EP1676353A1 - Field force machine - Google Patents

Abstract

The invention relates to a field force machine (FKM) consisting of a plurality of functional units having different functional mechanisms and ranges of applications. Said functional units include a field force generator (FKG) consisting of field batteries (FB), e.g. two permanent magnets (PM) in an antiparallel position, and a field modulator (FM). Said field force generator uses the field modulator to produce mechanical work in the cycle of the machine, said modulator controlling the field of the field batteries, between the state of equilibrium and the state of non-equilibrium. According to the invention, the field force generator (FKG) refers to the basic principle of a magnetic capacitor and the magnetic capacitance control thereof. As, with field force generators, the energy is permanently generated in an emission-free manner from the field batteries, controlled by the very small quantity of energy of the field force modulator, analogous to the control of an electronic transistor, said field force machine system can universally change the energy infrastructure in a sustained manner.

Description

 FIELD ENGINE Description of the Invention

Ä. Technical field to which the invention relates

The invention of the field force machine (FKM) relates to potential fields and swirl fields or dipole fields, in particular to magnetic, electrical, thermal and gravitational fields and contains five groups of inventions which are interconnected so that they implement a general inventive idea.

1. Field force generators (FKG)

2. Field semiconductor modulators

3. Field force motors (FKE)

4. Conrod length variators (PV) 5. Magneto-electric field force system

The first invention relates to field force generators as a counterpart to the heat engine. In field force generators, an elastic force field works controlled by a field modulator; the work is created by relaxing the previously tensioned field like a spring. This irreversible cycle process takes place in the p, V diagram with 4 cycles.

The field force generator can alternatively be constructed as a right or left cycle process machine. The second invention relates to field semiconductor modulators. These are components that do not conduct, control, amplify, switch, or modulate electron currents, but fields (magnetic field, electric field, etc.)

The third invention relates to field force motors that are supplied with electrical energy.

The electrical energy is converted into force field surges by magnesians or electresers, which can be used as work.

The fourth invention of the connecting rod length variator is a new, highly efficient force-torque converter and can be used for motors, pumps, compressors and others

Systems are used.

B. Relevant prior art

The relevant prior art is named in the selected literature at the end of the patent application.

C. Technical problem to be solved Application of the field machine

The FKG is designed depending on the intended use. For example, a FKG is used as a gas turbine replacement on high and constant

Speed and not designed for changing torque. For example, when used as a drive in a ship or a generator to generate electrical current, a constant speed with high torque is required. Eg when used as a direct drive for a car engine are a changing torque, elasticity and changing speed and short response (high dynamics) required. Here the second invention, the shock wave field force motor (FKE), is a highly dynamic, fundamentally new electric motor, because it is not the tangential force but the normal force that is implemented.

FKM types

1. Longitudinal machines

Longitudinal machines are reciprocating piston machines because they derive their effect from the creation of a large air gap between the PM's.

Types (Fig. 1.1 - 1.2): a) Reciprocating piston field machine Between dead center TDC → TDC → OT non-uniform motion, i.e. accelerated and decelerated motion or oscillating masses (oscillations). b) Free-piston field force machine (linearly oscillating, uses kinetic energy for opposing field compression) c) Orbital piston field force machine Stroke oscillation = rotary oscillation, therefore no crank loop is necessary → little rotating parts Transversal machines can also be built as reciprocating piston machines; here the oscillating transverse movement is the "stroke movement".

Longitudinal force machines (Fig. 1.1 a, b) 1.1 Piston FKM Bern .: Wanderfeld FKM linear oscillation with lateral / tangential force; very long stroke possible: FM movement in the y-axis (Fig. 1.2 a, b, c). Subspecies: Taumeischeiben-FKM Exzenter-FKM 2. Transversal machines

Transversal machines are only for shifting the PM - in relation to each other with a constant air gap - not like the generation of a large longitudinal air gap in reciprocating piston machines. Types a) Rotary piston field force machine Radial "stroke", machine has no "dead centers", movement conversion not necessary, no free mass forces (all can be compensated). b) three-phase field force machine (Fig. 2 a, b, c) rotating field, similar to three-phase machine - axial and radial disc design c) traveling field field machine (Fig. 1.2 a, b, c) linear machine, linear oscillating or linear motion with traveling field Transversal FK vs. Longitudinal-FKßH In the longitudinally working FKM the longitudinal (normal direction on the pole faces) force-displacement characteristic curve is used - the stroke is variable, depending on the pole face shape (plane, cone, diving system) etc. (Fig. 3).

The kinematic function in the operation of the FKM thus corresponds to a reciprocating piston machine that can be implemented in different types (see ff.). The transverse FKM differs in that the repulsive ones

Magnets are always at the same longitudinal air gap distance, but the transverse repulsion-force-displacement characteristic is used in the tangential direction of the magnetic surfaces. The FM also moves transversely in the kinematic version, but perpendicular to the transverse movement of the PM's, i.e. always in the same

Pole direction (not from + → -).

With this principle, transversal machines can be implemented as traveling field FKMs (translation machines) and rotating field FMs (rotating machines) - see FKM types.

When moving the FM, attention must be paid to the state of equilibrium so that there are no asymmetrical attractive forces on the FM. A PS can also be used here to bridge the air gap with a large field flow.

Scaying (in nano, micro, macro, large-scale technology) All of the various operating conditions mentioned above can be solved in every scaling level by the design principle, which is dependent on the intended use - the functional principle of the FKM remains the same.

paradigm shift

The Fe / dkraftmaschine is on the one hand a counterpart to the heat engine (both generate a force or energy in a circular process in the p, V diagram, which can be converted into a torque by the crankshaft) and on the other hand to the dynamo principle of Michael Faraday (electric current becomes generated by moving an electrical conductor in a magnetic field), but with the essential difference that in the first case fuel (gasoline / gas etc.) and in the second case mechanical energy (torque, force) are supplied from the outside, etc.

With the FKG, the field batteries are installed as permanent magnets (PM / PE / SM) and are only supplied once from the outside - the system limit is therefore in front of the magnets. However, the driving, force-generating permanent energy field (field force of the magnetic field battery) is in the overall system of the machine (initially comparable to a very long-lasting electrical charge of a battery or very long-lasting fuel rods of a NPP). In contrast to nuclear fuel rods, the field batteries no longer need to be replaced / replaced due to their special properties. Any kind of additional energy supply from the outside is therefore not necessary for field batteries in their practically unlimited lifetime. The field force machine as a non-classical field quantum dynamic machine therefore leads to a paradigm shift: from the primacy of matter (particles = electron flow in the conductor, nuclear energy with neutron flow, fossil fuels etc.) to the primacy of the energy field (field quantum flow with switching) of the exchange field).

Today: consumption of matter (gasoline, fuel elements, etc.). Fundamentally new: active use of energy fields.

Progress / benefits Any type of combustion / electric motor / gas turbine / battery (at

Cars, planes, trains, ships, bikes, computers, pacemakers, energy "sources" in your own home or power plants, etc.) can be replaced so that there is no need to refuel or recharge during the lifetime of the system.

The FKG delivers the following result in the energy balance:

1. Today's generators and motors use the tangential force on the surface. FKG and FKE, on the other hand, use the normal force (perpendicular to the surface) in the longitudinal machine: this creates a considerable increase in force / torque.

2. The high efficiency arises from the longitudinal-to-transverse force-displacement ratio, ie force-displacement of the field battery work W _from in the normal direction to force-displacement of the field modulator in the transverse direction work W _2U (FM = almost powerlessly switchable).

3. The field pressure p and the resulting force F along the stroke h (path in the normal direction) in volume V = work in the p, V diagram, is through the invention of the connecting rod length variator with crankshaft and a lever arm at φ = 90 ° KW, instead of as with the classic crank loop at φ = 0 ° -12 ° KW, - because of the higher efficiency of the translation-rotation converter (connecting rod length variator) - a significantly higher torque and and a higher power of the machine is created ,

1. Field force generators (FKG

A. Presentation of the invention! Basic principle / structure The field force generator consists of 3 parts: 2 field batteries FB and one

FM field modulator. The field batteries can be magnets (permanent magnets PM or superconducting magnets SM) with control of the effect of the magnetic field or permanent electrets PE with control of the effect of the electrical field. The principle of the field force generator according to the invention can also be applied to non-permanent potential and vortex fields. The

The principle of the field force generator can be applied analogously to all types and dipole fields of potential fields, swirl fields and dipole fields.

The field generator can therefore also be based on the following principles: a) heat field engine, FM is a ditherm plus two heat field sources (thermal), as a thermal capacitor u./o. b) Realize gravitational field force machine, FM is a digravitum, plus two gravitational field sources (gravitum), as a gravitational capacitor.

The work in these fields (heat field and / or gravitational field) is path-dependent. With appropriate structural design, field sinks can also be used.

The field force generator will be explained using the example of controlling the effect of the magnetic field in PMs.

The field force generator as an energy "source" (magnet PM / SM or electret PE) generates in the case of the PM from magnetic field energy permanent ferromagnetic fields with the help of a field modulator / FM mechanical energy. The FM is a thin, magnetically switchable ferro layer with a toggle switch function that acts as an active FM for magnetic fields or electret fields between the conductive or blocking / isolating states and, if necessary, with a reinforcing effect.

In the present invention, new magnetically acting M-diodes and M-transistors are also used as M-bipolar or M-field-effect transistors as field modulators, and M-thyristors, M-GTO-thyristors, M-thyristor diodes, M in power magnetronics -Triac and M-IGBT, introduced.

Purpose: switching / amplification of magnetic fields, the same applies to electret fields.

The FM, with pulse compensation 2 FM parts, are oscillating magnetostatic masses with negative (attractive) magnetostatic field interaction (phenomenologically like quantum-like lattice vibrations) and transmit an attractive exchange interaction between the antiparallel "line"-PM's. In this equilibrium state the PM's behave like "bound" Cooper pairs in the basic state with E = 0. II. Magnetic / electrical capacitors

1. Definition, dimagnetic / magnetic, dielectric / electrical

Dimagnetic (μ _τ ~ 1> 1) = non-conductive (di = through) Magnetic (μ _r → max) = conductive

Dielectric (ε _r ~ 1 1) = not conductive (di = through) Electrical (ε _r → max) = conductive

2. Model The Feidkraftgenerator acts like a magnetic capacitor with the same name (antiparallel) of the magnetizations on the magnetic pole surfaces and a dimagnetic in between for mutual magnetic isolation and the establishment of a balance between repulsion PM and attraction FM. For clarification, we do not speak of "inductance" in the magnetic system, but of "magnetic capacitance", since the force effect between the magnetic pole faces is to be explained as a magnetic capacitor with a dimagnetic (= field modulator) in between.

Analog principle of electronic capacitor

In the electrical field, the electrifications in the ferro / ferrielectric are from

Electrets generated. Dimagnetikum = Feidmodulator a) transversely kinematic passive or active b) stationary passive or active

According to the invention, the field effect in the capacitor can also be controlled in the case of non-permanent fields and also in other types of potential and vortex fields.

3. M / E capacitor function

If the space between the magnetic conductors ("source" = magnets) of a magnetic capacitor is filled with a magnetic insulating material (dimagnetic or dimagnetic medium with permeability), the magnetic capacitance C _{m increases} . If a dimagnetic is pushed into the space, the magnetometer's magnetic voltage display drops. The same principle applies analogously to the dielectric with the capacitance Cό and

Permittivity ε.

4. Capacitor function

There is an essential difference between a magnetic capacitor without or with a dimagnetic at a constant magn. Voltage and a capacitor with 2nd constant magnetization:

Force between two magnetizations

In Coulomb's law, ε _{r is} in the denominator, as is μ _r in the magnetic force law, ie the force between two charges / magnetizations is in dielectric / dimagnetic medium smaller. This is a case analogous to the electrical / magnetic capacitor with constant charge / magnetization; with dielectric / dimagnetic between the plates / magnetic plates, voltage U or Θ and field strength E or H decrease.

Whether the energy density in the medium is greater or less than in a vacuum depends on the boundary conditions: In cases that are analogous to the "capacitor with constant voltage", H or E remains constant and w _e or w _m is proportional to ε _r or μ _{ . In cases analogous to the "capacitor with constant charge / magnetization" (type FKG), E and H as well as w _θ and w _{m are} proportional to 1 / ε _r and 1lμ _r .

The basic principle of the FKG is therefore:

1. The effect of a magnetic capacitor with a dimagnetic between ^{"" the} plates and

2. The establishment of a balance between the repulsion of the antiparallel arranged magnetic plates PM's (positive energy) and the attraction by the dimagnetic FM (magnetic capacity as negative energy). The variant magnetic plates and an FM in the middle with repulsive effect is possible with diamagnetic FM material. These include: precious metals ion crystals, Van der Waals crystals covalent crystals, molecular crystals type II superconductor type I superconductor

An FKG anti-condenser principle consists of:

1. Two dimagnetic plates are in equilibrium with no FM in between and are only attracted when there is an attractive FM-PM in between.

2. Two diamagnetic plates are in equilibrium with no FM in between and are only repelled when there is a repelling FM-PM in between.

5. Magnetic capacitor types

According to the invention, there is an anode ./. Between the magnetrodes (electrodes). M-cathode the dimagnetic. A diagram can show the voltage-capacitance ranges of the magnetic FM capacitor types. - Ferro / ferri metal foil and dimagnetic foil

- Metallized ferro-Zferri dimagnetic film

- Magnetrolyte

- Sintered dimagnetic - Ferro- / Ferri ceramics Class I: low dimagneticity constant μ, Class II: high dimagneticity constant μ _r Class III: very high dimagneticity constant μ _r Ais as the starting material, a ferro / ferrimagnetic disc is used, which by means of reduction and oxidation processes magnetic semiconductor barrier layers forms that act like a dimagnetic → voltage-dependent capacitance values Manufactured as multilayer capacitors → high volume capacitance - adjustable capacitors - variable capacitor - air / ferro / ferri ceramic trimmer - integrated magnetic capacitor - variable capacitance diodes - FM block capacitor, - FM variable capacitor According to the invention, all capacitors can be implemented using the magnetic (magnet) or electrical (electret) principle. in. Vvirkprinzip FKG-System 1. Field force generator (FKG) For the sake of simplicity, the terms refer to ferro- / ferrimagnetic substances and effects in explaining the principle of operation, although the principles of action of the ferro- / ferrelectrically soft and hard substances are used in the further description are phenomenologically the same and the

- Patent claim also relates to these phenomenologically symmetrical principles of action (cf. hysteresis). This also applies to the superconducting magnet as an SM replacement. The field modulator with the thickness s is in version A) in the middle between the longitudinally repelling magnets (Fig. 4), in the version "Inline-FM". The FM can also be split 1/2 (pulse maintenance, shorter shutter speed Field force 1/2 for repulsion, 1/2 for PM-FM attraction B) is arranged outside the magnets that come closer to d (0) than d) (without FM in between with thickness s) (Fig. 5) , Outline-FM and with a suitable thickness s creates an equilibrium by attraction between the repulsive antiparallel oriented magnets, because the soft magnetic material has a strong attraction according to the permeability (negative energy = attractive, positive energy = repellent) on the two magnets If the kinematic field modulator is moved transversely parallel to the PM surface (potential direction) and removed from the area of action of the PM, less work is required (→ transversal force-displacement characteristic, transversely le attraction of the FM from the PM's is compensated) than the longitudinal work when repelling the PM's (→ longitudinal force-displacement characteristic perpendicular to the PM surface (in the normal direction)), because in the best case a field with a magnetic preferential direction transverse to the FM Movement, ie on an equipotential surface (potential energy remains the same), is cut (Fig. 6). Cutting field lines across the equipotential surface → no work, none potential energy. Bern .: If the field is inhomogeneous in the x direction, the FM can move perpendicular to it in the y direction on an equipotential surface without any work. F _t due to not strictly homogeneous field. The field force generator changes between the state of equilibrium

"PM repulsion and FM attraction" in the non-equilibrium state (tilt function = non-linear tilt vibration). Both PMs receive an elastic field shock (pulse) in the longitudinal direction and therefore move from the TDC position of the crankshaft to a TDC position in which the FM is closed again and a new magnetic one when FM = "Closed"

Establishes equilibrium so that the PM's can be moved back to the TDC position without any counterforce (repulsion) (FIG. 7). The movement between the equilibrium states at OT and UT position is dynamically oscillating and at different ones

Speeds (frequencies, parametrically stimulated by the FM).

Due to the transversely kinematic oscillating movement of the FM lock (from transparent / air = "OPEN" to intransparent = soft magnetic material in the field = "CLOSED") the magnets oscillate, whereby a) a restoring force, e.g. due to the flywheel mass of a flywheel (with vibration damper also dampens the field shocks in the cycles and accelerations / decelerations at OT / UT) on a crank shaft, the magnets move back to the starting position (OT = top dead center = 0 ° KW) (cycle process , Idle stroke), or b) two further magnets, each with an FM in the UT position (UT = bottom dead center = 180 ° KW), which reset to TDC by repulsion while the 1st FM is closed, i.e. no repulsive ones There is force between the magnets at TDC (Fig. 8).

The oscillating field impact, transmitted as an impulse to the connecting rods, is used as useful work at OT (and possibly UT = use of stroke-h). For example, elastic field impact → pressure on the PM surface with movement in the

Volume V → force for moving a coil in the magnetic field as an E-traveling field linear generator, or converted into a torque using connecting rod length variators and a crankshaft (Fig. 9). 2. Magnet / electret field battery

Field battery / magnet design (PM)

Two 2 field batteries = permanent magnets with repulsive (or also attractive) orientation (antiparallel) repel each other with great force. The decisive factor in field battery / magnet design is the ratio of force to dead weight, which has to be optimized by the kinetic energy of the moved

Keep magnets small and powerful. The force-displacement characteristic in the normal direction determines the work W that can be generated in a p, V diagram in an irreversible cycle. A particularly advantageous magnet design is achieved through a sandwich arrangement. As a field battery we refer to magnets or electrets or superconducting magnets arranged in xyz or in a triangular network (Fig. 10). The PM's or PE's or SM's can be interconnected to form PM / PE / SM field batteries in order to achieve a cumulative high force with relative to maintain low weight.

The PM or PE are to be designed according to an optimum of adhesive force to own weight under repulsion conditions so that no demagnetization takes place (note demagnetization factor N = 1 for (BH) m _ax ). → Minimization of the kinetic energy.

The KraüANeg function of the longitudinal force-displacement characteristic is to be designed according to the oscillation stroke and the required torque development (e.g. flat pole face, concave surface, cone, plunger magnet, etc.)

3. Field modulator (FM)

Field modulator basic principles

The FM field modulator is operated using a kinematic or stationary principle. 1. Kinematic FM: The kinematic FM can be built passively and / or actively; it switches between matter in the field (FM conductive) to air / gas / vacuum in the field (non-conductive). The active version uses the effect of attractive auxiliary fields to a) support the attraction or b) with an attractive effect to reduce the thickness of the FM c) to compensate for attractive / repulsive eddy current effects or magnetic transverse effects 2. Stationary FM: The stationary FM can only be implemented as an active FM with various alternative operating principles.

Field modulator types

The field modulator is a dimagnetic. 1 FM between 2 PM acts like a magnetic capacitor with the essential feature of creating an equilibrium state by introducing the magnetic capacitance. A field modulator between the two magnets can therefore switch the repulsion of the PMs on or off (only the effect of the field, i.e. the energy in the space between the magnets). The FM has the state "open or" closed ". In this switching process, the FM is switched from" not conductive "==" open, e.g. Air between the magnets, switched to "conductive" = "closed" = ferromagnetic material between the magnets. The ferromagnetic material in the gap between the magnets increases the magnetic capacity so that an equilibrium occurs between the repulsion of the PM's and the attraction of the ferromagnetic material (FM dimagnetic): With FM = "closed" the 3 elements are in the static and dynamic (eddy currents) equilibrium state.

Attention must also be paid to the operating point at maximum conductivity ( _ma χ at B _op t) of the ferromagnetic / ferrimagnetic substance in the magnetic field; at the operating point of the flux density-field strength characteristic, the switching effect is optimal and leads to a thin field modulator, which leads to a very small air gap when set to "open". Note a certain magnetic shape anisotropy that maximizes the directivity in the tangential direction (blocking effect in the normal direction).

To prevent the air gap and thus the force = path = loss, a pole piece (PS) with anisotropic ferro / ferrimagnetic material can be used. This anisotropic material between the magnets preferably conducts in the normal direction, so that the repulsion is reduced only very slightly. Also note a certain magnetic shape anisotropy that the

Line maximized in the normal direction (blocking effect in the tangential direction).

The field modulator and pole piece can be made in a kinematic (unsteady) or stationary version. In the case of the stationary FM or PS, the "translucency" for magnetic flux quanta is switched between "open and" closed "without the FM or PS having to be moved. In the kinematic variant, the FM / PS is moved in an oscillating position.

The FM or PS can be arranged as an inline FM (between the magnets) and as an outline FM (outside the magnets). The change of state

Balance / non-balance remains unaffected.

The field effect control of the FM can be done with conductivity modulation or with channel cross-section modulation through a field across the channel.

3.1 Differentiation between kinematic and stationary FM Kjtϊθmaϋseher FM: transversal movement / oscillation with transverse magnetic attraction, inductive eddy current (magnetic repulsion), as well as heat compensation, if these occur. There are almost no eddy currents in ferrites because they have a very high spec. Electr. To have resistance.

FM lock open = air, gas, vacuum between the PM,

FM closed = soft magnetic material plus possibly static / dynamic auxiliary fields as active FM (Fig. 11).

-F _t due to PM (transversely weakly attractive) and due to eddy current forces (weakly braking) when the FM oscillates = damping of the vibration, Lorentz forces inhibit the movement even if the B field changes over time (PM oscillation). Eddy current power loss proportional to the sheet thickness → -: s. Note the skin effect at high frequencies.

→ Active FM with dynamic compensation system

(Anti-eddy current system)

Transverse force compensation. The kinematic FM can carry components of the active FM to compensate for certain negative induction force effects (Fig. 12).

Stationary FM: Dynamic change in conductivity (permeability or

Permittivity) if necessary plus dynamic auxiliary fields (strengthening attraction base +

Eddy current repulsion compensation). The stationary FM always remains in its position in the middle (plane of symmetry) between the PMs. This FM type can only be built as an active switch / amplifier, since it changes in its stationary effect and is not shifted kinematically in its position.

Stationary FM: "Zu" = "Isolator'VSperrschicht = high permeability μ _τ > 1 - ferro- / ferrimagnetism" OPEN "« transparent = low permeability μ _r «1 = high paramagnetism (Fig. 13).

Overview of FM types a) Conductive / non-conductive FM (ParaFerro / Ferri-FM etc.) c) M-transistor effect with magnetic semiconductor FM. b) M-TühneleffekTvön flux quanta for the closed FM (Fig. 14).

Variants a) can be used with or without induced eddy currents with lamination (permeability layer + anti-eddy current structure) (Fig. 1S) and open / closed shield housing geometry

(double-room shielding housing with one PM each).

3.2 Passive field modulator

In its basic position (non-transparent = "closed") the FM provides the necessary balance between attraction by the FM and repulsion by the

PM's ago (all transverse forces are zero).

Eddy current losses, hysteresis losses and spin relaxation only occur with dynamic oscillation of the PM's and with electrically conductive material, at high frequencies only in the surface of the FM. Each face of the FM is related to the respective one

PM directed because the surface is not exactly in the plane of symmetry (the FM has the thickness s). The induced Lorentz forces acting negatively in FM are dynamically compensated. In addition, the two PM's are in reverse antiparallel

Equilibrium position (passive FM closed) oriented in which the field diffusion effects in the FM, when the PMs move towards the closed FM in the FM, because of the mutually neutralizing repulsive effect of the PM fields (Lorentz force due to the compensated induction current = induced magnetic moment

(Lenz's rule) = zero) in the middle of the FM (because of the opposite direction of rotation of the eddy currents). However, they do not cancel each other out on the surface of the FM because of the distance Δs from the center (plane of symmetry) of the FM to the PM. The magnetic reversal of the FM does not occur in the middle of the FM either, because the field effects cancel each other out in the middle of the FM (state of equilibrium). Dynamic compensation of the induced Lorentz force with electrically conductive FM material and magnetic bias

All dynamic effects that occur on the surface of the FM (as a result repulsive forces when the PMs approach the FM (FM = closed) (- »Lenz's rule)) are compensated dynamically by an active FM, or by a magnetically attractive" preload ", which only comes to a "static" substitute equilibrium at higher frequencies because an actively attracting FM auxiliary field compensates for the lack of attraction at a standstill. This shifts the static state of equilibrium to higher frequencies and the FM can become thinner in thickness s, which means that the PM's can dynamically come closer to each other and the repulsive force during impact (FM = OPEN) is much greater (note force-displacement curve). In the static state, with magnetic bias, without an auxiliary field switched on, the repulsion is greater than the equilibrium, giving the PMs a certain new, larger one

Take equilibrium distance, crazy by Δs, which does not correspond to the FM thickness s.

When closed, the field modulator (FM - conductive) acts like a barrier / "insulator" for a magnetic field, just like in one

M transistor (= field quantum valve) when the base is switched off or the channel cross section through the applied gate field for field quantum flow = zero). The permeability μ of the soft magnetic alloy determines the thickness s of the FM between the PM's (magnetic conductivity μ- oμ _r ) due to very high permeability.

The very different "shielding" effect in a geometrically open or closed housing (magnetic shunt) determines the degree of mutual shielding of the repelling PM's - each PM can have its own housing, which are coupled by the FM (Fig. 16). Bern. : In closed geometry, eddy currents are induced depending on the frequency, which lead to an increase in repulsion, but only if stray fields enter the housing, see ff. Chapter Field modulator.

The FM lets the permanently stored potential field energy of the PM's through its action (force effect as field quantum flux) or blocks it (similar to a camera shutter for photons from the sun).

The field modulator made of very good magnetically conductive soft magnetic material with a corresponding thickness s has an attractive effect on the PM's, the stronger the thicker - the large repulsion of the PM's becomes the equilibrium state with increasing thickness, and then further increasing thickness from the equilibrium state with the FM, into a strong one

Attraction changed in the force-displacement characteristic.

The PM's cannot normally maintain a stable equilibrium unless the FM is positioned symmetrically to the PM's and the PM's are not are mechanically coupled via gears or crankshaft so that they cannot approach one side (unstable balance) without moving the other PM at the same time. From a certain thickness s etc., the balance tilts into a strong one

Attraction by the PM's. Conversely, the attraction is increased if the thickness s is smaller than in the state of equilibrium (FIGS. 17a-c).

The thickness s, shape, material, internal structure, etc. of the FM thus regulate the equilibrium state of the mechanically symmetrically coupled PM's by means of a non-linear tilting function. This is the basic principle of a passive FM.

Decisively high permeability (magn Leitfähikeit.) Modulation at ( "max B _o t and a corresponding alloy, and the anisotropic crystal structure, as well as the change of μ with andereFBIechd / c / ce and Lamellenfom ?.

There is also an active basic principle in which the FM, for example in the permeability induction curve, or in the temperature * induction _* curve (switching the effect from ferromagnetic to paramagnetic at Curie temperature Tc), from "transparent" - "OPEN" (non-conductive ), according to →

"intransparen =" ZU "(conductive), is switched

This also applies analogously to ferrimagnetic and ferro / ferrielectric materials (Fig. 18a - e). The SM can also be switched from superconducting to normal conducting by a temperature gradient.

Energy balance between longitudinal to transverse force-displacement characteristic Her kinematic FM moves in the transverse direction preferably on an equipotential surface, i.e. across the magnetic preferred direction of the PM fields and across the longitudinal direction of the (generally inhomogeneous) force fields in the equilibrium state at TDC. Potential energy would be required or gained with longitudinal movement of the FM, so that with kinematic-oscillating FM - due to the equilibrium state PM-FM-PM and high magnetic conductivity in the FM - very little energy is consumed → ratio longitudinal force-distance -Integral (PM work) to transverse force-displacement integral (FM work). → The work difference is very large (Fig. 19) and falls in favor of

FM movement with E → O ays, sequence; You can move transversely almost without power via FM (also note ferrimagnetic material without induced eddy currents; in the case of electrical conductors, the Lorentz force is prevented by an anti-eddy current principle). The FM only switches the effect of the force field, i.e. the

Exchange interaction = the spontaneous magnetization / polarization or the spinning moment or moments of the SM's. The magnetic preferred direction can be improved, for example, by means of sheet metal with a soft magnetic orientation or by a material with strong crystal anisotropy, for example with a hexagonal structure. The FM can therefore a magn. Preferential direction in the direction of the magnetic field lines, i.e. from the PM + pole to the PM pole of one and the same PM. The force-displacement characteristic (work) differs depending on whether the FM movement takes place parallel in the field and pole direction or perpendicular to it, i.e. on an equipotential surface, and whether the sheet is grain-oriented or not (usually the grain direction is parallel to the rolling direction ) (Fig. 20). 3.3 Active field modulator is supplemented passive FM fundamental principle is an active FM principle regardless of whether a kinematic or stationary FM used ^~. The decisive factor is that static and / or dynamic forces have to be compensated for - if they occur in a disturbing manner, which generally means the induced Lorentz forces, but also magnetically transverse forces if they occur during the movement of the FM. An active FM can also be used to reduce the FM thickness, since the soft magnetic FM Stσff has a reinforcing effect in an FM coil. 1. Basic principle of FM = static balance with soft magnetic material with FM thickness | s | etc., initially ferrimagnetic material, because this hardly allows any induced eddy currents. If the transition to metallic materials is used for optimization, anti-eddy current principles can be applied (→ point 3). 2. Effect compensation of the repulsive force with a thinner FM thickness sa) by means of a statically attracting auxiliary PM constant field with a reinforcing magnetic toggle switch, see ff. B) by an actively dynamically attracting auxiliary field with a reinforcing soft magnetic core, see ff. C) by Attraction reinforcing, instead of switching functions, for example with an amplifying M-transistor effect. 3. Dynamic compensation of the negative force (repulsion) from eddy current, magnetic reversal and spin relaxation effects: a) dynamically adapted, kinematically moving, attracting soft magnetic lamellae, change the FM thickness s dynamically with frequency b) by magnetic attracting Preload with constant auxiliary PM constant field c) through dynamically variable attractive active auxiliary fields with soft magnetic core, see ff. 4. Electrodynamic field FM as a replacement for the soft magnetic FM with thickness s (worst efficiency, since no reinforcement by soft magnetic material). All variants are fully controllable from the states "transparent" with μ _x «1 to

"non-transparent" with μ _r → _ma χ / _B opt-

4. Pole shoes for bridging the air gap in kinematic FM

As an option for transmitting the field force without an FM air gap (→ force field closure), the following can be carried out according to the invention:

When the FM is open, a PS is used to create a river bridge through one or two pole pieces (depending on the design variant) between the repelling PMs. If the FM is opened, i.e. moved transversely, an air gap with the thickness d = s + 2Δd is created, and a large drop in the magnetic force in the force-displacement characteristic curve arises in this air gap. This drop in force is caused by transverse, simultaneous with the FM movement, subsequent pole shoe (s) with high, strongly anisotropic conductivity in the longitudinal direction e.g. a) Co hexagonal crystal anisotropy in 00.1 »direction, or b) grain-oriented, or c) egg / bicrystal,

Taking advantage of the Föfmäriisόtröpie, balanced - and thus the field transmitted by directed river line (Fig. 21).

Basically, the PS works the other way round like the FM:

If it is present, there is high conductivity in the direction of the counter-PM (opposite to the FM with high conductivity in the transverse direction). The "pole piece" (PS) consists of several flux guide pieces. The flux guide pieces establish the flow in the normal direction between the individual poles of the various repelling magnets, so that the original force of the PM can be transmitted at a distance of h = 0 with almost 100%. If necessary, there are only the 2 air gap gaps Δd, which serve as a gap for the mechanically frictionless movement of the FM / FP / FS, unless a wedge function-is used (→ construction variants).

5. PM-rCθιben and PM's in the Magneikre with attraction

According to the invention, the FKG constructions were explained using the repulsion principle. The FIGS. And texts (FIG. 22) show that, due to the construction by FM flow diversion, an attraction principle with an attracting soft magnetic counter PM instead of a repelling counter PM can also be realized according to the invention. The magnetic field is led out by the highly conductive, switchable FMs, which are in balance between attraction (FM) and repulsion (PM's), so that the soft magnetic piston closes the magnetic circuit: principle of attraction by 2 FM's. Consequence: The FM's conduct the magnetic flux without physical Contact (very small air gap) to the piston crown / yoke; the air gap is much smaller than the FM thickness. In contrast to internal FMs (Inline-FM) with direct repulsion and loss of power - because of the FM thickness = air gap - the maximum force with this solution is via the magnetic circuit to the piston crown The moving mass is much smaller than in the previous solutions, since the magnets act as a stator, only the FM's and the piston (attraction) move oscillating. Problem: Tangential separating force on the piston crown: Reduces simultaneously with the separation of the PM's (the field battery FB) by the FM's.

6. Switching states of the FM

"ZU" = lock-insulated "/ non-transparent = magnetic conductive FM: Physically = magnetic flux quanta can the FM due to high conductivity μ = μoμ _τ (due to high permeability) of the FM in the normal direction

(Longitudinal direction) do not cross, they are diverted in their flow in the tangential direction (transverse direction) / diverted to the outside, i.e. FM with shielding effect. "CLOSED" means: ferromagnetic attractive exchange interaction (spin coupling) effective (→ FM switched on).

"OPEN" = open non-insulated "/ transparent = magnetic non-conductive FM: physically = magnetic flux quanta can the stationary FM because of very poor conductivity (low permeability μ _τ * 1) of the FM, or with the kinematic FM air / gas / vacuum, the Traverse the area

River quanta are not diverted in their flow, i.e. they act as a repulsive field in the direction of the anti-parallel oriented counter-PM, i.e. FM with a non-shielding effect. "OPEN" means: Ferro- / ferrimagnetic attractive exchange interaction (spin couplings) ineffective (→ FM switched off).

From the field force shocks by opening the FM, longitudinal elastic shock waves from magnetostatic sub-field quanta are created and from this a mechanical primary force along the path in the normal direction (longitudinal machine) or the path in the transverse direction

(Transverse machine) or a primary torque with respect to the angle

(Rotary machine).

From this force / torque, electrical current can be obtained with an e-generator and / or a drive torque can be used directly.

The invention includes a system based on various FM principles. The compensation or elimination of induced eddy currents with anti-Lorentz force and anti-Lenz force are guaranteed by special designs and working principles.

IV. Principle of operation & design magnets / electrets

Open permanent magnetic circuit / electric circuit / superconductor magnetic circuit

1. Design permanent magnet (PM), permanent electret (PE)

The inventions apply to ferromagnetic, ferrimagnetic and analogously to ferroelectric and ferrielectric materials.

Ferrimagnetic substances have a very high spec. elec. Resistance, however the energy density is much lower than with ferromagnetic materials. In the following stipulations, the ferro-dielectric materials (PE) can be interpreted in the same way as the ferromagnetic materials (PM). The design depends on various parameters in the following order:

1. Magnetic material 2. Characteristics, characteristics of the PM type: demagnetization curve, induction B _f , maximum energy product (BH) ax, coercive field strength H _C at T, Curie temperature T ₀ , operating point on the demagnetization curve with demagnetization factor N = 1. 3. Design of the shape of the PM and orientation of the field vectors, eg round magnet vs. Lines magnet.

4. Geometric dimensioning with optimum adhesive force to own weight V = H / G.

5. Functionally design the longitudinal / transverse force-displacement characteristic.

6. Ratio of transverse x characteristic to transverse y characteristic for translation of the FM: vertical vs. parallel to the field lines. When moving parallel to the field lines, field lines lie in the direction of the displacement → force in the direction of the field vector + → -, when shifting perpendicular to the field lines, the field lines / field vectors are cut transversely - + almost forceless displacement, similar to the homogeneous field, here on an equipotential surface.

2. Force weight optimization of the PM

2.1 Total adhesive force and structure of the permanent field battery (FB) The FB can be arranged by lining up many cell magnets to form a magnetic group and several magnet groups to form a magnet = matrix (e.g. triangular network, as with a superconductor = closest packing with an angle also kinematically oscillating FM, or in the xy-direction with orthogonal FM-Oszil! ätiön) in one plane and then in a Käskädefiaufbäü (layer structure in the z-direction) with many such magnetic matrices to a magnetic battery. So we get a very large optimized force in a small space with a small weight. The addition of the adhesive force of such PM packages results in significantly more adhesive force than an equally heavy individual PM.

V. Principle of operation & design of field modulator 1. Field modulator Prinzspier. (M-FM)

General principles

We distinguish between the magnetic field modulator control:

- magnetic field conductor (conductivity = high μ = μoμ _{ , note modulation in permeability-induction characteristic with μ _max - B _opt ). - magnetic field non-conductor (μ _t ≥1 (air, vacuum, paramagnetic substances, ferromagnetic substances, etc.) = magnetic insulators - dimagnetics (dia - through).

- magnetic field semiconductors.

The above system applies to ferro- and ferrimagnetic soft materials. Effect in ungleichnamigen PM-poles of the magnetic capacitor: If a Dimagnetikum placed in a magnetic field, the magnetic field strength decreases from that of the vacuum to the μ _r th, while the magnetic capacitance contribute by the Dimagnetikums the μ _r times increases.

For PM Poles of the same name:

When the dimagnetic FM → field strength is reduced (voltage is reduced) = repulsion becomes smaller, capacity increases. The FM acts in the direction of each PM like a PM with an opposite sign (attractive), or like a non-magnetized plate

In the electric field (electrets) applies to the field line

- electrical field conductors (conductivity = high ε = εoε _r , note modulation in permittivity-displacement density characteristic with ε _max - D _op t.

- Electrical field non-conductor (ε _r ≥1 (air, vacuum, ferroelectric materials, ceramic (HDK), etc) = electrical insulators = dielectrics (dia = through).

- electrical field semiconductors

The aforementioned system applies to ferro- and ferrielectric soft materials.

Effect in ungleichnamigen PE-poles of the electrical capacitor: If a dielectric placed in an electric field, the electric field strength decreases from that of the vacuum to the ε _r th from (voltage decreases), while the electric capacity contribute by the dielectric increases ε _r times.

For PE poles of the same name:

When the dielectric FM → field strength is introduced (voltage is reduced) = repulsion becomes smaller, capacitance increases. In the direction of each PE, the FM acts like a PE with a sign of the same name (attractive) or like a non-magnetized plate

M-field modulator and E-FM

M-FM = ferro- / ferrimagnetic field modulator (contrast: ferro- / ferrielectric field modulator = E-FM with ferroelectric substances). The functional principles of the M-FM are based on that of

E-FM phenomenologically transferable.

The basic principle of all field modulators is switching or amplification or

Reduction of the permeability / permittivity in the gap between the PM's / SM ^'s , ie from conductive to non-conductive or "closed" → "open or vice versa. When the FM is introduced, the capacitance is between the repulsive ones of the same name

PM pole, enlarged, the field strength decreases, when the FM is opened, the

Reverse effect.

The field modulator is a dimagnetic or dielectric for fields and not for electrons, creating an equilibrium state.

The effect is explained below using magnetic fields. optimization

In particular, it should be borne in mind that ferrimagnetic substances contain hardly any electrons and are therefore practically non-conductive. In this case, the core principle of the FKG can be better understood - without eddy current influences.

When using metallic magnetic field conductors, electrons are present in the FM (the free conduction electrons are the cause of the eddy currents), which according to the invention are compensated for, reduced or eliminated by suitable technical solutions, as an optimization of the core principle without electrons in the FM.

The magnetic-transverse force effect (attraction of the FM) must also be compensated for in the case of transverse movement parallel to the preferred magnetic direction of the PM field; with vertical movement (on the equipotential surface) this is hardly necessary.

Dynamic vs. static longitudinal equilibrium of a metallic FM

All of these field modulator types follow a dynamic principle:

In the static equilibrium state in the DC field of the magnets there is no dynamic counterforce (Lorentz force). In the basic version of the FM, a

Ferrimagnetic material with very high spec. el. resistance are used, which allows practically no induced eddy currents and therefore practically no Lorentz forces even at high frequencies. Only when using metallic magnetic field conductors in operation with

At frequency f there is a counterforce from eddy currents and spin relaxation: Delay effect through field diffusion: At high field change speeds, induction currents are caused in the soft magnetic FM material of the magnetic circuit due to the presence of conduction electrons in the FM, which counteract their cause (field build-up and breakdown)

(Lenz's rule)). This counterforce reduces the static balance with increasing frequency

(and fast switching operations of the FM), so a dynamic FM must compensate for this frequency-dependent counterforce in a frequency-dependent manner, or move the conduction electrons out of the magnetic field's field of influence so that a dynamic equilibrium is created.

Bern .: Alternating fields:

In the case of screens with openings (open geometry), the shielding factor of the housing drops with increasing frequency. In contrast to completely closed umbrellas (closed geometry) where it increases exponentially. The shielding factor means the field of repulsion of the housing due to induced eddy currents in the shielding layer. - → Use closed housing geometry. Variable FM thickness (Fig. 23)

When adjusting the FM thickness s to increase the attraction of the FM as compensation against eddy current repulsion, care must be taken that the TDC point shifts. Therefore, the PM piston must be readjusted by a) kink-connecting rod or b) integrated control on the connecting rod length variator with -ΔH. Alternative: Negative magn. Preload (for f = 100 - 300 Hz) with -ΔH. Dynamic tracking of the attracting force at stroke h _m i _n → h _max (Fig. 24).

The Lorenz force effects arise when: a) in the closed state of the FM due to the PM movement UT- → OT, b) when the FM moves with transverse cutting of the longitudinal field lines between the PM's.

Dynamic vs. static transverse equilibrium of the FM (Fig. 25 a, b)

The compensation of the occurring transverse-static magnetic attraction of the PM ^' s even with very slow FM movement in a parallel PM field, as well as the dynamic Lorentz forces - due to eddy currents - with a transversely higher movement speed of the kinematic FM, are also solved according to the invention.

Compensation of transverse dynamic forces: a) attraction by PM: Fι = const, F = / (r) Fι = attraction by PM b) braking effect by eddy currents both -F2 and + F ₂ . Fι = attraction by PM F ₂

Note repulsive + attractive forces also neutralize attraction +

Eddy currents in the geometric center of the FM.

2nd fiismatic field modulator (with / without lamination)

Kinematic lock (FM plate moves in different positions)

(Fig. 26):

FM "OPEN" 5 = magnetic flux in e.g. Air (magn. Isolator) → high field strength between the PM's, small capacity

FM "CLOSE" = magnetic flux in the FM (magnetic conductor). → small field strength between the PM's, high capacity

2.1 Geometry of the shielding housing Bern. : Alternating fields:

In the case of screens with openings (open geometry), the shielding factor of the housing drops with increasing frequency. in contrast to completely closed umbrellas (closed geometry) where it increases exponentially. The shielding factor means the field of repulsion of the housing due to induced eddy currents in the shielding layer.

→ Use the closed geometry of the housing, i.e. the geometric effect may be greater than the material effect.

Open geometry: 1. FM as plate with thickness s =

Closed geometry:

2. FM as cover (plate with thickness s) of a double-room shielding housing (in each room a PM) (= closed / open geometry in time) (Fig. 27), variants as mentioned before. 2.2 Passive and active enline and outline FM's

The passive FM has no active longitudinally attractive auxiliary fields / forces other than itself; preferably with ferrites (Fig. 28).

The passive FM can be supplemented with an active FM in order to compensate repulsive eddy current forces etc. or to make the FM thinner in thickness so that the PMs can come closer together. The active auxiliary fields must also in connection with the

Energy consumption of the active FM are considered, which affects the efficiency.

Field modulator types (Fig. 29): Ihline-FM (Fig. 29.1):

Optimization s by increasing the attraction → «; s Fig. 29.1 d): Variants a) Soft magnetic core, reinforcing effect with low coil current at the operating point A _{3 of} the BH characteristic, or coil can be a flat spiral to make it very small (coil etched on ferro substrate). b) Hard magnetic core: magnetization / demagnetization c) Semi-hard magn. Core bistable switchable = binary switchable permanent magnet by magnetizing / demagnetizing pulse.

Fig. 29.1 e): Variants a) Outer permanent magnet with flux guide b) Outer coil (energy must not consume the total balance). Reinforcement by core at working point A ₃ . c) Hard magnetic core: magnetization / demagnetization d) Semi-hard magn. Core bistable switchable = binary switchable permanent magnet by magnetizing / demagnetizing pulse.

Note mass of FM with coil etc. → higher kinetic energy. Fig. 29.1 f): → low kinetic energy, since the coils / permanent magnets do not have to be moved. Field generation variants as previously described.

Outline FM (Fig.29.2) Passive permanent magnet FM or active E magnet FM.

Balance not through ferro attraction, but passive / active fields. Because of the 45 ° position of the surfaces there is longitudinal field and transverse field modulation. Fig.29.2 e): Comb FM

Comb FM may have more attraction because more soft magnetic material comes into effect and the PMs can still get very close (contact → 100% power yield).

FM movement in the x or z direction, depending on the field line direction (parallel 0. vertical). 2.2.1 Soft magnetic material

New: FM with negative magnetic energy - (BH) _max = attraction / magnetic / characteristic curve of soft magnetic materials → negative energy product: - (B (+ H)) _ma χ as negative magnetic field energy (-W), because soft magnetic material attracts in the

Balance against the repelling magnets with positive magnetic field energy (+ W) and positive energy product (B (-H)) _max .

Magnetic shape anisotropy The operating point A3 of the magnetization characteristic for soft magnetic material with geometry-dependent magnetization factor N at - (BH) _m aχ is decisive, analogous to the demagnetization factor for permanent magnets. The working point A _{3 of} the soft magnetic FM plate is at - (BH) _max . 2.3 Active FM

According to the invention, there are several types of active FM's with the following case distinctions:

I. Active FM's to switch / amplify the FM in its basic FM primary effect.

II. Active FM's to reinforce the FM with attractive co-fields to support attractive FM forces. A. → Auxiliary magnetic fields Active FMs to actively enhance the effect with an auxiliary magnetic field. 1. Longitudinal direction Thinner FM layer with the consequence of a higher repulsive effect at PM position in the normal equilibrium distance → strengthening of the attraction by an attractive auxiliary field. 2. Transversal direction attraction by the PM's on ferro- / ferrimagnetic material with magnetic field parallel to the FM movement → reinforcement of the repulsion as compensation of the transverse attraction by repulsive auxiliary field.

III. Active FM's to support the FM with anti-fields to compensate for induced forces. A. → Line electrons not present in the FM (ferrimagnetic substances): no compensation, since spec. elec. Resistance very high. = FM basic principle. B. → Mechanical anti-eddy current principles There are conduction electrons, but minimize currents and forces induced with mechanical anti-eddy current principles. = Optimization 1st Art. C. → electrical anti-eddy current principles of conduction electrons available, but with electrical influence principles bring conduction electrons outside the magnetic field range. = Optimization 2. Art. D. → Magnetic anti-eddy current principles. Conduction electrons present in the magnetic field effect range → active field modulator with active magnetic anti-fields. = Optimization 3. Art. 1. Longitudinal force compensation Repelling eddy current forces (Lenz rule) when FM closed and movement PM UT → OT. The active FM consists of the fact that it can control the strength of its longitudinal attraction in order to maintain the balance dynamically (despite eddy current repulsion due to the conduction electrons in the FM). 2. Transversal force compensation Also the transverse effect of the repulsion by eddy currents (braking effect); can be controlled dynamically.

The compensation can be implemented e.g. B. by active magnetic auxiliary fields (Fig. 30)

Magnetized, 2 FMs lying next to each other in the plane of symmetry of the FKG create an opposing field (antiparallel attracting) to create the equilibrium or to compensate for static / dynamic opposing forces compared to the repelling magnet = "CLOSED". "OPEN" = without magnetization.

The magnetization can be bistable because then the field force is maintained without constant external energy supply during the movement of the PMs from UT to OT. Variants for active field generation / opposing field compensation a) Structure (e.g. coil) with pulse magnetization Unipolar (one-sided) pulse magnetization with field strength stroke Δfi and induction stroke ΔB (magnetization current only flows in one direction in a very short period of time compared to the period = pulse duration). b) Structure (eg coil) with pulse wire The magnetization is carried out by a single jump (Z loop), which results in a high voltage pulse. c) Generation of high-energy current pulses - pulse compression technology using magnetic switches - fabric with a rectangular loop, preferably amorphous metals, due to low dynamic magnetic reversal losses d) Note at high modulation: the shielding factor drops in passive FM with a steep drop in permeability-induction curve when the material saturates. e) A high field coil acts like an air coil without reinforcement by the soft magnetic core.

Coupling active FM with kinematic FM

The active FM can be coupled (and / or) with: a) the kinematic-passive FM, in order to be able to change effects / compensations dynamically. b) soft magnetic double-room shielding housing (magnetic shunt, open / closed geometry in time) without kinematic movement.

3. Stationary field modulator (with no Lameflierung field modulator system overview of active FM variants

1. Permeability-flux density-FM = μ _max / B _opt = max. Conductivity → μmin / Bmax = min. Conductivity, or μi / B _m in = min. Conductivity or flux density change: - Change the distance FM in the normal direction to the magnetic surface PM → Δs → ± ΔB - etc.

2. ThermoMag-FM switching the Curie / Neel temperature. Fe / ro- / Ferri-magnetic Ferro- / Ferri-electrical → magnetization "freeze"

3. Anisotropy FM Change magnetic preferred direction a) Change crystal anisotropy / change grain orientation b) Stress-induced anisotropy - reverse magnetostriction mech. Voltage changes permeability (Villar effect)

4. Soft mag. Induction FM - + ΔB - ^► B ₀ pt - Bmax B _m in pulse magnetization with pulse compression (UT → OT) amplification by the core

5. Hard Magn. Induction FM = magnetic toggle switch, or transient magnetic voltage → variable remanence B _f

6. Induction current FM = induced eddy current "On" / "Off" generated in e.g. AL / Cu layer

7. Limit frequency FM = switching by operating below / above the limit frequency

8. Spin resonance FM - flap of the spin direction (ferro- / ferrimagnetic resonance)

9. ParaFerro- / Ferri-FM = Ferro- / Ferri-front migration Coupling layer or barrier layer travels through the FM, but without temperature change → actively change atomic distance

10. M-semiconductor FM - magnetron / magnetron hole migration (→ magnetronics) → Switching / amplification / triggering M bipolar transistor, or M field effect transistor

11. M-tunnel FM = switching magnetic tunnel current Magnetic voltage → tunneling / tunneling not possible = S _m l _m S _m capacitor magn. Tunnel current with thin I-layer = Dimagetic = FM, magnetic voltage → conducting / blocked

T2. Superconductor HTSL (type 3) -FM = circuit normal / superconducting → temperature change = S _m l _m S _m capacitor magn. Current with thick I-layer = Dimagetic = FM, magnetic voltage → conducting / blocked HTSL type 3 has hysteresis.

General principle of operation of the stationary FM The magnetic conductivity μ-μ _Q μ _r or electrical conductivity ε = εoε _r always has an attractive mediating effect on the magnets or electrets due to the negative field energy, so that with a Feid modulator - for a given permeability or permittivity - the gap channel between the PM's / PE's of μ or ε _r = 1 → max. and reversed and / or amplified / weakened (Fig. 31).

Switching the ferro- / ferrimagnetism on and off In the magnetic case, all substance-active principles boil down to the fact that

Spin coupling or the exchange interaction of the uncompensated inner electron shells is canceled in the case of transparency (- switching off the ferro / ferrimagnetism), and vice versa: When the ferro / ferrimagnetism is switched on, the flux quanta cannot pass the FM:

The field of the anti-parallel PM's is strongly deformed in the FM due to the high conductivity of the substance in relation to the flux density B (FIG. 32). This has an impact on the spin moments of the domains (Weiss districts) from statistically distributed / disordered / paramagnetic effects in directional order with regard to the antiparallel PM field lines in FM (high

Conductivity), as if you had _. the Curie or Neel temperature fell below. Note: There are also substances with the opposite effect regarding the Curie or Neel temperature. Note impulse permeability

"Open because of μ _r « 1 (paramagnetic) "Close" because of a) active coil switches between with μ _max - B _op t → μ _τ ~ 1 - B _maκ , or b) to the other side of the characteristic with μ-, - B = 0, balance plus variable compensation c) Bistable: semi-hard magnetic core = switching of constant fields

FM as field switch (Fig. 33)

Stationary active thin barrier layer at normal temperature with the FM types: 1. Conductive-non-conductive FM, switching with respect to BH characteristic 2. ThermoMag-FM: Switching the Curie or Neel temperature 3. Limit frequency field switch 4 Magnetoelastic field switch 5. ParaFerro- / Ferri-FM switching the exchange interaction with an atomic junction Movement of the spin coupling through the crystal 6. M-semiconductor FM, switching with M-field transistor effect 7. Tunnel effect FM, flux quanta tunnel through the FM

Fig. 33: General principles of the field modulator Modulation of the ferro- / ferrimagnetic static field by: A) Kinematic switch with passive and / or active element; passive: blocks the PM field, active: counterforce (compensation) due to an attracting magnetic field. B) Bistable Tc permeability switch due to temperature difference at the Curie point (Tc).

C) Cut-off frequency switch: transparency by exceeding the cut-off frequency. D) Magnetoelastic field switch

Fig. 33 b 1):

B-T characteristic = induction-temperature curve

Temperature T _c removes the spin coupling: FM switches from "ferromagnetic" to "paramagnetic" effect by changing the temperature to T _c .

Variable setting also possible (compensator function).

Fig. 33 b 2):

If the Curie temperature is to be switched quickly, this is done electrically with Peltier elements that deliver both heat and cold or through

Laser beams - heat with subsequent cooling and "freezing" another magnetic state.

The FM can be built up using layer technology with integrated Peltier elements.

The layers are very thin so that you can quickly switch between the ferro-para-ferro state. Switching temperature Tc ~ 30 ° C. The saturation induction with these materials is not very high (B _& 0.5 T).

Fig. 33 b 3):

-F = attraction of the ferromagnetic piston at FM-Tc "Auf. With this construction it can be a repulsive antiparallel

Counter magnets can be dispensed with (weight saving).

Fig. 33 c):

FM control by frequency greater than the cutoff frequency of the substance → change in permeability. The FM is switched according to the motor cycle:

1. With OT = "On" → FM paramagnetic → transparent for PM field due to higher frequency than the limit frequency of the now dynamic (unsteady) PM constant field.

The permeability of all magnetic materials shows a clear drop → cutoff frequency above a certain frequency. Root cause:

Eddy currents and spin relaxation.

2. With UT = "Off" → FM ferromagnetic → blocked. PM piston can move back towards TDC when in equilibrium. PM permanent magnet

FM field modulator FM frequency modulator

With these FM versions, energy consumption is particularly important, since the FM is permanently between the anti-parallel PM's in its

Effect is switched on and off. Geometry and shape of the FM housing

The principles as already described for kinematic FM (open / closed shielding geometry) can also be applied here. The shielding effect = repulsive effect in the case of alternating fields (increase in the shielding factor due to induced eddy currents) must be observed.

Ferro- / ferrimagnetic materials can also be used here, depending on the desired effect. The individual possibilities for flow control in the FM layer according to

Systematics are now explained according to the invention:

1. Permeability-flux density-FM

The shading takes place by longitudinal displacement of the PM's u Δs ZUF plane of symmetry of the F with the same ^" lowering of the ^" local ^~ effective flux density (strong decrease in the permeability-induction curve with increasing distance Δs from the magnetic surface).

This shifts the point of action on the permeability-induction characteristic and the stationary FM switches between "closed" at Δs = 0 and "open at Δs - Δs, which greatly changes the permeability

(FM: non-transparent → transparent) (Fig. 34).

Δs → -ΔB: Bmax ^→ B _op t → B _max , or B _op t - → B _min - → B _opt , depending on the direction on the permeability-flux density characteristic.

2. ThermoMag-FM

- Utilization of the strongly non-linear induction-temperature curve

- Switch the FM lock. Principle ferro- / ferrimagnetic / -electrical: 1. OPEN: by heating up close or above the Curie or Neel temperature (= paramagnetic »transparent = OPEN) 2. Neutralization (μ _{r *} 1) or magnetic reversal under effect a - constant pre-magnetic field or - due to pulse magnetization, note pulse permeability 3. CLOSE: "freezing" the magnetized state → direction of magnetization = attractive to magnet; by cooling under Tc or TN = ferro ~ / ferrimagnetic = * "CLOSE" → non-linear FM switch.

3. Anisotropy FM

1. Crystal orientation / grain orientation switch: transverse or longitudinal crystal / grain orientation = flux orientation = magnetic preferred direction switchable

2. Villar effect: change the permeability due to mechanical stress (reverse magnetostriction). 3. Magnetic preload: Introduce stress anisotropy through static / dynamic tensile stress → magnetic preferential direction parallel to the tensile stress in the FM sheet. The tensile stress in the FM can be achieved by prestressing, for example by magnetic field tempering.

4. Soft magnetic induction FM

Utilization of high modulation: lowering of the master factor (instead of screen factor) in FM with a steep drop in the permeability-induction curve when the material saturates, or when BH → O, ie μ _max → μ _\ .

There is no mechanical displacement of the PM's by Δs, but one

- Pulse magnetization for high modulation B _max (optimal: bistable magnetic field switch), note pulse permeability a) Structure (e.g. coil) with pulse magnetization: Unipolar (one-sided) pulse magnetization with field strength stroke Δfi and induction stroke Δ B (magnetization current only flows in one direction in one compared to the period very short time span = pulse duration). b) Pulse wire: FM structure (eg integrated or external coil) with pulse wire - magnetization is carried out by a single jump (Z-loop), which results in a high voltage pulse. c) Generation of high-energy current pulses: - Pulse compression technology using magnetic switches - Rectangular loop material, preferably amorphous metals due to low dynamic magnetization losses d) Conventional high field coil

5. Hard magnetic induction FM

- Hard magnetic material has unmagnetized permeability μ _t »1 (!) = Transparent = FM" OPEN ". Magnetized 2 antiparallel arranged magnetized FM plates in the plane of symmetry of the FKG each create an attractive opposing field to create the equilibrium with the repelling magnet → FM = CLOSED.

- pulse magnetization a) Structure (eg coil) with pulse magnetization Unipolar (one-sided) pulse magnetization with field strength stroke ΔÖ and induction stroke Δ B (magnetization current only flows in one direction in a very short period of time compared to the period = pulse duration). b) Pulse wire FM structure (eg integrated or external coil) with pulse wire - magnetic reversal takes place through a single jump (Z loop), which results in a high voltage pulse. c) Generation of high-energy current pulses - pulse compression technology using magnetic switches - fabric with a rectangular loop, preferably amorphous metals because of low dynamic magnetization losses

6. Induction current FM

Induction of a current / current pulse in a conductive part → eddy current → 1. repulsion when switching on 2. attraction when switching off The current flow in the rings must be oriented in such a way that the field effect has an attractive effect on the PM's when closed. 7. Cut-off frequency FM

When the limit frequency is exceeded, the permeability drops suddenly. Note the design information on cut-off frequency for "alternating fields".

Periodic processes - eddy currents (eddy current cut-off frequency)

- Spin relaxation (gyromagnetic cut-off frequency, cause: damping of the electron spin, note asymmetrical damping)

On-off processes - eddy current time constant (how quickly does induction or flow (assuming constant permeability) penetrate into the sheet after applying the field (current pulse)?

8. Spin resonance FM FM switching process: spin moments in the direction of the field / field lines

Change (UP) or perpendicular to the river (CLOSE).

- Superimposition by strong external constant field: → ferro- / ferrimagnetic resonance

- Spin resonance FM = spin direction switch: spins flip (→ spin waves) spin resonance (precession frequency of the spins matches the external alternating spring) → losses increase sharply due to energy absorption 9. ParaFerro / Ferri FBfl

The ferro-Zferrimagnetic atoms alone are paramagnetic. Only from a layer of approx. 6 atomic layers does the exchange interaction = superposition of the uncompensated inner electron shells cause ferro / ferrimagnetism as in the solid.

→ Binding = coupling.

A switchable conductive / barrier layer ensures that ferro-magnetic interference = coupling (inner electron shell exchange interaction) is formed or blocked from outside, or that the Lei barrier layer is moved in its position by the crystal or the crystal structure remains paramagnetic.

FM transparent = paramagnetic = no conductivity = no coupling = "OPEN":

- + river quanta cross the barrier layer.

FM non-transparent = ferro- / ferrimagnetic = high conductivity - coupling present = "CLOSE": → flux quanta cannot cross the barrier layer, they are diverted.

In the case of crystalline substances, the spontaneously magnetized domains must be activated by active barrier layers - amorphous substances have no crystal grains but domains, because the barrier layer acts directly on the atomic layers without grain boundaries.

The FM switching processes should be bistable, since external energy can then be saved during the PM movement.

10. M-field semiconductor modulators (→ magnetronics)

11. Tunnel FM

Magnetic / electrical tunnel effect = field modulators (B / D field) The tunneling of magnetic flux quanta (instead of accelerated electrons) through a very thin magnetic FM barrier / insulation layer "l _m " takes place according to the invention on the basis of a magnetic voltage Θ and energy gap E = 0. The elementary electric charge of the electron e (tunnel current) corresponds to the magnetic flux or current Φ in the case of the magnetic tunnel FM.

Superconductor-insulator-superconductor contact (SIS) SIS contact with magnetic field quanta or electret field quanta and very thin insulating layer "l _m " or "I _e ": → magnetic SMlSwi contact for magnetic flux quanta ΦM.

→ electrical SelS _E contact electrical flux quanta ΦE FM switching function analog: a) μ-B function or ε-D function at step temperature Tc b) μ-B function or ε-D function between normal temperature T and T _c Control of the tunnel effect

In this active version of the FM, magnetic fields or electrical ones are used, but not as auxiliary fields to increase the attractive effect or to compensate for negative forces etc., but as a general basic principle for switching the FM: The magnetic field or the applied magnetic voltage controls the transparency of the FM layer for the magnetic flux quanta, analogous to the electric field with electric voltage and electric flux quanta.

There are different variants for producing the switchable tunnel effect. Fabric structure: a) Superconducting fabric of the FM structure (with open geometry) without kinematic movement. b) Thin FM insulator layer Magnetic energy gap and M-type conductor current (flux quanta)

Two magnetically conductive metals are separated from each other by such a thin magnetic insulating layer "l _m " (FM dimagnetic) that the quanta of flux accelerated by the application of a magnetic voltage can tunnel through this magnetic insulating layer. The expected steep rise in the magnetic tunnel current = flux quanta with applied magnetic voltage is found for norma-conducting magnetic conductive metals. If one of the magnetically conductive metals is magnetically superconducting, then a significantly lower magnetic tunnel current = flux quantum current is observed below a voltage Θo, because only the normative portion of the magnetrons (M) is available for the magnetic tunnel current. The value MΘo is the energy due to a magnetron, which is released when the pair of magnetrons = spin moment - coupling) is released. The pair formation energy for the double magnetized (charged) pair of magnetrons, the "energy gap", is ΔE = 2MΘo. (The electron e was replaced by the magnetron M)

The energy gap is temperature dependent.

Magnetic SIS contact

If the two magnetically conductive metals separated by a magnetic insulating layer "l _m " (FM dimagnetic) made of the same magnetically conductive

Superconductors exist, the temperature T is below Tc and the magnetic insulating layer is thin enough (<1 nm), then this is a magnetic S _m l _m S _m contact (superconductor-magnet-insulator-superconductor-magnet), through which magnetic flux-quantum pairs are also created can tunnel through = torque couplings (→ see magnetic surface polarization through

Transfer).

Magnetic direct current effect (MGE)

MGE occurs when a weak direct magnetic current is impressed on the magnetic element (S _m l _m S _m contact). Below a critical magnetic "current strength" (= induced voltage) Φ _c , the magnetic "superconductor current" Φ _s does not generate a magnetic potential difference in the M element, ie magnetic flux pairs = spin moment couplings tunnel without the help of a magnetic field through the magnetic Insulating layer = dimagnetic. Only break above Φ ₀ Flux pair in the magnetic insulating layer to single flux quanta = decoupling of the bond, and there is a magnetic voltage drop. The magnetic tunnel current of flux quantum pairs through the SmlmSm contact is strongly dependent on the magnetic field: Because the field does not pass through the S _m layer, it can be assumed that the B lies in the Im insulating layer. Whenever the magnetic flux Φ _m through the magnetic insulating layer is an integral multiple of the magnetic flux quantum, the magnetic tunnel current of the flux quanta goes through zero. Magnetic alternating current effect (MWE) MWE as a result of a quantum mechanical interference shows that the ^{~ "} application of a magnetic direct voltage Θ ₈ to the S _m l _m S _m contact to a high frequency magnetic alternating current (of flux quanta) dieser _s = proportional to this magnetic voltage Φ _s , max sin (2π ft) with f = (2M / h) Θ _s . The effect also works the other way round: If a high-frequency alternating magnetic current Φ of frequency f is impressed on the S _m l _m S _m contact, then the Θ (Φ _m ) characteristic step of constant magnetic voltage of size nΘ _s (n = integer).

12. Supraleϊter-FM Magnetic / electrical supra-field modulators (B- / D-field) S _m lmS _m -contact with magnets or electrets and thick I-layer: → magnetic S _m l _m Sm-contact for magnetic flux quanta. _M. → electrical S _e l _e S _e contact for electrical flux quanta Φ _e . - Supra-conductor (S-conductor) - Supra-non-conductor (S-insulator) - Supra-semiconductor (S-semiconductor) (with "bound" electron pairs, electron-hole pairs) FM switching function analog: a) μ -B function or ε-D function at step temperature Tc b) μ-B function or ε-D function at between normal temperature T and Tc 13. Temperature compensation / balance control The soft magnetic material and its magnetization curve with the working point A _{3 of} the FM with magnetization factor N = 1 at - (BH) _ma χ, as well as the hard magnetic material with its demagnetization curve with the operating point of the PM with demagnetization factor N = 1 at + (BH) _m ax. are subject to the induction temperature function, see BT curve: the curve (magnetization / demagnetization) and the associated field force changes with the temperature, so that: a) temperature compensation / control of the machine, and / or b) Temperature compensation of permanent magnets c) a stroke variation with Δh is necessary to control the state of equilibrium when the temperature changes (change in field force = change in state of equilibrium) to be able to keep the operating values and function constant. Furthermore, this variation Δh can be used to use Δs to control the flux density B in the permeability-flux density FM: "OPEN" = B _max with _r * 1 → B _0P t at μ _max = "CLOSE", or "CLOSE""= B _op , with μ _max → BH = 0 with _w =" OPEN "

4. Anti-eddy current principles

4.1 Eddy currents in the FM and shielding housing

Eddy currents only occur if there are conduction electrons in the material, i.e. if the spec. el. resistance is small; e.g. it is high for ferrites, which is why practically no vortex currents can be generated in ferrites.

Eddy currents arise especially in electrically conductive massive metals through an alternating magnetic field a) the PM's approach the closed FM → Lenz rule from UT → OT), or b) by moving a metal in a magnetic field: the FM moves transversely in the state of equilibrium PM's - with field effects neutralizing each other in the plane of symmetry of the PM's PM-FM-PM - the FM moves transversely either parallel or perpendicular to the field lines.

Moving the FM disk transversely in the field of the PM's, or in the case of a stationary FM the movement of the PM's relative to the stationary FM, induces a voltage in the FM which causes a large current (short-circuit current) in the FM, because with an FM disk in one Piece (solid) looks like a self-contained conductor loop.

4.2 Mechanical anti-eddy current principles

In order to effectively reduce the eddy current in the FM, slots are made in the FM disc perpendicular to the FM movement, i.e. perpendicular to the eddy current. To ensure that the B field does not penetrate, the FM disc is made up of soft magnetic layers (lamella sheets) that are arranged parallel to the FM movement and slit with an offset. To establish the balance between the attracting FM layers with the repulsive PM's, the soft magnetic layers with different permeability can be optimized so that the FM thickness s is minimized (thin FM layer).

This creates a spatial matrix of sheet metal (layers = lamellas) electrically insulated in the FM plane from various soft-magically graded materials: longitudinally mutually electrically isolated layers.

Option: longitudinal air gap between each layer due to the multiplication of the shielding effect of the individual shields / individual layers.

The slots or separating layers in the laminations interrupt the path of the eddy currents, which therefore can hardly be formed. A large cross-section in the FM disc offers only little resistance to the eddy currents. With separation joints (= slits) integrated perpendicular to the FM movement (in the laminated thin, mutually insulated layers), the eddy currents find a high resistance because their current path is often interrupted.

A large number of interruptions increase the effect considerably, the width of the gap must be adapted to the eddy currents to be expected.

4.3 Mechanical anti-eddy current FM structure The slots must be made perpendicular (= longitudinal direction) to the FM movement, within the FM layers (Fig. 35).

Dynamic orientation of the parting lines (Fig. 36)

As the PM's not (for a pin) in the catching position, but in repelling position (equipolar = antiparallel!) Are ^"arranged are the

Field lines, if they cannot be homogenized, are strongly inhomogeneously curved. For this reason, the direction of the separations in the lamination can be dynamically adapted to the field line vectors, which change dynamically during the PM movement, for the optimum FM effect.

Orientation in the preferred magnetic direction A solution is technically simpler, in which the longitudinal slots are fixed vertically in the layers of the laminating sheets, unchangeable and the preferred direction of the PM magnetization is observed (flux between the poles of one and the same PM).

In other words, the direction of the slots parallel or perpendicular (equipotential surface) to the field lines, depending on the relative movement of the slots to the field lines, determines the effect according to the invention. Alternative eddy current separation structure a) Dense spherical packing made of soft magnetic domains, embedded in an electrical insulation layer - like a powder metallurgical substance. b) Cubic microstructure, produced by sputtering, vapor deposition, galvanically or mechanically separated by laser beam, etc.

These structures can convert the volume eddy currents in the thick FM disk into particle eddy currents and thus greatly reduce the eddy current repulsion, heating, and losses.

4.4 Shielding effect in double ä U__I _: _ „. S .... nU9 illlllI "V7CIIOU36

If the FKM is operated at high frequency, e.g. In addition, an electrically highly conductive layer can be used, particularly in the case of the two-room shielding housings.

Eddy currents arise in this shield, the magnetic field of which is always opposite to the alternating field to be shielded. Therefore, no interference field (EMC) can penetrate to the outside through the shielding plate, nor can a magnetic alternating field influence the coil / system inside from the outside. 4.5 Electric anti-eddy current principles

4.5.1 Goal

The electrical anti-eddy current principle starts with the eddy currents, i.e. on the free negative charges in the metallic conductor, i.e. the line electrons. These principles can be applied in addition to the mechanical principles.

4.5.2 Electrical anti-eddy current construction 4.5.2.1 Kinematic FM Two forces have to be eliminated in the kinematic FM: a) longitudinal forces which arise from the Lenz rule, b) braking transverse forces which arise from the transverse FM oscillation , especially in the TDC position, when the PM's are close together and the FM is opened.

Both forces arise from circular or eddy currents, the cause of which is the movement of the negative electrons in the positive ion lattice. The electrical elimination of the cause = "anti-eddy current" is initially based on the removal of the electrons from the effective area of the permanent magnet fields in the FM.

4.5.2.1.2 Construction of the kinematic FM with electrical anti-eddy current principle (Fig. 37) 1st step: Electrical insulation of the FM

Depending on the type (1 FM, or 2 FM due to the conservation of impulses) to transmit the oscillation, the FM is mechanically fastened with electrically insulating rods. This means that no conduction electrons can flow to the FM. Step 2: Influence through charge separation

- → Reduction of the Lenz force (cause: Lorenz force)

The FM is positioned within an electrical field. The electrical field is generated by a high-voltage source or, if it is sufficient from the level of the voltage, by a permanent field of a ferroelectric substance (electret) for charge separation.

Influence creates a neutral zone in the central area that is free of electrical charges, the conduction electrons (electron gas). This neutral area is penetrated by the magnetic fields of the anti-parallel oriented PM's. Since there are no conduction electrons in this B field, a longitudinal force (attraction / repulsion) according to the Lenz rule can hardly occur, especially when the PMs are oriented in a parallel and not in an antiparallel spin position. Since positive charge means "stationary ion grid without conduction electrons", the PM could also be positioned in the area of the positive charge - there are no eddy currents due to the lack of conduction electrons in this area, because the eddy current is created by the movement of electrons. The conduction electrons sit on the outer surface of the FM or the lamination plates in the negative area.

The size of the amount of electricity affected depends on the strength of the influential field as well as the shape and size of the FM.

Step 3: cargo transfer

According to the invention, it is ensured that the influenced electrons collect in a) a metallic funnel with a tip, so that they are continuously grounded with a knife edge opposite the tip - along the oscillation path of the FM - grounded by contactless transfer with complete charge separation, or in a Leiden bottle as a high-voltage capacitor for energy storage, or in a capacitor - depending on the height of the span. b) If instead of a funnel there is a boundary surface of the FM parallel to the direction of oscillation, then instead of one, many needles or many knives can be used to transfer the charge (parallel connection).

Overall, a positive charge of the FM is achieved, i.e. only the fixed ion grid of the FM with a positive charge is left and generates practically no eddy currents in the B field if the number of conduction electrons is minimized. Depending on the level of the positive potential, a corresponding number of line electrons are transferred (→ efficiency of charge separation).

Furthermore, in case a) the line electrons can hardly generate eddy currents with an induced magnetic field when moving the FM, since they are firstly in a funnel in which the acceleration path is narrowed (without a funnel with a parallel boundary plane, the line electrons can accelerate and decelerate freely in the metal secondly, they are largely removed from the track by means of charge separation.

Step 4: Transverse braking force = acceleration force (Fig. 38) 4.1 As a first step, we can design the inhomogeneous field so that the two force vectors of the Lorentz force on the circular current, i.e. the greater force at the front and the smaller force at the end of the FM are the same → symmetry, i.e. braking and acceleration cancel each other out. This means a field characteristic in the transverse direction = stronger field outside than inside. → FM rotation instead of oscillation due to asymmetrical profile.

4.2 A second step is given by the transversal increase in the material width of the lamella plates separated by the longitudinal column with the rest as webs (to interrupt the current eddy) in the mutually insulated thin lamella plates: this results in a relatively small "web" in the brake section large "eddy current with a relatively small braking force and at the transverse end of the FM (= beginning of the PM field) the relatively large" small "eddy current with a correspondingly large acceleration force, so that both forces - which are now relative smaller braking force with the relatively greater acceleration force - can cancel each other out (symmetry → in balance). Option: → Rotation of the FM instead of oscillation, because of the asymmetrical professional !. 4.3 The web thickness of the lamella sheets can also be designed as a profile in such a way that the eddy currents braking locally in the web at the front edge of the web - due to a wedge profile - are relatively much smaller than the now more strongly accelerating eddy currents at the thicker wedge end of the web because the eddy currents can develop more strongly in voluminously more conductive material. The profile and thus the thickness function regulates the ratio of braking to acceleration force. Option: - → FM rotation instead of oscillation, due to asymmetrical profile. 4.4 ^" Overall, the sheets with the ^" slits are interleaved in such an insulated manner that only small gaps can arise for the B-field of the PM's - unlike the offset solution, in which the FM (because of the offset slots) would be twice as thick , 4.5 Anti-eddy current construction

4.5.1 Anti-Lorentz Principle: Tangential / Radial Force Equilibrium with Rectangular Gradient Conductor Loop In transversely inhomogeneous fields, various forces arise at the front and at the end of the induced eddy current r / r? Rs in an FM conductor when it is moved tangentially and relative to the PM field. Note PMs oriented in anti-parallel: this results in oppositely directed eddy current rings in the FM sheet oriented to the respective PM. In a homogeneous field there is no difference in the forces between the front and the end because the magnetic field has no gradient. In the case of inhomogeneous fields, the field gradient for the structural design for compensation with different conductor cross-sections (webs) and spec. elec. Resistance at the front and end of the FM is decisive. According to the invention, for example on the front of the eddy current ring, a thin slotted sheet with a high spec. elec. Resistance (→ small volume eddy currents) and at the end a thick slotted sheet with low spec. elec. Resistance (→ large volume eddy currents) must be arranged. This construction compensates the braking by the accelerating eddy current component. According to the invention, the construction in relation to the eddy current ring corresponds to a rectangular gradient conductor loop in which the opposite sides (front - end) of this rectangular loop form a pair of current elements with opposite current directions - the eddy currents must be equal when compensating for equilibrium. The different conductor cross sections (front / End) (amount of electrons in volume) and the various spec. Electr. Conductivities should correspond to the tangential field gradient in their compensating current effect, ie the tangential vector potential difference (magnetic voltage Θι ₂ = U _m12 ). In order to maintain this equilibrium condition in the single bridge, it must be constructed as a wedge-shaped single bridge with eddy current / ngp (= toms with two asymmetrical conductor branches: front end) (wedge-shaped single bridge conductor cross-sectional area) so that the braking and accelerating forces are the same in the single bridge lower loop. The effect of the compensation construction is as if the conductor loop were moved in a homogeneous field (without a field gradient): the force effects of the eddy current branches are equally strong - despite the vector potential difference. The construction of the conductor loop with the above anti-eddy current principle can also be applied at an angle 9 to the z axis, for example also in the normal direction; a different vector potential function B _r (&) with a different potential difference (voltage) for the front and end must be taken into account.

4.5.2 Anti-Lenz principle: normal force equilibrium In eddy conductor loops lying one behind the other, induced eddy current rings are created in the same direction of rotation, which can also be compensated. In the conductor loops (FM sheets) arranged one after the other in the normal direction, the direction of the induced eddy currents and their magnetic fields, which counteract the cause of induction, is the same, therefore the following variants according to the invention can be used to compensate them: 1. Oppositely directed currents with positive charge: a) Negative charge carriers in the outer or inner conductor loop and b) positive charge carrier type in the inner or outer conductor loop. The positive currents arise from positive charge or positive charge carriers. Variants with positive charge carriers (→ unipolar currents) 2. Unipolar currents in liquids. a) Colloidal solutions: positive or negative particles. The colloidal particles are either positively or negatively charged; The opposite charges are then in the adjacent water. If a non-conductor (non-electrolyte) is present, the substance with the higher dielectric constant charges positively. b) Repulsive force in the direction of decreasing field strength, particle has smaller dielectric constant than the environment; Particle has lower permittivity than the vacuum. c) Electronic semiconductors can also be used. Nβ conductor loop (negative electron line) and P _e conductor loop (positive hole line) → unipolar semiconductor loops.

Rotating / shifting the electron-conducting conductor loop in the magnetic field costs work; this can be done through the above Principles are compensated simultaneously.

Shielding between negative and positive »loops:

If the mutual influence (interference) of the P _e or N _e conductor loop current - and thus the mutual compensation of the left or right rotating induced eddy current rings - is to be prevented by the oppositely oriented induced magnetic field of the other conductor current (note mutual Distance of the conductor paths Br («) of the conductor loop), a magnetic shield (magnetic insulation = dimagnetic) can be used between the negative and positive conductor loops, so that only the compensation effect, relative to the inducing primary magnetic field, which determines the direction of the induced currents and Lenz forces generated, comes into effect. This construction induces currents in the P _e and Ne conductor loops (which is desirable with a generator / motor), but the normal Lenz forces from the conductors to the PM are compensated, because in this case the direction PM becomes Conductor needed for induction and direction of electricity transport. Directional shielding:

Direction-dependent shielding can also be used in the event that only the field direction PM → conductor loops, but not the reverse field direction conductor loops → PM, is desired for induction and current transport, because these generate the bilge forces.

Solutions according to the invention 1. Self-compensation of parallel conductors Linear conductor section (bridge in the field modulator) The mechanical movement of a linear conductor section, perpendicular to its length, with the speed v leads to a force F _q on the charge carriers, which is synonymous with the occurrence of an induced electric field strength E damn.

There are two different effects of the Lorentz force on conduction electrons:

In the case of rectified currents in conductors, the field between the conductors is weakened, so that the reaction of the induced magnetic field to the primary magnetic field is neutralized in accordance with the conductivity and cross section of the conductor. The parallel conductors can be designed as a conductor loop: a) current return branch outside the primary magnetic field, or b) shielding of the induced magnetic field of the current return branch inside the primary field region, for example with soft ferrites.

2. Negative and positive conductor loops (L) Compensation of negative swirl field with positive swirl field in relation to the PM field. 3. Magnetic deflection ring (A) between the conductor loops (L) Mutual influence: Note the distance between the loop loops. Note constructive determination of the a) demagnetization factor (length to width = shape anisotropy) and / or b) the crystal anisotropy and other anisotropies in the shielding layer in order to direct or block the flow (→ construction see isotropic / anisotopic FM and - PS). 4. Magnetic direction-dependent shielding (A) / translucency between the conductor loops and the PM a) Magnetic field semiconductor diode layer between PM and negative (N _e ) and / or positive (P _θ ) conductor loop. Flow quanta only from PM towards conductor loops → induced fields in L do not affect the PM. (→ Magnetronics and) b) Magnetic mirror with periodic magnetic refractive index modulation between PM and L. c) Magnetic resonator (magnetic interferometer) with magnetically coherent flow between PM and L (the magnetic mirror surfaces must match the curvature of the magnetic field, ie the curved wavefronts of the magnetic beam B _r (.9) must be exactly matched).

5. Magnetic compensation a) At speed v of the conductor loop, direction away from the magnetic pole → magn. Attraction between L and PM. - Compensation through magnetically positive energy / capacity (diamagnetic) → repulsion. Note the difference: Magnetic (= magnetic conductor) eliminates the attraction, dimagnetic (magnetic non-conductor = insulator) does not, diamagnetic causes repulsion. - Compensation through repulsive "anti-field". b) At speed v of the conductor loop towards the magnetic pole → magn. Repulsion between L and PM. - Compensation through magnetic negative energy / capacity (dimagnetic) → attraction. - Compensation through attractive "anti-field". The work can also be compensated one after the other (serially) by only one type of conductor being active and moving - the sum of the work W _N + Wp is zero. The construction of electrical generators and

Motors with higher efficiency possible.

Conductor grinding anti-bilge principle

FM sheet as a conductor loop: With a e.g. Rectangular closed conductor loop, which is parallel to the B-field (α = 90 °), would result in the induction voltage erten E-fields when integrating via the loop with a linear movement of the loop perpendicular to a homogeneous B-field. If the loop remains stationary in its position, e.g. at angle α = 90 ° or

45 °, is therefore not rotated, and the magnet with its inhomogeneous field moves relative to the conductor loop, the following effect occurs: A ring voltage is induced with an eddy current ring in the loop due to the temporally changing and inhomogeneous B field, which again an instinctively inhomogeneous on the branches of the loop with different B-amount Magnetic field generated with a magnetic moment.

Eddy current ring with compensation of the forces at the front and end of the conductor loop

Current-carrying conductor in the magnetic field: The direction of B is the direction of the magnetic flux. If the magnetic field lines are inclined at an angle α to the surface normal, only the flux density perpendicular to the surface B cos α is decisive.

The force F on a current-carrying conductor of length I in a magnetic field B acts perpendicular to the surface that is spanned by the vectors I and B.

The Lorentz force is maximum when v and B are perpendicular to each other and zero when the charge carriers move in the direction of the magnetic field. In the case of a conductor loop at an angle α = 0 °, the result is that the opposing forces act in the opposite direction radially outwards (= repulsion with reinforcement of the field within the conductor loop); at an angle of the conductor loop at α = 45 °, the force vectors are directed in the opposite direction at α = 45 °. The field lines of the current-carrying conductor, which run in the mathematically negative sense, overlap with the field lines of the magnet running from the north to the south pole.

In this case, the resulting field has a field line ver // c /? Insert on the left and a field line / erαϊ / n / wng / on the right. A force acts on the conductor in the direction of the dilution (to the right) (Lorentz force). With field lines circulating in a positive sense, the field thinning occurs on the left side; in this case the Lorentz force acts to the left.

The induced current flow in the conductor loop (eddy current ring) creates a magnetic north and south pole, the pole strength Φ of which is maximum at an angle α = 0 ° when the conductor loop is at B and zero at α = 90 °. The front and end branches of the conductor loop at α = 45 ° can have a cross-sectional area and / or specific: electr. Resistance can be varied so that the opposing forces of the front / end branches compensate.

Due to the conductor loop position at α = 45 °, a vortex current ring component with current transport I and sense of rotation is also generated parallel to the B field. The components of the Lorentz forces on the branches of this eddy current ring which is inclined to B lie at the respective potential level and can be modified using the compensation principles of changing the FronWEnd conductor cross-section (more electrons → larger current) and / or the spec. elec. Conductivity and / or bring about the equilibrium with an adjustable voltage / current valve, so that Fι-F ₂ = 0 in the normal direction.

At speed v of the conductor loop in the direction of the magnetic north pole (normal direction), or magnet with v direction in the conductor loop, lies in the

Section plane to the conductor loop, the front force component F ₂ braking in the tangential direction at potential level B ₂ and the accelerating final force component Fi at potential level Bi. The conductor loop can preferably be composed of many parallel individual

Conductor loops exist at an angle to the B field (α = 45 °).

Consequence: No Lenz forces in the normal direction despite Lorentz forces. Due to the compensation construction of the conductor loop branches, these are quasi interaction-free eddy current rings.

You can go even further and amplify the accelerating force Fi at the end of the eddy current ring in the inhomogeneous field so that it is greater than the braking force F ₂ at the front of the eddy current.

Generalization of the principles

According to the invention, these aforementioned principles can be applied analogously to all fields that are inhomogeneous in the transverse and normal directions. We generally refer to a potential field as an X field and a vortex field as a Z field (Z = circulation) because the laws of the Potential theory and vortex theory can be applied analogously to all concrete field types.

Formation of a vortex field An inhomogeneous field (e.g. flow or magnetic field etc.) always contains vortices, because the rotation begins where the potential (e.g. velocity potential v or magnetic potential B _r («), etc.) changes transversely to its own direction , So for: cross-force profile or cross-magnetic field profile or cross-speed profile, or generalized cross-X or

Z-field profile; its gradient determines the force required to move it. A transverse profile is also available for a vortex field (e.g. radial speed or force change, see Lorentz force, Coriolis force, etc.)

Friction always occurs at a boundary layer, even with an electrical or magnetic etc. field. Consequence: formation of vortices by electromagnetic friction on the atoms, ions, molecules, with the consequence of an X or Z profile.

Eddy current ring, circulation concept, magnetic vortex field

Around a magn. Vortex field (eddy current ring I) drives the PM-Feid flow / field flow Φ (the flux quanta Φo) the circulation constantly. For such a path, the circulation is Z = v-ds ≠ 0. Different on a closed path that does not enclose the vortex. There is a potential field or potential flow there, i.e. in such a way, Z = 0. A circular path around a rotationally symmetrical vortex gives Z = 2πrv. The meaning of the concept of circulation lies mainly in the fact that it

Forces gwerzur describes the flow / field direction, which result in the dynamic buoyancy.

For example the field strength (E, D, H, B) alternatively described as acceleration (such as the gravitational field strength g) and the

These electromagnetic fields flow at the speed of light or phase speed or group speed. The buoyancy force FA counteracts the circulation in the same direction

Lorentz force F.

See flow around a rotating electrically conductive cylinder with magnetic vortex field around an electric eddy current ring with magn. Magnus Effect. Potential theory and vortex theory can be applied analogously to all concrete field types.

Creation of a vortex field An inhomogeneous field (e.g. flow or magnetic field etc.) always contains vortices, because the rotation begins where the potential (e.g. velocity potential v or magnetic potential B _r (3), etc.) is transverse to its own direction changes. So for: cross-force profile or cross-magnetic field profile or cross-speed profile, or generalized cross-X or

Z-field profile; its gradient determines the force required to move it. A transverse profile is also available for a vortex field (e.g. radial speed or force change _* see Lorentz force, Coriolis force, etc.)

Friction always occurs at a boundary layer, even with an electrical or magnetic etc. field. Consequence: formation of vortices by electromagnetic friction on the atoms, ions, molecules, with the consequence of an X or Z professional.

Eddy current ring, circulation concept, magnetic vortex field

Around a magn. Vortex field (eddy current ring I) drives the PM field flow / field flow Φ (the flux quanta Φo) the circulation constantly. For such a path, the circulation is Z-§ v ds ≠ O. Different on a closed path that does not enclose the vortex. There is a potential field or potential flow there, i.e. in such a way, Z = 0. A circular path around a rotationally symmetrical vortex gives Z = 2τrrv. The meaning of the concept of circulation lies mainly in the fact that it

Describes forces transverse to the flow / field direction that result in dynamic lift.

For example the field strength (E, D, H, B) alternatively described as acceleration (such as the gravitational field strength g) and the

These electromagnetic fields flow at the speed of light or phase speed or group speed. The buoyancy force FA counteracts the circulation in the same direction

Lorentz force FL.

See flow around a rotating electrically conductive cylinder with magnetic vortex field around an electric eddy current ring with magn. Magnus Effect. Laminar homogeneous - turbulent / inhomogeneous field flow / field flow Φ Definition of forces: frictional resistance F _R pressure resistance FD total resistance FW ^S F + FD F _w increases quadratically with the field flow velocity / field flow velocity. After a certain "run length" along an electromagnetic body, the field boundary layer becomes turbulent. The point of change depends on the shape of the front edge of the body, but also on the roughness of the surface. ^" Field streamline body The geometry of a field streamline body has the peculiarity that the pressure drop along the field body takes place so slowly that no field vortices can occur. → Formation of an electromagnetic field streamline body. Note boundary layer D, within which the field Flow velocity increases from v = 0 to the full value. A laminar boundary layer first forms in the front part of the field streamlined body. In this area the flow quanta are accelerated. With further field flow along the FKM field body, the field Flow pressure, so that due to the now beginning deceleration of the flowing river quanta, a field vortex formation begins. A laminar boundary layer creates a turbulent field flow (laminar lower layer, turbulent upper layer). Force on the field body flowed by field flow (conductor with vortex field) Occurs in the field flow around bodies on de If the convex side has higher field flow velocities than on the opposite concave side, this has the result (analogous to Bernoulli's equation) that a field negative pressure area is created on the convex side and a field positive pressure area is created on the concave side. For this reason, a dynamic force FA acts transversely to the field flow direction and in the direction of the convex side, which is formulated analogously to the pressure force FD. This force FA (direction of the convex side) is opposed to the Lorentz force F (direction of the concave side) if the direction of circulation of the field flow is oriented in the same sense as the direction of circulation of the magnetic field: On the convex side we get: + F _A , → → p On the concave side we get: -FA, ^ → ^ V → p FA can be used to compensate for F _L. The repelling Lenz force of the magnetic field induced in the conductor can also be exerted on the inducing one by a circulation of the field flow opposing the magnetic induction circulation Magnetic field of the PM can be compensated; in this case the convex side of the field body points towards the Lorentz force. The force acts in the direction of the negative pressure area (field thinning) = higher flow speed; the overpressure area is opposite. Note profile (field flow body with F _A = 0, "buoyancy" body with F _A ≠ 0). "Buoyancy" force F _A and resistance force F _w add up vectorially the resulting force F ₀ = F _A + FW- The direction of "circulation" of the field flow is determined by the direction of the convex side to the magnetic field flux Φ. "Electromagnetic wing" The elongated teardrop shape of the field-body profile ("wing") greatly reduces the field inflow resistance ^ At the same time, however, the curvature of the field body with the sharp rear edge hinders the field vortex of the pair of field vortexes running "to the left" considerably more than the other and compels him to tear it down. The right field vortex gets stuck and overlaps the incoming potential flow. Exactly the same effect occurs in other inhomogeneous potential and vortex fields.

Step 5: increase electrical resistance

In operation, the FM becomes warmer, so that the spec. elec. Resistance in FM metal increased (vice versa in FM-M semiconductors)

→ smaller eddy currents → smaller Lorentz forces.

options

The other effects, such as magnetoresistance, pressure dependency of the resistance and electrical thermal conductivity can be combined sensibly - if possible, always in the principle of equilibrium compensation.

4.5.2.2 Stationary FM

All steps 1.-4.4 (but without 4.1-4.3) and 5. apply to the stationary FM. Only the longitudinal Lorentz forces that arise with the Lenz rule are to be minimized / eliminated; Tangential Lorentz braking and acceleration forces do not occur due to the missing transverse movement of the FM. The acceleration / deceleration of the electrons when the stationary FM oscillates is also eliminated. In the case of the magnetic M-semiconductor, the opposite temperature-dependent resistance must be taken into account.

4.5.2.3 Construction of the kinematic FM with magnetic anti-eddy current principle (Fig. 39)

→ Charge shift through induction: The existence of an induction field strength along a moving conductor section, which is not part of a circuit, leads to charge shifts (influence) up to the compensation of the inductor field strength. In a piece of metal, this results in an "excess of electrons" on one side and a "lack of electrons" on the other. → Induction field strength along the moving FM → Transversal! nfluenz. The electrical (cause E-field) and magnetic influence (cause induction) can be combined if the poles are oriented correctly and the direction of movement of the FM so that the effects add up in a vectorial manner. Kinematic FM: Influence due to induction strength along a moving conductor

= FM.

With FM oscillation, the influence is reversed if the direction of movement is reversed; with circular motion of the FM at speed v, the same direction is always present in which the B field is cut.

- PM magnetic field from front to back with parallel oriented spin moment of the PM's.

- With antiparallel spin moments of the PM's, the B field neutralizes itself in the plane of symmetry; on the FM surfaces facing PM is the charge reversely influenced (different direction B field)?

- With correct orientation, E-Influence is complemented by B-Influence; the electrons or the charges must be on the same side

Kinematic FM: Influence due to induction strength along a moving conductor = FM. With FM oscillation, the inflation reverses when the

Direction of movement reverses; with circular motion of the FM at speed v, the same direction is always present in which the B field is cut.

- PM magnetic field from front to back with parallel oriented spin moment of the PM's.

- With antiparallel spin moments of the PM's, the B field neutralizes itself in the plane of symmetry; on the FM surfaces facing PM, the charge is reversely influenced (different in the direction of the B field).

- With correct orientation, E-Influence is complemented by B-Influence; the electrons or the charges must be on the same side

4.5.2.4 Combined Electrical and Magnetic Anti-Lorentz Force Principles

There are two principles: a) Magnetic and electrical influence oriented in the same direction (Fig. 40). 1. The magnetostatic field drives the charge with the force F _q generated by the induction voltage Ejnd when the conductor moves to the right and to the center (see reverse flow direction of the B field of the respective magnetic poles) if it is not prevented by sheet metal insulation. 2. The electrostatic field also drives the electrons to the center (see arrangement of the E-plus poles), so that they concentrate on the right at the E-minus pole (if they are not prevented by the longitudinal laminated sheet separation with an insulation layer), then the charge transfer in in the middle. The B field can flow transversely, perpendicular to the FM movement, and also transversely, horizontally = parallel to the FM movement, due to overlapped flow transitions between the webs. b) Crossed electrical and magnetic influence (Fig. 41). 1. The electrostatic Fe \ d drives the charge down before the conductor moves and outside the B field in the web; the webs are separated by slots (power interruption) - there is an influence and a neutral zone. 2. The B field can therefore - when the conductor moves - the e-charge with the force F _q generated by the induction voltage E _ir , d no longer towards the center (see reverse flow direction of the B field of the respective magnetic poles) and not after drive to the right if, apart from the neutral zone (generated by the E field), the charge carriers are prevented from doing so by a longitudinal separation of the lamella plates with an insulation layer (FIG. 42). The charge is then separated at the bottom of the E positive pole. Variant a: Flow of the electrons to the right to the E-positive pole is not possible due to the isolating separating layers, i.e. movement of the electrons to the right is prevented, so that the Lorentz force F _q , due to the lack of electron emission in the conductor, moves to the right (movement of the electrons in the conductor not possible because the load was removed from this area beforehand). However, F _q is locally present in the isolated lamella sheets when the electrons are still there.

Variant b: If electrons are still present, they can only drift to the right with F _q (induced influenza) if a through-connection in the sense of a conductor of length I has been made. These could then be removed in the middle of the FM by a charge transfer (FM is positively charged).

The B field can flow transversely, perpendicular to the FM movement, and also transversely, horizontally = parallel to the FM movement, due to overlapped flow transitions between the webs. All principles can also be implemented constructively with the PM's longitundinal direction of movement when Lorentz forces occur.

4.5.2.5 Summary

4.5.2.5.1 Forces with moving magnets and stationary FM magnetic field not constant over time (unsteady), position of the FM stationary.

FM ■ "Open at OT:

If the PM's move away from the open FM, no Lorentz forces can arise. FM a ^» zu" at UT:

When the PM's approach the closed FM (→ equilibrium state), repulsive forces arise due to the eddy currents induced in the PM-near FM front surface; in the plane of symmetry of the FM they are zero, since the currents through the antiparallel PM's neutralize each other. FM = "closed" for OT:

If the PM's move away from the closed FM, attractive forces arise in the front surface of the FM. If the machine only needs to be braked, the FM is closed when the PMs of OT- + UT move.

4.5.2.5.2 Forces with moving FM (moving conductor)

PM's in OT, FM opens or closes → movement of the FM with its conductors. Magnetic field constant over time (stationary), position of the FM unsteady.

B-field, conductor in FM and conductor / FM movement are three mutually perpendicular variables.

Movement of the conduction electron with charge q either electrical, caused by an E-field, along the conductor or mechanically displaceable by its parallel.

1. Force Fi on a current-carrying conductor

The (electrical) movement with charge transport speed v _q in field B leads to a (mechanical) force Fi in the transverse direction on the conductor.

2. Force F _q on conduction electrons

The mechanical movement of the conductor, perpendicular to its length, at the speed V | leads to a force F _q on the charge carriers, which is equivalent to an induced electric field strength EM: F _q ~ q Ejπ (- Lorentz force on conduction electrons)

The induction field strength along the moving conductor section, which is not part of a circuit, leads to a charge shift (influence) up to the compensation of the induction field strength. In the FM conductor, this results in an "electron excess" (= electron accumulation) on one side and an "electron deficiency" on the other side = influenza.

The influenced charge is understood as charge separation and transferred in a superimposed influential E field by means of a tip; the leader should be positively charged.

5. FM layer structure / lamination FM structure

In contrast to the PS structure, the FM sheet creates the transverse conductive flow between the poles of the anti-parallel PMs. The transversal, thin (against eddy currents) FM sheets additionally (along with the thin sheet thickness and, if necessary, correction / crystal orientation, shape anisotropy) have a longitudinal anti-eddy current structure (gaps in the sheet metal lamellae).

FM for passive kinematic use (transverse movement)

The sheet metal combs (with gaps), which are layered alternately in the transverse direction, are functionally relevant. Ie the metal combs covering one another and in the projection the anti-eddy current columns, which in turn are vertical to the sheet metal plane, that is to say have an anti-eddy current column structure in the longitudinal direction, to be determined constructively.

The column structure in the sheet metal combs lying one above the other must be shifted in the next sheet metal layer above it in such a way that no magnetic flux, without covering (shielding) the column of the sheet metal combs below, can traverse the FM longitudinally directly: the overlap length for transverse flow must be considered constructively.

For optimal shielding, it may be necessary to demagnetize the FM material at the place of use (in situ) by means of an alternating field of decreasing amplitude (when the FM is in the open position). Lamination of the FM disc

Layering (Fig. 43)

Sheet metal slats offset one above the other, gaps must be covered. Note length of overlap with transverse flow. Tapes and thicknesses below 0.05 mm can be processed into film packages. Thereafter, molded parts can be cut by spark erosion.

- Mechanical-electrical suppression of eddy currents

- Arrange slat surfaces perpendicular to the eddy currents

- insulating electrical oxide layer between the fins

- Flat ground end faces, small air gaps between the sheets - Much lower magnetic resistance due to alternately layered FM sheets (large surface contact, shear: air gap between two FM sheet levels). Minimum spacing of the layering: a) = thickness of the insulation layer, b) separation layer in the longitudinal direction due to multiple shielding (the individual shields multiply) Note the overlap length when layering

- From a certain air gap length, the magnetically effective gap is smaller than the geometric one (flow not between the ground end faces of the central webs, but via a parallel path through the air)

- The shape of the sheet determines the magnetization characteristic, for alloys with a preferred magnetic direction special shapes or layers are required (U and ED sheets with a broadened base)

- Use magnetic refraction of the field lines at interfaces (magnetic refractive index)

- note inclined shear of the hysteresis

PS structure

In the pole pieces, the sheet metal orientations are exclusively parallel to the longitudinal direction, that is to say parallel to the flow to be bridged in the air gap and thus perpendicular to the eddy currents; the PS only cover the pole-to-pole connection between the different, anti-parallel, repulsive PM's. For the pole pieces, the crystal isotropy / grain orientation and the magnetic very shape anisotropy are functionally relevant. 6. Transverse force compensation

Goal: FM / PS work compensation in equilibrium at OT. Transversal work compensation 7 isr.hΩn negative work in the PM field plus positive work in the compensator field -ΣW _f → O → | -W _t (PM) | + | + W _t ( _K ) | → O → μ _m - + ∞ at OT Ferromagnetic material is drawn transversely into the magnetic field (PM's).

The work is negative = loss (-W _teu ) when it is pulled out of the PM field (FM = opening in bar 1). The case of FM "closing" in the PM near field at OT does not occur. The work is positive (+ W _down ) when the FM is pulled into the field (FM = closing in bar 3). This strong one

Kc pensations case does not occur at OT because the closing process in

3rd cycle only takes place with a very small transverse force field (the PM's are to the FM in the far field with stroke distance h / 2). - - - -

Together = FM opening in the PM field + FM compensation in the compensator field - in the PM's + K system unit - the movement-dependent partial work compensates itself if a balance is struck between the two parts. -W _{t (P} M) + Wt (K) → 0, therefore r \ _m → °° at OT

This is only possible if a transversal equilibrium is established in the 1st bar and no transverse negative work in the FM shooting process is necessary in the 3rd bar. Since the force field of the PM's in the 3rd cycle with respect to FM is a far field, positive work is gained during the closing process, which, due to its small size, can hardly be used to compensate for the negative work when opening the FM in the 1st cycle; however, it is formally taken into account.

General force components on FM / PS movement 1. Goal: 1. Magnetic force (transverse attraction FM / PS by PM)

2. Goal: Reduction / compensation optfm eπ / πg: [2. Electrical force (Lorentz force, braking effect), compensation by anti-eddy current systemJ [λ gravitational force (mass ^■ acceleration), compensation by counterweight acceleration] [4. Mechanical force (friction), reduction by magnet air bearing, viscosity is decisive] [5. Thermo-Kraft] 1. Variant A: Stationary active compensation of -F _t (s) = -W _t

Coil with reinforcing core

The following compensation variants can be realized by coils with a reinforcing core. However, the negative work required to operate the coil for generating the excitation field H _{a is} required. Due to the reinforcing effect of the ferro core with high permeability on

Working point A ₃ , the energy consumption - relative to the necessary force compensation compared to the coil without core - is very low. Advantage: K-transverse force-displacement characteristic can be set exactly like the PM-transverse force-displacement characteristic, as well as dynamically controlled in intensity and deactivated in the 3rd cycle. , Longitudinal field coil compensator The compensation can be carried out by two coils in an anti-parallel longitudinal arrangement (because of the symmetrical transverse component F _t (s)) like the working magnets (PM's), the coils being formed by ferro field amplifiers (core). The working point / amplification point with M at A ₃ = B2-H _a2 with the amplitude permeability μamax = tangent point on the magnetization curve must be observed (choice of material with high amplification = working point A ₃ at _a max): The compensation energy expenditure becomes due to this connection very small due to large field gain (Fig. 44). 2. Transversal field coil compensator (Fig. 45) Advantages of a stationary system

The mass of the compensator is not accelerated / decelerated during the working magnet movement → lower magnet piston weight and less loss of kinetic energy.

2. Variant B: Transient-passive compensation of -F _t (s) = -W _t

2.1 Movement of the compensator K in the longitudinal direction (Fig. 46)

Effect of the neutral zone: PM compensator field with a short

Use range in the NZ → K-influence field = K-femfeld effect on FM in

UT.

2.2 U-profile compensator with rotation by α = 90 ° in the 2nd cycle

With this principle, the direction of the field lines of a compensator permanent magnet (KM) is used in time with the direction of the working magnet (AM) (Fig. 47, 48).

In particular, the KM is rotated by α = 90 ° in the 2nd cycle = working stroke, or in the 4th cycle = idle stroke, so that there is a difference in the work when opening the FM (= compensation in the 1st cycle) to closing the FM (= reset FM with little FM work) arises. The rotation of the KM by α = 90 ° does not require a magn. Work when the FM a magn. Has isotropic substance structure (W _rot = 0).

There is little work when rotating the KM if the FM has an anisotropic material structure, since the FM remains in the KM field during the rotation of the KM and is not moved transversely. The FM may have a magnetic preferred direction in the material of the FM = grain orientation or crystal anisotropy.

Note: 1. Field orientation PM perpendicular to the FM movement (1st cycle) 2. Grain orientation of the FM, possibly perpendicular to the FM movement 3. Crystal anisotropy of the FM (eg Fe-cubic body-centered unit cell, or co- hexagonal unit cell with extremely different magnetic preferred direction (parallel to the axis = easy direction, or perpendicular to the axis = difficult direction), or Dy ₂ Feι ₄ B, or spinel structure for ferrites 4. Magnetic field-induced anisotropies (magnetic field tempering) = option for FM Function: 1st cycle: FM opening with compensation of work ∑W _t = - _t ( _PM ) + Wt (KM) = 0. (Fig. 47) 2nd cycle: compensator KM turn by α = 90 °, note FM grain orientation / crystal anisotropy if necessary (Fig. 48) 3rd cycle: FM almost without magn. Work in the PM far field Close -W _t → O 4th cycle: Turn the compensator back α = -90 ° in the starting position as in cycle 1, 1st cycle FM opening (Fig. 47) AM working magnet KM compensating magnet MV magnetic Preferred direction MVI PM field lines AM MVt FM ornate orientation MVT FM crystal anisotropy MVt FM magnetic field-induced anisotropy α rotation / switching angle KM Bern .: FM opening parallel to the direction of the KM field lines with KM basic position α = 0 °. 2nd cycle (work cycle) → compensator rotation α = 90 ° (Fig. 48) → new orientation of the KM field lines → small transverse force effect → difference of the work perpendicular to the parallel FM movement in the KM field Bern, alternatively for shifting the KM for rotation: If the KM is moved outside the FM position, work is created because this process would be equivalent to opening the FM. → KM rotation by α = 90 °: FM does not leave the effective range of the KM field lines → magn. Work with isotropic FM: W _ro ι = 0 3rd cycle FM closing FM closing movement perpendicular to KM field lines (after rotation by α = 90 ° in the 2nd cycle)

2.3 Comment on the stationary / transient compensator Stationary longitudinally oriented PM compensator

With a stationary longitudinally acting PM compensator, the PM compensator remains at OT in the FM plane.

→ With FM "Close" in UT, a longitudinal PM compensator generates a longitudinally repulsive force (NZ stands transversely to it) and transversely attractive force -F _t (s) when the field is not deactivated. → Compensation for OT FM opening and losses for UT FM closing.

Non-stationary, transversely acting PM compensator In the case of non-stationary, transversely acting PM compensator, this is oscillated with the working PMs in the respective magnet position, so that in the 3rd cycle with FM "closing" hardly any transverse and longitudinal loss forces (-F _t ( s) → -W _t or -Fι (s) → -Wι) can act: The compensator foot area on the FM is in the direction of the neutral zone NZ in the longitudinal direction of the PM movement. Therefore: compensator field with a short range and great force (NZ - neutral zone). Disadvantage: Additional magnetic piston mass → higher weight with loss due to additional kinetic energy.

3. Variant C: Bistable magnets (switching cores) Activate / deactivate compensation field by current pulse on magnetic switching core a) semi-hard magnetic materials b) pulse magnetization c) amorphous alloys with a rectangular loop

4. Variant D: Compensation of the pole pieces (PS) in different cycles, 1st cycle: + W _t (PSι, ₂ ) = PS closing is compensated by -W _t (PS _1ι2 ) = PS opening in 3rd cycle → compensation in the cycle without separation near-field-far-field effect as with FM, because the 2 PS are always located on the respective PM (Fig. 49).

The variant with 1 PS in the plane of symmetry and movement with the FM is described below (→ operating principle of pole pieces and field modulator).

5. PS longitudinal force compensation

Construction against excessive attraction of the PS's by PM's. Example with compensation magnet (KM) (Fig. 50): Compensation variants a) Permanent magnet b) Electromagnet with reinforcing core (with additional energy) c) Spring force The compensation force-displacement characteristic must be with the PM

Transverse movement correspond to the PS (functionally adapted compensation field strength).

6. Principles for transverse work compensation 6.1 In the potential field, serial compensation (Fig. 51)

Sequence with FM Translation: Work W = Fs: First + F → + Wn, then -F - → -W-ι ₂ → W-ι = 0 Serial compensation: + Wn in equilibrium with - ι ₂ potential field W path 1 = W Path 2 ΣWι = + Wn-Wι ₂ = 0 serial (ΣW ₁ = + ^ W ₁₁ - ^ W ₁₂ = + W ₁ ) 6.2 Simultaneous compensation o = 45 ° (Fig. 52) + F _t → and-F _t always engaged simultaneously + F _t → + Wn with -F _t → -Wι ₂ → Wι = 0 FM movement with α-45 ° + W ₁₁ in equilibrium with -W ₁₂

ΣWι = + Wn -W ₁ = 0 simultaneously

6.3. On the equipotential surface (Fig. 53)

6.4. In the potential field simultaneous-Kcmpensaticn (Fig. 54) 6.4.1 Mechanical coupling of two parallel FM's Simultaneous FM1-FM ₂ → W ι-WΪ ₂

Serial ΣW1ι = + W1n-W1 ₁₂ -0 ΣW1 ₂ = + W1 ₂₁ -W1 ₂₂ = 0

6.5 On the equipotential surface (Fig. 55) 6.5.1 Mechanical coupling of two parallel FMs

FM movement perpendicular to the field

7. Transversal PM compensation

FM movement parallel to the field lines in the potential field. 7.1. Two FM's in a symmetrical arrangement (Fig. 56)

Possibly. with air gap bridging pole shoes direction y z-axis = longitudinal / normal direction x-axis = transversal / tangential direction 1. equilibrium in z-direction APM working permanent magnets = repulsive + z → + F _z = + Fι FM field modulator = attractive -z - → -F _z = -Fι G equilibrium in z direction - + F | _PM -FIFM 2nd equilibrium in the x-direction FMi field modulator = transverse attracting -x → -Ft _FM i FM ₂ field modulator = transverse attracting + x → + Ft _FM2 KPMi FMrKompensations-PM = repulsive + x → + F «<PMI KPM ₂ FM ₂ compensation PM = repulsive -x → -F _t pwi2 G equilibrium in the x direction FMι = -FtFM ⁺ Ft «PM

conclusion

In the field calculation, all 5 components must be in balance with item FM = "closed". → symmetrical field system (principle of macro superconductor + super transistor) 7.2 An FM with a coupled PS (Fig. 57) FM movement parallel to the PM field. 1. Balance in the z-direction APM working permanent magnet = FM field modulator = G balance in the z-direction = 2. Equilibrium in the x-direction FM field modulator - transversely repelling / attracting ± x - → ± F _X = ± F _t KPM FM compensation PM = repelling + x → Bern .: + F _x component = work gained + Wn - Fx component = work to be compensated - W ₁₂ by + Wι _2KPM . G Equilibrium in the x direction with respect to -Wι ₂ component: The + Wn component can be added to the sum Σ-Wi, then the equilibrium is in working with excess

conclusion

In the field calculation, all 4 components must be in balance with item FM = "closed".

→ Asymmetric field system. Optimal if the equilibrium is exceeded: We gain work Wn.

7.3 KPM-FM connection

Note: Magnetic shape anisotropy (demagnetization factor N) in FM plus crystal anisotropy in FM (Fig. 58).

8. Simultaneous compensation W _t

8.1 Flat PM with offset pole pieces (Fig. 59)

FM movement parallel to the magnetic field. Compensation in two areas

S-Pole is used 1/2 offset to compensate for 1/2 N-Pole.

ΣW- _x = + Wιι-Wι ₂ = 0

ΣW _{+ x} = + Wn-Wι ₂ = 0 option

Turn the field vector of the KPM by 180 ° so that the induction amplitudes

Flux density amplitudes B are covariant and are not opposite or not identical → force-displacement characteristic oriented in the same direction, otherwise asymmetry in the momentary compensation during the FM movement.

8.2 Sandwich PM with offset pole pieces (Fig. 60) 9. Iniine compensator 1. Square Z rectangle magnet FM system

1.1 square / rectangle ag net system

The further explanation is first made on a square or rectangular magnet with the pole faces in the longitudinal direction

point (z direction).

This magnetic form has the advantage over the round disc magnet that a preferred magnetic direction can be set in which the FM moves either parallel or perpendicular to the field / field lines. The FM / PS is thus switched in the potential field (parallel to the field lines in the x direction) or perpendicular to it on an equipotential surface (in the y direction) - the transverse forces are very different. The same applies for the U-shaped magnet as opposed to the circular disk magnet in which the field lines are polar un ^'is not oriented orthogonally.

1.2 field modulator

1.2.1 FM has an optimized thickness that creates a balance between the repelling PMs, so that the path 2 UT → OT with closed FM without work W | ₂ can be done.

Optimization process a) If the equilibrium is not precisely adjusted, for example, so that the PM's are already attracted to the FM at a longitudinal distance of approx. 1 mm in front of the FM, it follows that this amount of attraction then occurs with FM "Open in the movement OT → UT is missing as an amount at repulsion (= reduction of work Wn on path 1.) b) On the other hand, this distance setting of the FM has the consequence that when the FM is moved transversely parallel in the field direction over a relatively large transverse distance almost to the PM - There is almost a balance at the edge: force-displacement characteristic first positive (repulsion), then parallel to the x-direction (neutral), then strongly negative, which is why the FM can switch almost all of the force over a short distance on the edge of the PM. The force-displacement characteristic is - due to the longitudinal FM distance - strongly asymmetrical at the PM edge: the work Wtn is not in balance with W _t -ι ₂ consequence: toggle switch effect; the steeper the force-displacement function at the PM edge, the better the non-linearity of the switching effect. This toggle switching effect is only available with a rectangular magnet, with a round magnet a sine function is part of the switching function, since the FM is opened / closed in a circular arc and in the direction of the field. c) If the FM distance is set to the equilibrium PM-FM-PM, there is no such strong asymmetry in the force-displacement characteristic of the FM. So if no explicit tipping effect (= power amplifier) is to be used, the asymmetry of the force-displacement characteristic curve must, as already explained, through the balance between the working components ArbeitsW1 = + W _t nW _t ι ₂ = 0 a magnetic transverse compensator can be made. 1.2.2 The FM must not be transversely shifted too far in the x direction. The shift is sufficient to the point of inflection of the force-displacement characteristic: when it goes from negative values to zero again. This turning point also determines the dimensions of the FM with a large stray field, since with a smaller FM the outer stray field has an impact effect and this component should just be zero (the FM must therefore be somewhat thicker with greater attraction in order to compensate for this component, or the FM must also have the correct dimension in the transverse direction). 1.3 Pole shoes (PS)

Principle with 2 pole shoes

The transversely movable and longitudinally oscillating in time

Pole shoes (PM 1 PS each) increase the force

(Air gap bridging) with larger longitudinal work W _A = H. PS "closed" is compensated with PS "open" in the transverse work.

(Fig. 61 Adhesive forces, Fig. 62: Elastic PS, Fig. 63: Wedge positive lock,

Fig. 64: Conical form fit)

Adhesive forces (Fig. 61)

Force F at a distance h at a large distance = force-displacement function F ₀ (h) = 0 mm = flat pole face

Fι (h) = surface curvature / shape a) analytically defined surface shape (45 °, V W-shape, ball, etc.) to increase the load-bearing component b) due to the magnetic refractive index, the field lines are placed in the normal direction with a suitable surface shape F ₂ ( h) = grain orientation with inhomogeneous field generated: focus, flux concentration outside the pole face F ₃ (h) = high adhesive force and distance effect with a large distance between the magnetic poles (last resort: increased dead weight of the PM, reduced H / G = ratio V) distance : h ₀ = 0 mm; h _t = 0.05-0.1 mm; h ₂ = WP turning point; h ₃ = 1.0 D; h ₄ = 1.3 D; h ₅ = 1.5D D = diameter or diagonal of the magnet system

Principle with 1 pole shoe

By using the crystal anisotropy and magnetic shape anisotropy, only 1 HP is needed, which is coupled with the FM and not with the PM's.

2. U / sandwich agnet system

2.1 The U / sandwich system has the following advantages

- Almost no external stray field, i.e. sharp field delimitation, since field acts between the sandwich legs, hardly any external repulsive component.

- Force approx. Factor 18 higher than open magnet system without inference

- U or sandwich magnet has a pronounced magnetic preferred direction between the legs = flux plates FP (inference). When moving the FM not in the direction of the field, but perpendicular to it, i.e. in

U / sandwich profile direction, the displacement force goes to zero. There is no switching effect at the PM edge as with the shift in the direction of the preferred magnetic direction (edge of the current loop). 2.2 System design

The FM becomes thinner and shorter in length because an external stray field is only weakly present (is almost prevented by the flux plates (FP) as a conclusion).

The FM is adjusted in such a way that the longitudinal equilibrium state of PM-FM-PM (with E = 0 as the energy gap) is established. There is a force-missing component in the air gap between FM and PM, see force-displacement characteristic.

The balance in the stroke -hι (UT → OT), i.e. neither positive nor negative force component shortly before the PM is also important because the force for generating the work must be maximized in order to be able to initiate it via the connecting rod variator at 90 ° KW with the maximum lever arm.

→ Work and energy balance FKM, constant space process (p-, V-diagram) → Path UT → OT without increasing / reducing the force Sandwich construction: FP-PM-FP-P -FP-P -FP, square or rectangular system

3. Inline FM compensator 3.1 Initial conditions

1. Equilibrium path in the transverse FM force-displacement characteristic with great asymmetry / non-linearity at the PM edge with FM tilt / switch effect. Therefore, the FKG can also be used as a power amplifier.

Consequence: attraction of the PMs before the FM in the 4th bar.

2. Balance in the PM's with the FM in OT.

Consequence: transverse force-displacement characteristic intersects the transverse axis at a large angle → no equilibrium when the FM moves transversely.

3. Balance is set for the PM's in the 4th cycle up to the air gap distance PM-FM and balance for the transverse FM movement. 1. Solution: Surface edge variation 1. The transverse force-displacement characteristic is transferred to the PM surface edge as an anti-transverse force function (= positive working surface due to negative PM surface difference and negative working surface due to positive PM surface difference compensated F = B ² -A 2μo) - consequence: The induced force in the FM changes in the transverse direction with the changing area = the edge of the PM with transverse movement of the FM so that the total work W-izu on the balance between the Components Wm and W is compensated. 2nd solution: Power amplifier 2nd as 1, but additionally with a very steep increase in power over a very short distance only at the edge of the PM when the FM is in the open-closed position → very fast, non-linear open-close oscillation of the FM is possible. Consequence: non-linear switching function despite equilibrium over a long distance along the transverse path when opening the FM.

4. Result: The PM edge as an anti-transverse force function determines the transverse force-displacement characteristic of the FM (compensation if necessary with integration of a non-linear switching function).

3.2 FM movement a) FM movement parallel to the magn. Preferred direction. b) FM movement perpendicular to the magn. Preferred direction. ^""

3.3 PM sandwich system (= cell → "power cell") With anisotropic magn. Preferred direction in FM (Fig. 65) "Power Cell" sandwich system (Fig. 65) F = (B ² / 2μ ₀ ) A; note B ₂ at the working point A ₃ MV preferred magnetic direction

FM field modulator

PM permanent magnet

AM working magnet system

FP river plates

SFP-1S thickness at 1 pole

Stroke h, = 10.0-1.3 2 = 18.3 → h, = 20 mm Option: anisotropic FM (grain-oriented, crystal anisotropy, magnetic field annealing, etc.) = magnetic preferred direction in the FM material field lines, if FM in Contact or very close «additional field lines at FM distance hι G interface, distance d * 0.05 mm

Alternative anti-transverse force function: F = / (B ² ) -A / 2μo instead of area difference at the PM edge, B variation and / or r-strip in FPs 3.4 iniine compensator variants

Differential variation of (A, μa, ή _a ) → / (FI, t) with amplification or attenuation.

3.4.1 → Anti-Transversal Force Compensator Principles (Fig. 66. 1-3)) Longitudinal Force F | perpendicular to the surface also has transverse ones in the field

Force component Ft that is to effect the compensation. F (B ^2/2 ₀ ) A The following principles can be combined; they are parallel and / or perpendicular to the magn. Preferred direction of the PM's applicable. 1. Area function / (A) → variation of the exit area (Fig. 66.1 a, b) HA K, Ki constant = B ² / 2μ ₀ A = / aΔs; a = / (s) B-Φ / A = magn. River / area

2. Permeability function / (μ _a ) → vary the amplitude permeability (Fig. 66.2 ^ Fp (/ (μ _a ) -K ₃ ) ² -K ₂ = B ² -A / 2μ ₀ K2 constant = A / 2μ ₀ K ₃ _ "constant microhm-H _a μ absolute permeability μ = B / H _μ τ relative permeability = permeability material = ĩr = μ / μ _0, (£ * a)... μ _a amplitude permeability μ _a certain at the operating point a ₃ at a Modulation μ ^ l ft) -1 / μ ₀ Differential values (→ O) in exchange for difference values (finite values in the computer) Bdr → BΔs differential or difference flux density piece μ _a dr → μ _a Δs differential or differential Amplitude permeability piece Change of μ _a at the working point A ₃ along the path s → change of the material with a different conductivity μ _a at A ₃

3.PM field strength function / (ft _a ) → field strength amplitude vary (Fig. 66.3) PM coil with function fia (s) Fr (/ (fi _a ) -K ₄ ) ² -K ₂ K constant A / 2μ ₀ B Amplitude flux density ήa amplitude field strength outer coil field (PM field) K ₄ constant μ _s -μ ₀ = constant material operating point I di → l-Δs differential or differential current conductor piece ή _a dι → 6 _a Δι differential or difference field strength amplitudes -Piece

3.4.2 Examples with disc PM (Fig. 67)

Variation of Ö (one coil) orl? (of a PM), area A '(PS), amplitude permeability (magn. amplitude conductivity) μ _a and of pole shoe material S (PS)

→ / (K) = compensation function. As (FM) = f (B)

3.4.3 Recuperation → kinetic compensation Energy recovery: kinetic energy (kin. Energy) is recovered when braking or "external" energy supply in the FM circuit (Fig. 68).

+ W acceleration FM by external energy supply -W braking of the FM In addition to potential energy [+ W- (- W) → 0J, kinetic energy is converted in the FM drive.

3.4.4 Examples with sandwich system 3.4.4.1 FM movement perpendicular to the field lines (Fig. 69)

→ Compensation perpendicular to the field lines / force field (y direction) s path

A area / (A) area function a width a = / (s) μ _a amplitude permeability at the working point A ₃ with fabric S _/ "a = (s) → fabric anisotropy fta field strength amplitude along the outer field of the coil or PM (B) de way s → ή _a = / (s)

B Amplitude flux density - note B ₂ = operating point A ₃ - MV magnetic preferred direction (preferred field direction)

F | longitudinal force (in normal direction = F _n )

F _t transverse force (in tangential direction = Ft) here perpendicular to the preferred force field direction or B

FF / (B ,, A), F _t = / (B _t , A)

3.4.4.2 FM movement parallel to the field lines (Fig. 70)

→ compensation parallel to the field lines / force field (x-direction)

Variation:

ΔA change in exit area Δμ _a change in amplitude permeability in FP

ΔÖ _a change in the field strength amplitude outer field of the coil / PM (B)

MV preferred magnetic direction

1-dl → l ds differential current conductor (PM) piece generates field dH or ΔH, dB or ΔB through the substance. This field can be broken down into components parallel and perpendicular to the axis → Biot-Savart law.

3.4.5 Transversal force compensation through PM cell arrangement (Fig. 71) 1. Basic PM system (cell = sandwich or U-profile) B field knee, magnetic flux density

B = Φ / A = magn. River / area Φ total magn. Field lines of the PM or the coil

3.4.6 Generation of anisotropic magnetic field (Fig. 72) MV magn. Preferred direction: oval solenoid with shield

7. Flux control principle of action pole shoes (PS) and field modulator (FM)

The pole shoes have the task of bridging the air gap that results from pulling out the field modulator in order to significantly increase the magnetic force a) between 2 pole shoes, one coupled to the PM, or b) by means of 1 pole shoe, coupled to the FM , 1. Pole shoes with ferro agnetisc isotropic fabric

3 magnetic flux models are shown below (Fig. 73) a) Ferromagnetic disk with coil (= 1 body) → magnetization by the coil is transported as magnetic field energy to the ends of the disk (demagnetization factor N → O) and magnetic poles are created there. b) Magnet in contact with 2 ferromagnetic disks (PS) (= 1 body with 3 zones) → Magnetization by the magnet is transported as magnetic field energy via the contact surfaces / interfaces (G) to the ends of the disks only at N → O; in the case of thin panes with N → 1, the field emerges tangentially from the PS disk. c) Magnet with an air gap between two ferromagnetic disks (PS) (= 3 bodies) → Magnetization by the magnet is not transported as magnetic energy to the ends of the disks (PS), because these - because of the air gap d (interface) and N → 1 - how shields act and not how conductors work (note magnetic calculation index)

2. Pole shoes with anisotropic material (magnetic preferred direction (MV)

In order to conduct the magnetic flux in the PS primarily only axially and to be able to reduce the tangentially emerging stray field, in addition to controlling the

Entmagnetisierungsfakton? anisotropic material can be used. Magnetic anisotropy can be used in different ways, here two cases:

1. Crystal anisotropy (orientation dependence of the polarization with respect to the crystal axis)

2. Magnetic field-induced uniaxial anisotropies K _u

3. Stress-induced anisotropies

Crystal anisotropy in PS

The ansisotropy field strength H _A is the field strength to turn the magnetization from the easy preferred direction in the direction of the hardest magnetizability.

When selecting the anisotropically active substance and when calculating, it must be ensured that the tangential flux density component depends on the field strength. From a certain field strength, the axial and radial components are the same size. In the cases mentioned, pole shoe disks occur in which the magnetic flux (MV) preferably runs in the axial direction of the PS disk and transversely thereto the PS disk is difficult to magnetize, with the result that the tangential leakage flux is also minimized. Anisotropic PS interface / air gap (Fig. 74) Combination of anisotropy with demagnetization factor

Due to the previously described functional ice, the direction-dependent anisotropy conductivity and the demagnetization factor N can be used cumulatively in the design of the PS and FM as a field modulator switch

Field modulator switch (Fig. 75)

Switching: Flow longitudinal / axial from * → Φ = 0 crystal anisotropy etc. and / or magn. Shape anisotropy Example: a) Cobalt crystal (anisotropic) Co-hexagonal elemental resins He a and c: lattice constants μ direction-dependent permeability ^→ x, μ _y → μ _z b) isotropic CoFe N → 0 / N → 1 c) Magnetic shape anisotropy N direction and location-dependent demagnetization factor

Control with values in the "kink" operating point A ₃ with B ₂ , H ^ Bern .: Co has a greater difference in magnetization between the axes than

Fe or Ni.

3. Demagnetization factor and air gap influence 3.1 Demagnetization factor N A long rod is easier to magnetize in the longitudinal direction (N = 0) than transversely to it (N = 0.5), a plate is more tangential (N = 0) than perpendicular to the plane of the plate (N = 1 ). → Magnetic shape anisotropy.

Consequence for the construction of the pole piece: The PS is not a one-piece plate, but must:

Solution 1: Be composed of many "long" and thin square bars in a tight grid packing (like a checkerboard pattern); the length of the rod corresponds to the thickness of the pole piece, the cross-sectional dimension of the rod should be selected so that N → O goes in the longitudinal direction of the rod. Advantage: Reduction of the eddy currents to rod eddy currents if these are insulated by a dielectric layer.

Solution 2: Many parallel axial stripes (lines).

Solution 3: Cut the disk from the tape core, tape made of thin film with an anisotropic material.

3.2 Shear The shear describes the relationship between the demagnetization factor N, air gap length l = d and the mean material path length ls. Magnetic characteristics are shear-dependent: hysteresis loop, new curve, all permeability values, remanence and apparent power, coercive field strength, saturation polarization and losses (based on constant induction). → Construction of the shear line with 4. FM field modulator: demagnetization N → magnetization M switch If the FM is used as a thin plate, the magnetic shape anisotropy with demagnetization N → 1 perpendicular T plate plane and N → O in the plate plane results in a shielding effect between the permanent magnets. Option: FM made up of many thin parallel plates → reinforcement of the

Shielding effect plus anti-eddy current effect.

Conversely, an FM structure made of many thin sheets in the axial direction (sheet metal) with N → O leads to an axial conduction of the magnetic field. A crystal anisotope in the axial direction of the sheet can be found in these sheets

Increase the conductivity so that the tangential stray field is minimized.

The field modulator switches, depending on the direction of the sheet metal, between blocks N → 1 and pass-through = routing N → O as magn. Shape anisotropy and crystal anisotropy peelers.

The consequence for the FKG construction is: Instead of two pole pieces (one for each PM), it is possible to switch from a blocking FM to a conductive FM - due to the change in the magnetic shape anisotropy value in the axial direction from N → 1 → 0 and the crystal Aniotropia etc.

States in the channel (Fig. 76) Shape anisotropy replacement model (Fig. 77)

Electrical insulation layer SiO Magnetic insulation layer CoO

Axis ratio of the plates a / b »1 for axially magnetized rod N → O a / b« 1 for magnetization perpendicular to the plane of the plate (thin plate) N → 1 a / b = 1 ball or cube N = 1/3

Example a = 0.5 mm b = 0.05 mm a / b = 10 → N = 0.02 H _S = -NM Generalized and written down vectorially for any magnetization direction → N would be a tensor that combines the vectors M and H with each other ,

Shape anisotropy cases (as a replacement model for crystal, magnetic field induced and

Strain anisotropy, shape anisotropy can be used)

1. FM / PS movement perpendicular to the field (Fig. 78) 2. FM / PS movement parallel to the field (Fig. 79)

The pole pieces can be constructed as in the principle of a multi-channel plate. The ratio length to width of the magn. Shape anisotropy (= length-to-width quotient) can be in the range 40-100 (see rotation ellipsoid). The PS plates can be designed as "single", "chevron" or as a Z-stack. Effectiveness of the PS and FB / S

For the effectiveness of the PS and FM, it is necessary that these components are operated in a magnetic field that is constant over the entrance surface and has a constant amulity field strength Öa ₂ with B ₂ at the working point A3. At this operating point the greatest conductivity is μ _{rmaκ of} the selected one

Fabric available. Switch S → switching states = FM flip-flop

8. Flow modulation / flux amplification of ferromagnetic material in the magnetic field (Fig. 80) 1. Magnetization curve (W x H) Magn. Flux Φ = BA (flux Φ corresponds to magnetic current l _m ). Magn. Voltage Θ-Hl (electrical flooding Θ = magn. Voltage U _m >. Working point A or A ₃ (BH) _max for soft magnetic substances S (with transistor with H field across the channel).

2. Course of the permeability number μ _r Magn. Conductivity μ = μoμ _r , a permeability amplitude; applies analogously to ferroelectric substances (have a hysteresis) in the electrical field with: a) electrification curve (D x E) b) curve of the permittivity number ε _r

Ferromagnetic material as switch S amplifier (Fig. 81, 82) → visual states = FM flip-flop

parameter

M magnetization (excitation / magnetization) [A / crn] B magn. Flux density, B _s at saturation [T] H _a outer coil field, magn. Field strength [A / cm] o magn. Field constant 1, 256-10 ^"4 Tcm / A μ _a amplitude permeability

B = μo (H _a + M) M = B / μ ₀ -H _a μ _a = 1 / μo Blk, B, ή amlitude values

modulation types

1. Conductivity modulation

The conductivity can be changed in different ways: a) temperature change (ferromagnetism → paramagnetism) b) change in the magnetization carrier concentration in the M-semiconductor c) switching between FM in channel μr = max (flux = non-conductive in channel SD → "closed" = Equilibrium between the PM's) according to FM outside the channel, ie air / vacuum in the channel μ _r ≥ 1 (flow in the channel SD → 'Αuf' = repulsion of the PM's).

2. Cross-sectional modulation

A magnetic field across the PM flux channel controls the magnetic flux / current between the source and drain. M-field modulator design 1. Stationary FM For the optimal design of the field modulator, the magnetic preferred axis (= anisotropy axis) of the FM should act in the transverse direction with the stationary 5 variant and the flux rotation B should be constant, i.e. the flux may change Cross-sectional area A at the location with Ad (x, y, z) or AΔ (x, y, z). This ensures that the FM in the conductive state "open at point A _{3 is} always operated at B ₂ with H ^, ie with optimal effect with a maximum of 10 conductivity in the transverse direction. Magnetic semiconductor components, (magnetronics): M-bipolar- Transistor M-BT and M-field effect transistor M-FET. The M-FET can only be switched on and off by means of a transverse field, without kinematic shifting of the FM _r ^" 15. 2. Kinematic FM With kinematic FM it makes sense to have a low conductivity in the direction of movement (due to attraction by the PM's) and perpendicular to it 20 (with an anisotropic field) the high conductivity and constant flux density (apart from the compensation function), so that here the function of the FM in all areas lies at the working point A ₃ / point B2. Field modulator as M-transistor switch 25 M-transistors as switches have two switching states: They work in the magn. Saturation (magn. Conductive working point A ₃ = "on" (B ₂ = B _opt at H _S2 and μ _max ) or are blocked (magn. Non-conductive ^' - magnetically transparent (r = 1) point A1 = "off" (B ₅ = B _max at H _a5 = H _amax ), (note saturation range = overdrive range Bo at H _a o to B ₃ at H _a , start of over-range = 30 start of saturation at point A ₂ on the working line. Field modulator as M-transistor amplifier A small magnetic base current / flux ΦB causes a large magnetic collector current / flux Φc in the M transistor, which is called 35 magnetic current / flux amplification (V _Φ ). An M transistor can also be used as a magnetic voltage amplifier (V _© ) and power amplifier (Vp) are operated FM control "open / close" by magnetic auxiliary field

40 With a suitable choice of material (S) and field strength amplitude H ₃₂ induction amplitude B ₂ with μ _max at operating point A ₃ with maximum amplification of the magnetization M, the controlling auxiliary field H _a2 acts maximally and with the least energy expenditure, so that the FM can become even thinner than that passive FM variant (without active auxiliary field).

45 field vectors / flow variation / field direction In a polar field, as created by a round disk magnet, all field lines at the reversal point of the field (center point) are oriented in the radial direction, so that the transverse displacement of the FM 50 by this inhomogeneous, the same in every direction Field related to force to be exerted is influenced: There is a tensile force and after the PM center is exceeded a D ck force on the FM, regardless of the tangential direction from which the FM is moved to the center.

This is not the case with a U-profile magnet or sandwich PM, because the field is not polar, but different in the x / y axis: If the FM is moved parallel to the field vectors, i.e. between the U legs, so there is the above Problem. If the FM is moved perpendicular to it, i.e. in the U-profile direction, the FM intersects the field vectors and the

The force must be different (→ comparison of magnet systems Fig. 83).

The component decomposition of the field line / field strength / flux density / force of the vector potential is carried out in B _r B $ with a polar angle (FIG. 84). In the case of a U or sandwich magnet, the component is defined in the orthogonal coordinate system along the y axis.

Bern: The field line is drawn in a vacuum. In the case of material in the field, Maxwell's stress tensor acts on the surface at point P (magnetic refractive index, the field line is broken to the plumb line). Through the

Deviation from perpendicular to the fabric surface (FM) results in tangential forces. FM material limit = μ jump. I

Attention: The compensation field is also effective in the longitudinal stroke direction, note neutral zone NZ.

Solution also possible with induction coil.

Process: 1st cycle: switch on field H _a when FM opens (at OT) → compensation switch off field H _a after FM open 3rd cycle at FM close (at UT) no influence field H _a = undisturbed balance PM-FM-PM coil if necessary with energy recovery at FM "Close" in 3rd cycle

9. Field amplification at operating point A ₃ characteristic curve for amplification factor (Fig. 85) A ₃ operating point - (BΗ) _max (negative energy) = maximum energy product = quality indicator for soft magnetic substances. S Magnetization curve fabric W turning point W ₁ W beginning W ₂ tangent μ _a max at BH _a characteristic W ₃ end

Cylinder coil (Fig. 86) I coil length = l _m = average field line length N number of turns I current r average coil radius H _a outer coil field H coil center (x = l / 2) H = (N / l) M / V4r ² + P → find optimum U- 4r ² + PH coil end H = 0.5- (N / I) -H / V4r ² + I ² → Find optimum l / V4r ² +

Core K reinforces outer coil field H _a s ^→ very low energy consumption with current I at H _a s due to equivalence with outer PM field H _aP M. | H _a s | = IHaPWll → Low current I neutralizes strong PM field H ₃ M or too

Eddy current field with a comparably small coil and small current (→ compensator)

Note n-level reinforcement 1st stage coil core with μ _a (?) 2nd stage pole shoes with μ _a (e.g. CoFe) 3rd stage concentrator

Specific conductivity own weight Coil winding: AI for oscillating / moving coils Cu for stationary coils due to specific ratio of conductivity to own weight

Conductivity p ₂₀ , density p AI p ₂₀ = 0.02825, density p = 2.7 kg / dm ³ Cu p ₂ _ = 0.01754, density p = 8.9δ kg / dm ³

Density ratio V _P = 9.96 / 2J = 3.32 Specific ratio conductivity-own weight V Cu 0.01754-3.32 = 0.0582328 »AI p ₂₀ 0.02825 → ratio V = 0.0582328 / 0.02825 V = 2.0613

Permanent magnet with reinforcing core and sleeve (Fig. 87) Hysteresis loop shape for soft and hard magnetic materials (Fig. 88)

Amplifier cascade (Fig. 89, 90, 91) Item Designation / function

1. Permanent magnet (PM), permanent electret (PE), super conductor magnet (SM) Option: Ring PM with amplifier jacket inside / outside or

2. Coil with reinforcing core (H _a2 , B ₂ ), ribbon core, or

3. Coil without a core with a field strength amplitude H _a .

4. Divergence / dicentration / divergator with N-Pol = dilute strong field Given: B _PM -A, process: instead of field concentration → field decentration, flux density BA reduce area - <A → -A 'with Bp _M (A) → B' _PM (A ') (equivalent to coil field H _a ), ie from H _a p _M → H'a ₂ M, matching the B-Ha characteristic of the material with S (μ _a ) = displacement of ^ H _a ,> B ₂ → H _B z, <B _Z. The field strength amplitude H _fl changes with B on the characteristic curve S. Convergence / concentration / concentrator with S-Pol: reverse function as with N-Pol. 5. Increase flux density B ₂ with H _a2 with substance S (μ _a ). Band core with different substances S (radial ₃ layers, function: ^ r = - μ _a → H = μ _a , with falling B (r) = radius-dependent μ _a

6. Cascade with step reinforcement per unit pos. 4.-5.

7. Field concentration of - <B ₂ -A →;> - B ₂ -A 'by reducing the area A' → A → flux density, material (S) with a higher BH _a level is adapted. The field strength amplitude H _a changes with B on the characteristic curve S. convergence / concentration / concentrator

8. Pole shoe at the highest flux density level of the material. Output variables F = B ² A 2 _α variable A Result: B ₂ on S with H _a z M = Baμo - H _a

Sandwich amplifier (V) (Fig. 89) Sandwich attenuator (A) (Fig. 90)

Adaptation to B ₂ , H _S 2 (Fig. 91)

10. PM / PE panel design PM panel design

1. Permanent magnet (PM)

1.1 Round disc magnet (AP) (Fig. 92) d air gap

H holding magnet (d = 0) G dead weight

D Maximization S Minimization l _m mean field line length → optimization H / G

Demagnetization factor N = 1 (thin plate) with coercive field of equal strength due to anti-parallel PM

1.2 Square disc magnet (AP) (Fig. 93) Variant A: square α = 0 °

Variant B: Rhombus α = 45 ° a = b optimum (maximum) s minimization → optimization H / G

Demagnetization factor N = 1 (thin plate) with coercive field of equal strength due to an parallel parallel PM 1.3 Rectangular disc magnet (AP) (Fig. 94)

Variant A: α = 0 ° Variant B: Rhombus α = 45 ° a maximization b minimization s minimization

→ Optimization H / G

Demagnetization factor N = 1 (thin plate) with equally strong coercive field due to antiparatielen PM

1.4 Rotational ellipsoid (RE) (Fig. 95, 96)

RE magnetized homogeneously along the axis of rotation

N describes the magnetic shape anisotropy demagnetization factor -1 at a b = 0 a polar semiaxis = axis of rotation (parallel magnetized direction) b - equatorial semiaxis

→ Weight reduction of RE compared to thin plate and the same

Magnetization (homogeneously magnetized).

1.5 U magnet (Fig. 97)

Magnetization in the circumferential direction

Advantage: Both poles without inference on the same side → weight reduction coil

Θ Electrical flooding l _m mean field line length

I current

N number of turns H magnetic field strength = Θ / I _m = I ^■ N / l _m

parameter

Rι inner radius

R _m mean radius R _a outer radius

L maximization

D _m 2R _m (pole spacing → field penetration direction zz direction h (stroke) = effective range

M jacket for stray field s = 0.1 mm, μ _a = 400,000

→ Optimization H / G

Demagnetization factor N = 1 with coercive field of equal strength due to anti-parallel PM

2. PM sandwich (multi-layer) (Fig. 98) Advantages: a) higher adhesive force / flux density b) larger packing density c) magnetic crown design, alternatives: 1. higher force 2. steeper field lines 3. homogeneous field Maximization: Higher force F (Fig. 99) a) Sandwich construction with a smaller area A b) Magnetic crown 1, 2, 3, = analytical area size / size 4 = magn. Refractive index for field penetration direction z → homogenize inhomogeneous field → steeper field lines c) reduce area to A ₂ parameter F force [N] B magnetic flux density [T] A area [cm ² ] = (2 A ¹ ,), (A ₂ = 1 / 2A ₁ → 2-F) μ ₀ magnetic field constant = 1, 256-10 ^"4 Tcm / AF = B ² -A 2 ₀ 3. Stroke increase Without increasing the dead weight by rotating the magnet configuration without changing the area, ie A remains with the rotation 3.1 Variant A (Fig. 100, 101) Hu hh 1, 0 - 1.3; max 1.4-e parallel displacement also applies to U-magnet etc. Parallel displacement at angle α also applies to U-magnet etc. Caution: N-pole past S-pole → repulsion → attraction h _max V2 -e = 1.4142-e 3.2 variant B (Fig. 102, 103) 3.3 variant C (Fig. 104)

3.4 Variant D (transversal system) (Fig. 105) Modification of the force-displacement characteristics by, field design 1. Orthogonal system (Fig. 105 a, b, c, Fig. 106 a, b, c) a ) Orthogonal field b) Angle α-Fe! Dc) Immersion system → steeper gradient d) along c2) across

2. Diagonal system (Fig. 107) a) Orthogonal field flow b) Diagonal field flow → larger pole spacing → large stroke

Advantages: - Sandwich, narrow construction - Great strength F | plus large (diagonal) pole distance → large field depth effect (penetration) → large stroke h, → short switching distance The higher the coercive field strength of the PP, the smaller its length

3. Orthogonal-diagonal system (Fig. 108) 1. PM = stator 2. Isotropic armature with N → O in the longitudinal direction

3. Anisotropic anchor N → O + crystal anisotropy etc. to avoid the tangential leakage flux

4. Note the high spec. electrical resistance due to armature oscillating in the PM field → anti-eddy current measures Force generation principles with maximization of the field force Repulsion of 2 PM's (N ~ N) attraction 2 PM's (N = »S) attraction F _e = * PM repulsion attraction PM-AI ring with induction Magnet-AI ring with induced eddy currents and Lenz -Rule

FM Design

1. FKG with Inline-FM (Fig. 110, 111) 1.1 Working cycle in a cycle (→ p, V diagram)

1.2 Kinematic flow control

Note the magnetic shape anisotropy for FM and PS 1.2.1 FKG with FM without Pόtechuhe (PS) (Fig. 112) d Force reduction due to air gap d. G boundary layer transition

1.2.2 FKM with FM and pole shoes (PS) pole shoes bridge the air gap → higher repulsive force F |

Variant A: pole shoes not split in the middle (Fig. 113) Variant B: split PS (dimensions a, b see magnetic shape anisotropy with N (Flg. 11) 2. FKG with outline FM

Field modulator (attraction balance) + pole shoes (PS) with

Flow diversion in one component. (Fig. 115)

PS: Pole shoes in B ₂ , H _a2 adjusted (working point A ₃ in BH characteristic) Magn. Shape anisotropy (Fig. 116)

Magnetization factor / demagnetization factor N: Because of N, the magnetic properties of soft magnetic materials are shape-dependent: an FM long (rod) is easier to magnetize in the longitudinal direction than transverse to it, an FM short (thin plate) is tangential than perpendicular to the plane of the plate.

3. FKG transversal system Variant A: Inline FM (Fig. 117) Variant B: Outline FM (Fig. 118) At cycle 4 .: Pay attention to torque on FM.

Avoidance: Variable FM → overlap of the PM → variable area of the FM, depending on the stroke h (alternatively sandwich alternating and offset). (Fig.117)

4. Active field modulator (Fig. 113, 120, 121, 122, 123, 124, 125) Compare: In FM systematic item 4 soft magnetic induction FM a) coil with variable / dynamic magnetization b) pulse magnetization with pulse compression technology at Ha, B2, μ _a FM states:

1. Attraction N-0/0-S = inactive

2. Strong attraction N-S / N-S = ZU

3. Strong repulsion N-N / S-S = OPEN

3. Outline FM (Fig. 121)

Coil arrangement core K at current I. FM states: 1. Neutral "off '0-N = OPEN

2. Coil "on" S-N = CLOSE

3. Coil "on" NN = pole reversed ON coil → gain a) Disadvantage: coil takes up space for multilayer PM → ΣF, large coil radius (-t formula), -. b) Advantage: space for many small coils, small I, smaller r (→ formula) → high effect at - <l. Switch point A ₃ (Fig. 122)

Soft magnetic induction field strength FM (in FM system type 4b)

Principle of transistor, but without semiconductor material Switching of working point A ₃ type 4a: permeability induction FM → Z _a → high switching energy nax. Bo t ^→ Mr = 1, B _ma χ (= saturation B _s )

Type 4b: Induction field strength FM → Z _b → small switching energy

Switching states Z _b :

1. "OPEN" = flux quantum pass-through (bei) at H _a2 with B ₂ (M reinforced) 2. "CLOSE" = flux quantum blocking with applied counter-field strength amplitude -H _a2 (coercive field strength) -H _a2 ; B ₂ → H _a o, Bo (→ M = min or 0 the first time (→ 2-74: soft magnetic hysteresis loop)

A ₃ working point - (BH) _max (- = negative energy = attraction) - max. negative energy product soft mag. Fabric = quality mark for soft magnetic fabrics

S Magnetization characteristic curve fabric S

Switching process

1. Reduction of control energy l → H _a2

2. Increase in enemy strength Switching via channel cross-section modulation by magn. Analog field across the channel. Field effect transistor M-FET. (Fig. 124, 125) FM kinematic or stationary, a) With one transverse field (gate) b) With two transverse fields (gate)

11.Solid-state FKM generator (FKG)

= Electrodynamic principle (without moving parts) → Lorentz force on moving charge carriers or live conductors (F «1/40 of the electromagnetic principle - attraction of an Fe armature = moving part)

Solid state machine

The field force generator FKG can also be used as a "solid-state" machine, i.e. without moving parts, for the inductive generation of primary current: a) from a rapidly changing magnetic field (magnetostatic field in front of the FM - modulated by a stationary-active field modulator. The basis of the unsteady magnetic field is the magnetostatic DC field modulated by the FM from the stationary potential field of a permanent magnet, or b) from a rapidly changing electret field (electrostatic field in front of the FM - modulated by a stationary active field modulator. The basis of the unsteady electric field is the electrostatic constant field modulated by the FM from the stationary potential field of a person anent electrets, or c) as a) from a stationary Gieich field of a superconducting magnet, which is modulated by the stationary FM → unsteady magnetic field,

Fixed PM's

Fixed PMs can also be realized as solid-state FKG, stationary PM with a tightening PM piston, or repulsive PM piston. 1. Solid-state FKG variants: Fixed PM's or PE's (Fig. 126)

Fig. 126 a: Solid state stationary

Stationary FM or kinematic FM

Changing over time

Magnetic field induces electric field → electr. electricity

Fig. 122 b: Piston K attraction

Stationary or kinematic FM

K piston - soft magnetic material

Fig. 126 c: Repulsion PM ₁ stationary, PM ₂ piston

Bern .: Longitudinal force-displacement curve in equilibrium at OT, at UT

Ratio of longitudinal to transverse force-displacement characteristic is still V> -1, despite the asymmetrical FM position Note the connecting rod length variator: With OT: FM open without K movement → in equilibrium position

With UT: FM closing without K movement → FM in asymmetrical position

2. Single coil generator (Fig. 127, 128) To Outline FM / PS switching action / flow conduction / flow diversion »main flow Φ path A a) FM high cross-conductivity FM =" CLOSE ", note crystal anisotropy and magnetic shape anisotropy or» secondary flow Φ path B switched by PS (flow deflection) b) PS high longitudinal conductivity PS = "OPEN", note crystal anisotropy and magnetic shape anisotropy FM field modulator = block flow PS pole shoe = guide flow

S coil, alternatively on both legs → more turns FS flux guide pieces = 2 legs

PM .. _ permanent magnet (SM, PE) Fe ferro- / ferrimagnetic G interface / transition Note: Adaptation to B ₂ , H _a2 for optimal switching / amplifier effect

3.Double coil generator (Fig. 129)

PM permanent magnet (SM, PE)

S coil / solenoid

G interface K concentrator → max. Gain B ₂ , H _a2 at operating point A ₃

FM Feidmodulator = lock

PS pole shoe = conduct FM-PS conductivity modulation / switching

"OPEN" = 0 = high resistance in FM → flux Φ path A

"ZU" = 1 = high conductivity in PS → flux Φ path B Fe ferromagnetic / ferrimagnetic

FS The advantage of the 2 flux guide pieces (2 legs) is that you can accommodate many more turns than in an equivalent ferrofree coil.

4. Field modulator types The FM can be used as: 1. Kinematic FM a) passive (conductivity modulation) b) active (conductivity modulation and / or channel cross-section modulation) 2. stationary FM a) conductivity modulation analogue, eg M-BT b) channel cross-section modulation analogue M- FET are trained. B. Advantageous Effects of the Feidkraftgenerafor (FKG) Invention

Magnetostatic-dynamic oscillation cycle process The machine works in a cycle process with magnetostatic-dynamic oscillating states from reversible → irreversible → reversible (overall = irreversible cycle process). The operating principle of the FKG corresponds to a generalized "super transistor machine" due to the different types of FM barrier layers and is also a macroscopic analogy to a superconductor with an energy gap (FM → E = 0) according to the following principle:

The machine generates work / energy / entropy on the basis of the magnetic vector potential longitudinal shock waves (nonlinear elastic force field shock waves = solitons from flux quanta) of PMs repelling themselves in the normal direction (in the longitudinal machine).

Because of the oscillation of the PM's, between the energy generation - return states in the equilibrium state, these shock waves are self-reflecting because of a) the coupled spin moments with spontaneously magnetized domains or b) the coupled magnetic PM moments; generated from the surface ring currents (longitudinal waves, possibly coupled with transverse waves with shear, bending and torsion).

Anti-parallel coupling

The initially parallel coupling of two repulsive PM's (PM pair) takes place via the elastic deformation of the magnetostatic field by the mediatingly attracting FM. The mediating magnetic attractive exchange interaction by an FM distorts the local magnetostatic

Field between the antiparallel PM's → deformation energy → release like with a tensioned spring with FM "OPEN". The FM compensates the repelling antiparallel magnetostatic moments of the PM's by attraction = negative energy in the FM (exchange forces = overlap of the magnetic fields between the three / four magnetic elements: 2 PM's +1 or 2

FM's).

In the case of kinematic FM, the thin FM layer is replaced by air, gas / vacuum when switching to "OPEN"; the interaction does not take place through the FM substance (kinematic FM).

The above-mentioned mode of operation also applies mutatis mutandis to superconducting magnets SM's and PE's with an electrostatic field with ferroelectric FM. Creation of work

A field force generator according to the invention has various advantages. In the "closed" position of the FM there are 2 permanent magnets (repelling) and 1 field modulator (attracting), and thus the machine, in equilibrium with the energy E = 0. If the FM is opened, an imbalance arises from the rejection without FM attraction and it it creates positive work and entropy. In this case, for example in the case of an FKG reciprocating piston machine, the PM piston moves from the top dead center (TDC) to the bottom dead center (UT) (= path W _from ι) of the crankshaft. At UT the FM is closed so that the PM piston can move back from UT to OT without repulsion on a path W _a 2 as part of a cycle. The work W _a is generated in a dissipative system, ie positive work with route W _from ι (OT → UT), no work with route W _ab2 (UT → OT), ie

∑Wa _b = W _abl + Wa _b2 ≠ 0. In the case of a potential field (conservative system) the sum of the work is ΣW _ab = W _ab ι + W _ab2 = 0.

The work W _2u ι = " _Open in OT and W _ZU2 -" _Closed "in UT is very small. The kinematic FM can preferably be on a magnetic equipotential surface (perpendicular to the field) instead of parallel in the

Potential field to be moved. If the exterior becomes negative _work this can be eliminated by compensating W.

The energy balance is thus kleinW _from ι-ΣW _2u ι, where ΣW _2U ι - because of the movement on an equipotential surface and because of the compensation of the work, very small.

The field force generator uses the conversion of permanent magnetic field energy between the magnets by switching the field effect - so the potential energy of the permanent magnets is converted into kinetic energy.

This can be used as drive energy or fed to an electric generator to generate primary electrical energy.

Cycle energy balance (1 work cycle = 360 ° KW) / efficiency (power boost)

1. Work process

Application of the connecting rod length variator according to the invention with a crank mechanism, with the result of the introduction of force at 90 ° KW instead of classic at 0 ° KW. 1 working cycle = 360 ° KW, ie stroke h - KW radius to crank pin HZ. Working process (Fig. 130) I. cycle (power build-up) P i and PM ₂ stationary in TDC position (90 ° KW) at a distance of the FM thickness s. PM's and FM in equilibrium. Energy in the basic state E = 0. 1. Field modulator "Open = PM force buildup 1st stage Wi start work FM" Open "WIFMA _UΓ = JF (St) Δs (W = negative, because CoFe is drawn into the field) 2. Pole shoes PS" Close "to bridge the air gap d and thus an increase in the field force Fi = power build-up 2nd stage. Wi start work PS "close" Wι _PS z _u = JF (s _t ) Δs (+ Wι = positive = W gain, because ferromagnetic material is drawn into the field.) 2nd cycle (work cycle with magnetic repulsive force F,)) PMi and PM ₂ move from OT (90 ° KW) m towards UT (180 ° KW) and deliver work W ₂ to the crankshaft. W ₂ work charge PM "stroke" W ₂ PM + h = J ^* F (Sι) Δs energy state E = positive, it creates magnetic work and entropy. 3rd cycle (power reduction) PMt and PM ₂ stationary in UT position (180 ° KW) at a distance stroke hι. PM's end state. Energy in state E = positive. 1. Pole shoes PS "Open to generate the air gap for the FM and thus reduce the field force F | = Force reduction 1st stage Wi Work PS" Open "W-ips _A u _f = JF (st) Δs (-W- _t - negative = W gain, because ferromagnetic material is drawn into the field.) 2nd field modulator "closed" with reduction of field force Fι → 0 »power reduction 2nd stage Wi work start FM" close "WIFMZU = JF (St) Δs (+ Wι = positive because ferromagnetic material is drawn into the field.) 4th cycle (return / idle stroke without magnetic repulsive counterforce F _t ) PMi, PM ₂ move from UT (180 ° KW) towards OT (270 ° KW) and do not give any work W ₂ to the crankshaft, return movement means low work input for resetting without magnetic repulsive counterforce W ₂ work name PM "stroke" W _2PM - _h = / F (S [) Δs → 0 energy state E → O , there is no magnetic work and no entropy.

2nd cycle work result 1st cycle (strength build-up)

WiFM _A uf = JF (s _t ) Δs, work can also be compensated for WIP _S Z _U = JF (st) Δs, work can also be compensated for

2nd cycle (work cycle with magnetic repulsive force Fi)

3rd cycle (power reduction) -tP _SA u _f = JF (s _t ) Δs, work can be additionally compensated IFMZ _U = JF (st) Δs, work can also be compensated magn. repulsive counterforce Fi) bif

ΣWi = W-iFMAuf + IPSZU ⁺ iPSAuf + WiFMZu total labor tax

Magnetic working efficiency η _m = ΣW ₂ / ΣW ₁ → η _m ^ 1 3. Boundary condition for the work integrals

Boundary conditions for the calculation of the work integrals in the work cycle (cycle 1-4):

The position of the two magnets PMi and PM ₂ must be fixed at the moment (→ connecting rod length variator) while the field modulator is in position

"UP" is pulled out. (In this state, the PM-FM-PS system must not be subject to the free play of the forces between the PM's in its movement as with a normal crankshaft without a connecting rod length variator). The two PMs must be in system equilibrium while the FM is being pulled out and the pole piece (s) are being pushed in.

They must currently be fixed in place (top dead center OT just like bottom dead center UT at 180 ° KW). The force-displacement characteristics of the PM's or the FM or PS are therefore magnetically decoupled - apart from the effects of stray field - through the mechanical fixation of the PM's (due to the new connecting rod variator design). In this respect, they influence each other

Work-integrated work start Wi (through the FM or PS) and work tax W ₂ (through the PM's) hardly at all. This has considerable consequences for the efficiency η _m -W ₂ / Wι = 1. 4. Efficiency (Fig. 131, 132)

Formulas work, efficiency UT Wi = JFr (s) Δβ [Nm] = W _ab = W ₂ oτ

2 FM symmetrical with pulse compensation or Rι W _t = Wi ■ JFf (s) Δs asymmetrical 1 FM Rr R

Wt = / F _t - (s) Δs [Nm] = W _zu = Wι- / F _t (s) Δs

η _m = V = Wi W _t = W _from W _Z u = Wa Wi * η _m η _m »

V = ratio Note: FM or PS compensation in the cycle.

Summary of the Function of the FK Generator According to the Invention 1. Operation

PM = permanent magnet, FM = field modulator, PS = filling shoes

The 4 bars of the working game are:

1st cycle - FM open = pressure build-up (OT 0 ° - OT 90 ° KW) + PS = "closed"

2nd cycle - work (OT 90 ° - UT 180 ° KW) → work / entropy positive

3rd cycle - FM closing = pressure reduction (UT 180 ° - UT 270 ° KW) + PS "Up - 4th cycle - idle stroke / cooling → balance with E = 0 (UT '270 ° - OT 0 ° KW) A working cycle runs with a connecting rod length variator in 1 crankshaft revolution = 360 ° KW (instead of 720 °

KW as with a gasoline engine). The stroke is = crankshaft radius and not crankshaft diameter (classic crank loop) because the PM rests at TDC or UT, the dead center, until the KW changes from 0 ° to 90 ° KW = TDC or 180 ° to 270 ° = UT has continued to be able to transmit the force with a lever arm at 90 ° KW or 270 ° KW.

2. Compression ratio working space

It is the space enclosed by the magnet cylinder and 2 magnets. Its size changes during a stroke according to the above. Bars. The work space is largest when the PM is in UT and smallest when it is in OT.

Field compression space V _c

The size of the compression space V _c = air gap d with FM or

Interface G at PS is the smallest work area. Field displacement V _h

It is the space between the two dead centers OT and UT of the magnetic piston.

Total field displacement V _H It results from the sum of the displacements of the individual magnetic cylinders of an FK generator / motor.

If you compare the space between the magnetic pistons before compression by the FM or PS (displacement V _h + compression space V _c ) with the space between the magnetic pistons after compression of the field (compression space V ₀ ), you get the compression ratio ε (Fig. 133) ε = (V _c + V _h ) Λ / ₀ The higher the compression ratio, the better the use of the field energy and thus the efficiency of the FKG / FKM. The quantum field temperature T _{Q of} the field increases with increasing compression ratio.

Geometric compression ratio

With FKG / FKE charged by fields, the compression is lower, since the field already reaches the magnet cylinder with high compression.

1st law (field analogue to Boyle-Mariotte's gas law) The upward and downward movement of the magnetic pistons PMi and PM ₂ in the cylinder also changes with the volume, the field pressure p and the quantum field temperature TQ of the field. Contrary to Boyle-Mariotte's law for heat engines applies to

Field force machines that change at the same quantum field temperature TQ, volume and pressure in the cylinder with the force-displacement characteristic of the magnets. The following law applies: The product of field pressure and volume is a function of the force-displacement knowledge of the magnets involved.

2. Law (field analogue to Gas-Law by Gay-Lussac) including the quantum field temperature TQ in the ratio of

The following law applies to volume and pressure: If a field is heated at a constant pressure u 1 K, it expands by 1 / T ₀ part of its volume. 3. Pressure curve

The pressure curve of a force field is determined by the force-displacement characteristic of the magnets (Fig. 134):

The pressure curve during combustion has its maximum pressure at the highest temperature between 6 ° and 12 ° crankshaft after TDC (Fig. 135):

Result

By comparing the two characteristics (force field generation), it becomes clear why, in addition to the application of force at 90 ° KW with a much larger lever arm (approx. Factor 4 compared to a classic crank loop), a new crank loop with a connecting rod length variator is necessary: With a classic crank loop, this would be the case

Pistons already run away towards TDC after TDC and the kinematic FM would have to be pulled out very quickly in TDC; this is not the case with the KW with connecting rod variator: the PMi magnetic piston remains in the TDC position very close to the other PM ₂ magnetic piston (i.e. at maximum pressure or force) until the crankshaft reaches TDC at 90 ° KW has reached.

4. p-V working diagram

The relationships between field pressure p, field volume V and quantum field temperature T _Q of fields can be worked for

Transfer the field machine to a pressure-volume diagram (p-V diagram).

This creates an ideal diagram in which the volume does not change at the respective reversal points of the magnetic pistons in UT and OT during the field expansion process and the return process, i.e. remains constant.

Equal space process (field expansion with pressure build-up):

The very fast field expansion by opening the FM takes place at a constant volume (field modulator when TDC opens at a constant volume

Volume until the crankshaft has turned from 0 ° KW to 90 ° KW). Conditions in the same space process with field expansion (Fig. 136):

- The cylinder contains only fresh field and no residual field from the previous work cycle - Complete energy conversion of the field

- Lossless field charge changes

- No quantum field heat transfer on the cylinder

- Constant volume during the pressure build-up (FM when TDC opening) and pressure reduction (FM at TDC closing) process - The pressure build-up space must be field-tight Process on 1 → 2 equilibrium = idle stroke without field pressure (FM closed) =

Movement from UT → OT, no quantum field heat supply (isentrope) 2 → 3 field pressure build-up = opening of the FM → pressure increase with constant volume (isochore) * field energy supply, i.e. the magnetic piston remains in TDC for a short period of pressure build-up while the KW rotates from 0 ° to 90 ° = TDC → TDC (quantum field heat supply)

3 → 4 working (relaxing the field pressure). The high pressure field expands and moves the magnetic piston from

OT '→ UT, the initial volume has been reached again. No quantum field removal

4 → 1 field pressure reduction = closing of the FM. The process takes place at constant volume in UT-Positiorϊ, while the KW of 180 ° after

270 ° turns = UT → UT. Due to quantum field removal (= cooling), the field pressure drops until the initial field pressure is reached again in point 1. Energy gain, energy loss

The area in the diagram (Fig. 136) with the corners 1-2-3-4 represents the work gained during a work cycle. The increased time can be increased by increasing the compression ratio. The work gained could be greater if the FM did not close in point 4, but only after the field had reached

Output pressure in point 5 has relaxed (magnets should have a stroke h → ∞). In practice, however, this is not possible because the extension of the field expansion is connected with the increase in the stroke (long stroke motor). The area 1-4-5 thus results in the lost work.

Compression ratio = (displacement + compression space) / compression space ε = (V _c + V _h ) / V _c

Compression space = FM air gap d or interface G between the pole pieces PS

Actual p-V diagram

In reality, the equal space process is not as ideal as that

Conditions can not be met. The pressure curve during the 2 strokes (2 magnetic pistons + 2 FM) one

Working cycle can be done with a piezo-electric indicator on the

Record the trainer on the running FK generator / motor and make it visible as a curve on the screen. The differences from the ideal p-V diagram can be clearly seen (Fig. 136).

5. Tax chart

If you open the opening and closing times of the FM in degrees of

Crankshaft revolutions, you get the control diagram (Fig. 137). a) Symmetrical control diagram → detail b) Asymmetrical control diagram → detail It gives an overview of the head angles of the FM. The opening (0 ° -90 ° KW) and closing angle (180 ° -270 ° KW) of the FM is always constant - however, the FM is not always fully opened within this angle segment (variable field force) and the shape of the control cams is also variable (Opening / closing profile /

-Speed) and are determined by tests for each type of construction so that the FK generator delivers the best possible performance. Since this is not possible over the entire speed range, the FK generators are equipped with adjustable opening / closing cams. The opening and closing angles of the FM can be changed by a certain adjustment angle (variable timing: if necessary, open the FM later or close it earlier). The control angles of the individual FK generators differ from each other, so that there is a separate control diagram for each FK generator. As a rule, the higher the angle from the opening to the closing of the FM, the larger the angle

Engine operating speed.

6. Magnetic cylinder numbering, FM opening sequences 6.1 Magnetic cylinder numbering. The designation of the individual magnetic cylinders of a (combustion)

Generators / Motors is standardized. The counting of the magnet cylinders begins on the side opposite the power output side. With V, VR and boxer engines you start with the left row of magnetic cylinders and count each row (Fig. 138).

6.2 FM opening sequence and opening distance for multi-cylinder FK generators (Fig. 139)

FM opening sequence It indicates the order in which the work cycles of the individual

Magnet cylinders of an FK generator follow one another.

FM-opening distance

It specifies the distance in degrees of crank angle between the work cycles or the FM openings of the individual magnet cylinders. At a

FK single-cylinder generator requires only one FM opening (FM = open) per 1 crankshaft revolution, the FM opening distance is therefore 360 ° KW (ignition distance for a 4-stroke combustion engine 720 ° KW). FM opening distance = 360 ° KW / number of cylinders The more magnetic cylinders there are, the smaller it becomes

FM opening distance, the generator run becomes quieter and the torque output more even. The FM opening distance results from the corresponding magnet-cylinder arrangement and the appropriate position of the crank crank 2. Field semiconductor mulators

1. Technical field to which the invention relates. According to the invention, field semiconductor modulators belong to the field of

Magnetronics.

Magnetronics complements the field force generator ("generation of energy") because the technology of the magnetronics components reduces energy consumption. A field force generator, field force motor and connecting rod length variator can be integrated on a chip.

Magnetic / electrical field semiconductor components and application of the principle of M / E diodes, M / E transistors, M / E thyristors, M / E IGBT to the M / E semiconductor field modulator ( FM):

Magnetronics is a completely new technology and discipline in electromagnetic R&D, production, marketing and application. Since fields cause forces and the field flows are directed, separated, regulated, amplified or switched etc., all field semiconductor components belong to "field force machines" according to the invention, even if the field forces / flows of the field sources are primarily not for generating work, but only for modulation,

Gain, switching, direction, etc. of the primary field of a field circuit can be used!

Comparison of the technologies majority particles: electrons majority particles: magnetrons

= Charge carrier = magnetization carrier

Electrical engineering Magnetic engineering

Electronics magnetronics particles and quanta

In previous electrical engineering and electronics, electrons and electron holes flow as electrical current as charge carriers in the conduction band. This current flow generates great heat when the charge carriers collide with the lattice atoms of the conductor / hat conductor crystal, which also entails a large loss of energy.

The M-conductors, M-semiconductors and M-insulators are divided into magnetics and dimagnetics, whereby all crystalline and amorphous substances belong to the Ferro group (including Ferri): Fe, Co, Ni and the lathanoids Gd, Tb, Dy, Ho, he. The decisive factor for ferromagnetism is the relative atomic distance - regardless of whether it is crystalline or amorphous substances.

Ferromagnetism therefore also shows substances such as MnCu ₂ AI, Cu ₂ MnSn, MnBi.

The following particles are effective in magnetronics, for example magnetons and quanta (= magn. Field quanta = magnetrons): a) Magnetic flux quanta Φo as energy field quanta of magn. Field (= quantum, are also called photons). b) Magnetons are spin moments of the electrons fixed locally in the atom, mostly on the 3d shell; from this follows Bohr's Magnetonenza /? / ais the outwardly effective spin moments of the atom (other magnetic moments, eg orbit and nuclear moment, are negligible). There are also magneton holes = missing spin moments, they behave like positive magnetic particles in the lake of negative magnetons. c) Magnetrons = bonds and magnetron holes = bond gaps, the latter behave like positive quanta and flow as a magnetic current l _m or flux Φ through the solid.

M-Semiconductors

Magnetic semiconductors are e.g. Cobalt and or dysprosium, which are linked to foreign atoms, e.g. Co + Ni or Co + Fe, are doped. The co-semiconductor crystal behaves analogously to the electrical case, e.g. Silicon: The bonds between the valence electrons (3d) are undisturbed, only the foreign atoms and an external magnetic field as well as heat bring the decisive behavior. With these M-semiconductors, M-components such as M-diodes, M-transistors and M-thyristors etc. for the Lefstungsmagnπetronik (e.g.

M-IGTB) with analog behavior.

B. Relevant state of the art / technical problem to be solved

Magnetronics / magnetic field semiconductor devices & M / E semiconductor field modulators open up new areas of application:

According to the invention, instead of electron conduction in the electr. Conduction band now magnetic flux quanta in magn. Conduction band used. In this respect, there are now magnetrons (couplings) and magnetron holes (coupling holes) in the magnetic conduction band analogous to the electrons and electron holes.

C. Presentation of the Invention 1. Overview of Operation

Magnetic semiconductors, magnetic impurity lines

The magnetically semiconducting material is achieved by doping a dimagnetic = ferro / ferrimagnetic field non-conductor (or dielectric ferro / ferrieelectric field non-conductor). As a base crystal e.g. Cobalt or dysprosium can be used.

Nm semiconductor

The highly pure co-crystal can be doped with nickel, for example. A Dy crystal can also be doped, for example, with holmium or with erebium. Consequence: Magnetically negative semiconductor N _m .

P _m semiconductor

Or co-crystal is doped with Fe. Or Dy crystal doped with terbium or gadolinium. Result: magnetically positive semiconductor P _m . The doping of, for example, cobalt or dimagnetic eg Fe0 ₂ or CoO ₄ with lathanoids is possible. The magnetic interference line with magnetrons based on

Magnetons (μβ ^" ) or with magnetron holes based on magneton holes (UB ⁺ ), analogous to the electronic principle with N _e and P _e , are created in the magnetic system N _m or P semiconductors. Magnetic semiconductor components (or electrical field semiconductor devices)

Magnetic components are e.g. M diodes, M bipolar transistors

(M-BT), M-field effect transistors (M-FET), M-thyristors, and also

M-IGBT, etc.

Their structure is analogous to the electronic semiconductor components with the difference that the mode of operation is based on magnetic flux quanta

(or electrical flux quanta) is built up. All can also be electronic

Circuits are converted analogously into magnetic circuits (magn. Voltage, magn. Flux).

Magnetic bipolar transistors are switched at the operating point. M-BT and M-FET can also be designed as magnetic amplifiers.

Magnetic semiconductor field modulators for FKG

There are magnetic field conductors, magnetic field semiconductors and magnetic field non-conductors / insulators (dimagnetics) (also applies in the electric field with dielectrics). The core principle of the field modulator is the control of the conduction of the flux quanta by a) a junction - conductivity modulation (M-BT), or b) the control of the flux by a magn. Field across the channel (M-FET) = channel cross-section modulation.

Both principles (conductivity modulation and channel cross-section modulation) can be combined in the M-IGBT field modulator.

In the normal field modulator, the flow control (conductivity or cross-sectional modulation) takes place in a magnetically conductive material. In the

Magnetronics replaces the magnetically conductive material with magnetically semiconducting material.

Magnetic semi-conductor field modulators can be used in the field force generator.

2 Flow line / flow variation / flow control 2.1. Essential sizes

Electronic system Magnetronic system 1. Electric charge «Magn. Charge → magnetization displacement flux magnetic flux Q * j ^" l (t) dt [As] Φ = BA [Vs]

2. Shift density «Magn. Flux density (induction) D-ε-E [As / m ² ] B- -HrVs / m ² ] 3. Electrical current - Magn. Flux (strength) 'e _s = Uo R _e [A] (l _m =) Φ = Θo Rm [Vs] 4. Electrical voltage ~ Magnetic voltage U _e = -JE (s) ds [ V] (U _m =) Θ = JΗ (l) dl [A]

5. Electrical resistance «Magnetic resistance of a homogeneous magnetic core

Analogies between electrical and magnetic circuits

Ohm's law of the magnetic circuit: The magnetic circle is the space in which the magnetic field as a whole spreads. The quantities of magnetic flux Φ and flooding Θ which are characteristic of the magnetic circuit are closely related and correspond to the conditions in the electrical circuit.

In the magnetic circuit of a magnetic conductor / semiconductor, electron / electron holes are created by magnetic particles = magnetons / magnetons and holes and their macros (domains etc.) as well as flux quanta - magnetrons (M ^_ ) ( ^s bonds) / magnetron holes ( M ⁺ )

(= Bond gaps), the exchange interaction quanta (→ exchange integral) between the magn. Systems replaced.

The magnetons (M ^~ ) and magneton holes (M ⁺ ) in the M semiconductor do not migrate (they are stationary in the atomic lattice on the inner unfilled ones

Shells (FeCoNi 3d4s, Lathanoide 4f5d6s) localized (note thermal vibrations), only the flux quanta = magnetrons / flux quantum holes = magnetron holes, spread with phase group velocity in the solid if the (spontaneous) polarization and coupling (binding) = exchange interaction is produced and they come out when there is a hierarchical chain of directed bonds (in the case of crystals polarization of the crystal grains (Weissche districts)).

2.2. Classification of ferromagnetic M isolators, M semiconductors, M conductors

Magnetic field conductivity (flux quanta) μ _r -μo, permeability number μ _r . Electrical system (flux quanta) Magnetic system (flux quantum)

E-insulators = E-insulators M-insulators - M-insulators in a magnetic field in an electric field

"In non-conductors (isolators) the Im. Non-conductors (magn. Isolator) charge carriers are not free to move. The magnetization carriers are therefore the inside of a (magnetron = flux quanta) non-conductor is not free to move in the electric field. That is why it is also field-free The field, as it were, penetrates the interior of a magnetic non-conductor in the magnetic field through the insulator, and the field → dielectrics, as it were, extends through the magnetic insulator → dimagnetics.

Electrical capacitor = * Magnetic capacitor

"If a dielectric in a If a Dimagnetikum placed in an electric field, so does a magnetic field brought, so the electric field strength increases the vacuum to the ε _r th part of the vacuum to the μ _r th off with respect to the opposite magnetic field strength , while the capacitance C _e decreases, while the magnetic capacitance C _{m increases} the introduction of the dielectric by the introduction of the dimagneti by ε _r . " cumulative increases _r . ε _r = permittivity number or relative _r = permeability number or relative

Dielectric number (dimensionless) Dimagneticity number (dimensionless)

Value ε _r always ≥ 1. Value μ _r always ≥ 1. ε = permittivity = εo-ε _r = electrical μ = permeability = μ μ _r = magn.

Field conductivity. Field conductivity.

Factor χe = electrical susceptibility factor χ _m = magn. susceptibility

Xe = (ε 1) Xm = (r-1)

For dielectrics ε, 1 and therefore for dimagnetics μ _r > and χ _β > -0. For vacuum εH = 1 or χ _β = 0. therefore χ _m 0. For vacuum μr \ εr = Ds / Do = ε / εo or χ _m = 0. μ ^s B ^ Boμ _r = μ / μo

- dielectrics = electr. Non-conductor - Dimagnetika - magn. Non-conductor ε _r always ≥ 1, Xe 0 μ _r always ≥ 1, χ _m 0 (→ 4-302, 12-70) - diaelectric substances (repulsion) - diamagnetic substances (repulsion) μr ^ 1, Xm ^ 0

- Paraelectric substances (attraction) - Paramagnetic substances (attraction) _r 1, X _e 0 / 1. Xm 0

- antiferroelectric (neutral) - antiferromagnetic (neutral) εr =, Xe = 0 - unelectric _/ "r = 1, Xm = 0 = non-magnetic

- ferroelectric materials (attraction) - ferromagn. Substances (attraction) ε _r »1, Xe ^ 0 Mr ^^ Xm ^ O

- ferrielectric materials (attraction) - ferrimagnetic materials (attraction) E / M systematics conductivity materials permittivity number permeability number Ordered by increasing magnetic field conductivity / permeability

1.Dielectrics ε _r Dimagnetika (μ _r → w) Each insulator is ultimately a bad conductor, note dielectric or dimagnetic losses δ (with> ε _r or> μ _t →> δ ₀ , with - ε _r or <μ _r → - δ ₀ ).

1.1 Antiferroelectric Antiferromagnetic r = 1 unelectric μr ^ l uπmagnetisch Cr, FeO _2l C0O4, NiO t.2 Ferroelectric Ferro agnetisch εr = ≥1 ... 10 ⁶ μf = ≥1 ... 10 ⁶ strong electrical strong magnetic Fe, Co, Ni, Gd, Tb, »Dy.Ho, Er t paraffin 2.2 NdFeB (hard) 1.05

^ m water 81

^ ε _r ceramic (NDK - Type-IK) 10-200 AINiCo450 3 ßτ ceramic (HDK = Type-Il-K) 700-10 ⁴ FeCoVCr IO i Ferroelectric type Ill cond. - ε _r disc (e.g. barium titanate), the 3% SiFe 6-10 ³

> μ _t due to reduction and oxidation Fe pure 1.5-10 ³ re-processes Semiconductor barrier layers CoFe 1-10 ³ Rm, which act like a dielectric Mumetall 5-10 ⁴ (voltage-dependent C _e ) amorphous CoFe 1, 5- 10 ⁵

1.3 Ferrielectric Ferrimagnetic ε _r = 3 ... 10 ³ μf = 3 ... 10 ³ strong electrical strong magnetic E ferrites M ferrites: (→ 12-73) n (MeO) M (Fe ₂ O ₃ ferrites (hard ) 1.3 ferrites (soft) 1-10 ³

2. Diaelectric diamagnetic ε _r - <1 repulsion from μ <\ repulsion from the electric field magnetic field Cu, Si, Bi, Pb, H ₂ O

3. Paraelectric Paramagnetic ε _r 1 attraction from μ _r > 1 attraction from the electric field M-Feid: AI, Pt, Ta, air 2.3 Magnetic semiconductors

2.3.1 Fundamentals and basic terms of magnetic semiconductors

E-particle - electron e ^" Electrical elementary charge as a Vaien- / conduction electron

E-particles - defect electron Electron missing in the atom = hole from outer shells (→ valence / conduction electron hole) (acts like positive charge e ⁺ )

E-Quant - electron bond or electron bond gap

E-particles - movement / conduction of electrons or electron holes

M particles - Bohr's magneton μe ^~ (for e-) and μs ⁺ (for e ⁺ ) Magneton number = unit of measurement for the sum of the local elementary magnets (the electron spin moments) → number of magnetically active electrons of the magnetically uncompensated inner electron shell per atom. These are only a necessary but not a sufficient prerequisite for ferromagnetism (saturation polarization).

M-Quant - Magnetron M ^" at μβ ^~ = coupling (binding) between two spin moments = elementary unit of measurement (field quanta) and quantifiable → flux quantum ΦQ.

M-Quant - Magnetron hole M ⁺ - Defect magnetron at μe * Missing coupling between two spin moments

M quanta - movement / line M ^" , M ⁺ In magnetic semiconductors instead of electrons and electron holes, magnetic bonds = magnetic couplings (magnetrons) and magnetic holes (magnetron holes) are moved. → Magnetic semiconductor components, eg M diode, M -Transistor, M-Thyristor, and M-semiconductor field modulator

M particles - atom magneton Aμβ ^" and atom magneton hole Aμs ⁺ sum = number of spin moments μβ in the atom (not bonds)

M-quantum - atomic magnetron AM ^" binding of the sum of the spin moments - coupling via exchange interaction to the relative atomic distance (→ Bethe-Slater curve) (-effect of force by overlapping the electron shells and the associated exchange of electrons among neighboring atoms or ions). Coupling forces cause atomic magnets to stand in parallel individual atoms. The coupling / binding / exchange interaction is the sufficient prerequisite for ferromagnetism. In magnetronics, the magnetron is a coupling "sluggish" = ferro-magnetization grapple. Note spin position and coupling with femagnetism. M-quantum - atom-magnetron hole AM * = missing coupling / binding "carrier" = defect-atom-magnetron - defect-spin-moment coupling group 2.3.2 Magnetic field conductivity of solids

Number and magnetron mobility (mobility of the exchange interaction) and spontaneously magnetized domains in the different substances determine their specific suitability for conducting the magnetic current (magnetrons * flux quanta).

M conductor (μ≥ 1 → max) M conductor conductor M non-conductor = M isolators (μ≥ 1)

Ferromagnefic cobalt + FA ferromagnetic

Ferrimagnetic dysprosium + FA ferrimagnetic = host crystals antiferromagnetic μ = 1 FA = foreign atoms

Magnetic metals, magnetic insulators, magnetic semiconductors Magnetic conductors (→ Magnetikum)

In magnetic metals (ferromagnetism) the number of bound magnetic flux carriers (electron spin moment coupling of the inner uncompensated shells = elementary magnetron) is large, but the magnetron mobility (shift / rotation of spin moment coupling group = domains) is different , depending on hard (heavy) or soft magnetic (light).

Magnetic isolators (→ dimagnetic) In magnetic isolators (→ paramagnetism) the number of spin couplings bound by exchange interaction = magnetrons / magnetron holes is practically zero (Fe single atom = paramagnetic) and accordingly the magnetic conductivity due to lack

Spin moment couplings (= magnetrons) are vanishingly small. The state of non-conductivity also occurs when the Curie temperature is exceeded, note the μ-T characteristic. Magnetic semiconductors

The magnetic conductivity of magnetic semiconductors lies between that of magnetic metals and magnetic insulators, it is strongly dependent on the pressure (influences the mobility of the magn. Flux = = magnetrons), temperature (number and mobility of the magnetrons, external field radiation (number of magnetrons) , and fed

Foreign substances (number and type of foreign magnetrons / M holes). Doping with foreign atoms (FA)

The magnetic conductivity of magnetic semiconductors can be defined and localized by doping (controlled incorporation of magnetically effective foreign substances). This is also the basis of a magnetic field semiconductor field modulator as a component of the FKG.

2.3.3 Specific magnetic resistance / conductivity

Magnetic conductivity permeability μ = μ _r μo:

Like the ohmic resistance R _θ , the magn. Resistance R _m proportional to the length of the magn. Conductor (l _m = average length) and inversely proportional to

Cross-sectional area effective.

The specific magnetic resistance of magn. Semiconductors lies between the magn. Head and that of magn. Dielectrics. It is strongly dependent on the doping with foreign atoms, the temperature and the magnetic field incidence H.

(= electromagnetic wave with Poynting vector S = E x H, component H effective) dependent.

Specific magn. Resistance p _m = 1 / μ [p _m = A Wb mm / m] magn. Conductivity / permeability μ = 1 / pm = μoμ _r = B / H magn. Resistance R _m = (1 / μ) l / A = Θ / Φ [A / Wb = A / Vs = 1 / Ωs]

Bohr magnetons

Bohr magnetons → magn. Effective electrons per atom (= number of magnets per atom) cause magnetization, but do not migrate 1): Magnetic moment "The orbital moment contributes practically nothing to the magnetism of the atom, but only the spin moment of the electron. The unit of this moment is called Bohr's magneton On average, the ferromagnetic elements have a characteristic number of n magnetons (μβ ^" ) per atom. This can be determined experimentally using neutron diffraction. The saturation polarization J _s and saturation magnetization M _s can be calculated from this. Bohr magnet, the size is p _m = 9.2742-10 ^{~ 24} on the ^2nd Multiplied by the field constant μo you get μ _B ^" = 1.1654-10 ^{" 29} nm. Element n iron -2.218 (negative because of e ^" von e ^" ) cobalt -1.714 nickel -0.604 The magnetic moment has the dimension Am ² , the magnetization as magn. Moment per volume unit the dimension Am ² / m = A / m (same unit as the field strength).

Macro magnetons a) In crystalline substances: crystal grains (macros) with their directed atomic moments = spontaneously directed via magn. Coupling / binding forces of the atoms (spin moment coupling / binding). Permeability depends on crystal energy, magnetostriction, structural parameters such as crystal grain size, number and type of lattice defects and foreign bodies, internal stresses and others b) In amorphous substances: atomic moments are directly effective. Permeability depends on local anisotropy and the stresses caused by magnetostriction in addition to surface roughness. Macros in alloys «Weiss districts a) In crystalline matter: Weiss districts (region of spontaneous spin alignment (= grain = crystallite) = preferred direction of the atomic magnets (magnetons) due to forces between the spontaneous magnetization and the crystal lattice = magnetic anisotropy forces = crystal anisotropy) depend solely on the coupling / binding forces between the atoms without the participation of an external magnetic field. → There are no comm boundaries for single crystals and the unit cells (EZ) are parallel to each other. An elementary cell is the smallest volume, through whose identical three-dimensional repetition the crystal lattice is built. → grain = crystallite - Weissscher district = magn. Preferred direction → Macro unit of the electron moments / atom / atom layer / unit cell / crystal. Processes: 1st shift + 2nd rotation. b) In the amorphous material (has no ordered spatial lattice, ie no crystal grains and no grain boundaries): Weiss's districts depend solely on coupling / binding forces between the atoms without the participation of an external magnetic field. A certain order exists only in the close range. Model: Metal atoms are arranged in dense spherical packing (tetrahedral globular cluster (cluster)); Order and symmetry are not so high and packing is not so dense and space-filling that a crystal could arise. → Macro unit of the electron moments / atom / atom layer / unit cell (= sphere packing). Processes: almost only turning processes since there is no anisotropy constant. Spin coupling of neighboring atoms → coupling forces, distance of the atoms

→ exchange interaction (Bethe-Slater curve) → ferromagnetism → Weiss districts primarily magnetized by coupling forces (in crystalline and amorphous substances) (synonym: coupling = bond). Flow quantum macros = magnetron macros

The magn. Energy of the magnetons is localized in the space between the magnetons by magnetrons and spreads through river guan Φ ₀ (= magnetrons). The magnetrons form macros through exchange interaction, which in turn form magnetron macros - according to the hierarchical one

Order in the ferro- / ferrimagnetic solid. The higher the magnetic conductivity, the better the (macro) magnetron mobility = spread of the flux quanta (quantum macros according to the hierarchical order of the macros atoms, layers / clusters, single crystals, crystallites, ...). For magnetic particles = magneton macros: Shifting and turning processes. Very high mobility / spreading of the magnetron macros (atoms, atom layers, element cell, single crystal / crystallites) with magnetic liquid (see ion transport).

Systemetics of magnetic particles and quanta

A. Scheme of magnetronic system structure according to solid-state hierarchy

Parallel spin alignment in: 1) Electron spin moment = Bohr magneton = μs ^± = Pm ^± -μo. → Magnetron ¹ = flux quantum.

2) Aton ion magneton * Bohr magneton number → Atom magnetron AM * = flux quantum. Magnetic Jon l _m * at Aμe *.

3) Crystalline / amorphous atom-ion unit cell

4) Atom layer

5) Weϊssscher district (crystalline or amorphous) 6) Solid from n Weiss districts

B. Structural details

1. Negative elementary magnetization = magneton = μβ ^~ (cause negative electron charge e ^" → negative spin moment μ _B ^~ ) = negative moment of an electron (= μ _B ^~ ) = valence magneton

1.1 Magneton hole (missing magneton = μe ⁺ )

(Cause positive electron charge e ⁺ or missing charge → positive spin moment μe ⁺ ) = positive moment of a magneton (→ positive elementary magnetization)

= equivalent lack of magnetization / magn. Moment = valence magneton hole

1.2 Magnetrons (M ^" ) / Magnetrons Hole (M ⁺ )

The field relations Z-quanta = magnetrons / magnetrons-solvers are negative or positive elementary flux quanta

= magnetic energy in the space between the magnetons or magneton holes. → Line magnetron / Magnetroπ hole 2. Negative magnetization atom

= Atom magneton Aμ _B ^"Ä n-μ_f = negative moment of the atom

2.1 Positive magnetization atom = atom magneton hole Aμs ⁺ = n -μe ⁺

= positive moment of the atom = equivalent lack of atom magnetization 2.2 Atom Magnetrons (AM ^" ) / Atom Magnetron Holes (AM ⁺ ) - Negative or positive AM flux quanta

= magnetic energy in the space between the atom magnetons / A magneton holes.

2.3 Magnetically negative or positive ions Im *

2.3.1 Magnetically positive ion

In general, only spin electrons are generated

Magnetons (μe ^~ ) and magneton holes (behave like positive magnetroes (μ _B ⁺ ), as well as their associated magnetrons (bonds) and

Magnetron holes (bond gaps), the latter also behave like positive magnetrons).

If 1 AM leaves ^" as line magnetron Aμs ^" , a bond is missing

→ this creates a magnetically positive ion (l _m ⁺ ) T _m ⁺ = magn. positive ion: If an atom lacks magnetrons (bonds), it is magnetically positively magnetized and an N _m field semiconductor is formed.

2.3.2 Magnetically negative ion

If 1 AM ^" is missing as a line magnetron at Aμ _B ^" , it leaves a gap in the bond,

→ this creates a magnetically negative ion (l _m ^" ) l _m ^" - magn. negative ion: If the atom has more magnetron holes, it is magn. negatively magnetized, a P _m field semiconductor is formed. 2.3.4 Note with magnetic ions:

In the case of electrical ions l _e , the atom is absolutely electrically neutral if the

Electron number is equal to the proton number in the nucleus.

Ideal M isolator = magnetically neutral

With magnetic ions l _m , the atom is absolutely magnetically neutral if the Bohr number of magnetons in the electron shell = zero = magnetic

Zero level of the spin moments of the electron shell = ideal M isolator. The system is not logically the same as the electrical system, i.e. the magnetic moments of the protons in the nucleus; the clamping moments are much weaker than the spin moments and contribute almost nothing to the magnetization.

There are two levels in the magnetic system: a) The absolute level with absolutely negative or positive spin moments (Fe, Co, Ni has negative Aμβ ^" , because coming from negative electrons and in excess (on average, parallel to antiparallel moments). B) The relative level: If Aμe ^"of the atom is negative or positive in comparison to the surrounding semiconductor atom (eg Co) (→ magnetic impurity line), so that in relation to the Aμβ ^{" of} the crystal the Bohr magneton of the foreign atoms is smaller (→ l _m ⁺ eg Fe to Co → P _m conductor) or larger (→ l _m ^" eg Ni to Co → N _m conductor).

The magnetization or bond base is the magnetic crystal lattice (in the electrical case, the electron pair bond of the - electrical crystal lattice is the base). At very low temperatures, e-semi-conductors are electrical non-conductors = dielectric. With M semiconductors, the conductivity depends (exchange interaction due to

Coupling of the spin moments with relative atomic distance) also from the

Temperature ab, analogous to the non-conductivity in the e-semiconductor at <T, → dimension (Fig. 140 and 141).

A special fabric design can reverse this non-conductivity at low temperatures. (Fig. 141)

By increasing the temperature, the magn.

Conductivity increased, this creates bonds → free-moving line magnetrons are created (bonds = M couplings between the atoms).

In the case of the M semiconductor, the magneton pair bond = magnetrons; the

Atoms are held together with the magnetic component.

3. Aton ion elementary crystals crystalline / amorphous

Crystalline metal: atomic order = strictly periodic arrangement in space lattice = unit cell (different configurations) unit cell = order with space lattice. m lattice points of the space lattice with atomic elementary magnets, coupling through exchange interaction (<=> atomic distances) of neighboring spins → n effective elementary magnets <m lattice atoms Note unit cell magneton and magnetron amorphous metal: atomic order = randomly arranged unit cell = order only in the close range different configurations : = Tetrahedron or icosahedron with m corner atoms each S tetrahedron or S icosahedron form a globular cluster / cluster m corner points with atomic elementary magnets, coupling through exchange interaction (<= * atomic distances) of neighboring spins → n effective elementary magnets <m corner atoms Note unit cells -Magneton and Magnetron

4. Atom layer

→ Ferromagnetism unit cell (FEZ)

Cause = S unit cells (space lattice or cluster) → ALμ _B ^{± =} sn-μs * - FEZ min. S = 6 layers (S) = beginning of ferromagnetism.

Note with crystalline substances: order isotropic or directional order (anisotropic) with certain magn. Preferred direction (magnetic field annealing, etc.)

4.1 atom-layer magneton = negative atom-layer magnetization ALμs ^"

= negative moment of an atomic layer

4.2 Atom-Layer-Magnetoπ-Lσch = ALμs ⁺ = positive moment of an atomic layer 4.3 → ALM ^" Magnetron and ALM ⁺ Magnetron hole = exchange interaction of the FEZ

Negative or positive AL ^± / AC ^± flux quanta are the field relations / quanta = magnetic energy in the space between the ALM ^" or ALM ⁺ holes.

Because of the beginning of ferromagnetism, the ALM * emerge from the 6th layer as ALM ^± flow quanta and enable the ferro-magnetization of the crystals and thus the Weiss districts. 5. Weiss district (crystalline or amorphous)

→ uniform spin direction in the Weiss district (Marko spin moment)

Crystalline: Single crystal / Kristallkom (crystallite) from FEZ

Crystal grains - crystallites (consist of regularly over larger areas

(strictly periodic) arranged space grids Amorphous: random arrangement directly from the FEZ

6. Solid from n Weiss districts → Macro spin moment ^s Permanent magnet (PM) 2.3.4 M semiconductor crystal

Magnetic conductivity of magnetic semiconductors

A precise knowledge of the magnetronic rather than electronic structure of the solid is necessary. M-conductor type classification

M non-conductor: μ _r ≥ 1 to ^ 10 ⁴ , e.g. also hard magnetic. Fabrics with _r «1.06

M-semiconductor: μ _r 10 ⁴ to> 10 ⁵

M-conductor: μ _r 10 ⁵ to 10 ⁶ temperature-dependent M-semiconductors

M semiconductors are M nonconductors at a) low temperatures and form free magnetrons at normal temperature (= increased magnetic conductivity) b) M semiconductors with reversed temperature conductivity functions can be used in reverse function in the low temperature range.

Contrary to the electrical semiconductors, magnetic semiconductors are also magnetic conductors at very low temperatures if you design them like this (fabric design)! M-semiconductors → analog behavior like electronic e-semiconductors;

→ Behavior like anti-M semiconductor.

The conductivity of the magn. relative M-insulators can be added by adding M-foreign substances / M-foreign atoms in (M-semiconductor doping, in M-conductor alloys) or by external influences, e.g. influenced strongly by magnetic fields.

The base material used is a relatively magnetic "non-conductor" = M insulator, for example cobalt or dysprosium (etc.) as an M "insulator" atom, without free magnetic spin moment coupling, ie without free line magnetrons, ie a) at T Tc or b) used at a very low temperature (→ μ-T characteristic) Magnetic self-conduction by supplying heat or magn. Field effects are also generated in undoped M- "insulators" free magnetic magnetrons (= flux carriers = magnetization carriers): spin moment-spin moment-hole pairs (μ & → M ⁺ ), which lead to an intrinsic conductivity of the M- "insulator" (→ μ- T characteristic).

Ferromagnetic macro quanta ALM ^" and ALM ^{+ of} the atomic layer

Spin moment couplingZ-bond = not the spin moment alone (= M-particles), but the spin moment coupling via exchange interaction due to the relative atomic distance leads to

Ferromagnetism, i.e. M macro-quantum. These ferromagnetic M-macro quanta are the actual magnetrons, because they only cause magnetic conductivity at temperature T; if the bond is not there, then there is no magnetic current / flow from magnetrons or magnetron holes (also note the magnetic effect of the> atom magnets in the unit cell),

N _m doping m doping: incorporation of foreign atoms with a free magnetic spin moment coupling, ie the atom must have one magnetic spin moment more than the M "isolator" atom. Each built-in M foreign atom thus provides a free, "negative" spin moment and the associated bond

(= magnetic N _m coupling). The M "insulator" becomes magnetically N _ra -conducting. Pm-doping

P _m doping: incorporation of foreign atoms with a missing spin-moment coupling, ie the built-in foreign atom creates magnetic coupling gaps ("positive" magnetic "holes" = magnetron holes), because the foreign atom lacks a complete coupling with the neighboring atom via exchange interaction " positive "spin moment and associated P _m bond.

This bond gap is called a magnetic hole or defect magnetron. M holes are movable in the M "lsσlatσr". In a magnetic field, they move in the opposite direction to the magnetron couplings. M holes behave like free positive M couplings. Any built-in

M foreign atom thus provides a free, positively magnetized defect magnetron (magnetic hole). The magnetic "insulator" becomes magnetic P _m -conducting.

PmN _m transition / boundary area in magnetic semiconductors The boundary area between a P _m -conducting zone and a

The Nm-conducting zone in the same M semiconductor crystal is called the P _m N _m transition.

PmNm transition without external magnetic tension There are many magnetic holes (O) in the Pm area, extremely few in the Nm area; there are a lot of magnetrons (•) in the Nm area, extremely few in the P _m area. Following the concentration gradient, magnetic magnetrons (flux quanta = magnetization carriers) diffuse into the other area (magnetic diffusion currents / flows). Due to the loss of magnetic holes (coupling / binding gaps) the P _m region magnetizes itself magnetically negatively; due to the loss of magnetic couplings / bonds, the Nm area magnetises itself magnetically positively.

This _creates a magnetic voltage (diffusion voltage) between the P _m and N _{ffl regions} , that of the magnetic

(Coupling / binding) carrier migration (= magnetron migration) counteracts.

The compensation of magnetic holes (= magnetron holes) and magnetic couplings (= magnetrons) comes to a standstill. Result: At the P _m N _m transition there is a moving one

Coupling carriers) depleted, magnetically poorly conductive zone, the spatial magnetization zone or barrier layer, there is a strong magnetic field in it. P _m N _m transition with external magnetic tension (Fig. 142)

Blocking case (1): Magnetic negative pole (S) at the P _m area and magnetic positive pole (N) at the Nm area widens the magnetic space magnetization zone: As a result, the magnetic current flow is blocked except for a small remainder (M blocking current / flow), which comes from the minority magnetization carriers.

Passage case (2): Magnetic positive pole (N) at the P _m area and magn. The negative pole (S) at the Nm area breaks down the barrier layer. (Coupling / binding) magnetization carriers (= magnetrons) flood the P _m N _m transition, and a large magnetic flux flows

Current / flow in the forward direction.

M breakdown voltage: magnetic voltage in the reverse direction, from which a slight increase in magnetic voltage causes a steep increase in the magnetic reverse current (flux).

Cause: Detaching bound magnetrons from the crystal lattice in the spatial magnetization zone as a result of high M field strength or as a result of impacts of accelerated magnetrons that knock other magnetrons out of their bonds in the inner electron shells (magnetic holes (bond gaps) because there are no coupling spin moments), which leads to Avalanche-like (coupling / binding) magnetization carrier propagation (= magnetron augmentation) leads (magnetic avalanche breakthrough). 2.3.5 Atomic structure

M semiconductors form a crystal lattice. Two M-semiconductor atoms have n common pairs of spin moments (= magnetons due to unsaturated electrons), which form a ferromagnetic material at T-Tc due to the coupling forces of the spin moments from six atomic layers / layers (for crystals).

Bohr magneton number n per atom = Aμ _B ^~ :

Fe per Fe atom of six 3d electrons averaged -4.1 in parallel and -1.9 in antiparallel direction, so that -2.218 remain effective outside, therefore Aμβ ^" Co = -1.714 per atom effective to the outside (negative because of μ _B ^" of e ^" ) Ni = -0.604 per atom effective to the outside "

→ Electron spin moment binding through exchange interaction with the spin moments of the neighboring atoms.

The M-element semiconductors have e.g. in the case of cobalt 3d7 Vaieπz magnetons (= spin moments) which, with the magnetons of the neighboring atoms, largely do not have a magn. Magnetron pair bonds (couplings through exchange interaction) enter because this large part of the electron shells in the atom is already filled.

The unfilled electron shells / orbitals, ie the magnetons Aμβ ^" (cf. effective Bohr magnetons) externally by magnetron magnets, can form couplings and thereby generate the spontaneous magnetization.

Atomic moments are uncapped at temperature T -Tc, the individual is paramagnetic.

By directed energy supply (H-field) single "free" magnetons can be aligned (polarized) and coupled with the T-Tc

Consequence that these "free", in the single atom unsaturated, now outwardly effective magnetons, in the crystal the coupled and directed coherent superposition, by function-dependent addition of the magnetrons (M influence function in the substance) with the "free" magnetrons of the neighboring atomic moments , cause.

In the magnetic band model, this polarization, coupling / binding and superposition process (in the hierarchy also affects the crystallites) corresponds to the elevation of magnetrons from the M valence band (MVB = unpolarized, uncoupled, not superimposed, not added in the far field

Magnetrons → non-conductive) into the M-conduction band (MLB = conduction band = permeability band = polarized, coupled, superimposed, magnetrons added → far) in the far field). The increase in the magnetic conduction band arises a) by lowering the temperature T ^ Tc, or b) raising the temperature in the M line range with T- ^ Tc, i.e. the M conduction band is temperature-dependent. Does the atom have excess externally effective magnetic

Moments, it is magnetically negative (analogous to an electrically negatively charged ion) → magnetically negative ion = l _m ^~ .

Missing magnetic moments (lack) analogously means magnetically positive ion = l _m ⁺ . The missing effective magnetons will be

Defect magnetons or magneton holes called. They behave in the lake of negative magnetons like positive magnetic particles (positron magneton). The same applies to the magnetic exchange interaction by magnetrons and magnetron holes as magnetic flux quanta / flux quantum holes (defect flux quanta) 2.3.8 Magnetic self-conduction

Below the Curie temperature there is magnetic conductivity (high permeability) in the M-semiconductor. Below this temperature Tc, the magnetization carriers = flux quanta Φo = line magnetrons ^{1) are} free to move, i.e. they can spread, overlap and add coherently ²⁾ if the atomic magnets (spontaneously) are parallel, i.e. polarize in the near and far fields and through exchange interaction directionally coupled and thereby form a conduction band. 1): In the electrical case electrons = charge carriers = conduction electrons in the conduction band.

2): Coherence: If waves ^{a, b} ) are superimposed, between which there is a fixed phase relationship, then their amplitudes add up according to the sign (→ ESR). a) Coherent overlay coherent = (Aι + A ₂ ) ² b) Incoherent overlay incoherent = At ² + A ₂ = lι + l ₂ - local coherence - temporal coherence: coherence time, coherence length

Magnetic circle

If the field cross-section A is given and this is penetrated at right angles by the river Φ, then the magn. Flux density B = Φ / A. Especially when there are air gaps, part of the

Field lines outside field cross section A runs. The resulting stray flux Φs reduces the total flow ΦQ and applies to the useful flow Scattering degree or scattering factor O = ΦG / ΦN (Fig. 143). → Shear the magnetization curve, flux density / M current density for a given flow / M voltage.

Note in the following: a) the technical direction of current (l _m ) Φ = + → - magnetrons M ^" flow from the N-pole → S-pole magnetron holes M ⁺ flow from the S-pole → N-pole b) physical behavior (l _m ) Φ = - → + magnetrons M ^" flow from the S pole → N pole. Magnetron holes M ⁺ flow from the N pole → S pole

Leϊtungs process = transport / expansion of the magn. Energy A magn. Applied to the M semiconductor or M conductor. Voltage (Θ) - and thus a magnetic field - drives the (spontaneously) polarized negative magnetron field quanta M ^" (with physical direction) from the minus pole (S = ^" ) to the plus pole (N = ⁺ ), with functional addition of M ^" on the plus pole; reverse flow with technical current direction (Fig. 144). Magnetization (= coherent addition of the atom / electron moments) due to the parallel atom magnets, which are caused by the coupling forces (possibly due to the influence of an external magn In the case of spontaneous magnetization, all the atomic magnets in the Weiss region are parallel without the influence of an external magnetic field, external field = coupling field = Σ atomic moments. Magnetic functional influence Magn. Functional influence as a function of the flux density with Bi <B _a (perfect magnetic influence, as in the electrical case on the surface, only with the Meissner-Ochsenfeld effect (superconductor currents on the surface shield the B field perfectly) In the area of the N pole (- +) the negative magnetrons M ^"are localized according to the field strength (see flow S = * N inside the ferromagnet) and are additively effective via a function (see also: a) neutral zone in the PM or b) with repulsive field zone in the FM. Flow: M ^"s (with magnetron S component of the moment = ^s ) is attracted by the north pole N ^{B +} (and the M ^N component of the moment in the north pole region repelled), the moments are polarized accordingly in the field and locally at the pole. ^" As soon as the magnetically active energy (= magnetrons of the negative magnetons) spreads in the direction of the positive pole (N) (due to the shift / rotation of the magnetic dipoles (atomic district polarization) by an external field) (the negative magnetization = negative atomic moments), add up the moments of the individual atoms (ie the energy of the negative magnetrons in the near and far field (→ magn. functional influence) within the district polarization or crystallite polarization) and leave a magnetic energy gap, a magnetic hole, in a functional magnetization context ie the magnetization (= magnetrons = energy quanta) spreads out from the atomic bond of the magnetons - otherwise there is no addition of the magnetrons (the quantum moments) elsewhere in the M-semiconductor and also no magnetic functional influence at the N-end or The S-end of the M-semiconductor The M-holes also contribute to the Stronr flux conduction on M ^" from a neighboring bond, such a magnetron hole M ⁺ (bond gap) can be filled energetically through an exchange interaction. At the point where it was (the magnetron), a magnetron hole is created again. The magn. Energy (magnetrons) is located in the space between the magnetons. This process is repeated continuously. The M-hole (M ^{+ SN} ) migrates (spreads through the whole body (M-semiconductor crystal) from the north pole (N = ⁺ ) to the south pole (S = ^" ). Coupling-Z binding forces Coupling forces cause the atomic magnets to stand in parallel → Force effect due to the overlap of the electron orbits (electron orbitals) and the associated exchange of electrons among neighboring atoms or ions. Cause material magnetism diamagnetism: closed electron shells Paramagnetism: unfilled electron shells Ferromagnetism: unfilled inner electron shells Antifenomagnetism: unfilled inner electron shells, very small atomic distances Ferrimagnetism: unfilled inner electron shells, spinel structure Result

For magnetronics, magnetizations that spread / migrate in space = magnetons (== magnetic energy quanta) are required as negative line magnetrons (M ^"SN ) or line magnetron holes (M ^{+ NS} ), analogously to electrons and electron holes that migrate in the electrical case The magnetrons spread in

Phase / group velocity.

Magnetrons M ^"SN = propagation and addition of the magn. Moments = energy flow / current Φ direction positive pole (N = +). Basis: magneton with negative moment μe ^" because of negative

Elemental charge.

Magnetron hole M * ^NS (= defect magnetron)

In the area of the S-pole (= -) the positive magnetrons M ⁺ - according to the field strength - are localized (see flux N = * S inside the ferromagnetic) and are functionally additive

→ magn. functional influenza:

Energy flow / current Φ: M ⁺ with N = π component is attracted by S = - and M ^{+ is} repelled, the moments SN and NS are oriented / polarized accordingly in the field

Basis of definition: Magneton hole with positive moment μβ ⁺ because of positive elementary charge or missing elementary charge

(Electron hole → spin moment hole). So there are two magnetic macro "particles" (μB ^~ , μβ ⁺ ) in magnetronics =

Magnetons or magnetron holes with their respective sign-oriented magnetic quanta magnetrons M ^~ and magnetron holes M *. (The symbol "m" is already occupied by the mass.) An applied magnetic tension spreads in the body

(M semiconductor crystal) the line magnetrons M ^" from the minus pole (S) to the plus pole (N) and the magnetron holes M ⁺ from the plus pole (N) to the minus pole (S). Free magnetrons and magnetron holes can only ever occur in pairs, so for the density of the magnetrons and magnetron holes _m = P _m

The total magnetic current (= total flux Φ) from the moments can be calculated as the sum of a magnetron current / flux and Form magnetron-hole current / flow, analogous to the electronic case with electron or electron-hole current. In magnetronics, the current / flow consists of field quanta Φ ₀ , the magn. Energy quanta, ie the magnetrons / M-holes in the space between the magnetons / M-holes.

2.3.7 Magnetic fault line

Adding a melt of a pure ferromagnetic semiconductor crystal (= no pure dimagnetic or pure M-insulator, because M-semi-conductors in conductivity at normal temperature between M-insulator and M-conductor) to add a very small amount of ferromagnetic foreign matter increases the magnetic field conductivity μ (of the flux quanta) strongly.

Basis: e.g. a) Co, or b) Dy. Fabric design at low temperature M non-conductor. Respectively. vice versa: At J _c the spin coupling is released; μ \ has a strongly material-dependent course → temperature dependence of the

Permeability; Saturation polarization J _s follows relative to the universal function.

N _m -directors

Example: M-crystal base 7-valent Co doped with 8-valent Ni = magnetically higher-value foreign atoms (with regard to Co-level) in magn. doping lower M-semiconductors: eg Co 3d ⁷ 4s ² = 9 electrons plus Ni Sd ^ s ² = 10 electrons → electron difference on 3d shell = + 1 Ni electron - +1 Ni magneton = +1 Ni magnetron. Definition: magnetons = magnetic particles with sign of

Charge, magnetrons - magn. Field quanta = river quanta with the same sign. Each magneton / magnetron has 1 "quasi-dipole" (N - + Pof. S - -Pol) spin moment. Note the number and difference of the electrons directed in time x parallel and y antiparallel with their moments on the 3d shell / orbital (and in the unit cell (space lattice / tetrahedron / icosahedron)) The Bohr magneton difference on the 3d shell is:

Co 1, 714 - Ni 0.604 = +1.11, i.e. slightly more than the electron number difference, i.e. also +1.1 magnetrons.

Doping also from the lathanoid ferro series Gd, Tb, Dy, Ho, Er, e.g. Dy 4f ¹⁰ 5d ° 6s ² plus Ho 4f ¹¹ 5d ° 6s ²

→ Electron difference on 4f shell - + 1 Ho electron or with a larger difference in valency: Dy 4f ¹⁰ 5d ^δ 6s ² plus E 4f ^1z 5d ° 6s ² → Electron difference on 4f shell = + 2 Er electrons.

Each magnetically higher-quality interfering atom (Ni doped in Co) brings magnetons (electrons with their spin moments) of the unfilled inner electron shells, which cannot form a magnetic bond with the nearest atomic neighbors because they are redundant in the base crystal. Yolk atoms introduce an M bond into the semiconductor crystal (eg Co), ie negative magnetrons are bonds.

This "free" magneton («negative spin moment of the negative electron) cannot be separated from its atom (3d orbital) as a particle by low directional energy supply (H field), but can be aligned (polarized) in its spin direction = energy direction, so that the field energy of the magnetrons spreads in the bond direction and can add functionally in the far field. The magnetons are fixed in the atom because they are localized on the inner shell (not dispositiv as with valence electrons on the outer shell, which can change the atom via the e-conduction band (particle transport)). The magnetons have a quantum transport (= flux quanta); i.e. the principle of the M-semiconductor is based on the transport of directional magnetic energy field quanta.

In this case the magnetic conduction is mainly based on the transport of the field energy of the negative magnetrons ("quantum of the negative spin moments of the electrons = majority carrier), ie the foot quanta and not on the transport of the electrons fixed in the atom. The M semiconductor therefore becomes N _m field conductive. This "freely" spreadable negative field energy of the line magnetron forms a magnetically positive Ni-Ion = M-Ni-lon ⁺ . The field energy = magnetrons of the bound magnetons, propagate in the solid with phase group speed. N _m field conductors contain "free" magnetrons (line magnetrons) as magnetization carriers «quanta of the negative spin moments of the electrons.

→ Magnetization through binding and polarization of the magnetrons.

P _m conductor

Example: M-crystal base 7-valent Co doped with 6-valent Fe: The magnetically 7-valent cobalt as M-semiconductor crystal can also be used

6-valent foreign atom can be doped, e.g .:

Co 3d ⁷ 4s ² plus Fe 3d ⁶ 4s ² → electron difference 3d = -1 Fe electron = -1 magneton = -1 magnetron Note the number and difference of the electrons on the 3d shell that are x parallel in parallel and y antiparallel in direction / orbital.

The Bohr magneton difference is C -1.714 + Fe 2.218 = -0.504, i.e. also -0.504 magnetrons (field quanta).

Or also Dy 4f ¹⁰ 5d ° 6s ² plus Tb 4f ⁹ 5d ° 6s ² → electron difference 4f = - 1 Tb electron

= -1 magneton - -1 magnetron or they are with a larger magn. Value difference endowed:

Dy 4f ¹⁰ 5d ° 6s ² plus Gd 4f ⁷ 5d ¹ 6s ² → electron difference

4f = -3 plus 5d = + 1 = -2 Dy electrons = -2 magnetons = -2 magnetrons.

A magneton (electron with spin moment) is missing for the complete magnetic positive bond. Doping atoms introduce an M-bond gap into the M-semiconductor crystal (eg Co), ie positive magnetrons are bond gaps. This "freely" spreadable positive field energy of the magneton forms a magnetically positive hole. The iron atom becomes a magnetically negative ion = M-Fe ion ^" . A 7-valent cobalt crystal doped with 6-valent foreign atoms is called a P _m -field conductor. Already due to low directional energy supply (H-field) , this can be local

M-hole (μe ⁺ ) of a magneton (μs ^" ) of a neighboring atom is filled with energy by coupling (exchange interaction) with magnetrons. The magnetic field conduction is therefore based mainly on the spread of the positive field energy as magnetron holes, starting from the magn . positive magneton holes (= positive electrons spin moments of e ⁺ , or of missing spin moments of e ^" , which behave like positive magnetic particles), one therefore speaks of P _m field conduction.

P _m field conductors contain positive magnetron hole field energy (binding / coupling gaps) which can be "freely" flattened out = defect magnetrons as magnetization carriers. Result

The P _m and N _m field conductors created by doping remain magnetically neutral to the outside.

The magnetic field conductivity in the doped M semiconductor only increases until all foreign atoms in the N _m field conductor have their surplus

Have released magnetron field energy energetically through coupling / binding, or in the P _m field conductor of each neighboring atom a magnetron hole as magn. Field energy absorbed energetically through non-coupling / bond gap.

Magnetrons are negative bonds, magnetron holes are positive bond gaps.

2.3.8 P _m N _m transition If a P _m field conductor and an N _m field conductor are brought together, a P _m N _m transition is created at the point of contact (Fig. 145). Example P _m N _m transition (FIG. 145) Co = M semiconductor doping with foreign atoms Ni or Fe. N _m field conductor: Co 7-valued + Ni 8-valued doped. Magnetrons = magnetization carriers

P _m field conductor: Co 7-valued + Fe 6-valued doped magnetron holes = magnetization carriers

At the border from P _m - to the N _m field conductor penetrate without the magn. Voltage Θ (= U _m ), only due to the thermal movement, magnetrons from

Nm field conductor into the P _m field conductor and recombine (reunite) there with the magnetron holes (field holes). Conversely, M holes of the P _m field conductor diffuse into the N _m field conductor and connect there with the free magnetrons (→ magnetic surface polarization). On both sides of the border, the M-semiconductor cocktail (eg Co) becomes poor on free magnetization carriers:

The boundary layer acts like a magn. Insulator (μ _r ≥1) and forms an M barrier layer (Fig. 146).

At the P _m N _m junction of M semiconductors, an M barrier layer is created (→ neutral zone like one at the north pole-south pole junction)

Permanent magnets).

However, if there are no line magnetrons and M holes in the boundary layer, the magnetizations of the fixed M ions exert their influence: The Nm boundary region is magnetically positive (ion l _m ⁺ with base μ _B ⁺ )

P _m border area magnetically negatively magnetized (ion l _m ^" with base μβ ^" ).

These spatial magnetization zones (electrical space charges Q → M) end the further magnetic diffusion: the magn. negative P _m boundary layer pulls the diffusing M holes and the magn. positive N _m boundary layer the penetrated magnetrons back. The magnetizations in the approx. 1μm thick boundary layer cause a magn. Diffusion voltage (Θoi _ff ) at the PmNm transition. By creating an outer magn. Voltage (Θ) can be the P _m Nm transition in the blocking direction or in the passage direction for magn. River Φ (river quanta) are operated (Fig. 147).

The PmNm transition acts like a magn. Capacitor. The barrier layer (μ _r ≥1) has a magn. Capacitance C _m (junction capacitance). → Magnetic capacitor: field strength decreases, capacitance increases, the force effects of the field have to be taken into account: Invention field generator → Optimum =

Equilibrium state with energy gap E = 0.

2.3.9 Magnetic breakthrough of the P _m N _m transition

2.3.9.1 Magnetic analogy to the tens effect A breakthrough can occur in the reverse direction. As a result of large magn.

Field strength inside the transition are magnetrons from the magn.

Valence band of the P _m material horizontally across the forbidden zone into the magn.

Conduction band of the N _m material pulled (tunneling). This effect occurs with heavily doped magn. Diodes on and can use magnetic reverse voltage at a few amperes. (Fig. 148).

2.3.9.2 Magnetic avalanche multiplication in the PmNm transition

This mechanism leads to a breakthrough. A magnetron moves at a large magn. Field strength so fast that in the event of a collision with the grid, some of its energy is released and a new free one

"Magnetrons" - "Magnetron hole" pair can generate. These magnetization carriers are accelerated in the same way and can in turn create new free pairs, so that the magnet current / flux increases like an avalanche (FIG. 149). 4. M-field semiconductor components (Magnetic Semiconductor Elements)

4.1. M types A P _m N _m transition leads to M diodes, two P _m N _m transitions lead to

M-transistors, three and more transitions to M-thyristors.

Functions of M-semiconductor components (→ field modulators) M-diode: An M-semiconductor diode conducts if it is polarized in the forward direction, and it blocks the magnetic current / flow if it is polarized in the opposite direction.

M-transistor: M-transistors are active or switchable M-semiconductor components, they can be divided into bipolar M-BT and unipolar M-transistors M-FET.

M-thyristor: M-thyristors (generic term) are magnetically switchable components, with four successive M-semiconductor zones of alternating M-line types: P _m N _m P _m Nm The M-thyristor acts like an M-diode as soon as the M-gate current flows ,

Triggered by magnetic signals, they act like toggle switches (blocking / pass state).

4.2 M-Diodes M-Ha! Conductor component with a P _m N _m transition. The specific

Behavior is determined by the respective course of the doping concentration in the crystal (Fig. 150).

M rectifier diode It acts like a solenoid valve and is therefore the suitable component for rectifying alternating magnetic currents. The reverse magnetic current / flow (M reverse current / flow) can be about 10 ⁷ times smaller than its M-Duτchlassstrom / -fluß. It grows strongly with increasing temperature. M rectifier for high M voltages

High magnetic reverse voltage requires that at least one M zone has low magnetic conductivity (high magnetic resistance in the forward direction and thus excessive heating). By switching on a very lightly doped zone (l _m ) between highly doped P _m and N _m zones, a P _m lmNm rectifier is created, which has high magnetic blocking voltage but low magnetic on resistance: → magnetic conductivity modulation.

M switching diode Preferably for quick switching from low magnetic impedance

(magn. impedance = vector sum of the M individual resistors) and vice versa. The switching time is shortened by additional diffusion of substances that favor the recombination of magnetrons and M-holes. MZ-diode

Magnetic semiconductor diode, in which, in the case of increasing magnetic voltage in the reverse direction from a certain magnetic voltage, the magnetic current / flux rises steeply as a result of magnetic avalanche breakdown. M-Z diodes are designed for continuous operation in this area.

M-capacitance diode

The magnetic space charge zone at the P _m N _m junction acts like a magnetic capacitor. A dimagnetic is that of

Magnetization carriers "bared" magnetic semiconductor material. Increase the magn. Voltage widens the M junction and reduces the M capacitance; Magnetic voltage reduction increases the magnetic M capacitance.

M-absorbing diode

M semiconductor diode, in which the M junction absorption effect is used. There is a magnetic reverse voltage at the P _m N _m junction. Incoming magnetic flux releases magnetrons from the M bonds. This creates additional free magnetrons and magnetron holes. They increase the magnetic reverse current / flux in proportion to the incidence of the magnetic flux.

For M diodes (Fig. 150) 1) Intensity Magnetic field energy that penetrates a surface dA vertically per unit of time, i.e. the quotient of power P and surface. Intensity l = P / A Magnetic field energy in the volume VW _m = 1/2 (H -B) V, power P = dW _rfl / dt Magnetic field energy _density w _m = W _m / V

2) M emission In the vicinity of the transition, the magnetrons recombine with the M holes, releasing energy of the order of magnitude E _g . In the M “rays” of the recombination, this energy is emitted in the form of flow quanta of the energy hf * E _g . This means that a MED approximately emits a monochromatic M field, the wavelength λ _g of which is the width of the prohibited zone E _g The emission occurs with the intensity I.

3) ESP: electron spin resonance

4.3 M-transistors 4.3.1 Principle of operation M-transistors are reinforcing (active) magnetic semiconductor components.

They are divided into a) bipolar (magnetons + magnetrons and magneton holes + magnetron holes) and b) unipolar (magnetons + magnetrons or magneton holes + magnetron holes) magnetic field transistors. M transistor types (Fig. 151), structure and properties of M transistors (Fig. 152)

The M-IGTB is a combination of a bipolar and unipolar M transistor.

M-gain (current, voltage, power) / M-circuit (of the transistor (transistor effect = coupling / binding effect) and transistor FM (FM = transistor effect between two PM's) Two closely adjacent magnetic P _m N _m transitions lead to magnetic Transistor effect and M-components (M-field modulators), which amplify magnetic signals or act as magnetic switches.There are bipolar M-BT and unipolar M-FET transistors, which in their

Functional principle can also be used as an M field modulator in the FK.

Amplification / switching of magnetic currents / fluxes (Φ) and voltage (Θ) with magnetically doped boundary layers (FM basis) (P _m N _m -, PmN _m Pm-, N _m PmN _m -

FM transitions). Blocked P _mm transition (basic collector (N _m )) by

Make injection of magnetic flux carriers Φ (magnetrons = coupling by magnetic spin moments doping) magnetically conductive (conductivity -

Permeability μ-μo μr; magn. Resistance R _m -1 / μ.) → diffusion of magnetic flux / current quanta Φ ₀

(Couplings / bonds) through the barrier layer.

Modulation variant 1 (also for FM): → conductivity modulation

In a PN _m P _m transistor, there are magnetic magnetron holes (Φo deficiency, coupling holes) that get from the magnetic emitter (P _m ) into the thin FM base layer, from here through magnetic diffusion into the area of the blocked P _m N _m transition come and are attracted there by the magnetic field to the magnetic collector (N _m ). M-barrier layer is the magnetic basis for the a) transition between parallel spins, FKG symbol H = ») = control of attraction, or b) transition between antiparallel spins, FKG symbol: H <=) = control of repulsion.

Magnetic field in the PM

Magnetic current / flux Φ is constant over time (therefore here also the state of early grief with E = 0) and is an integer multiple of the magnetic flux / current quantum Φrj.

M transistor as an amplifier

A little magn. Base current / flow ΦB causes a large magn with the M transistor. Collector current / flow Φc. This is called magnetic current / flux gain (Vφ). An M transistor can also be operated as a magnetic voltage amplifier (V _Θ ) and power amplifier (Vp).

M-transistor as a switch → M-field modulator M-transistors as a switch have two switching states: They work in the magn. Saturation (magn. Conductive working point A ₃ = "On" (Bs-Bo t with H ₃₂ and μmax) or blocked (magn. Non-conductive = magnetically transparent (μr = 1) point Ai = "Off" (B ₅ = Bmax at H _a5 = H _amax ), (note saturation range = overdrive range Bo at H _a o to B ₃ at H _a 3, beginning of Ü range = beginning of saturation at point A ₂ on the working straight.

Ferromagnetic material in the magn. Field. M switch S → magn. Switching states = FM flip-flop (Fig. 81).

Magnetic field polarity polarized. Positive magnetron holes control in the magnetic N _m PmN transistor

(Coupling carrier gaps) of the M base current / flow x times the amount of negative magnetrons (coupling carriers) that flow from the M emitter to the M collector (FIG. 153). Mode of operation explained for N _m P _m N _m transistor

The M-emitter-base junction (M-EB) is polarized in the magnetic forward direction. This injects magnetrons into the base zone (Fig. 154). The M-base collector transition (M-BC) is polarized in the reverse direction.

This creates a magnetic space charge zone with a strong magnetic field. A noticeable magnetic coupling / bond (= M transistor effect) occurs when the two P _m Nm transitions are very close to each other (in the cobalt «10 μ).

Then the magnetrons injected at M-EB diffuse through the M base to the M collector. As soon as they come within range of the M-BC magnetic field, they are accelerated into the M collector field and continue to flow as M collector current. The concentration gradient in the M base remains and therefore the cause of others

Magnetron migration from the M emitter to the M collector. 99% and more of all magnetrons emanating from the M emitter migrate into the magnetic space charge zone and become the M column current / flow. The few missing magnetrons got into the magnetron gaps when the MP-doped M base was traversed. Unless otherwise happens, they magnetize the M base negatively, and repulsive forces would prevent further magnetrons from flowing in within a very short time (approx. 50 ns). A small M base current / flow from positive magnetic carriers (magnetron holes) compensates for this negative magnetization in whole or in part in the M transistor.

Small changes in the base magnetic current / flux thus cause large changes in the magnetic emitter-collector current / flow. The NmP _m N _m transistor is a bipolar magnetfrom- / flux-controlled, amplifying magnetic semiconductor component.

In the bipolar M transistor, the magn. Base current let B the collector current / flow Φ _c . Only a low magnetic power is required for the control.

An M transistor is called a magn. Amplifier or as magn. Switch used.

Crystal isotropy / anisotropy The isotropy or anisotropy of the crystal must be taken into account - especially in the base, if the flux quanta are to flow off tangentially (e.g. with Co there is good conductivity in the hexagonal axis, bad one perpendicular to it). The basis of the M-BT can therefore be isotropic with cube texture (x, y, z, axis = <Q0> - same permeability); Co-doped in the P _m or Nm layer.

Due to the preferred magnetic direction / conductivity, note the following: a) crystal anisotropy b) magnetic field-induced anisotropy c) voltage-induced anisotropy d) magnetic shape anisotropy of the base

Anisotropic electrical conductivity → de-electrification must also be observed.

doping level

The emitter zone of bipolar M transistors is heavily doped magnetically, the collector zone a little less. The extremely thin base layer (a few μm thick) contains only a small number of M foreign atoms.

Preferred direction M-current / flow in the M-BT

When using the double diffusion method, the doping is highest in the emitter and lowest in the collector. These conditions also result in the preferred direction for the functional mechanism (normal

Operating direction). In the opposite direction (reverse operation), the magnetic properties are significantly poorer.

Depending on the application, bipolar M transistors are classified: - M amplifier transistors - M switching transistors operating conditions

According to the magn. Polarity of the two magn. Diode voltages ΘBE and ΘBC are divided into four operating states of the M-bipolar transistor. Table of operating states of the M-NPN transistor ΘBE ΘBC Operating state application> 0 - <0 active normal M-amplifier 0 ^ 0 active inverse <0 <Q disabled switch ("Off") 0 ^ 0 overridden switch ("On")

In inverse mode (Θ _B E 0, ΘBC ^ O) the M transistor is operated against the preferred direction of its optimized design. The resulting magn. Stron flux gain factors are then significantly worse. The area of oversteer is also called the saturation area. The

Magn. Output current / foot can no longer through the magn. Input current flow can be controlled. The P _m N _m P _m transistor are all magn. Reverse voltage and current flow directions. → Note BH _a - and B-μ _r characteristic for magnetic amplification factors (flux amplification) (Fig. 80, 81).

B [TJ = output current V output flux density B = μ ₀ (H _a + M)

Ha [A / cm] = input field strength amplitude, outer coil field M (A / cm] = magnetization M = B / μo -H _a (excitation / magnetization, note -H _a ) μ _r , μ _a = permeability number, permeability amplitude

4.3 M-field effect transistor (M-FET) 4.3.1 Overview of the functional principle

In this type, the magnetic current / flux in a magnetically conductive channel is essentially controlled by a magnetic field across the channel, which is generated by a magnetic voltage applied via a magnetic control magnet electrode. In contrast to the bibolar M transistor, M field effect transistors only work with magnetic carriers of one type (magnetrons or magnetron holes), hence the name M unipolar transistors. They differ in a) M junction field effect transistors (M-SFET) b) M insulating layer field effect transistors (M-IFET)

Mode of operation junction M field effect transistor (M-SFET) (explained for N _m channel type) (N _m MOS: Fig. 155)

There is M DC voltage at the ends of an N _m -conducting crystal. Magnetrons flow from M source to M drain. The width of the channel is determined with two P _m zones diffused into the side and the negative M voltage applied to them. If the negative M-gate voltage is increased, the M-space magnetization zones expand more into the channel and constrict the magnetic current (flux) pathways. The magnetic voltage at the control magnetrode G thus controls the magnetic current / flow between M-Source S and M-Drain D. For the function of the M-SFET, only magnetic carriers of one polarity are necessary (magnetrons or magnetron holes). The control of the solenoid current / _'territoryc is almost without power. The barrier layer M-SFET is therefore a unipolar magnetically controlled component. Mode of operation of an insulating layer M-field effect transistor (M-IFET)

(Explanation for P _m channel enhancement type) (P _m MOS: Fig. 156) M-IFET = P _m MOS transistor: Layer arrangement: Magnetic Metal-Magnetic Oxide-Semiconductor. Bern: With electronic MOS: oxide layers electrically isolate

(O with ε _r = 1 = non-electrical); in the M-MOS there are magnetic oxide layers made of magnetic insulators (O with μ _r = 1 = non-magnetic).

Without magnetic voltage at the gate magnet electrodes, no magnetic current / flow flows between the M source and the M drain: the MP _m N _m junctions block. A magnetically negative voltage at the M-Gate in the Nm area under the magnetrode displaces the magnetrons into the crystal interior and pulls magnetron holes - which are always present as minority magnetization carriers in the N _m cobalt - to the surface. There is always a narrow P _m -conducting layer under the surface; a pm Kanai.

Magnetic current / flux Φ can now flow between the two areas (M-Source and M-Drain). It consists only of magnetron holes. Since the magnetic gate voltage acts through a magnetically insulating oxide layer, no magnetic current flows in the control circuit: The

Control takes place almost without power.

The M-IFET Transϊstor is a unipolar, magnetically controlled / no / s controlled component.

Result

In the M-field effect transistor, a magnetic field controls across

Channel the magnetic resistance of the source-drain path. in M field effect transistors controls the magnetic

Gate-source voltage practically without power the magnetic drain current / flow.

At the magnetic gate-source voltage zero, a magnetic already flows in a self-conducting M-field effect transistor

Drain current / flow, whereas in a self-blocking M-FET the magnetic drain current / flow is zero.

IG: magnetic isolated gate - insulated gate, M insulating layer FET. The magn. Gate insulation achieves extremely high magnetic

Input resistance that is independent of the magnitude and polarity of the magnetic gate voltage.

Is a magnetically conductive one with M-IG-FET without M-Gate-Source voltage

Channel available, one speaks of magnetically self-conducting M-FET. Self-locking M-FETs still have no magnetic gate voltage no magnetically conductive channel. This only arises from a suitably polarized magnetic gate-source voltage. Enrichment M-IG-FET are self-locking. 5 Depletion M-IG-FET are self-conducting. There are also P _m MOS, N _m MOS transistors, (C _m MOS: Fig. 157) and DmMOS with a BCD mixing process (bipolar / C _m MOS / D _m MOS). 0 Structure of M insulating layer FET ( Fig. 158, 159, 160, 161) 1. P _m channel (Fig. 158, 159) The P _m self-conducting or N _m self-blocking can also be used with: a) source-source = NN polarity or b) drain -Drain = SS polarity to be operated. 5 Consequence: repulsion and not flow in the channel when switching to "conductive" → equilibrium, if there is no repulsion = channel non-conductive gate with different polarity necessary: - ΘG = S-pole (-) with NN polarity + ΘG = N-pole (+) with SS polarity, ie the polarity of the same name of the source-0 or drain path 2. N _m channel (Fig. 160, 161) The N _m self-locking or P _m self-conducting can also be operated with: a) Source-Source = NN polarity or 5 b) Drain-Drain - SS polarity. Follower repulsion and no flow in the channel when switching to "conductive" → equilibrium if there is no repulsion = channel not conductive gate with different polarity necessary: 0 + ΘG = S-pole (-) with NN-polarity -ΘG = N-pole (+) with SS polarity, ie with the same polarity of the source or drain path

4.3.2.3 M field effect transistors without M unijunction transistors S 4.4 Power magnetronics Power magnetronics deals with magnetic current Z-flux supplies, M drive controls and M house technology. M-semiconductor components are: M-diode, M-thyristor, M-GTO-thyristor, M-triac, M-IGTB. 4.4.1 M thyristor Three consecutive P _m N _m transitions lead to the magnetic thyristor effect and to magnetic components. 5 M thyristors are therefore magnetically switchable components with, for example, a Co or Dy disk that contains four successive M semiconductor zones , where P _m and N _m zones alternate: PmN PmN _m (Fig. 163). The M anode is connected to the metal housing in a magnetically conductive manner. In operation, magn. Apply voltage to the M thyristor housing. M thyristors - triggered by magnetic signals - act like M toggle switches. The term "magnetic thyristor" is used as a generic term for all types of magnetic components that can be switched from a blocking state to a forward state (or vice versa).

M thyristors can be divided into P _m gate thyristors and N _m gate thyristors. In the P _m gate thyristor, the outer P _m layer is the M anode, the outer N _m layer is the M cathode and the inner P _m layer is the gate.

functionality

The gate current / flux ΦG floods the inner P _m field conductor (Fig. 164 a) so strongly that the M-barrier layer in the middle is broken down. The remaining P _m N _m transitions are depending on the direction of the magn. Connection voltage between M anode and M cathode either both in

Forward or reverse direction and then act like the PmNm junction of an M semiconductor diode (Fig. 164 b). The M thyristor acts like an M diode as soon as magn. Gate current / flow flows. The magn. Forward voltage ΘF and the magn. Gate voltage Θ _GK are in the same range (Fig. 164 c).

With the M thyristor, three M barrier layers are effective inside. If there is a magn between the M anode and M cathode. Voltage, at least one of these M layers is polarized in the reverse direction. The direction of the magn. Voltage at which only one P _m N _m junction is polarized in the reverse direction in the M thyristor is called the forward direction. The direction in which two M barrier layers are switched in the reverse direction is called the reverse direction.

M thyristors can be used as M rectifiers or as contactless ones

Use the M switch (e.g. as an M field modulator).

4.4.2 M-GTO thyristor

Usual M-thyristors cannot be extinguished by the M-gate current / flow. The extinguishing is however with M-GTO thyristors (can be switched off

M-thyristors: gate-turn-off) possible via the gate. The M-GTO thyristor is controlled with M pulses of alternating magnetic polarity for ignition and extinguishing. 4.4.3 M thyristor diodes

M thyristors without an M control connection are called M three-layer diodes, M four-layer diodes and M five-layer diodes according to the number of their M layers.

M three-layer diode (M diac) (M diac: diode and alternating current = M alternating current)

The M three-layer diode contains, for example, a cobalt plate (or Dy) with the layers M-PNP (FIG. 165). When the M switching voltage is exceeded, the M diac becomes magn regardless of the polarity. conductive. If the M holding voltage is undershot, the M-Diac locks. M-Vierschichtdiod @

The M four-layer diode has the M layer structure Pm mPmN. It becomes magnetically conductive through an M switching voltage which, similar to an M thyristor, ignites the M four-layer diode.

The M four-layer diodes are used e.g. in M-tipping generators, as M-pulse formers or as magnetic switches (→ field modulator).

M five-layer diode With the M five-layer diode, the M layer sequence PmN _m P _m N _m Pm-

Regardless of the direction of the applied M voltage, the M five-layer diode switches to the magn when the M ignition voltage is reached. conductive state. Result

M thyristor diodes are e.g. used to generate M voltage pulses and thus to ignite M thyristors and M triacs. For this purpose, they are switched in front of the gate of the relevant M component. 4.4.4 M-triac

(M-triac: triode and alternating current = M alternating current / flow) To control M alternating current / flow, reverse-blocking M thyristor diodes can be used in parallel, for example a P _m gate thyristor and an N _m - Gate thyristor (Fig. 166 a)

If the structure of both M-thyristors is moved together (Fig. 166 a), an M-semiconductor component is obtained which has the behavior of the counter-parallel connection, but only requires a control magnetrode (Fig. 166 b and 166 c).

An arbitrarily polarized M pulse between the control magnetrode and the adjacent magnetrode switches one of the two M thyristors into the magn regardless of the direction of the M voltage in the M load current / flow circuit. conductive state. The two directions switchable (bidirectional) M thyristor triode are called M triac. .

use

The M-Triac is designed for high magn. Voltages and M-currents / rivers used. It can be used as an actuator for M AC consumers (e.g. in M dimmers) and as a magnetronic contactor.

4.4.5 M-IGBT (Magnetic Insulated Gate Bipolar Transistor)

M-IGTB's are magnetronic semiconductor components that are used as magnetronic switches in power magnetronics. The M-IGTB combines the main advantages of the M-FET (powerless

Control) and the bipolar M-transistor (good pass behavior for magnetic currents / flows).

The M-IGBT is therefore an ideal component for the field modulator of the FKM (high efficiency, strong magn. Currents / flows switch). Structure of the M-semiconductor structure The structure of the M-IGBT is similar to that of a power M-ET, (eg M-MOSFET). It differs by a P _m material lying under the N _m substrate, which forms the collector connection V of the M-IGBT (Fig. 167).

In the M-IGBT, an M-field effect transistor drives a bipolar M-transistor. (Fig. 168). As with the M-MOSFET, an M-IGBT consists of many elements connected in parallel with a common collector. The M-IGBT has three M connectors. M control of the M component takes place via the gate-emitter path GE. The M load current / flow Φ _c flows over the collector-emitter path CE.

Switching behavior of the M-IGBT The control takes place by applying a positive magn. tension

(Θ _GE ) to the gate. The collector-emitter path only switches when the magn. Gate-emitter lock voltage through. In the magn. conductive state of the CE route, the M-IGBT is in the area of the magn. Saturation, that is, the magn. Collector-emitter voltage drops to the magn. Saturation voltage Θcεsat-

Result and properties of the M-IGBT

• Like bipolar M transistors, M-IGBTs have a small magn. State resistance. «The magn. Pass loss compared to comparable FETs is therefore low.

• As with the M-FET, the M-IGBT is controlled almost without power.

• The M-IGBT can only be blocked to a limited extent in the reverse direction, so that M free-wheeling diode circuits with short switch-off times (e.g. M-FRED diodes (Fast Recovery Epitaxial Diode) are built up if necessary.

Use of the M-IGBT

M-IGBTs are used in magn. High performance range for high magn. Reverse voltages used and can high magn. Switch forward currents.

You can use switching frequencies up to 300 kHz in magn. Switching power supplies and in uninterruptible magnetic current A-flux supplies (e.g. M-field modulator in solid-state FKM). M-IGBTs can be manufactured as discrete M individual components, as M modules (assembly) and as M arrays (arrangements).

4.5. Result / Outlook

4.5.1 E-semiconductor components (E-diodes, E-transistors, E-thyristors)

Magnetronics can be applied analogously and phenomenologically to ferroelectricity; here the coupling carriers are not based on spin moments, but on surface charges of the crystals, which cause the electrically spontaneous polarization in the domains.

These ferroelectric components can also be designed as an E-field modulator. The crucial point is: there are no electrons flowing, but D-flux quanta Φo (based on surface charges of the crystals with flux Φ), ie instead of the magnetic flux density B with magn. Field strength H is the electrical displacement density D with electrical field strength E.

4.5.2 Supra semi-conductor The superconductor, however, is an electrical system and used

"Cooper pairs" as "bound" conduction electrons. The matching "Cooper-hole pairs" result from the lack of "Cooper pairs" in a supra-semiconductor. A supra-semiconductor is made of a non-conductor crystal with doped superconductor foreign atoms (Cooper pair → SN _m - conductive or defect-Cooper pair → SP _m -conducting) and can thus be used as a superconductor semiconductor component (SM-BT and SM-FET), also to be designed as an SM field modulator. The atom must have one antiparallel electron pair too many = electron pair

(SN _m ) or have too little = electron-hole pair (SP _m ). This results in the "bound" pairs of conduction electrons or pairs of holes in the M-Supra semiconductor. They are also electrical e-superconductors and electrical super-semiconductors

(SE type) can be produced that work with a D field instead of an M field (→ supramagnetic currents).

4.6. Further application magnetronics The magnetic and electrical field M / E semiconductors can also be used as

Semiconductor components in magnetic or electrical field circuits, e.g. computer chips and in nano structure (due to the lack of heating due to electron transport in the conductor tracks), with field currents / flows and signal propagation in phase / group speed instead of electron currents (drifting the e ^" in the conductor tracks), manufactured and used.

Supra-field semiconductors can also be used as components in magnetic or electrical field circuits. 5. M / E field semiconductor modulators

5.1. M-BT inline field modulator

5.1.1 M-BT = magnetic bipolar transistor

• Conductivity control. • Magnet-free / n / -f / -vss controlled, amplifying or switching component

• Bipolar = two different magnetization carriers: magnetrons N _m and M holes P _m . 3 zones of different conductivity μoμ _r - zones: emitter E doping high → μoμ _r max. = high number of FA basis B doping little → μoμ _r low = number of FA collector C doping low → μ ₀ μ _r min. = low number FA

• The ratios of the magn. Conductivity in the E or C also result in the preferred direction for the functional mechanism (normal operating direction). In the opposite direction (inverse operation) the magn. Properties significantly worse. • M-transistor effect = coupling when EB and BC junctions are very close to each other.

• Polarity of the transitions: EB zone - direction of passage → injection of magnetization carriers into the base zone BC zone = blocking direction → spatial magnetization zone with strong magn. Field.

• Note the adaptation of E, B, C to the working point in BH _a characteristic 5.1.2 M-BT inline FM construction (Fig. 169)

5.2. M-FET inline field modulator

5.2.1 M-FET = magnetic field effect transistor

• Channel cross-section control. • Unipolar = 1 type of magnetization carrier = 1 zone of specific conductivity μoμ _r , N _m (magnetrons) or P _m (M holes), eg doped Co single crystal.

• Magnetic voltage controlled, amplifying or switching component. In the M-FET, a magn. Field across the channel the magn. Resistance of the source-drain path. • The magn. Gate-source voltage controls the drain current / flow practically without power.

5.2.2 M-junction FET

• Gate G = control magnetrode: control of the magn. Current / flow through a magn. Voltage (note operating points in B-H characteristic curve) Gate: When increasing the negative magn. Tension, the spatial magnetization zones expand more into the channel (N = + → S = -) and tie the magn. Electricity / river trains.

• Source = source (N-pole) • Drain = sink (S-pole)

• The conductive channel flows without a magn. Voltage at G is a magnetic current / flux between source and drain.

5.3 M-insulation layer IG-FET (M-MOS-FET) • IG gate insulation

• The CöO insulation layer has a relative permeability of approx. Μ _r = 3.84

• Self-conducting M-FET (depletion type) Magn. Field of the gate voltage displaces movable magnetization carriers from the channel zone, which thereby depletes them at magnetrons or M-holes. At the magn. Gate-source voltage zero, a drain current already flows: the transitions are open.

• Self-locking FET (enrichment type) With the magn. Gate-source voltage zero, no drain current flows: the transitions are blocked. Note the N-channel FET polarity of the gate-source voltage with a positive pole: The M field pulls the free magnetrons to the surface of the crystal → a conductive path of movable magnetrons is created between S and D _r an N _m channel. Magnify the magn. Gate voltage enriches the magnetization carriers in the channel. 5.4 M-IG-FET inline FM construction (Fig. 170)

5.5 M-IGBT Iniine-Fθidmodufator 5.5.1 M-IGBT - magnetic insulated gate bipolar transistor

• M-IGBT = combination of MBT (good transmission behavior) with M-FET (powerless control).

• Small magn. State resistance.

• Control almost without power. • M-IGBT can only be blocked to a limited extent in the reverse direction (one M freewheeling diode).

• Connections: emitter E, collector C, gate G, control via G-E path, magn. Load current flows Φc over the C-E section.

• Note the operating point in BH _a characteristic.

M-IGBT Inline FM construction (Fig. 171)

D. Advantageous effect of the invention

According to the invention, the magnetronics / magn. Field semiconductor components & M / E semiconductor field modulators have various advantages. Since the magnetrons and magnetron holes do not collide with the positive ion cores, no heat is generated in the usual sense. Because of the lack of heat generation, the magnetronic ones

Components can be produced in micro and nano structures. The flux quanta (magnetron / magnetron holes) are transported at phase / group speed in the magnetic semiconductor. application

Phase ZGruppengeschwindigkeit

Scaling: Nano in volume 10 ⁹ times smaller than micro plus the advantage of short distances in terms of signal processing time (approx. Factor 100 faster, e.g. in the NanoComputer. In addition, the magnetronic components do not require any external electrical current because: a) A field machine in micro or nanostructure can be placed as a current generator on the chip in order to ensure the necessary electrical energy supply, for example for actively modulating coils that generate magnetic fields, etc. b) the magnetronics does not itself consume any electrical current. It should also be pointed out that the entire magnetic engineering and magnetronics can also be used in the electrical field with components made of ferroelectrics (here surface charges are the polarizers). Otherwise, all electrical E-field semiconductor components can be constructed analogously to the magnetic ones (→ electrical hysteresis physics). Furthermore, the superconducting M / E semiconductor is described according to the invention. C. Description of a way to carry out the invention of the field force generator

1. Field force generator (example FKG with 1 PM pair and 2 symmetrical kinematic FM's)

1.1 Fig. 172 a - e: FKG machine construction

Example of torque conversion using a one-way clutch a) Vertical longitudinal section (Fig. 1 2 a) and b) Top view (Fig. 172 b)

The basic principle of a field force machine, type field force generator (FKG), divided into a power housing module and crank housing module, is shown. When the field modulator (FM) is closed, the field force machine is in equilibrium and in the TDC position of a force-torque converter and a crankshaft. The force-torque converter is in the example shown a one-way force-converting one-way clutch and not a connecting rod length variator system, with the particular advantage that the one-way clutch is the force in the

Force-displacement characteristic of field batteries (FB) can convert from the maximum force.

A starter single-shaft motor generator (MG) starts the rotational movement and energy extraction of the field force generator (FKG).

The field batteries (FB1 and FB2), controlled in their field force effect by a field modulator (FM) driven by an electric motor, drive in the opening cycle of the field modulator (FM), with force application + F, and directional in a partition to the crankcase Module, one each

Articulation with two push rods, the FK push rod under load + F.

The push rod (FK) introduces the force + F in TDC position via a swivel joint at the intersection 45 ° to TDC on the one-way clutch turning circle. This swivel moves on the load

Freewheel clutch turning circle with a stroke angle of 90 ° from TDC to TDC in order to convert the force into torque on the crankshaft using the translational-rotation converter type "FK".

The second push rod (P), coupled via the crank pin of the crankshaft on the crank circle of the crankshaft, moves this crank pin in the work cycle, with rotation of the crankshaft, from TDC = 0 ° KW to TDC = 180 ° KW.

After exceeding the UT position of the crankshaft, the connecting rod "connecting rod" (P) pushes the crank pin from the UT to the TDC position without load due to the kinetic energy previously transferred to the flywheel (S). As a result, the one-way clutch is rotated back into the starting position without clamping the clamping bodies. The one-way clutch So oscillates in the work and idle stroke at 90 °, while the crankshaft makes one full revolution to reset the field force generator (FKG) to the starting position for initiating a new work cycle with + F.

Both pairs of push rods are 180 ° out of phase on the crankshaft. This enables the field battery (FB1) as magnetic piston K1 to have the worker penalty + F at OT = 0 ° KW in the 180 ° KW position, and the field battery (FB2) as magnetic piston K2 can also have the worker force + F at OT = 0 ° KW in the 180 ° phase-shifted 0 ° KW position, above the

Initiate force-torque converter with crankshaft reset. c) Principle of a symmetrical FM arrangement (Fig. 172 c) with field modulator view, section and rack and pinion drive under supervision The kinematic field modulator (FM) is designed in a symmetrical design due to the pulse compensation and shorter switching time (shorter path) ( FM1 and FM2). The opening and closing takes place via counter-rotating racks (rack) which are driven by a pinion. To interrupt the eddy currents, the field modulator plate is divided into strips with the numbers 1-5.

The field modulator (FM) moves on an equipotential surface perpendicular to the field lines of the field batteries (FB), ie perpendicular to the preferred magnetic direction, which are designed as U-magnets. The north poles are marked with (+) and the south poles with (-). d) Detail of FM switching mechanism (Fig. 172 d)

The view, top view and section A-A alternatively show how the transverse field modulator movement is initiated by a 2-joint lever mechanism, initiated by the rotary movement of a

Shaft and connected electric motor. e) Vertical section FM (Fig. 172 d)

Another alternative, shown in a view, top view and section, shows the transverse field modulator movement, realized by a direct one

Coupling with a three-phase linear motor, which causes the oscillation between "open" and * 'closed "position.

The difference between the drive alternatives "counter-rotating racks", "2-joint lifting mechanism" and three-phase linear motor lies in the wear and the amount of kinetic energy, i.e. the drive energy for the field modulator (FM).

The FKM control, block diagram (Fig. 173) The FKM control, block diagram (Fig. 173) shows how the example

Field motor controlled and metrologically controlled.

Field batteries (multible PM's) (Fig. 174)

With the arrangement of multiple field batteries, a covariant introduction of force is shown, ie the parallel introduction of the force + F through a second, simultaneously working, magnetic piston set, which also causes the "magnetic stroke" to reset the first set of magnetic pistons from the bottom to top position by counter-oscillation. For example, both stroke paths of the crankshaft are assigned the force + F.

1.2 FKM control

FKM control, block diagram. (Fig. 173)

A. Control

1.0 Power 1.1 On / Off switch + lamp

1.2 Backup

1.3 Starter a) disc rotor motor or b) three-phase synchronous permanent motor with a high number of poles (max. Torque), n _max 15,000 min ^"1 , has the highest efficiency

1.4 Operating time (t) quartz oscillator

1.5 Battery charge status (V)

Lithium ion or lithium polymer battery

Controller lamp: three-phase claw pole generator 14V, (up to 1600 W, 120A)

1.6 Cooling Power-Cube (temperature controlled) a) external cooling with fan or b) internal cooling with Peltier element (electricity from excess of the FKM) 2.0 field modulator: FM controller for electr. control

2.1 Open / Close

100% - "open at OT = KW 0 ° 0% =" close ^α at UT = KW 180 ° controller A1 =% "open at / after OT = KW 0 ° - φ ° A2 = always" closed "at UT = KW 180 °

2.2 Shutter speed (t) Controller for coil current (pulse I) → opening / closing time of the FM at 0 ° or φ ° after TDC

2.3 Closure time KW φ ° after OT

Controller B = late closure (0 ° KW to + φ ° KW after OT)

3.0 Power control switch switches manually in operating mode 1 or 2:

1. With speed and acceleration control FKM in operating curve with max. Operate efficiency. 2. With acceleration: FKM with max. Operate performance; if the battery is almost empty, then switch to operating state 1.) with max. Efficiency for recharging the battery.

B. Measuring devices

With outputs for multi-channel recorders / oscillographs

1.0 Mechanics field modulator: force, path, time

1.1 Field modulator (FM)

1.1.1 TDC position for "open at KW = 0 ° -φ ° after TDC: force on FM (N), travel (mm, →%" open) open, time (s) (according to impulse) sensors: force measurement with spring body or inductive differential coil sensor: displacement Piezoelectric sensor: force, pressure, shock waves Piezoelectric acceleration sensor: acceleration immersion magnetic sensor speed

1.1.2 Position UT for "closed" at KW = 180 °: force on FM (N), path (mm), time (s) sensors: force measurement with spring body or inductive differential coil sensor: path Piezoelectric sensor: force, pressure, shock waves Piezoelectric Acceleration sensor: acceleration immersion magnetic sensor: speed 1.2 late adjustment, FM shutter timing, FM shutter adjustment (KW <p ° after TDC)

1.3 connecting rod (P)

1.3.1 Force on FB1 connecting rod (N), position OT: repulsion OT → UT, distance (mm), time (s), sensors: force measurement with spring body or inductive differential coil sensor: path Piezoelectric sensor: force, pressure, shock waves Piezoelectric acceleration sensor : Acceleration of the submersible magnetic sensor: Speed 1.3.2 Force on FB2 connecting rod (N), position UT: no force UT → OT, travel (mm), time (s), sensors: force measurement with spring body or inductive differential coil sensor: travel Piezoelectric sensor: force, pressure, shock waves Piezoelectric acceleration sensor: acceleration submersible magnetic sensor: speed 2.0 electrical field modulator

2.1 Input FM (coil current I, voltage V, power W)

2.2 FM nonlinear current pulse curve (I) (for shutter speed)

2.3 Magnetic field: magnetic field sensor

2.3 Temperature (T) FM, silicon temperature sensor 2.4 Temperature FB1, FB2, silicon temperature sensor

3.0 FKM field machine

3.1 speed (s), tachometer generator

3.2 Torque (Nm) 3.3 mech. Power (W)

3.4 electrical data:

3.4.1 FM input (l, V, W)

3.4.2 FKM output (l, V, W)

3.4.3 difference FKM-FM (l, V, W) → efficiency 3.4.4 efficiency%

3.5 Temperature in the power cube, silicon temperature sensor

3.6 Option: Cooling electrically with Peltier element from excess energy, instead of fan ventilation

3.7 Resistor temperature = consumer (FKM output), silicon temperature sensor

2. Field battery (multibie PM's) (Fig. 174) Multiple PMs and oscillation OT- »UT / UT → OT

3. Field force motor Electric field force motor (FKE pulse converter)

A. Technical field to which the invention relates In contrast to the magnetic field force generator, the

Field force motor electrical energy that can initially be obtained from the field force generator (temporarily stored in a buffer battery). The FKE can also obtain its electrical energy from another electrical "source".

No FM is required in the field force motor, but magnesians or electres are used according to the invention. B. Technical problem to be solved

The invention of the field force motor is the generation of magnetic fields by magnesians (applies analogously to electric readers with electric fields).

The field motor can e.g. be designed as an electric reciprocating piston engine. In contrast to the FKG, no FM / PS is used, but the electrical primary energy is used to feed excitation coils with special amplifier cores, which generate a repulsive (or attractive) field.

The coil, with a passive core material or cavity resonator with an active host crystal that is matched and reinforced at the working point of the material, is called a magnesian or electreser.

C. Presentation of the invention

According to the invention, the operating principle of the magnesian machine = magnesian motor or electreser machine = electreser motor is explained below: 1. Coil with a reinforcing core A machine with a very high magnetic field gain at the operating point of a highly conductive ferromagnetic material (high conductivity → high strengthening of the magnetization The magnetization takes place through pulse magnetization with pulse compression technology at the operating point. This highly non-linear field impulse, which is magnetically reinforced by the material at the working point, enables a non-linear field force shock wave to be generated in this machine (this is controlled like knocking in the combustion engine due to the combustion front at the speed of sound).

2. Active solid-state magnet / solid-state electrometer As an analogy to a "laser machine" (light pulse / pulse = light flash, pumped in the laser material by light), the magnetic field amplification taking place coherently in the doped magnetic host crystal. Here, a magnetic (or electrical for electricians) pumping process (parametric excitation / amplification with pump frequency) with pulse compression technology (analogous to a laser) takes place. This creates a magnetic "lightning", magnetically pumped in the magnesium material.

3. Magnesian diode, electrodes diode

Magnesian / Electresian principle of operation 1. Coil with reinforcing core The greater the magnetic flux, the greater the flow Θ and the smaller the mean coil length (mean field line length). The invention is explained by the 1st and / or 2nd optimization. I. Optimization

Optimization of the maximum of the magnetic effect between maximizing Θ = I * N while minimizing L _m .

Consequence: Many small coils in an x-y matrix or triangular network and arranged in z-cascade result in much more magnetic effect than a large one

Coil with large l _m .

A magnet has a greater effect of force, the denser the magnetic field lines are, that is, the larger the magnetic flux and the smaller the area through which it passes.

2. Optimization

Maximizing the magnetic flux with minimizing the area. Result: Many small coils in an x-y matrix or triangular network and arranged in z-cascade result in much more magn. Effect of force as a great

Large A. coil

Coil with core as a magnetic amplifier

The core is magnetically saturated at maximum modulation; from saturation onwards, there is no amplification. According to the invention, the highest

Gain factor at the operating point A ₃ (μ _ma χ) is used in optimized cores and coils, because then the energy input is lowest and the gain is highest. The above optimization criteria are decisive for the efficiency of the field force motor. Further optimization criteria a) For the soft magnetic material the demagnetization factor N = 1 with - (BH) max (negative energy) has to be considered. The core must be optimized first, then the coil. b) As with the PM, the optimum of adhesive force to weight of the magnet (here with core + coil + yoke, depending on the design) is used for the optimization (the optimized ratio V = H / G). c) The transverse force-displacement characteristic is also decisive for transverse machines. d) The core can be laminated (with oxide insulation layers against eddy current losses), with single and bicrystals these are along the magn. Preferred direction to share. The crystal anisotropy etc. must be taken into account; grain-oriented sheets can be used if necessary. e) There are high-permeability materials to use when optimizing Note: From the highest μ _max out all 'alloys and the associated induction B _o t [Tj apply, which is the highest gain. This results in many magnesia in a matrix and cascade arrangement (magnesia battery). It is particularly advantageous to use single crystals which are put together to form lamella packets (due to eddy currents + spin relaxation). f) Pay attention to the pulse permeability and induction stroke with a small ή. g) Attention must be paid to the geometry-related natural resonance of the core (magnetic reversal losses).

Induction by pulse magnetization + pulse compression If the field changes, switching on and off (pulse magnetization + pulse compression) in the Magnesian gives you a very quickly changing magnetic field (therefore high voltages are induced in a second coil / conductive induction ring) and thus a large change in the magnetic field

River.

Magnesian / electric meter with conductive amplifier core

Consequence: reinforcing effect through the ferro / ferrimagnetic core coordinated at Az.

This unit of optimized coil and precisely coordinated reinforcing core is what we call Magnesian or, in the case of ferro- / ferrielectric material, electreser because it uses pulse magnetization (pulse electrification) with pulse compression with high temporally compressed current pulses (non-sinusoidal current / voltage), in time with the motor, fed from the field machine via possibly a backup battery, at the working point A3 of the material, amplified and pulsed _, operated.

2. Active solid-state magnet / electrometer cavity resonator with doped host core as magnetically induced

Emission pump

Principle of magnetic solid-state magneses / electric readers

According to the invention, an analogy to the laser is that magnetically active material is magnetically pumped in the Magnesian.

The active field-solid-state magnet, in the case of the electrically active field-solid-state electrometer, can be implemented in different host crystals. The principle consists of an amplifier core (host crystal plus doped magnetic / electrically active atoms) and induced / or stimulated magnetic / electrical emission ( ^s active magnesia / electrometer)

At the working point of a magn. active ferro- / ferrimagnetic core, this is by means of magnetic pump effect through a strong magn. Cavity forced to vigorously stimulated magnetic emission. The coherent magnetic gain is based on a magnetic population inversion. A host crystal with doped ferro-domes can serve as the active magnetic material, e.g. Doping (approx. 1%) with neodymium, dysprosium, erbium, holmium etc. In the case of the lathanoids, the magnetic states of energy, the so-called 4f shell, which lie deep inside, are gradually removed

Electron spin moments filled. The spin moments of the outer electron shell, which determine the magnetic bond states in the crystal (exchange integral), only slightly disturb the 4f shells. The 4f shells therefore have sharp magnetic energy states that are ideal for generating fixed-frequency magnesia radiation. The oscillation frequency, which must be adapted to the absorption, must be matched to the active material. An HF field B ^' stimulates the transitions in the two directions: absorptions, in which the spin folds into an energetically higher state, and forced emissions, with which it folds into a lower one. The first extract energy from the HF field, the second supply it with energy. The transitions depend on the degree of occupation and the initial state. As an alternative to magn./electr. Cavity can be efficient

High-performance Magneserdiode / Elektreserdiode the pumping process (magnetic excitation generates the magnetic inversion). The above principle works analogously with ferro / ferrielectric

systems; it is not the spin, but the surface charge on the crystal that is decisive for the electrician.

Induced or stimulated magnetic / electrical emission of flux quanta

Example of the magnetic flux quantum (analog for electrical flux quantum).

A flow quantum of energy Spin moment from a high magn. Spin moment energy level E ₂ to a lower magn.

Spin moment energy level stimulate egg (transition rate) → M emission.

A flux quantum of the magn. Energy can also be absorbed and thus a spin moment from the lower magn. Raise energy state Ei to the higher E ₂ (transition rate) → M absorption.

In order to obtain a strongly stimulated magnetic emission, there must be a magnetic inversion, ie N ₂ Nι; the magn.

Occupation inversion is achieved by magnetic pumping using a strong magnJelectr. Cavity resonator forced.

The principle of M emission / M absorption can also be applied to M macros (spin moment collective), such as unit cell, single crystal, grain with their spontaneous

Alignment (spin moment macro) - analogous to a single electron spin moment - can be used in the solid.

Resonator - magnetic interferometer The magnesia can be used with active magnetic material, with electres electrically activated material used in a magn. Resonator with two magn. Mirror, be provided. In this magn. Resonator builds a standing magn. Waves on (magnetic flux quanta) that move in the longitudinal direction repeatedly cross the magnetically active material and become magnetically coherent: while such magn. Waves that the

Take the path diagonally to the longitudinal axis, very quickly the magn. leave active material and are no longer amplified (note crystal ansiotropy). When bundling / strengthening, note the magn. Refraction, which is responsible for this effect. The magn. Mirror Si has a magn. 100% reflection during the

Decoupling mirror S ₂ a low magn. Transmission has. As a result, a fraction of the flux quanta is continuously coupled out.

The magnesian or electric meter works in impulse mode.

resonator

During the magn. Pumping the resonator quality Q is kept artificially low, so that the Magneser does not swing and a high magn.

Cast inversion is built. If you increase the quality at a certain point in time (quality switch), the whole thing is discharged in the magn.

Resonator stored magnetic energy in a short, powerful

Magnetic pulse.

Result: magnetically high monochromaticity and the associated spatial and temporal coherence. Q-switch: magnetic or electrical cells built into the resonator.

Magnetic / electrical Q-switching (Q _m - / Q _β switching)

The excitation energy of the magnetic or electrical inversion can be stored in the magnesian or electres medium if the service life of the upper magnesian state / electreser state is not too short.

Within the disintegration time of the upper state, magnetic or electrical field energy can be pumped into the magnetic / electrical medium with a continuous wave magnifier if the magnesia / electroserosiliation is suppressed at the same time. A Q-switch is used for this, which greatly reduces the quality factor of the magnetic / electric resonator. A magnetic or electrical field gain is built up for a short time, which far exceeds the saturated magnetic or electrical gain of continuous wave operation. When the Q-switch is opened, this large gain briefly leads to the emission of a magnetic or electrical giant pulse.

High performance magnesia / electric meter

The magnetic or electrical field energy can be increased by suitable magnetic or electrical amplifiers. In order to achieve extremely high performance, the magnetic or electrical

Field pulses are initially artificially extended during the amplification process (due to the extreme power density in the amplifier medium). After the amplification, the magnetic or electrical field pulses are simply compressed again and are then available with their extreme power in the short-term magnesia or electric readers.

Magnetically active material

For example, Neodymium in the host crystal with doping (Ny like frozen gas of independent atoms); Host crystal must have excellent magn. Have quality and great thermal conductivity → waste heat.

Magnetic mirror Eg with periodic magnetic refractive index modulation. 3. Magneserdiode, (semiconductor magneser) electreser diode (semiconductor electreser)

The size of the magnetic or electrical band gap is a property of the magnetic or electrical semiconductor material. The magnetic inversion can be done by injection of magnetization carriers

(Magnetrons and magnetron holes based on magnetons (μ _B ^~ ) and

Achieve magneton holes (μ _B ⁺ )) in a magnetic semiconductor with P _m N _m transitions.

The magneton holes are positive magnetized, unoccupied electron spin states (μ _B ⁺ ) and can be combined with a

Magneton spin state (μs ^~ ) with emission of a photon (magnetron)

"Recombine".

Forward operation of P _m N _m transitions in magnetic semiconductors:

In the area of the transition, magnetrons meet in the magnetic conduction band and magnetron holes (see magnetronics) and can be found under

Recombine emission of magnetic radiation (magnetrons).

The magnesia or electrodes diodes can be manufactured in micro (micromagnetronics) and nanostructures (nanomagnetronics). M or E semiconductor system: gap areas of an M or E crystal form the

End mirror of the magn. Stehwellenresonators. The active P _m N _m Pm zone + layer sequence are only a few μm thick. M resonator length L <1 mm.

Application: small machines etc., nanostructures

Operating principle of field force motor 1. Two-magnesian principle

There are now two magneses or electres in the repelling (or attracting) position (antiparallel in repulsion) facing each other, movably mounted on an axis (Fig. 175).

In contrast to the field force generator, there is no field modulator in between - the Magnesians almost touch each other - so the extremely repulsive impulse field force at the poles can be used directly without an air gap reducing the flow.

Only the pole shape can e.g. be designed concave or via the magnetic refractive index (homogenized field) or a Helmholz coil arrangement is selected in order to be able to transmit the repulsive or field force which is attractive in the event of polarity reversal to the pole faces

(= Adaptation to working point A3 and avoidance of excessive mechanical stress peaks in the material).

You can combine a primary magnesia at UT with a second magnesia to reduce the oscillating movement

To combine UT and repulsion at OT, the negative stroke -h is also used (Fig. 176). a) repulsion, b) attraction -F, c) repulsion (reversed), d) attraction -F

Comment: 1) Without pulse compensation: a magnesian is stationary and a magnesian oscillates. 2.) With pulse compensation: two Magnesians oscillate.

A stationary magnesian (stator) and a movable / oscillating magnesian (rotor) can be used as pistons (here no equilibrium states can be achieved with FM as with the FKG), so that the repulsive forces at TDC and the repulsive forces at UT can be used in the machine (boxer engine).

However, two opposing moving magnesians are also possible because of the pulse compensation.

A plunger coil construction can also be used because this has a better force-displacement characteristic with respect to the stroke, which the

Angle of rotation with torque curve on the crankshaft can be better adapted (Fig. 177).

The PM transverse principle can also be used as a reciprocating piston machine (Fig. 178), in which case the air gap remains constant.

Technical information

Because of the rapidly oscillating moving masses, the air coil can be used to reduce the kinetic energy. B. made of aluminum instead of copper - the power-to-weight ratio of the magnesium is then (because of the density and specific electrical resistance ratio) almost a factor of 2 better.

Air or water cooling etc. also increases performance and reduces Joule losses.

In electrical readers, a pair of plates is used instead of the coil to generate the electrical field pulse.

2. A magnesian and an inductor principle A magnesian with a longer ferro-ferrimagnetic core is positioned stationary (stator) and generates a strong one in an AL inductor (AL ring or secondary coil as induction piston = rotor) which is movable on this core Eddy current: The change in the coil current when switched on induces a current in the AL ring, the magnetic field of which is opposite to the field of the coil (Lenz's rule). The ring is pushed off.

When switched off, both fields have the same direction. The ring is put on. We use this AL-ring as a piston so that the repulsive force at TDC and the attractive force at TDC can be used in the machine (Fig. 179).

Nevertheless, the machine can also be used with a second Magneser positioned at UT (use of + F at -h), so that the rejection when the second Magneser is switched on complements the attraction of the primary Magneser (addition of forces / shock waves) (Fig. 180). M = Magnesian, I = inductor, a) M _{1 2} stationary, I oscillating

However, two counter-rotating moveable runners (Magnesian / AI ring) are also possible due to the pulse compensation.

alternatives

As with pure Magnesian operation (without inductor), a plunger inductor principle can be used for another force-displacement characteristic or a transverse inductor principle with a transverse stroke movement.

3. Power output

The output for the power takes place in the field force generator as follows: a) Direct generation of primary energy via traveling wave synchronous generator (linear machine) b) via translation-rotation converter to: - ^.. - ^{. ,} _ - ^{. ...} - three-phase synchronous generator or - the torque directly as a machine drive.

The connecting rod length variator is to be used for the implementation of the work - it enables a direct and immediate implementation of the repulsive shock wave field force at TDC (possibly also at TDC - depending on the design) with a maximum lever arm at φ-90 ^α KW instead of as before with classic crankshaft in internal combustion engines with φ - 6 "to 12" KW, depending on p _max . D. Advantageous effect of the invention

Field force motors with magneses / electreses according to the invention have various advantages. Generation of the work of the field motor

In contrast to the FKG, the FKE uses an excitation system (coil with core = magnesia, or active solid-state magnesia or semiconductor magnesia) instead of permanent fields to generate the repulsive (or attractive) field forces. Analogously, the electric meter (basic electric field) can be used with its various principles.

Instead of a counter-magnet, an inductor can optionally be used, in which the strong magnetic pulse of the magnet generates an induced eddy current with a repulsive field in the inductor. The advantage of this type of engine is that it has less external

Energy supply a coordinated and very high reinforcing effect on the one hand and on the other hand the field forces in the normal direction result in a much higher efficiency than would be possible with tangentially acting motors, although tangential field machines are also part of the claim to the invention (rotary field machines (FKG, FKE).

Both machine types FKG and FKE as reciprocating piston machines therefore have a completely different power / torque and power development than classic rotating electromagnetic machines. As a result, they develop a significantly improved dynamic when used as a drive unit, and the energy of the field battery is permanently available in the case of the FKG. In this respect, energy is "generated" by the field force generator in the sense of a source, because permanent magnetic field energy is converted into mechanical energy.

As a result of the high to extreme amplification, the machine can deliver high to very high dynamics, instantaneous force and instantaneous torque. In contrast to conventional electric drive machines (motors), it eliminates the well-known acceleration inertia of classic electric motors (see e.g. cars).

4. Conrod length variator (PV)

A. Technical field to which the invention relates

The invention relates to force-torque converters that perform a linear movement in a rotational movement with significantly higher efficiency.

B. Relevant prior art

With the classic crankshaft (force-torque converter), work is initiated at maximum combustion pressure of a reciprocating piston internal combustion engine (see p, V diagram) at approx. 6-12 ° KW. The lever arm for generating the maximum torque at maximum

So pressure is relatively small.

C. Technical problem to be solved The subject matter of the invention is a connecting rod length variator which applies the force

90 ° crankshaft initiates and converted into a torque.

D. Representation of the Invention Since the force is greatest at zero distance between the magnets and this force is also to be implemented with a larger lever arm at 90 ° KW, a connecting rod length variator was invented in 4 variants. Basically, the piston remains in TDC or UT position until the crank pin of the crankshaft has rotated from 0 ° (TDC) to 90 ° (TDC ') KW or from 180 ° (TDC) to 270 ° (TDC) KW - the height difference is determined by the

Connecting rod variator balanced.

Crank drive with lever arm at φ = 90 ° KW: the connecting rod length variator

With the field force machine there is a basic need for a different solution than the classic crank drive, because the force-travel characteristic curve drops very strongly at TDC (magnetic vector potential in the normal direction at the pole faces, similar to the Coulomb potential) if it is not by a suitable pole face shape or diving system etc. in the force-displacement characteristic is designed - its maximum force always starts at TDC and not 6-12 ° KW after TDC, like the pressure maximum of a petrol or diesel engine.

The aim of the invention of the connecting rod length variator is to initiate the impulse force at φ = 90 ° KW and to introduce a rest phase for the

PM piston at TDC φ = 0 ° -90 ° KW, while the crankshaft continues to rotate up to φ = 90 ° KW. So you gain time (the PM piston (s) are not moving) to switch the field modulator kinematically slower out of the equilibrium position and to be able to build up the field pressure (open position at OT = imbalance of the PM's), or for the stationary solution, deactivate the corresponding field in the FM at OT (→ rejection of the PM's).

The same principle applies to the UT position, in which the kinematic FM is moved back to the closed position, so that the PM pistons do not repel each other on their way to the TDC position (state of equilibrium).

The active stationary FMs also have the time-delaying problem of building up field forces with maximum pressure, so that the dead time of the PMs can be used in φ = 0 - 90 ° KW.

Solution variants with connecting rod variator (PV):

1. Height function MKZ u. ΔVHZ relative to the KW axis with cam disc NS and tappet on KW a) explicit solution b) implicit solution

2. Height function ΔVHZ relative to the KW-HZ axis with cam disc NS and tappet on KW-HZ = implicit solution (variator system rotates with)

3. Differential gear 2 variator connecting rods, one each for K1 and K2, approximately 180 ° offset HZ (Δφ). 4. Compensating cam disc, stationary 1 variator connecting rod for K1 and K2 with separate stroke divider with 1/2 H K1 and 1/2 H K2.

Function of the PV 1. Kinematic principle / task of the PV

The connecting rod length variator (PV) has the task of keeping the piston in its position constant between the UT position ψ = 0 ° KW and the position OT 'ψ = 90 ° KW while the crankshaft continues to rotate. The same above Kinematic function of the PV is realized between UT ψ = 180 ° KW and UT '= 270 ° KW.

The extension / shortening function of the PV is achieved by a variable upper connecting rod Pi with ΔPi = 2nd crank drive. The connecting rod length control synchronous and phase-related to the crankshaft Rotation can be done according to various principles, which are described below. 2. Construction of the ΔP ₁ connecting rod length variation 2.1 J = function section lengthening / shortening In the function section lengthening / shortening there is no ^ power transmission when the FM is "CLOSED" → relief for ΔPi variator. In the case of sinusoidal FM ₂ opening and simultaneous FM closing of the F i, the force application to Pi or ΔP variator predominates after 1 / 2J FM movement.

The kinematic FM could of course also be moved with a cam with a different function (even opening and closing differently) or mechanically decoupled and moved very quickly with a linear motor just before φ = 90 ° or φ * 270 ° if there was no dead time ( at φ = 0 °) (note kinetic energy, PM attraction and eddy current forces) - in the period before that the ΔPi variator would be without force application. 2.2 ΔPr length variation The ΔPi length variation on the cam plate should be minimized due to the large length or cam disc difference (1/2 ΔPi each) - the decisive factor is the gear ratio of the Pi 'length variator → instead of NS on KW → NS on HZ. 2.3 Counter-movement of magnetic piston K2 With the 2nd piston, the movement of ΔPi ^{2 is} opposite (ΔPi extended, ΔPi ² shortened), since the crank pin HZ is in the opposite KW position. 2.4 Force application The position OTi '(force application + F) and UT force application -F are decisive. The connecting rod length ΔPi is fully extended at item (3) («turning point φ = 180 °), the MKZ has reached the lowest point by shortening between φ = 180 ° → φ = 270 ° = UTι \ so that the stroke is extended the length ΔPi results from the MKZ position. 2.5 Phase-shifted magnetic piston K2 The piston K ₂ is phase-shifted by 180 ° in the control diagram, ie it is in position (4) when Ki is in position (2), both have force + F in this position due to the field battery PM's. 3. ΔPi control diagram 3.1 Explicit solution (Fig. 181, 182, 183) The PV consists of upper connecting rod Pi and lower connecting rod P ₂ . The PV is a 2nd crank drive in the upper piston pin (OKZ) and integrated in the upper connecting rod Pi, it effects the correct phase length compensation ΔPi to the crankshaft position. 3.2 Implicit solution (Fig. 184) The implicit solution has one joint less than the explicit solution. The PV is a second crank mechanism in the upper piston pin (OKZ), integrated in the upper connecting rod Pi, it effects the correct phase length compensation ΔP to the crankshaft position.

The PV consists of connecting rods Pi and P ₂ , whereby the OKZ has now been integrated into the crank pin (HZ) of the crankshaft (one joint less → shorter overall length with a lower center of gravity of the generator / engine). 3.3 Crank pin position

(Fig. 185) shows the kinematic situation with PV for piston K1

(Fig. 186) shows the kinematic situation with PV for piston K2

The kinematic diagram shows that when the HZ-K2 is 180 ° opposite K1

(ψ = 90 ° -Δφ) stands, Δφ for K2 - enters because from the mirrored position OT ₂ φ = 0 ° (= UT _! ^* with K1 φ = 180 °) ΔP _{t is} extended.

In order to be symmetrical in the stroke with K1 and to allow K1-K2 to oscillate in opposite directions, the K2 system must be totally mirrored (red drawing), giving Δφ a + as a sign at φ = 90 °. Consequence: The phases for stroke, extension / shortening change compared to K1.

3.4 ΔPi control diagram with symmetrical introduction of force work + F and idle stroke - F as work stroke. (Fig.187)

4. Conrod length control

4.1 Principle A = height function MKZ u. ΔVHZ relative to the KW axis (Fig. 188)

Construction with NS cam disc and tappet on KW crankshaft.

Control of the center piston pin MKZ and variator crank pin VHZ by a cam disc that rotates relative to the crankshaft

= NS cam disc. The plunger is connected to the PV, see drawing

"Mechanical structure" (Fig. 182). Disadvantage: very sharp curve function

Rolling problem with the roll radius RNR at a concave cam disc point.

Use for: a) explicit principle b) implicit principle.

Drawings Principle A: Cam plate construction for K1 and K2 (Fig. 188).

4.2 Principle B = height function ΔVHZ relative to the KW-HZ axis cam plate construction (Fig. 189)

Section through KW and PV (Fig. 190) View KW and PV (Fig. 191)

Construction with cam disc NS and tappet KW-HZ = implicit principle (P-variator system rotates with).

This variant avoids very sharp concave points on the cam disk and the cam disk that also rotates on the HZ is geometrically smaller, because it is not necessary to realize a large stroke difference for controlling the PV, as with principle A. The tappet is therefore always connected to the connecting rod in its angular direction, but not in its height; a sliding device for guiding and relative movement of the tappet is attached to the connecting rod P ₂ . 4.3 Principle C = differential gear

Principle C: differential, overview (Fig. 192) ejector arm and element designations (Fig. 193) principle Ci crank drive, principle C ₂ eccentric drive (Fig. 194) construction with 2 variator connecting rods, one for K1 and K2, approx. 180 ° offset HZ (Δφ).

The crank pin HZi was positioned using a bracket in its angular position and a radius difference of a gearwheel with r = / 2 ΔP (r = 1/2 height difference between the actual and target bends of the HZ3 with a stationary PZ

→ connecting rod length variation) and provided with a local and co-rotating PV crank drive or eccentric drive, the control of which is carried out with this gearwheel - coupled with outer wheel Z _a and / or inner wheel Z _\ , depending on the control function (= differential gear).

DH the axis of the PV was integrated into the new position of the crankshaft crank pin HZ ₂ , instead of being positioned externally as in principle A and B.

Consequence: the connecting rod HZ ₃ now moves on a compensation curve = target curve (radius with center in PZ as relative and currently stationary)

Point of PZ) around HZ ₂₎ instead of on the actual arc of HZ1. Consequence: The connecting rod journal PZ is constantly locked in its position during the KW rotation from φ = 0 ° to φ = 90 ° KW with the consequence that the piston does not change its TDC position during the KW rotation; the same applies to the UT position. So that no PZ movement occurs, the stroke must be clamped (eg magnetically) during this phase, so that HZ ₃ also follows the desired arc.

Principle C ₁ : P-variator crank mechanism Principle C ₂ : P-variator eccentric drive

Oscillation ΔP: 0 → ΔP _max

1. Movement HZ ₂ on nominal curve 2. Elimination of ΔP a) Crank mechanism with gear ratio i = 4: 1 b) Eccentric drive with gear ratio 1 = 4: 1 ratio i: HZ moves by φ = 45 ° → VP turns α = 180 ° → i = 4: 1 → VP equalizes HZ ₁ according to target curve with HZ ₃

3. Gear coupling a) Outer wheel Z _a 360 ° → with UT → UT no compensation with HZ ₃ b) Acceptance of the sub-oscillation of the stroke between UT → UT '→ if there is no force F from piston K, then ok, → only Z _a c) outer wheel Z _a and inner wheel Z, each divided by 180 ° → compensation at UT → UT → Reversal of direction of rotation d) Planetary gear P on planet gear, Z _a fixed / differential gear 1 / 2ΔP UT → UT ', Zj = crankshaft gear Z _p planet gear

4. Clamping (e.g. magnetic) S of the H movement in PZ without gears

4.1 → no vertical movement OT → OT ', but rotary movement of P by ß.

4.2 OT '→ OT → then release clamping S (= stop), carry out stroke H up to UT. 4.3 UT → UT '→ clamping "on", P swings back by ß and HZ ₃ is free because length H of P is fixed. 4.4 UT '→ OT → -H movement as in 4.2

4.4 Principle D = compensating cam fixed (Fig. 195) Construction with 1 variator connecting rod for K1 and K2 with separate stroke divider with 1/2

H K1 and 1/2 H K2.

The cam disc KS is a stationary KS with outer and inner KS, in the guideway of which there is a cam roller as a variable HZ ₁ - coupled via a swinging boom connected to the crank pin

HZ the KW - with the connecting rod P coupled with HZ1 - moves in such a way that the connecting rod length variation - relative to the crankshaft position - results on the target elbow. There are sharp turning points on the inner KS, which are indicated by a

Material application on the inner web with the thickness d can be formed into a radius of curvature equidistant from the outer web, so that there is less non-linear unwinding and wear. The radius of the cam roller results in the equidistant guideways with the corresponding acceleration function.

Extended invention application of the connecting rod length variator on reciprocating piston combustion machines, compressors, pumps and other force-torque converters

1. Classic reciprocating piston machines

Classic reciprocating engines work with 4 strokes: intake - compression - combustion - exhaust. Since the beginning of engine development in the classic reciprocating engine, no new kinematic principles have been applied (except

Rotary piston engine). The engine principle was supplemented by a turbocharger / compressor, air cooler, intercooler, valve control and stroke control for adjusting the compression according to the current operating state of the machine. b) The 8-day machine with connecting rod length variator: 8-stroke engine / compressor / pump

Performance increase / consumption reduction factor approx. 4-8 advantages over classic reciprocating piston engine: approx. 4-fold torque / output or corresponding reduction in consumption compared to a comparable classic reciprocating piston machine.

2.1 New kinematic principle

According to the invention, the 8-stroke engine / compressor / pump works according to the new kinematic principle, the connecting rod length variator, which is used in the

Reciprocating combustion engine (petrol, diesel, gas) can increase both the torque and the power by a factor of approx. 4.

2.2 Increasing the thermal effect 2.2.1 Thermal efficiency

In addition, with this new design there is also an increase in thermal efficiency through two additional cooling phases during suction / compression and ejection. Side effect: the thermal load after burning is lower.

2.2.2 Better mixture formation

Furthermore, a significantly better mixture formation is automatically present in the additional cycles due to a new timing of the entire work process, which also leads to an increase in performance.

2.2.3 Better combustion

The kinematics of the connecting rod length variator also allow better combustion without gas expansion in the work cycle, which also leads to an increase in performance.

2.2.4 Other effects and advantageous effects of the invention

The invention of the connecting rod length variator also allows a) more power in a smaller space with full mass balancing (low vibration). In addition, b) a work cycle is effective during idle stroke and c) the permissible maximum speed is higher (due to different pre-ignition control). The filling is also higher if a loader with the connecting rod length variator and 8-stroke principle is used.

3. Result of the invention

Both the economic and the ecological effects are considerable for the consumer - performance increase or consumption reduction by a factor of about 4-8 compared to today's internal combustion engines. This is of additional economic importance, as is the greenhouse effect (CO ₂ emissions).

These new connecting rod length variator principles can be used for engines, compressors, pumps and other force-torque converters. E. Advantageous Effects of the Invention A connecting rod length variator according to the invention has various advantages. The consequence of the invention of the PV is that the power and work (W = JF-s) with SOK / V initiation results in a significantly higher torque (M = Fr) and thus also increases the power (P = M ω) of the machine , It is about the implementation of the work, ie the path s (stroke h) must be retained, which means that the crank pin must have a radius r = s (instead of classic r = s-0.5), because only 1 / 2 of the route OT-UT, due to the discharge at 90 ° (OT ') KW, used. So if the work in the p, V diagram (W = JF s) remains the same, but the implementation via the force-torque converter with integrated PV results in a higher torque, the efficiency of the work or energy conversion is in accordance with the conversion ratio considerably larger than in the classic crankshaft. The conrod length variator is designed so that even the negative stroke (-h) at UT can be given a thrust force (force: + F at + h = 90 ° to 180 ° KW and -F at -h = 180 ° to 270 ° KW). Movement time and kinetic energy of the FM with a connecting rod length variator The shifting from TDC to TDC 'at φ' additionally causes the connecting rod to shorten during this time (connecting rod shortening from φ 270 ° to 90 ° KW) by the connecting rod length variator, the PM piston in the TDC position until the crank loop has reached φ '(max. 90 ° KW). During this rest period, the FM can be moved out / in transversely much slower than when moving in the normal crank loop at TDC (in the "OPEN" position or vice versa in the "CLOSED" position), which means a lot of kinetic energy, due to the lower acceleration deceleration with FM, this dwell time starts at KW φ = 0 °, since the PM pistons are at rest and the KW rotates further until KW φ = 90 ° and the connecting rod is extended by ΔPi The switching time of the stationary FM can be extended considerably - with a classic crank loop the piston already moves from TDC to the bottom, although the maximum force has not yet been reached. The following connecting rod length variator variants are claimed by the invention: Principle A: Height function MKZ and ΔVHZ relative to KW axis principle B: height function ΔVHZ relative to the KW HZ axis principle C: differential gear principle D: differential cam plate fixed The connecting rod length variator Can also be used in reciprocating internal combustion engines and other machines in which the translation is to be efficiently converted into rotation: as an efficient force-torque converter. 5. Magneto-electric field force masc me (FKM)

The FKM system configuration puts the two previously mentioned FKM sub-systems and operating principles of field force generator, possibly with a semiconductor field modulator and field force motor, possibly with a connecting rod length variator principle, in a coordinated functional relationship, so that a completely new drive unit is provided: the invention of the field machine.

Principle of action 1st field force generator (FKG)

As set forth in the previous descriptions, the field machine as a field force generator FKG generates magnetic energy (force or torque) via magnetic (magnet) or electrical (electret) equilibrium-imbalance-equilibrium states with a field modulator, which is then used to generate Primary current can be used (oscillating traveling wave linear machine, three-phase machine, etc.). The FKG solid-state solution does not require any moving parts and can generate primary current directly by induction if the stationary FM is switched "OPEN" and "CLOSED" → generation of the current by induction itself quickly in time - through the FM switching process - changing magnetic field (stationary

Field modulator, FM types → FM system; M-semiconductor FM) (Fig. 196).

2.Field force motor (FKE)

The field force motor requires external electrical primary energy, which is multiplied by amplifiers in the Magneser or Elektreser.

This amplification effect is enormous, so that a new, highly dynamic electrical machine which - due to the giant impulse - emits a large force or a large torque is given according to the invention. Field force machine system

A new autonomous drive system is created by a suitable coupling of the field force generator and the field force motor: The field force machine as a new energy source or drive system (Fig. 197).

Bezügszeichen. Symbols for enemy power machmas

1. FKM systems

FKM field force machine Effect by 2 permanent magnets or 2 permanent electrets and by a field modulator

FKG field force generator

M-FKM magnetic field machine (based on PM)

E-FKM Electric field machine (based on PE) WKM heat engine

FM field modulator

PM permanent magnet (magnetically hard ferro- / ferrimagnetic material)

PE permanent electret (electrically hard ferro / ferrielectric material) PS permanent superconductor magnet

FB field battery (multiple arrangement of elementary magnets / electrets (button cell) in x-y matrix and z cascade

M-FB magneto field battery

E-FB electric field battery FS flux guide

FP river plate

PS pole piece

EG electric generator

EB electric battery MB magneto battery

FKE field force motor

M-FKE Magneto field force motor

E-FKE electric field force motor

FQT field quantum transistor ET electron transistor

SL superconductor

SM superconductor magnet

2. FKM parameter I current

F force

M torque

A pole face

B magnetic induction (magnetic flux density) H magnetic field strength

J magnetic polarization (contribution of matter to the flux density) μo permeability constant (magnetic field constant) μ _r permeability number μ permeability d air gap length s FM thickness

T _c Curie temperature

TDC top dead center crankshaft

Bottom dead center crankshaft KW crankshaft φ crankshaft angle h stroke

Reference symbols, symbols for connecting rod length variators

elements

KW crankshaft

WZ crank pin HZ crank pin

K1 piston 1

K2 piston 2

PZ connecting rod pin OKZ Upper piston pin

MKZ Middle piston pin

UKZ lower piston pin

P connecting rods

Pi upper connecting rod P ₂ lower connecting rod

VW variator shaft

P1 -K1 (I) connecting rod P1 from piston 1, side 1

P2-K1 (I) connecting rod P1 of piston 1, side 1

P1-K2 (l) connecting rod P1 from piston 2, side 1 P2-K2 (l) connecting rod P1 from piston 2, side 1

P1-K1 (ll) connecting rod P1 from piston 1, side 2

P2-K1 (II) connecting rod P1 from piston 1, side 2

P1-K2 (ll) connecting rod P1 from piston 2, side 2

P2-K2 (ll) connecting rod P1 from piston 2, side 2

KS cam

NS cam disc

NS-K cam disc pistons

NS-FM cam disc field modulator NR cam roller

S pestle

S-K1 (l) plunger K1 side l

S-K2 (l) ram K2 side l

S-K1 (ll) plunger K1 side II S-K2 (II) plunger K2 side II

S-FM (I) plunger field modulator side I

S-FM (II) plunger field modulator page II

K1-V (l) piston 1, ΔPi length variator, side I K2-V (l) piston 2, ΔPi length variator, side I

VWZ variator pin

VHZ variator crank pin

VPZ variator connecting rod journals parameter

CL-V Centerline connecting rod length variator

CL-KW Centerline crankshaft

ΔPi connecting rod length difference

ΔPrK1 (l) Difference connecting rod length piston 1, side I

ΔPι-K2 (l) Difference connecting rod length piston 2, side I φ crank shaft angle

Δφ asymmetrical HZ difference ΔPi ≠ H at φ = 270 ° KW

TDC top dead center at φ = 0 ° KW

OT 'top dead center at φ = 90 ° KW

OTi 'top dead center K1 at φ = 90 ° KW, symmetrical construction at ΔP ^ H

OTi 'OT for K1 at φ = 90 ° -Δφ for K1, asymmetrical construction at ΔPι = H

UT bottom dead center at φ = 180 ° KW

UT 'bottom dead center at φ = 270 ° KW

UTV UT for K1 at φ = 270 ° + Δφ for K1, asymmetrical because H ≠ ΔPi (→ ΔPι = H, then symmetrical)

UTi 'UT for K1 at φ = 270 ° + Δφ for K1, symmetrical construction at H = ΔPι

H stroke

Rv radius VW-MKZ = 1 / 2ΔP! (= 1 / 2Rκw)

RKW Radius KW-HZ

+ F force at + H

-F force at -H

V level

Reference symbols, symbols for construction of connecting rod length variation and stroke

Output data

0FB diameter field battery = magnet

H _eff effective stroke H / D stroke ratio stroke H to bore D (short stroke 0.9 ... 0.7 - long stroke> -1 → 1.1 ... 1.3) RKW radius KW-HZ

P ₂ = λ-Rκw λ = l / r; r = crank radius, l = connecting rod length, variable λ = 3.0-4.5 (→ Vogel technical book, the master craftsman examination) Connecting rod triangle PZ-HZ- _K vv W middle crankshaft a = Rκw b difference Mκw-PZ at φ = 90 ° KW at (OT) c connecting rod length P2 = λ-Rκw

Extension shortening Pi by ΔPi

ΔRKW = c-b

ΔP _T = R w + ΔRκw

stroke

H ⁼ RKW- ΔRKW

H «= 1 / 2H stroke with two opposing pistons, each piston / from center FB

ΔH height difference at -Δφ

ΔH height difference at + Δφ

Hub / bore

H / D limit speed v _m ax limit speed = H f (Vmax = 16 m / s for Kurzhuber with H / D = 0.9-0.7) f frequency n speed

Principles A, B, C, D of the connecting rod length variator

Principle A: height function MKZ u. VHZ relative to the KW axis

RNS radius cam disc

ΔMKZ height function (level VMKZ)

ΔVHZ height function variator crank pin (level WHZ)

ΔR-NS function radius change cam disc (roll curve)

RNR radius cam roller s thickness field modulator d air gap

Principle B: Height function ΔVHZ relative to the KE-HZ axis no new elements and parameters

Principle C: differential gear elements

A boom, rigid

HZ original KW crank pin at φ-0 ° HZi construction HZ, intersection Rp with R

HZ ₂ new KW crank pin on boom A

HZ ₃ rotating crank pin connected to the connecting rod → Movement on the nominal curve by rolling the gearwheel Z _p onto the Z _a P connecting rod VP variator connecting rod

PZ connecting rod pin

PZ 'connecting rod journal at UT

--a external gear

Zi internal gear (crankshaft gear)

ZP planet gear

E eccentric

parameter

Bi HZ-actual sheet

B ₂ HZ target sheet

B ₃ HZ ₃ -stst-Bogen

B ₄ HZ ₃ target sheet

ΔP connecting rod length variation i gear ratio

VPα Angle of rotation variator conrod with HZ ₃ ß conrod angle between new position VOT φ = 0 ° and VOT 'φ = 90 °

Y Angle of the variator connecting rod = 45 ° at φ = -45 °, + 45 °, + 135 °, 225 °

<PHZ KW angle of the HZ

RP radius of connecting rod bend = c

R'KW MKW ZU intersection radius Rp with parallel line a to centerline a = radius RKW. Position HZ3 = intersection R'KW with R _P

calculate b: c = R _P d = Rκw + bc g = Rκw + be eccentricity

S clamping (stop)

Principle D: Compensating cam disc fixed

A bracket with joint in HZ

KS fixed cam

KR cam roller

WP turning point on inner curve d material application to form a radius at the turning point

Bi HZi target sheet (upper track + H)

B2 HZi target curve (lower path -H) Selected literature

Literature field machine

1. Gerthsen Physik, D. Meschede, A21, Berlin; Heidelberg; New York: Springer, 2002

2. R. Boll, Soft Magnetic Materials, A4, Berlin; Munich: Siemens-Aktiengesellschaft [Dept. Ed.], 1990

3. Bergmann Schaefer, Volume 2, Electromagnetism, W. Raith, A8, Berlin; New York: de Gruyter, 1999 4. E. Hering, R. Martin, M. Strohrer, Physik für Ingenieure, A8, Berlin; Heidelberg; New York; Barcelona; Hong Kong; London; Milan; Paris; Tokyo: Spinger, 2002 5. D. Spickermann, materials for electrical engineering and electronics, Weil der Stadt: J. Schlembach, 2002 6. Specialist in electrical engineering, Europe teaching materials, A23, 42781 Haan-Gruiten: Verlag Europa Lehrmittel, 2002

7. Electrical engineering table book, Europa Lehrmittel, A18, 42781 Haan-Gruiten: Verlag Europa Lehrmittel, 2001

8. Brechmann, ..., electrical engineering tables, Westermann publishing house 9. Stöcker, paperback of physics

10. dtv-Atlas Physik, Volume 1

11. Bosch, automotive paperback, A24 Braunschweig / Wiesbaden: Friedr. Vieweg & Sohn, April 2002

12. H. Lindner, H. Bauer, C. Lehmann, paperback in electrical engineering and electronics, A7, specialist book publisher Leipzig, Munich; Vienna 1999

13. K. Schwister and others “Taschenbuch der Chemie, A2, Fachbuchverlag Leipzig, Munich; Vienna 1999

14. Specialist in automotive engineering, A27, Verlag Europa Lehrmittel, Haan-Gruiten 2001 15. Braun, E., Elektromagnete. In: Kohlrausch, F .: Practical Physics, Vol. 2, 23A, Stg. B. G. Teubner 1985 (→ pole shoes, bitter coils)

Literature Example field machine 1. Technical knowledge automotive technology, Europe teaching material (1-571): generators, three-phase generator, claw pole rotor 1600W, 14V, 120A, note heat loss (1-253): vibration damper for crankshaft (1-255 dual mass flywheel 2. Jörg Hoffmann, paperback of Measurement technology, A3 (2-233): Measuring forces (2-235): Inductive, capacitive and strain gauge force transducers Principle of force measurement with spring body The deformation that is measured via displacement or strain transducers can be used to determine the acting force ,

3. Vieweg, manual automotive engineering (3-111): lithium batteries (1-106): electric drives, converter-fed asynchronous motor (3-107): three-phase motor: synchronous permanent motor with a high number of poles and highest efficiency, n _m8X 15,000 1 / min

(3-133): crank mechanism, connecting rod ratio

(3-180-181): Reciprocating drive with variable compression (stroke)

Claims

First independent claim: Field machine consisting of a field force generator (FKG)

1.Field force machine (FKM), consisting of one or two force field circles as a space in which one field spreads in its entirety, alternatively with magnetic or electrical or thermal or gravitational potential field or vortex field or dipole field generating field battery (s) (FB) in antiparallel (repulsive force field) or parallel (attractive force field) pole orientation, characterized in that the field force machine (FKM) as a field force generator (FKG), made of kinematic or stationary field modulator (FM), which is located between the field battery (s) (FB), consists. The field modulator (FM) modulates the field flow / current (Φ) and the field voltage flooding (Θ) as the effect of a field capacitor between the repelling field battery (s) (FB) and the attracting field modulator (FM) or the attracting field battery (s) (n) (FB) with repulsive field modulator (FM). The field modulation takes place in whole or in part from flux-conducting to flux-non-conducting by varying capacities. The supply of the field modulator work W _{to be} modulated by switching and / or strengthening therefore the field force (repulsive or attractive) in the work cycles of the field machine, oscillating between the equilibrium and non-equilibrium state. Therefore, the field battery (ies) (FB) with position field modulator (FM) "to from the field force F and the working path Wi (= stroke h) between the TDC and BDC position arises in the non-equilibrium state of the work W, while _the Field batteries (FB) are moved back in the equilibrium state without counterforce in the idle stroke path W _2. The force can be converted into a torque M or power P via a force-torque converter, preferably a connecting rod length variator (PLV) Field force machine (FKM), type Feidkraftgenerator (FKG), runs in 4 cycles in an irreversible cycle (pV-diagram) .The field force generator can also be used as a solid-state arrangement - without moving parts - with a field battery (FB) and two field modulators (FM), arranged in a force field circuit with an induction coil, for electrical energy extraction, are produced by modulating the field in the solid-state field force circuit with the field modulator (FM) I changing field and thus in the coil integrated in the field force circuit by induction electrical energy.

FKG principle 2. Field force machine according to claim 1, characterized in that the field force generator (FKG) can be operated as a left-hand or right-hand cycle process machine.

3. Field engine according to claim 1, characterized in that the system field battery field modulator field battery (FB-FM-FB) acts as a capacitor for the control / amplification / attenuation / storage of fields, preferably magnetic or electric fields are used. Thermal fields with thermal force or gravitational fields with gravitational force are also possible

4. Field machine according to claim 3, characterized in that the field modulator (FM) in the magnetic capacitor field as a dimagnetic or diamagnetic, in the electrical capacitor field as a dielectric or diaelectric, in the thermal capacitor field as a dither or diathermic and in the gravitational capacitor Field as digravitum or diagravitum, acts.

5. Field force machine according to claim 4, characterized in that a capacitor system acting in reverse with respect to the force fields is used as an anti-capacitor principle.

6. Field force machine according to claim 3, characterized in that ferro / ferrimagnetic or ferro / ferrielectric field capacitors act as solid liquid constant or adjustable components, analogous to electronic capacitor components, depending on the level of permeability or permittivity.

7. Field machine according to claim 1, characterized in that the kinematic field modulator (FM) and / or pole piece (PS) are moved transversely either in the potential field parallel to the field lines of the field battery (h) (FB) or perpendicular to the field lines on an equipotential surface can, whereby a simultaneous or serial equilibrium of the transverse work W _{2U is} achieved by compensating for the transverse static and / or dynamic field forces.

8. Feidkraftmaschine according to claim 1, characterized in that the kinematic field modulator (FM) can be designed in a passive or active version, the active version uses a dynamic in the normal and / or transverse direction in the gain effect adjustable or bistable switchable auxiliary fields, so that the field forces of a passive field modulator (FM) and / or the compensation of frequency-dependent eddy current forces can be strengthened or weakened with the overlay by the auxiliary fields.

9. Field machine according to claim 1, characterized in that the field battery (s) (FB) as the first FB drive set-piston pair (K1), in cycle 4 in the equilibrium state with the field modulator (FM) closed, returned to the starting position are by a fields or by a crankshaft with connecting rod length variator (PV) and flywheel or by a ball screw with spring and free-wheel clutch, or by push rods with free-wheel clutch, or by a second one offset by 180 ° KW in work cycle 2 on the crankshaft (KW) FB drive kit piston pair (K2), or by others Recirculation systems.

Field batteries (FB)

10. Field force machine according to claim 1, characterized in that the field battery (s) (FB) for generating a high field force e.g. in a 3D sandwich construction in the xyz network (i.e. by lining up many cells with rows and columns to form one or more groups in a matrix and then building up layers in the z direction) or with round cell field batteries (FB) in a triangular network and Layer structure is (are) arranged in the z direction.

11. Field force machine according to claim 1, characterized in that the field battery (s) (FB) preferably in a magnetic field from permanent magnet (s) (PM), made of ferro / ferimagnetics, or superconductor magnet (s) (SM ) or in the case of an electrical field from permanent electret (s) (PE), made from ferro / ferrielectrics.

12. Field machine according to claim 11, characterized in that the permanent magnets (PM) or permanent electrets (PE) to reduce the kinetic energy in their adhesive force-to-own weight ratio under repulsion conditions are optimized so that no demagnetization or de-electrification at air gap flow / shear and at a given working temperature T.

13. Field force machine according to claim 11, characterized in that the force-displacement characteristic curve acting in the normal direction of the permanent magnets (PM), superconductor magnets (SM) or permanent electrets (PE) in their profile through a special field design ( Pole shaping, convergence center advance with Korπorientierung in magnetization / electrification, pole structuring, cone and immersion system), can be designed to achieve a certain force and torque deployment and / or stroke increase.

Field modulator (FM)

14. Field force machine according to claim 1, characterized in that the field modulator (FM) for modulating the field effect between the field battery (s) (FB) and the field modulator (FM), i.e. the field capacitor, from the states equilibrium - non-equilibrium - equilibrium, can be positioned as an inline field modulator inside or as an outline field modulator outside the substance limits and poles of the field batteries (FB).

15. Field force machine according to claim 1, characterized in that the field modulator (FM) by conductivity modulation and / or channel cross-section modulation with a field transverse to the flow direction of the force field of the field battery (s) (FB) the Feidfluss or the field voltage and thus controls the balance / non-equilibrium.

16. Field machine according to claim 1, characterized in that the field modulator (FM) and / or pole shoe (PS) is composed of isotropic and / or anisotropic atomic / molecular and / or microscopic / macroscopic layers oriented parallel or perpendicular to the field direction, taking into account the shape anisotropy is and in technically predetermined directions consists of differentially and functionally different field conductive, field non-conductive or field semiconducting material.

17. Field machine according to claim 1, characterized in that a conductivity flux density field modulator (FM) with a given conductivity-flux density characteristic of a soft material in the hysteresis loop shape by locally effective flux density change of maximum material conductivity at the working point (A ₃ ) over others flux density-dependent conductivity action points modulate the field flow of the field battery (s) (FB) from conductive to non-conductive.

18. Field force machine according to claim 1, characterized in that a flux density field strength field modulator (FM) with a given flux density field strength characteristic of a soft material in the hysteresis loop shape by locally effective field strength change of maximum material conductivity at the working point (A ₃ ) over others Field strength-dependent conductivity effects modulate the field flow of the field battery (s) (FB) from conductive to non-conductive.

19. Field force machine according to claim 1, characterized in that a flux density-temperature field modulator (FM) with a given flux density-temperature characteristic of a soft material in the hysteresis loop shape by locally effective temperature change of maximum material conductivity at the working point (A3) over other temperature-dependent Conductivity effects modulate the field flow of the field battery (s) (FB) from conductive to non-conductive.

20. Field machine according to claim 1, characterized in that an anisotropy field modulator (FM) with a given conductivity-directional characteristic of a crystalline, in the hysteresis loop soft material by locally effective change in direction of the preferred field direction of the crystals of maximum material conductivity at the working point (A ₃ ) modulates the field flow of the field battery (s) (FB) from conductive to non-conductive via other direction-dependent conductivity action points.

21. Field machine according to claim 1, characterized in that an anisotropy field modulator (FM) with a given conductivity-stress characteristic of a soft material in the hysteresis loop shape by locally effective mechanical stress change of maximum material conductivity at the working point (A ₃ ) over other stress-dependent Conductivity action points the field flow of the field battery (s) (FB) from conductive to non-conductive modulated.

22. Field force machine according to claim 1, characterized in that a permanent induction field modulator (FM) with a given flux density-field strength characteristic of a hard material in the hysteresis loop shape by locally effective remanent flux density change from maximum remanent flux density to other flux density action points according to the hysteresis minimal or negative remanent flux density variably modulates the field flow of the field battery (s) (FB) through the remanent field from the equilibrium to the imbalance between the field battery (s) (FB) and the active induction field modulator (FM).

23. Field force machine according to claim 1, characterized in that an induction current field modulator (FM) with a given electrical conductivity-induction characteristic of an electrically highly conductive material by generating eddy currents, the field flow of the field battery (s) (FB) by the variably induced field forces from Balance to imbalance between field battery (s) (FB) and the active induction current field modulator (FM) modulated.

24. Field force machine according to claim 1, characterized in that a cut-off frequency conductivity field modulator (FM) with a given conductivity cut-off frequency characteristic of a soft material in the hysteresis loop shape by locally effective cut-off frequency change of maximum material conductivity at the working point (A ₃ ) over others limit frequency-dependent conductivity action points modulate the field flow of the field battery (s) (FB) from conductive to non-conductive.

25. Field force machine according to claim 1, characterized in that a spin resonance field flow direction field modulator (FM) with a given spin resonance field flow direction characteristic of a soft material in the hysteresis loop shape by locally active high-frequency excited spin direction change of maximum material conductivity with parallel spin position after minimal conductivity flipped with antiparallel spin position to modulate the field flow of the field battery (s) (FB) through the spin direction switch from conductive to non-conductive.

26. Field force machine according to claim 1, characterized in that an atomic spacing conductivity field modulator (FM) with a given atomic spacing-conductivity characteristic of a soft or hard material in the hysteresis loop shape by locally effective geometrically defined atomic spacing change of maximum material conductivity at the working point (A3 ) modulates the field flow of the field battery (s) (FB) from conductive to non-conductive via other atomic distance-dependent conductivity action points.

27. Field machine according to claim 1, characterized in that a tunnel effect field modulator (FM) with a very thin magnetic field modulator insulating layer (l _m ), a dimagnetic, between two magnetic superconductors with a given magnetic tunnel voltage-conductivity characteristic and locally effective magnetic energy gap by applying a magnetic tunnel voltage accelerated magnetic flux quanta through them Field modulator insulating layer (l _m ) can tunnel through and thus modulates the magnetic field flux of the superconducting field batteries (SM-FB) depending on the tunnel voltage from conductive to non-conductive.

28. Field machine according to claim 27, characterized in that a magnetic superconductor insulating layer superconductor contact (S _m lmS _m contact) is present when the two magnetic superconductors consist of the same magnetically conductive superconductor and can therefore tunnel through magnetic flux quantum pairs.

29. Field force machine according to claim 28, characterized in that a magnetic direct current effect (MGE) arises when a weak magnetic direct current / flux is impressed on an S l Sm contact so that it is below a critical magnetic one. Current / flux strength, i.e. without magnetic potential difference, tunneling magnetic flux pairs as spin moment couplings through the Im layer and above the critical magnetic current / flux strength the field flux between the superconducting magnetic field batteries (SM-FB) is blocked.

30. Field force machine according to claim 28, characterized in that a magnetic alternating current effect (MWE) arises from a quantum mechanical interference if, when a magnetic direct voltage is applied to the SmlmSm contact, a magnetic alternating current proportional to this magnetic direct voltage is produced from flux quanta, with the property that this principle also works with reverse imprinting.

31. Field machine according to claim 1, characterized in that a superconductor field modulator (FM) as a S l _m S _m contact with a thick magnetic insulating layer l _m or as a S _e lsS _e contact with a thick electrical insulating layer i _e , constructed from Supra -Leaders and / or super-non-conductors and / or super-semiconductors, the modulation of the field flux at step temperature Tc or between normal temperature T and step temperature Tc.

32. Field force machine according to claim 1, characterized in that the gap which arises when the field modulator (FM) is switched between the field battery (s) (FB) is preferably bridged by one or two pole shoes (e) (PS), so that the force or the - work loss W _a in the force-displacement characteristic of the field battery (s) (FB) is minimized.

33. Field force machine according to claim 32, characterized in that the field modulator (FM) and / or the pole shoe (s) (PS) consist of isotropic and / or anisotropic material and are laminated for optimal field conduction, so that the field flow in the Lamella sheets using a strong crystal anisotropy and / or large shape anisotropy with respect to the geometry of the lamella sheets preferably, depending on the direction of the lamella sheets, are primarily directed in the normal or transverse direction and thereby the reaction to the force field (s) of the field battery (s) ( FB) is minimized because of the crystal and shape anisotropy.

Compensation for negative field forces

34. field machine according to claim 1, characterized in that a temperature compensation for controlling the equilibrium state between the field batteries (FB) and the field modulator (FM) by an external temperature control of the field machine, e.g. by "heat pipes" with Peltier batteries etc., and / or by a direct temperature compensation of the field batteries (FB) by the course of the flux density-temperature characteristic of a compensator system and / or by a stroke variation with Δh, the adjustment of the operating point of the system Field battery (s) (FB) and field modulator (FM) when the temperature changes.

35. Field force machine according to claim 1, characterized in that in an electrically conductive field modulator substance, a mechanical and / or electrical and / or magnetic anti-vortex current compensator which in the field modulator (FM) frequency-induced and therefore functionally negative acting field forces compensated or practical eliminated.

36. Field force machine according to claim 33 and 35, characterized in that a mechanical anti-eddy current compensator from parallel mutually oriented electrically mutually insulated thin lamella sheets with perpendicular to the field modulator movement and to the eddy currents in the lamella sheets integrated slots with respect to the field flow direction between the poles the field batteries (FB), which can alternatively consist of mutually electrically insulated, dense, soft magnetic spherical packing or a cubic microstructure with transformation of the volume eddy currents into particle eddy currents.

37. Field force machine according to claim 35, characterized in that an electrical anti-eddy current compensator is created by electrical charge separation with removal of the electrons from the effective area of the fields of the field batteries (FB) in that the field modulator (FM) is electrically isolated and within an electrical Field is positioned so that a central area is created as a neutral zone by electrical influence, which is penetrated by the magnetic fields of the field batteries (FB) without generating eddy currents.

38. Field force machine according to claim 37, characterized in that the influenced charge carriers are concentrated within two metallic funnels with a tip firmly connected to the field modulator (FM) and are grounded via an electrically highly conductive cutting edge along the oscillation path of the field modulator (FM) by contactless transfer be derived or in an energy store, e.g. Leiden bottle or condenser, stored are available.

39. field force machine according to claim 35, characterized in that with transverse movement of the kinematic field modulator (FM) the inhomogeneous field of the field battery (s) (FB) is designed transversely in its gradient profile so that the two force vectors of the Lorentz force the circulating current, ie the braking force at the front and the accelerating force at the end of the field modulator (FM) are the same.

40. field machine according to claim 36 and 39, characterized in that in the transversely inhomogeneous field, the transverse increase in the material width of the individual webs in the lamellar plates is designed such that a narrow web width on the front of the field modulator with a small braking force component in a wide web Bridge width at the end of the field modulator passes, which creates the balance between the force components with a large accelerating force component.

41. Field machine according to claim 36 and 39, characterized in that in the transversely inhomogeneous field, the transverse wedge profile or the function of increasing the web thickness of the individual webs in the lamellar plates is designed so that the braking component in the single web at the front edge of the wedge profile is much smaller than the accelerating force component at the thick end of the wedge profile, with which the front and rear volume flow force components are in balance.

42. Field machine according to claim 35 and 36, characterized in that in the transversely inhomogeneous field, a lamella sheet and / or the webs of the lamella sheet as a rectangular gradient conductor loop with different conductor cross sections at the front and end and / or spec. Electr. Resistance are formed and therefore balance with the associated front and end force components of the induced eddy current ring as a pair of current elements with opposite current directions.

43. Field force machine according to claim 35 and 42, characterized in that an integrated in the field modulator (FM) anti-bilge force compensator from a second conductor loop with oppositely directed unipolar currents from positive charges and magnetic shielding between the negative and positive Leiferschleifen exists so that the Lenz force of the negative induced currents is compensated by that of the positive.

44. Field force machine according to claim 35 and 42, characterized in that an integrated in the field modulator (FM) anti-bilge force compensator consists of a conductor loop with in the field-effective range of the field battery (s) (FB) parallel conductors with rectified currents and therefore the weakening of the field between the rectified currents reduces or prevents the reaction of the induced magnetic field on the primary field of the field batteries (FB).

45. field force machine according to claim 35 and 42, characterized in that an integrated in the field modulator (FM) anti-bilge force compensator from a magnetically asymmetrical direction-dependent shield (permeability tensor occupied on one side) or from a field semiconductor diode, which consists between Field modulator (FM) and field battery (s) (FB) is positioned so that a reaction of the induced field at the working point of the shielding substance is impossible.

46. Field force machine according to claim 35 and 42, characterized in that an integrated in the field modulator (FM) anti-bilge force compensator consists of a movement-dependent anti-field effect, which by magnetic compensation with a dimagnetic (attractive) and / or Diamagnetic (repulsive) creates the movement-dependent equilibrium.

47. field force machine according to claim 35 and 42, characterized in that an integrated in the field modulator (FM) anti-bilge force compensator consists of a conductor loop at an angle of 45 ° to the surface normal of the field battery (s) (FB), which on conductor loop branches with different cross-sectional areas and / or spec. elec. Resistance in the front and end conductor loop branches. and therefore, when an induced eddy current ring occurs in the inhomogeneous field with oppositely directed weakly braking front and strongly accelerating end force vectors, the bilge force is prevented by self-compensation.

48. field machine according to claim 1, 35, 36, 37, 38, characterized in that alternatively in the Aπti-Lorentz compensator of the electrically conductive field modulator (FM) and / or Pohlschuhs (PS) combines electrical and magnetic anti-Lorentz principles be that the occurring electrical and magnetic influence is rectified (Fig. 40) or crossed (Fig. 41).

49. Field force machine according to claim 35, characterized in that the geometry of a drop-shaped field streamlined body is designed so that the field pressure drop of the flow around the field along the field streamlined body takes place so slowly that none Field eddies can occur.

50th field force machine according to claim 1 and 35, characterized in that the geometry of a drop-shaped field body profile is curved so that a convex and concave side arises and therefore with a field flow / field flow Φ a field circulation around the field body profile, which arises on the convex Generates higher field flow velocities than on the opposite concave side, with the result that a field overpressure area is created on the convex side and a field underpressure area is created on the concave side, so that a dynamic field force FA is effective which corresponds to the Lorentz force F is directed in the direction of the concave side if the field circulation direction of the flow around the field / flow around the field is oriented in the same sense as the field circulation direction of the induced magnetic field, so that F is compensated for with field flow technology using the appropriate FA. If the convex side of the field body profile points in the direction of FL, i.e. if the field circulation of the field flow / field flow is opposed to the field circulation of the induced magnetic field, the repulsive Lenz force of the magnetic field induced in the field body profile is applied to the primary field of the field battery (s) ( FB) compensated. The aforementioned operating principles are to be applied technically analogous to a rotating electrically conductive cylinder.

51. Field force machine according to claim 1, characterized in that the transverse force work in the kinematic field modulator (FM) and / or pole shoe (s) (PS) is compensated in a transverse compensator in order to balance the forces F and / or the work W _to obtain.

52. Field force machine according to claim 51, characterized in that a stationary active compensation by a coil with a reinforcing core at the working point A _{3 of} the material as a longitudinal field or transverse field coil compensator with a to the transverse force-displacement characteristic of the field battery (n) (FB) precisely adapted transverse force-displacement characteristic of the compensator with dynamic, frequency-dependent intensity control.

53. Field machine according to claim 51, characterized in that a stationary-passive compensation by the alternative co-movement of the passive compensator in the longitudinal direction using the neutral zone (NZ - Fig. 46) or U-profile compensation with rotation of the preferred direction of the field lines of the passive compensator by α = 90 ° relative to the machine cycle to the direction of the field batteries (FB) (Fig. 47, 48).

54. field machine according to claim 51, characterized in that the compensation is realized by activating / deactivating current pulses on bistable magnets (switching cores).

55. Field force machine according to claim 51, characterized in that the compensation of the pole shoes (PS) is carried out in various cycles by self-compensation relative to the machine cycle (Fig. 49), possibly by compensation of the longitudinal force of the individual field battery (FB) on the individual Pole shoe (PS) through compensation magnets (KM - Fig. 50).

56. field machine according to claim 51, characterized in that the transverse work compensation either in the potential field by serial compensation parallel to the field lines (Fig. 51), or simultaneous compensation at α = 45 ° to the field lines (Fig. 52), or by simultaneous compensation on an equipotential surface perpendicular to the field lines (Fig. 53), or simultaneous compensation by mechanical coupling of two field modulators (FM) to be moved parallel to the field lines (Fig. 54), or simultaneous compensation by mechanical coupling two opposite to the vertical Field lines to be moved are field modulators (FM) (Fig. 55) as field modulator self-compensation.

57. field force machine according to claim 51, characterized in that the transverse compensation with field modulator movement of two symmetrical field modulators (FM - Fig. 56) each with a compensator magnet (KPM) parallel to the field lines or alternatively with a field modulator (FM) with coupled Polschuh (PS - Fig. 57), with the variants of the different compensator magnetic field modulator connections (KPM-FM - Fig. 58).

58. Field force machine according to claim 51, characterized in that a simultaneous compensation of the tangential work W _t by flat permanent magnets (PM) with offset pole pieces, which as half compensator magnets (KPM _! And KPM ₂ ) each guide the flow in half (Fig. 59 ), or as a sandwich permanent magnet system with halved and offset pole pieces (PS - Fig. 60), which concentrate the flow and lead to the exit area Ai at the nor pole and entry area A ₂ at the south pole.

59. Field force machine according to claim 51, characterized in that preferably in a rectangular field battery (FB) with magnetic preferential direction and highly asymmetrical, i.e. non-linear transverse force-displacement characteristic parallel to the field lines / preferred direction and transverse movement of the field modulator (FM) in the potential field in the direction parallel to the field lines, a toggle switch effect occurs, so that the system field batteries (FB) with field modulator (FM) as Power amplifier and does not act as a compensator.

60. Field machine according to claim 51, characterized _. characterized in that an anti-transverse force compensator, as an in-line compensator with differential and functional reinforcement / attenuation of the field force-determining variables, either by varying the field exit and entry tread surface of the river plates (FP) (/ (A) - Fig. 66.1 a, b), and / or by varying the amplitude permeability (f (ßa) - Fig. 66.2) in the flux plates (FP), and / or by varying the field strength amplitude when magnetizing the permanent magnet (PM) (/ (H _a ) - Fig. 63.3) with the consequence of a transverse flux density function, the function of the longitudinal force F | along the transverse direction and thus in the force field and its dependent transverse force component F _t (FB) determines to allow the compensation of the forces acting on the field modulator (FM) during its movement transverse force F _t (FM) for the manufacture of a balance, as self-compensation of the Systems field batteries (FB) with field modulator (FM), using the field modulator movement in parallel or perpendicular to the preferred field direction of the field batteries (FB), technically implement.

61. Field machine according to claim 60, characterized in that a U-shaped long cylindrical coil is used to generate an anisotropic magnetic field in the permanent magnet, which is shielded in the region of the U deflections, so that its winding in the z direction (cylinder axis = polar axis SN - Fig. 72.2) a homogeneous field, a magnetic preferred direction in the x-direction and a variable amplitude of amplitude in the y-direction, i.e. perpendicular to the magnetic preferred direction (/ (Ha) - Fig. 72.1) through variable winding and conductor cross-sections for the gradient Magnetization can be realized, whereby in addition, through the modification of the cylindrical shape in the SN direction (Fig. 72. 3 ae), a modification of the force-displacement characteristic curve with the convergence center of the field in front, through the arrangement aligned in the field during magnetization the grain orientation is achieved.

62. Field machine according to claim 1, characterized in that the recuperation, as kinetic recovery of the kinetic energy of the field modulator (FM), when braking or when supplying energy, in the FM circuit to compensate for the opening work W _A u _f with the closing work Wz _{u of} the field modulator (FM), is used as an additional component to optimize the balance in the total work W _to.

63. Field force machine according to claim 1, characterized in that the pole shoe or shoes to maximize the useful force in the force-displacement characteristic curve by mechanical reduction of the micro-air gap between the pole shoes π and the field batteries (FB) by an elastic suspension (Fig. 62 ) or by a wedge form fit (Fig. 63) or by a cone form fit (Fig. 64). Second independent claim: field machine, consisting of field semiconductor modulators

64. Field force machine consisting of high-purity substances with a field of relatively non-conductive ferro or ferri behavior (field insulators (I)), and in low concentration foreign substances (field doping atoms) with field conductive ferro or ferri behavior as a counterpart to the electrons (N) and / or defect electrons (P) conducting semiconductor crystals, characterized in that a field semiconductor modulator in the field force circuit of the field battery (s) (FB) of an FKG, by relatively non-conductive magnetic field or electrical field or thermal field - or gravitational field crystals and the controlled incorporation of field-effective, relatively field-conducting foreign atoms (doping atoms). This results in a bipolar (P and N) or unipolar (P or N) field semiconducting in this field semiconductor crystal, which by doping and external field and / or temperature influences, in accordance with a field band model, in a field quantum The conduction band can be defined and localized. This creates a field self-conduction of the field semiconductor crystal, which when integrated into a field force circuit, i.e. with applied field voltage, forms a field fault line. In this field-impurity line, the flux / field quanta are driven to the opposite pole in accordance with their polarity, with functional addition and influence. These P- or N-field semiconductor crystals can form a field-semiconductor component individually or by combination with other P- or N-field semiconductor crystals, analogously to the electronic semiconductor components. According to its functional mechanism and its structural design, the field semiconductor modulator component for controlling the flow of the field quanta of the field force circuit, either by rectifying etc. using field semiconductor diodes, or by switching, amplifying, triggering or modulating etc. (field current / Flux, voltage, power) by means of field conductivity modulation through a field junction (base) in a field bipolar transistor (BT), and / or by means of channel cross-sectional modulation through a gate with a field transverse to the flow channel in a field. Field effect transistor (FET). Field power components, such as field thyristor, field GTO thyristor, field thyristor diodes, field triac and field IGBT, form further complex combinations. According to the invention, all of the aforementioned field semiconductor modulators, which are located in the capacitor field of a field force circuit, are defined and can be produced as macro, micro or nano field force machines because of the applied field voltage of the field force circuit and the field forces generated thereby, relative to the introduced capacity.

65. Field machine according to claim 64, characterized in that in magnetic field semiconductor modulators crystalline isotropic or anisotropic substances with ferro- or ferrimagnetic and in electrical field semiconductors crystalline isotropic or anisotropic substances with ferro- or ferrielectric behavior, which are used in dimagnetics (M-field insulators) or magnets (M-field conductors) or dielectrics (E-Feid insulators) or electrics (E-field conductors) for technical handling are classified according to their conductivity in relation to temperature.

66. Field force machine according to claim 65, characterized in that with field semiconductor modulators in the magnetronic system, the magnetic particles, with negative magnetization (N) by a negative electron moment as a magneton μs ^~ , with positive magnetization (P) by a missing electron Spin moment as magneton hole μs * (defect magneton), are fixed in the atom and crystal lattice and the field quanta, with negative magnetization (N) by coupling / bonding between two spin moments as magnetron M ^" , with positive magnetization (P) by lack of coupling / bond gap act as a magnetron hole M ⁺ between two spin moments, as a necessary prerequisite for flux conduction through flux quanta (photons).

67. Field force machine according to claim 66, characterized in that in field semiconductor modulators, a magnetic macro particle as an atom magneton Aμβ ^" due to the sum of the number of magnetons and an atom-mageton hole Aμs * resulting from the mean time parallel to antiparallel spin moments the sum of the missing number of magnetons, which is parallel to antiparallel spin moments, is determined on average, and the associated atomic magnetrons AM ^" or atomic magnetron holes AM ^+, through exchange interaction with the neighboring atoms, provide the sufficient prerequisite for the flux conduction.

68. Field force machine according to claim 67, characterized in that in the case of field semiconductor modulators in a magnetic system, three types of magnetic reference levels for magnetron pair bonds are defined in such a way that the mean time parallel to antiparallel moments as absolutely magnetically negative or positive reference level of an atom is used, or the relative reference level of the magnetron pair bonds of the atomic / crystal lattice if Aμβ ^"of the doping atoms is negative or positive relative to the A _j- of the surrounding lattice atoms, so that in relation to the Aμs ^{~ of} the surrounding lattice atoms the kμ & of the doping atoms is smaller or larger than that of the lattice atoms, or the reference level of a dimagnetic with a magnetic zero level (magn. isolator with r = 1), analogous to the silicon in the electronic semiconductor crystal.

69. Field machine according to claim 67 and 68, characterized in that magnetic field ions are implemented as field particles with magnetron pair bonds in the magnetic crystal lattice and N _m - or P _m field semiconductors in field semiconductor modulators in that they act as follows : Nm conductor: If a relative or absolute dimagnetic with a complete pair of magnetrons is doped with an atom that is magnetically higher by 1 magnetron, for example, a magnetically positive ion l _m ⁺ and a magnetic N _m field semiconductor are formed by the fact that 1 AM ^" as a line magnetron A ^ B ^" and thereby leaves a positively magnetized ion. Pm conductor: If a relative or absolute dimagnetic is doped with an atom that is magnetically low by 1 magnetron, for example, a magnetron is missing for the complete pairing of magnetrons and a magnetically negative ion l _m ^" and a magnetic Pm field semiconductor are produced in that 1 AM ^" is missing as a line magnetron at Aμs ^~ ; this leaves a positive magnetic hole.

70. field force machine according to claim 67, 68, 69, characterized in that in field semiconductor modulators a strictly periodic AtonWIon arrangement in the isotropic or anisotropic space lattice forms a magnetic unit cell with n lattice points of the space lattice, in which the atom magnets are arranged in the lattice points are and therefore form the magnetron pair bond via certain, distance-dependent exchange interaction with the neighboring spins, n effective elementary magnets with m lattice atoms as unit cell magnetons and magnetrons, which are necessary for directional flux conduction and level of conductivity, and in particular during construction of nano-crystalline field Hafbleitbauelemente be arranged geometrically determined.

71. Field force machine according to claim 70, characterized in that in field semiconductor modulators a magnetic atom / ion layer forms a ferro / ferri unit cell (FEZ) which, with a number of S unit cell layers, the ferro / ferrimagnetism is temperature-dependent enables and thus as a magnetic negative macro atom / lon layer AL β ^~ with ALM ^" macro magnetons or magnetically positive macro atom / ion layer hole AL ^ B * with ALM * macro magnetron holes, forms the basis for the magnetic district structure (domains), which forms a Fetd semiconductor crystal as a macroscopically spontaneous polarization unit.

72. Feikraftmaschine according to claim 69, characterized in that in field semiconductor modulators a P _m N _m junction is produced as the boundary area between a P _m -conducting zone and an N _m -conducting zone in the same magnetic semiconductor crystal, which without (Fig. 146) or with (Fig. 147) external magnetic tension and in the case of external tension results in a blocking case (1-142) and passage case (2-142) for technical use.

73. Feldkraftmaschnie according to claim 64 and 65, characterized in that in field semiconductor modulators magnetic field semiconductor crystals made of dimagnetics by doping with magnetic foreign atoms or electric field semiconductors made of dielectrics can be produced by doping with foreign electrons, analogous to the production processes of electronic semiconductor components.

74. Field force machine according to claim 64 and 65 ff., Characterized in that in field semiconductor modulators, in an analog function mechanism and structure as electronic semiconductor components, as magnetronic field semiconductor components by a combination with differently doped field semiconductor crystals, in the variants magnetic diodes (M diodes - Fig. 150), magnetic bipolar (M-BT) and unipolar (M-FET) transistors (M transistors - Fig. 151, 152, 153, 154, 155, 156, 157, 158, 159, 160, 161, 162), and in applications of power magnetronics as a magnetic tyristor (M-thyristor - Fig. 163, 164 ac, 165), as M-GTO thyristor, M-thyristor diodes, M-diac, M-four and five-layer diode, magnetic triac (M-triac - Fig. 166 ac) and magnetic IGBT as a combination of an M-FET for controlling an M-BT (M-IGTB - Fig. 167, 168) with high efficiency and switching of high currents / Rivers that are made and used.

75. Field force machine according to claim 73, characterized in that in field semiconductor modulators the switching or amplification of magnetic currents / fluxes in the preferred direction is the maximum effect which is decisive for the functional mechanism (normal operating direction) and in inverse operation, that is to say operation against the preferred direction, the minimum effect entry.

76. Field force machine according to claim 73, characterized in that in field semiconductor modulators an M-bipolar transistor (M-BT) is a magnetic current / flow controlled field semiconductor component in which small changes in the magnetic base current / flow are large changes in the magnetic Emitter-collector current / flow cause, and that an M-field effect transistor (M-FET) is a unipolar magnetic voltage controlled field semiconductor device in which a magnetic field across the channel, the magnetic resistance of the source-drain path practically controls without power, and with an M-IGBT an M-FET (almost no power control) controls an M-BT (good transmission behavior), due to the low forward resistance, almost power-free, so that strong magnetic currents / fluxes can be controlled almost without power.

77. field force machine according to claim 64, 65, 66 and 76, characterized in that in field semiconductor modulators whose field current / flux field voltage characteristic or flux density field strength characteristic (Φm = l _m , B _m or Θ _m = U _m , H _m ), analogous to the output characteristic field for electronic semiconductor components, the stable switching states at the operating points Aι = "off" with very high resistance, A ₂ = start of saturation with M-BT or pinch-off limit with M-FET, and A3 = "on "with maximum Conductivity, on which work straight lines are defined for switching or amplification and thus the work points can be stabilized.

78. Field force machine according to claim 73, characterized in that in field semiconductor modulators all field semiconductor components with an analog function mechanism and structure also as electrical field semiconductor modulators, e.g. as E-BT, E-FET, E-IGBT, are produced and used, the surface charges of the crystals instead of the magn. Spin moments that cause spontaneous electrical polarization and thereby define the output characteristic field.

79. field machine according to claim 64, characterized in that a supra-semiconductor modulator as an electrically unipolar or bipolar system, with electron pairs (Cooper pairs) as bound conduction electron pairs (Nc) and / or electron-hole pairs as missing conduction electrons -Pairs (Pc) results from the fact that a superconducting non-conductor crystal is doped by superconducting foreign atoms with a higher or lower-order antiparallel electron pair in a low concentration, ie a Cooper pair has too much or too little, and the "bound" conduction electron pairs or hole pairs result from this. And that with this super-semiconductor crystal in the functional mechanism of normal-conducting semiconductor components, analog super-semiconductor diodes, super-semiconductor BT, -FET, -IGBT, etc. and superconducting circuits can be produced in a super-field force circuit.

80. field machine according to claim 73 and 79, characterized in that in field semiconductor modulators and super semiconductor modulators, any type of circuit can be produced by M-Feid semiconductor modulators or E-field semiconductor modulators or supra semiconductor modulators.

81. field force machine according to claim 73 to 80, characterized in that in field semiconductor modulators the construction of an M-BT / E-BT (Fig. 169), or an M-FET / E-FET (Fig. 170), or one M-IGBT / E-IGBT (Fig. 171), manufactured in macro, micro or nano structure, as a field modulator (FM) and / or pole shoe (PS), the field of field battery (s) (FB) in the field force generator (FKG) modulated.

Third independent claim: field machine made from field motor (FKE)

82. Field force machine consisting of excitation coils or excitation plates and inductors, as well as cores with electrically or magnetically conductive or semi-conductive substances with ferro / ferri behavior, characterized in that a field force motor (FKE), fed with external electrical primary energy, regulated dynamically in the field motor cycle and controlled with variable duration, repulsive or attractive, magnetic field impulses in magnesia, or electrical field force impulses in electres, generated by a two-magnesia / -lectreser principle or a one-magneses / -lectreser-inductor principle, according to the force-displacement characteristic of the generated fields, implemented in a p, V diagram, converted into mechanical work.

83. field machine according to claim 82, characterized in that the electric field motor (FKE) consists of a system with two magnesia, oriented in antiparallel or parallel force field coupling, and each magnesia consists of an optimized excitation coil and an optimized core and the system for Excitation by pulse magnetization is operated with pulse compression technology.

84. field force machine according to claim 82 and 83, characterized in that the excitation coil is larger in a first optimized magnetic effect, the greater the flow and the smaller the average coil length (average field line length), and thereby many short coils more magnetic effect result as a long, and in a second optimization a greater force effect is generated, the closer the magnetic field lines are, ie the greater the magnetic flux and the smaller the area through which it passes, and as a result many small coils with a small area produce a higher magnetic force than a coil with a large area.

85. Field force machine according to claim 82 and 83, characterized in that the optimized core has a higher magnetic gain, the higher the conductivity at the working point A ₃ (- (BH) _ma χ), while maximizing the flux density and minimizing the field strength , is in the flux density-field strength characteristic curve, ie that for the maximum effect of this Magnesian type only substances with the highest conductivity with the highest flux density and lowest field strength result in the highest gain factor.

86. Field machine according to claim 82, 83, 84 and 85, characterized in that the further optimization of the magnesium to generate the lowest energy consumption, by maximizing the ratio of force to weight of the excitation coil, core and yoke, with a core made of electrically insulated lamella sheets , preferably from grain-oriented and / or anisotropic material, or from a core with single / bicrystals and division into lamellae along the magn. Preferred axis, as well as the optimization of the geometry-related natural resonance of the core with minimization of magnetic reversal losses.

87. Field force machine according to claim 82, characterized in that the electric field motor (FKE) consists of a system with two solid-state magnets, oriented in antiparallel or parallel force field coupling, and each solid-state magnet from a strong magnetic cavity resonator with a magnetically active host crystal, of excellent magnetic quality and high thermal conductivity, as an amplifier core with doped magnetically active foreign atoms, and by pumps, i.e. by parametric excitation / amplification in the pump frequency with pulse compression technology, via a magnetic inversion inversion in Magnetic material, a strong induced or stimulated magnetically coherent emission is forced, in which the spins flap to an energetically lower state, so that the field force shock generated by the solid-state magnesium in the FKE generates the useful work.

88. Field machine according to claim 87, characterized in that the solid-state magnesium material in a magnetic resonator with two magnetic mirrors, the magn. Si mirror with 100% reflection and the decoupling mirror S ₂ with lower magn. Transmission, realized by magnetic refractive index modulation, is used so that a standing magnetic wave of magnetic flux quanta builds up in it, which moves in the longitudinal axis and repeatedly crosses the magnetically active material and is thereby coherently amplified, such waves being the path take it at an angle to the longitudinal axis, very quickly the magn. leave active material and not be further reinforced.

89. field force machine according to claim 88, characterized in that the resonator quality during the magn. Pumping process is artificially kept low, so that the solid-state magnet does not swing and a high magnetic occupation inversion is built up, and the quality of the Q switch (Q _m -switching), which is made up of cells in the resonator, is increased at a certain point in time, the stored magnetic excitation energy is discharged in a short, powerful magnetic giant pulse.

90. Field machine according to claim 88 and 89, characterized in that the magnetic energy is increased by amplification in which the magnetic field pulses during the amplification process are first artificially lengthened because of the extreme power density in the amplifier medium, so that after the amplification, the magnetic pulses be compressed again and then available with their extreme performance in the short-term solid-state magnesia and then decoupled.

91. Field machine according to claim 82 and 88, characterized in that, as an alternative to the magnetic cavity resonator, an efficient high-performance magnesium diode is used to generate the pumping process.

92. Field machine according to claim 91, characterized in that the magnesium diode is formed by a magnetic semiconductor which specifies the size of the magnetic band gap, the magnetic inversion by injection of magnetization carriers (Magnetons μ _B ^~ and magneton holes μ _B ⁺ ) is achieved in this magnetic semiconductor with a P _m N _m transition - the magneton holes are positively magnetized, unoccupied electron spin states and can be used in the forward operation of PmNm transitions with a magneton "Recombine" spin state with emission of a photon (magnetron).

93. Field force machine according to claim 82, characterized in that a field force motor (FKE) consists of a magnesia / solids magnet / diode magnet and the counter-piston consists of attractive ferro / ferrimagnetic material.

94. Field machine according to claim 82 ff., Characterized in that a field motor (FKE) from a magnesia / solids magnesia / diode magnet and the counter-piston from an inductor made of electrically highly conductive and light material, e.g. Aluminum, or a secondary coil, is made so that when the field is switched on and off, a very rapidly changing excitation field is created which generates a strong eddy current in the inductor, which is a repulsion (magnetic field) when the field is switched on in the TDC position of the crankshaft opposite to the excitation coil field) and an attraction when the field is switched off in the UT position (magnetic field is aligned with the excitation coil field).

95. Field force machine according to claim 82, characterized in that a field force motor (FKE) with an analog function mechanism as in a Magnesian system, is constructed from electrometer system components with excitation plates and cores made of ferro- / ferrielectric material.

96. Field force machine according to claim 82, 87, 91, 95, characterized in that a field force motor (FKE) with its primary or secondary field generating components is arranged so that two counter-rotating rotors, or without impulse compensation, a stationary stator and one for pulse compensation oscillating or moving rotor, as a field machine type in longitudinal or transverse machine construction is manufactured and operated.

97. field machine according to claim 82 and 95, characterized in that a field motor (FKE) as a working machine for work and power output with direct translative / rotary field force use or via a force-torque converter, preferably in longitudinal machines with an inventive crank drive integrated connecting rod variator (PLV), is built and operated.

Fourth independent claim: field machine and connecting rod length variator (PLV)

98. field machine consisting of a force-torque converter in the form of a crank loop with the elements crankshaft, connecting rod and Piston, characterized in that a connecting rod length variator (PLV) as a variable connecting rod, the height difference of the crankshaft lifting pin (HZ) of the crankshaft (KW) to the piston pin (KZ) from the TDC position at 0 ° KW to TDC position at 90 ° KW and from the UT position at 180 ° KW to UT at 270 ° KW so that the connecting rod (P) is lengthened or shortened by the height difference (ΔVHZ) or length difference (ΔP in these phases, so that the piston (K) rests in the TDC or UT position until the crankshaft lifting pin (HZ) has reached the 90 ° KW or 270 ° KW position, which means that the force at maximum lever arm in the positions from 90 ° KW or from 270 ° KW (ΔP1 control diagram explicit solution - Fig. 181, mechanical structure - Fig. 182, KW kinematics connecting rod length variation - Fig. 183, ΔP1 control diagram implicit solution - Fig. 184, PV for piston K1 - Fig 185, PV for pistons K2 - Fig. 186, ΔP1 control diagram with symmetrical K raft introduction + F and -F of K1 - Fig 187) is initiated.

99. Field machine according to claim 98, characterized in that a connecting rod length variator in the variants A. "Height function MKZ and ΔVHZ relative to the KW axis", B. "Height function ΔVHZ relative to the KW-HZ axis", or C. " Differential gear ", or D." Fixed cam disc ", which carries out height or length compensation.

100. field machine according to claim 98, characterized in that the connecting rod length variator (PLV) variant A (Fig. 188) with the principle "height function MKZ and ΔVHZ relative to the KW axis", with a second crank mechanism (PV) in the upper Piston pin (OKZ) is provided, and for height or length compensation a tappet (S) with cam rollers (NR) on a cam disc (NS), which is attached to the crankshaft (KW) and to control the middle piston pin (MKZ) is used in the PV. An explicit principle (Fig. 181) consists of an upper connecting rod (Pi) and a lower connecting rod (P ₂ ), whereby the PV is integrated into the connecting rod Pi via the OKZ. An implicit principle (Fig. 184) has one joint less than the explicit principle and as a result the system can be built much shorter, which accommodates a lower center of gravity.

101. field machine according to claim 98, characterized in that the connecting rod length variator (PLV) variant B (Fig. 189, 190, 191) with the principle "height function ΔVHZ relative to the KW axis", with a second crank mechanism (PV) is provided in the upper piston pin (OKZ), whereby a plunger (S) with cam roller (NR) in contact with the cam disc (NS) is rotatably connected by means of a sliding guide on the shaft of the connecting rod P ₂ for height and length compensation, the cam disc (NS) is attached to the crankshaft crank pin (HZ).

102. field machine according to claim 98, characterized in that the connecting rod length variator (PLV) variant C (Fig. 192, 193, 194) with the principle "differential gear", the height or length compensation as follows: the crankshaft lifting pin (HZ is offset via a cantilever arm in its angular position and a radius difference of a planetary gearwheel (Z _p ) with r = 1 / 2ΔP (r = 1/2 height difference between the actual and target bends of the crank pin HZ ₃ with the connecting rod pin currently stationary) ( PZ), ie a ratio of the wheel set of i = 4: 1), and is provided with a local, co-rotating PV crank drive or eccentric drive, the control of which with this planetary gear (Zp) - due to the reversal of direction of rotation - coupled with an outer wheel (Zg The axis of the PV is integrated in the new position of the crankshaft lifting pin (HZ ₂ ), so that the crankshaft lifting pin HZ _{3 of} the connecting rod moves on a compensating bend = target bend (radius with center in PZ as relative and currently fixed point of PZ) around HZ ₂ instead of on the actual arc of HZ1. The connecting rod pin (PZ) is locked in its position constantly during the crankshaft rotation from 0 ° KW to 90 ° KW via a switchable clamp S (stop), so that the piston does not change its TDC position during the crankshaft rotation; the same principle applies to the UT position from 180 ° KW to 270 ° KW. So that there is no movement of the connecting rod pin (PZ), the stroke must be clamped during this phase so that the crankshaft pin HZ3 also follows the desired curve.

103. Field force machine according to claim 98, characterized in that the connecting rod length variator (PLV) variant D (Fig. 195) with the principle "compensating cam fixed", the height and length compensation as a construction with a variator connecting rod for the piston ( K1) and for pistons (K2) with separate stroke divider 1 / 2H K1 and 1/2 H K2, as follows: The cam plate (KS) is a fixed cam plate with an outer and inner cam plate, in the guideway of which with a set curve a cam roller (KR) as a variable crank pin HZ ₁ - coupled via a swinging cantilever arm (A) connected to the crank pin HZ of the crankshaft - with the one with HZ _! coupled connecting rod (P) moves so that the connecting rod length variation, relative to the crankshaft position, results on the target curve. The sharp turning points that arise on the inner track are formed by applying material on the inner track with the thickness d to a radius of curvature that is equidistant from the outer track, so that there is less sharp rolling and wear. The radius of the cam roller (KR) results in the equidistant guideways with the corresponding acceleration function.

104. field machine according to claim 98, characterized in that the connecting rod length variator (PLV) in its various variants as a new kinematic converter principle for efficient (higher Torque and power due to the larger lever arm) Conversion from linear to rotary motion can be used in crank loops for internal combustion engines, compressors, pumps and other force-torque converters

Fifth independent claim:

Magneto-electric field force system

105. Field force machine consisting of an electric generator, charge regulator, backup battery, couplings, heat exchangers, shielding consumers, etc., characterized in that a magneto-electric field force system through the combination of the FKM syb systems field force generator (FKG), also as a FKG solid state Version, field semiconductor modulators, field force motor (FKE), and / or in the case of translation-rotation conversion, a connecting rod length variator system, a coordinated functional relationship result in such a way that a completely new autonomous drive system / unit and / or energy source and / or Energy pump (in the left-hand cycle process) is created (Fig. 197).

106. Field machine according to claim 105, characterized in that the field force generator and / or the field motor (FKE) in the machine type of a longitudinal machine, preferably designed as a reciprocating, free piston, orbital piston, transverse reciprocating machine, or as a transverse -Machine with constant working air gap between the field batteries (FB), preferably designed as a rotary piston, rotating field or traveling field machine, and as a FKG solid-state field force generator without moving components (except field modulator) is manufactured.

107. Field machine according to claims 105 and 106, characterized in that the production of the field machine takes place in parts and in total in the scaling macro, micro and nano technology.

108. Field machine according to claim 105, 106 and 107, characterized in that the use and application or use is unlimited, i.e. on earth, in water, in the air and in space. And that the field machine without restriction of the use in mobile systems, e.g. for driving cars, trains, ships, motorcycles, airplanes, robots, etc. and in stationary systems, e.g. in the house for the generation of heat, cold, conveying water, etc., as well as in industry for driving machines and / or for generating electrical energy.