EP1889953A4 - Process for producing silicon carbide single crystal - Google Patents

Process for producing silicon carbide single crystal

Info

Publication number
EP1889953A4
EP1889953A4 EP06756481.5A EP06756481A EP1889953A4 EP 1889953 A4 EP1889953 A4 EP 1889953A4 EP 06756481 A EP06756481 A EP 06756481A EP 1889953 A4 EP1889953 A4 EP 1889953A4
Authority
EP
European Patent Office
Prior art keywords
single crystal
silicon carbide
carbide single
producing silicon
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06756481.5A
Other languages
German (de)
French (fr)
Other versions
EP1889953A1 (en
Inventor
Takamitsu Kawahara
Hiroyuki Nagasawa
Naoki Hatta
Kuniaki Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of EP1889953A1 publication Critical patent/EP1889953A1/en
Publication of EP1889953A4 publication Critical patent/EP1889953A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
EP06756481.5A 2005-06-07 2006-05-23 Process for producing silicon carbide single crystal Withdrawn EP1889953A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005167326A JP4628189B2 (en) 2005-06-07 2005-06-07 Method for producing silicon carbide single crystal
PCT/JP2006/310225 WO2006132082A1 (en) 2005-06-07 2006-05-23 Process for producing silicon carbide single crystal

Publications (2)

Publication Number Publication Date
EP1889953A1 EP1889953A1 (en) 2008-02-20
EP1889953A4 true EP1889953A4 (en) 2014-03-19

Family

ID=37498286

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06756481.5A Withdrawn EP1889953A4 (en) 2005-06-07 2006-05-23 Process for producing silicon carbide single crystal

Country Status (7)

Country Link
US (1) US8133321B2 (en)
EP (1) EP1889953A4 (en)
JP (1) JP4628189B2 (en)
KR (1) KR20080009261A (en)
CN (1) CN101120124B (en)
TW (1) TW200708629A (en)
WO (1) WO2006132082A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009032808A (en) * 2007-07-25 2009-02-12 Toshiba Corp Semiconductor device
JP5345499B2 (en) * 2009-10-15 2013-11-20 Ｈｏｙａ株式会社 Compound single crystal and method for producing the same
CN103857765B (en) * 2011-10-07 2015-11-25 旭硝子株式会社 Monocrystalline silicon carbide substrate and lapping liquid
JP6380663B2 (en) * 2015-04-17 2018-08-29 富士電機株式会社 Semiconductor manufacturing method and SiC substrate
CN104947181B (en) * 2015-07-07 2017-11-14 山东大学 A kind of method for reducing physical vapor transport growth SiC single crystal middle position dislocation density
JP6953843B2 (en) * 2017-07-07 2021-10-27 セイコーエプソン株式会社 Single crystal substrate and silicon carbide substrate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1143033A2 (en) * 2000-04-07 2001-10-10 Hoya Corporation Silicon carbide and method for producing the same
EP1288347A2 (en) * 2001-08-27 2003-03-05 Hoya Corporation Method of manufacturing compund single crystal
EP1288346A2 (en) * 2001-08-27 2003-03-05 Hoya Corporation Method of manufacturing compound single crystal

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6335546B1 (en) * 1998-07-31 2002-01-01 Sharp Kabushiki Kaisha Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device
JP3576432B2 (en) * 1998-10-10 2004-10-13 Ｈｏｙａ株式会社 Silicon carbide film and method of manufacturing the same
EP1130135B1 (en) * 1999-10-08 2007-08-08 Hoya Corporation Silicon carbide film and method for manufacturing the same
US6475456B2 (en) * 2000-02-29 2002-11-05 Hoya Corporation Silicon carbide film and method for manufacturing the same
JP4563609B2 (en) * 2000-04-07 2010-10-13 Ｈｏｙａ株式会社 Method for producing silicon carbide
JP3754294B2 (en) * 2000-12-28 2006-03-08 株式会社東芝 Method for manufacturing silicon carbide single crystal substrate and method for manufacturing semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1143033A2 (en) * 2000-04-07 2001-10-10 Hoya Corporation Silicon carbide and method for producing the same
EP1288347A2 (en) * 2001-08-27 2003-03-05 Hoya Corporation Method of manufacturing compund single crystal
EP1288346A2 (en) * 2001-08-27 2003-03-05 Hoya Corporation Method of manufacturing compound single crystal

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2006132082A1 *

Also Published As

Publication number Publication date
EP1889953A1 (en) 2008-02-20
CN101120124A (en) 2008-02-06
JP4628189B2 (en) 2011-02-09
TW200708629A (en) 2007-03-01
KR20080009261A (en) 2008-01-28
US8133321B2 (en) 2012-03-13
TWI333509B (en) 2010-11-21
JP2006342010A (en) 2006-12-21
CN101120124B (en) 2012-05-23
US20080289570A1 (en) 2008-11-27
WO2006132082A1 (en) 2006-12-14

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