EP1743047A1 - Plaque de support pour cibles de pulverisation cathodique - Google Patents

Plaque de support pour cibles de pulverisation cathodique

Info

Publication number
EP1743047A1
EP1743047A1 EP05731108A EP05731108A EP1743047A1 EP 1743047 A1 EP1743047 A1 EP 1743047A1 EP 05731108 A EP05731108 A EP 05731108A EP 05731108 A EP05731108 A EP 05731108A EP 1743047 A1 EP1743047 A1 EP 1743047A1
Authority
EP
European Patent Office
Prior art keywords
carrier plate
weight
refractory metal
group
composite material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05731108A
Other languages
German (de)
English (en)
Inventor
Roland Scholl
Bernd Meyer
Gerd Passing
Gerhard WÖTTING
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HC Starck GmbH
Original Assignee
HC Starck GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HC Starck GmbH filed Critical HC Starck GmbH
Publication of EP1743047A1 publication Critical patent/EP1743047A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00

Definitions

  • the invention relates to a carrier plate for sputteit targets, the carrier plate consisting of a composite material which contains at least one refractory metal and at least one further metallic component from the group Cu, Ag, Au, falsification to manufacture such a carrier plate and units which form the carrier plate and contain a SpuUeilarget
  • substances are characterized by inherent physical properties, for which it is often difficult to describe them theoretically, and which - as natural gnomes - cannot be "improved” even by technical means.
  • a substance often indicates one for a specific one technical application also desired one or several undesired properties.
  • the WAK is inversely proportional to the melting temperature (T m ) of the
  • the E-Modu! Pure metals also correlate with the melting temperature.
  • Metallic materials and components with high thermal conductivity can be manufactured using melt metallurgy.
  • melting temperatures of the metals to be processed are above approx. 2000 K.
  • Components made of metals with higher melting temperatures, such as W, Mo, Re or Ta, are therefore preferably manufactured using powder-melting processes. , This leads to high manufacturing costs (material price, technology costs, machinability).
  • powder metallurgy offers the possibility of being more complicated! ge rrmie to quickly produce rough parts from metallic materials of any composition. It is therefore basically possible, for example the metals and / or mixtures shown in Table 1. to be processed from these metals by powder metallurgy to the desired combinations of welcomers.
  • Corresponding materials can also be produced by a combination of powder metallurgical and melt metallurgical process steps, for example by so-called infiltration methods.
  • the desired functional properties of the material formed for example the thermal conductivity, are caused by metallurgical effects, for example reactions as a result of the formation of intermetallic phases
  • a disadvantage is the complex production of construction parts according to the infill, which usually involves two thermal processes at high temperature (sintering of a skeletal body T:> 1600 ° C., infiltrating the porous body with Cu, T:>
  • Components of the application area (1) are mainly used in the area of microelectronics, components of the application area (2) in the area of power electronics or power electronics, where high-performance areas have to be dissipated by a functional element.
  • Components of the application area (2) are used, for example, as electronic power switches or as a carrier plate for sputtering tarels.
  • Carrier plates for sputtering targets have to perform two functions. On the one hand, the actual sputtering target must be able to be securely attached to the carrier plate, and on the other hand, the heat that arises during the sputtering process must be removed from the sputtering target. As sputler tarels are a variety of different
  • Plates are suitable for sputler targels with significantly higher WAK (15 to 20 x 10 " '7K)
  • Units from the carrier plate and the actual sputtering target must be designed in such a way that the connection between the carrier plate and the sputtering target remains constant even under the extreme thermal loads during the sputtering process, and in particular there is no detachment or breakage of the sputler target.
  • EP 1 331 283 A1 discloses a unit made of a carrier plate made of a Cu-Cr or a Cu-Zn alloy and a tantalum or tungsten target, in which the two units have a special intermediate layer made of aluminum or a Aluminum alloy are interconnected.
  • the intermediate layer must have a minimum thickness of 0.5 mm and allows the connection of materials whose thermal stress
  • WO 92/17622 AI describes corresponding units made of support plates and target material, in which the 'coefficient of thermal expansion of the support plate is set by a layered structure thereof.
  • the carrier plate In addition to a base body made of copper, the carrier plate has a layer of molybdenum or a molybdenum alloy applied to the base body. The target is in turn attached to this layer.
  • a carrier plate is suitable for target materials which have a coefficient of thermal expansion of approximately 10 ⁇ 10 " ′′ / K, for example silicon targets. Such a carrier plate is not suitable for other target materials.
  • the production of the carrier plates is very complex since the upper layer must be firmly connected to the base body.
  • ⁇ are used in which the pressure of an explosion wave is exploited.
  • the disadvantage is that the unit described now has an additional weak point, namely the connection of the base body and the upper layer, where the units can come apart when subjected to thermal stress.
  • the object of the present invention is therefore to provide carrier plates for sputtering targets which are simple to produce, the
  • Coefficient of thermal expansion can be set over a wide range.
  • the carrier plates should also have high thermal conductivity in order to allow efficient dissipation of the heat occurring during the sputtering process.
  • the coefficient of thermal expansion can be set very easily over a wide range if the carrier plates consist of a composite material which contains components with different coefficients of thermal expansion.
  • the invention therefore relates to a carrier plate for sputtering targets, the
  • Carrier plate consists of a composite material which contains 5 to 99% by weight of at least one refractory metal and 95 to 1% by weight of at least one further metallic component from the group Cu, Ag, Au.
  • the other metallic component from the group Cu, Ag, Au is characterized in particular by a high thermal conductivity (320 to 425 W / m * K.) And a high CTE (approx. 14 " to 17 x 10 " * / K).
  • the carrier plates according to the invention are distinguished in particular by the fact that the coefficient of thermal expansion is very simple over a wide range by choosing the
  • Components of the composite material and the respective proportions can be set specifically.
  • the production of the girders also affects the WAK in an irregular way.
  • the carrier plates also have a high thermal conductivity, so that the heat generated during the spooling process can be reliably dissipated
  • the carrier plate is made of a composite material that combines the advantages of selected refractory metals (low CTE, not alloyable or immiscible with selected metals with high thermal conductivity) and metals with high thermal conductivity.
  • the selection of a suitable or desirable one is made Material combination taking into account material, manufacturing and cost criteria.
  • Table 2 "Material selection for the best possible adaptation of the carrier plate to the target material” shows coefficients of thermal expansion of selected materials for sputtering targets for the temperature range from room temperature (20 ° C) to 300 ° C.
  • Table 2 in columns W-Cu, Mo-Cu, Re-Cu and Ta-Cu contains information on the copper content that the corresponding composite material must contain in order to have the desired thermal expansion coefficient of the target material. According to this, it is possible, for example, to use a carrier plate for a MoSi 2 sputtering target (CTE: 8.2 x 10 "6 / K) made of a W-Cu composite material with 40% by weight C, made of a Mo-Cu composite material 50 wt .-% Cu, from a Re-Cu composite material with 21 wt .-% Cu or a Ta-Cu composite material with 18 wt .-% Cu.
  • CTE MoSi 2 sputtering target
  • Table 2 Material selection for the best possible adaptation of the carrier plate to the tarael material
  • the carrier plate according to the invention preferably consists of a composite material which contains 10 to 95% by weight of at least one refractory metal and 90 to 5% by weight of at least one further metallic component from the group Cu, Ag, Au, particularly preferably of a composite material, the 15th to 95th at least one refractory metal and 85 to 5 parts by weight 0 /. contains at least one further metallic component from the group Cu, Ag, Au.
  • the refractory metal is preferably W and / or Mo, in particular preferably W or Mo.
  • Cu or a mixture of Cu and Ag and / or gold is preferably used as a further metallic component.
  • the carrier plate particularly preferably consists of a composite material that has 15 to 95
  • Wt .-% Mo or W and 85 to 5 Gcw .-% Cu contains ..
  • proportions of refractory metal and other metallic components with the exception of unavoidable impurities, very particularly preferably add up to 100% by weight.
  • Control composite material infiltration, processing of powder mixtures. With higher contents of further metallic components (in Fig. 2 Cu) one can expect a "disproportionate" influence of the Cu on the CTE (Fig. 2, area III), area III If the volume volume of the Cu is high, a closed Cu network is to be expected, which also affects the CTE disproportionately with regard to the resulting CTE (as in area II). Area IV stands for high copper content. where the properties (WLF. WAK) are expected to be proportional to the Cu content.
  • the range of the required Cu content (% by weight) in a Mo-Cu composite material in which the desired CTE is obtained can accordingly be determined with the aid of FIG. 2.
  • the final CTE is ultimately influenced by the manufacturing conditions, including the choice of raw materials. Appropriate preliminary tests to select the material composition and to set the decay parameters enable the necessary parameters to be determined which allow the production of a composite material with a desired CTE.
  • the ratio of thermal conductivity to. linear thermal expansion coefficient can be used.
  • WLF / WAK values (> approx. 23 (W / m * K) / (10 ' ° / K)) describe the ability of the material to transport large amounts of heat with a small heat-related change in length (in the event of temperature differences occurring) of the component ,
  • FIG. 3 shows the WLF / WAK ratio as a function of the WLF for various metals and the composite materials Mo-Cu, W-Cu, Ta-Cu and Re-Cu. As can be seen in FIG. 3, particularly high WLF / WAK ratios can be achieved with the composite materials Mo-Cu and W-Cu.
  • carrier plates according to the invention in the temperature range of 20 to 300 ° C, a ratio of thermal conductivity to thermal expansion coefficient of> 23.8 (W / m * K) / (l 0- f VK), ie of> 23.8 x 10 + (i W / m on.
  • the linear thermal expansion coefficient (CTE) is a parameter of a solid that is determined in accordance with ASTM E228.
  • the unit of measurement for the CTE of solids is usually 10 "f 7K.
  • FIG. 4 shows the thermal conductivity wedge (WLF) of different metals in comparison to the thermal conductivity of the composite materials W-Cu and Mo-Cu with different ones
  • FIG. 4 shows, for example, that the Mo-Cu composite material modes 10/90, ie. a composite material which contains 10% by weight Mo and 90% Cu, has a WLF of almost 350 W / m * K.
  • the ASTM EI225 method is suitable for determining the thermal conductivity (WLF) up to 250 W / m * IC.
  • WLF thermal conductivity
  • a cylindrical measurement sample representative of the material diameter: 200 mm, length: 40 mm
  • Two holes are made radially in this sample (Diameter: 1 mm, length; 100 mm), in one
  • Two reference samples of the same type are made of solid ultrapure copper (99.99%) with certified WLF, e.g. 400 W / m * IC manufactured.
  • the actual determination of the WLF of the material sample to be assessed takes place as a relative measurement between the two known Cu-P above and the unknown sample. For this, the material sample is made between the two reference samples
  • a heating source is attached to the underside of the arrangement and a cooling surface is placed on the top in good thermal contact with the reference reference samples.
  • the arrangement generated in this way consisting of a heating source, 1st reference sample (R1), measurement sample (M), 2nd reference sample (R2) and the cooled top, is placed in a chamber with argon (99.999%).
  • Previously, thin, previously calibrated Ni-CrNi thermocouples (leg diameter: 0.2 mm) were inserted into the two holes in each disk and connected to a temperature measuring device. Now the arrangement is heated up until a constant heat flow from the heated to the cooled side is established.
  • temperatures are determined for this condition: temperature of the first reference sample at the lower measuring point (T RIU ), temperature of the first reference sample at the upper measuring point (T R] o ), temperature of the measuring sample at the lower measuring point (T Mu ), temperature of the measuring sample on upper measuring point (T MD ), temperature of the second reference probe at the lower measuring point (Tm ,,) and temperature of the second reference sample at the upper measuring point (T R2U ).
  • T R RI0 - T RIU
  • dT T Mo - T M
  • dTju Tru_ - T JU ".
  • the distances between the measuring points in each disc are exactly dx - 20 mm.
  • Thermal conductivity ( ⁇ ), heat sroni (I v ), sample area (A) and temperature gradient in the sample (dT / dx) are linked with each other according to the following formula:
  • the WLF ( ⁇ ) determined in this way corresponds to the WLF for the middle one
  • W / m * K is generally used as the unit of measurement for thermal conductivity.
  • the ratio WLF / WAK used in Fig. 3 is determined by simply dividing the determined material parameters WLF and WAK.
  • the geometry of the carrier plates according to the invention can vary within wide limits and is essentially predetermined by the device into which the carrier plate is to be used for the sputtering process.
  • the carrier cover can for example be round, oval, rectangular, square, but also irregularly shaped.
  • the thickness is to be selected so that the carrier plate has sufficient stability when the sputtering target is being applied and during the sputtering process
  • the carrier plate preferably has on the rear side, ie on the side on which the sputter coating is not applied. Channels on. through the one during the sputtering process Coolant can flow. In this way, heat can be dissipated very efficiently from the sputtering target and the carrier plate.
  • the invention further relates to a method for producing the carrier plate according to the invention, a composite powder containing 5 to 99% by weight of at least one refractory metal from the group Mo, W, Re, Ta and 95 to 1% by weight of at least one further metallic component from the group Cu, Ag, Au at a pressure of 50 - 1000 MPa (500 - 10000 bar) pressed axially or isoslatically and then sintered wild.
  • Suitable sintering processes are vacuum sintering (0 - 0.1 MPa (0 - 1 bar)), pressureless sintering (0.1 - 0.2 MPa (1 - 2 bar)), gas pressure sintering (0.2 - 10 MPa (2 - 100 bar)), H1P (gas pressure liners at 10 -400 MPa (100 - 4000 bar)) and hot presses.
  • the sintering processes can be combined to form multi-stage sintering processes, e.g. B Phase 1: vacuum sintering, phase 2: H1P
  • a molybdenum-copper or tungsten-copper composite powder is preferably used. Particularly preferably a molybdenum-copper or tungsten-copper composite powder which has a metal primary size predominantly ⁇ 2 ⁇ m and an oxygen content ⁇ 0.8% by weight Such composite powders and their production are known from WO 02/16063 A2.
  • the process parameters to be met during the manufacture of the carrier plates according to the invention depend on the properties of the composite material being driven and in particular on the desired proportion of the refractory sleeve and the further metallic components, e.g. Cu, in the composite material.
  • the sintering is carried out in the case of Heislellung a carrier sheet from a Mo-Cu Vei bundtechnikstorf preferably under reducing conditions (z. B. Wasserstoli) at a temperature of 1 100 to 1300 ° C, and particularly preferably from 1 150 to I 250 ° C.
  • the sintering time is preferably 1 to 10 h, particularly preferably 2 to 5 h
  • a carrier plate made of a Mo-Cu composite material with a copper content of 30% by weight can be obtained by cold isostatic pressing (C1P) of a Mo-Cu composite powder in a rubber mold at 200 MPa (12000 bar), green processing (grinding, turning) ) to the final dimensions plus known sintering shrinkage, heating at 5 IC / min (hydrogen-containing atmosphere) to 1050 ° C, holding time at 1050 ° C of 30 min,
  • the exact physical characteristics depend on the properties of the powder used, the processing as well as the thermal treatment during sintering or heat treatment.
  • the desired WAK can be set by variations within the above-mentioned parameter window, the WLF results in the range described,
  • W-Cu carrier plates in particular those with 1 to approximately 30% by weight of Cu, are produced in an analogous manner using appropriate composite powders.
  • the W-Cu system requires a higher sintering temperature.
  • sintering temperatures of up to approx. 1450 ° C and sintering times of approx. 4 h are required.
  • the sintering is therefore preferably carried out under reducing conditions (e.g. hydrogen) at a temperature of 1100 to 1500 ° C., and particularly preferably from 1200 to 1450 ° C.
  • the sintering time is preferably 0.5 to 10 h, particularly preferably 1 to 5 h.
  • Carrier plates made of materials with high proportions of refractory metals (> 60% by weight) and the lowest possible CTE (5 to 6 ⁇ 10 ⁇ / K) are preferably produced by infiltration of a skeleton from a refractory metal with the desired further metallic component, preferably copper.
  • the object of the invention is therefore also a process for the production of carrier plates according to the invention with a proportion of refractory metal of> 60% by weight, with a sintered body of a refractory metal from the group Mo. W. Re, Ta is produced and this is then infiltrated with 1 to 40 wt .-% of a further metallic component from the group Cu, Ag, Au.
  • a refractory metal powder is first pressed into a plate and the pressed body is then sintered under hydrogen at a temperature of at least 1700 ° C.
  • This sintered body is then infiltrated with a melt of the further metallic component, preferably one, in a second step Copper melt, clearly above the melting point of the other metallic component, for example at 1200 ° C.
  • the open pores of the refractory metal skeleton are completely filled with the further metallic component, the resulting body changes its outer dimensions only slightly, so that - assuming completely open porosity of the skeleton - the properties of the composite material with regard to the content of further metallic components and so that WLF and WAK can roughly determine in advance.
  • Starting powder can be determined by simple preliminary tests.
  • the physical properties, for example WAK, WLF, density, modulus of elasticity of the composite material result from the real structure of the composite material and the primary physical properties of the structural components (refractory metal, further metallic component, pores).
  • Carrier panels made of composite materials, where due to a desired high CTE of> approx. 11 x 10 '6 / IC the content of further metallic component, for example the content of
  • Cu which must be very high (for example 70 to 90% by weight), can be produced very easily by pressing and shaping suitable starting powders.
  • pressing and pressing through a forming step such as forging, rolling and the like. ., compacted to> 95% of the theoretical density (TD), a support plate with the desired properties is obtained.
  • TD theoretical density
  • the invention further relates to units which contain a sputtering target and a carrier plate according to the invention.
  • Preferred target material! ien are those that have a CTE in the range of 5 to 16 x 10 "6 / K and that, due to their mechanical strength properties (fracture behavior, brittleness), also require a carrier plate that prevents the development of mechanical stresses during attachment (bonding ) and / or largely prevented during use in a sputtering system
  • CTE in the range of 5 to 16 x 10 "6 / K
  • a few examples are given in Table 2. However, the selection could be expanded almost arbitrarily, since the variety of materials for
  • FIG. 6 shows a unit according to the invention with a carrier plate (1) according to the invention, on which the sputtering target (2) is applied.
  • the unit is in turn on a mounting plate (3) which e.g. can consist of copper, arranged
  • the channels recognizable on the underside of the carrier plate serve to supply and remove a cooling medium during the sputtering process.
  • the carrier plate may have one or more grooves for receiving sealing rings or tapes, e.g. B. to seal the carrier plate (2) to the mounting plate (3) (not shown).
  • a low-melting solder on tin, indium To fix a sputter target on the carrier plate, a low-melting solder on tin, indium,
  • a carrier plate according to the invention was produced in a device as shown schematically in FIG. 5.
  • a composite powder mixture (1) which consisted of 80% by weight of W and 20% by weight of Cu, was placed in a rubber mold (2 ) filled with shaking
  • a profiled metal body (3) with a surface finish.
  • the rubber mold was held by a support cage (4)
  • the surface of the powder container is closed with a second rubber mold, which serves as a lid (5). This winds around the support cage (4) and the rubber mold (2) to form a tightly closed space for the powder to be compressed.
  • a securing tape (6) was attached so that a seal of the filled rubber mold, consisting of Rubber mold (1) and lid (5) was reached, then the rubber mold was evacuated by inserting a cannula (7) which was connected to a vacuum pump (8). After a period of 10 minutes, the cannula (7) was pulled out of the rubber mold (5). The puncture hole of the cannula closes automatically.
  • the rubber mold prepared in this way was introduced into a hydrostatic press (CIP), not shown, by applying a pressure of 4000 bar compression of the powder mixture up to a press density of 9.3 g cm 3 .
  • the non-deformable profiled metal body (3) with a surface finish acts as an embossing tool.
  • This sintered body had one
  • a ceramic WSi 2 target was applied to the W-Cu carrier plate produced in this way.
  • the selected ceramic WSi 2 target has a linear coefficient of thermal expansion of 6 to 6.5 x 10 " ⁇ / K in the temperature range from RT to 300 ° C, after pretreatment of the surfaces to be soldered in a soldering oven under a suitable atmosphere, an open-ended one could Connection to the carrier plate with high adhesion and thus high heat dissipation capacity are produced.
  • an infiltration material Mo-Cu (53% Mo / 47% Cu) would be present, which has a CTE of approx. 8 x 10 "6 / IC.
  • a precise setting of the CTE is typically done by experiments and measurement of the actual coefficient of expansion Due to the fact that the Mo skeleton does not exactly describe the WAK, experiments are necessary to reliably set a desired WAK.
  • the functional surfaces are finished by turning or grinding.
  • a suitable powder mixture can also be subjected to a Umlbrm process to produce a carrier plinth according to the invention.
  • a Umlbrm process to produce a carrier plinth according to the invention.
  • Functional surfaces are made by turning or grinding.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Powder Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne une plaque de support pour des cibles de pulvérisation cathodique formées d'un matériau composite comprenant entre 5 et 99 % en poids d'au moins un métal réfractaire issu de groupe rassemblant Mo, W, Re, et Ta, et entre 95 et 1 % en poids d'au moins un autre composant métallique issu du groupe rassemblant Cu, Ag, et Au. Cette invention se rapporte en outre à un procédé de production de cette plaque de support, et à une unité comprenant la plaque de support et une cible de pulvérisation cathodique.
EP05731108A 2004-04-23 2005-04-09 Plaque de support pour cibles de pulverisation cathodique Withdrawn EP1743047A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004020404A DE102004020404B4 (de) 2004-04-23 2004-04-23 Trägerplatte für Sputtertargets, Verfahren zu ihrer Herstellung und Einheit aus Trägerplatte und Sputtertarget
PCT/EP2005/003757 WO2005106068A1 (fr) 2004-04-23 2005-04-09 Plaque de support pour cibles de pulverisation cathodique

Publications (1)

Publication Number Publication Date
EP1743047A1 true EP1743047A1 (fr) 2007-01-17

Family

ID=34964057

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05731108A Withdrawn EP1743047A1 (fr) 2004-04-23 2005-04-09 Plaque de support pour cibles de pulverisation cathodique

Country Status (5)

Country Link
US (1) US20070205102A1 (fr)
EP (1) EP1743047A1 (fr)
DE (1) DE102004020404B4 (fr)
TW (1) TW200604362A (fr)
WO (1) WO2005106068A1 (fr)

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Publication number Priority date Publication date Assignee Title
EP1942202A3 (fr) * 2007-01-08 2010-09-29 Heraeus, Inc. Matériaux de consolidation en poudre à base de Re, à haute densité, à faible oxygène, à utiliser en tant que sources de dépôt, et leurs procédés de fabrication
US9056354B2 (en) * 2011-08-30 2015-06-16 Siemens Aktiengesellschaft Material system of co-sintered metal and ceramic layers
US8999226B2 (en) 2011-08-30 2015-04-07 Siemens Energy, Inc. Method of forming a thermal barrier coating system with engineered surface roughness
US9186866B2 (en) * 2012-01-10 2015-11-17 Siemens Aktiengesellschaft Powder-based material system with stable porosity
CN104125870A (zh) 2012-02-14 2014-10-29 东曹Smd有限公司 低偏转溅射靶组件及其制造方法
CN104141060B (zh) * 2014-07-31 2016-04-20 天津大学 一种互不固溶金属钽-银基体致密的块状复合材料的制备
AT15050U1 (de) * 2015-12-18 2016-11-15 Plansee Composite Mat Gmbh Beschichtungsquelle mit Strukturierung

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JPS5921032A (ja) * 1982-07-26 1984-02-02 Sumitomo Electric Ind Ltd 半導体装置用基板
JPS6267168A (ja) * 1985-09-19 1987-03-26 Toshiba Corp タ−ゲツト部品
WO1992017622A1 (fr) * 1991-04-08 1992-10-15 Tosoh Smd, Inc. Ensemble a cible de pulverisation cathodique et plaque de support thermiquement compatibles
US6521173B2 (en) * 1999-08-19 2003-02-18 H.C. Starck, Inc. Low oxygen refractory metal powder for powder metallurgy
DE10041194A1 (de) * 2000-08-23 2002-03-07 Starck H C Gmbh Verfahren zur Herstellung von Verbundbauteilen durch Pulver-Spritzgießen und dazu geeignete Verbundpulver
JP3905301B2 (ja) * 2000-10-31 2007-04-18 日鉱金属株式会社 タンタル又はタングステンターゲット−銅合金製バッキングプレート組立体及びその製造方法

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Title
See references of WO2005106068A1 *

Also Published As

Publication number Publication date
US20070205102A1 (en) 2007-09-06
WO2005106068A1 (fr) 2005-11-10
DE102004020404B4 (de) 2007-06-06
DE102004020404A1 (de) 2005-11-17
TW200604362A (en) 2006-02-01

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