EP1889953A4 - Process for producing silicon carbide single crystal - Google Patents
Process for producing silicon carbide single crystalInfo
- Publication number
- EP1889953A4 EP1889953A4 EP06756481.5A EP06756481A EP1889953A4 EP 1889953 A4 EP1889953 A4 EP 1889953A4 EP 06756481 A EP06756481 A EP 06756481A EP 1889953 A4 EP1889953 A4 EP 1889953A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- single crystal
- silicon carbide
- carbide single
- producing silicon
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005167326A JP4628189B2 (en) | 2005-06-07 | 2005-06-07 | Method for producing silicon carbide single crystal |
PCT/JP2006/310225 WO2006132082A1 (en) | 2005-06-07 | 2006-05-23 | Process for producing silicon carbide single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1889953A1 EP1889953A1 (en) | 2008-02-20 |
EP1889953A4 true EP1889953A4 (en) | 2014-03-19 |
Family
ID=37498286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP06756481.5A Withdrawn EP1889953A4 (en) | 2005-06-07 | 2006-05-23 | Process for producing silicon carbide single crystal |
Country Status (7)
Country | Link |
---|---|
US (1) | US8133321B2 (en) |
EP (1) | EP1889953A4 (en) |
JP (1) | JP4628189B2 (en) |
KR (1) | KR20080009261A (en) |
CN (1) | CN101120124B (en) |
TW (1) | TW200708629A (en) |
WO (1) | WO2006132082A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009032808A (en) * | 2007-07-25 | 2009-02-12 | Toshiba Corp | Semiconductor device |
JP5345499B2 (en) * | 2009-10-15 | 2013-11-20 | Hoya株式会社 | Compound single crystal and method for producing the same |
DE112012004193T5 (en) * | 2011-10-07 | 2014-07-03 | Asahi Glass Co., Ltd. | Silicon carbide single crystal substrate and polishing solution |
WO2016166939A1 (en) * | 2015-04-17 | 2016-10-20 | 富士電機株式会社 | Semiconductor manufacturing method and sic substrate |
CN104947181B (en) * | 2015-07-07 | 2017-11-14 | 山东大学 | A kind of method for reducing physical vapor transport growth SiC single crystal middle position dislocation density |
JP6953843B2 (en) * | 2017-07-07 | 2021-10-27 | セイコーエプソン株式会社 | Single crystal substrate and silicon carbide substrate |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1143033A2 (en) * | 2000-04-07 | 2001-10-10 | Hoya Corporation | Silicon carbide and method for producing the same |
EP1288346A2 (en) * | 2001-08-27 | 2003-03-05 | Hoya Corporation | Method of manufacturing compound single crystal |
EP1288347A2 (en) * | 2001-08-27 | 2003-03-05 | Hoya Corporation | Method of manufacturing compund single crystal |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6335546B1 (en) * | 1998-07-31 | 2002-01-01 | Sharp Kabushiki Kaisha | Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device |
JP3576432B2 (en) * | 1998-10-10 | 2004-10-13 | Hoya株式会社 | Silicon carbide film and method of manufacturing the same |
EP1130135B1 (en) * | 1999-10-08 | 2007-08-08 | Hoya Corporation | Silicon carbide film and method for manufacturing the same |
US6475456B2 (en) * | 2000-02-29 | 2002-11-05 | Hoya Corporation | Silicon carbide film and method for manufacturing the same |
JP4563609B2 (en) * | 2000-04-07 | 2010-10-13 | Hoya株式会社 | Method for producing silicon carbide |
JP3754294B2 (en) * | 2000-12-28 | 2006-03-08 | 株式会社東芝 | Method for manufacturing silicon carbide single crystal substrate and method for manufacturing semiconductor device |
-
2005
- 2005-06-07 JP JP2005167326A patent/JP4628189B2/en active Active
-
2006
- 2006-05-23 WO PCT/JP2006/310225 patent/WO2006132082A1/en active Application Filing
- 2006-05-23 CN CN2006800048165A patent/CN101120124B/en not_active Expired - Fee Related
- 2006-05-23 KR KR1020077018190A patent/KR20080009261A/en active IP Right Grant
- 2006-05-23 US US11/886,065 patent/US8133321B2/en not_active Expired - Fee Related
- 2006-05-23 EP EP06756481.5A patent/EP1889953A4/en not_active Withdrawn
- 2006-06-06 TW TW095119993A patent/TW200708629A/en not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1143033A2 (en) * | 2000-04-07 | 2001-10-10 | Hoya Corporation | Silicon carbide and method for producing the same |
EP1288346A2 (en) * | 2001-08-27 | 2003-03-05 | Hoya Corporation | Method of manufacturing compound single crystal |
EP1288347A2 (en) * | 2001-08-27 | 2003-03-05 | Hoya Corporation | Method of manufacturing compund single crystal |
Non-Patent Citations (1)
Title |
---|
See also references of WO2006132082A1 * |
Also Published As
Publication number | Publication date |
---|---|
TWI333509B (en) | 2010-11-21 |
US8133321B2 (en) | 2012-03-13 |
CN101120124A (en) | 2008-02-06 |
US20080289570A1 (en) | 2008-11-27 |
WO2006132082A1 (en) | 2006-12-14 |
TW200708629A (en) | 2007-03-01 |
KR20080009261A (en) | 2008-01-28 |
EP1889953A1 (en) | 2008-02-20 |
CN101120124B (en) | 2012-05-23 |
JP4628189B2 (en) | 2011-02-09 |
JP2006342010A (en) | 2006-12-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1895031A4 (en) | Process for producing silicon carbide single crystal | |
TWI370855B (en) | Method for producing silicon carbide single crystal | |
EP1978137A4 (en) | PROCESS FOR PRODUCING SiC SINGLE CRYSTAL | |
EP1806437A4 (en) | Method for preparing silicon carbide single crystal | |
EP1855312A4 (en) | PROCESS FOR PRODUCING SiC SINGLE-CRYSTAL SUBSTRATE | |
TWI346356B (en) | Process for producing silicon wafer | |
EP2083099A4 (en) | Process for producing group iii element nitride crystal | |
EP1895573A4 (en) | Silicon carbide single-crystal wafer and process for producing the same | |
EP2088626A4 (en) | Process for producing silicon carbide semiconductor device | |
EP2297033A4 (en) | Process for producing silicon carbide | |
EP1739211A4 (en) | METHOD FOR PRODUCING SILICON CARBIDE (SiC) SINGLE CRYSTAL AND SILICON CARBIDE (SiC) SINGLE CRYSTAL OBTAINED BY SUCH METHOD | |
HK1100100A1 (en) | Process for producing group III nitride substrate | |
EP1766107A4 (en) | Process for producing a crystalline silicon ingot | |
EP1882675A4 (en) | Method for producing silicon | |
EP1820777A4 (en) | Process for producing polycrystalline silicon ingot | |
EP1828170A4 (en) | Process for preparing voriconazole | |
EP2083448A4 (en) | Silicon carbide semiconductor device and process for producing the same | |
EP1813700A4 (en) | Apparatus for crystal production | |
EP2141267A4 (en) | Process for producing group iii nitride crystal | |
EP1933386A4 (en) | Process for producing silicon carbide semiconductor device | |
EP1975283A4 (en) | Process for producing silicon single crystal wafer | |
EP2006269A4 (en) | Porous silicon carbide and process for producing the same | |
EP1852527A4 (en) | Silicon carbide single crystal, silicon carbide single crystal wafer, and process for producing the same | |
EP2056340A4 (en) | Method for producing silicon carbide substrate and silicon carbide substrate | |
EP1930486A4 (en) | Process for producing semiconductor substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20070911 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): DE FR GB NL SE |
|
RBV | Designated contracting states (corrected) |
Designated state(s): DE FR GB NL SE |
|
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20140213 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: C23C 16/32 20060101ALI20140207BHEP Ipc: C30B 23/02 20060101ALI20140207BHEP Ipc: C30B 25/02 20060101ALI20140207BHEP Ipc: C30B 25/18 20060101ALI20140207BHEP Ipc: C23C 16/455 20060101ALI20140207BHEP Ipc: C23C 16/02 20060101ALI20140207BHEP Ipc: C30B 29/36 20060101AFI20140207BHEP |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN |
|
18W | Application withdrawn |
Effective date: 20140320 |