EP1981069A3 - Method of producing group III-V compound semiconductor, Schottky barrier diode, light emitting diode, laser diode, and method of fabricating the diodes - Google Patents

Method of producing group III-V compound semiconductor, Schottky barrier diode, light emitting diode, laser diode, and method of fabricating the diodes Download PDF

Info

Publication number
EP1981069A3
EP1981069A3 EP08003392.1A EP08003392A EP1981069A3 EP 1981069 A3 EP1981069 A3 EP 1981069A3 EP 08003392 A EP08003392 A EP 08003392A EP 1981069 A3 EP1981069 A3 EP 1981069A3
Authority
EP
European Patent Office
Prior art keywords
group iii
diode
compound semiconductor
fabricating
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08003392.1A
Other languages
German (de)
French (fr)
Other versions
EP1981069A2 (en
Inventor
Masaki Ueno
Yu Saitoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of EP1981069A2 publication Critical patent/EP1981069A2/en
Publication of EP1981069A3 publication Critical patent/EP1981069A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2908—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

There are provided a method of producing a group III-V compound semiconductor, a Schottky barrier diode, a light emitting diode, a laser diode and methods of fabricating the diodes, that can achieve a reduced n type carrier density. The method of producing a group III-V compound semiconductor is a method of producing the compound semiconductor by metal organic chemical vapor deposition employing a material containing a group III element. Initially the step of preparing a seed substrate (S10) is performed. Then the step of growing a group III-V compound semiconductor on the seed substrate is performed by employing as a group III element-containing material an organic metal containing at most 0.01 ppm of silicon, at most 10 ppm of oxygen and less than 0.04 ppm of germanium (S20).
EP08003392.1A 2007-04-11 2008-02-25 Method of producing group III-V compound semiconductor, Schottky barrier diode, light emitting diode, laser diode, and method of fabricating the diodes Withdrawn EP1981069A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007104027A JP2008263023A (en) 2007-04-11 2007-04-11 III-V compound semiconductor manufacturing method, Schottky barrier diode, light emitting diode, laser diode, and manufacturing method thereof

Publications (2)

Publication Number Publication Date
EP1981069A2 EP1981069A2 (en) 2008-10-15
EP1981069A3 true EP1981069A3 (en) 2013-06-26

Family

ID=39591770

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08003392.1A Withdrawn EP1981069A3 (en) 2007-04-11 2008-02-25 Method of producing group III-V compound semiconductor, Schottky barrier diode, light emitting diode, laser diode, and method of fabricating the diodes

Country Status (6)

Country Link
US (1) US20080251801A1 (en)
EP (1) EP1981069A3 (en)
JP (1) JP2008263023A (en)
KR (1) KR20080092253A (en)
CN (1) CN101311380B (en)
TW (1) TWI381072B (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7872285B2 (en) * 2005-03-04 2011-01-18 Sumitomo Electric Industries, Ltd. Vertical gallium nitride semiconductor device and epitaxial substrate
JPWO2009011394A1 (en) * 2007-07-17 2010-09-24 住友電気工業株式会社 Method for fabricating electronic device, method for fabricating epitaxial substrate, group III nitride semiconductor device, and gallium nitride epitaxial substrate
US20090149008A1 (en) * 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
US20110180133A1 (en) * 2008-10-24 2011-07-28 Applied Materials, Inc. Enhanced Silicon-TCO Interface in Thin Film Silicon Solar Cells Using Nickel Nanowires
JP4375497B1 (en) 2009-03-11 2009-12-02 住友電気工業株式会社 Group III nitride semiconductor device, epitaxial substrate, and method of manufacturing group III nitride semiconductor device
US8138069B2 (en) 2009-04-24 2012-03-20 Applied Materials, Inc. Substrate pretreatment for subsequent high temperature group III depositions
TWI467635B (en) * 2011-02-17 2015-01-01 索泰克公司 Three-five semiconductor structure with reduced recess defect and method for forming the same
JP5433609B2 (en) * 2011-03-03 2014-03-05 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
JP2012186195A (en) * 2011-03-03 2012-09-27 Toshiba Corp Semiconductor light-emitting element and method of manufacturing the same
KR20130014849A (en) * 2011-08-01 2013-02-12 삼성전자주식회사 Shottky barrier diode and method for manufacturing the same
US8946788B2 (en) 2011-08-04 2015-02-03 Avogy, Inc. Method and system for doping control in gallium nitride based devices
KR101984698B1 (en) 2012-01-11 2019-05-31 삼성전자주식회사 Substrate structure, semiconductor device fabricated from the same and fabricating method thereof
US11025029B2 (en) 2015-07-09 2021-06-01 International Business Machines Corporation Monolithic III-V nanolaser on silicon with blanket growth
KR101996424B1 (en) * 2017-04-24 2019-07-04 아주대학교산학협력단 Laser diode and manufacturing method thereof
DE102019111598A1 (en) * 2019-05-06 2020-11-12 Aixtron Se Process for depositing a semiconductor layer system containing gallium and indium
JP7380423B2 (en) * 2020-05-27 2023-11-15 豊田合成株式会社 Manufacturing method of semiconductor device
CN118147757A (en) 2022-11-30 2024-06-07 中微半导体设备(上海)股份有限公司 Method for growing high-aluminum III-group nitride, MOCVD equipment and application in preparing ultraviolet LED

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050283016A1 (en) * 2004-06-18 2005-12-22 Shin-Etsu Chemical Co., Ltd. High-purity trimethylaluminum and purification method of crude trimethylaluminum
US20060047132A1 (en) * 2004-09-02 2006-03-02 Rohm And Haas Electronic Materials Llc Method
EP1633003A2 (en) * 2004-09-01 2006-03-08 Sumitomo Electric Industries, Ltd. GaN epitaxial substrate and semiconductor element
US20060075959A1 (en) * 2004-10-13 2006-04-13 Sumitomo Chemical Company, Limited Trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgallium

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62132888A (en) * 1985-12-03 1987-06-16 Sumitomo Chem Co Ltd Purification of organometallic compound
US5573742A (en) * 1987-10-29 1996-11-12 Martin Marietta Corporation Method for the preparation of high purity aluminum nitride
JP2001338886A (en) * 2000-03-24 2001-12-07 Ngk Insulators Ltd Semiconductor device, manufacturing method thereof, and substrate for semiconductor device used therefor
ATE448589T1 (en) * 2001-04-12 2009-11-15 Nichia Corp SEMICONDUCTOR ELEMENT MADE OF GALLIUM NITRIDE COMPOSITION
CN1228478C (en) * 2002-11-13 2005-11-23 中国科学院物理研究所 Method for preparing gallium nitride single crystal film
CN1242091C (en) * 2002-12-20 2006-02-15 上海北大蓝光科技有限公司 Method for growing epitaxial chip of nitride LED structure by MOCVD
US7390360B2 (en) * 2004-10-05 2008-06-24 Rohm And Haas Electronic Materials Llc Organometallic compounds
JP4984557B2 (en) * 2005-03-04 2012-07-25 住友電気工業株式会社 Method for manufacturing vertical gallium nitride semiconductor device, method for manufacturing epitaxial substrate
JP4784729B2 (en) 2005-06-09 2011-10-05 信越化学工業株式会社 Method for producing trimethylgallium
US7341932B2 (en) * 2005-09-30 2008-03-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Schottky barrier diode and method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050283016A1 (en) * 2004-06-18 2005-12-22 Shin-Etsu Chemical Co., Ltd. High-purity trimethylaluminum and purification method of crude trimethylaluminum
EP1633003A2 (en) * 2004-09-01 2006-03-08 Sumitomo Electric Industries, Ltd. GaN epitaxial substrate and semiconductor element
US20060047132A1 (en) * 2004-09-02 2006-03-02 Rohm And Haas Electronic Materials Llc Method
US20060075959A1 (en) * 2004-10-13 2006-04-13 Sumitomo Chemical Company, Limited Trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgallium

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DUPUIS R D: "Epitaxial growth of III-V nitride semiconductors by metalorganic chemical vapor deposition", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 178, no. 1-2, 1997 - 1997, pages 56 - 73, XP004084975, ISSN: 0022-0248, DOI: 10.1016/S0022-0248(97)00079-1 *
VOSSEN, KERN: "Thin Film Processes II", 1991, ACADEMIC PRESS, ISBN: 0-12-728251-3, article KUECH, JENSEN: "OMVPE of Compound Semiconductors", pages: 369 - 432, XP009169713 *

Also Published As

Publication number Publication date
TWI381072B (en) 2013-01-01
TW200848559A (en) 2008-12-16
US20080251801A1 (en) 2008-10-16
KR20080092253A (en) 2008-10-15
EP1981069A2 (en) 2008-10-15
CN101311380A (en) 2008-11-26
JP2008263023A (en) 2008-10-30
CN101311380B (en) 2011-10-05

Similar Documents

Publication Publication Date Title
CN1200466C (en) Group III nitride compound semiconductor device
US8652958B2 (en) Vertical deep ultraviolet light emitting diodes
US7180088B2 (en) Nitride based semiconductor light-emitting device
US8952243B2 (en) Stacked structure including vertically grown semiconductor, p-n junction device including the stacked structure, and method of manufacturing thereof
EP1876270A4 (en) METHOD FOR DRAWING GAN MONOCRYSTAL, METHOD FOR PREPARING GAN SUBSTRATE, METHOD FOR MANUFACTURING GAN-BASED ELEMENT, AND GAN-BASED ELEMENT
IL196477A0 (en) Method of fabricating semiconductor devices on a group iv substrate with controlled interface properties and diffusion tails
EP1598450A4 (en) B-Ga2o3 MONOCRYSTALLINE GROWTH PROCESS, THIN FILM MONOCRYSTALLINE GROWTH METHOD, gA2O3 ELECTROLUMINESCENT DEVICE AND METHOD OF MANUFACTURING SAME
EP2506321A1 (en) Light-emitting diode chip
KR20180051893A (en) Encapsulating material by using h-BN as protective layer and preparing method thereof
CN101388337A (en) A method for growing high-quality single-crystal indium nitride thin films with double buffer layers
KR20140069036A (en) Method for producing an optoelectronic semiconductor chip and corresponding optoelectronic semiconductor chip
Sankaranarayanan et al. Catalytic growth of gallium nitride nanowires on wet chemically etched substrates by chemical vapor deposition
JP2005159341A5 (en)
US9570662B2 (en) Method of encapsulating an optoelectronic device and light-emitting diode chip
CN105720154B (en) A kind of LED epitaxial wafer and its manufacturing method
CN107808912B (en) A kind of nitride light-emitting diode and preparation method thereof
TW200603267A (en) Method for making compound semiconductor and method for making semiconductor device
KR101433895B1 (en) Method of manufacturing nanowires
GB2429581A (en) Compound semiconductor light-emitting device and production method thereof
EP2101361A3 (en) Semiconductor light emitting device and method for manufacturing same, and epitaxial wafer
EP2492951A3 (en) Nitride based light emitting device using silicon substrate and method of manufacturing the same
JP2719870B2 (en) GaP-based light emitting device substrate and method of manufacturing the same
JP5730608B2 (en) Multilayer substrate and manufacturing method thereof
CN101397693B (en) Method for high quality single crystal indium nitride film growth
TW200802981A (en) III-nitride semiconductor light emitting device and method for manufacturing the same

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20080225

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA MK RS

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA MK RS

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/205 20060101AFI20130523BHEP

Ipc: H01L 21/02 20060101ALI20130523BHEP

Ipc: H01L 29/872 20060101ALN20130523BHEP

Ipc: C23C 16/30 20060101ALI20130523BHEP

AKY No designation fees paid
REG Reference to a national code

Ref country code: DE

Ref legal event code: R108

REG Reference to a national code

Ref country code: DE

Ref legal event code: R108

Effective date: 20140305

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20140103