EP1824945A4 - Selective removal chemistries for semiconductor applications, methods of production and uses thereof - Google Patents

Selective removal chemistries for semiconductor applications, methods of production and uses thereof

Info

Publication number
EP1824945A4
EP1824945A4 EP04811473A EP04811473A EP1824945A4 EP 1824945 A4 EP1824945 A4 EP 1824945A4 EP 04811473 A EP04811473 A EP 04811473A EP 04811473 A EP04811473 A EP 04811473A EP 1824945 A4 EP1824945 A4 EP 1824945A4
Authority
EP
European Patent Office
Prior art keywords
production
methods
selective removal
semiconductor applications
removal chemistries
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04811473A
Other languages
German (de)
French (fr)
Other versions
EP1824945A1 (en
Inventor
Deborah L Yellowaga
Ben Palmer
John S Starzynski
John A Mcfarland
Marie Lowe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of EP1824945A1 publication Critical patent/EP1824945A1/en
Publication of EP1824945A4 publication Critical patent/EP1824945A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/004—Surface-active compounds containing F
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Detergent Compositions (AREA)
EP04811473A 2004-11-19 2004-11-19 Selective removal chemistries for semiconductor applications, methods of production and uses thereof Withdrawn EP1824945A4 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2004/038761 WO2006054996A1 (en) 2004-11-19 2004-11-19 Selective removal chemistries for semiconductor applications, methods of production and uses thereof

Publications (2)

Publication Number Publication Date
EP1824945A1 EP1824945A1 (en) 2007-08-29
EP1824945A4 true EP1824945A4 (en) 2008-08-06

Family

ID=36407439

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04811473A Withdrawn EP1824945A4 (en) 2004-11-19 2004-11-19 Selective removal chemistries for semiconductor applications, methods of production and uses thereof

Country Status (4)

Country Link
EP (1) EP1824945A4 (en)
JP (1) JP2008521246A (en)
CN (1) CN101163776A (en)
WO (1) WO2006054996A1 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060255315A1 (en) * 2004-11-19 2006-11-16 Yellowaga Deborah L Selective removal chemistries for semiconductor applications, methods of production and uses thereof
TWI408212B (en) * 2005-06-07 2013-09-11 Advanced Tech Materials Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition
WO2007140193A1 (en) * 2006-05-25 2007-12-06 Honeywell International Inc. Selective tantalum carbide etchant, methods of production and uses thereof
ES2533349T3 (en) * 2006-09-19 2015-04-09 Poligrat Gmbh Stabilizer for acid polishing baths containing metal
CN102007196B (en) * 2008-03-07 2014-10-29 高级技术材料公司 Non-selective oxide etch wet clean composition and method of use
US8685272B2 (en) 2008-08-08 2014-04-01 Samsung Electronics Co., Ltd. Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device
JP2011016975A (en) * 2009-06-12 2011-01-27 Asahi Kasei Corp Etchant for copper oxide and etching method for copper oxide using the same
CN102471686B (en) * 2009-07-22 2014-08-27 东友Fine-Chem股份有限公司 Etchant composition for the formation of a metal line
KR101627392B1 (en) * 2009-10-02 2016-06-03 미츠비시 가스 가가쿠 가부시키가이샤 Processing liquid for suppressing pattern collapse of fine metal structure and method for producing fine metal structure using same
US20140370643A1 (en) * 2011-08-22 2014-12-18 1366 Technologies Inc Formulation for acidic wet chemical etching of silicon wafers
US9534306B2 (en) 2012-01-23 2017-01-03 Macdermid Acumen, Inc. Electrolytic generation of manganese (III) ions in strong sulfuric acid
US9752241B2 (en) 2012-01-23 2017-09-05 Macdermid Acumen, Inc. Electrolytic generation of manganese (III) ions in strong sulfuric acid using an improved anode
US10260000B2 (en) 2012-01-23 2019-04-16 Macdermid Acumen, Inc. Etching of plastic using acidic solutions containing trivalent manganese
US9102901B2 (en) 2012-12-20 2015-08-11 Rohm And Haas Electronic Materials Llc Methods and compositions for removal of metal hardmasks
PL2971260T3 (en) * 2013-03-12 2020-03-31 Macdermid Acumen, Inc. Electrolytic generation of manganese (iii) ions in strong sulfuric acid
CN106833962A (en) * 2016-12-26 2017-06-13 上海申和热磁电子有限公司 Cleaning agent and its preparation and application for removing conductor etching cavity ceramic coating part pollutant
CN110527347A (en) * 2018-05-23 2019-12-03 深圳市裕展精密科技有限公司 Strip agent and the strip method for using the strip agent
CN109111925A (en) * 2018-09-20 2019-01-01 绵阳致知高新科技有限责任公司 A kind of wet etching method of etchant and its tantalum nitride membrane
US20220010242A1 (en) * 2019-02-15 2022-01-13 Nissan Chemical Corporation Cleaning agent composition and cleaning method
WO2020179819A1 (en) * 2019-03-05 2020-09-10 日産化学株式会社 Cleaning agent composition and cleaning method
US12024436B2 (en) * 2021-04-27 2024-07-02 Battelle Memorial Institute Method to control the etching rate of materials
CN113265659A (en) * 2021-05-26 2021-08-17 绍兴德汇半导体材料有限公司 Etching method for bonding layer structure of titanium and titanium compound on ceramic substrate
CN114891509B (en) * 2021-12-14 2023-05-05 湖北兴福电子材料股份有限公司 High-selectivity buffer oxide etching solution

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1588843A (en) * 1976-12-17 1981-04-29 Ibm Etching composition
US6117796A (en) * 1998-08-13 2000-09-12 International Business Machines Corporation Removal of silicon oxide
US6159865A (en) * 1995-11-15 2000-12-12 Daikin Industries, Ltd. Wafer treating solution and method for preparing the same
WO2001029284A1 (en) * 1999-10-15 2001-04-26 Arch Specialty Chemicals, Inc. Novel composition for selective etching of oxides over metals
US6280651B1 (en) * 1998-12-16 2001-08-28 Advanced Technology Materials, Inc. Selective silicon oxide etchant formulation including fluoride salt, chelating agent, and glycol solvent
US20010050350A1 (en) * 1997-01-09 2001-12-13 Advanced Technology Materials Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US20030216269A1 (en) * 2002-05-15 2003-11-20 Deyoung James P. Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW467953B (en) * 1998-11-12 2001-12-11 Mitsubishi Gas Chemical Co New detergent and cleaning method of using it
US6248704B1 (en) * 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
US7129199B2 (en) * 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
US6623355B2 (en) * 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1588843A (en) * 1976-12-17 1981-04-29 Ibm Etching composition
US6159865A (en) * 1995-11-15 2000-12-12 Daikin Industries, Ltd. Wafer treating solution and method for preparing the same
US20010050350A1 (en) * 1997-01-09 2001-12-13 Advanced Technology Materials Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US20020043644A1 (en) * 1997-12-19 2002-04-18 Wojtczak William A. Selective silicon oxide etchant formulation including fluoride salt, chelating agent, and glycol solvent
US6117796A (en) * 1998-08-13 2000-09-12 International Business Machines Corporation Removal of silicon oxide
US6280651B1 (en) * 1998-12-16 2001-08-28 Advanced Technology Materials, Inc. Selective silicon oxide etchant formulation including fluoride salt, chelating agent, and glycol solvent
WO2001029284A1 (en) * 1999-10-15 2001-04-26 Arch Specialty Chemicals, Inc. Novel composition for selective etching of oxides over metals
US20030216269A1 (en) * 2002-05-15 2003-11-20 Deyoung James P. Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2006054996A1 *

Also Published As

Publication number Publication date
EP1824945A1 (en) 2007-08-29
JP2008521246A (en) 2008-06-19
CN101163776A (en) 2008-04-16
WO2006054996A1 (en) 2006-05-26

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Legal Events

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PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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Effective date: 20070619

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Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LU MC NL PL PT RO SE SI SK TR

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A4 Supplementary search report drawn up and despatched

Effective date: 20080704

RIC1 Information provided on ipc code assigned before grant

Ipc: C09K 13/08 20060101AFI20080630BHEP

17Q First examination report despatched

Effective date: 20090323

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Effective date: 20101221