EP1943561A1 - Systeme de lithographie et procede de projection - Google Patents

Systeme de lithographie et procede de projection

Info

Publication number
EP1943561A1
EP1943561A1 EP20060783923 EP06783923A EP1943561A1 EP 1943561 A1 EP1943561 A1 EP 1943561A1 EP 20060783923 EP20060783923 EP 20060783923 EP 06783923 A EP06783923 A EP 06783923A EP 1943561 A1 EP1943561 A1 EP 1943561A1
Authority
EP
European Patent Office
Prior art keywords
light
writing
mirror
beams
free space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP20060783923
Other languages
German (de)
English (en)
Inventor
Marco Jan Jaco Wieland
Stijn Willem Karel Herman Steenbrink
Guido De Boer
Remco Jager
Aukje Arianne Annette Kastelijn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mapper Lithopraphy IP BV
Original Assignee
Mapper Lithopraphy IP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithopraphy IP BV filed Critical Mapper Lithopraphy IP BV
Publication of EP1943561A1 publication Critical patent/EP1943561A1/fr
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam

Definitions

  • the present invention relates to a lithography system for projecting an image pattern on to a target surface such as a wafer, wherein control data are coupled to a control unit for controlling exposure projections by means of light signals, thereby using a free space interconnect, in particular to a system wherein such control unit is included in close proximity to or within the projection space, more in particular to a multi-beam mask-less lithography system.
  • the current invention in principle relates all the same to charged particle and to light projection based lithography systems
  • the known system comprises a computer system for providing pattern data of an image to be projected by a so called beam column for projecting charged particles, in particular electrons on to a target surface such as a wafer and an inspection tool.
  • the beam column comprises a vacuum chamber in which one or more charged particle sources are accommodated, which emit particles in a manner known per se, using amongst others an electric field for withdrawing particles from said source or sources .
  • the beam column further comprises charged particle optic means for converging an emitted bundle of charged particles, for splitting up the same into a multiplicity of charged particle beams, further referred to as writing beams, and forming exposure projections.
  • a control unit for controlling the exposure projections is included in the form of charged particle optical means for shaping or directing such writing beams, here showing a blanker optical part or modulator array comprising blanking deflectors, as well as a writing deflector array for deflecting writing beams for the purpose writing of a pattern using writing beams not blanked by said blanking deflectors.
  • the blanker optic part deflects, depending on a computer provided signal a writing beam away from a straight trajectory parallel with other writing beams, to such amount of inclination that no part of the writing beam effectively passes the opening provided for each writing beam in a stopping plate, thereby effecting an "off" state of the particular writing beam.
  • All optic parts in the beam column are shaped with an array of openings, the openings of the separate parts being mutually aligned so as to enable the passage of a writing beam in said column towards said target surface in a controlled manner.
  • the known mask-less multi- beam system is further typically provided with blanking deflectors having both the source and the target surface arranged in a conjugate plane thereof, i.e. it may easily be combined with the subject matter of WO2004/0819010. In this manner the lithography system favourably realizes an optimal brightness of the source on the target surface. Also, in this manner a minimum amount of space is required for the blanker array.
  • the target surface for a writing beam is held on a stage included in the beam column.
  • the stage induced by an electronic control unit of the system, moves together with said surface perpendicularly relative to said emitted writing bundles, preferably solely in a direction transverse to a direction in which such writing bundles are finally deflected for writing purposes.
  • Writing of a pattern by the known lithography system is thus effected by the combination of relative movement of the target surface and a ' timed "on” and “off” switching of a writing beam by said blanker optics upon signalling by said control unit, more in particular by a so-called pattern streamer thereof.
  • Signalling for on/off switching, i.e. modulating of a writing beam is in the related known system performed
  • the blanker optics thereto comprises light sensitive parts such as photodiodes, for receiving light signals, which are converted into electronic signals, e.g. applying the measures as provided by the international patent publication WO2005010618 in the name of Applicant.
  • the light signals are produced by electronic to light conversion by said control unit for the system, and are transported to the beam column by means an optical carrier, in casu a bundle of glass fibres that finally projects from "e.g. a transparent part of the vacuum boundary".
  • Light signals are projected to said blanker optics using a lens system, which in the known system is disclosed to be comprised of a converging lens located in between a transmitter part and the light sensitive parts of deflectors included in the blanker optic part.
  • the arrangement of deflector, light sensitive parts and light to electric conversion is produced using both so-called MEMS- and (Bi-) CMOS-technology.
  • MEMS- and (Bi-) CMOS-technology So as to prevent the use of mirroring parts, in the related known system the signalling light beams are projected from a far upper side relative to the blanking optic part, so as to achieve an angle of incidence of the pattern information carrying light signals on the light sensitive elements, as small as possible.
  • the publication in which the related embodiment is comprised teaches however, that other locations of projection may be realised when using mirrors for correcting the larger angles of incidence occurring at most of such alternative locations.
  • the present invention therefore seeks to improve the known mask-less multi-beam lithography system in general, however, in particular as to the light optics system (LOS) thereof.
  • the present invention further has for an object to improve the lithography system by either by increasing the light transmission efficiency thereof and/or by reducing the chance of aberrations in the light optic part thereof .
  • a said free space optical interconnect of such systems comprises a holey, i.e. holed mirror incorporated in the projection trajectory of said plurality of writing beams, wherein said mirror is arranged relative to said emitter part and said light sensitive elements to realize an on-axis, i.e. an at least virtually perpendicular incidence of said light beams on said light sensitive elements, said mirror being provided with at least one hole allowing passage of one or more of said writing beams.
  • a lithography system in which an electronic image pattern is delivered to a exposure tool for projecting an image to a target surface, said exposure tool comprising a control unit for controlling exposure projections, said control unit at least partly being included in the projection space of the said exposure tool, and being provided with control data by means of light signals, said light signals being coupled in to said control unit by using a free space optical interconnect comprising modulated light beams that are emitted to a light sensitive part of said control unit, wherein the modulated light beams are coupled in to said light sensitive part using holed, alternatively denoted holey mirror for on axis incidence of said light beams on said light sensitive part, the one or more holes of said mirror being provided for passage of said exposure projections.
  • Using a system according to the present invention minimizes the presence of aberrations by remaining on-axis at projection of light signals, without, at least noticeably interfering with, i.e. hampering the exposure projections of the exposure tool of the lithography system.
  • the invention is realized in a new, in advance expectedly impossible, though at hindsight relatively simple to perform highly favorable manner.
  • Figure 1 is a schematic representation of a the prior art lithography system from which the present invention departs;
  • Figure 2 is a schematic representation of an
  • Figure 3 is a schematic representation of a structural arrangement for the light optic system of figure 2 in the lithography system.
  • Figure 4 is a schematic representation of an improved light optics system for the known lithography system according to a second embodiment.
  • Figure 1 represents an overall side view of the prior art lithography system that is improved by the current invention, in which at light emitter, or modulation means ends 2 of a light carrier Fb, in case embodied by optical fibers Fb, light beams 8 are projected on modulator array 24 using an optical system, represented by lenses 54. Modulated light beams 8 from each optical fiber end are projected on a light sensitive element, i.e. light sensitive part of a modulator of said modulator array 24. In particular, ends of the fibers Fb are projected on the modulator array. Each light beam 8 holds a part of the pattern data for controlling one or more modulators, the modulation thereof forming a signaling system for transferring pattern data based modulator array instructions for realizing a desired image on said target surface .
  • a light sensitive element i.e. light sensitive part of a modulator of said modulator array 24.
  • ends of the fibers Fb are projected on the modulator array.
  • Each light beam 8 holds a part of the pattern data for controlling one or more
  • Figure 1 also shows a beam generator 50, which generates a diverging charged particle beam 51, in this example an electron beam.
  • a beam generator 50 which generates a diverging charged particle beam 51, in this example an electron beam.
  • this beam 51 is shaped into a parallel beam.
  • the parallel beam 51 impinges on beam splitter 53, resulting in a plurality of substantially parallel writing beams 22, directed to modulation array 24, alternatively denoted blanker array.
  • the deflected writing beams 27 are stopped.
  • the writing beams 28 passing stop array 25 are deflected at deflector array 56 in a first writing direction, and the cross section of each beamlet is reduced using projection lenses 55.
  • the target surface 49 moves with respect to the rest of the system in a second writing direction.
  • the lithography system furthermore comprises a control unit 60 comprising data storage 61, a read out unit 62 and data converter 63, including a so-called pattern streamer.
  • the control unit 60 is located remote from the rest of the system, for instance outside the inner part of a olean room. Using optical fibers Fb, modulated light beams 8 holding pattern data are transmitted to a projector
  • Figure 2 figuratively represents the light optic system of the improved lithography system according to a first embodiment. It entails the use of a holey mirror 104, which is applied for realizing an in-axis incidence of light beams 8 on the light sensitive elements of modulator array 24.
  • the holey mirror thereto comprises one relatively large hole through which all for blanking deflected writing beams 27 and all undeflected writing beams 28 may pass, or a plurality of relatively small holes 105, one for each deflected or undeflected writing beam.
  • the mirror 104 comprises a substantially flat reflecting surface which is included in the system under angle of 45 degrees, so that while maintaining perpendicular incidence of light beams 8 on modulator 24, an axially minimal amount of space is required for the light optic system. With such minimized axial space requirement, design freedom is attained for locating the LOS either to the upper, or to the bottom side of the modulator array 24 , which in turn enhances manufacturing freedom of the array 24, which is a highly complex part, manufactured at using CMOS and MEMS technology.
  • a. focusing lens 106 preferably embodied by a lens system performing a focusing function, is included close as possible to the latter, at least closer to the mirror than to the fiber ends 2. By locating said focusing lens 106 in close proximity of the holey mirror 104, it is favorably realized that the holey mirror can be applied without undue loss in light signal intensity, which might otherwise be due to the presence of holes 105.
  • the array of fiber ends 2 are in accordance with the present invention completed with a micro lens array 101, forming a virtual fiber array 103, in fact an array of spots in the focal plane for the micro lenses 101.
  • a micro lens of the micro lens array 101 here according to preferred embodiment performs a magnifying, function on the light signals transmitted by a particular fiber of the fiber array Fb.
  • the lens system according to the present invention thus sets forth a dual image system comprising a magnification of each signal by means of a micro-lens, and a subsequent focusing of the signal by means of said lens 106, common to all of the emitted light signals.
  • the pitch of the ends of fibers Fb is incompatible with, in particular larger than the pitch of the light sensitive elements on the modulator array 24, unless undue, and consequently uneconomic manufacturing efforts are made.
  • the present dual lens and dual imaging system independence in setting both parameters is attained in a favorable manner.
  • Figure 3 represents the arrangement for preferred incorporation of the light optics system described along figure 2, in the lithography system, according to the invention. It shows a holder 24S for the above mentioned blanker or modulator array 24 , by means of which holder the modulator array 24 is placed in a charged particle column. Such charged particle column is, together with the holder for holding a wafer or other kind of target surface, included in a housing Hv by means of which a vacuum condition for said column and target stage is realized.
  • the array of fibers Fb is fed through an opening in a demountable part of said housing Hv, here by using a significant amount of ⁇ vacuum compatible sealing material for realizing an air tight sealing of the fibres in said opening.
  • An inner housing end part Fbv of said fibers is thereby also to a significant extend . secured from outside mechanical impulses that might act thereon.
  • the end part Fbv of the array of fibers is at its end 2 further secured mechanically to a housing Hl for the lens and mirror part of the light optics system.
  • the housing Hl is secured to said modulator array holder 24S.
  • the array holder 24S is connected to a not depicted frame for elements such as collimator 52, and splitter 53, and as further discussed under figure 1, constituting the charged particle column.
  • the holey mirror 104 covers the entire area of a modulator array, while in the same manner the lens 106 covers the entire area of the tilted mirror 104.
  • the lens 106 is thereby incorporated axially in close proximity to the holder 24S.
  • Figure 4 figuratively represents the light optic system of the improved lithography system according to a second embodiment. It entails the use of a holey mirror 107, which is applied for realizing an in-axis incidence of light beams 8 on the light sensitive elements of modulator array 24.
  • the holey mirror thereto comprises one relatively large hole 108 through which all for blanking deflected writing beams 27 and all undeflected writing beams 28 may pass, or a plurality of relatively small holes, one for each deflected or undeflected writing beam.
  • the mirror 104 comprises a focussing reflecting surface, said reflecting surface in particular is placed at an angle for reflecting the incident light beams 8 towards the modulator 24 and said reflecting surface in particular being a concave surface for simultaneous focussing the incident light beams 8 onto the modulator 24.
  • a focusing lens 106 may be omitted. It is favourably realized that any loss in light signal intensity, in particular due to reflections at the surfaces of the focussing lens 106, can be further reduced.
  • the focussing element in this second embodiment in particular the concave reflecting surface of the holey mirror 107, can be much closer to the modulator array 24, than the lens 106 in the first embodiment. Due to this close distance, the light optical system of this second embodiment can be designed with a larger numerical aperture and thus with an increased resolving power of the light optical system.
  • the array of fiber ends 2 are completed with a micro lens array 101, forming a virtual fiber array 103, in fact an array of spots in the focal plane for the micro lenses 101.
  • a micro lens of the micro lens array 101 performs a magnifying function on the light signals transmitted by a particular fiber of the fiber array Fb.
  • the concave reflecting surface of the holey mirror 107 according to the second embodiment thus sets forth a dual image system comprising a magnification of each signal by means of a micro-lens, and a subsequent focusing of the signal by means of said concave reflecting surface of the holey mirror 107, common to all of the emitted light signals.
  • a holey mirror with a focussing reflecting surface 107 as shown in figure 4 may also be combined with a .focussing lens 106 as shown in figure 3.
  • the focussing element 106, 107 comprises two optical parts and both optical parts may contribute to the focussing effect and/or can be used to further reduce optical aberrations.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)

Abstract

Cette invention concerne un système de lithographie dans lequel une forme d’image électronique est fournie à un outil d’exposition pour projeter une image sur une surface cible, cet outil comprenant une unité de commande qui commande les projections d’exposition, ladite unité figurant au moins en partie dans l’espace de projection de l’outil d’exposition, et étant alimenté en données de commande au moyen de signaux optiques, ces signaux étant couplés à l’unité de commande à l’aide d’une interconnexion optique dans l’espace libre comprenant des faisceaux optiques modulés qui sont émis vers une zone photosensible de l’unité de commande, ces faisceaux étant couplés à la zone photosensible au moyen d’un miroir perforé pour une incidence axiale des faisceaux sur la zone photosensible, le ou les orifices du miroir étant agencés pour le passage des projections d’exposition.
EP20060783923 2005-09-16 2006-09-14 Systeme de lithographie et procede de projection Ceased EP1943561A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US71785605P 2005-09-16 2005-09-16
NL1029973 2005-09-16
PCT/NL2006/000458 WO2007032671A1 (fr) 2005-09-16 2006-09-14 Système de lithographie et procédé de projection

Publications (1)

Publication Number Publication Date
EP1943561A1 true EP1943561A1 (fr) 2008-07-16

Family

ID=37421100

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20060783923 Ceased EP1943561A1 (fr) 2005-09-16 2006-09-14 Systeme de lithographie et procede de projection

Country Status (4)

Country Link
EP (1) EP1943561A1 (fr)
JP (2) JP4981806B2 (fr)
KR (1) KR101367499B1 (fr)
WO (1) WO2007032671A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090121629A (ko) 2008-05-22 2009-11-26 삼성전자주식회사 태양전지 셀 및 이를 이용하는 태양전지 모듈
US8604411B2 (en) 2010-11-13 2013-12-10 Mapper Lithography Ip B.V. Charged particle beam modulator
WO2018063325A1 (fr) * 2016-09-30 2018-04-05 Intel Corporation Rotation de réseau d'ouvertures pour améliorer la marge de traitement de faisceau électronique

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JPH06124884A (ja) * 1992-10-12 1994-05-06 Mitsubishi Electric Corp 電子線露光装置
JP4375826B2 (ja) * 1998-04-07 2009-12-02 株式会社ニコン 直筒型反射屈折光学系、走査型露光装置及び走査露光方法
JP2001126972A (ja) * 1999-10-25 2001-05-11 Hitachi Ltd 電子ビーム描画装置および電子ビームを用いた描画方法
EP2302458B1 (fr) * 2002-10-25 2016-09-14 Mapper Lithography Ip B.V. Système de lithographie
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Also Published As

Publication number Publication date
JP5694207B2 (ja) 2015-04-01
JP2009509329A (ja) 2009-03-05
JP4981806B2 (ja) 2012-07-25
JP2012129532A (ja) 2012-07-05
KR101367499B1 (ko) 2014-02-25
KR20080047615A (ko) 2008-05-29
WO2007032671A1 (fr) 2007-03-22

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