EP1908121A4 - Drain-extended mosfets with diode clamp - Google Patents

Drain-extended mosfets with diode clamp

Info

Publication number
EP1908121A4
EP1908121A4 EP05772304A EP05772304A EP1908121A4 EP 1908121 A4 EP1908121 A4 EP 1908121A4 EP 05772304 A EP05772304 A EP 05772304A EP 05772304 A EP05772304 A EP 05772304A EP 1908121 A4 EP1908121 A4 EP 1908121A4
Authority
EP
European Patent Office
Prior art keywords
drain
diode clamp
mosfets
extended
extended mosfets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP05772304A
Other languages
German (de)
French (fr)
Other versions
EP1908121A1 (en
Inventor
Sameer Pendharkar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of EP1908121A1 publication Critical patent/EP1908121A1/en
Publication of EP1908121A4 publication Critical patent/EP1908121A4/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7817—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device
    • H01L29/7818—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/66689—Lateral DMOS transistors, i.e. LDMOS transistors with a step of forming an insulating sidewall spacer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
EP05772304A 2005-07-18 2005-07-18 Drain-extended mosfets with diode clamp Ceased EP1908121A4 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2005/025396 WO2007011354A1 (en) 2005-07-18 2005-07-18 Drain-extended mosfets with diode clamp

Publications (2)

Publication Number Publication Date
EP1908121A1 EP1908121A1 (en) 2008-04-09
EP1908121A4 true EP1908121A4 (en) 2009-09-30

Family

ID=37669121

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05772304A Ceased EP1908121A4 (en) 2005-07-18 2005-07-18 Drain-extended mosfets with diode clamp

Country Status (4)

Country Link
EP (1) EP1908121A4 (en)
JP (1) JP2009502041A (en)
KR (1) KR100985373B1 (en)
WO (1) WO2007011354A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009059949A (en) * 2007-08-31 2009-03-19 Sharp Corp Semiconductor device and manufacturing method for the semiconductor device
US7838940B2 (en) 2007-12-04 2010-11-23 Infineon Technologies Ag Drain-extended field effect transistor
KR100943504B1 (en) 2007-12-31 2010-02-22 주식회사 동부하이텍 Method for manufacturing
JP5534298B2 (en) * 2009-06-16 2014-06-25 ルネサスエレクトロニクス株式会社 Semiconductor device
US8344472B2 (en) * 2010-03-30 2013-01-01 Freescale Semiconductor, Inc. Semiconductor device and method
KR101302108B1 (en) 2011-12-30 2013-08-30 주식회사 동부하이텍 Drain exteneded mos transistor and method for fabricating the same
JP5960445B2 (en) * 2012-02-23 2016-08-02 ラピスセミコンダクタ株式会社 Semiconductor device
JP2013247188A (en) * 2012-05-24 2013-12-09 Toshiba Corp Semiconductor device
US9129990B2 (en) * 2012-06-29 2015-09-08 Freescale Semiconductor, Inc. Semiconductor device and driver circuit with drain and isolation structure interconnected through a diode circuit, and method of manufacture thereof
KR101694092B1 (en) * 2016-03-03 2017-01-17 강희복 A power supply circuit system using a negative threshold five-terminal NMOS FET device for three-phase Flyback inductor schematic application
KR101694091B1 (en) * 2016-03-03 2017-01-17 강희복 A power supply circuit system using a negative threshold five-terminal NMOS FET device for Flyback inductor schematic application
JP6920137B2 (en) * 2017-08-31 2021-08-18 ルネサスエレクトロニクス株式会社 Semiconductor devices and their manufacturing methods
CN112713182B (en) * 2020-12-29 2022-06-28 浙大城市学院 Silicon carbide cellular level power integrated chip structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030173624A1 (en) * 2002-02-23 2003-09-18 Fairchild Korea Semiconductor Ltd. High breakdown voltage low on-resistance lateral DMOS transistor
US20040159891A1 (en) * 2003-02-18 2004-08-19 Kabushiki Kaisha Toshiba Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69834315T2 (en) 1998-02-10 2007-01-18 Stmicroelectronics S.R.L., Agrate Brianza Integrated circuit with a VDMOS transistor, which is protected against overvoltages between source and gate
US6924531B2 (en) * 2003-10-01 2005-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. LDMOS device with isolation guard rings

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030173624A1 (en) * 2002-02-23 2003-09-18 Fairchild Korea Semiconductor Ltd. High breakdown voltage low on-resistance lateral DMOS transistor
US20040159891A1 (en) * 2003-02-18 2004-08-19 Kabushiki Kaisha Toshiba Semiconductor device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PARTHASARATHY V ET AL: "Drain profile engineering of resurf LDMOS devices for ESD ruggedness", PROCEEDINGS OF THE 14TH. INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS. ISPSD'02. SANTA FE, NM, JUNE 4 - 7, 2002; [INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S], NEW YORK, NY : IEEE, US, 4 June 2002 (2002-06-04), pages 265 - 268, XP010591617, ISBN: 978-0-7803-7318-1 *
See also references of WO2007011354A1 *

Also Published As

Publication number Publication date
JP2009502041A (en) 2009-01-22
KR100985373B1 (en) 2010-10-04
WO2007011354A1 (en) 2007-01-25
KR20080033423A (en) 2008-04-16
EP1908121A1 (en) 2008-04-09

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