EP1597606A2 - Miniature magnetic field sensor - Google Patents

Miniature magnetic field sensor

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Publication number
EP1597606A2
EP1597606A2 EP04712593A EP04712593A EP1597606A2 EP 1597606 A2 EP1597606 A2 EP 1597606A2 EP 04712593 A EP04712593 A EP 04712593A EP 04712593 A EP04712593 A EP 04712593A EP 1597606 A2 EP1597606 A2 EP 1597606A2
Authority
EP
European Patent Office
Prior art keywords
sensor according
bar
sensor
magnetic
winding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP04712593A
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German (de)
French (fr)
Other versions
EP1597606B1 (en
Inventor
Hélène JOISTEN
Robert Cuchet
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
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Publication of EP1597606A2 publication Critical patent/EP1597606A2/en
Application granted granted Critical
Publication of EP1597606B1 publication Critical patent/EP1597606B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/04—Measuring direction or magnitude of magnetic fields or magnetic flux using the flux-gate principle
    • G01R33/05—Measuring direction or magnitude of magnetic fields or magnetic flux using the flux-gate principle in thin-film element

Definitions

  • the invention relates to miniature magnetic field sensors.
  • micro-fluxgate sensor Such a product is sometimes designated by the expression "micro-fluxgate sensor”.
  • FIG. 1 is a block diagram of such a sensor 1, with a closed magnetic circuit 2, on the elongated branches 3 from which are wound excitation windings 4 and a detection winding 5.
  • the sensor is produced using conventional microtechnology techniques. This is how the magnetic circuit is made of a soft magnetic material deposited in thin layers (in particular: Permalloy®, amorphous material or other ). As for the excitation and detection coils, they are made in thin layers using a conductive material such as aluminum, copper, gold ... These coils can be solenoidal, or in planar spiral , especially.
  • the detection circuit collects the magnetic flux coming from the soft magnetic material excited by the current circulating in the excitation circuit (s).
  • the windings can be interleaved.
  • the detection winding can also be used for this purpose.
  • the signal requires a zone of saturation of the magnetic material and, in the case where saturation is reached, at least in part, the magnetic flux collected by the detection coil no longer has the same alternations in the presence of the continuous field to be measured.
  • the detection signal is the derivative of this flow.
  • the detection signal has a frequency twice the excitation signal.
  • microfluxgates are sensors typically intended to measure continuous or low frequency magnetic fields (or variations of magnetic field), of the order of a few nanoteslas currently, and in a range of about +/- 100 microteslas. They are used in particular to detect very small variations in the Earth's magnetic field.
  • microfluxgates are small has the advantage of bringing great lightness, little bulk (which is interesting in space, medical applications, in different industrial applications, in current clamps %) and a low manufacturing cost taking into account the implementation of collective manufacturing techniques, using magnetic microelectronics technology. Examples of integrated microfluxgate components are described in particular in the following documents:
  • offset jumps in practice prevent descending towards the detection of very weak magnetic fields.
  • the measurement time signal could theoretically present a noise of the order of nanoTesIa, but is in practice very degraded by the presence of instabilities or jumps, which can be of the order of 100 to 1000 nanoTeslas. These jumps occur at a few Hz, but also at a frequency of the order of every second, every minute, every hour, even at a daily frequency.
  • the subject of the invention is a magnetic field sensor, the configuration of which, which can be implemented by microtechnology techniques, allows measurement of weak fields, such as terrestrial magnetic fields, while minimizing instabilities or jumps.
  • a miniature magnetic field sensor comprising a magnetic core cooperating with at least one excitation winding and a detection winding, characterized in that this core is open and comprises at least one bar having tapered ends.
  • the core comprises at least one second bar having tapered ends
  • the core is formed by two bars which are symmetrical to each other with respect to a line separating them, the ends at least this bar are symmetrical to each other, at least one of the ends of this bar is symmetrical with respect to a longitudinal center line of this bar, at least one of the ends of this bar is asymmetrical with respect to a longitudinal center line of this bar, - one at least of the ends is delimited by rectilinear edges which converge towards each other, at least one of the ends ends in an acute point, this point forms an angle less than 45 °, preferably less than 30 ° , - at least one of the ends ends with a rounded point at least one of the ends has a length greater than the width of the bar,
  • this sensor comprises two excitation windings arranged on either side of a detection winding, this sensor is formed by a stack of layers.
  • FIG. 1 is a diagram of a conventional magnetic field sensor
  • FIG. 2 is a diagram of a magnetic field sensor according to the invention
  • FIGS. 3A to 3D are schematic representations of bars which can be integrated into the sensor of FIG. 2,
  • FIG. 2 represents a sensor according to the invention.
  • This sensor designated by the general reference 10 comprises in particular an open magnetic core, here formed of two parallel bars 11 and 12 of magnetic material, cooperating with excitation coils 13 and detection coils 14, and metal tracks 15 connected to these windings.
  • This circuit comprises tracks 16 in contact with some of the turns of the windings, thus delimiting the windings 13 and 14.
  • the parallel bars 11 and 12 have tapered or pointed ends.
  • a tapered or pointed end is an end of width which is not constant, but which decreases to a narrow, acute or rounded end.
  • the tapered ends of the two bars protrude from the windings. However, in a variant not shown, they may be located in whole or in part inside the windings.
  • the angle of the tip is advantageously acute (that is to say less than 90 °).
  • a bar 20 similar to those shown in Figure 2 is shown in Figure 3A (in part, insofar as only its left end is shown); the shape of this end, denoted 20A, corresponds to a symmetrical geometry, with a very acute angle (less than 45 °; this angle is even less than 30 ° in FIG. 2), the length L of this tapered end being substantially greater than the width of the bar.
  • FIG. 3B represents a bar 21 having a tapered end 21A, the point of which is shorter than the width of the bar, the end of this point being also slightly offset downward relative to the median axis. from this bar. Indeed, this point is not symmetrical.
  • FIG. 3C represents another bar 22 having another elongated point 22A, as in FIG. 3A, but whose asymmetry is such that the point is practically in line with the upper side of the bar.
  • FIG. 3D represents another bar 23 having a tapered end 23A whose sides are not straight, starting by converging before being connected to a blunt, enlarged "point”.
  • each of the bars has ends which are symmetrical to one another. It should however be understood that the same bar can have two ends of different geometries.
  • the two bars are symmetrical to one another with respect to a line separating them, and when they have non-symmetrical ends, as in the cases of FIGS. 3B and 3C, it may be preferable to bring the points (acute or rounded) closer to, or on the contrary away from, these ends.
  • FIGS. 4A to 4D show, by way of example, steps for manufacturing a sensor according to the invention.
  • a substrate 25 for example made of silicon (but it may alternatively be glass, quartz, ceramic, etc.), on which we will make a layer 26 of electrically insulating material (for example in SiO2) forming a kind of "winding box"; tracks 30 of a conductive material, such as copper, aluminum, gold, tungsten, AuTa, etc., are then deposited by electrolysis, then a planarization of this material is carried out. Finally, an insulating layer 31 is deposited (typically SiO2, with a thickness of 4 microns for example), before applying a planarization treatment (for example up to less than 1 micron).
  • a planarization treatment for example up to less than 1 micron.
  • FIG. 4B a deposit of magnetic material 33 (for example FeNi, or an amorphous material, over a thickness of the order of a micron).
  • An etching of this magnetic deposit is then carried out in order to define its geometry well, then it is covered with a new layer of insulator 34, typically made of SiO2 which is planarized to a thickness (for example of the order micron).
  • the localized layer of magnetic material is thus located on an insulating layer 31, under another insulating layer 34, and surrounded by insulator (in practice that deposited during its covering by the layer 34).
  • FIG. 4C the operations for producing the fittings are carried out
  • connections can be made by localized etching so as to dig trenches to the strands 30 and then deposit a conductive material in these trenches.
  • a conductive material 36 is deposited 36 with a thickness greater than the thicknesses considered above, typically greater than 1.5 microns. Then an engraving is carried out sort of delimiting in this conductive layer upper conductors, thus forming turns together with the strands 30 and the fittings 35.
  • an insulating deposit 37 is made, for example made of SiO2, then openings 38 are made to allow contacts with outside.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

The invention relates to a miniature magnetic field sensor (10) comprising a magnetic core which co-operates with at least one excitation coil and one detection coil. The invention is characterised in that the aforementioned core is open and comprises at least one bar (11, 12) having tapered ends. The inventive sensor is preferably made using microtechnology techniques.

Description

Capteur miniature de champ magnétique Miniature magnetic field sensor
L'invention concerne les capteurs miniatures de champ magnétique.The invention relates to miniature magnetic field sensors.
Un tel produit est parfois désigné par l'expression de "capteur micro- fluxgate".Such a product is sometimes designated by the expression "micro-fluxgate sensor".
La figure 1 est un schéma de principe d'un tel capteur 1 , avec un circuit magnétique fermé 2, sur les branches allongées 3 duquel sont enroulés des bobinages d'excitation 4 et un bobinage de détection 5.FIG. 1 is a block diagram of such a sensor 1, with a closed magnetic circuit 2, on the elongated branches 3 from which are wound excitation windings 4 and a detection winding 5.
Le capteur est réalisé selon les techniques classiques de microtechnologie. C'est ainsi que le circuit magnétique est en un matériau magnétique doux déposé en couches minces (notamment : Permalloy ®, matériau amorphe ou autre...). Quant aux bobinages d'excitation et de détection, ils sont réalisés en couches minces à l'aide d'un matériau conducteur tel que l'aluminium, le cuivre, l'or... Ces bobinages peuvent être solénoïdaux, ou en spirale planaire, notamment.The sensor is produced using conventional microtechnology techniques. This is how the magnetic circuit is made of a soft magnetic material deposited in thin layers (in particular: Permalloy®, amorphous material or other ...). As for the excitation and detection coils, they are made in thin layers using a conductive material such as aluminum, copper, gold ... These coils can be solenoidal, or in planar spiral , especially.
Le circuit de détection recueille le flux magnétique provenant du matériau magnétique doux excité par le courant circulant dans le(s) circuit(s) d'excitation.The detection circuit collects the magnetic flux coming from the soft magnetic material excited by the current circulating in the excitation circuit (s).
Les bobinages peuvent être entrelacés.The windings can be interleaved.
Il peut exister un bobinage supplémentaire pour appliquer un champ compensant le champ magnétique continu ou Basse Fréquence à mesurer. Mais le bobinage de détection peut aussi être utilisé à cet effet. En pratique, le signal nécessite une zone de saturation du matériau magnétique et, dans le cas où la saturation est atteinte, au moins en partie, le flux magnétique recueilli par le bobinage de détection n'a plus les mêmes alternances en présence du champ continu à mesurer. Or le signal de détection est la dérivée de ce flux.There may be an additional winding to apply a field compensating for the continuous or Low Frequency magnetic field to be measured. However, the detection winding can also be used for this purpose. In practice, the signal requires a zone of saturation of the magnetic material and, in the case where saturation is reached, at least in part, the magnetic flux collected by the detection coil no longer has the same alternations in the presence of the continuous field to be measured. However, the detection signal is the derivative of this flow.
Cette dissymétrie se traduit par l'apparition d'une harmonique d'ordreThis asymmetry results in the appearance of a harmonic of order
2 dans le signal de détection, liée au champ continu à mesurer. Pour augmenter le signal mesuré, on peut prévoir deux circuits de détection montés en différentiel, auquel cas, le signal de détection a une fréquence double du signal d'excitation.2 in the detection signal, linked to the continuous field to be measured. To increase the measured signal, it is possible to provide two differential detection circuits, in which case the detection signal has a frequency twice the excitation signal.
Les capteurs miniatures appelés "microfluxgates" sont des capteurs typiquement destinés à mesurer des champs magnétiques continus ou de basse fréquence (ou des variations de champ magnétique), de l'ordre de quelques nanoteslas actuellement, et dans une gamme d'environ +/- 100 microteslas. Ils sont notamment utilisés pour détecter de très faibles variations du champ magnétique terrestre.Miniature sensors called "microfluxgates" are sensors typically intended to measure continuous or low frequency magnetic fields (or variations of magnetic field), of the order of a few nanoteslas currently, and in a range of about +/- 100 microteslas. They are used in particular to detect very small variations in the Earth's magnetic field.
Le fait que les microfluxgates soient de petite taille a pour avantage d'apporter une grande légèreté, peu d'encombrement (ce qui est intéressant dans les applications spatiales, médicales, dans différentes applications industrielles, dans des pinces ampèremétriques...) et un faible coût de fabrication compte tenu de la mise en œuvre des techniques de fabrication collective, par la technologie de la micro-électronique magnétique. Des exemples de composants intégrés de type microfluxgates sont notamment décrits dans les documents suivants :The fact that the microfluxgates are small has the advantage of bringing great lightness, little bulk (which is interesting in space, medical applications, in different industrial applications, in current clamps ...) and a low manufacturing cost taking into account the implementation of collective manufacturing techniques, using magnetic microelectronics technology. Examples of integrated microfluxgate components are described in particular in the following documents:
- "High directional sensitivity of micromachined magnetic fluxgate sensors" de RAHMAN A. RUB, SUKIRTI GUPTA, and CHONG H. AHN - University of Cincinnati, Ohio, 45221 - 0030 - USA, Transducers "01 EUROSENSORS XV - 2001 ,- "High directional sensitivity of micromachined magnetic fluxgate sensors" by RAHMAN A. RUB, SUKIRTI GUPTA, and CHONG H. AHN - University of Cincinnati, Ohio, 45221 - 0030 - USA, Transducers "01 EUROSENSORS XV - 2001,
- "Performance and applications of a two axes fluxgate magnetic field sensor fabricated by a CMOS process" de H. GRUGER, R. GOTTFRIED-GOTTFRIED - Fraunhofer Institute for microelectronic circuits and Systems IMS Dresden, Germany - Sensor and Actuators A 91 (2001 ) 61-64,- "Performance and applications of a two axes fluxgate magnetic field sensor fabricated by a CMOS process" by H. GRUGER, R. GOTTFRIED-GOTTFRIED - Fraunhofer Institute for microelectronic circuits and Systems IMS Dresden, Germany - Sensor and Actuators A 91 (2001) 61-64,
- "Micro fluxgate magnetic sensor interface circuits using deltaS Modulation" Shuji KOGA, Akira YAMASAWA, Shoji KAWAHITO - Toyohashi Univ of Technology - T IEE Japan, vol 117-E, n°2, (1997) - "A miniaturized magnetic-field sensor System consisting of a planar fluxgate sensor and a CMOS readout circuitry" de R. GOTTFRIED-GOTTFRIED, W. BUDDE, R. JÀHNE, H. KUCK -- "Micro fluxgate magnetic sensor interface circuits using deltaS Modulation" Shuji KOGA, Akira YAMASAWA, Shoji KAWAHITO - Toyohashi Univ of Technology - T IEE Japan, vol 117-E, n ° 2, (1997) - "A miniaturized magnetic-field sensor System consisting of a planar fluxgate sensor and a CMOS readout circuitry" by R. GOTTFRIED-GOTTFRIED, W BUDDE, R. JÀHNE, H. KUCK -
Fraunhofer Institute for microelectronic circuits and Systems IMS Dresden, Germany - Sensor and Actuators A54 (1996) 443-447. Les circuits qui y sont décrits sont soit fermés (en boucle), soit ouverts avec des barreaux parallélépipédiques. Mais des problèmes d'instabilité ou de décalages (on parle parfois deFraunhofer Institute for microelectronic circuits and Systems IMS Dresden, Germany - Sensor and Actuators A54 (1996) 443-447. The circuits described there are either closed (looped) or open with parallelepiped bars. But problems of instability or discrepancies (we sometimes speak of
"sauts d'offset") empêchent en pratique de descendre vers la détection de très faibles champs magnétiques. Le signal temporel de mesure pourrait théoriquement présenter un bruit de l'ordre du nanoTesIa, mais est en pratique très dégradé par la présence d'instabilités ou de sauts, pouvant être de l'ordre de 100 à 1000 nanoTeslas. Ces sauts se produisent à quelques Hz, mais aussi à une fréquence de l'ordre de toutes les secondes, toutes les minutes, toutes les heures, voire à une fréquence quotidienne."offset jumps") in practice prevent descending towards the detection of very weak magnetic fields. The measurement time signal could theoretically present a noise of the order of nanoTesIa, but is in practice very degraded by the presence of instabilities or jumps, which can be of the order of 100 to 1000 nanoTeslas. These jumps occur at a few Hz, but also at a frequency of the order of every second, every minute, every hour, even at a daily frequency.
L'invention a pour objet un capteur de champ magnétique, dont la configuration, pouvant être mise en œuvre par les techniques de microtechnologie, permette une mesure de faibles champs, tels les champs magnétiques terrestres, tout en minimisant les instabilités ou les sauts.The subject of the invention is a magnetic field sensor, the configuration of which, which can be implemented by microtechnology techniques, allows measurement of weak fields, such as terrestrial magnetic fields, while minimizing instabilities or jumps.
Elle propose à cet effet un capteur miniature de champ magnétique comportant un noyau magnétique coopérant avec au moins un bobinage d'excitation et un bobinage de détection, caractérisé en ce noyau est ouvert et comporte au moins un barreau ayant des extrémités effilées.To this end, it proposes a miniature magnetic field sensor comprising a magnetic core cooperating with at least one excitation winding and a detection winding, characterized in that this core is open and comprises at least one bar having tapered ends.
Selon des dispositions préférées, éventuellement combinées : le noyau comporte au moins un second barreau ayant des extrémités effilées, le noyau est formé de deux barreaux symétriques l'un de l'autre vis-à-vis d'une ligne les séparant, les extrémités d'au moins ce barreau sont symétriques l'une de l'autre, l'une au moins des extrémités de ce barreau est symétrique par rapport à une ligne médiane longitudinale de ce barreau, l'une au moins des extrémités de ce barreau est dissymétrique par rapport à une ligne médiane longitudinale de ce barreau, - l'une au moins des extrémités est délimitée par des bords rectilignes qui convergent l'un vers l'autre, l'une au moins des extrémités se termine par une pointe aiguë, cette pointe forme un angle inférieur à 45°, de préférence inférieur e 30°, - l'une au moins des extrémités se termine par une pointe arrondie l'une au moins des extrémités a une longueur supérieure à la largeur du barreau,According to preferred arrangements, possibly combined: the core comprises at least one second bar having tapered ends, the core is formed by two bars which are symmetrical to each other with respect to a line separating them, the ends at least this bar are symmetrical to each other, at least one of the ends of this bar is symmetrical with respect to a longitudinal center line of this bar, at least one of the ends of this bar is asymmetrical with respect to a longitudinal center line of this bar, - one at least of the ends is delimited by rectilinear edges which converge towards each other, at least one of the ends ends in an acute point, this point forms an angle less than 45 °, preferably less than 30 ° , - at least one of the ends ends with a rounded point at least one of the ends has a length greater than the width of the bar,
ce capteur comporte deux bobinages d'excitation disposés de part et d'autre d'un bobinage de détection, ce capteur est formé d'un empilement de couches. Des objets, caractéristiques et avantages de l'invention ressorlent de la description qui suit, donnée à titre d'exemple illustratif non limitatif, en regard des dessins annexés sur lesquels :this sensor comprises two excitation windings arranged on either side of a detection winding, this sensor is formed by a stack of layers. Objects, characteristics and advantages of the invention appear from the following description, given by way of nonlimiting illustrative example, with reference to the appended drawings in which:
• la figure 1 est un schéma d'un capteur de champ magnétique classique,FIG. 1 is a diagram of a conventional magnetic field sensor,
• la figure 2 est un schéma d'un capteur de champ magnétique selon l'invention,FIG. 2 is a diagram of a magnetic field sensor according to the invention,
• les figures 3A à 3D sont des représentations schématiques de barreaux pouvant être intégrés au capteur de la figure 2,FIGS. 3A to 3D are schematic representations of bars which can be integrated into the sensor of FIG. 2,
• les figures 4A à 4D sont des schémas représentant quatre étapes successives de la fabrication d'un capteur selon l'invention, et • la figure 5 est un diagramme corrélant, pour un capteur conforme à l'invention, le bruit (en dBV / VHz) et le signal (en dBV) au numéro de puce analysée dans un lot. La figure 2 représente un capteur conforme à l'invention. Ce capteur désigné sous la référence générale 10 comporte notamment un noyau magnétique ouvert, ici formé de deux barreaux parallèles 11 et 12 en matériau magnétique, coopérant avec des bobinages d'excitation 13 et des bobinages de détection 14, et des pistes métalliques 15 connectées à ces bobinages. Ce circuit comporte des pistes 16 en contact avec certaines des spires des bobinages, délimitant ainsi les bobinages 13 et 14.• Figures 4A to 4D are diagrams representing four successive stages in the manufacture of a sensor according to the invention, and • Figure 5 is a diagram correlating, for a sensor according to the invention, noise (in dBV / VHz) and the signal (in dBV) to the chip number analyzed in a batch. FIG. 2 represents a sensor according to the invention. This sensor designated by the general reference 10 comprises in particular an open magnetic core, here formed of two parallel bars 11 and 12 of magnetic material, cooperating with excitation coils 13 and detection coils 14, and metal tracks 15 connected to these windings. This circuit comprises tracks 16 in contact with some of the turns of the windings, thus delimiting the windings 13 and 14.
Selon l'invention, les barreaux parallèles 11 et 12 ont des extrémités effilées ou en pointe. Dans le contexte de l'invention, une extrémité effilée ou en pointe est une extrémité de largeur non pas constante, mais décroissante jusqu'à une extrémité étroite, aiguë ou arrondie. Sur la figure 2, les extrémités effilées des deux barreaux sont en saillie vis-à-vis des bobinages. Toutefois, en variante non représentée, elles peuvent se situer en tout ou partie à l'intérieur des bobinages. L'angle de la pointe est avantageusement aigu (c'est à dire inférieur à 90°).According to the invention, the parallel bars 11 and 12 have tapered or pointed ends. In the context of the invention, a tapered or pointed end is an end of width which is not constant, but which decreases to a narrow, acute or rounded end. In Figure 2, the tapered ends of the two bars protrude from the windings. However, in a variant not shown, they may be located in whole or in part inside the windings. The angle of the tip is advantageously acute (that is to say less than 90 °).
Un barreau 20 similaire à ceux représentés à la figure 2 est représenté à la figure 3A (en partie, dans la mesure où seule son extrémité gauche est représentée) ; la forme de cette extrémité notée 20A correspond à une géométrie symétrique, avec un angle très aigu (inférieur à 45° ; cet angle est même inférieur à 30° sur la figure 2), la longueur L de cette extrémité effilée étant substantiellement supérieure à la largeur du barreau.A bar 20 similar to those shown in Figure 2 is shown in Figure 3A (in part, insofar as only its left end is shown); the shape of this end, denoted 20A, corresponds to a symmetrical geometry, with a very acute angle (less than 45 °; this angle is even less than 30 ° in FIG. 2), the length L of this tapered end being substantially greater than the width of the bar.
Mais bien d'autres formes d'extrémités en pointe sont possibles.But many other forms of tip ends are possible.
C'est ainsi que la figure 3B représente un barreau 21 ayant une extrémité effilée 21A dont la pointe est plus courte que la largeur du barreau, l'extrémité de cette pointe étant en outre légèrement décalée vers le bas par rapport à l'axe médian de ce barreau. En effet, cette pointe n'est pas symétrique.Thus, FIG. 3B represents a bar 21 having a tapered end 21A, the point of which is shorter than the width of the bar, the end of this point being also slightly offset downward relative to the median axis. from this bar. Indeed, this point is not symmetrical.
La figure 3C représente un autre barreau 22 ayant une autre pointe allongée 22A, comme sur la figure 3A, mais dont la dissymétrie est telle que la pointe est pratiquement dans le prolongement du côté supérieur du barreau. Enfin la figure 3D représente un autre barreau 23 ayant une extrémité effilée 23A dont les flancs ne sont pas rectilignes, commençant par converger avant de se raccorder à une "pointe" émoussée, élargie.FIG. 3C represents another bar 22 having another elongated point 22A, as in FIG. 3A, but whose asymmetry is such that the point is practically in line with the upper side of the bar. Finally, FIG. 3D represents another bar 23 having a tapered end 23A whose sides are not straight, starting by converging before being connected to a blunt, enlarged "point".
Sur la figure 2, chacun des barreaux a des extrémités symétriques l'une de l'autre. Il doit toutefois bien être compris qu'un même barreau peut avoir deux extrémités de géométries différentes. De manière avantageuse, mais non nécessaire, les deux barreaux sont symétriques l'un de l'autre vis-à- vis d'une ligne les séparant, et lorsqu'ils ont des extrémités non symétriques, comme dans les cas des figures 3B et 3C, il peut se révéler préférable de rapprocher, ou au contraire éloigner, les pointes (aiguës ou arrondies) de ces extrémités.In FIG. 2, each of the bars has ends which are symmetrical to one another. It should however be understood that the same bar can have two ends of different geometries. Advantageously, but not necessary, the two bars are symmetrical to one another with respect to a line separating them, and when they have non-symmetrical ends, as in the cases of FIGS. 3B and 3C, it may be preferable to bring the points (acute or rounded) closer to, or on the contrary away from, these ends.
Dans une version particulièrement simple, il n'y a qu'un seul barreau (11 , ou 12) ; il est alors avantageux de choisir une configuration dans laquelle les extrémités sont symétriques par rapport à une ligne médiane de ce barreau, comme par exemple celle des figures 3A ou 3D.In a particularly simple version, there is only one bar (11, or 12); it is then advantageous to choose a configuration in which the ends are symmetrical with respect to a center line of this bar, such as for example that of FIGS. 3A or 3D.
De manière tout à fait surprenante il a été constaté que le composant de la figure 2, avec des barreaux dont les extrémités sont effilées, avait des résultats meilleurs que plusieurs autres configurations imaginées, pourtant plus habituelles. Avec un circuit ouvert, on pouvait s'attendre à une consommation de courant plus importante qu'avec un circuit fermé. Par ailleurs l'effilement des extrémités des barreaux pouvait paraître ne rien pouvoir apporter. Pourtant il est apparu qu'il conduisait à une moindre consommation de courant que les autres solutions standards, tout en présentant bien moins d'instabilités. Il présente en outre un rapport signal/bruit du même ordre de grandeur que les autres configurations connues.Quite surprisingly, it has been found that the component of FIG. 2, with bars whose ends are tapered, had better results than several other imagined configurations, however more usual. With an open circuit, one could expect a higher current consumption than with a closed circuit. Furthermore, the tapering of the ends of the bars could appear to be incapable of bringing anything. However it appeared that it led to a lower current consumption than the other standard solutions, while presenting much less instabilities. It also has a signal / noise ratio of the same order of magnitude as the other known configurations.
Il est à noter que les quelques exemples de capteurs trouvés dans la littérature (voir ci-dessus) et qui ont proposé des circuits ouverts ont tous proposé des barreaux parallélépipédiques.It should be noted that the few examples of sensors found in the literature (see above) and which have proposed open circuits have all proposed parallelepiped bars.
Il peut être noté ici, de manière très générale dans les phénomènes magnétiques, que les pointes sont souvent considérées comme ayant des effets de configuration de domaines magnétiques. Le problème est qu'il est difficile de contrôler la configuration des domaines magnétiques. Les figures 4A à 4D représentent à titre d'exemple des étapes de fabrication d'un capteur conforme à l'invention.It can be noted here, very generally in magnetic phenomena, that spikes are often considered to have the effect of configuring magnetic domains. The problem is that it is difficult to control the configuration of the magnetic domains. FIGS. 4A to 4D show, by way of example, steps for manufacturing a sensor according to the invention.
Il s'agit d'étapes à peine modifiées par rapport à celles qui peuvent être utilisées pour certains capteurs miniatures déjà réalisés en microtechnologie, mais avec des circuits magnétiques fermés ou des circuits magnétiques ouverts avec des extrémités à angle droit.These steps are barely modified from those which can be used for certain miniature sensors already produced in microtechnology, but with closed magnetic circuits or open magnetic circuits with ends at right angles.
Selon la figure 4A, on part d'un substrat 25, par exemple en silicium (mais il peut s'agir en variante de verre, quartz, céramique, ...), sur lequel on va réaliser une couche 26 en matériau électriquement isolant (par exemple en SiO2) formant une sorte de "caisson de bobinage" ; on dépose ensuite par électrolyse des pistes 30 d'un matériau conducteur, tel que le cuivre, l'aluminium, l'or, le tungstène, AuTa,... puis on procède à une planarisation de ce matériau. On dépose enfin une couche d'isolant 31 (typiquement du SiO2, avec une épaisseur de 4 microns par exemple), avant de lui appliquer un traitement de planarisation (par exemple jusqu'à moins de 1 micron).According to FIG. 4A, we start from a substrate 25, for example made of silicon (but it may alternatively be glass, quartz, ceramic, etc.), on which we will make a layer 26 of electrically insulating material (for example in SiO2) forming a kind of "winding box"; tracks 30 of a conductive material, such as copper, aluminum, gold, tungsten, AuTa, etc., are then deposited by electrolysis, then a planarization of this material is carried out. Finally, an insulating layer 31 is deposited (typically SiO2, with a thickness of 4 microns for example), before applying a planarization treatment (for example up to less than 1 micron).
Puis on procède (figure 4B) à un dépôt de matériau magnétique 33 (par exemple du FeNi, ou un matériau amorphe, sur une épaisseur de l'ordre du micron). On effectue ensuite une gravure de ce dépôt magnétique pour bien en définir la géométrie, puis on le recouvre d'une nouvelle couche d'isolant 34, typiquement en SiO2 que l'on planarise jusqu'à une épaisseur (par exemple de l'ordre du micron). La couche localisée de matériau magnétique est ainsi localisée sur une couche isolante 31 , sous une autre couche isolante 34, et entourée d'isolant (en pratique celui déposé lors de son recouvrement par la couche 34). A la figure 4C, on procède aux opérations de réalisation des raccordsThen one proceeds (FIG. 4B) to a deposit of magnetic material 33 (for example FeNi, or an amorphous material, over a thickness of the order of a micron). An etching of this magnetic deposit is then carried out in order to define its geometry well, then it is covered with a new layer of insulator 34, typically made of SiO2 which is planarized to a thickness (for example of the order micron). The localized layer of magnetic material is thus located on an insulating layer 31, under another insulating layer 34, and surrounded by insulator (in practice that deposited during its covering by the layer 34). In FIG. 4C, the operations for producing the fittings are carried out
35 aux brins inférieurs, en sorte de commencer à former les futures spires. La réalisation de ces raccords peut se faire par gravure localisée en sorte de creuser des tranchées jusqu'aux brins 30 puis dépôt d'un matériau conducteur dans ces tranchées. A la figure 4D, on procède à un dépôt 36 d'un matériau conducteur d'épaisseur supérieure aux épaisseurs considérées précédemment, typiquement supérieure à 1 ,5 micron. On effectue ensuite à une gravure en sorte de délimiter dans cette couche conductrice des conducteurs supérieurs, formant ainsi des spires conjointement avec les brins 30 et les raccords 35. On procède ensuite à un dépôt isolant 37, par exemple en SiO2, puis on réalise des ouvertures 38 pour permettre des contacts avec l'extérieur. A des fins de test, une pluralité de puces a été réalisée selon la géométrie précitée, en vue d'en évaluer les performances, pour deux niveaux d'intensité (20 mA et 40 mA). La figure 5 recense pour ces diverses puces les mesures qui y ont été faites (les numéros désignant ces puces sont arbitraires). Note aux inventeurs : est il exact de définir ainsi ce qui est en abscisse sur cette figure 5 ?35 at the lower strands, so begin to form the future turns. These connections can be made by localized etching so as to dig trenches to the strands 30 and then deposit a conductive material in these trenches. In FIG. 4D, a conductive material 36 is deposited 36 with a thickness greater than the thicknesses considered above, typically greater than 1.5 microns. Then an engraving is carried out sort of delimiting in this conductive layer upper conductors, thus forming turns together with the strands 30 and the fittings 35. Next, an insulating deposit 37 is made, for example made of SiO2, then openings 38 are made to allow contacts with outside. For testing purposes, a plurality of chips were produced according to the aforementioned geometry, with a view to evaluating their performance, for two intensity levels (20 mA and 40 mA). Figure 5 lists the measurements made for these various chips (the numbers designating these chips are arbitrary). Note to the inventors: is it correct to define what is on the abscissa in this figure 5?
On peut noter sur cette figure que le signal vaut en moyenne -41 dB pour 20 mA. Ce courant de 20 mA semble être un courant optimum.It can be noted in this figure that the signal is worth on average -41 dB for 20 mA. This 20 mA current seems to be an optimum current.
Ces puces présentent des spectres parfaitement plats, sans instabilités, dans les basses fréquences, visibles sur le spectre (depuis quelques dixièmes de Hertz à 50 Hz; gamme où apparaissent fréquemment des instabilités avec les autres configurations connues). Il est par ailleurs apparu que la configuration de l'invention permet une plus grande stabilité, pour une moindre consommation de courant, mais en ayant en outre un rapport signal- bruit du même ordre de grandeur, sinon meilleur, que ces autres configurations. These chips present perfectly flat spectra, without instabilities, in the low frequencies, visible on the spectrum (from a few tenths of Hertz at 50 Hz; range where instabilities frequently appear with the other known configurations). It has also appeared that the configuration of the invention allows greater stability, for less current consumption, but also having a signal-to-noise ratio of the same order of magnitude, if not better, than these other configurations.

Claims

REVENDICATIONS
1. Capteur miniature de champ magnétique (10) comportant un noyau magnétique (11 , 12, 20, 21 , 22, 23) coopérant avec au moins un bobinage d'excitation et un bobinage de détection, caractérisé en ce noyau est ouvert et comporte au moins un barreau ayant des extrémités effilées (20A, 21A, 22A, 23A).1. Miniature magnetic field sensor (10) comprising a magnetic core (11, 12, 20, 21, 22, 23) cooperating with at least one excitation winding and a detection winding, characterized in that this core is open and comprises at least one bar having tapered ends (20A, 21A, 22A, 23A).
2. Capteur selon la revendication 1 , caractérisé en ce que le noyau comporte au moins un second barreau (11 , 12) ayant des extrémités effilées.2. Sensor according to claim 1, characterized in that the core comprises at least a second bar (11, 12) having tapered ends.
3. Capteur selon la revendication 2, caractérisé en ce que le noyau est formé de deux barreaux symétriques l'un de l'autre vis-à-vis d'une ligne les séparant.3. Sensor according to claim 2, characterized in that the core is formed of two bars symmetrical to one another with respect to a line separating them.
4. Capteur selon l'une quelconque des revendications 1 à 3, caractérisé en ce que les extrémités d'au moins ce barreau (11 , 12) sont symétriques l'une de l'autre. 4. Sensor according to any one of claims 1 to 3, characterized in that the ends of at least this bar (11, 12) are symmetrical to one another.
5. Capteur selon l'une quelconque des revendications 1 à 4, caractérisé en ce que l'une au moins des extrémités de ce barreau (11 , 12, 20, 23) est symétrique par rapport à une ligne médiane longitudinale de ce barreau.5. Sensor according to any one of claims 1 to 4, characterized in that at least one of the ends of this bar (11, 12, 20, 23) is symmetrical with respect to a longitudinal center line of this bar.
6. Capteur selon l'une quelconque des revendications 1 à 4, caractérisé en ce que l'une au moins des extrémités de ce barreau (21 , 22) est dissymétrique par rapport à une ligne médiane longitudinale de ce barreau.6. Sensor according to any one of claims 1 to 4, characterized in that at least one of the ends of this bar (21, 22) is asymmetrical with respect to a longitudinal center line of this bar.
7. Capteur selon l'une quelconque des revendications 1 à 6, caractérisé en ce que l'une au moins des extrémités (20A, 21 A, 22A) est délimitée par des bords rectilignes qui convergent l'un vers l'autre.7. Sensor according to any one of claims 1 to 6, characterized in that at least one of the ends (20A, 21 A, 22A) is delimited by rectilinear edges which converge towards one another.
8. Capteur selon l'une quelconque des revendications 1 à 7, caractérisé en ce que l'une au moins des extrémités (20A, 21 A, 22A) se termine par une pointe aiguë.8. Sensor according to any one of claims 1 to 7, characterized in that at least one of the ends (20A, 21 A, 22A) ends in an acute point.
9. Capteur selon la revendication 8, caractérisé en ce que cette pointe forme un angle inférieur à 45°.9. Sensor according to claim 8, characterized in that this point forms an angle less than 45 °.
10. Capteur selon l'une quelconque des revendications 1 à 7, caractérisé en ce que l'une au moins des extrémités (23A) se termine par une pointe arrondie. 10. Sensor according to any one of claims 1 to 7, characterized in that at least one of the ends (23A) ends in a rounded point.
11. Capteur selon l'une quelconque des revendications 1 à 10, caractérisé en ce que l'une au moins des extrémités a une longueur supérieure à la largeur du barreau.11. Sensor according to any one of claims 1 to 10, characterized in that at least one of the ends has a length greater than the width of the bar.
12. Capteur selon l'une quelconque des revendications 1 à 11 , caractérisé en ce que les extrémités sont situées en dehors des bobinages d'excitation et de détection.12. Sensor according to any one of claims 1 to 11, characterized in that the ends are located outside the excitation and detection coils.
13. Capteur selon l'une quelconque des revendications 1 à 11 , caractérisé en ce que les extrémités sont au moins en partie à l'intérieur d'un bobinage. 13. Sensor according to any one of claims 1 to 11, characterized in that the ends are at least partly inside a coil.
14. Capteur selon la revendication 13, caractérisé en ce que ce bobinage est un bobinage d'excitation.14. Sensor according to claim 13, characterized in that this winding is an excitation winding.
15. Capteur selon l'une quelconque des revendications 1 à 14, caractérisé en ce qu'il comporte deux bobinages d'excitation disposés de part et d'autre d'un bobinage de détection. 15. Sensor according to any one of claims 1 to 14, characterized in that it comprises two excitation windings arranged on either side of a detection winding.
16. Capteur selon l'une quelconque des revendications 1 à 15, caractérisé en ce qu'il est formé d'un empilement de couches (26, 30, 31 , 35,16. Sensor according to any one of claims 1 to 15, characterized in that it is formed of a stack of layers (26, 30, 31, 35,
33, 34, 36, 37). 33, 34, 36, 37).
EP04712593.5A 2003-02-24 2004-02-19 Miniature magnetic field sensor Expired - Lifetime EP1597606B1 (en)

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FR0302238A FR2851661B1 (en) 2003-02-24 2003-02-24 MINIATURE MAGNETIC FIELD SENSOR
PCT/FR2004/000389 WO2004077074A2 (en) 2003-02-24 2004-02-19 Miniature magnetic field sensor

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FR2851661B1 (en) 2003-02-24 2005-05-20 Commissariat Energie Atomique MINIATURE MAGNETIC FIELD SENSOR
FR2894679B1 (en) * 2005-12-14 2008-03-21 Commissariat Energie Atomique MINIATURE MAGNETIC CORE, SENSOR COMPRISING SAME AND PROCESS FOR MAKING SAME
FR2900735B1 (en) * 2006-05-04 2008-08-22 Commissariat Energie Atomique FLUXGATE TYPE MICROMAGNETOMETER WITH IMPROVED EXCITATION WINDING
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EP0540692B1 (en) * 1990-07-26 1995-04-26 Eastman Kodak Company Miniature high-sensitivity magnetoresistive magnetometer
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WO2004077074A3 (en) 2004-12-09
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JP2006518845A (en) 2006-08-17
FR2851661A1 (en) 2004-08-27

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