an efficiency of the solar cell according to the invention of at least 18%.
- the semiconductor device according to the invention has been produced by the method described above.
- the process according to the invention is used in particular in the production of solar cells.
- the FIGURE shows a reflection measurement on a semiconductor component according to the invention, with a silicon wafer (250 ⁇ m thickness), a passivation layer of silicon oxide (100 nm thickness), a masking layer of amorphous silicon (50 nm thickness) and an aluminum layer (2 ⁇ m thickness). This is contrasted with reflection measurements on a system known from the prior art which has no masking layer.
- a layer with a much lower refractive index than that of silicon was preferably silicon oxide, for example produced by thermal oxidation or deposited by known coating methods.
- thermal oxides which were produced in the tube furnace at temperatures between 800 and 1050 0 C by heating the wafer in an oxygen-containing atmosphere.
- Deposed Oxi were prepared from nitrous oxide (N 2 O) and silane (SiH 4 ) in plasma assisted chemical vapor deposition in a parallel plate reactor.
- the refractive index of the dielectric layer was n ⁇ 1.45 (measured at 630 nm and RT).
- silicon oxide aluminum was vapor-deposited and a good mirror was formed.
- the amorphous silicon was then dissolved by thermal treatment in the aluminum layer.
- the amorphous silicon was produced from silane (SiH 4 ) and hydrogen (H 2 ) by plasma enhanced chemical vapor deposition (PECVD) in a pressure range of 30 to 75 Pa at temperatures of 200 to 300 0 C.
- the radiation output emerging again on the front side of the semiconductor component according to the invention was measured and set in relation to the radiated power, resulting in the reflection value.
- the reflectance value before the thermal treatment at 1200 nm is about 75%.
- the silicon dissolves in the aluminum and the reflection rises above 90%, as is the case even without the amorphous silicon in this layer system (see figure).
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006007797A DE102006007797B4 (de) | 2006-02-20 | 2006-02-20 | Verfahren zur Herstellung eines Halbleiterbauelements sowie dessen Verwendung |
PCT/EP2007/001325 WO2007096084A1 (de) | 2006-02-20 | 2007-02-15 | Halbleiterbauelement und verfahren zu dessen herstellung sowie dessen verwendung |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1987548A1 true EP1987548A1 (de) | 2008-11-05 |
Family
ID=38051789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP07711548A Withdrawn EP1987548A1 (de) | 2006-02-20 | 2007-02-15 | Halbleiterbauelement und verfahren zu dessen herstellung sowie dessen verwendung |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090032095A1 (de) |
EP (1) | EP1987548A1 (de) |
JP (1) | JP2009527895A (de) |
KR (1) | KR20080095252A (de) |
DE (1) | DE102006007797B4 (de) |
WO (1) | WO2007096084A1 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2331792A2 (de) | 2007-06-06 | 2011-06-15 | Areva Solar, Inc | Kombikraftwerk |
US20090126364A1 (en) * | 2007-06-06 | 2009-05-21 | Ausra, Inc. | Convective/radiative cooling of condenser coolant |
US8378280B2 (en) * | 2007-06-06 | 2013-02-19 | Areva Solar, Inc. | Integrated solar energy receiver-storage unit |
US20090056703A1 (en) | 2007-08-27 | 2009-03-05 | Ausra, Inc. | Linear fresnel solar arrays and components therefor |
US9022020B2 (en) | 2007-08-27 | 2015-05-05 | Areva Solar, Inc. | Linear Fresnel solar arrays and drives therefor |
US20090250108A1 (en) * | 2008-04-02 | 2009-10-08 | Applied Materials, Inc. | Silicon carbide for crystalline silicon solar cell surface passivation |
EP4350782A3 (de) * | 2009-04-21 | 2024-07-10 | Tetrasun, Inc. | Hocheffiziente solarzellenstrukturen und herstellungsverfahren dafür |
US9673341B2 (en) | 2015-05-08 | 2017-06-06 | Tetrasun, Inc. | Photovoltaic devices with fine-line metallization and methods for manufacture |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3413157A (en) * | 1965-10-21 | 1968-11-26 | Ibm | Solid state epitaxial growth of silicon by migration from a silicon-aluminum alloy deposit |
US4927770A (en) * | 1988-11-14 | 1990-05-22 | Electric Power Research Inst. Corp. Of District Of Columbia | Method of fabricating back surface point contact solar cells |
JP2706113B2 (ja) * | 1988-11-25 | 1998-01-28 | 工業技術院長 | 光電変換素子 |
JP3193287B2 (ja) * | 1996-02-28 | 2001-07-30 | シャープ株式会社 | 太陽電池 |
US6552414B1 (en) * | 1996-12-24 | 2003-04-22 | Imec Vzw | Semiconductor device with selectively diffused regions |
AUPO638997A0 (en) * | 1997-04-23 | 1997-05-22 | Unisearch Limited | Metal contact scheme using selective silicon growth |
US6423568B1 (en) * | 1999-12-30 | 2002-07-23 | Sunpower Corporation | Method of fabricating a silicon solar cell |
WO2001086732A1 (en) * | 2000-05-05 | 2001-11-15 | Unisearch Ltd. | Low area metal contacts for photovoltaic devices |
JP4171428B2 (ja) * | 2003-03-20 | 2008-10-22 | 三洋電機株式会社 | 光起電力装置 |
US7649141B2 (en) * | 2003-06-30 | 2010-01-19 | Advent Solar, Inc. | Emitter wrap-through back contact solar cells on thin silicon wafers |
-
2006
- 2006-02-20 DE DE102006007797A patent/DE102006007797B4/de not_active Expired - Fee Related
-
2007
- 2007-02-15 KR KR1020087020286A patent/KR20080095252A/ko not_active Application Discontinuation
- 2007-02-15 JP JP2008554680A patent/JP2009527895A/ja active Pending
- 2007-02-15 US US12/162,755 patent/US20090032095A1/en not_active Abandoned
- 2007-02-15 EP EP07711548A patent/EP1987548A1/de not_active Withdrawn
- 2007-02-15 WO PCT/EP2007/001325 patent/WO2007096084A1/de active Application Filing
Non-Patent Citations (1)
Title |
---|
See references of WO2007096084A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO2007096084A1 (de) | 2007-08-30 |
JP2009527895A (ja) | 2009-07-30 |
KR20080095252A (ko) | 2008-10-28 |
US20090032095A1 (en) | 2009-02-05 |
DE102006007797B4 (de) | 2008-01-03 |
DE102006007797A1 (de) | 2007-09-13 |
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Legal Events
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
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17P | Request for examination filed |
Effective date: 20080729 |
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RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: HOFMANN, MARC Inventor name: SCHULTZ, OLIVER |
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17Q | First examination report despatched |
Effective date: 20090210 |
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RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: HOFMANN, MARC Inventor name: SCHULTZ-WITTMANN, OLIVER |
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DAX | Request for extension of the european patent (deleted) | ||
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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18D | Application deemed to be withdrawn |
Effective date: 20150901 |