EP1902154B1 - Appareil pour le depot pecvd d'une couche barriere interne sur un recipient, comprenant un dispositif d'analyse optique du plasma - Google Patents

Appareil pour le depot pecvd d'une couche barriere interne sur un recipient, comprenant un dispositif d'analyse optique du plasma Download PDF

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Publication number
EP1902154B1
EP1902154B1 EP06778870A EP06778870A EP1902154B1 EP 1902154 B1 EP1902154 B1 EP 1902154B1 EP 06778870 A EP06778870 A EP 06778870A EP 06778870 A EP06778870 A EP 06778870A EP 1902154 B1 EP1902154 B1 EP 1902154B1
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EP
European Patent Office
Prior art keywords
plasma
receptacle
opening
outside
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
Application number
EP06778870A
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German (de)
English (en)
French (fr)
Other versions
EP1902154A2 (fr
Inventor
Jean-Michel c/o Sidel Participations RIUS
Guy c/o Sidel Participations FEUILLOLEY
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sidel Participations SAS
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Sidel Participations SAS
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Publication of EP1902154A2 publication Critical patent/EP1902154A2/fr
Application granted granted Critical
Publication of EP1902154B1 publication Critical patent/EP1902154B1/fr
Not-in-force legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0012—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry
    • H05H1/0025—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry by using photoelectric means

Definitions

  • the invention relates to the manufacture of containers, and more particularly to polymer containers, coated on an inner wall with a layer comprising a barrier material.
  • Such a layer for example made of hydrogenated amorphous carbon, of the hard type (DLC: Diamond like carbon) or soft type (PLC: polymer like carbon) is conventionally formed by vapor phase activated plasma deposition (PECVD: Plasma Enhanced Chemical Vapor Deposition).
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • reaction may optionally be implemented, depending on the material that it is desired to deposit on the inner wall of the container.
  • acetylene precursor gas C 2 H 2
  • a partial vacuum about 0.1 mbar
  • UHF electromagnetic microwave excitation
  • the species generated is hydrogenated carbon (with CH, CH 2 and CH 3 bonds) which is deposited in a thin layer (approximately 1600 Angstroms thick) on the polymer substrate formed by the inner wall of the container.
  • the document EP 1,500,600 also describes a similar type of device.
  • the invention provides an apparatus for vapor phase activated plasma deposition (PECVD) of a thin layer of a barrier material on an inner wall of a container, which apparatus is defined by the any of claims 1 to 6.
  • PECVD vapor phase activated plasma deposition
  • the apparatus comprises a tube. It may be a tubular injector through the neck of the container for the introduction into it of a precursor gas, and which has an internal opening opening into the container.
  • the frame may comprise an orifice which is formed in a confinement grid of a post-discharge zone outside the container.
  • the apparatus comprises for example a system suction of gases from the plasma through said grid.
  • PECVD vapor phase activated plasma deposition
  • This apparatus 1 comprises a frame 5 intended to receive the container 3.
  • This frame 5 comprises a substantially cylindrical cavity 6 with conductive walls, for example made of metal, which encloses an enclosure 7 defined by a cylindrical wall made of a material transparent to microparticles.
  • electromagnetic waves for example quartz, enclosure in which is placed the container 3 to be treated.
  • the frame 5 also comprises a perforated head 8, surmounting the cavity 6, and which defines, directly above the enclosure 7, a post-discharge zone 9 connected to an evacuation 10.
  • the apparatus 1 further comprises an electromagnetic microwave generator, connected to the cavity 6 by a waveguide 12 partially shown in the figures.
  • the container 3 is suspended by its neck 4 in the chamber 7 by means of a support block 13 provided with seals sealing between the container 3 and the cylinder head 8.
  • the apparatus 1 is equipped with a vacuum pump (not shown) connected on the one hand inside the enclosure 7 and on the other hand inside the container 3 via the post-discharge zone 9 .
  • the apparatus 1 further comprises a tubular injector 14 which extends vertically through the cover 11 and the cylinder head 8 passing through the post-discharge zone 9 to terminate in the container 3.
  • the injector 14 has one end lower internal defining an internal opening 15 which opens into the container 3, and an opposite upper inner end defining an external opening 16, which opens out of the frame 5.
  • the injector 14 has an axis A1, which is the axis of symmetry of revolution of the inner surface delimiting the central passage of the injector 14, and this axis A1 coincides with a vertical axis of general symmetry of the container 3 when it is received in the enclosure 7.
  • precursor gas such as acetylene
  • the treatment of the container 3 for the formation of an internal barrier layer is carried out as follows.
  • the container 3 begins by making a partial vacuum (about 0.1 mbar) to both in the container 3 and in the chamber 7, so as to maintain a pressure equilibrium on both sides of the wall of the container 3.
  • a partial vacuum about 0.1 mbar
  • the interior of the container 3 is then swept by means of the precursor gas, via the injector 14.
  • a flow of low power 2.5 GHz UHF electromagnetic microwaves (a few hundred watts) is then generated, by means of which one active in the precursor gas injected a cold plasma (which causes a small temperature rise, lower than the glass transition temperature of the polymer in which the container 3 is made).
  • the plasma invades an area 18, called the plasma presence zone, including the internal volume of the container 3 and the post-discharge zone 9 defined by the cylinder head 8.
  • the microwave flow is maintained for a period of a few seconds (for example of the order of 3 seconds), during which the species formed in the plasma are deposited on the inner wall 2 of the container 3 to form a thin layer of hydrogenated amorphous carbon, PLC type. Then the flow of microwaves is stopped, and the gas from the plasma is sucked towards the evacuation 10.
  • the plasma is analyzed for consistency and detected which species are generated to take appropriate action (such as ejection of container 3) when among these species there is a - or several - unwanted species (eg oxygen or nitrogen).
  • the senor 21 is placed at the upper end of the injector 14, facing the external opening 16, in the axis A1 of the injector, so as to be in direct optical contact with the interior of the container 3.
  • the window 23 is not subject to any pollution by the generated species. In other words, no carbon deposit is formed on the window 23.
  • photons generated by the plasma up the injector 14 (with an internal diameter of between 4 and 5 mm approximately) and reach the sensor 21 through the window 23: the assembly thus makes it possible to observe the plasma optically, the spectrometer 20 then making it possible to conduct the analysis.
  • the apparatus 1 comprises a tube 24 mounted on and transversely crossing the cylinder head 8.
  • the senor 21 is mounted near the outer opening 26 at the second end of the tube 24, in the axis A2 thereof, so as to be in direct optical contact with the post-discharge zone 9, which is invaded by plasma during activation of it.
  • a port 27 with wide bandwidth is interposed between the sensor 21 and the outer opening 26 of the tube 24.
  • the plasma is directly observed, the optical analysis thereof being carried out by means of the spectrometer 20.
  • the deposit of species on the porthole 27 is limited, on the one hand, by the fact that the diameter of the tube 24 is small compared to the sectional dimensions of the post-discharge zone 9 and the evacuation 10 (in the illustrated embodiment, the internal diameter of the tube 24 is between 4 and 5 mm) and, secondly, by the fact that once the flow of microwaves has been stopped, the suction of the gases from the plasma establishes a fluidic stream directed from the inside of the container 3 and the post-discharge zone 9 towards the outlet 10, that is to say opposite the tube 24.
  • the post-discharge zone 9 is bordered by a grid 28 which confines the plasma in this zone 9 while putting it in communication with the evacuation 10.
  • the grid 28 has a plurality of holes 29 through which pass the gases from the plasma, under the effect of a fluidic current (materialized by arrows on the figure 3 ) generated by a system (not shown) of gas suction.
  • the sensor 21 is integrated in the yoke 8 in the axis A3 of one of the holes 29, so as to be in direct optical contact with the post-discharge zone 9, possibly with the interposition of a window 32 as in the first two embodiments. Since the gate 28 has a function of confining the plasma, the window 32 is not reached by the latter, so that no deposit of species can form there, which would be likely to interfere with the measurements.
  • the apparatus 1 is provided with an orifice (in the first embodiment, this orifice is constituted by the tubular injector 14, in the second by the tube 24 reported and in the third by one of the holes 29 in the gate 28 of confinement) through which the plasma is observed by means of the sensor 21 oriented in the axis A1, A2 or A3 of 1 ' orifice in the direction of the plasma presence zone 18, the analysis thereof being carried out by means of the spectrometer 20.
  • this orifice in the first embodiment, this orifice is constituted by the tubular injector 14, in the second by the tube 24 reported and in the third by one of the holes 29 in the gate 28 of confinement
  • the plasma is observed by means of the sensor 21 oriented in the axis A1, A2 or A3 of 1 ' orifice in the direction of the plasma presence zone 18, the analysis thereof being carried out by means of the spectrometer 20.
  • Such an arrangement makes it possible to analyze the plasma while avoiding (or limiting) the risk that a deposit of species originating from the plasma will distort the measurements recorded by the sensor 21.
  • the relevance of the plasma analysis is found increased, especially for the quality of the treated containers.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
  • Sampling And Sample Adjustment (AREA)
EP06778870A 2005-07-13 2006-07-12 Appareil pour le depot pecvd d'une couche barriere interne sur un recipient, comprenant un dispositif d'analyse optique du plasma Not-in-force EP1902154B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0507555A FR2888587B1 (fr) 2005-07-13 2005-07-13 Appareil pour le depot pecvd d'une couche barriere interne sur un recipient, comprenant un dispositif d'analyse optique du plasma
PCT/FR2006/001703 WO2007006977A2 (fr) 2005-07-13 2006-07-12 Appareil pour le depot pecvd d'une couche barriere interne sur un recipient, comprenant un dispositif d'analyse optique du plasma

Publications (2)

Publication Number Publication Date
EP1902154A2 EP1902154A2 (fr) 2008-03-26
EP1902154B1 true EP1902154B1 (fr) 2010-12-15

Family

ID=36406267

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06778870A Not-in-force EP1902154B1 (fr) 2005-07-13 2006-07-12 Appareil pour le depot pecvd d'une couche barriere interne sur un recipient, comprenant un dispositif d'analyse optique du plasma

Country Status (9)

Country Link
US (1) US8826853B2 (zh)
EP (1) EP1902154B1 (zh)
JP (1) JP4791543B2 (zh)
CN (1) CN101223297B (zh)
AT (1) ATE491824T1 (zh)
DE (1) DE602006018928D1 (zh)
ES (1) ES2357482T3 (zh)
FR (1) FR2888587B1 (zh)
WO (1) WO2007006977A2 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2683836B1 (en) 2011-03-10 2021-02-17 Kaiatech, Inc. Method and apparatus for treating containers
CN103103495B (zh) * 2011-11-11 2015-01-14 中国科学院沈阳科学仪器研制中心有限公司 一种全自动下传输系统
FR3035881B1 (fr) * 2015-05-04 2019-09-27 Sidel Participations Installation pour le traitement de recipients par plasma micro-ondes, comprenant un generateur a etat solide

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1541499A (fr) * 1966-10-31 1968-10-04 Air Reduction Procédé et appareil de contrôle de la densité d'une vapeur par spectroscopie
JPS57161063A (en) * 1981-03-31 1982-10-04 Nippon Sheet Glass Co Ltd Method and device for sticking metallic oxide film on substrate
JPS61130485A (ja) * 1984-11-28 1986-06-18 Mitsubishi Electric Corp 真空モニタ装置
JPS6293382A (ja) * 1985-10-21 1987-04-28 Mitsubishi Electric Corp 薄膜形成装置
CO4370034A1 (es) * 1994-02-16 1996-10-07 Coca Cola Co Metodo y sistemas para la formacion de un recubrimiento sobre superficies de recipientes
US5521351A (en) * 1994-08-30 1996-05-28 Wisconsin Alumni Research Foundation Method and apparatus for plasma surface treatment of the interior of hollow forms
US5522351A (en) * 1995-05-22 1996-06-04 Brunswick Corporation Internal combustion engine temperature control system
US6112695A (en) * 1996-10-08 2000-09-05 Nano Scale Surface Systems, Inc. Apparatus for plasma deposition of a thin film onto the interior surface of a container
FR2776540B1 (fr) 1998-03-27 2000-06-02 Sidel Sa Recipient en matiere a effet barriere et procede et appareil pour sa fabrication
TW492106B (en) * 2000-06-20 2002-06-21 Hitachi Ltd Inspection method for thickness of film to be processed using luminous beam-splitter and method of film processing
WO2003091121A1 (fr) * 2002-04-26 2003-11-06 Hokkai Can Co., Ltd. Recipients en plastique comportant un revetement sur leur surface interieure et procede de production de ces recipients
DE10341513B4 (de) * 2002-09-06 2010-10-07 Von Ardenne Anlagentechnik Gmbh Verfahren zur Regelung des Reaktivgasflusses in reaktiven plasmagestützten Vakuumbeschichtungsprozessen
JP2004137556A (ja) * 2002-10-17 2004-05-13 Renesas Technology Corp 半導体製造装置
FR2872148B1 (fr) * 2004-06-24 2006-09-22 Sidel Sas Machine de traitement de bouteilles equipee d'une cartouche de raccordement interchangeable

Also Published As

Publication number Publication date
CN101223297A (zh) 2008-07-16
ES2357482T3 (es) 2011-04-26
ATE491824T1 (de) 2011-01-15
JP2009501277A (ja) 2009-01-15
US20090133626A1 (en) 2009-05-28
CN101223297B (zh) 2010-09-22
DE602006018928D1 (de) 2011-01-27
JP4791543B2 (ja) 2011-10-12
WO2007006977A3 (fr) 2007-03-22
FR2888587A1 (fr) 2007-01-19
US8826853B2 (en) 2014-09-09
EP1902154A2 (fr) 2008-03-26
WO2007006977A2 (fr) 2007-01-18
FR2888587B1 (fr) 2007-10-05

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