EP1688964A3 - Electrostatic deflection system for corpuscular radiation - Google Patents
Electrostatic deflection system for corpuscular radiation Download PDFInfo
- Publication number
- EP1688964A3 EP1688964A3 EP06002118A EP06002118A EP1688964A3 EP 1688964 A3 EP1688964 A3 EP 1688964A3 EP 06002118 A EP06002118 A EP 06002118A EP 06002118 A EP06002118 A EP 06002118A EP 1688964 A3 EP1688964 A3 EP 1688964A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- deflection system
- electrostatic deflection
- symmetrical arrangement
- corpuscular radiation
- axially symmetrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005855 radiation Effects 0.000 title 1
- 238000001459 lithography Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/08—Deviation, concentration or focusing of the beam by electric or magnetic means
- G21K1/087—Deviation, concentration or focusing of the beam by electric or magnetic means by electrical means
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Micromachines (AREA)
Abstract
Die Erfindung betrifft elektrostatische Ablenksysteme für Korpuskularstrahlen, die insbesondere für mikro- und nanostrukturierte Anwendungen in Lithographieanlagen oder Messgeräten einsetzbar sind. Gemäß der gestellten Aufgabe sollen die einzelnen Elektroden eines solchen Ablenksystems dauerhaft eine sehr genaue axialsymmetrische Anordnung zueinander aufweisen und beibehalten. Bei dem erfindungsgemäßen elektrostatischen Ablenksystem sind stabförmige Elektroden in axialsymmetrischer Anordnung in einem innen hohlen Träger gehalten, durch den ein Korpuskularstrahl gerichtet werden kann. Der Träger ist dabei aus mindestens zwei und maximal vier miteinander verbindbaren Trägerelementen gebildet. The invention relates to electrostatic deflection systems for corpuscular beams, which can be used in particular for microstructured and nanostructured applications in lithography systems or measuring devices. According to the stated object, the individual electrodes of such a deflection system should permanently have and maintain a very precise, axially symmetrical arrangement with respect to each other. In the electrostatic deflection system according to the invention rod-shaped electrodes are held in an axially symmetrical arrangement in an internally hollow support, through which a particle beam can be directed. The carrier is formed from at least two and a maximum of four interconnectable carrier elements.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005005801A DE102005005801B4 (en) | 2005-02-04 | 2005-02-04 | Electrostatic deflection system for corpuscular radiation |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1688964A2 EP1688964A2 (en) | 2006-08-09 |
EP1688964A3 true EP1688964A3 (en) | 2008-08-13 |
Family
ID=36580030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP06002118A Withdrawn EP1688964A3 (en) | 2005-02-04 | 2006-02-02 | Electrostatic deflection system for corpuscular radiation |
Country Status (4)
Country | Link |
---|---|
US (1) | US7491946B2 (en) |
EP (1) | EP1688964A3 (en) |
JP (1) | JP2006216558A (en) |
DE (1) | DE102005005801B4 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7741610B2 (en) * | 2007-11-01 | 2010-06-22 | Oy Ajat Ltd. | CdTe/CdZnTe radiation imaging detector and high/biasing voltage means |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3497744A (en) * | 1966-08-11 | 1970-02-24 | Philips Corp | Cathode-ray tube using a quadrupolar electrostatic lens to correct orthogonality errors |
JPS57206172A (en) * | 1981-06-15 | 1982-12-17 | Nippon Telegr & Teleph Corp <Ntt> | Electrostatic deflecting device for charged particle beam |
DE3138898A1 (en) * | 1981-09-30 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Electrostatic deflection system |
JPS59180943A (en) * | 1983-03-30 | 1984-10-15 | Hitachi Ltd | Electrostatic deflector for charged particle beam |
JPH02247966A (en) * | 1989-03-20 | 1990-10-03 | Fujitsu Ltd | Electrostatic deflection apparatus |
JPH05129193A (en) * | 1991-11-01 | 1993-05-25 | Fujitsu Ltd | Charged beam exposure device |
US5929452A (en) * | 1997-03-18 | 1999-07-27 | Kabushiki Kaisha Toshiba | Electrostatic deflecting electrode unit for use in charged beam lithography apparatus and method of manufacture the same |
EP0999572A2 (en) * | 1998-11-02 | 2000-05-10 | Advantest Corporation | Electrostatic deflector for electron beam exposure apparatus |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2882412B2 (en) * | 1989-01-20 | 1999-04-12 | 富士通株式会社 | Electron beam exposure equipment |
JP2900283B2 (en) * | 1990-08-28 | 1999-06-02 | 千代田化工建設株式会社 | Control method of exhaust gas ventilator of flue gas desulfurization unit |
JPH086317Y2 (en) * | 1991-04-11 | 1996-02-21 | 東芝機械株式会社 | Multi-pole opposed electrostatic deflector |
JPH04328236A (en) * | 1991-04-26 | 1992-11-17 | Fujitsu Ltd | Electron beam exposure device |
JPH09139184A (en) * | 1995-11-15 | 1997-05-27 | Nikon Corp | Manufacture of electrostatic deflection unit |
JPH09293472A (en) * | 1996-04-26 | 1997-11-11 | Fujitsu Ltd | Charged particle beam exposure device, its exposure method, and its manufacture |
FR2778180B3 (en) * | 1998-04-29 | 2000-05-19 | Saint Gobain Vitrage | TAPERED FIBERGLASS AND PROCESS FOR PRODUCING THE SAME |
JP2000011937A (en) * | 1998-06-26 | 2000-01-14 | Advantest Corp | Electrostatic deflector of electron beam exposure device |
JP2000138036A (en) * | 1998-11-02 | 2000-05-16 | Advantest Corp | Electrostatic deflecting system for electron beam irradiating device |
DE19907858C1 (en) * | 1999-02-24 | 2000-10-05 | Leica Microsys Lithography Ltd | Device for the electrostatic deflection of a corpuscular beam |
-
2005
- 2005-02-04 DE DE102005005801A patent/DE102005005801B4/en not_active Expired - Fee Related
-
2006
- 2006-02-02 EP EP06002118A patent/EP1688964A3/en not_active Withdrawn
- 2006-02-03 JP JP2006027127A patent/JP2006216558A/en active Pending
- 2006-02-03 US US11/346,666 patent/US7491946B2/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3497744A (en) * | 1966-08-11 | 1970-02-24 | Philips Corp | Cathode-ray tube using a quadrupolar electrostatic lens to correct orthogonality errors |
JPS57206172A (en) * | 1981-06-15 | 1982-12-17 | Nippon Telegr & Teleph Corp <Ntt> | Electrostatic deflecting device for charged particle beam |
DE3138898A1 (en) * | 1981-09-30 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Electrostatic deflection system |
JPS59180943A (en) * | 1983-03-30 | 1984-10-15 | Hitachi Ltd | Electrostatic deflector for charged particle beam |
JPH02247966A (en) * | 1989-03-20 | 1990-10-03 | Fujitsu Ltd | Electrostatic deflection apparatus |
JPH05129193A (en) * | 1991-11-01 | 1993-05-25 | Fujitsu Ltd | Charged beam exposure device |
US5929452A (en) * | 1997-03-18 | 1999-07-27 | Kabushiki Kaisha Toshiba | Electrostatic deflecting electrode unit for use in charged beam lithography apparatus and method of manufacture the same |
EP0999572A2 (en) * | 1998-11-02 | 2000-05-10 | Advantest Corporation | Electrostatic deflector for electron beam exposure apparatus |
Also Published As
Publication number | Publication date |
---|---|
DE102005005801A1 (en) | 2006-08-17 |
DE102005005801B4 (en) | 2007-08-09 |
EP1688964A2 (en) | 2006-08-09 |
US7491946B2 (en) | 2009-02-17 |
JP2006216558A (en) | 2006-08-17 |
US20060192133A1 (en) | 2006-08-31 |
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Legal Events
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
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17P | Request for examination filed |
Effective date: 20090114 |
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17Q | First examination report despatched |
Effective date: 20090302 |
|
AKX | Designation fees paid |
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GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: VISTEC ELECTRON BEAM GMBH |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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18D | Application deemed to be withdrawn |
Effective date: 20091229 |