EP1929485B1 - Method for the production of an electrical component having little tolerance - Google Patents

Method for the production of an electrical component having little tolerance Download PDF

Info

Publication number
EP1929485B1
EP1929485B1 EP06791394.7A EP06791394A EP1929485B1 EP 1929485 B1 EP1929485 B1 EP 1929485B1 EP 06791394 A EP06791394 A EP 06791394A EP 1929485 B1 EP1929485 B1 EP 1929485B1
Authority
EP
European Patent Office
Prior art keywords
component
electrode
area
layer
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP06791394.7A
Other languages
German (de)
French (fr)
Other versions
EP1929485A1 (en
Inventor
Javier Arrimadas-Matias
Gerald Kloiber
Werner Franz KRAUSS
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
Epcos AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos AG filed Critical Epcos AG
Publication of EP1929485A1 publication Critical patent/EP1929485A1/en
Application granted granted Critical
Publication of EP1929485B1 publication Critical patent/EP1929485B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/006Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient

Definitions

  • a method for producing an electrical component is described.
  • NTC Negative Temperature Coefficient
  • An object to be solved is to provide a method for producing an electrical component with low tolerances.
  • the component may in particular be a resistance component.
  • the device is at least one functional unit such.
  • the component comprises a base body with at least two electrodes.
  • the main body is preferably a sintered ceramic body.
  • the main body of the device is prepared starting from a substrate which is singulated to form a plurality of basic bodies.
  • the actual parameters (in particular the specific resistance and the thickness) of the substrate, which later forms the main body of a component to be produced, can each differ from a corresponding predetermined value for manufacturing reasons, which was calculated for the electrical size of the component to be achieved. This has the consequence that the actual value of the electrical size of the device deviates from the specified setpoint.
  • the area of a device region may be adjusted at the actual parameters of the substrate to achieve the electrical size setpoint. For example, with an actual substrate thickness which is higher relative to the nominal value of the substrate thickness, the area of the component regions may be smaller than the corresponding nominal value of the surface and vice versa, the area of the device regions may be greater for a substrate thickness smaller in relation to the nominal value of the substrate thickness. Due to the adaptation of the area of the component regions, in spite of the manufacturing error during the production of the substrate, essentially the nominal value of the volume relevant for the achievement of the desired value can be achieved.
  • a base plate which comprises a substrate, a first large area electrode and a second large area electrode.
  • the large-area electrodes are arranged on main surfaces, ie on the base and top surfaces of the substrate.
  • the dimension of the base plate is in two mutually perpendicular lateral directions a multiple of the corresponding dimension of a provided device region.
  • a cover area of a component area necessary to achieve the desired resistance value is calculated.
  • the base plate is singulated, wherein cut out for the preparation of the device from the base plate of the component area with the calculated top surface becomes.
  • the baseplate is preferably divided into a two-dimensional arrangement of similar component regions with the calculated top surface and singulated according to this division into separate component regions.
  • the specified method is intended in particular for producing an SMD-capable resistor element.
  • the separated component region forms a basic body provided with electrodes of the component to be produced. After the separation of the base plate, a first or a second electrode of the component is formed from the large-area first and second electrodes.
  • the base plate is made by sintering a large-area substrate, for. Ceramic substrates, and metallizing this substrate to form the large area electrodes.
  • a first metallization layer is formed on the upper side of the substrate to form the first large-area electrode
  • a second metallization layer is formed on the underside of this substrate to form the second large-area electrode.
  • These layers are z. B. applied as a metal paste on the main surfaces of the substrate and baked.
  • These layers can preferably be plated by electroplating or by sputtering to form a barrier layer before or after singulation of the baseplate.
  • the nickel-plated electrodes can be used in one tinned advantageous variant for forming a solderable layer.
  • a barrier layer suitable as a diffusion barrier or a layer sequence comprising a solderable layer and a barrier layer can be produced on the respective electrode.
  • the solderable layer preferably contains tin or a tin alloy.
  • the barrier layer is arranged between the solderable layer and the corresponding electrode.
  • the barrier layer is preferably a nickel-containing layer, the z. B. forms a Ni / Sn barrier.
  • the arranged on the opposite faces of the body metallization layers (on each side of the electrode, the barrier layer and the solderable layer) form electrical connections of the device.
  • barrier layer and possibly also of the solderable layer is preferably carried out before the measurement. But they can also be applied only after the measurement.
  • the region of the first and the second outer electrode arranged on the lateral surface or on the underside of the main body respectively forms a contact of the component suitable for surface mounting.
  • outer electrodes a material containing a noble metal, in particular silver or a silver alloy, may be used be used.
  • the outer electrode may also contain a solderable material or, preferably, as the outer layer, a solderable layer.
  • the outer electrode can be tinned in particular.
  • An electrically insulating passivation layer can be applied to the outer surface of the main body before the outer electrodes are applied.
  • a glass slip can be used for the preparation of the passivation layer.
  • Other electrically insulating materials are also suitable for the passivation layer.
  • the outer electrodes are preferably applied in such a way that at least a portion of the respective outer electrode lies on the passivation layer.
  • the outer electrodes each form an end cap, wherein the side wall of this cap lies on the passivation layer and is held by the layer at a distance from the main body or electrically insulated from it.
  • the connection cap thus has areas arranged on the lateral surface of the component. Since the parts of the cap arranged on the lateral surface of the component are electrically insulated from the main body by the passivation, they have no influence on the resistance of the component.
  • the use of the passivation layer thus has the advantage that the tolerances associated with the application of the connection cap can essentially be excluded.
  • the glass slip is first baked and only then the outer electrodes are applied and baked. But it is also possible, after the application of the glass slip and the outer electrodes together in one Step in to burn.
  • FIG. 1 shows the cross section of a base plate 1, which has a substrate 100 '.
  • substrate 100 ' can z.
  • B. a ceramic plate can be used.
  • a first large-area electrode 211 'and on its underside a second large-area electrode 221' is arranged.
  • the large-area electrodes 211 ', 221' are z.
  • FIG. 2 shows a plan view of the base plate 1 from above. With the dot-dash lines (dividing lines), the division of the base plate into component regions 11, 12, 13,. 1N; 21, ...; 31, ...; M1, M2, M3 ... MN indicated. The base plate 1 is z along these lines. B. isolated by sawing.
  • the two-dimensional arrangement of device regions 11... MN forms a matrix of dimension M ⁇ N with M rows and N columns, where N ⁇ 2 and M ⁇ 2.
  • the base plate is therefore a large-area plate whose lateral dimensions are a multiple of the lateral dimensions Lx, Ly amount to a designated device area. With x and y are lateral directions and z denotes a vertical direction.
  • the main surfaces of the base plate preferably comprise the end faces of the component regions to be separated.
  • the thickness of the base plate 1 essentially defines the length of the component to be produced.
  • the z-direction thickness of the substrate 100 'and the area Lx x Ly of a device region define the actual resistance of the device.
  • the resistance of the substrate region disposed between the first and second large-area electrodes 211 ', 221' is measured at the actual substrate thickness.
  • the measured resistance value allows to deduce the resistivity of the substrate material. If the actual resistivity of the substrate material determined from this measurement or the actual substrate thickness deviates from the corresponding ideal value, the area of a component area can be adjusted in such a way that the resistance of the component to be set is achieved.
  • FIG. 3 an isolated component area or component is shown.
  • the main body 100 of the device was produced from the substrate 100 '.
  • the first electrode layer 211 was formed from the first large-area electrode 211 'and the second electrode layer 221 of the device was generated from the first large-area electrode 221'.
  • a barrier layer 212, 222 was applied to the electrode layer 211, 221, and a solderable layer 213, 223 was applied to the latter, preferably galvanically or by sputtering.
  • a material for the layers 211, 221 is in particular silver, AgPd, Au, Al, Cu or Cr into consideration.
  • the barrier layers 212, 222 are z.
  • the surface mount suitable electrical terminals 210, 220 of the device are arranged in this variant on the end sides of the body and each formed by the layer sequence 211, 212, 213 and 221, 222, 223.
  • the barrier layer 212, 222 can be applied after the measurement on the two main surfaces of the base plate 1 galvanically or by sputtering. However, it can also be applied to the electrodes 211, 211 only after the separation of component areas. This also applies to the solderable layer 213, 223.
  • FIG. 4 is a component with arranged on its underside SMD contacts 51, 52 shown. Also in this variant, the electrodes 211, 221 are arranged on the end faces of the basic body 100. A glass slip is preferably applied to the lateral surface of the main body 100 of a separated component region in order to produce a passivation layer 30 in a spraying process.
  • solderable layer 213, 223 is in the variant according to FIG. 4 an outer electrode 41, 42 used.
  • the outer electrodes 41, 42 are preferably formed from a silver-containing and / or solderable material. Each outer electrode can also be several layers, for. As an Ag layer and a Ni / Sn layer. These layers are each, for example, by dipping the respective end face of the body in a metal paste or galvanized.
  • the outer electrodes 41, 42 each form a front-side metal cap, wherein the side wall of this cap is located on the passivation layer 30 and is held by this layer from the base body 100 at a distance or electrically insulated from this.
  • the arranged on the underside of the body 100 areas of the outer electrodes 41, 42 form SMD contacts of the device.
  • the outer electrodes 41, 42 are produced after the application of the passivation layer 30. It is possible first to burn in the passivation layer 30, then to produce outer electrodes 41, 42 on the base body provided with the passivation layer, to apply at least one metal layer on the face side and burn it. However, it is also possible to successively apply the passivation layer 30 and the metal layer provided for the formation of the outer electrode 41, 42, and to bake both layers together.
  • a preferably organic protective lacquer can be applied to these electrodes after the measurement and before the application of the passivation layer 30 become charred in the course of baking the passivation layer 30.
  • the protective lacquer can be applied over a large area to the two main surfaces of the base plate 1. But it can also be applied to the separation of component areas on the end faces.
  • the large-area electrodes 211 'and 221' can be removed after the measurement. This can be done before or after the singulation of the substrate, before or after the application and / or burning of the passivation layer 30 z. B. done in a chemical etching process.
  • the outer electrodes 41, 42 can then be applied after the application of the passivation layer 30 to the metal-free end sides of the component in this case and the end-side regions of the passivation layer 30.
  • the baking of the passivation layer 30 and the outer electrodes 41, 42 can be carried out successively or in a burn-in step as already explained.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Thermistors And Varistors (AREA)

Description

Es wird ein Verfahren zur Herstellung eines elektrisches Bauelements beschrieben.A method for producing an electrical component is described.

Aus der Druckschrift EP 0063295 A2 sind Verfahren zur Herstellung von Thermistorbauelementen mit kleiner Toleranz bekannt. Dazu werden einzelne Abschnitte eines Thermistormaterials vor dem vereinzeln vermessen.From the publication EP 0063295 A2 For example, methods of making small tolerance thermistor devices are known. For this purpose, individual sections of a thermistor material are measured prior to separation.

Aus der Druckschrift DE 3718197 A1 sind Verfahren zur Herstellung von NTC Bauelementen bekannt. NTC steht für "Negative Temperature Coefficient".From the publication DE 3718197 A1 are known methods for the production of NTC devices. NTC stands for "Negative Temperature Coefficient".

Eine zu lösende Aufgabe besteht darin, ein Verfahren zur Herstellung eines elektrisches Bauelements mit geringen Toleranzen anzugeben.An object to be solved is to provide a method for producing an electrical component with low tolerances.

Ein solches Verfahren wird durch den unabhängigen Anspruch 1 angegeben. Abhängige Ansprüche geben vorteilhafte Ausgestaltungen an.Such a method is indicated by the independent claim 1. Dependent claims indicate advantageous embodiments.

Das Bauelement kann insbesondere ein Widerstands-Bauelement sein. Im Bauelement ist mindestens eine Funktionseinheit wie z. B. ein NTC-Widerstand, ein Kaltleiter oder ein Varistor realisiert. Das Bauelement umfasst einen Grundkörper mit mindestens zwei Elektroden. Der Grundkörper ist vorzugsweise ein gesinterter Keramikkörper. Der Grundkörper des Bauelements wird ausgehend aus einem Substrat hergestellt, das zur Bildung von mehreren Grundkörpern vereinzelt wird.The component may in particular be a resistance component. In the device is at least one functional unit such. As an NTC resistor, a PTC thermistor or a varistor realized. The component comprises a base body with at least two electrodes. The main body is preferably a sintered ceramic body. The main body of the device is prepared starting from a substrate which is singulated to form a plurality of basic bodies.

Die tatsächlichen Parameter (insbesondere der spezifische Widerstand und die Dicke) des Substrats, das später den Grundkörper eines herzustellenden Bauelements bildet, können aus fertigungstechnischen Gründen jeweils von einem entsprechenden vorgegebenen Wert abweichen, der für die zu erreichende elektrische Größe des Bauelements berechnet wurde. Dies hat zur Folge, dass der Istwert der elektrischen Größe des Bauelements vom vorgegebenen Sollwert abweicht. Um diesen Fertigungsstreuungen Rechnung zu tragen, kann die Fläche eines Bauelementbereichs bei den tatsächlichen Parametern des Substrats zur Erreichung des Sollwerts der elektrischen Größe angepasst werden. Beispielsweise kann bei einer bezogen auf den Nominalwert der Substratdicke höheren Ist-Substratdicke die Fläche der Bauelementbereiche kleiner als der entsprechende Nominalwert der Fläche und umgekehrt, bei einer bezogen auf den Nominalwert der Substratdicke kleineren Substratdicke die Fläche der Bauelementbereiche größer gewählt werden. Durch die Anpassung der Fläche der Bauelementbereiche kann trotz des Fertigungsfehlers bei der Herstellung des Substrats im Wesentlichen der Nominalwert des für die Erreichung des Sollwerts relevanten Volumens erzielt werden.The actual parameters (in particular the specific resistance and the thickness) of the substrate, which later forms the main body of a component to be produced, can each differ from a corresponding predetermined value for manufacturing reasons, which was calculated for the electrical size of the component to be achieved. This has the consequence that the actual value of the electrical size of the device deviates from the specified setpoint. To account for these manufacturing variations, the area of a device region may be adjusted at the actual parameters of the substrate to achieve the electrical size setpoint. For example, with an actual substrate thickness which is higher relative to the nominal value of the substrate thickness, the area of the component regions may be smaller than the corresponding nominal value of the surface and vice versa, the area of the device regions may be greater for a substrate thickness smaller in relation to the nominal value of the substrate thickness. Due to the adaptation of the area of the component regions, in spite of the manufacturing error during the production of the substrate, essentially the nominal value of the volume relevant for the achievement of the desired value can be achieved.

Es wird ein Verfahren zur Herstellung eines elektrischen Bauelements mit einem vorgegebenen Sollwert einer elektrischen Größe, z. B. einem Soll-Widerstandswert angegeben. Zunächst wird eine Grundplatte bereitgestellt, die ein Substrat, eine erste großflächige Elektrode und eine zweite großflächige Elektrode aufweist. Die großflächigen Elektroden sind auf Hauptflächen, d. h. auf der Grund- und Deckfläche des Substrats angeordnet. Die Abmessung der Grundplatte ist in zwei zueinander senkrechten lateralen Richtungen ein Vielfaches der entsprechenden Abmessung eines vorgesehenen Bauelementbereichs. Zwischen den großflächigen Elektroden wird der Istwert der elektrischen Größe des dazwischen angeordneten Substratsbereichs - z. B. sein Ist-Widerstand - gemessen. Auf der Basis dieser Messung wird eine zur Erreichung des Soll-Widerstandswerts notwendige Deckfläche eines Bauelementbereichs berechnet. Die Grundplatte wird vereinzelt, wobei zur Herstellung des Bauelements aus der Grundplatte der Bauelementbereich mit der berechneten Deckfläche herausgeschnitten wird.It is a method for producing an electrical component having a predetermined setpoint of an electrical variable, for. B. specified a desired resistance value. First, a base plate is provided which comprises a substrate, a first large area electrode and a second large area electrode. The large-area electrodes are arranged on main surfaces, ie on the base and top surfaces of the substrate. The dimension of the base plate is in two mutually perpendicular lateral directions a multiple of the corresponding dimension of a provided device region. Between the large-area electrodes of the actual value of the electrical size of the interposed substrate region -. B. its actual resistance - measured. On the basis of this measurement, a cover area of a component area necessary to achieve the desired resistance value is calculated. The base plate is singulated, wherein cut out for the preparation of the device from the base plate of the component area with the calculated top surface becomes.

Die Grundplatte wird vorzugsweise in eine zweidimensionale Anordnung von gleichartigen Bauelementbereichen mit der berechneten Deckfläche aufgeteilt und gemäß dieser Aufteilung in separate Bauelementbereiche vereinzelt. Durch die Anpassung der Fläche des Bauelementbereichs bei der fertigungstechnisch bedingten Ist-Dicke des Substrats gelingt es beispielsweise, den Toleranzfehler durch eine vom Idealwert abweichende Substratdicke zu kompensieren.The baseplate is preferably divided into a two-dimensional arrangement of similar component regions with the calculated top surface and singulated according to this division into separate component regions. By adapting the surface of the component region in the production-related actual thickness of the substrate, for example, it is possible to compensate for the tolerance error by a substrate thickness deviating from the ideal value.

Das angegebene Verfahren ist insbesondere zur Herstellung eines SMD-fähigen Widerstandselements vorgesehen.The specified method is intended in particular for producing an SMD-capable resistor element.

Der separierte Bauelementbereich bildet einen mit Elektroden versehenen Grundkörper des herzustellenden Bauelements. Nach der Vereinzelung der Grundplatte wird aus der großflächigen ersten und zweiten Elektrode eine erste bzw. eine zweite Elektrode des Bauelements gebildet.The separated component region forms a basic body provided with electrodes of the component to be produced. After the separation of the base plate, a first or a second electrode of the component is formed from the large-area first and second electrodes.

Die Grundplatte wird durch Sintern eines großflächigen Substrats, z. B. Keramiksubstrats, und Metallisieren dieses Substrats zur Bildung der großflächigen Elektroden erzeugt. Erfindungsgemäß wird zur Bildung der ersten großflächigen Elektrode eine erste Metallisierungsschicht auf der Oberseite des Substrats und zur Bildung der zweiten großflächigen Elektrode eine zweite Metallisierungsschicht auf der Unterseite dieses Substrats erzeugt. Diese Schichten werden z. B. als Metallpaste auf die Hauptflächen des Substrats aufgetragen und eingebrannt. Diese Schichten können zur Bildung einer Barriereschicht vor oder nach der Vereinzelung der Grundplatte vorzugsweise galvanisch oder durch Sputtern vernickelt werden. Die vernickelten Elektroden können in einer vorteilhaften Variante zur Bildung einer lötbaren Schicht verzinnt werden.The base plate is made by sintering a large-area substrate, for. Ceramic substrates, and metallizing this substrate to form the large area electrodes. According to the invention, a first metallization layer is formed on the upper side of the substrate to form the first large-area electrode, and a second metallization layer is formed on the underside of this substrate to form the second large-area electrode. These layers are z. B. applied as a metal paste on the main surfaces of the substrate and baked. These layers can preferably be plated by electroplating or by sputtering to form a barrier layer before or after singulation of the baseplate. The nickel-plated electrodes can be used in one tinned advantageous variant for forming a solderable layer.

Auf der jeweiligen Elektrode kann grundsätzlich eine als eine Diffusionsbarriere geeignete Barriereschicht oder eine Schichtenfolge erzeugt werden, die eine lötbare Schicht und eine Barriereschicht umfasst. Die lötbare Schicht enthält vorzugsweise Zinn oder eine Zinnlegierung. Die Barriereschicht ist zwischen der lötbaren Schicht und der entsprechenden Elektrode angeordnet. Die Barriereschicht ist vorzugsweise eine Nickel enthaltende Schicht, die z. B. eine Ni/Sn-Barriere bildet. Die auf den gegenüber liegenden Stirnflächen des Grundkörpers angeordneten Metallisierungsschichten (auf jeder Seite die Elektrode, die Barriereschicht und die lötbare Schicht) bilden elektrische Anschlüsse des Bauelements.In principle, a barrier layer suitable as a diffusion barrier or a layer sequence comprising a solderable layer and a barrier layer can be produced on the respective electrode. The solderable layer preferably contains tin or a tin alloy. The barrier layer is arranged between the solderable layer and the corresponding electrode. The barrier layer is preferably a nickel-containing layer, the z. B. forms a Ni / Sn barrier. The arranged on the opposite faces of the body metallization layers (on each side of the electrode, the barrier layer and the solderable layer) form electrical connections of the device.

Die Auftragung der Barriereschicht und ggf. auch der lötbaren Schicht erfolgt vorzugsweise vor der Messung. Sie können aber auch erst nach der Messung aufgetragen werden.The application of the barrier layer and possibly also of the solderable layer is preferably carried out before the measurement. But they can also be applied only after the measurement.

Auf die die vorzugsweise vernickelten Elektroden tragende erste und zweite Stirnfläche des Grundkörpers und auf den stirnseitigen Bereich seiner Mantelfläche wird in einer Variante eine erste bzw. eine zweite Außenelektrode z. B. durch Tauchen in eine Metallpaste aufgebracht. In diesem Fall bildet der auf der Mantelfläche bzw. an der Unterseite des Grundkörpers angeordnete Bereich der ersten und der zweiten Außenelektrode jeweils einen zur Oberflächenmontage geeigneten Kontakt des Bauelements.On the preferably nickel-plated electrodes supporting first and second end faces of the body and on the frontal region of its lateral surface is in a variant, a first or a second outer electrode z. B. applied by dipping in a metal paste. In this case, the region of the first and the second outer electrode arranged on the lateral surface or on the underside of the main body respectively forms a contact of the component suitable for surface mounting.

Für die Außenelektroden kann ein ein Edelmetall - insbesondere Silber oder eine Silberlegierung - enthaltendes Material verwendet werden. Die Außenelektrode kann auch ein lötbares Material oder vorzugsweise als die äußere Schicht eine lötbare Schicht enthalten. Die Außenelektrode kann insbesondere verzinnt werden.For the outer electrodes, a material containing a noble metal, in particular silver or a silver alloy, may be used be used. The outer electrode may also contain a solderable material or, preferably, as the outer layer, a solderable layer. The outer electrode can be tinned in particular.

Auf die Mantelfläche des Grundkörpers kann vor der Auftragung der Außenelektroden eine elektrisch isolierende Passivierungsschicht aufgetragen werden. Zur Herstellung der Passivierungsschicht kann z. B. ein Glasschlicker verwendet werden. Auch andere elektrisch isolierende Materialien kommen für die Passivierungsschicht in Betracht. Die Außenelektroden werden dabei vorzugsweise derart aufgetragen, dass mindestens ein Bereich der jeweiligen Außenelektrode auf der Passivierungsschicht liegt.An electrically insulating passivation layer can be applied to the outer surface of the main body before the outer electrodes are applied. For the preparation of the passivation layer can, for. B. a glass slip can be used. Other electrically insulating materials are also suitable for the passivation layer. The outer electrodes are preferably applied in such a way that at least a portion of the respective outer electrode lies on the passivation layer.

Die Außenelektroden bilden in einer bevorzugten Variante jeweils eine stirnseitige Anschlusskappe, wobei die Seitenwand dieser Kappe auf der Passivierungsschicht liegt und durch diese Schicht vom Grundkörper im Abstand gehalten bzw. von diesem elektrisch isoliert wird. Die Anschlusskappe weist also auf der Mantelfläche des Bauelements angeordnete Bereiche. Da die auf der Mantelfläche des Bauelements angeordneten Teile der Kappe vom Grundkörper durch die Passivierung elektrisch isoliert sind, haben sie keinen Einfluss auf den Widerstand des Bauelements. Die Verwendung der Passivierungsschicht hat also den Vorteil, dass die mit der Aufbringung der Anschlusskappe zusammenhängenden Toleranzen im Wesentlichen ausgeschlossen werden können.In a preferred variant, the outer electrodes each form an end cap, wherein the side wall of this cap lies on the passivation layer and is held by the layer at a distance from the main body or electrically insulated from it. The connection cap thus has areas arranged on the lateral surface of the component. Since the parts of the cap arranged on the lateral surface of the component are electrically insulated from the main body by the passivation, they have no influence on the resistance of the component. The use of the passivation layer thus has the advantage that the tolerances associated with the application of the connection cap can essentially be excluded.

In einer Variante wird zunächst der Glasschlicker eingebrannt und erst danach die Außenelektroden aufgetragen und eingebrannt. Möglich ist aber auch, nach der Auftragung des Glasschlickers und der Außenelektroden diese zusammen in einem Schritt einzubrennen.In one variant, the glass slip is first baked and only then the outer electrodes are applied and baked. But it is also possible, after the application of the glass slip and the outer electrodes together in one Step in to burn.

Im Folgenden wird das angegebene Verfahren anhand von schematischen und nicht maßstabsgetreuen Figuren erläutert. Es zeigen:

  • Figur 1 die in Bauelementbereiche zu vereinzelnde Grundplatte im Querschnitt;
  • Figur 2 die Aufteilung der Grundplatte gemäß Figur 1 in Bauelementbereiche;
  • Figur 3 ein Bauelement mit stirnseitig angeordneten SMD-Kontakten;
  • Figur 4 ein Bauelement mit einer Passivierungsschicht, die die auf der Mantelfläche angeordneten Teile von Außenelektroden vom Grundkörper des Bauelements trennt.
In the following, the specified method will be explained with reference to schematic and not to scale figures. Show it:
  • FIG. 1 the base plate to be singulated in component areas in cross section;
  • FIG. 2 the division of the base plate according to FIG. 1 in component areas;
  • FIG. 3 a device with frontally arranged SMD contacts;
  • FIG. 4 a device with a passivation layer which separates the arranged on the lateral surface parts of external electrodes from the main body of the device.

Figur 1 zeigt den Querschnitt einer Grundplatte 1, die ein Substrat 100' aufweist. Als Substrat 100' kann z. B. eine Keramikplatte verwendet werden. Auf der Oberseite des Substrats ist eine erste großflächige Elektrode 211' und auf seiner Unterseite eine zweite großflächige Elektrode 221' angeordnet. Die großflächigen Elektroden 211', 221' sind z. B. silberhaltige Metallschichten. Zur Bildung dieser Schichten wird eine Metallpaste auf das Substrat 100' aufgetragen und vorzugsweise eingebrannt. FIG. 1 shows the cross section of a base plate 1, which has a substrate 100 '. As substrate 100 'can z. B. a ceramic plate can be used. On the upper side of the substrate, a first large-area electrode 211 'and on its underside a second large-area electrode 221' is arranged. The large-area electrodes 211 ', 221' are z. B. silver-containing metal layers. To form these layers, a metal paste is applied to the substrate 100 'and preferably baked.

Figur 2 zeigt eine Draufsicht auf die Grundplatte 1 von oben. Mit den strichpunktierten Linien (Trennlinien) ist die Aufteilung der Grundplatte in Bauelementbereiche 11, 12, 13, ..., 1N; 21, ...; 31, ...; M1, M2, M3 ... MN angedeutet. Die Grundplatte 1 wird entlang dieser Linien z. B. durch Sägen vereinzelt. FIG. 2 shows a plan view of the base plate 1 from above. With the dot-dash lines (dividing lines), the division of the base plate into component regions 11, 12, 13,. 1N; 21, ...; 31, ...; M1, M2, M3 ... MN indicated. The base plate 1 is z along these lines. B. isolated by sawing.

Die zweidimensionale Anordnung von Bauelementbereichen 11 ... MN bildet eine Matrix der Dimension M x N mit M Reihen und N Spalten, wobei gilt N ≥ 2 und M ≥ 2. Die Grundplatte ist also eine großflächige Platte, deren laterale Abmessungen ein Vielfaches der Lateralabmessungen Lx, Ly eines vorgesehenen Bauelementbereichs betragen. Mit x und y sind Lateralrichtungen und mit z eine Vertikalrichtung bezeichnet. Die Hauptflächen der Grundplatte umfassen vorzugsweise die Stirnseiten der zu vereinzelnden Bauelementbereiche. Die Dicke der Grundplatte 1 definiert im Wesentlichen die Länge des herzustellenden Bauelements. Die in z-Richtung gemessene Dicke des Substrats 100' und die Fläche Lx x Ly eines Bauelementbereichs definieren den tatsächlichen Widerstandswert des Bauelements.The two-dimensional arrangement of device regions 11... MN forms a matrix of dimension M × N with M rows and N columns, where N ≥ 2 and M ≥ 2. The base plate is therefore a large-area plate whose lateral dimensions are a multiple of the lateral dimensions Lx, Ly amount to a designated device area. With x and y are lateral directions and z denotes a vertical direction. The main surfaces of the base plate preferably comprise the end faces of the component regions to be separated. The thickness of the base plate 1 essentially defines the length of the component to be produced. The z-direction thickness of the substrate 100 'and the area Lx x Ly of a device region define the actual resistance of the device.

Vor dem Vereinzeln der Grundplatte 1 wird der Widerstand des zwischen der ersten und der zweiten großflächigen Elektrode 211', 221' angeordneten Substratbereichs bei der tatsächlichen Substratdicke gemessen. Der gemessene Widerstandswert lässt bei den gegebenen Abmessungen der großflächigen Elektroden 211', 221' auf den spezifischen Widerstand des Substratmaterials schließen. Falls der aus dieser Messung bestimmte tatsächliche spezifische Widerstand des Substratmaterials oder die tatsächliche Substratdicke vom entsprechenden Idealwert abweicht, kann die Fläche eines Bauelementbereichs so angepasst werden, dass der einzustellende Widerstand des Bauelements erzielt wird.Before the separation of the base plate 1, the resistance of the substrate region disposed between the first and second large-area electrodes 211 ', 221' is measured at the actual substrate thickness. With the given dimensions of the large-area electrodes 211 ', 221', the measured resistance value allows to deduce the resistivity of the substrate material. If the actual resistivity of the substrate material determined from this measurement or the actual substrate thickness deviates from the corresponding ideal value, the area of a component area can be adjusted in such a way that the resistance of the component to be set is achieved.

In Figur 3 ist ein vereinzeltes Bauelementbereich bzw. Bauelement gezeigt. Der Grundkörper 100 des Bauelements wurde aus dem Substrat 100' erzeugt. Die erste Elektrodenschicht 211 wurde aus der ersten großflächigen Elektrode 211' und die zweite Elektrodenschicht 221 des Bauelements wurde aus der ersten großflächigen Elektrode 221' erzeugt.In FIG. 3 an isolated component area or component is shown. The main body 100 of the device was produced from the substrate 100 '. The first electrode layer 211 was formed from the first large-area electrode 211 'and the second electrode layer 221 of the device was generated from the first large-area electrode 221'.

Auf die Elektrodenschicht 211, 221 wurde eine Barriereschicht 212, 222 und auf die letztere eine lötbare Schicht 213, 223 vorzugsweise galvanisch oder durch Sputtern aufgetragen. Als Material für die Schichten 211, 221 kommt insbesondere Silber, AgPd, Au, Al, Cu oder Cr in Betracht. Die Barriereschichten 212, 222 sind z. B. nickelhaltige Schichten und die lötbaren Schichten 213, 223 zinnhaltige Schichten. Die zur Oberflächenmontage geeigneten elektrischen Anschlüsse 210, 220 des Bauelements sind in dieser Variante auf den Stirnseiten des Grundkörpers angeordnet und jeweils durch die Schichtenfolge 211, 212, 213 und 221, 222, 223 gebildet.A barrier layer 212, 222 was applied to the electrode layer 211, 221, and a solderable layer 213, 223 was applied to the latter, preferably galvanically or by sputtering. As a material for the layers 211, 221 is in particular silver, AgPd, Au, Al, Cu or Cr into consideration. The barrier layers 212, 222 are z. B. nickel-containing layers and the solderable layers 213, 223 tin-containing layers. The surface mount suitable electrical terminals 210, 220 of the device are arranged in this variant on the end sides of the body and each formed by the layer sequence 211, 212, 213 and 221, 222, 223.

Die Barriereschicht 212, 222 kann nach der Messung auf die beiden Hauptflächen der Grundplatte 1 galvanisch oder durch Sputtern aufgetragen werden. Sie kann aber auch erst nach dem Vereinzeln von Bauelementbereichen auf die Elektroden 211, 211 aufgetragen werden. Dies gilt auch für die lötbare Schicht 213, 223.The barrier layer 212, 222 can be applied after the measurement on the two main surfaces of the base plate 1 galvanically or by sputtering. However, it can also be applied to the electrodes 211, 211 only after the separation of component areas. This also applies to the solderable layer 213, 223.

In Figur 4 ist ein Bauelement mit auf seiner Unterseite angeordneten SMD-Kontakten 51, 52 gezeigt. Auch in dieser Variante sind die Elektroden 211, 221 auf den Stirnseiten des Grundkörpers 100 angeordnet. Auf die Mantelfläche des Grundkörpers 100 eines vereinzelten Bauelementbereichs wird zur Erzeugung einer Passivierungsschicht 30 vorzugsweise in einem Sprühverfahren ein Glasschlicker aufgetragen.In FIG. 4 is a component with arranged on its underside SMD contacts 51, 52 shown. Also in this variant, the electrodes 211, 221 are arranged on the end faces of the basic body 100. A glass slip is preferably applied to the lateral surface of the main body 100 of a separated component region in order to produce a passivation layer 30 in a spraying process.

Anstelle der lötbaren Schicht 213, 223 wird in der Variante gemäß Figur 4 eine Außenelektrode 41, 42 verwendet.Instead of the solderable layer 213, 223 is in the variant according to FIG. 4 an outer electrode 41, 42 used.

Die Außenelektroden 41, 42 werden vorzugsweise aus einem silberhaltigen und/oder lötbaren Material gebildet. Jede Außenelektrode kann auch mehrere Schichten, z. B. eine Ag-Schicht und eine Ni/Sn-Schicht enthalten. Diese Schichten werden jeweils beispielsweise durch Eintauchen der jeweiligen Stirnseite des Grundkörpers in eine Metallpaste oder galvanisch erzeugt.The outer electrodes 41, 42 are preferably formed from a silver-containing and / or solderable material. Each outer electrode can also be several layers, for. As an Ag layer and a Ni / Sn layer. These layers are each, for example, by dipping the respective end face of the body in a metal paste or galvanized.

Die Außenelektroden 41, 42 bilden jeweils eine stirnseitige Metallkappe, wobei die Seitenwand dieser Kappe auf der Passivierungsschicht 30 liegt und durch diese Schicht vom Grundkörper 100 im Abstand gehalten bzw. von diesem elektrisch isoliert wird. Die auf der Unterseite des Grundkörpers 100 angeordneten Bereiche der Außenelektroden 41, 42 bilden SMD-Kontakte des Bauelements.The outer electrodes 41, 42 each form a front-side metal cap, wherein the side wall of this cap is located on the passivation layer 30 and is held by this layer from the base body 100 at a distance or electrically insulated from this. The arranged on the underside of the body 100 areas of the outer electrodes 41, 42 form SMD contacts of the device.

Die Außenelektroden 41, 42 werden nach dem Auftragen der Passivierungsschicht 30 erzeugt. Es ist möglich, zunächst die Passivierungsschicht 30 einzubrennen, danach zur Erzeugung von Außenelektroden 41, 42 auf den mit der Passivierungsschicht versehenen Grundkörper stirnseitig mindestens eine Metallschicht aufzutragen und diese einzubrennen. Möglich ist aber auch, die Passivierungsschicht 30 und die zur Ausbildung der Außenelektrode 41, 42 vorgesehene Metallschicht nacheinander aufzutragen und beide Schichten zusammen einzubrennen.The outer electrodes 41, 42 are produced after the application of the passivation layer 30. It is possible first to burn in the passivation layer 30, then to produce outer electrodes 41, 42 on the base body provided with the passivation layer, to apply at least one metal layer on the face side and burn it. However, it is also possible to successively apply the passivation layer 30 and the metal layer provided for the formation of the outer electrode 41, 42, and to bake both layers together.

Um die Elektroden 211, 221 der Bauelementbereiche von der Passivierungsschicht 30 frei zu halten, kann auf diese Elektroden nach der Messung und vor der Auftragung der Passivierungsschicht 30 ein vorzugsweise organisches Schutzlack aufgetragen werden, der im Laufe des Einbrennens der Passivierungsschicht 30 verkohlt. Der Schutzlack kann großflächig auf die beiden Hauptflächen der Grundplatte 1 aufgetragen werden. Er kann aber auch nach dem Vereinzeln von Bauelementbereichen auf deren Stirnseiten aufgetragen werden.In order to keep the electrodes 211, 221 of the component regions free of the passivation layer 30, a preferably organic protective lacquer can be applied to these electrodes after the measurement and before the application of the passivation layer 30 become charred in the course of baking the passivation layer 30. The protective lacquer can be applied over a large area to the two main surfaces of the base plate 1. But it can also be applied to the separation of component areas on the end faces.

In einer Variante des Verfahrens können die großflächigen Elektroden 211' und 221' nach der Messung entfernt werden. Dies kann vor oder nach der Vereinzelung des Substrats, vor oder nach der Aufbringung und/oder Einbrennung der Passivierungsschicht 30 z. B. in einem chemischen Ätzverfahren geschehen. Die Außenelektroden 41, 42 können dann nach der Aufbringung der Passivierungsschicht 30 auf die in diesem Fall metallfreien Stirnseiten des Bauelements und die stirnseitigen Bereiche der Passivierungsschicht 30 aufgebracht werden. Das Einbrennen der Passivierungsschicht 30 und der Außenelektroden 41, 42 kann wie bereits erläutert nacheinander oder in einem Einbrennensschritt erfolgen.In a variant of the method, the large-area electrodes 211 'and 221' can be removed after the measurement. This can be done before or after the singulation of the substrate, before or after the application and / or burning of the passivation layer 30 z. B. done in a chemical etching process. The outer electrodes 41, 42 can then be applied after the application of the passivation layer 30 to the metal-free end sides of the component in this case and the end-side regions of the passivation layer 30. The baking of the passivation layer 30 and the outer electrodes 41, 42 can be carried out successively or in a burn-in step as already explained.

BezugzeichenlisteLIST OF REFERENCE NUMBERS

11
Grundplattebaseplate
100'100 '
Substratsubstratum
100100
Grundkörperbody
j1 ... jNj1 ... jN
in j-ter Reihe angeordnete Bauelementbereichein j-th series arranged component areas
M1 ... MNM1 ... MN
in M-ter Reihe angeordnete Bauelementbereichein M-th series arranged component areas
1k ... Mk1k ... Mk
in k-ter Spalte angeordnete Bauelementbereichearranged in k-th column component areas
210, 220210, 220
elektrische Anschlüsse des Bauelementselectrical connections of the device
211'211 '
erste großflächige Elektrodefirst large-area electrode
221'221 '
zweite großflächige Elektrodesecond large-area electrode
211, 221211, 221
erste bzw. zweite Elektrodefirst or second electrode
212, 222212, 222
Barriereschichtbarrier layer
213, 223213, 223
lötbare Elektrodenschichtsolderable electrode layer
3030
Passivierungsschichtpassivation
4141
erste Außenelektrodefirst outer electrode
4242
zweite Außenelektrodesecond outer electrode
51, 5251, 52
durch Bereiche der Außenelektroden 41, 42 gebildete SMD-Kontakteformed by areas of the external electrodes 41, 42 SMD contacts
LxLx
Abmessung eines Bauelementbereichs in x-RichtungDimension of a component area in x-direction
LyLy
Abmessung eines Bauelementbereichs in y-RichtungDimension of a component area in the y-direction
xx
erste laterale Richtungfirst lateral direction
yy
zweite laterale Richtungsecond lateral direction
zz
vertikale Richtungvertical direction

Claims (19)

  1. Method for producing an electrical component having a predefined setpoint value of an electrical parameter, comprising the following steps:
    a) providing a baseplate (1) having a substrate (100'), a first large-area electrode (211') and a second large-area electrode (221'), wherein the large-area electrodes (211', 221') are arranged on the main surface of the substrate (100'), wherein the lateral dimensions of the baseplate (1) are a multiple of the lateral dimensions (Lx, Ly) of a component region (11 - MN);
    b) measuring an actual value of the electrical parameter between the first large-area electrode (211') and the second large-area electrode (221') and calculating the cover area of a component region (11 - MN) assigned to the component to be produced, which cover area is necessary for achieving the setpoint value of the electrical parameter;
    c) singulating the baseplate (1), wherein the component region (11 - MN) is cut out from the baseplate (1) in order to produce the component;
    characterized in that
    in order to form the first large-area electrode (211') a first metallization layer is produced on the top side of the substrate (100'), and in order to form the second large-area electrode (221') a second metallization layer is produced on the underside of said substrate.
  2. Method according to Claim 1,
    wherein the two-dimensional arrangement of component regions (11 - MN) forms a matrix of dimensions M × N, wherein N ≥ 2 and M ≥ 2 hold true.
  3. Method according to either of Claims 1 and 2,
    wherein a ceramic plate is used as the substrate (100').
  4. Method according to any of Claims 1 to 3,
    wherein the electrical parameter to be set is a resistance.
  5. Method according to any of Claims 1 to 4,
    wherein a material containing Ag, Au, Al, Cu, or Cr is used for producing the large-area electrodes (211', 221').
  6. Method according to any of Claims 1 to 5,
    wherein, during the process of singulating the baseplate (1), the latter decomposes into component regions (11 - MN) each having a main body (100) with electrodes (211, 221) arranged on its two end faces.
  7. Method according to Claim 6,
    wherein a layer sequence is produced on the respective electrode (211, 221), said layer sequence comprising a solderable layer (213, 223) and a barrier layer (212, 222) suitable as a diffusion barrier, said barrier layer being arranged between the solderable layer (213, 223) and the electrode (211, 221).
  8. Method according to Claim 7,
    wherein the barrier layer contains Ni.
  9. Method according to Claim 6,
    - wherein a first external electrode (41) is applied on the first end face of the main body (100), said first end face carrying the first electrode (211), and on the end-side region of the lateral surface of said main body,
    - wherein a second external electrode (42) is applied on the first end face of the main body (100), said first end face carrying the second electrode (221), and on the end-side region of the lateral surface of said main body.
  10. Method according to Claim 9,
    wherein an electrically insulating passivation layer (30) is applied on the lateral surface of the main body.
  11. Method according to Claim 10,
    wherein a glass slurry is used for producing the passivation layer (30).
  12. Method according to Claim 10 or 11,
    wherein the external electrodes (41, 42) are applied in such a way that at least one region of the respective external electrode lies on the passivation layer (30).
  13. Method according to any of Claims 1 to 12,
    wherein a silver-containing material is used for the external electrodes (41, 42).
  14. Method according to Claim 11,
    wherein the glass slurry is fired, and wherein the external electrodes (41, 42) are subsequently applied and fired.
  15. Method according to Claim 11,
    wherein the glass slurry and the external electrodes (41, 42) are applied and fired together in one step.
  16. Method according to any of Claims 10 to 15,
    wherein a protective lacquer is applied on the electrodes (211, 221) after the measurement and before the application of the passivation layer (30), which protective lacquer carbonizes in the course of the firing of the passivation layer (30).
  17. Method according to Claim 16,
    wherein the protective lacquer is applied over a large area on the two main surfaces of the baseplate (1) or, after the singulation of component regions, on the end sides thereof.
  18. Method according to any of Claims 1 to 17,
    which is carried out in order to produce an NTC component.
  19. Method according to Claim 1,
    wherein step c) comprises the following substeps:
    c1) the division of at least one region of the baseplate (1) into a two-dimensional arrangement of component regions each having the calculated cover area, and
    c2) singulating the baseplate (1) into separate component regions in accordance with said division.
EP06791394.7A 2005-09-27 2006-09-20 Method for the production of an electrical component having little tolerance Active EP1929485B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005046191A DE102005046191A1 (en) 2005-09-27 2005-09-27 Production of an electrical component with low tolerances comprises preparing a base plate, measuring the actual value of the electrical parameter between the two electrodes of the base plate and further processing
PCT/DE2006/001660 WO2007036201A1 (en) 2005-09-27 2006-09-20 Method for the production of an electrical component having little tolerance

Publications (2)

Publication Number Publication Date
EP1929485A1 EP1929485A1 (en) 2008-06-11
EP1929485B1 true EP1929485B1 (en) 2017-11-08

Family

ID=37663335

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06791394.7A Active EP1929485B1 (en) 2005-09-27 2006-09-20 Method for the production of an electrical component having little tolerance

Country Status (4)

Country Link
EP (1) EP1929485B1 (en)
JP (1) JP2009510740A (en)
DE (1) DE102005046191A1 (en)
WO (1) WO2007036201A1 (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE444875B (en) * 1981-04-15 1986-05-12 Crafon Ab WANT TO MANUFACTURE THERMISTORS
DE3539318A1 (en) * 1985-11-06 1987-05-07 Almik Handelsgesellschaft Fuer Method for producing electric fixed-value resistors, and fixed-value resistor produced according to the method
JPS62285401A (en) * 1986-06-02 1987-12-11 株式会社村田製作所 Manufacture of thermistor
GB2301223B (en) * 1995-05-26 1999-04-21 Johnson Electric Sa Polymeric type positive temperature coefficient thermistors
DE19623857C2 (en) * 1996-06-14 2002-09-05 Epcos Ag Electrical resistance
JPH1154301A (en) * 1997-08-07 1999-02-26 Murata Mfg Co Ltd Chip thermister

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Also Published As

Publication number Publication date
EP1929485A1 (en) 2008-06-11
DE102005046191A1 (en) 2007-04-05
WO2007036201A1 (en) 2007-04-05
JP2009510740A (en) 2009-03-12

Similar Documents

Publication Publication Date Title
EP3371565B1 (en) Sensor element and method for producing a sensor element
DE102007007113A1 (en) Multilayer component
EP0654799A1 (en) Chip form of surface mounted electrical resistance and its manufacturing method
EP2057647B1 (en) Component assembly
DE3930623C2 (en)
DE102012110849A1 (en) Temperature sensor and method for producing a temperature sensor
DE2650466C2 (en) Electrical resistance
EP2008287B1 (en) Electrical ptc thermistor component, and method for the production thereof
DE3638286A1 (en) Electrical component, made of ceramic and having multilayer metallisation, and a method for its production
WO2001082314A1 (en) Electric component, method for the production thereof and use of the same
WO2016142080A1 (en) Production method for a gas sensor and corresponding gas sensor
US20020036564A1 (en) Method of producing thermistor chips
EP3994710A1 (en) Ntc thin film thermistor and method for producing an ntc thin film thermistor
WO2016034539A1 (en) Electrical component, component arrangement, and a method for producing an electrical component and component arrangement
EP1929485B1 (en) Method for the production of an electrical component having little tolerance
EP0016263A1 (en) Thin film resistor having a high temperature coefficient and method of manufacturing the same
DE2513859C2 (en) Method for producing a capacitor-resistor network
WO2017194408A2 (en) Multi-layered component and method for producing a multi-layered component
WO2002091408A1 (en) Ceramic multi-layer element and a method for the production thereof
DE4024612C2 (en) Ceramic, multi-layered substrate and manufacturing process
DE102022126523B3 (en) Sensor element and method for producing a sensor element
DE102022005060A1 (en) Sensor element and method for producing a sensor element
DE102022126526A1 (en) Sensor element and method for producing a sensor element
DE19634488A1 (en) Electrically conductive ceramic SMD component
DE1514230B2 (en) Semiconductor component and method for its manufacture

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20080131

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE FR GB

RBV Designated contracting states (corrected)

Designated state(s): DE FR GB

DAX Request for extension of the european patent (deleted)
17Q First examination report despatched

Effective date: 20161026

REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Ref document number: 502006015724

Country of ref document: DE

Free format text: PREVIOUS MAIN CLASS: H01C0017000000

Ipc: H01C0007040000

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

RIC1 Information provided on ipc code assigned before grant

Ipc: H01C 17/22 20060101ALI20170530BHEP

Ipc: H01C 7/04 20060101AFI20170530BHEP

Ipc: H01C 17/00 20060101ALI20170530BHEP

INTG Intention to grant announced

Effective date: 20170616

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

RIN1 Information on inventor provided before grant (corrected)

Inventor name: ARRIMADAS-MATIAS, JAVIER

Inventor name: KLOIBER, GERALD

Inventor name: KRAUSS, WERNER FRANZ

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

Free format text: NOT ENGLISH

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 502006015724

Country of ref document: DE

RAP2 Party data changed (patent owner data changed or rights of a patent transferred)

Owner name: EPCOS AG

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 502006015724

Country of ref document: DE

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20180809

REG Reference to a national code

Ref country code: DE

Ref legal event code: R082

Ref document number: 502006015724

Country of ref document: DE

Representative=s name: EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHA, DE

Ref country code: DE

Ref legal event code: R081

Ref document number: 502006015724

Country of ref document: DE

Owner name: TDK ELECTRONICS AG, DE

Free format text: FORMER OWNER: EPCOS AG, 81669 MUENCHEN, DE

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20180920

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180930

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180920

P01 Opt-out of the competence of the unified patent court (upc) registered

Effective date: 20230521

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20230920

Year of fee payment: 18