EP1619722A4 - Method for manufacturing backside-illuminated optical sensor - Google Patents

Method for manufacturing backside-illuminated optical sensor

Info

Publication number
EP1619722A4
EP1619722A4 EP04727414A EP04727414A EP1619722A4 EP 1619722 A4 EP1619722 A4 EP 1619722A4 EP 04727414 A EP04727414 A EP 04727414A EP 04727414 A EP04727414 A EP 04727414A EP 1619722 A4 EP1619722 A4 EP 1619722A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor substrate
region
substrate
backside
ccd unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP04727414A
Other languages
German (de)
French (fr)
Japanese (ja)
Other versions
EP1619722B1 (en
EP1619722A1 (en
Inventor
Hiroya Kobayashi
Hiroshi Akahori
Masaharu Muramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of EP1619722A1 publication Critical patent/EP1619722A1/en
Publication of EP1619722A4 publication Critical patent/EP1619722A4/en
Application granted granted Critical
Publication of EP1619722B1 publication Critical patent/EP1619722B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Dicing (AREA)

Abstract

A CCD unit (3) is formed on the front side of a semiconductor substrate (1). A region in the backside of the semiconductor substrate (1) corresponding to the CCD unit (3) is thinned while leaving a peripheral region (1a) around the above-mentioned region intact, and an accumulation layer (5) is formed over the backside of the semiconductor substrate (1). An electric wiring (7) electrically connected to the CCD unit (3) and an electrode pad (9) electrically connected to the electric wiring (7) are then formed on a region (1b) in the front side of the semiconductor substrate (1) which corresponds to the peripheral region (1a). Next, a supporting substrate (11) is adhered to the front side of the substrate (1) so that the CCD unit (3) is covered with the supporting substrate (11) but the electrode pad (9) is exposed. Then, the semiconductor substrate (1) and the supporting substrate (11) are cut at a position in the thinned portion of the semiconductor substrate (1) so that a part of the peripheral region (1a) corresponding to the region (1b) on which the electric wiring (7) and the electrode pad (9) are formed remains after cutting.
EP04727414A 2003-04-16 2004-04-14 Method for manufacturing backside-illuminated optical sensor Expired - Lifetime EP1619722B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003112047A JP4373695B2 (en) 2003-04-16 2003-04-16 Manufacturing method of backside illuminated photodetector
PCT/JP2004/005333 WO2004093195A1 (en) 2003-04-16 2004-04-14 Method for manufacturing backside-illuminated optical sensor

Publications (3)

Publication Number Publication Date
EP1619722A1 EP1619722A1 (en) 2006-01-25
EP1619722A4 true EP1619722A4 (en) 2007-05-30
EP1619722B1 EP1619722B1 (en) 2008-08-13

Family

ID=33296019

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04727414A Expired - Lifetime EP1619722B1 (en) 2003-04-16 2004-04-14 Method for manufacturing backside-illuminated optical sensor

Country Status (7)

Country Link
US (1) US7556975B2 (en)
EP (1) EP1619722B1 (en)
JP (1) JP4373695B2 (en)
KR (1) KR101052670B1 (en)
CN (1) CN100459137C (en)
DE (1) DE602004015764D1 (en)
WO (1) WO2004093195A1 (en)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7973380B2 (en) 2005-11-23 2011-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for providing metal extension in backside illuminated sensor for wafer level testing
JP4421589B2 (en) * 2006-10-10 2010-02-24 浜松ホトニクス株式会社 Photodetector
US8513789B2 (en) 2006-10-10 2013-08-20 Tessera, Inc. Edge connect wafer level stacking with leads extending along edges
US7901989B2 (en) 2006-10-10 2011-03-08 Tessera, Inc. Reconstituted wafer level stacking
JP4463793B2 (en) * 2006-10-10 2010-05-19 浜松ホトニクス株式会社 Photodetector
US7829438B2 (en) 2006-10-10 2010-11-09 Tessera, Inc. Edge connect wafer level stacking
JP4490406B2 (en) 2006-10-11 2010-06-23 浜松ホトニクス株式会社 Solid-state imaging device
JP4908150B2 (en) 2006-10-18 2012-04-04 浜松ホトニクス株式会社 Imaging device holding structure and imaging device
US8569876B2 (en) 2006-11-22 2013-10-29 Tessera, Inc. Packaged semiconductor chips with array
US7791199B2 (en) 2006-11-22 2010-09-07 Tessera, Inc. Packaged semiconductor chips
US7952195B2 (en) 2006-12-28 2011-05-31 Tessera, Inc. Stacked packages with bridging traces
JP5584474B2 (en) 2007-03-05 2014-09-03 インヴェンサス・コーポレイション Chip with rear contact connected to front contact by through via
CN101809739B (en) 2007-07-27 2014-08-20 泰塞拉公司 Reconstituted wafer stack packaging with after-applied pad extensions
JP2010535427A (en) 2007-07-31 2010-11-18 テッセラ，インコーポレイテッド Semiconductor packaging process using through silicon vias
CN101861646B (en) 2007-08-03 2015-03-18 泰塞拉公司 Stack packages using reconstituted wafers
US8043895B2 (en) 2007-08-09 2011-10-25 Tessera, Inc. Method of fabricating stacked assembly including plurality of stacked microelectronic elements
CN102067310B (en) 2008-06-16 2013-08-21 泰塞拉公司 Stacking of wafer-level chip scale packages having edge contacts and manufacture method thereof
JP5185207B2 (en) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 Photodiode array
JP5185208B2 (en) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 Photodiode and photodiode array
JP5185206B2 (en) * 2009-02-24 2013-04-17 浜松ホトニクス株式会社 Semiconductor photo detector
JP5185205B2 (en) * 2009-02-24 2013-04-17 浜松ホトニクス株式会社 Semiconductor photo detector
US8466542B2 (en) 2009-03-13 2013-06-18 Tessera, Inc. Stacked microelectronic assemblies having vias extending through bond pads
US8791575B2 (en) 2010-07-23 2014-07-29 Tessera, Inc. Microelectronic elements having metallic pads overlying vias
US9640437B2 (en) 2010-07-23 2017-05-02 Tessera, Inc. Methods of forming semiconductor elements using micro-abrasive particle stream
US8796135B2 (en) 2010-07-23 2014-08-05 Tessera, Inc. Microelectronic elements with rear contacts connected with via first or via middle structures
US8610259B2 (en) 2010-09-17 2013-12-17 Tessera, Inc. Multi-function and shielded 3D interconnects
US8847380B2 (en) 2010-09-17 2014-09-30 Tessera, Inc. Staged via formation from both sides of chip
KR101059490B1 (en) 2010-11-15 2011-08-25 테세라 리써치 엘엘씨 Conductive pads defined by embedded traces
US8736066B2 (en) 2010-12-02 2014-05-27 Tessera, Inc. Stacked microelectronic assemby with TSVS formed in stages and carrier above chip
US8587126B2 (en) 2010-12-02 2013-11-19 Tessera, Inc. Stacked microelectronic assembly with TSVs formed in stages with plural active chips
US8637968B2 (en) 2010-12-02 2014-01-28 Tessera, Inc. Stacked microelectronic assembly having interposer connecting active chips
US8610264B2 (en) 2010-12-08 2013-12-17 Tessera, Inc. Compliant interconnects in wafers
JP6803137B2 (en) * 2015-09-30 2020-12-23 浜松ホトニクス株式会社 Backside incident solid-state image sensor
JP2020088066A (en) * 2018-11-20 2020-06-04 キヤノン株式会社 Electronic component and apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06334158A (en) * 1993-05-21 1994-12-02 Hamamatsu Photonics Kk Rear irradiation type semiconductor element and manufacture thereof
JPH07245386A (en) * 1994-03-02 1995-09-19 Hamamatsu Photonics Kk Manufacture of semiconductor device
EP1152448A1 (en) * 1999-01-21 2001-11-07 Hamamatsu Photonics K.K. Electron tube

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0748532B2 (en) * 1987-06-29 1995-05-24 日本電気株式会社 Optical sensor package
JPS647561U (en) 1987-07-03 1989-01-17
US5134274A (en) * 1991-03-18 1992-07-28 Hughes Aircraft Company Two-sided solid-state imaging device
JP3441101B2 (en) * 1993-02-12 2003-08-25 浜松ホトニクス株式会社 Electron tube
JPH06268243A (en) 1993-03-12 1994-09-22 Hamamatsu Photonics Kk Manufacture of semiconductor energy detector
JP3315466B2 (en) 1993-05-07 2002-08-19 浜松ホトニクス株式会社 Semiconductor energy ray detector and method of manufacturing the same
JP3315465B2 (en) 1993-05-07 2002-08-19 浜松ホトニクス株式会社 Semiconductor energy ray detector and method of manufacturing the same
JP3317740B2 (en) 1993-05-07 2002-08-26 浜松ホトニクス株式会社 Semiconductor energy ray detector and method of manufacturing the same
JPH08241977A (en) * 1995-03-03 1996-09-17 Hamamatsu Photonics Kk Manufacture of semiconductor device
JP3486267B2 (en) 1995-09-14 2004-01-13 浜松ホトニクス株式会社 Back-illuminated semiconductor device and method of manufacturing the same
LU88704A1 (en) * 1996-01-26 1997-07-26 Euratom Thermal radiation detection device and presence detection device based on such a device
JP3620936B2 (en) * 1996-10-11 2005-02-16 浜松ホトニクス株式会社 Back-illuminated light receiving device and manufacturing method thereof
JP3462026B2 (en) * 1997-01-10 2003-11-05 岩手東芝エレクトロニクス株式会社 Method for manufacturing semiconductor device
JP3924352B2 (en) * 1997-06-05 2007-06-06 浜松ホトニクス株式会社 Backside illuminated light receiving device
JP3809012B2 (en) * 1998-05-14 2006-08-16 浜松ホトニクス株式会社 Solid-state imaging device
US6369415B1 (en) * 1999-12-22 2002-04-09 Pixel Vision, Inc. Back side thinned CCD with high speed channel stop
JP4588837B2 (en) * 2000-04-11 2010-12-01 浜松ホトニクス株式会社 Semiconductor photo detector
US6661084B1 (en) * 2000-05-16 2003-12-09 Sandia Corporation Single level microelectronic device package with an integral window

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06334158A (en) * 1993-05-21 1994-12-02 Hamamatsu Photonics Kk Rear irradiation type semiconductor element and manufacture thereof
JPH07245386A (en) * 1994-03-02 1995-09-19 Hamamatsu Photonics Kk Manufacture of semiconductor device
EP1152448A1 (en) * 1999-01-21 2001-11-07 Hamamatsu Photonics K.K. Electron tube

Also Published As

Publication number Publication date
WO2004093195A1 (en) 2004-10-28
KR20050114723A (en) 2005-12-06
CN1774810A (en) 2006-05-17
EP1619722B1 (en) 2008-08-13
KR101052670B1 (en) 2011-07-28
DE602004015764D1 (en) 2008-09-25
CN100459137C (en) 2009-02-04
JP4373695B2 (en) 2009-11-25
JP2004319791A (en) 2004-11-11
US7556975B2 (en) 2009-07-07
EP1619722A1 (en) 2006-01-25
US20070275488A1 (en) 2007-11-29

Similar Documents

Publication Publication Date Title
EP1619722A4 (en) Method for manufacturing backside-illuminated optical sensor
TW200629444A (en) Semiconductor device and manufacturing method thereof
CN102569194B (en) Protecting T-contacts of chip scale packages from moisture
EP1154474A4 (en) Semiconductor device and method of manufacture thereof
WO2002013258A3 (en) Backside contact for integrated circuit and method of forming same
JP2005235859A5 (en)
EP1085569A3 (en) Chip scale surface mount packages for semiconductor device and process of fabricating the same
WO2006101768A3 (en) Method for fabricating a wafer level package having through wafer vias for external package connectivity and related structure
JP2001144121A (en) Semiconductor device and method of manufacturing the same
EP1085570A3 (en) Chip scale surface mount package for semiconductor device and process of fabricating the same
TW200737506A (en) Semiconductor device and manufacturing method of the same
JP2009032929A (en) Semiconductor device and method of manufacturing the same
TW200503176A (en) High-performance CMOS SOI devices on hybrid crystal-oriented substrates
SG133571A1 (en) Semiconductor device, method of manufacturing the same, and camera module
JP2008141167A5 (en)
FR2910707A1 (en) IMAGE SENSOR WITH HIGH DENSITY INTEGRATION
EP1050905A3 (en) Semiconductor device with insulating layer
TW201637187A (en) Stress released image sensor package structure and method
TW200513766A (en) Bonding pad structure for a display and fabrication method thereof
EP1255297A3 (en) Electrically isolated power device package
EP1387397A3 (en) Solid-state imaging device and method of manufacturing the same
US9281332B2 (en) Package process of backside illumination image sensor
SG122016A1 (en) Semiconductor chip package and method of manufacture
TW200708783A (en) Optical electronics integrated semiconductor device and method for fabricating the same
EP2636065A1 (en) Rear-face illuminated solid state image sensors

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20051108

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL HR LT LV MK

DAX Request for extension of the european patent (deleted)
RBV Designated contracting states (corrected)

Designated state(s): DE FR GB

A4 Supplementary search report drawn up and despatched

Effective date: 20070427

17Q First examination report despatched

Effective date: 20070703

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

RIC1 Information provided on ipc code assigned before grant

Ipc: H04N 5/335 20060101ALI20080201BHEP

Ipc: H01L 27/148 20060101ALI20080201BHEP

Ipc: H01L 27/146 20060101AFI20080201BHEP

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REF Corresponds to:

Ref document number: 602004015764

Country of ref document: DE

Date of ref document: 20080925

Kind code of ref document: P

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20090514

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 13

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 14

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 15

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20230309

Year of fee payment: 20

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20230302

Year of fee payment: 20

P01 Opt-out of the competence of the unified patent court (upc) registered

Effective date: 20230509

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20230228

Year of fee payment: 20

REG Reference to a national code

Ref country code: DE

Ref legal event code: R071

Ref document number: 602004015764

Country of ref document: DE

REG Reference to a national code

Ref country code: GB

Ref legal event code: PE20

Expiry date: 20240413