EP1981069A3 - Method of producing group III-V compound semiconductor, Schottky barrier diode, light emitting diode, laser diode, and method of fabricating the diodes - Google Patents

Method of producing group III-V compound semiconductor, Schottky barrier diode, light emitting diode, laser diode, and method of fabricating the diodes Download PDF

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Publication number
EP1981069A3
EP1981069A3 EP08003392.1A EP08003392A EP1981069A3 EP 1981069 A3 EP1981069 A3 EP 1981069A3 EP 08003392 A EP08003392 A EP 08003392A EP 1981069 A3 EP1981069 A3 EP 1981069A3
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EP
European Patent Office
Prior art keywords
group iii
diode
compound semiconductor
fabricating
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08003392.1A
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German (de)
French (fr)
Other versions
EP1981069A2 (en
Inventor
Masaki Ueno
Yu Saitoh
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of EP1981069A2 publication Critical patent/EP1981069A2/en
Publication of EP1981069A3 publication Critical patent/EP1981069A3/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/66409—Unipolar field-effect transistors
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    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
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    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
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    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

There are provided a method of producing a group III-V compound semiconductor, a Schottky barrier diode, a light emitting diode, a laser diode and methods of fabricating the diodes, that can achieve a reduced n type carrier density. The method of producing a group III-V compound semiconductor is a method of producing the compound semiconductor by metal organic chemical vapor deposition employing a material containing a group III element. Initially the step of preparing a seed substrate (S10) is performed. Then the step of growing a group III-V compound semiconductor on the seed substrate is performed by employing as a group III element-containing material an organic metal containing at most 0.01 ppm of silicon, at most 10 ppm of oxygen and less than 0.04 ppm of germanium (S20).
EP08003392.1A 2007-04-11 2008-02-25 Method of producing group III-V compound semiconductor, Schottky barrier diode, light emitting diode, laser diode, and method of fabricating the diodes Withdrawn EP1981069A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007104027A JP2008263023A (en) 2007-04-11 2007-04-11 Manufacturing method of group iii-v compound semiconductor, schottky barrier diode, light-emitting diode, laser diode and manufacturing method of these

Publications (2)

Publication Number Publication Date
EP1981069A2 EP1981069A2 (en) 2008-10-15
EP1981069A3 true EP1981069A3 (en) 2013-06-26

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EP08003392.1A Withdrawn EP1981069A3 (en) 2007-04-11 2008-02-25 Method of producing group III-V compound semiconductor, Schottky barrier diode, light emitting diode, laser diode, and method of fabricating the diodes

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Country Link
US (1) US20080251801A1 (en)
EP (1) EP1981069A3 (en)
JP (1) JP2008263023A (en)
KR (1) KR20080092253A (en)
CN (1) CN101311380B (en)
TW (1) TWI381072B (en)

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CN101689523B (en) * 2007-07-17 2012-02-22 住友电气工业株式会社 Method for manufacturing electronic device, method for manufacturing epitaxial substrate, iii nitride semiconductor element and gallium nitride epitaxial substrate
US20090149008A1 (en) * 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
US20110180133A1 (en) * 2008-10-24 2011-07-28 Applied Materials, Inc. Enhanced Silicon-TCO Interface in Thin Film Silicon Solar Cells Using Nickel Nanowires
JP4375497B1 (en) 2009-03-11 2009-12-02 住友電気工業株式会社 Group III nitride semiconductor device, epitaxial substrate, and method of manufacturing group III nitride semiconductor device
KR20120003493A (en) 2009-04-24 2012-01-10 어플라이드 머티어리얼스, 인코포레이티드 Substrate pretreatment for subsequent high temperature group iii depositions
TWI467635B (en) * 2011-02-17 2015-01-01 Soitec Silicon On Insulator Iii-v semiconductor structures with diminished pit defects and methods for forming the same
JP5433609B2 (en) 2011-03-03 2014-03-05 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
JP2012186195A (en) 2011-03-03 2012-09-27 Toshiba Corp Semiconductor light-emitting element and method of manufacturing the same
KR20130014849A (en) * 2011-08-01 2013-02-12 삼성전자주식회사 Shottky barrier diode and method for manufacturing the same
US8946788B2 (en) * 2011-08-04 2015-02-03 Avogy, Inc. Method and system for doping control in gallium nitride based devices
KR101984698B1 (en) 2012-01-11 2019-05-31 삼성전자주식회사 Substrate structure, semiconductor device fabricated from the same and fabricating method thereof
US11025029B2 (en) 2015-07-09 2021-06-01 International Business Machines Corporation Monolithic III-V nanolaser on silicon with blanket growth
KR101996424B1 (en) * 2017-04-24 2019-07-04 아주대학교산학협력단 Laser diode and manufacturing method thereof
DE102019111598A1 (en) * 2019-05-06 2020-11-12 Aixtron Se Process for depositing a semiconductor layer system containing gallium and indium
JP7380423B2 (en) * 2020-05-27 2023-11-15 豊田合成株式会社 Manufacturing method of semiconductor device

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