EP1981069A3 - Method of producing group III-V compound semiconductor, Schottky barrier diode, light emitting diode, laser diode, and method of fabricating the diodes - Google Patents

Method of producing group III-V compound semiconductor, Schottky barrier diode, light emitting diode, laser diode, and method of fabricating the diodes Download PDF

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Publication number
EP1981069A3
EP1981069A3 EP08003392.1A EP08003392A EP1981069A3 EP 1981069 A3 EP1981069 A3 EP 1981069A3 EP 08003392 A EP08003392 A EP 08003392A EP 1981069 A3 EP1981069 A3 EP 1981069A3
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EP
European Patent Office
Prior art keywords
group iii
diode
compound semiconductor
fabricating
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08003392.1A
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German (de)
French (fr)
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EP1981069A2 (en
Inventor
Masaki Ueno
Yu Saitoh
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of EP1981069A2 publication Critical patent/EP1981069A2/en
Publication of EP1981069A3 publication Critical patent/EP1981069A3/en
Withdrawn legal-status Critical Current

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    • HELECTRICITY
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02576N-type
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303Nitrides
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    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
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    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66196Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
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    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66446Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/778Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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    • H01L33/0075Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
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    • H01S5/34333Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

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Abstract

There are provided a method of producing a group III-V compound semiconductor, a Schottky barrier diode, a light emitting diode, a laser diode and methods of fabricating the diodes, that can achieve a reduced n type carrier density. The method of producing a group III-V compound semiconductor is a method of producing the compound semiconductor by metal organic chemical vapor deposition employing a material containing a group III element. Initially the step of preparing a seed substrate (S10) is performed. Then the step of growing a group III-V compound semiconductor on the seed substrate is performed by employing as a group III element-containing material an organic metal containing at most 0.01 ppm of silicon, at most 10 ppm of oxygen and less than 0.04 ppm of germanium (S20).
EP08003392.1A 2007-04-11 2008-02-25 Method of producing group III-V compound semiconductor, Schottky barrier diode, light emitting diode, laser diode, and method of fabricating the diodes Withdrawn EP1981069A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007104027A JP2008263023A (en) 2007-04-11 2007-04-11 Manufacturing method of group iii-v compound semiconductor, schottky barrier diode, light-emitting diode, laser diode and manufacturing method of these

Publications (2)

Publication Number Publication Date
EP1981069A2 EP1981069A2 (en) 2008-10-15
EP1981069A3 true EP1981069A3 (en) 2013-06-26

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EP08003392.1A Withdrawn EP1981069A3 (en) 2007-04-11 2008-02-25 Method of producing group III-V compound semiconductor, Schottky barrier diode, light emitting diode, laser diode, and method of fabricating the diodes

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US (1) US20080251801A1 (en)
EP (1) EP1981069A3 (en)
JP (1) JP2008263023A (en)
KR (1) KR20080092253A (en)
CN (1) CN101311380B (en)
TW (1) TWI381072B (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1758171A4 (en) * 2005-03-04 2009-04-29 Sumitomo Electric Industries Vertical gallium nitride semiconductor device and epitaxial substrate
EP2169713A4 (en) * 2007-07-17 2012-06-06 Sumitomo Electric Industries Method for manufacturing electronic device, method for manufacturing epitaxial substrate, iii nitride semiconductor element and gallium nitride epitaxial substrate
US20090149008A1 (en) * 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
US20110180133A1 (en) * 2008-10-24 2011-07-28 Applied Materials, Inc. Enhanced Silicon-TCO Interface in Thin Film Silicon Solar Cells Using Nickel Nanowires
JP4375497B1 (en) 2009-03-11 2009-12-02 住友電気工業株式会社 Group III nitride semiconductor device, epitaxial substrate, and method of manufacturing group III nitride semiconductor device
WO2010124261A2 (en) 2009-04-24 2010-10-28 Applied Materials, Inc. Substrate pretreatment for subsequent high temperature group iii depositions
TWI467635B (en) * 2011-02-17 2015-01-01 Soitec Silicon On Insulator Iii-v semiconductor structures with diminished pit defects and methods for forming the same
JP2012186195A (en) * 2011-03-03 2012-09-27 Toshiba Corp Semiconductor light-emitting element and method of manufacturing the same
JP5433609B2 (en) 2011-03-03 2014-03-05 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
KR20130014849A (en) * 2011-08-01 2013-02-12 삼성전자주식회사 Shottky barrier diode and method for manufacturing the same
US8946788B2 (en) 2011-08-04 2015-02-03 Avogy, Inc. Method and system for doping control in gallium nitride based devices
KR101984698B1 (en) 2012-01-11 2019-05-31 삼성전자주식회사 Substrate structure, semiconductor device fabricated from the same and fabricating method thereof
US11025029B2 (en) 2015-07-09 2021-06-01 International Business Machines Corporation Monolithic III-V nanolaser on silicon with blanket growth
KR101996424B1 (en) * 2017-04-24 2019-07-04 아주대학교산학협력단 Laser diode and manufacturing method thereof
DE102019111598A1 (en) * 2019-05-06 2020-11-12 Aixtron Se Process for depositing a semiconductor layer system containing gallium and indium
JP7380423B2 (en) * 2020-05-27 2023-11-15 豊田合成株式会社 Manufacturing method of semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050283016A1 (en) * 2004-06-18 2005-12-22 Shin-Etsu Chemical Co., Ltd. High-purity trimethylaluminum and purification method of crude trimethylaluminum
US20060047132A1 (en) * 2004-09-02 2006-03-02 Rohm And Haas Electronic Materials Llc Method
EP1633003A2 (en) * 2004-09-01 2006-03-08 Sumitomo Electric Industries, Ltd. GaN epitaxial substrate and semiconductor element
US20060075959A1 (en) * 2004-10-13 2006-04-13 Sumitomo Chemical Company, Limited Trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgallium

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62132888A (en) * 1985-12-03 1987-06-16 Sumitomo Chem Co Ltd Purification of organometallic compound
US5573742A (en) * 1987-10-29 1996-11-12 Martin Marietta Corporation Method for the preparation of high purity aluminum nitride
JP2001338886A (en) * 2000-03-24 2001-12-07 Ngk Insulators Ltd Semiconductor device, its manufacturing method and substrate for semiconductor device used for the same
CA2444273C (en) * 2001-04-12 2012-05-22 Nichia Corporation Gallium nitride semiconductor device
CN1228478C (en) * 2002-11-13 2005-11-23 中国科学院物理研究所 Method for preparing gallium nitride single crystal film
CN1242091C (en) * 2002-12-20 2006-02-15 上海北大蓝光科技有限公司 Method for growing epitaxial chip of nitride LED structure by MOCVD
US7390360B2 (en) * 2004-10-05 2008-06-24 Rohm And Haas Electronic Materials Llc Organometallic compounds
JP4984557B2 (en) * 2005-03-04 2012-07-25 住友電気工業株式会社 Method for manufacturing vertical gallium nitride semiconductor device, method for manufacturing epitaxial substrate
JP4784729B2 (en) 2005-06-09 2011-10-05 信越化学工業株式会社 Method for producing trimethylgallium
US7341932B2 (en) * 2005-09-30 2008-03-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Schottky barrier diode and method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050283016A1 (en) * 2004-06-18 2005-12-22 Shin-Etsu Chemical Co., Ltd. High-purity trimethylaluminum and purification method of crude trimethylaluminum
EP1633003A2 (en) * 2004-09-01 2006-03-08 Sumitomo Electric Industries, Ltd. GaN epitaxial substrate and semiconductor element
US20060047132A1 (en) * 2004-09-02 2006-03-02 Rohm And Haas Electronic Materials Llc Method
US20060075959A1 (en) * 2004-10-13 2006-04-13 Sumitomo Chemical Company, Limited Trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgallium

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DUPUIS R D: "Epitaxial growth of III-V nitride semiconductors by metalorganic chemical vapor deposition", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 178, no. 1-2, 1997 - 1997, pages 56 - 73, XP004084975, ISSN: 0022-0248, DOI: 10.1016/S0022-0248(97)00079-1 *
VOSSEN, KERN: "Thin Film Processes II", 1991, ACADEMIC PRESS, ISBN: 0-12-728251-3, article KUECH, JENSEN: "OMVPE of Compound Semiconductors", pages: 369 - 432, XP009169713 *

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