EP1580837B1 - Semiconductor device with antenna and collecting screen - Google Patents

Semiconductor device with antenna and collecting screen Download PDF

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Publication number
EP1580837B1
EP1580837B1 EP05290458A EP05290458A EP1580837B1 EP 1580837 B1 EP1580837 B1 EP 1580837B1 EP 05290458 A EP05290458 A EP 05290458A EP 05290458 A EP05290458 A EP 05290458A EP 1580837 B1 EP1580837 B1 EP 1580837B1
Authority
EP
European Patent Office
Prior art keywords
antenna
collector screen
strips
collector
screen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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EP05290458A
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German (de)
French (fr)
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EP1580837A1 (en
Inventor
Daniel Gloria
Sébastien Montusclat
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STMicroelectronics SA
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STMicroelectronics SA
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Publication of EP1580837A1 publication Critical patent/EP1580837A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/48—Earthing means; Earth screens; Counterpoises
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
    • H01Q1/526—Electromagnetic shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
    • H01Q13/10—Resonant slot antennas
    • H01Q13/106—Microstrip slot antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/06—Details
    • H01Q9/065—Microstrip dipole antennas

Definitions

  • the present invention relates to the field of semiconductor devices.
  • Radio transmitting / receiving antennas of radio signals can be made on glass plates so as to constitute small components which are then associated on connection plates to integrated circuit components or directly fixed on such circuits.
  • Such structures require the manufacture on the one hand of integrated circuits and on the other hand antenna components and then to associate them.
  • the object of the present invention is to provide integrated circuit components which also incorporate radio transmitting / receiving antennas and which are such that these antennas are of good quality even when the radio signals are at high frequencies.
  • the semiconductor device comprises a substrate, in particular made of silicon, and layers formed on this substrate in at least one of which is formed an antenna transmitting / receiving radio signals.
  • the semiconductor device further comprises, between said antenna and said substrate, a collector screen of currents induced between this antenna and this substrate, this collector screen being made in at least one layer and comprising at least one branch main connected to a fixed potential, in particular a mass, and secondary branches only connected to said main branch by one of their ends so that this collector screen has a tree structure.
  • said collector screen is preferably symmetrical with respect to an axis corresponding to the axis of the antenna.
  • the main branch of said collector screen preferably extends at least in part according to the input / output band of the antenna.
  • the main branch of said collector screen is offset relative to the zone or zones in which the field of the antenna is the strongest or the sensitivity of the latter is the strongest.
  • FIG. 1 it can be seen that there is shown a semiconductor device 1 which comprises a silicon substrate 2 on which are formed different superimposed layers 3.
  • a collector screen 4 In layers close to the substrate 2 is formed a collector screen 4 and in a layer near the final layer is carried a radio transmitting antenna / receiver of radio signals.
  • the collector screen 4 is made in the following manner.
  • a layer 3a On the substrate 2 is formed a layer 3a.
  • a main branch 6 which comprises a longitudinal strip 6a and two strips 6b and 6c inclined at 45 ° and symmetrically with respect to the direction of the longitudinal strip 6a, so that the longitudinal strip 6a and the two inclined strips 6b and 6c form a Y.
  • a multiplicity of secondary branches 7 which are connected by vias 8 to the main branch 6 and which determine with the latter a tree structure.
  • this multiplicity of secondary branches 7 comprises a multiplicity of transverse strips 7a and 7b which extend on either side of the longitudinal band 6a of the main branch 6 and meet under this band 6a, vias 8a connecting these junctions at the longitudinal band 6a.
  • the multiplicity of secondary branches 7 also comprises a multiplicity of transverse strips 7c which extend outwardly to the zone situated between the two inclined strips 6b and 6c of the main branch 6 and a multiplicity of longitudinal strips 7e which extend in this zone. , such that the transverse strips 7c and the longitudinal strips 7e form L and join under the band 6b, vias 8b connecting these junctions to the inclined band 6b.
  • the multiplicity of secondary branches 7 further comprises a multiplicity of transverse strips 7d which extend outwardly to the zone situated between the two inclined strips 6b and 6c of the main branch 6 and a multiplicity of longitudinal strips 7f which extend in this direction. zone, such that the transverse strips 7d and the longitudinal strips 7f form L and join under the band 6c, vias 8c connecting these junctions to the inclined band 6b.
  • transverse strips 7a and 7c on the one hand and the transverse strips 7b and 7d on the other hand are evenly distributed and the longitudinal strips are evenly spaced and are only connected to the main branch 6.
  • the lengths of these strips are such that they extend over a rectangular area.
  • a layer 3e in which a via 9 is made connected to the end portion of the strip 6a of the main branch 6 opposite its strips 6b and 6c and, above this layer 3, is provided a layer 3f in which is formed a longitudinal strip 10 connected to via 9.
  • the layer 3f is provided at least one layer 3g.
  • a penultimate layer 3h is carried out the antenna 5 and above this layer 3h is provided a last layer 3i passivation.
  • the dipole antenna 5 comprises two strands 11 and 12 which comprise two longitudinal strips 11a and 12a which are close to one another and which extend parallel to each other, above the longitudinal strip 6a. of the collector screen 4, and two transverse strips 11b and 12b which extend away from each other.
  • the ends of the branches 11a and 12a of the antenna 5, opposed to the branches are connected to an integrated component not shown by means not shown, this component being an electrical signal transmitter when it is a transmitting antenna. radio signals or an electrical signal receiver in the case of a radio-receiving antenna.
  • the antenna 5 and the collector screen 4 are arranged relative to each other so that the junction zone A of the strips 11a, 11b and 12a, 12b of the antenna 5 is above the joining zone E of the strips 6a, 6b and 6c of the collector screen 4.
  • the length of the transverse strips 11b and 12b of the antenna 5 is smaller than the length of the transverse strips 7a and 7b of the collector screen 4, so that the antenna 5 is completely covered by the collector screen 4.
  • the strips 6a, 6b and 6c constituting the main branch 6 of the collector screen 4 are angularly offset from the bands 11b and 12b of the antenna 5, the strip 6a of 90 ° and the bands 6b and 6c of 45 °.
  • the longitudinal strip 10 of the collector screen 4 extends opposite the zone covered by the latter so as to be connected to another part of the semiconductor device 1 at a fixed potential such that mass.
  • this longitudinal branch 10 could be connected to the ground of the antenna 5 or the via 9 could be extended to be connected to the ground of the antenna 5.
  • the function of the collector screen 4 is to collect the currents induced by electrostatic coupling between the antenna 5 and the silicon substrate 2. Its arborescent structure, which furthermore has the same plane of symmetry as the antenna 5 in which the antenna 5 collector screen 4 and the antenna 5 have corresponding longitudinal axes of symmetry, prevents induced currents from circulating in a loop.
  • the collector screen 13 shown in FIG. 4 is produced, in contrast to the preceding example, in a single layer of the semiconductor device 1, for example in the layer 3b.
  • This collector screen 13 comprises, like the collector screen 6, a main branch 14 which has a longitudinal strip 14a and two inclined strips 14b and 14c.
  • This main branch 14 further comprises two strips 14d and 14e, inclined at 45 ° and opposite the strips 14b and 14c, so that the strips 14a, 14b, 14c and 14d form a cross.
  • the collector screen 13 further comprises a multiplicity of secondary branches 15 associated with the inclined strips 14a, 14b, 14c and 14d and which comprise longitudinal strips 15a and transverse strips 15b which, as in the previous example, constitute spaced Ls. .
  • the collector screen 13 has a tree structure whose strips 15a and 15b of its secondary branches 15 are only connected to the strips 14a, 14b, 14c and 14d of its main branch 14 by one from their ends, this collector screen 13 also extending over a rectangular area.
  • the zone E of the collector screen 13, as defined above, is located at the center where at the junction point of the cross formed by the strips 14a, 14b, 14c and 14d of its main branch 14.
  • collector screen 16 which is also made in a single layer of the semiconductor device 1.
  • This collector screen 16 comprises a main branch 17 which this time comprises only a longitudinal band 17a.
  • This collector screen 16 also comprises a plurality of secondary branches 18 which comprise opposite and spaced transverse strips 18a and 18b connected by one of their ends to the longitudinal strip 17a, so that this collector screen also has a tree structure which also extends over a rectangular area.
  • the zone E of the collector screen 13, as defined above, is located at half the length of the strip 17a constituting its main branch 17.
  • collector screen 19 has been shown which is also produced in a single layer of the semiconductor device 1.
  • This collector screen 19 comprises a main branch 20 which this time comprises a short longitudinal strip 20a and opposite transverse strips 20b and 20c which meet at the end of the longitudinal strip 20a.
  • This collector screen 19 also comprises a multiplicity of secondary branches 21 which comprise spaced longitudinal strips 21a connected by one of their ends to the transverse strip 20b, so that this collector screen also has a tree structure which also extends on a rectangular area.
  • the zone E of the collector screen 13, as defined above, is located in the center of this rectangular zone.
  • the antenna 22 shown in FIG. 7 comprises a first portion 23 constituted by a central square zone 24 and a longitudinal central strip 25 for connection to a circuit of the semiconductor component 1, as well as a second portion 26 constituted by a zone broad surrounding at a short distance the periphery of the central zone 24 and extending to near the longitudinal band 25.
  • the field of the antenna 22 is the strongest or the sensitivity of the latter is the strongest in the zone of the space separating its central zone 24 and its peripheral zone 26.
  • the zone A of the antenna 22, as defined above, is located in the center of the square zone 23.
  • the antenna 27 shown in FIG. 8 comprises a circular open ring 28, the ends of which are connected to middle longitudinal strips 29 and 30 close to one another and connected to a circuit of the semiconductor component 1.
  • the field of the antenna 27 is the strongest or the sensitivity of the latter is the strongest in the zone of the ring 28.
  • the zone A of the antenna 27, as defined above, is located at the center of the circular ring 28.
  • semiconductor devices can be made by associating any one of the collector screens 4, 13, 16 or 19 with any of the antennas 5, 22 or 27, by arranging them so that their zone E is located below their zone A.
  • the main branches of the collector screens are angularly or longitudinally offset relative to the zones of stronger fields or stronger antenna sensitivities.
  • the surfaces covered by the collector screens cover the surfaces of the antennas.
  • the materials used to make the strips constituting the collector screens described above have a conductivity of preferably between 0.1E7 and 6E7 S / m. They can advantageously be made of aluminum, tungsten or polysilicon. In a preferred variant, the main branches of collector screens are metallic and their secondary branches are polysilicon.
  • the materials used to make the antennas described above can be chosen from aluminum, copper, tungsten or gold.
  • These antennas can be calculated to have a range of a few centimeters to a few tens of meters and to transmit or receive radio signals on frequencies in particular greater than 2 Gigahertz

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Details Of Aerials (AREA)

Description

La présente invention concerne le domaine des dispositifs semi-conducteurs.The present invention relates to the field of semiconductor devices.

On sait réaliser des antennes émettrices/réceptrices de signaux radioélectriques sur des plaques de verre de façon à constituer des composants de petites tailles qui sont ensuite associés sur des plaques de connnexion à des composants à circuits intégrés ou directement fixés sur de tels circuits. De telles structures obligent à fabriquer d'une part des circuits intégrés et d'autre part des composants-antennes puis à les associer.Radio transmitting / receiving antennas of radio signals can be made on glass plates so as to constitute small components which are then associated on connection plates to integrated circuit components or directly fixed on such circuits. Such structures require the manufacture on the one hand of integrated circuits and on the other hand antenna components and then to associate them.

Le but de la présente invention est de proposer des composants à circuits intégrés qui intègrent aussi des antennes émettrices/réceptrices de signaux radioélectriques et qui sont tels que ces antennes soient de bonne qualité même lorsque les signaux radioélectriques sont à des fréquences élevées.The object of the present invention is to provide integrated circuit components which also incorporate radio transmitting / receiving antennas and which are such that these antennas are of good quality even when the radio signals are at high frequencies.

Le dispositif semi-conducteur selon l'invention comprend un substrat en particulier en silicium et des couches réalisées sur ce substrat dans au moins l'une desquelles est réalisée une antenne émettrice/réceptrice de signaux radioélectriques.The semiconductor device according to the invention comprises a substrate, in particular made of silicon, and layers formed on this substrate in at least one of which is formed an antenna transmitting / receiving radio signals.

Selon l'invention, le dispositif semi-conducteur comprend en outre, entre ladite antenne et ledit substrat, un écran collecteur de courants induits entre cette antenne et ce substrat, cet écran collecteur étant réalisé dans au moins une couche et comprenant au moins une branche principale reliée à un potentiel fixe, en particulier une masse, et des branches secondaires uniquement reliées à ladite branche principale par l'une de leurs extrémités de telle sorte que cet écran collecteur présente une structure arborescente.According to the invention, the semiconductor device further comprises, between said antenna and said substrate, a collector screen of currents induced between this antenna and this substrate, this collector screen being made in at least one layer and comprising at least one branch main connected to a fixed potential, in particular a mass, and secondary branches only connected to said main branch by one of their ends so that this collector screen has a tree structure.

Selon la présente invention, ledit écran collecteur est de préférence symétrique par rapport à un axe correspondant à l'axe de l'antenne.According to the present invention, said collector screen is preferably symmetrical with respect to an axis corresponding to the axis of the antenna.

Selon la présente invention, la branche principale dudit écran collecteur s'étend de préférence au moins en partie selon la bande d'entrée/sortie de l'antenne.According to the present invention, the main branch of said collector screen preferably extends at least in part according to the input / output band of the antenna.

Selon la présente invention, la branche principale dudit écran collecteur est décalée par rapport à la ou les zones dans lesquelles le champ de l'antenne est le plus fort ou la sensibilité de cette dernière est la plus forte.According to the present invention, the main branch of said collector screen is offset relative to the zone or zones in which the field of the antenna is the strongest or the sensitivity of the latter is the strongest.

La présente invention sera mieux comprise à l'étude de dispositifs semi-conducteurs intégrant des antennes émettrices/réceptrices de signaux radioélectriques, décrits à titre d'exemples non limitatifs et illustrés par le dessin sur lequel :

  • la figure 1 représente une coupe longitudinale d'un dispositif semi-conducteur selon l'invention, selon I-I de la figure 2 ;
  • la figure 2 représente une vue de dessus d'un écran collecteur selon l'invention ;
  • la figure 3 représente une vue de dessus d'une antenne ;
  • la figure 4 représente une vue de dessus d'un autre écran collecteur selon l'invention ;
  • la figure 5 représente une vue de dessus d'un autre écran collecteur selon l'invention ;
  • la figure 6 représente une vue de dessus d'un autre écran collecteur selon l'invention ;
  • la figure 7 représente une vue de dessus d'une autre antenne ;
  • et la figure 8 représente une vue .de dessus d'une autre antenne.
The present invention will be better understood in the study of semiconductor devices integrating radio signal transmitting / receiving antennas, described by way of nonlimiting examples and illustrated by the drawing in which:
  • Figure 1 shows a longitudinal section of a semiconductor device according to the invention, according to II of Figure 2;
  • FIG. 2 represents a view from above of a collector screen according to the invention;
  • FIG. 3 represents a view from above of an antenna;
  • FIG. 4 represents a view from above of another collector screen according to the invention;
  • FIG. 5 represents a view from above of another collector screen according to the invention;
  • FIG. 6 represents a view from above of another collector screen according to the invention;
  • Figure 7 shows a top view of another antenna;
  • and Figure 8 shows a view from above of another antenna.

En se reportant aux figures 1 à 3, on peut voir qu'on a représenté un dispositif semi-conducteur 1 qui comprend un substrat 2 en silicium sur lequel sont réalisées différentes couches 3 superposées.Referring to Figures 1 to 3, it can be seen that there is shown a semiconductor device 1 which comprises a silicon substrate 2 on which are formed different superimposed layers 3.

Dans des couches proches du substrat 2 est réalisé un écran collecteur 4 et dans une couche proche de la couche finale est réalisée une antenne 5 émettrice/réceptrice de signaux radioélectriques.In layers close to the substrate 2 is formed a collector screen 4 and in a layer near the final layer is carried a radio transmitting antenna / receiver of radio signals.

L'écran collecteur 4 est réalisé de la manière suivante.The collector screen 4 is made in the following manner.

Sur le substrat 2 est réalisée une couche 3a.On the substrate 2 is formed a layer 3a.

Dans une quatrième couche 3d, est réalisée une branche principale 6 qui comprend une bande longitudinale 6a et deux bandes 6b et 6c inclinées à 45° et symétriquement par rapport à la direction de la bande longitudinale 6a, de telle sorte que la bande longitudinale 6a et les deux bandes inclinées 6b et 6c forment un Y.In a fourth layer 3d, a main branch 6 is formed which comprises a longitudinal strip 6a and two strips 6b and 6c inclined at 45 ° and symmetrically with respect to the direction of the longitudinal strip 6a, so that the longitudinal strip 6a and the two inclined strips 6b and 6c form a Y.

Dans une deuxième couche 3b, est réalisée une multiplicité de branches secondaires 7 qui sont reliées par des vias 8 à la branche principale 6 et qui déterminent avec cette dernière une structure arborescente.In a second layer 3b, is realized a multiplicity of secondary branches 7 which are connected by vias 8 to the main branch 6 and which determine with the latter a tree structure.

Pour cela, cette multiplicité de branches secondaires 7 comprend une multiplicité de bandes transversales 7a et 7b qui s'étendent de part et d'autre de la bande longitudinale 6a de la branche principale 6 et se rejoignent sous cette bande 6a, des vias 8a reliant ces jonctions à la bande longitudinale 6a.For this, this multiplicity of secondary branches 7 comprises a multiplicity of transverse strips 7a and 7b which extend on either side of the longitudinal band 6a of the main branch 6 and meet under this band 6a, vias 8a connecting these junctions at the longitudinal band 6a.

La multiplicité de branches secondaires 7 comprend également une multiplicité des bandes transversales 7c qui s'étendent extérieurement à la zone située entre les deux bandes inclinées 6b et 6c de la branche principale 6 et une multiplicité de bandes longitudinales 7e qui s'étendent dans cette zone, telles que les bandes transversales 7c et les bandes longitudinales 7e forment des L et se rejoignent sous la bande 6b, des vias 8b reliant ces jonctions à la bande inclinée 6b.The multiplicity of secondary branches 7 also comprises a multiplicity of transverse strips 7c which extend outwardly to the zone situated between the two inclined strips 6b and 6c of the main branch 6 and a multiplicity of longitudinal strips 7e which extend in this zone. , such that the transverse strips 7c and the longitudinal strips 7e form L and join under the band 6b, vias 8b connecting these junctions to the inclined band 6b.

La multiplicité de branches secondaires 7 comprend en outre une multiplicité des bandes transversales 7d qui s'étendent extérieurement à la zone située entre les deux bandes inclinées 6b et 6c de la branche principale 6 et une multiplicité de bandes longitudinales 7f qui s'étendent dans cette zone, telles que les bandes transversales 7d et les bandes longitudinales 7f forment des L et se rejoignent sous la bande 6c, des vias 8c reliant ces jonctions à la bande inclinée 6b.The multiplicity of secondary branches 7 further comprises a multiplicity of transverse strips 7d which extend outwardly to the zone situated between the two inclined strips 6b and 6c of the main branch 6 and a multiplicity of longitudinal strips 7f which extend in this direction. zone, such that the transverse strips 7d and the longitudinal strips 7f form L and join under the band 6c, vias 8c connecting these junctions to the inclined band 6b.

Les bandes transversales 7a et 7c d'une part et les bandes transversales 7b et 7d d'autre part sont régulièrement réparties et les bandes longitudinales sont régulièrement espacées et sont uniquement reliées à la branche principale 6. Les longueurs de ces bandes sont telles qu'elles s'étendent sur une zone rectangulaire.The transverse strips 7a and 7c on the one hand and the transverse strips 7b and 7d on the other hand are evenly distributed and the longitudinal strips are evenly spaced and are only connected to the main branch 6. The lengths of these strips are such that they extend over a rectangular area.

Au-dessus de la couche 3d, est prévue une couche 3e dans laquelle est réalisé un via 9 connecté à la partie d'extrémité de la bande 6a de la branche principale 6 opposée à ses bandes 6b et 6c et, au-dessus de cette couche 3e, est prévue une couche 3f dans laquelle est réalisée une bande longitudinale 10 connectée au via 9.Above the layer 3d, there is provided a layer 3e in which a via 9 is made connected to the end portion of the strip 6a of the main branch 6 opposite its strips 6b and 6c and, above this layer 3, is provided a layer 3f in which is formed a longitudinal strip 10 connected to via 9.

Au-dessus de la couche 3f est prévue au moins une couche 3g.Above the layer 3f is provided at least one layer 3g.

Dans une avant dernière couche 3h est réalisée l'antenne 5 et au-dessus de cette couche 3h est prévue une dernière couche 3i de passivation.In a penultimate layer 3h is carried out the antenna 5 and above this layer 3h is provided a last layer 3i passivation.

Dans cet exemple, l'antenne 5, dipolaire, comprend deux brins 11 et 12 qui comprennent deux bandes longitudinales 11a et 12a qui sont proches l'une de l'autre et qui s'étendent parallèlement, au-dessus de la bande longitudinale 6a de l'écran collecteur 4, et deux bandes transversales 11b et 12b qui s'étendent à l'opposé l'une de l'autre.In this example, the dipole antenna 5 comprises two strands 11 and 12 which comprise two longitudinal strips 11a and 12a which are close to one another and which extend parallel to each other, above the longitudinal strip 6a. of the collector screen 4, and two transverse strips 11b and 12b which extend away from each other.

Les extrémités des branches 11a et 12a de l'antenne 5, opposées aux branches sont reliées à un composant intégré non représenté par des moyens non représentés, ce composant étant un émetteur de signal électrique lorsqu'il s'agit d'une antenne émettrice de signaux radioélectriques ou un récepteur de signal électrique lorsqu'il s'agit d'une antenne réceptrice de signaux radioélectriques.The ends of the branches 11a and 12a of the antenna 5, opposed to the branches are connected to an integrated component not shown by means not shown, this component being an electrical signal transmitter when it is a transmitting antenna. radio signals or an electrical signal receiver in the case of a radio-receiving antenna.

L'antenne 5 et l'écran collecteur 4 sont disposés l'un par rapport à l'autre de telle sorte que la zone de jonction A des bandes 11a, 11b et 12a, 12b de l'antenne 5 soit au-dessus de la zone de jonction E des bandes 6a, 6b et 6c de l'écran collecteur 4.The antenna 5 and the collector screen 4 are arranged relative to each other so that the junction zone A of the strips 11a, 11b and 12a, 12b of the antenna 5 is above the joining zone E of the strips 6a, 6b and 6c of the collector screen 4.

La longueur des bandes transversales 11b et 12b de l'antenne 5 est plus petite que la longueur des bandes tranversales 7a et 7b de l'écran collecteur 4, de telle sorte que l'antenne 5 est complétement recouverte par l'écran collecteur 4.The length of the transverse strips 11b and 12b of the antenna 5 is smaller than the length of the transverse strips 7a and 7b of the collector screen 4, so that the antenna 5 is completely covered by the collector screen 4.

Le champ de l'antenne 5 étant le plus fort ou la sensibilité de cette dernière étant la plus forte dans la zone des bandes alignées 11b et 11c, les bandes 6a, 6b et 6c constituant la branche principale 6 de l'écran collecteur 4 sont angulairement décalées par rapport aux bandes 11b et 12b de l'antenne 5, la bande 6a de 90° et les bandes 6b et 6c de 45°.Since the field of the antenna 5 is the strongest or the sensitivity of the latter being the strongest in the zone of the aligned bands 11b and 11c, the strips 6a, 6b and 6c constituting the main branch 6 of the collector screen 4 are angularly offset from the bands 11b and 12b of the antenna 5, the strip 6a of 90 ° and the bands 6b and 6c of 45 °.

Dans une variante, la bande longitudinale 10 de l'écran collecteur 4 se prolonge à l'opposé de la zone couverte par ce dernier de façon à être connectée à une autre partie du dispositif semi-conducteur 1 à un potentiel fixe tel qu'une masse.In a variant, the longitudinal strip 10 of the collector screen 4 extends opposite the zone covered by the latter so as to be connected to another part of the semiconductor device 1 at a fixed potential such that mass.

Dans une autre variante, cette branche longitudinale 10 pourrait être connectée à la masse de l'antenne 5 ou le via 9 pourrait être prolongé pour être connecté à la masse de l'antenne 5.In another variant, this longitudinal branch 10 could be connected to the ground of the antenna 5 or the via 9 could be extended to be connected to the ground of the antenna 5.

L'écran collecteur 4 a pour fonction de collecter les courants induits par couplage électrostatique entre l'antenne 5 et le substrat en silicium 2. Sa structure arborescente, qui présente en outre le même plan de symétrie que l'antenne 5 dans lequel l'écran collecteur 4 et l'antenne 5 présentent des axes longitudinaux de symétrie correspondants, évite que les courants induits ne circulent en boucle.The function of the collector screen 4 is to collect the currents induced by electrostatic coupling between the antenna 5 and the silicon substrate 2. Its arborescent structure, which furthermore has the same plane of symmetry as the antenna 5 in which the antenna 5 collector screen 4 and the antenna 5 have corresponding longitudinal axes of symmetry, prevents induced currents from circulating in a loop.

En se reportant aux figures 4 à 6, on va maintenant décrire différentes variantes de réalisation d'écrans collecteurs.Referring to Figures 4 to 6, we will now describe different embodiments of collector screens.

L'écran collecteur 13 représenté sur la figure 4 est réalisé, contrairement à l'exemple précédent, dans une seule couche du dispositif semi-conducteur 1, par exemple dans la couche 3b.The collector screen 13 shown in FIG. 4 is produced, in contrast to the preceding example, in a single layer of the semiconductor device 1, for example in the layer 3b.

Cet écran collecteur 13 comprend, comme l'écran collecteur 6, une branche principale 14 qui présente une bande longitudinale 14a et deux bandes inclinées 14b et 14c.This collector screen 13 comprises, like the collector screen 6, a main branch 14 which has a longitudinal strip 14a and two inclined strips 14b and 14c.

Cette branche principale 14 comprend en outre deux bandes 14d et 14e, inclinées à 45° et opposées aux bandes 14b et 14c, de telle sorte que les bandes 14a, 14b, 14c et 14d forment une croix.This main branch 14 further comprises two strips 14d and 14e, inclined at 45 ° and opposite the strips 14b and 14c, so that the strips 14a, 14b, 14c and 14d form a cross.

L'écran collecteur 13 comprend en outre une multiplicité de branches secondaires 15 associées aux bandes inclinées 14a, 14b, 14c et 14d et qui comprennent des bandes longitudinales 15a et des bandes transversales 15b qui, comme dans l'exemple précédent, constituent des L espacés.The collector screen 13 further comprises a multiplicity of secondary branches 15 associated with the inclined strips 14a, 14b, 14c and 14d and which comprise longitudinal strips 15a and transverse strips 15b which, as in the previous example, constitute spaced Ls. .

Ainsi, comme dans l'exemple précédent, l'écran collecteur 13 présente une structure arborescente dont les bandes 15a et 15b de ses branches secondaires 15 sont uniquement reliées aux bandes 14a, 14b, 14c et 14d de sa branche principale 14 par l'une de leurs extrémités, cet écran collecteur 13 s'étendant également sur une zone rectangulaire.Thus, as in the previous example, the collector screen 13 has a tree structure whose strips 15a and 15b of its secondary branches 15 are only connected to the strips 14a, 14b, 14c and 14d of its main branch 14 by one from their ends, this collector screen 13 also extending over a rectangular area.

Dans cet exemple, la zone E de l'écran collecteur 13, telle que définie précédemment, est située au centre où au point de jonction de la croix formée par les bandes 14a, 14b, 14c et 14d de sa branche principale 14.In this example, the zone E of the collector screen 13, as defined above, is located at the center where at the junction point of the cross formed by the strips 14a, 14b, 14c and 14d of its main branch 14.

En se reportant à la figure 5, on peut voir qu'on a représenté un écran collecteur 16 qui est également réalisé dans une seule couche du dispositif semi-conducteur 1.Referring to FIG. 5, it can be seen that there is shown a collector screen 16 which is also made in a single layer of the semiconductor device 1.

Cet écran collecteur 16 comprend une branche principale 17 qui cette fois comprend uniquement une bande longitudinale 17a.This collector screen 16 comprises a main branch 17 which this time comprises only a longitudinal band 17a.

Cet écran collecteur 16 comprend également une multiplicité de branches secondaires 18 qui comprennent des bandes transversales opposées et espacées 18a et 18b reliées par l'une des leurs extrémités à la bande longitudinale 17a, de telle sorte que cet écran collecteur présente également une structure arborescente qui s'étend également sur une zone rectangulaire.This collector screen 16 also comprises a plurality of secondary branches 18 which comprise opposite and spaced transverse strips 18a and 18b connected by one of their ends to the longitudinal strip 17a, so that this collector screen also has a tree structure which also extends over a rectangular area.

Dans cet exemple, la zone E de l'écran collecteur 13, telle que définie précédemment, est située à la moitié de la longueur de la bande 17a constituant sa branche principale 17.In this example, the zone E of the collector screen 13, as defined above, is located at half the length of the strip 17a constituting its main branch 17.

En se reportant à la figure 6, on peut voir qu'on a représenté un écran collecteur 19 qui est également réalisé dans une seule couche du dispositif semi-conducteur 1.With reference to FIG. 6, it can be seen that a collector screen 19 has been shown which is also produced in a single layer of the semiconductor device 1.

Cet écran collecteur 19 comprend une branche principale 20 qui cette fois comprend une courte bande longitudinale 20a et des bandes transversales opposées 20b et 20c qui se rejoignent à l'extrémité de la bande longitudinale 20a.This collector screen 19 comprises a main branch 20 which this time comprises a short longitudinal strip 20a and opposite transverse strips 20b and 20c which meet at the end of the longitudinal strip 20a.

Cet écran collecteur 19 comprend également une multiplicité de branches secondaires 21 qui comprennent des bandes longitudinales espacées 21a reliées par l'une de leurs extrémités à la bande transversale 20b, de telle sorte que cet écran collecteur présente aussi une structure arborescente qui s'étend également sur une zone rectangulaire.This collector screen 19 also comprises a multiplicity of secondary branches 21 which comprise spaced longitudinal strips 21a connected by one of their ends to the transverse strip 20b, so that this collector screen also has a tree structure which also extends on a rectangular area.

Dans cet exemple, la zone E de l'écran collecteur 13, telle que définie précédemment, est située au centre de cette zone rectangulaire.In this example, the zone E of the collector screen 13, as defined above, is located in the center of this rectangular zone.

En se reportant aux figures 7 et 8, on va maintenant décrire différentes variantes de réalisation d'antennes émettrices/réceptrices.Referring to FIGS. 7 and 8, different embodiments of transmitting / receiving antennas will now be described.

L'antenne 22 représentée sur la figure 7 comprend une première partie 23 constituée par une zone carrée centrale 24 et une bande longitudinale médiane 25 de connexion à un circuit du composant semi-conducteur 1, ainsi qu'une seconde partie 26 constituée par une zone large entourant à faible distance la périphérie de la zone centrale 24 et s'étendant jusqu'à proximité de la bande longitudinale 25.The antenna 22 shown in FIG. 7 comprises a first portion 23 constituted by a central square zone 24 and a longitudinal central strip 25 for connection to a circuit of the semiconductor component 1, as well as a second portion 26 constituted by a zone broad surrounding at a short distance the periphery of the central zone 24 and extending to near the longitudinal band 25.

Le champ de l'antenne 22 est le plus fort ou la sensibilité de cette dernière est la plus forte dans la zone de l'espace séparant sa zone centrale 24 et sa zone périphérique 26.The field of the antenna 22 is the strongest or the sensitivity of the latter is the strongest in the zone of the space separating its central zone 24 and its peripheral zone 26.

Dans cet exemple, la zone A de l'antenne 22, telle que définie précédemment, est située au centre de la zone carrée 23.In this example, the zone A of the antenna 22, as defined above, is located in the center of the square zone 23.

L'antenne 27 représentée sur la figure 8 comprend un anneau ouvert circulaire 28, dont les extrémités sont reliées à des bandes longitudinales médianes 29 et 30 proches l'une de l'autre et de connexion à un circuit du composant semi-conducteur 1.The antenna 27 shown in FIG. 8 comprises a circular open ring 28, the ends of which are connected to middle longitudinal strips 29 and 30 close to one another and connected to a circuit of the semiconductor component 1.

Le champ de l'antenne 27 est le plus fort ou la sensibilité de cette dernière est la plus forte dans la zone de l'anneau 28.The field of the antenna 27 is the strongest or the sensitivity of the latter is the strongest in the zone of the ring 28.

Dans cet exemple, la zone A de l'antenne 27, telle que définie précédemment, est située au centre de l'anneau circulaire 28.In this example, the zone A of the antenna 27, as defined above, is located at the center of the circular ring 28.

Il résulte de ce qui précède que l'on peut réaliser des dispositifs semi-conducteurs en associant l'un quelconque des écrans collecteurs 4, 13, 16 ou 19 à l'une quelconque des antennes 5, 22 ou 27, en les disposant de telle sorte que leur zone E soit située au-dessous de leur zone A. Ainsi, les branches principales des écrans collecteurs sont décalées angulairement ou longitudinalement par rapport aux zones de plus forts champs ou de plus fortes sensibilités des antennes.It follows from the foregoing that semiconductor devices can be made by associating any one of the collector screens 4, 13, 16 or 19 with any of the antennas 5, 22 or 27, by arranging them so that their zone E is located below their zone A. Thus, the main branches of the collector screens are angularly or longitudinally offset relative to the zones of stronger fields or stronger antenna sensitivities.

En outre, les surfaces couvertes par les écrans collecteurs couvrent les surfaces des antennes.In addition, the surfaces covered by the collector screens cover the surfaces of the antennas.

Par ailleurs, les matériaux utilisés pour réaliser les bandes constituant les écrans collecteurs décrits précédemment présentent une conductivité comprise de préférence entre 0,1E7 et 6E7 S/m. On peut avantageusement les réaliser en aluminium, en tungstène ou en polysilicium. Dans une variante préférée, les branches principales des écrans collecteurs sont métalliques et leurs branches secondaires sont en polysilicium.Moreover, the materials used to make the strips constituting the collector screens described above have a conductivity of preferably between 0.1E7 and 6E7 S / m. They can advantageously be made of aluminum, tungsten or polysilicon. In a preferred variant, the main branches of collector screens are metallic and their secondary branches are polysilicon.

Les matériaux utilisés pour réaliser les antennes décrites précédemment peuvent être choisis parmi l'aluminium, le cuivre, le tungstène ou l'or.The materials used to make the antennas described above can be chosen from aluminum, copper, tungsten or gold.

Ces antennes peuvent être calculées pour présenter une portée de quelques centimètres à quelques dizaines de mètres et pour émettre ou recevoir des signaux radioélectriques sur des fréquences en particulier supérieures à 2 gigahertzThese antennas can be calculated to have a range of a few centimeters to a few tens of meters and to transmit or receive radio signals on frequencies in particular greater than 2 Gigahertz

La présente invention ne se limite pas aux exemples ci-dessus décrits. Bien des variantes de réalisation sont possibles, notamment en ce qui concerne la structure arborescente des écrans collecteurs ou la structure des antennes et leurs réalisations dans une ou plusieurs couches, sans sortir du cadre défini par les revendications annexées.The present invention is not limited to the examples described above. Many alternative embodiments are possible, especially with regard to the tree structure of the collector screens or the antenna structure and their embodiments in one or more layers, without departing from the scope defined by the appended claims.

Claims (4)

  1. Semiconductor device comprising a substrate, in particular made of silicon, and layers, deposited on this substrate, within at least one of which a radio signal transmission/reception antenna is formed, characterized in that it also comprises, between the said antenna (5) and the said substrate (2), a screen (4) for collecting currents induced between this antenna and this substrate, this collector screen being formed within at least one layer and comprising at least one main branch (6) connected to a fixed potential, in particular a ground, and secondary branches (7) connected to the said main branch by only one of their extremities such that this collector screen presents a tree-like structure.
  2. Device according to Claim 1, where the antenna is symmetrical with respect to an axis, characterized in that the said collector screen (4) is symmetrical with respect to an axis corresponding to the axis of the antenna (4).
  3. Device according to either one of Claims 1 and 2, characterized in that the main' branch (6) of the said collector screen (4) extends, in part at least, along the input/output strip of the antenna (5).
  4. Device according to any one of the preceding claims, characterized in that the main branch (6) of the said collector screen (4) is displaced with respect to the region or regions in which the field of the antenna (5) is highest or the sensitivity of the latter is highest.
EP05290458A 2004-03-16 2005-03-02 Semiconductor device with antenna and collecting screen Expired - Fee Related EP1580837B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0402710 2004-03-16
FR0402710A FR2867899A1 (en) 2004-03-16 2004-03-16 SEMICONDUCTOR DEVICE WITH ANTENNA AND COLLECTION SCREEN

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EP1580837A1 EP1580837A1 (en) 2005-09-28
EP1580837B1 true EP1580837B1 (en) 2007-06-06

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EP (1) EP1580837B1 (en)
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FR2878081B1 (en) * 2004-11-17 2009-03-06 France Telecom METHOD OF MAKING ANTENNAS INTEGRATED ON CHIP HAVING IMPROVED RADIATION EFFICIENCY
KR20080106354A (en) * 2006-03-17 2008-12-04 엔엑스피 비 브이 Antenna device and rf communication equipment
FR2963704A1 (en) * 2010-08-05 2012-02-10 St Microelectronics Crolles 2 PHOTOVOLTAIC CELL AND AUTONOMOUS SENSOR
TWI568079B (en) * 2015-07-17 2017-01-21 緯創資通股份有限公司 Antenna array
US9837453B1 (en) * 2016-09-09 2017-12-05 International Business Machines Corporation Self-sufficient chip with photovoltaic power supply on back of wafer

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US4654622A (en) * 1985-09-30 1987-03-31 Honeywell Inc. Monolithic integrated dual mode IR/mm-wave focal plane sensor
JPH02214205A (en) * 1989-02-14 1990-08-27 Fujitsu Ltd Electronic circuit device
JP2840493B2 (en) * 1991-12-27 1998-12-24 株式会社日立製作所 Integrated microwave circuit
US5386215A (en) * 1992-11-20 1995-01-31 Massachusetts Institute Of Technology Highly efficient planar antenna on a periodic dielectric structure
JP3141692B2 (en) * 1994-08-11 2001-03-05 松下電器産業株式会社 Millimeter wave detector
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EP1580837A1 (en) 2005-09-28
US20050206576A1 (en) 2005-09-22
FR2867899A1 (en) 2005-09-23
DE602005001282D1 (en) 2007-07-19
US7180450B2 (en) 2007-02-20

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