EP1841713A1 - Procede de preparation de ceramiques semi-conductrices constituees d'oxydes de metaux tel que l'etain en particulier pour les varistances - Google Patents
Procede de preparation de ceramiques semi-conductrices constituees d'oxydes de metaux tel que l'etain en particulier pour les varistancesInfo
- Publication number
- EP1841713A1 EP1841713A1 EP06709425A EP06709425A EP1841713A1 EP 1841713 A1 EP1841713 A1 EP 1841713A1 EP 06709425 A EP06709425 A EP 06709425A EP 06709425 A EP06709425 A EP 06709425A EP 1841713 A1 EP1841713 A1 EP 1841713A1
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- EP
- European Patent Office
- Prior art keywords
- metal
- powder
- doping
- metals
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/653—Processes involving a melting step
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- C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
- C01B13/14—Methods for preparing oxides or hydroxides in general
- C01B13/32—Methods for preparing oxides or hydroxides in general by oxidation or hydrolysis of elements or compounds in the liquid or solid state or in non-aqueous solution, e.g. sol-gel process
- C01B13/322—Methods for preparing oxides or hydroxides in general by oxidation or hydrolysis of elements or compounds in the liquid or solid state or in non-aqueous solution, e.g. sol-gel process of elements or compounds in the solid state
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- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
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- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
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- H—ELECTRICITY
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- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
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- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
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Definitions
- the invention relates to a process for the preparation of semiconductor ceramics consisting of metal oxides, more specifically semi - conducting ceramics consisting of one or more base metal oxides such as tin oxide SnO 2 and one or more dopant metal oxides.
- semiconductor ceramics whether they are solid or in the form of thin layers, are used in particular to manufacture nonlinear resistors depending on the voltage, and in particular varistors or varistors which are used for example in arresters at low, medium and high voltage or voltage limiting elements associated for example with electrical or electronic equipment.
- the technical field of the invention can thus be defined in a very general manner as that of ceramics based on metal oxides and their preparation, and more particularly as that of ceramics having a nonlinear resistance according to the voltage such that varistors.
- Voltage-dependent non-linear resistors such as varistors, based on silicon carbide, selenium rectifiers and pn junction diodes made of silicon or germanium have have been widely used for voltage stabilization of electrical circuits or the suppression of normally high overvoltages induced in electrical circuits.
- the electrical characteristics of such a nonlinear resistance include:
- the resistances consist of zinc oxide ZnO sintered masses optionally comprising one or more additives or dopants chosen for example from metal oxides.
- FR-A-2 174 176 and FR-A-2 194 026 describe varistors formed by a sintered mass consisting essentially of ZnO with as additives Bi 2 O 3 , Sb 2 O 3 and Co 3 O 4 .
- VARELA A new SnO 2 -based varistor System which describes in particular a varistor composition comprising in mol%: 98.9% of SnO 2 , 1% of CoO, 0.05% of Nb 2 O 5 and 0.05% of Cr 2 O 3 .
- BR-A-96 00174-7 discloses metal oxide compositions for varistors consisting essentially of tin oxide (SnO 2 ) doped with various metal oxides such as cobalt oxide, and niobium oxide. .
- a typical composition consists of 97, 5 to
- semiconductor ceramic materials for semi-conducting ceramic varistors or pellets used for overvoltage protection are generally prepared from the oxides which constitute them, in pulverulent form and then shaped and sintering.
- semi ⁇ ceramic materials most widely used currently conductors which are based on ZnO, are prepared from of pulverulent oxides constituted the majority oxide which is ZnO and doping oxides such as oxides of nickel, chromium, manganese, magnesium, bismuth, antimony, silicon, cobalt, etc.
- SnO 2 -based semiconductor ceramics are prepared in the same way, possibly by adapting the nature and quantity of the dopants.
- the ODAP process is described in document FR-A-2 674 157 and with certain variations with respect to document FR-A-2 674 157, in document EP-A1-0 580 912, as well as in document US-A. -5, 322, 642.
- the basic elements or raw materials for obtaining the powder intended to give the semiconductor ceramic are no longer metal oxides but alloys or mixtures of metals which are then only oxidized in the solid phase either in the liquid phase or in the vapor phase.
- the ODAP method described for example in document FR-A-2 674 157, comprises the following successive steps:
- each of the particles is homogeneous; oxidizing said particles.
- the ingot obtained may be reduced to powder by grinding or shavings by machining so that the ingot, powder or chips may be left under an appropriate atmosphere for their oxidation.
- the oxide powder obtained is compacted for example in the form of a pellet and the compacted product is sintered at a temperature greater than or equal to 800 ° C. .
- This process is particularly applicable to the fabrication of zinc oxide semiconductors doped with Ni, Cr, Mg, Mn, Bi, Sb, Co oxides.
- the determined particle size powder can be obtained by direct spraying the recovered liquid alloy or by casting the liquid alloy into an ingot mold in a neutral or reducing atmosphere followed by melting the ingot into a liquid alloy which is pulverized and quenched to obtain fine elements or solid grains of homogeneous composition.
- ODAP ODAP
- the process known as "ODAP”, described for example in document FR-A-2 674 157 and in document EP-A1-0 580 912 allows, without having recourse to one or more steps of grinding and mixing, often sources of pollution, to obtain a perfectly homogeneous oxide powder mixture which can never be obtained by the traditional processes implementing major grinding and heating facilities.
- the perfectly homogeneous powder obtained has a homogeneity at a molecular level which has never been reached until then.
- the powder consisting exclusively of oxides subjected to shaping then to sintering is prepared by a conventional method, or by the ODAP process, it is found that the ceramics obtained always have a low, insufficient density, and consequently, mechanical and thermal properties that are not satisfactory.
- the object of the present invention is to provide a process for the preparation of ceramics comprising, preferably consisting of metal oxides, which meets among others the needs listed above.
- the object of the present invention is furthermore to provide a process for the preparation of ceramics, preferably containing metal oxides which does not have the disadvantages, limitations, defects and disadvantages of the processes of the prior art, and which solve the problems of the processes of the prior art.
- a process for preparing a semiconductor ceramic comprising, preferably consisting of, at least one base metal oxide which is a single oxide. of a single base metal, and at least one doping metal oxide, said ceramic having a porosity of less than or equal to 5%, preferably less than or equal to 3%, more preferably less than or equal to 1%, in which the following successive steps are carried out:
- a powder consisting of one or more base metal oxides is provided, the oxide or oxides being simple oxides, a single base metal, one or more base metals in unoxidized metal form, one or more oxides of doping metals, and optionally one or more doping metals in unoxidized metal form;
- said powder is shaped
- the formed powder is sintered.
- the powder which is shaped, compacted is a composite which consists of metal (metals) and metal oxide (s).
- the compacted, shaped powders are mixtures of metal (metals) and metal oxides, which are preferably obtained by partial oxidation of metal powders.
- the raw ceramic (before sintering and after forming) contains one or more base metals, and optionally one or more doping metals, which is never the case in the prior art, and which does not is in no way suggested in the prior art.
- the ceramic obtained also has improved mechanical and thermal properties, particularly as regards its mechanical strength and heat dissipation capacity.
- the electrical characteristics (E s and OC) of the varistors comprising the ceramics obtained by the process of the invention are also excellent, improved with respect to ceramics obtained by sintering powders consisting solely of oxides.
- the powder consists of from 50% to 99.9% by weight of oxides, preferably from 55 to 80% or 85% by weight of oxides, more preferably from 60 to 70% by weight of oxides (from or base metals and doping metal or metals) the effects described above relating to the mechanical, thermal and electrical properties are particularly marked.
- the semiconductive ceramic is a ceramic which can be described as nonporous, that is to say that it generally has a porosity of less than or equal to 5%, preferably less than or equal to 3%, more preferably less than or equal to 1%.
- This non-porosity is due to the presence of unoxidized metal.
- porosity is mandatory in order to avoid local degradation of the ceramic, especially when it is implemented as a varistor. This degradation being for example due to the rise in pressure of the gases in the cells constituting said porosity, under the effect of dielectric stresses.
- This value of the porosity also makes it possible to improve the electrical and dielectric performances of the semiconductor ceramic, in particular when it is used in varistors.
- the at least one base metal oxide of the semiconductor ceramic is a single oxide, ie an oxide of a single metal, a monometallic oxide, and not a mixed, multimetal oxide of several metals.
- the at least one base metal oxide is preferably selected from SnO 2 and ZnO.
- the ceramic comprises several base metal oxides then each of them is a single, separate oxide, and they do not form in the multimetal mixed oxide ceramic.
- the at least one base metal oxide is a single oxide, a single metal oxide.
- the at least one dopant metal oxide in the ceramic may be a mixed oxide, a multimetal oxide, an oxide of several metals; or a simple, monometallic oxide. It is the same for the oxides of doping metals in the powder.
- each of these oxides may be a single monometallic oxide or a mixed multimetal oxide, the metals entering into said multimetal oxide being all doping metals.
- a base metal oxide when reference is made to a base metal oxide, it is, unless explicitly stated otherwise, a single oxide of a single base metal, and when With reference to a doping metal oxide, it may be a single oxide of a single metal or a mixed oxide of several metals.
- the base metal (s), the base metal oxide (s), the doping metal oxide (s), or the doping metal (s) of the powder are each generally in a powder form in the form of generally spherical particles.
- the powder has a particle size which is generally submicron in medium size (eg, average diameter) particles.
- the base metal oxide (s), the base metal (s), the doping metal oxide (s) and the doping metal (s), may be present in the powder in one or more of the following forms: base metal oxide particles;
- unoxidized base metal particles optionally, particles of non-oxidized doping metal;
- particles having a core-shell structure with a core consisting of a base metal and one or more doping metals, and a shell consisting of an oxide of said base metal doped with one or more oxides of doping metals;
- Each of these oxides and unoxidized metals of the powder may be prepared by a conventional method known to those skilled in the art or commercially acquired.
- oxides and metals may be prepared simultaneously by the same process or commercially acquired.
- base metals and the doping metals can each be independently prepared by performing the following successive steps:
- the base metal or the doping metal is placed in a crucible; the base metal or doping metal is melted so as to obtain base metal or liquid doping metal;
- a basic metal powder or doping metal powder of determined particle size is prepared from the base metal or the liquid doping metal.
- one or more of the base metal oxides or the doping metal oxides can each be independently prepared by performing the following successive steps:
- a metal or doping metal is placed in a crucible
- the metal or doping metal is melted, so as to obtain metal or liquid doping metal;
- a metal or doping metal powder of a given particle size is prepared from the metal or the liquid doping metal;
- the totality of the metal powder or doping metal powder or a specific particle size cutting thereof is totally oxidized.
- the doping metal oxides can each be prepared by an "ODAP" method applied to a metal with all the advantages related to this process which have been mentioned above.
- oxides of base metals are prepared simultaneously, said oxides being, as indicated above, simple oxides, and oxides of doping metals by carrying out the following successive steps: a plurality of metals selected from the base metals and the doping metals are placed in a crucible, the doping metals possibly being in the form of salts thereof; the melting of said metals and salts of possible doping metals placed in the crucible under a neutral or reducing atmosphere, while ensuring a mixing of the metals and salts of possible doping metals in melt so as to obtain a mixture or alloy of metals, liquid homogeneous;
- the doping metals possibly being in the form of salts thereof;
- the powder to be shaped is constituted by a base metal, a base metal oxide, one or more oxides of doping metals and optionally one or more doping metals. More preferably, the powder is constituted by a single base metal, an oxide of the same base metal, one or more oxides of doping metals and optionally one or more doping metals.
- the powder may consist of particles of the base metal, oxide particles of said base metal, and particles of one or more oxides of doping metals; or the powder may be constituted by particles having a core-shell structure, with a core constituted by the base metal and one or more doping metals, and a shell consisting of an oxide of said base metal and one or more oxides of doping metals; or else the powder may consist of particles having a core-shell structure with a core constituted by the base metal and a shell constituted by an oxide of said base metal; and particles of doping metal oxides.
- the powder can be prepared by using the following successive steps: the base metal and one or more doping metals and / or one or more salts of these doping metals are placed in a crucible;
- the base metal is melted with said doping metals and / or doping metal salts placed in the crucible under a neutral or reducing atmosphere, while ensuring mixing of the base metal and doping metals and / or doping metal salts; melt to obtain a mixture or alloy of metals, liquid, homogeneous;
- the particles of the metal alloy powder of determined particle size or a specific particle size fraction thereof are partially oxidized to obtain a homogeneous, partially oxidized powder, avoiding coalescence of the particles.
- the powder can be prepared by carrying out the following successive steps: - the base metal is placed in a crucible;
- the base metal is melted so as to obtain liquid base metal; a base metal powder of determined particle size is prepared from the liquid base metal;
- one or more powdered doping metal oxides are added to the partially oxidized base metal powder;
- the partially oxidized base metal powder is mixed with the doping metal oxide (s).
- the "ODAP" process constitutes a preferred mode of preparation for the metal oxides of the powder used according to the invention with all the advantages inherent in this process.
- the at least one oxides of base metals are chosen from zinc, tin, titanium and strontium oxides, and the base metals are chosen from zinc, tin, titanium and strontium;
- the doping metals are chosen from cobalt, chromium, manganese, niobium, tantalum, transition metals such as Zn and metals of the lanthanide family; and the oxides of doping metals are chosen from oxides of cobalt, chromium, manganese, niobium, tantalum, transition metals such as Zn, and metals of the family of lanthanides, and the mixed oxides of the above-mentioned doping metals.
- the base metal (s) are different from the doping metal (s) and the base metal oxides are different from the doping metal oxides.
- the doping metal salt (s) optionally placed in the crucible may likewise be chosen from the salts of the abovementioned metals.
- a particularly preferred base metal is tin for which superior electrical properties are obtained.
- the tin and / or tin oxide may be provided in the form of a commercially available powder or prepared by a conventional method known to those skilled in the art. But the tin and its oxide are preferably prepared in the frame and during one of the "ODAP" type processes described above.
- the powder consisting of metal tin (base metal), tin oxide, one or more oxides of doping metals and optionally one or more doping metals can be prepared. according to the last two preferred methods described above.
- the first of these processes for preparing the powder can be defined as an "ODAP" type process applied to tin and more specifically to an alloy of tin and doping metals and which is used to prepare ceramics. of doped tin oxide.
- the method for preparing the powder and therefore the method according to the invention, including this process for preparing the powder, have all the advantages of the ODAP process already mentioned above.
- the "ODAP" process does not permit the preparation of oxide-based powders and ceramics whose grains are chemically homogeneous at the submicroscopic or molecular scale. , only in the specific case of zinc oxide (ZnO) based powders and ceramics.
- ZnO zinc oxide
- the process for the preparation of the powder, in this first embodiment, is not described in the documents of the prior art in which the preparation of SnO 2 -based powders by the ODAP process and then of ceramics is not mentioned. .
- a fortiori the preparation of powders and ceramics based on SnO 2 comprising doping oxides, preferably specific doping oxides in specific proportions is not described either.
- the varistors obtained have better electrical characteristics than the varistors of the prior art, in particular obtained by the method, "ODAP", for example OC properties. and E s higher than those obtained with varistors based on zinc oxide.
- the electrical characteristics of the varistors prepared by the process according to the invention when the powder is prepared by the process according to this first embodiment are also better than those of the tin dioxide varistors of JP-A-49 108590. , JP-A-49 047898, JP-A-49 129192, JP-A-49 129193, JP-A-05 129106 and JP-A-05 129167 whose OC values are low, and always less than 30.
- This process for preparing the powder used in the process of the invention can be defined generally as being the application of the "ODAP" method to SnO 2.
- the physico - chemical history of a powder is decisive in solid chemistry. Also, the results obtained with this method of preparing the powder used in the context of the process of the invention were unpredictable and absolutely uncertain, because the person skilled in the art knows that the chemistry of tin is very different from that of zinc.
- the ceramic contains as oxides of doping metals one or more oxides selected from oxides of cobalt, manganese , niobium, zinc if the base metal is not zinc, tantalum, and the mixed oxides of these metals together.
- the ceramic contains simultaneously as doping metal oxides both cobalt oxide, manganese oxide, niobium oxide and tantalum oxide.
- the mass proportions of the base metal oxide (s), the base metal (s) in non-oxidized metal form, the doping metal oxide (s), and optionally the doping metal (s) in non-oxidized metal form are such that they make it possible to obtain a ceramic comprising a proportion of base metal oxide (s) greater than or equal to 90% by mass, preferably greater than or equal to 95% by mass, more preferably even greater or equal to 99% by weight, better than 99.995% by weight.
- the mass proportions of the powder of the base metal oxides or oxides, such as tin, of the base metal or metals, such as tin in the non - oxidized metal form, or the oxides of doping metals. , and optionally doping metal or metals in unoxidized metal form are such that they make it possible to obtain a ceramic comprising, in addition to 100% by weight of base metal oxide (s) such as tin, less 10% by weight, preferably less than 5% by weight, more preferably less than 1% and most preferably less than 0.005% by weight of doping metal oxides.
- This percentage of base metal oxide, for example of SnO 2 in the final ceramic, is respected, the mass proportions of the base metal oxide (s), of the base metal (s) in non-oxidized metal form, or of the oxides. doping metals, and optionally doping metal or metals in unoxidized metal form are such that they make it possible to obtain a ceramic comprising in addition to 100% of base metal oxide (s) such as tin one or several of the following oxides in the following mass proportions:
- niobium oxide 0.01 to 0.5%
- tantalum oxide 0.01 to 0.5%
- one or more transition metal oxides 0.01 to 0.5%
- one or more metal oxides of the lanthanide family such as lanthanum oxide.
- the base metal is tin.
- the unexpected adaptation of the "ODAP" process to SnO 2 ceramics is carried out optimally if dopants are preferably added thereto. specific. This optimization is even better if these specific dopants are added in specific proportions, which constitutes a double selection.
- oxides of dopants are chosen from oxides of cobalt, manganese, niobium and tantalum such as Co 3 O 4 , MnO 2 , Nb 2 O 5 and Ta 2 O 5 , preferably in the proportions mentioned above.
- a preferred ceramic will include the addition of all these four doping oxides preferably in the proportions mentioned above.
- this ceramic will have the following mass composition (in% by weight):
- SnO 2 makes it possible to use a smaller number of dopants, these dopants being used in lower overall quantities, and these dopants being furthermore chosen from doping agents which are less polluting, less toxic and cleaner.
- the relative content of dopants relative to the reference oxide in other words with respect to the base metal oxide, is generally 10 times lower in SnO 2 ceramics.
- the percentage of dopants is generally of the order of 2% for SnO 2 -based ceramics, whereas it generally reaches 10% in the case of ZnO-based varistors.
- toxic dopants such as antimony oxide are preferably not used.
- a metal powder of determined particle size When a metal powder of determined particle size is prepared, it can be prepared in the liquid phase by melting the metal into a liquid metal which is sprayed, atomized by a stream of gas or liquid, and cooled, quenched.
- the liquid metal is sprayed, atomized with a stream of neutral or reducing gas such as hydrogen, nitrogen, argon or mixtures thereof.
- neutral or reducing gas such as hydrogen, nitrogen, argon or mixtures thereof.
- the metal powder of determined particle size can be prepared in the solid phase by abrasion or grinding.
- it can be prepared by cooling, Preferably, rapidly, the homogeneous liquid metal mixture or alloy so as to solidify it while maintaining the chemical homogeneity of the liquid metal mixture or alloy (high temperature), and then dividing the solidified homogeneous metal alloy into a powder. of metal alloy of determined particle size.
- the division of the solidified homogeneous alloy can be carried out in the liquid phase by melting it back into a homogeneous liquid metal alloy which is sprayed, atomized with a stream of gas or liquid and cooled rapidly (quenched).
- the metal alloy powder of determined particle size can also be prepared directly from the homogeneous liquid metal alloy from the second stage of the process, by spraying, atomizing with a stream of gas or liquid and cooling rapidly (" tempering "). It is found that the homogeneity of the powder is improved by quenching the metal jet in a cooling fluid.
- the gas stream may be a neutral or reducing gas stream such as hydrogen, nitrogen, argon, or mixtures thereof.
- the gas stream may be a stream of oxidizing gas such as air, oxygen enriched air, or oxygen optionally enriched with water vapor.
- the division of the homogeneous, solidified metal alloy can also be carried out in the solid phase by abrasion or grinding.
- the metal alloy powder, or the metal powder may optionally be separated into several size fractions.
- the metal alloy powder, or the metal powder can be completely oxidized, that is, the oxidized powder comprises 100% by weight of oxide (s).
- the powder of metals or metal alloys can be oxidized only partially.
- the metal or metal alloy powder can be partially oxidized to a percentage of 50 to 99, 90% by weight, preferably
- the oxidized powder comprises from 50 to 99, 90% by weight of oxide (s), preferably from 55 to 80% or 85% by weight, more preferably from 60 to 70% by weight of oxide (s).
- the metal or metal alloy powder is partially oxidized to a percentage of 64% by weight.
- the total or partial oxidation of the particles of the metal powder or metal alloy of determined particle size can be carried out by bringing said particles into contact with an oxidizing gas from a temperature, for example of 400 ° C., and / or for a period of time sufficient to to obtain a desired percentage of metal or metal oxides in the powder, for example so that the oxidation is complete.
- the temperature of 900 ° C. for 1 minute makes it possible to completely oxidize a monolayer of tin particles to tin oxide.
- a temperature plateau is observed by keeping the particles at this temperature for a period of time sufficient for the oxidation to be complete.
- the oxidation rate of the particles is controlled, essentially conditioned by the temperature of the oxidation stage and not by its duration, as in the case of zinc. It was totally unexpected that in the case of tin or a tin - based mixture or alloy control of total oxidation was obtained by controlling essentially the temperature of the oxidation plateau and not its duration, such as this is the case for zinc and its alloys.
- the oxidizing gas may be chosen from oxygen-containing gases optionally enriched with water vapor and / or carbon dioxide such as air, oxygen enriched air, oxygen, air enriched with carbon dioxide and / or water vapor; mixtures of CO and CO 2 .
- the particles may be brought into contact with the oxidizing gas at a temperature greater than or equal to 400 ° C., for example from 400 ° to 95 ° C.
- the duration of this contacting is generally 6 hours to 1 second, preferably 4 hours to 2 seconds.
- the contacting may therefore be carried out for example for 4 hours at 400 ° C., or for 2 seconds at 900 ° C.
- it is intended to provide, to develop, a powder comprising finely divided, homogeneous oxides, with the most limited possible isotropic segregations, the surface state of which should facilitate subsequent densification.
- the shaping of the fully or partially oxidized homogeneous powder can be carried out by compacting it in the form of pellets for example by cold pressing.
- the sintering may be carried out at a temperature of 1100 to 135O 0 C for a period generally greater than or equal to 30 minutes, preferably from 30 minutes to 2 hours.
- FIG. 1 is a schematic vertical sectional view of an atomization apparatus for preparing a metal alloy powder of determined particle size, each of the particles is homogeneous.
- This embodiment of the process according to the invention implements, for the preparation of the powder subjected to sintering - which according to the invention is a powder that is only partially oxidized comprising one or more metals - an "ODAP" process adapted to an alloy particular based on Sn.
- tin is placed in a crucible, or any other container suitable for melting metals, tin as a base metal, that is to say as a metal whose oxide is the basic oxide of the ceramic to be prepared; and one or more other doping metals mentioned above and / or one or more salts of these doping metals, preferably in the proportions defined above.
- base metal oxide as used in the present description is generally used to indicate that this oxide is predominant in mass in the final ceramic, sintered, that is to say that this oxide generally represents 50%.
- this base metal oxide is a simple oxide.
- diopant is a term commonly used by those skilled in this field of the art.
- salt is as commonly used in mineral chemistry and includes chlorides, nitrates, etc., but also including oxides.
- the final ceramic may optionally include, in addition to the base metal oxide and the doping metal oxide, in particular, impurities and / or other additives.
- impurities is meant substances incidentally, unwanted, in the ceramic, and additives are substances added voluntarily in the ceramic to obtain a particular property or properties.
- the semiconductor ceramic consists of a base metal oxide and at least one doping metal oxide.
- the powder consists of one or more base metals in non-oxidized metal form, one or more oxides of doping metals, and optionally one or more doping metals in unoxidized metal form, in the case where additives and / or impurities are present in the final ceramic, then it is obvious that the powder also possibly comprises all or some of the additives and / or impurities present in the final ceramic.
- the tin and said doping metals and / or doping metal salts are then melted under a neutral or reducing atmosphere, for example hydrogen, while stirring the molten metals to obtain a mixture or alloy of metals (tin and doping metals) liquid, homogeneous.
- a neutral or reducing atmosphere for example hydrogen
- the salt or salts that may be present may decompose if they are nitrates, for example.
- the possible pollution caused by this decomposition is very small, because of the very low dopant content.
- This first and second steps are conventional steps that can easily be implemented by those skilled in the art, for example using the apparatus (oven) described in document FR-A-2 674 157 (FIG. 1) and in EP-A1-0 580 912 to the description of which we can refer.
- a metal alloy powder of determined particle size each of the particles of which is homogeneous, is prepared from said mixture or alloy of metals, homogeneous liquid.
- Said determined particle size can be obtained directly or after a possible granulometric classification operation, for example a sieving operation.
- This liquid, homogeneous metal alloy powder can be prepared directly by spraying, atomizing, without prior cooling, the liquid alloy prepared in the second step by a stream of gas or liquid.
- the liquid homogeneous metal mixture or alloy can be cooled first to solidify it and then to divide the solidified homogeneous metal alloy into a metal alloy powder of determined particle size.
- the cooling operation can be carried out by casting the liquid metal alloy in a mold under a neutral or reducing atmosphere and then cooling the ingot obtained in a neutral or reducing atmosphere.
- the alloy if it was made in a vacuum sealed silica ampoule containing the different metals, this bulb having then been heated in an oven and stirred regularly to obtain a homogeneous liquid mixture, can be finally cooled by a quenching for freezing the resulting alloy.
- the division of the solidified homogeneous metal alloy such as an ingot can be achieved by melting again this solid alloy (which is for example in the form of an ingot) to give a homogeneous liquid metal alloy which is sprayed by a stream of gas or liquid.
- the liquid used for the atomization may be water.
- the gas used by the atomization spray may be a reducing or neutral gas selected for example from hydrogen, nitrogen, argon and mixtures thereof.
- the gas used for the atomization, spraying can be an oxidizing gas such as air, optionally enriched with oxygen and / or water vapor, or oxygen, so that the fine particles of molten alloy are pulverized into fine particles which are at the same time partially oxidized and cooled.
- an oxidizing gas such as air, optionally enriched with oxygen and / or water vapor, or oxygen, so that the fine particles of molten alloy are pulverized into fine particles which are at the same time partially oxidized and cooled.
- a reducing or neutral gas is used, whereby fine particles or droplets of alloys are cooled and stored at a non-oxidized or very superficially oxidized metallic state.
- the alloy particles necessarily undergo partial oxidation prior to shaping and sintering.
- the spraying is carried out generally at a temperature of 400 to 1000 0 C while in the case where the gas used is a neutral gas or reducing the spraying is carried out generally at a temperature of 230 to 1000 0 C.
- the division, atomization, spraying of the alloy can be carried out with an apparatus such as that described in the documents FR-A-2 674 157 (FIG 2) and EP-AO 580 912 (FIG 2) to the description of which we can refer.
- the division, atomization, spraying in liquid phase can also be carried out by atomizing the mixture, alloy, liquid by a jet of gas for example with nitrogen gas using the apparatus described in FIG. comprises three parts: a part intended for the melting of the alloy (or of the metal in the case of the second embodiment of the invention: see below); an enclosure which is the actual atomizer is provided at its base with an atomizing nozzle; and a tube or rod for closing off the atomizing nozzle and for measuring the temperature at that nozzle.
- the entire apparatus is heated by means of electrical resistances and subjected to a neutral gas sweep such as argon (other than the atomizing gas) to protect the liquid from any early oxidation that may promote segregation. oxides.
- a neutral gas sweep such as argon (other than the atomizing gas) to protect the liquid from any early oxidation that may promote segregation. oxides.
- the alloy or metal (1) is melted in a container (2) heated via a heating resistor (3) and provided with thermocouple (4).
- This container is adapted in a nozzle (5) provided with a lapped connection (6) located in the side wall (8) of the atomizer (7), the latter has the shape of a substantially elongated vertical cylindrical chamber.
- the coupling (6) makes it possible to rotate the container (2) containing the alloy (or the metal) between two positions: a first "low” position (in solid lines) in which the heating and the fusion of the alloy (or metal) and a second "high” position (in broken lines) in which the molten alloy (or metal), liquid can be transferred into the enclosure of the atomizer.
- the molten alloy is maintained in fusion at the lower part of the atomizer enclosure (7) by electric heating resistors (9).
- a tube (10) which opens into the side wall of the atomizer chamber sends a stream of inert gas (11) such as argon into the chamber and prevents oxidation of the alloy or molten metal. .
- a flow orifice (12) for the liquid alloy (or metal) which is sealed by a rod or tube.
- thermocouple 14
- a thread of alloy or liquid metal flows through the orifice into a nozzle
- the droplets of alloy or liquid metal are then cooled, preferably cooled rapidly, ie quenched, to recover an alloy (or metal) powder.
- the division of the solidified homogeneous metal alloy (or metal) such as an ingot can also be carried out in the solid phase, for example by abrasion, grinding or machining. This spraying, solid phase atomization is generally carried out at the temperature of the liquid nitrogen.
- the powder may already have the desired particle size, otherwise it is subjected, for example, to a granulometric classification operation.
- alloy powder (or metal in the second embodiment) can then be separated into several size fractions by sieving or any other separation process.
- the totality of the powder or only a determined particle size cut is subjected to the next step of the process.
- This step is the essential step of the process of preparing the powder used in the invention in this embodiment and consists of a partial oxidation of the alloy powder obtained previously.
- partial oxidation it is meant that the final powder comprises a proportion of oxide (s) of less than 100% by weight, preferably the proportion of oxide (s) is from 50 to 99.9% by weight, more preferably it is 55 to 70% by weight.
- This partial oxidation is carried out generally by avoiding the coalescence of the particles: this can be obtained by adjusting the physical parameters such as temperature, pressure, speed, etc. or by virtue of the technology used: for example, can use a fluidized bed, pulverulent.
- This partial oxidation is generally carried out by bringing the alloy (or metal) powder into contact with an oxidizing gas from a temperature, for example 400 ° C., and for a period of time sufficient to obtain the desired percentage of oxide (s) in the powder.
- the oxidizing gas may be any oxidizing gas that is suitable for this purpose, but it is generally chosen from gases containing oxygen optionally enriched with water vapor and / or carbon dioxide, such as air or enriched air. oxygen, oxygen, air enriched with carbon dioxide and / or water vapor; mixtures of CO and CO 2 .
- the (or metal) with the oxidizing gas can be carried out at a temperature ranging from 60 to 1000 0 C but it is generally carried out at a high temperature, namely a temperature greater than or equal to 400 0 C, for example from 400 to 95O 0 C. This contacting is carried out for a time sufficient to obtain the desired percentage of oxide (s) in the powder.
- This time can be easily determined by those skilled in the art, for example by means of oxidation curves found in previous experiments, which give the exact amount of oxidized alloy as a function of temperature and time.
- the composite powder of oxide (s) and metals obtained is then, in known manner, shaped, for example compacted in the form of ceramic pellets, by cold pressing, for example by uniaxial cold pressing using a organic or inorganic binder such as water.
- the shaped powder, compacted, for example in the form of pellets, is then known sintered at high temperature generally at a temperature of 1100 to 135O 0 C for a duration greater than or equal to 30 minutes, preferably 30 minutes at 2 hours, for example 135O 0 C for one hour to densify it.
- the densified ceramics obtained at the end of the process according to this first embodiment can be used in the varistors by proceeding prior to their metallization.
- a second embodiment of the process for preparing the powder used in the process according to the invention will now be described in detail.
- This embodiment implements, for the preparation of the powder subjected to sintering, an "ODAP" type process which can be defined in particular as an “ODAP” process, applied to a base metal such as pure tin and not to a metal alloy such as tin and dopants.
- metal such as pure solid tin (or zinc) is provided, for example in the form of pieces or shot or ingots.
- a tin powder of a given particle size is prepared from the metal, for example pure solid tin.
- the metal powder for example tin of determined particle size, can be prepared in the liquid phase by melting the metal, for example solid tin, to give a liquid metal which is sprayed, atomized by a stream of neutral or reducing gas chosen, for example from nitrogen, argon and mixtures thereof or by a stream of oxidizing gas.
- a stream of neutral or reducing gas chosen, for example from nitrogen, argon and mixtures thereof or by a stream of oxidizing gas.
- the metal powder such as tin of determined particle size can be prepared in solid phase by abrasion or grinding under conditions already described for the first embodiment. Similarly, it is possible, as in the first embodiment, to separate the metal powder, for example the tin powder, into several granulometric fractions. All or only a specific particle size cut, for example the particle size cut comprising particles with a diameter of less than 40 ⁇ m, is subjected to the next step of the process, which consists of a partial oxidation of the metal powder, for example powder. of tin obtained previously.
- the metal powder for example tin
- the metal powder is partially oxidized at a percentage of from 50 to 99.90% by weight, preferably from 55 to 70% by weight, that is to say that the oxidized powder comprises from 50 to 99, 90% by weight, preferably from 55 to 70% by weight of oxide and the remainder of free metal, for example free Sn (or free Zn).
- the metal powder for example tin
- the metal powder is oxidized to a percentage of 64% by weight, that is to say that it comprises, for example, by weight 64% of metal oxide, for example SnO 2 and 36% of the unoxidized metal, for example tin.
- the partial oxidation of the metal powder for example of the tin (or zinc) powder of determined particle size is carried out by putting said powder in contact with an oxidizing gas at a temperature and for a time sufficient to obtain a desired percentage. (for example in the ranges defined above) of tin metal oxide.
- the gas used and the temperature conditions are similar to those described above for the first embodiment of the process for preparing the powder.
- the contacting is carried out for a time sufficient to obtain the desired percentage of oxide in the powder, this time can be easily determined by those skilled in the art for example by means of oxidation curves as described above. .
- one or more powdery dopant metal oxides are added to the base metal powder, for example partially oxidized tin.
- the dopant metal oxide (s) added to the partially oxidized tin powder may be selected from any suitable dopant metal oxide.
- Oxides are generally chosen from oxides of cobalt, chromium, manganese, niobium, tantalum, metal oxides of the family of lanthanides such as lanthanum oxide, and mixed oxides of said metals with each other.
- Oxides can be oxides of commerce or oxides prepared by any known method, or even by the "ODAP" process.
- the doping metal oxide (s) are added to the metal powder, for example to the partially oxidized tin powder, in a mass percentage such that it makes it possible to obtain a ceramic comprising, in addition to 100% by weight of metal oxide, for example tin oxide, the desired percentage of the doping metal oxides.
- the doping oxide or oxides may be added in a mass percentage such that they make it possible to obtain a ceramic comprising in addition to 100% by weight of base metal oxide, for example tin oxide: 0, 1 to 3% of cobalt oxide, and / or,
- niobium oxide 0.01 to 0.5% of niobium oxide, and / or,
- tantalum oxide 0.01% to 0.5%
- one or more transition metal oxides 0.01% to 0.5%
- This example illustrates a process according to the invention in which the powder to be shaped is prepared by a modified "ODAP" process in which a partial oxidation of a tin powder is carried out and in which the doping oxides are added to the partially oxidized powder, before sintering.
- a ceramic having the following mass composition is prepared:
- the "ODAP" process is carried out on an initial product which is pure solid tin. This is first atomised under nitrogen in order to obtain a metal powder of tin.
- the main parameters relating to the atomizing gas are a pressure of 3 bar, a flow rate of 45 L / min, and a temperature of 700 0 C.
- the atomization device described in FIG. 1 is used.
- the powder is sieved so as to retain only the particle size cutter of less than 40 ⁇ m.
- This powder is then partially oxidized to 64% by weight, that is to say, it contains 64% tin dioxide SnO 2 and 36% tin by weight.
- This partial oxidation is carried out by placing the tin powder in an oven under an atmosphere of air, achieving a rise in temperature at a rate of 3 ° C./minute up to 75 ° C. and observing a step of a duration. limited to 5 minutes at this temperature before quenching in the air.
- Oxide doping oxides (Co 3 O 4 , Nb 2 O 5 and Ta 2 O 5 ) in the form of powder are then added in desired amounts to the metal-ceramic powder.
- the electrical characteristics of the ceramics obtained after metallization are as follows: the coefficient of non-linearity OC is 53 (measured around 10 -3 A / cm 2 ), and the threshold field E s is 308 V / mm (measured for 10 ⁇ 3 A / cm 2 ) Example 2
- the shaped and then sintered powder is first prepared by an ODAP process.
- the conditions of shaping and sintering are exactly the same as those adopted in Example 1.
- the ODAP process makes it possible to introduce a determined quantity of base metal into the ceramic by simply controlling the oxidation rate of the tin. This is atomized tin in the laboratory, which is partially and completely oxidized by the "ODAP" process, its size is of the order of 40 microns.
- the doping oxides are commercial oxides which are added before shaping to partially or totally oxidized tin powder.
- the percentages of densification before and after sintering are recorded in the following Table 1: Table 1
- ZnO is, in this case, a dopant.
- Examples 1 and 2 show the effect of partial oxidation (unoxidized metal) on the densification rate after sintering.
- Example 1 indicates (see Table 1) that the densification after sintering increases from 75.2% to 87.8% when the percentage of Sn (unoxidized metal) in SnO 2 increases from 0% to 45%.
- a final test is carried out with ceramics containing amounts of oxide less than 50%. These materials have high densities before sintering (> 88%).
- the critical metal - ceramic ratio is apparently exceeded: beads resulting from melting, coalescence and diffusion of the metal to the outside appear on the surface of the ceramic.
- the ceramics obtained after sintering contain only oxides, tin introduced in metal form oxidizing during sintering.
- the undoped SnO 2 ceramic sintered at only 68.2%, has a high porosity. This decreases thanks to the doping by CoO,
- the best density (93.5% on average) relates to the composition SnO 2 -ZnO-Nb 2 -O 5 -COO with a quantity of dioxide of 64%.
- Nb 2 O 5 -Cr 2 O 3 gives satisfactory electrical properties.
- the average values of the densification percentage, the grain size of the associated ceramic, as well as the nonlinearity coefficient OC, the threshold field E s and the leakage current density Jf are reported in Table 2 below. below:
- the average electrical properties of these SnO 2 -CoO-Nb 2 O 5 -Cr 2 O 3 varistors are interesting despite low densification percentages.
- the values of the nonlinearity coefficient OC and of the threshold field E s lie respectively between 37.5 and 53 and between 277 and 340 V / mm.
- Example 3 a ceramic having the following composition is prepared: SnO 2 : 99.36%;
- Such a partially oxidized powder is different from a partially oxidized powder obtained by subjecting a powder of pure metal, for example a pure tin powder, to an oxidation treatment: as is the case in Example 1.
- a partially oxidized powder is then obtained, each of which comprises a metal core and a shell, a peripheral layer of oxide.
- the two powders defined above can each be defined as partially oxidized powders, but their nature is different. We can express this by saying that in the first case the powder is globally partially oxidized and that in the second case the powder is partially oxidized globally but also at the level of each particle.
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- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0550204A FR2881135B1 (fr) | 2005-01-24 | 2005-01-24 | Procede de preparation de ceramiques semi-conductrices constituees d'oxydes de metaux tel que l'etain en pariculier pour les varistances |
PCT/FR2006/050040 WO2006077355A1 (fr) | 2005-01-24 | 2006-01-23 | Procede de preparation de ceramiques semi-conductrices constituees d'oxydes de metaux tel que l'etain en particulier pour les varistances |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1841713A1 true EP1841713A1 (fr) | 2007-10-10 |
Family
ID=35058472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP06709425A Withdrawn EP1841713A1 (fr) | 2005-01-24 | 2006-01-23 | Procede de preparation de ceramiques semi-conductrices constituees d'oxydes de metaux tel que l'etain en particulier pour les varistances |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1841713A1 (fr) |
BR (1) | BRPI0607011A2 (fr) |
FR (1) | FR2881135B1 (fr) |
WO (1) | WO2006077355A1 (fr) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DD238965A1 (de) * | 1985-07-03 | 1986-09-10 | Hermsdorf Keramik Veb | Verfahren zum herstellen von schichten und formkoerpern und pulvergemisch zur durchfuehrung des verfahrens |
IL92397A0 (en) * | 1989-01-30 | 1990-07-26 | Lanxide Technology Co Ltd | Method of producing self-supporting aluminum titanate composites and products relating thereto |
JPH0412058A (ja) * | 1989-08-25 | 1992-01-16 | Tonen Corp | 安定化ジルコニア固体電解質及びその製法 |
FR2674157B1 (fr) * | 1991-03-19 | 1993-07-30 | Deshayes Rene | Procede de fabrication d'alliage de metaux pour la production d'une poudre homogene et produit obtenu par sa mise en óoeuvre. |
US5322642A (en) * | 1992-07-28 | 1994-06-21 | Ferraz | Method of manufacturing semiconductors from homogeneous metal oxide powder |
-
2005
- 2005-01-24 FR FR0550204A patent/FR2881135B1/fr not_active Expired - Fee Related
-
2006
- 2006-01-23 WO PCT/FR2006/050040 patent/WO2006077355A1/fr active Application Filing
- 2006-01-23 BR BRPI0607011-6A patent/BRPI0607011A2/pt not_active IP Right Cessation
- 2006-01-23 EP EP06709425A patent/EP1841713A1/fr not_active Withdrawn
Non-Patent Citations (1)
Title |
---|
See references of WO2006077355A1 * |
Also Published As
Publication number | Publication date |
---|---|
BRPI0607011A2 (pt) | 2009-12-01 |
FR2881135A1 (fr) | 2006-07-28 |
WO2006077355A1 (fr) | 2006-07-27 |
FR2881135B1 (fr) | 2008-01-18 |
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