EP1671336A2

EP1671336A2 - Spherical or grain-shaped semiconductor element for use in solar cells and method for producing the same; method for producing a solar cell comprising said semiconductor element and solar cell

Info

Publication number: EP1671336A2
Application number: EP04765485A
Authority: EP
Inventors: Jaques Scheuten; Volker Geyer; Patrick Kaas
Original assignee: Scheuten Glasgroep BV
Current assignee: Scheuten Glasgroep BV
Priority date: 2003-10-02
Filing date: 2004-09-22
Publication date: 2006-06-21
Also published as: CA2540723A1; EP1521308A1; JP2007507867A; WO2005034149A3; US20070089782A1; EP2341550A1; KR101168260B1; CN1860617A; CN100517764C; KR20120034826A; KR20060115994A; WO2005034149A2; JP2011216923A; CA2540723C

Abstract

The invention relates to a spherical or grain-shaped semiconductor element for use in solar cells and to a method for producing said semiconductor element. The invention also relates to a solar cell comprising an integrated spherical semiconductor element, to a method for producing said solar cell and to a photovoltaic module comprising at least one solar cell. The semiconductor element is characterized in that a back contact layer and a I-III-VI compound semiconductor are deposited on a spherical or grain-shaped substrate core. The I-III-VI compound semiconductor is produced by applying precursor layers and subsequent selenization or sulfurization. For producing a solar cell, a plurality of the inventive semiconductor elements is introduced into a substrate layer from which they project on at least one face thereof. The substrate layer is stripped on one side, thereby exposing the back contact layer of most of the semiconductor elements. This back contact layer can be contacted to the back contact of the solar cell while a front contact is provided on the side of the semiconductor elements that was not stripped.

Description

Spherical or grain-shaped semiconductor component for use in solar cells and method of manufacture; Method for producing a solar cell with a semiconductor component and a solar cell

Description :

The invention relates to a spherical or granular semiconductor component for use in solar cells and a method for producing this semiconductor component.

The invention further relates to a solar cell with integrated spherical or conformal semiconductor components and a method for producing this solar cell.

The invention further relates to a photovoltaic module with at least one solar cell with integrated semiconductor components.

In photovoltaic cells, solar radiation energy is converted into electrical energy by using the photovoltaic effect. Solar cells used for this purpose are mainly made from planar wafers in which a conventional p / n transition is realized. In addition to the application and processing of individual continuous layer surfaces, the application of semiconductor material in spherical or granular form has proven to be expedient for producing a p / n junction and further functional layers, since this has various advantages.

BESTATIGUNGSKOPIE For example, for the manufacture of electronic devices, it has long been known to introduce electronically active material as particles into a layer in order to increase the activity of the material. This is described, for example, in US Pat. No. 3,736,476. In an exemplary embodiment disclosed therein, a core and a layer surrounding the core are formed in such a way that a p / n transition results. Several of the particles produced in this way are introduced into an insulating carrier layer such that they protrude from the surface on both sides of the layer and can be contacted by further layers.

Furthermore, German Offenlegungsschrift DE 100 52 914 AI describes a semiconductor device which is formed from a layer structure which consists of an electrically conductive carrier layer, an insulating layer, semiconductor particles and an electrically conductive cover layer, the semiconductor particles being introduced into the insulating layer and they both touch the underlying carrier layer and the top layer above. The semiconductor particles can consist, for example, of silicon or I-III-VI semiconductor particles which are coated with II-VI compounds.

The background to the use of I-III-VI compound semiconductors such as copper indium diselenide, copper indium sulfide, copper indium gallium sulfide and copper indium gallium diesel selenide is represented, for example, by US Pat. Nos. 4,335,266 (Mickelsen et al) and 4,581,108 (Kapur), in which this semiconductor type and

Methods of manufacturing are clearly described. I-III-VI compound semiconductors are also referred to below as chalcopyrites or CIS or CIGS semiconductors. It is also known to form independent spherical semiconductor components which represent complete semiconductors including the required electrodes. For example, it is from the European

Patent application EP 0 940 860 AI known to form a spherical core by masking, etching steps and the application of different material layers to form a spherical semiconductor component. Semiconductor components of this type can be used as solar cells if the p / n junction is selected such that it can convert incident light into energy. If the p / n junction is designed so that it can convert an applied voltage into light, the semiconductor component can be used as a light-emitting element.

Due to the diverse intended areas of application of such semiconductor components, the elements must represent completely independent components with electrode connections, which can be installed in other applications. This requires a high level of complexity of the semiconductor components and the required manufacturing processes. Due to the small dimensions of the spherical shapes used of a few millimeters, the manufacture of the spherical components with all

Functional layers and processing steps are very complex.

The object of the invention is to provide a semiconductor device with high activity, which is flexible

Suitable for use in various solar cells. Another object of the invention is to provide an efficient method for producing a semiconductor component for use in solar cells.

Another object of the invention is to provide a method for introducing a semiconductor component into a solar cell.

Furthermore, it is an object of the invention to provide a solar cell with integrated semiconductor components and a photovoltaic module with at least one solar cell.

According to the invention, this object is achieved by the features of the main claims 1, 21, 37 and 45. Advantageous developments of the invention can be found in the subclaims.

According to the invention, the object is achieved by a spherical or conformal semiconductor component for use in a solar cell. The method for producing such a semiconductor component is by applying a conductive back-contact layer to a spherical or conformal substrate core, applying a first precursor layer made of copper or copper gallium, applying a second precursor layer made of indium and reacting the precursor layers with sulfur and / or selenium marked to an I-III-VI compound semiconductor.

The precursor layers are reacted in the presence of selenium and / or sulfur and are referred to as selenization or sulfurization. These processes can be carried out in various ways with parameters that are matched to the respective process. To this For example, parameters include temperature, time, atmosphere and pressure. The selenization or sulfurization can take place, for example, in steam, melts or salt melts of the respective reaction element or salt melts with admixtures of sulfur and / or selenium. The

Elements of sulfur and selenium can be used both simultaneously and in succession for the reaction. In a particularly preferred embodiment of the invention, the reaction takes place in hydrogen compounds of selenium or sulfur.

In order to obtain an I-III-VI compound semiconductor layer with defined properties, certain parameters of the precursor layers must be set. In addition to the composition, this also includes the thicknesses of the individual layers.

Due to the spherical shape and the diameter that varies with it, different layer thickness ratios may have to be selected than in known methods for the formation of planar I-III-VI compound semiconductors.

In a particularly preferred exemplary embodiment of the invention, the substrate core to be coated consists of glass, in particular of soda-lime glass, since this represents a good source of sodium for the layer structure. The main component of the conductive back contact layer is preferably molybdenum. In a particularly preferred exemplary embodiment of the invention, the back contact layer contains up to 20% by weight gallium to improve the adhesion. The individual layers can each be applied by PVD processes such as sputtering or vapor deposition or CVD processes. The precursor layers can be alloyed at temperatures of typically> 220 ° C. before being converted into an I-III-VI compound semiconductor. After the precursor layer system has been converted into an I-III-VI compound semiconductor, further processing steps or coatings can be carried out. This includes, for example, treatment with a KCN solution (for example 10% KCN solution in an alkaline 0.5% KOH solution) to remove disruptive surface layers such as copper-sulfur compounds. A buffer layer, a high-resistance and a low-resistance ZnO layer can also be deposited.

The spherical or granular semiconductor component according to the invention for use in solar cells thus has a spherical or conformal substrate core which is coated at least with a back contact layer and an I-III-VI compound semiconductor. The substrate core is preferably made of glass, metal or ceramic and the diameter of the substrate core is of the order of magnitude

0.05-1mm. A diameter of 0.2 mm has proven particularly expedient. The thickness of the back contact layer is of the order of 0.1-lμm. The I-III-VI compound semiconductor layer consists, for example, of copper indium diselenide, copper indium sulfide,

Copper indium gallium sulfide or copper indium gallium diselenide. The thickness of this layer is on the order of 1-

3 .mu.m.

Spherical or granular semiconductor components produced using the described method steps represent elements for further use in the production of solar cells. The advantages of such semiconductor components for use in solar cells, for example, lies in the fact that an I-III-VI compound semiconductor can be produced which is suitable for incorporation into different solar cells. Among other things, this includes different dimensions of solar cells. Flat solar cells with I-III-VI compound semiconductors are conventionally produced in reactors which, in order to adhere to certain parameters, have to be adapted precisely to the size of the desired solar cells. Large-area solar cell structures therefore also require correspondingly large reactors, in which large total masses have to be heated and cooled again, for example when they are converted under the influence of heat. This leads to a high energy requirement. The production of spherical or conformal semiconductor components for later processing in solar cells, on the other hand, requires far less energy, since comparatively small volumes have to be implemented in the corresponding reactors.

Another advantage is the higher flexibility in the production. For example, with conventional

If larger or smaller structures are implemented in solar cells in a reactor, a corresponding new reactor must be provided in order to be able to set the required parameters precisely. This is very expensive. The manufacture of such conventional

Thin-film modules are therefore limited by the equipment used to manufacture the semiconductor layer. In contrast, in the manufacture of the spherical semiconductor components according to the invention, an existing reactor can be supplemented by additional ones by the necessary amount of

To produce components. The later production of solar cells, for which no reactor is required, but only systems for the application of further layers is therefore considerably simplified.

Due to the spherical shape, useful layer systems can also be realized, which under certain circumstances cannot be achieved with flat semiconductor structures. For example, the required thickness of the deposited layers is less. This makes it possible, for example, to use a back contact layer made of molybdenum-gallium layer without the resistance of the layer becoming too high, as is the case with flat structures.

With the method according to the invention for producing a solar cell with integrated spherical or conformal semiconductor components, semiconductor components are further processed in a solar cell. The method provides for the introduction of spherical semiconductor components into an insulating carrier layer, the semiconductor components protruding from the surface of the carrier layer on at least one side of the carrier layer, and the spherical or conformal semiconductor components each consisting of a substrate core which has at least one conductive back contact layer and an I-III-VI compound semiconductor layer is coated. Parts of the semiconductor components are removed on one side of the carrier layer, so that a surface of the back contact layer of several components is preferably exposed. A back contact layer can then be applied to this side of the carrier layer, which is in contact with the free back contact surfaces of the semiconductor components. A front contact layer is applied to the other side of the carrier layer. In addition to the Additional functional layers can be deposited on the front contact layer and the back contact layer.

In a particularly preferred exemplary embodiment of the invention, the semiconductor components are applied to the carrier layer by scattering, dusting and / or printing and then pressed into the carrier layer so that they are embedded to a certain degree in the carrier layer. If the carrier layer is a thermoplastic film that is placed on a soft substrate, the semiconductor components can be pressed, for example, so deeply into the layer that they penetrate into the soft substrate and thus protrude on both sides of the carrier layer.

The carrier layer can also be designed as a matrix with cutouts into which the semiconductor components are introduced and, if appropriate, fastened. This can be done for example by a heating and / or pressing process.

When removing parts of the semiconductor components, a part of the carrier layer can also be removed. The removal can take place, for example, by grinding, polishing, etching, thermal energy input or photolithographic processes, while the back contact layer and the front contact layer can each be deposited by PVD or CVD processes. If, for example, conductive polymers are used as the back contact or front contact layer, methods such as brushing or

Spraying proved to be advantageous. The solar cell according to the invention with integrated spherical or conformal semiconductor components thus has an insulating carrier layer into which the semiconductor components are introduced, the semiconductor components at least on one side of the

Protrude from the layer. It also has a front contact layer on one side and a back contact layer on the other side. On the side of the back contact layer, several semiconductor components have a surface that is free from I-III-VI compound semiconductors and thus the back contact layer of the

Releases semiconductor device. These areas are in direct contact with the back contact layer of the solar cell.

In a particularly preferred embodiment of the

Invention, the carrier layer consists of an insulating material such as a polymer. The spherical semiconductor components were preferably produced by the method according to the invention, and the front contact layer consists, for example, of a TCO (Transparent Conductive Oxide). The back contact layer consists of a conductive material such as a metal, a TCO or a polymer with conductive particles. In addition to the front contact layer and the back contact layer, the solar cell can have further functional layers.

Once all the process steps have been completed, a solar cell with integrated semiconductor components is produced, which has various advantages, in particular compared to planar semiconductor structures. The main advantage in addition to the simplified manufacture lies in the curved surfaces of the semiconductor components, onto which incident light is independent of the direction of incidence can hit. This means that diffuse light can also be better used to generate electricity.

Further advantages, special features and expedient developments of the invention result from the

Subclaims and the following illustration of preferred exemplary embodiments based on the figures.

From the pictures shows

1 shows a particularly preferred exemplary embodiment of a layer structure for producing a spherical semiconductor component in FIG. (A) and a semiconductor component produced using the method according to the invention in FIG. and

2 in Figures (a) - (d) the method steps according to the invention when introducing a spherical semiconductor component into a solar cell.

1 shows a particularly preferred exemplary embodiment of a layer structure 10 for producing a spherical or conformal semiconductor component 11 in FIG. (A). The layer structure 10 is also as

Precursor layer structure for later conversion to an I-III-VI compound semiconductor. In the first step of the method according to the invention for producing a spherical semiconductor component 11, a spherical substrate core 20 is coated with a back contact 30. The spherical substrate is preferably made of glass, but it can also be other materials such as metals or ceramics. For example, when using glass Lime-soda glass can be used, which is a good source of sodium for later layer build-up. Other glass compositions can also be used.

The substrate is essentially spherical, but the shape can also differ from the pure spherical shape. Depending on the manufacturing process, the resulting spheres can also be described as granular. Hollow bodies made of the materials mentioned can also be used. The diameter of the balls is of the order of 0.05-1 mm, a diameter of approximately 0.2 mm preferably being selected.

The back contact 30 is applied to the spherical substrate in such a way that the entire surface of the sphere is coated. The material for the back contact is preferably molybdenum, but other suitable conductive materials such as tungsten or vanadium can also be used.

The substrate core 20 can be coated by PVD methods such as sputtering or vapor deposition. CVD methods can also be used, it being possible to determine that sputtering a large number of small substrate balls is a very time-consuming process, which is less suitable than other methods in terms of the possible throughput. The thickness of the back contact layer is of the order of 0.1-lμm.

In order to improve the adhesion of subsequent layers to the back contact layer, a gallium layer can be applied to the molybdenum layer. In a particularly preferred embodiment of the invention the gallium is introduced into the molybdenum layer to increase the adhesion. This can include a gallium content of up to 20% by weight. This solution is conventionally avoided in practice in the case of flat solar cells, since it disadvantageously increases the resistance of the back contact. In the

However, a gallium-molybdenum layer has proven to be advantageous for the production of the semiconductor components according to the invention, since thinner layers can be realized than with flat semiconductors, the increased resistance of which does not entail any serious disadvantages.

According to the invention, an I-III-VI compound semiconductor is selected as the semiconductor compound. These semiconductors, also known as chalcopyrites, include, for example, copper indium diselenide, copper indium sulfide,

Copper indium gallium sulfide and copper indium gallium dieselenide.

To produce such a CuGa / InS / Se ₂ layer on the substrate, precursor layers made of copper, gallium and / or indium are first applied, which are converted into the desired semiconductor in a subsequent selenization or sulfurization process. The precursor layers can be applied using the same methods as the back contact, so that here too PVD methods such as sputtering and evaporation or CVD methods are used

Application can come. In a particularly preferred exemplary embodiment of the invention, the spherical substrate is coated with copper as the first precursor layer 40. In order to improve the adhesion between this first layer and the back contact, a thin copper

Gallium layer can be applied as an adhesion promoter. In a first exemplary embodiment of the invention, a second precursor layer 50 in the form of indium is deposited on the copper layer. An alternating application of Cu / In layer packs (eg Cu / In / Cu / In) is also possible. The CU / In layers are then sulfurized to CuInS with sulfur and a so-called CIS layer is formed. The CIS layer 60 resulting from the precursors and the sulfurization process is shown on the semiconductor component 11 in the illustration (b). The precursor layer system made of copper and indium can optionally be alloyed before the sulfurization at an elevated temperature of typically T> 220 °, which is advantageous for the adhesion and subsequent reaction with selenium and / or sulfur. However, this step is not mandatory.

The layer thicknesses of the Cu and In layers are determined by the desired layer thickness of the CIS semiconductor. The layer thickness of the CIS layer 60 is preferably of the order of magnitude of 1-3 μm. It has proven to be expedient for this that the atomic ratio Cu / In is of the order of 1-2. Atomic ratios of copper to indium between 1.2-1.8 are particularly preferred.

In a second exemplary embodiment of the invention, a copper or a copper-gallium layer is applied to the back contact layer 30 as the first precursor layer 40. This first precursor layer is in turn followed by a second precursor 50 in the form of an indium layer, the two layers then being selected to CuIn / GaSe ₂ and forming a CIGS layer. The copper indium / gallium layer system can also optionally be alloyed at an elevated temperature of typically T> 220 °. In this exemplary embodiment, the layer thicknesses are also dependent on the desired Cu / (In + Ga) atomic ratio after the selenization. It has proven expedient that this ratio is <1. The layer thickness of the CIGS layer after the selenization is preferably in the order of magnitude of 1-3 μm. It has been found that the copper content of the finished CIGS layer can be set lower than the stoichiometrically necessary level.

The spheres coated with the precursors can be converted by selenization with selenium and / or sulfurization with sulfur. Different methods can be used. In a particularly preferred embodiment of the invention, the balls are vacuum or under atmospheric pressure with a vapor of the respective

Elementes (Se and / or S) implemented. This implementation takes place with certain parameters such as temperature, time, process duration, pressure and partial pressure. The reaction can also take place in a melt of the elements. Another possibility for implementation is the molten salt, which contains S and / or Se.

In a further exemplary embodiment of the invention, the spheres are converted into hydrogen compounds of sulfur and / or selenium. This can take place, for example, under atmospheric pressure or at a pressure below atmospheric pressure. Both sulfur and selenium can be used in succession or simultaneously in the reaction.

In a particularly preferred exemplary embodiment of the invention, the next process step after the spheres have been implemented are disadvantageously acting surface layers away. For example, these can be CuS compounds that have arisen during the implementation process. One way to remove such layers is to treat them with KCN solution. If sulfurization has been carried out, this treatment step is necessary, whereas after selenization it can be considered optional.

In a preferred embodiment, a buffer layer is deposited on the CIS or CIGS semiconductor in the next step. For example, CdS, ZnS, ZnSe, ZnO or CdZnS can be used as layer materials. Other possible materials can be seen in In-Se compounds or In-S compounds. These buffer layers can be deposited by coating methods such as CVD, PVD, wet chemical (chemical bath deposition) or other suitable methods. Chemical bath deposition has proven to be particularly advantageous. The thickness of the buffer layer is preferably of the order of 10 to 200 nm.

In a further particularly preferred exemplary embodiment of the invention, high-resistance ZnO (i-ZnO) is deposited on the layer structure in the next step. Methods such as PVD (reactive or ceramic), CVD or chemical bath deposition can be used to deposit this layer. The thickness of the layer is preferably of the order of 10-100 nm.

After the deposition of high-resistance ZnO (approx. 50 nm), a further layer of low-resistance ZnO (ZnO: Al) is deposited in a particularly preferred exemplary embodiment of the invention. The same deposition methods can be used here as used for high-resistance ZnO. The thickness of this layer (TCO) is of the order of 0.1-2 μm.

Spherical semiconductor components produced using the method steps described represent elements for further use in the production of solar cells. The semiconductor components according to the invention can be further processed in solar cells in various ways. For example, in a further aspect of the invention, the spherical semiconductor components are embedded in a solar cell, as shown in FIGS. (A) - (d) in FIG. 2.

2 (a) of FIG. 2 shows the introduction of the semiconductor components 11 into an insulating carrier layer 70. It has proven to be advantageous to use a flexible film as the carrier layer. The carrier layer preferably consists of a thermoplastic polymer, which can be, for example, a polymer from the group of the polycarbonates or polyester. Prepolymerized resins from the group of epoxies, polyurethanes, polyacrylics and / or polyimides can also be used. Furthermore, a liquid polymer can be used, into which the balls are pressed and which then hardens.

The semiconductor components 11 are preferably introduced into the carrier layer 70 such that they protrude from the surface of the layer on at least one side of the carrier layer. The particles can do this, for example

Scattering, dusting and / or printing are applied and then pressed in. To press the bodies into the carrier layer, the latter can be heated, for example. In a further exemplary embodiment of the invention, the particles are introduced into a prefabricated matrix of a carrier layer, in which there are recesses into which the particles are inserted. A heating and / or pressing process can be carried out to fasten the bodies to the carrier layer.

If the semiconductor components are to protrude on both sides of the carrier layer, the carrier layer can stick to the

Introducing the components, for example, on a flexible base so that the semiconductor components can be pressed into the carrier layer to such an extent that parts of them emerge on the underside of the carrier layer.

In a particularly preferred exemplary embodiment of the invention, parts of the semiconductor components are removed on one side of the carrier layer as the next step. Parts of the carrier layer can also be removed. This is shown in Figure (b) of Fig. 2 by an arrow. The carrier layer 70 is preferably removed up to a layer thickness in which parts of the introduced bodies are also removed. In the exemplary embodiment shown, removal occurs except for the back contact layer 30 of the dotted line

Semiconductor component 11. If the semiconductor components have been introduced into the carrier layer such that they protrude on both sides of the layer, it is also possible to process the semiconductor components on one side without additional removal of the carrier layer, so that the

After the removal, semiconductor components either protrude further from the carrier layer or close off with it. The removal of the semiconductor body or the carrier layer can also take place at other times which are before the application of a later back contact 80 on this side. The semiconductor components and / or the carrier layer can be removed by mechanical methods such as grinding or

Polishing, etching, thermal energy input, for example by laser or radiation or photolithographic processes.

In a further process step, a managerial

Back contact layer 80 applied to the side with the removed semiconductor components. For example, substances from various polymer classes can be used as the conductive material for this back contact. Epoxy resins, polyurethanes and / or polyimides which are provided with suitable conductive particles such as carbon, indium, nickel, molybdenum, iron, nickel chromium, silver, aluminum and / or corresponding alloys or oxides are particularly suitable. Another possibility is represented by intrinsic conductive polymers. These include, for example, polymers from the PANis group. Materials such as TCOs or suitable metals can also be used. The back contact can be applied to TCOs and metals with PVD or CVD processes.

In a further method step, a conductive front contact layer 90 is applied to the side of the carrier layer, on which no semiconductor components have been removed. This can also be done using methods such as PVD or CVD. For example, various TCOs (Transparent Conductive Oxides) can be used as the conductive material of the front contact. Additional functional layers can be deposited before or after the deposition of a front and a rear contact. The choice of the additional functional layers depends in particular on the semiconductor components used. Functional layers such as

Buffer layers that have already been deposited on the semiconductor bodies may no longer have to be deposited in order to produce the solar cell with integrated semiconductor components. After all the necessary deposition and processing steps, a solar cell has been created from which a photovoltaic module can be produced. One or more of the solar cells can, for example, be connected in series and combined to form a module from which the generated electricity is tapped.

Reference symbol list:

10 layer structure, precursor layer structure 11 semiconductor component

20 substrate, substrate core

30 back contact layer of a semiconductor component

40 First precursor layer 50 Second precursor layer 60 I-III-VI compound semiconductor, CIS or CIGS layer

70 carrier layer, insulating

80 back contact layer of a solar cell

90 front contact layer of a solar cell

Claims

Claims:

1. A method for producing a spherical or conformal semiconductor component (11) for use in a solar cell, characterized by the following steps: applying a conductive back contact layer (30) to a spherical or conformal substrate core (20); Applying a first precursor layer (40) made of copper or copper gallium; Applying a second precursor layer (50) made of indium; - Implementation of the precursor layers (40) and (50) with sulfur and / or selenium to form an I-III-VI compound semiconductor.

2. The method according to claim 1, characterized in that the main component of the conductive back contact layer (30) is molybdenum.

A method according to claim 2, characterized in that the conductive back contact layer (30) contains up to 20% by weight gallium to improve adhesion.

Method according to one or more of the preceding claims, characterized in that the layers (30, -40, -50) are each applied by PVD and / or CVD methods.

Method according to one or more of the preceding claims, characterized in that a layer structure (10) made of precursor layers (40, -50) in front the implementation of an I-III-VI compound semiconductor is alloyed.

6. The method according to claim 5, characterized in that a layer structure (10) made of precursor layers (40; 50) is alloyed before the reaction to form an I-III-VI compound semiconductor at a temperature T> 220 ° C.

7. The method according to one or more of the preceding claims, characterized in that the implementation of the layer structure (10) from precursor layers (40; 50) to an I-III-VI compound semiconductor in steam of the reaction element sulfur and / or selenium takes place.

8. The method according to claim 7, characterized in that the implementation of the layer structure (10) takes place under atmospheric pressure.

9. The method according to claim 7, characterized in that the implementation of the layer structure (10) is carried out under vacuum.

10. The method according to one or more of the preceding claims, characterized in that the implementation of the layer structure (10) from precursor layers (40; 50) to an I-III-VI compound semiconductor takes place in a melt of the reaction element sulfur and / or selenium.

11. The method according to one or more of the preceding claims, characterized in that the Implementation of the layer structure (10) from precursor layers (40, -50) to form an I-III-VI compound semiconductor in a salt melt with admixtures of the conversion element sulfur and / or selenium.

12. The method according to one or more of the preceding claims, characterized in that the implementation of the layer structure (10) from precursor layers (40, -50) to an I-III-VI compound semiconductor in hydrogen compounds of the reaction element sulfur and / or selenium takes place.

13. The method according to claim 12, characterized in that the implementation of the layer structure (10) takes place under atmospheric pressure.

14. The method according to claim 12, characterized in that the implementation of the layer structure (10) takes place under a pressure less than atmospheric pressure.

15. The method according to one or more of the preceding claims, characterized in that after the implementation of the layer system (10) to a I-III-VI compound semiconductor, a treatment with KCN solution is carried out.

16. The method according to one or more of the preceding claims, characterized in that after the implementation of the layer system (10) to form an I-III-VI compound semiconductor, a buffer layer is deposited.

17. The method according to one or more of the preceding claims, characterized in that after the implementation of the layer system (10) to an I-III-VI compound semiconductor, a high-resistance ZnO layer is deposited.

18. The method according to claim 17, characterized in that a low-resistance ZnO layer is deposited after the high-resistance ZnO layer.

19. The method according to one or more of the preceding claims 16 to 18, characterized in that the layer (here I mean buffer layer and / or the high-resistance and the low-resistance layer) is deposited by PVD or CVD processes.

20. The method according to claim 19, characterized in that the layer is deposited by chemical bath deposition.

21. Spherical or granular semiconductor component for use in solar cells, characterized in that the semiconductor component (11) has a spherical or conformal substrate core (20) which is coated with at least one back contact layer (30) and an I-III-VI compound semiconductor is.

22. Semiconductor component according to Claim 21, characterized in that the substrate core (20) consists of glass, metal or ceramic.

23. The semiconductor component according to claim 22, characterized in that the substrate core (20) consists of soda-lime glass.

24. The semiconductor component according to one or more of claims 21 to 23, characterized in that the diameter of the substrate core (20) is of the order of 0.1-1 mm, in particular approximately 0.2 mm.

25. The semiconductor component according to one or more of claims 21 to 24, characterized in that the thickness of the back contact layer (30) is of the order of 0.1-lμm.

26. Semiconductor component according to one or more of claims 21 to 25, characterized in that the main component of the back contact layer (30) is molybdenum.

27. The semiconductor component according to one or more of claims 21 to 26, characterized in that the back contact layer (30) contains up to 20% by weight of gallium to improve the adhesion.

28. Semiconductor component according to one or more of claims 21 to 27, characterized in that the I-III-VI compound semiconductor layer (60) consists of a compound from the group of copper indium sulfides, copper indium diselenides, copper indium gallium sulfides or copper indium gallium diselenides.

29. Semiconductor component according to one or more of claims 21 to 28, characterized in that the thickness of the I-III-VI compound semiconductor layer (60) is in the order of magnitude of 1-3 μm.

30. The semiconductor component according to one or more of claims 21 to 29, characterized in that the semiconductor component (11) has a buffer layer above the I-III-VI compound semiconductor layer (60).

31. The semiconductor component according to claim 30, characterized in that the buffer layer consists of a material from the group CdS, ZnS, ZnSe, ZnO, indium selenium compounds or indium sulfur compounds.

32. Semiconductor component according to one or both of claims 30 and 31, characterized in that the thickness of the buffer layer is in the order of 20-200 nm.

33. Semiconductor component according to one or more of claims 21 to 32, characterized in that the semiconductor component above the I-III-VI compound semiconductor layer (60) has a high-resistance and a low-resistance ZnO layer.

34. Semiconductor component according to claim 33, characterized in that the thickness of the high-resistance layer is of the order of 10-100 nm.

35. Semiconductor component according to one or both of claims 33 and 34, characterized in that the thickness of the low-resistance ZnO layer is in the order of 0.1-2μm.

36. Semiconductor component according to one or more of claims 21 to 35, characterized in that the semiconductor component (11) was produced by a method according to one or more of claims 1 to 20.

37. A method for producing a solar cell with integrated spherical or conformal semiconductor components, characterized by the following features: - Introduction of several spherical or conformal semiconductor components (11) into an insulating carrier layer (70), the semiconductor components (11) at least on one side the carrier layer protrude from the surface of the carrier layer, and the semiconductor components (11) each consist of a spherical or conformal substrate core (20) which is coated with at least one conductive back contact layer (30) and an I-III-VI compound semiconductor layer (60) is; - Removing parts of the semiconductor components (11) on one side of the carrier layer (10), so that a surface of the conductive back contact layer (30) of the semiconductor components (11) is exposed; - Applying a back contact layer (80) to the side of the carrier layer (10) on which parts of the semiconductor components (11) are removed; and - Applying a front contact layer (90) to the side of the carrier layer (10) on which no semiconductor components (11) are removed.

38. The method according to claim 37, characterized in that, in addition to parts of the semiconductor components (11), a part of the carrier layer (10) is removed.

39. The method according to one or both of claims 37 and 38, characterized in that in addition to the front contact layer (40) and the back contact layer (50) further functional layers are deposited.

40. The method according to one or more of claims 37 to 39, characterized in that the semiconductor components (11) are applied by scattering, dusting and / or printing to the carrier layer (70) and then introduced into the carrier layer.

41. The method according to one or more of claims 37 to 40, characterized in that the carrier layer (70) is a matrix with recesses into which the semiconductor components (11) are introduced.

42. The method according to one or more of claims 37 to 41, characterized in that the semiconductor components (11) are introduced into the carrier layer (70) by a heating and / or pressing process.

43. The method according to one or more of claims 37 to 42, characterized in that the removal of the semiconductor components (11) and / or the carrier layer (70) is carried out by grinding, polishing, etching, thermal energy input and / or photolithographic processes.

44. The method according to one or more of claims 37 to 43, characterized in that the back contact layer (80) and / or the front contact layer (90) is deposited by PVD or CVD methods or other methods adapted to the material of the respective layer become.

45. Solar cell with integrated spherical or conformal semiconductor components, characterized in that the solar cell has at least the following features: - an insulating carrier layer (70) into which spherical or granular semiconductor components (11) are introduced, the semiconductor components (11) at least protrude from the layer on one side of the carrier layer (70), and the semiconductor components (11) each consist of a spherical or conformal substrate core (20) which has at least one conductive back contact layer (30) and an I-III-VI compound semiconductor is coated; - A back contact layer (80) on one side of the carrier layer (10), wherein a plurality of semiconductor components (11) on this side of the carrier layer have a surface which is free from III-VI compound semiconductors; and - A front contact layer (90) on the side of the carrier layer (70), on which the semiconductor components (11) have no surface that is free from I-III-VI compound semiconductors.

46. Solar cell according to claim 45, characterized in that it is produced by a method according to one or more of claims 37 to 44.

47. Solar cell according to one or both of claims 45 and 46, characterized in that the insulating carrier layer (70) consists of a thermoplastic material.

48. Solar cell according to one or more of the preceding claims 45 to 47, characterized in that the carrier layer (10) consists of a polymer from the group of epoxides, polycarbonates, polyesters, polyurethanes, polyacrylics and / or polyimides.

49. Solar cell according to one or more of the preceding claims 45 to 48, characterized in that the spherical or conformal semiconductor components (11) are semiconductor components according to one or more of claims 21 to 36.

50. Solar cell according to one or more of claims 45 to 49, characterized in that the semiconductor components (11) with an I-III-VI compound semiconductor from the group of copper indium diselenides, copper indium disulfides, Kupferindiumgalliumdiselenide and Kupferindiumgalliumdiseleniddisulfide are coated.

51. Solar cell according to one or more of claims 45 to 50, characterized in that the front contact layer (90) consists of a conductive material.

52. Solar cell according to claim 51, characterized in that the front contact layer (90) consists of a TCO (Transparent Conductive Oxide).

53. Solar cell according to one or more of claims 45 to 52, characterized in that the back contact layer (80) consists of a conductive material.

54. Solar cell according to claim 53, characterized in that the back contact layer (80) consists of a metal, a TCO (Transparent Conductive Oxide) or a polymer with conductive particles.

55. Solar cell according to claim 54, characterized in that the back contact layer (80) made of a polymer from the group of epoxy resins, polyurethanes and / or polyimides with conductive particles from a group made of carbon, indium, nickel, molybdenum, iron, nickel chromium, silver, There is aluminum and / or corresponding alloys or oxides.

56. 53. Solar cell according to claim 53, characterized in that the back contact layer (80) consists of an intrinsic conductive polymer.

57. Solar cell according to claim 56, characterized in that the back contact layer (80) consists of a polymer from the group of PANis.

58. Solar cell according to one or more of claims 45 to 57, characterized in that the solar cell has further functional layers in addition to the front contact layer (90) and the rear contact layer (80).

59. Photovoltaic module, characterized in that it has at least one solar cell according to one of the several of claims 45 to 58.