EP1566867A3 - Halbleiterlaserbauteil auf Substrat mit verkippter Kristallorientierung - Google Patents

Halbleiterlaserbauteil auf Substrat mit verkippter Kristallorientierung Download PDF

Info

Publication number
EP1566867A3
EP1566867A3 EP05003155A EP05003155A EP1566867A3 EP 1566867 A3 EP1566867 A3 EP 1566867A3 EP 05003155 A EP05003155 A EP 05003155A EP 05003155 A EP05003155 A EP 05003155A EP 1566867 A3 EP1566867 A3 EP 1566867A3
Authority
EP
European Patent Office
Prior art keywords
crystal orientation
semiconductor laser
laser element
substrate
element formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05003155A
Other languages
English (en)
French (fr)
Other versions
EP1566867A2 (de
Inventor
Tsuyoshi c/o Fuji Photo Film Co. Ltd. Ohgoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Publication of EP1566867A2 publication Critical patent/EP1566867A2/de
Publication of EP1566867A3 publication Critical patent/EP1566867A3/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
EP05003155A 2004-02-19 2005-02-15 Halbleiterlaserbauteil auf Substrat mit verkippter Kristallorientierung Withdrawn EP1566867A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004043135A JP2005236024A (ja) 2004-02-19 2004-02-19 半導体レーザ素子
JP2004043135 2004-02-19

Publications (2)

Publication Number Publication Date
EP1566867A2 EP1566867A2 (de) 2005-08-24
EP1566867A3 true EP1566867A3 (de) 2006-03-22

Family

ID=34709122

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05003155A Withdrawn EP1566867A3 (de) 2004-02-19 2005-02-15 Halbleiterlaserbauteil auf Substrat mit verkippter Kristallorientierung

Country Status (3)

Country Link
US (1) US7366216B2 (de)
EP (1) EP1566867A3 (de)
JP (1) JP2005236024A (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006245341A (ja) * 2005-03-03 2006-09-14 Mitsubishi Electric Corp 半導体光素子
JP4475357B1 (ja) 2009-06-17 2010-06-09 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
JP5206699B2 (ja) 2010-01-18 2013-06-12 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
US7903711B1 (en) * 2009-11-13 2011-03-08 Coherent, Inc. Separate confinement heterostructure with asymmetric structure and composition
US9484211B2 (en) 2013-01-24 2016-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Etchant and etching process

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0325275A2 (de) * 1988-01-20 1989-07-26 Nec Corporation Sichtbares Licht ausstrahlender Halbleiterlaser mit (AlxGa1-x)0.5In0.5P-Kristallschichten und Verfahren zum Züchten eines (AlxGa1-x)0.5In0.5P-Kristalls
US5157679A (en) * 1989-10-11 1992-10-20 Hitachi-Ltd. Optoelectronic devices
US5717709A (en) * 1993-06-04 1998-02-10 Sharp Kabushiki Kaisha Semiconductor light-emitting device capable of having good stability in fundamental mode of oscillation, decreasing current leakage, and lowering oscillation threshold limit, and method of making the same
US6219365B1 (en) * 1998-11-03 2001-04-17 Wisconsin Alumni Research Foundation High performance aluminum free active region semiconductor lasers
US6356572B1 (en) * 1998-03-19 2002-03-12 Hitachi, Ltd. Semiconductor light emitting device
EP1187277A2 (de) * 2000-09-04 2002-03-13 Fujitsu Quantum Devices Limited Diodenlaser und zugehöriges Herstellungsverfahren

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0533197A3 (en) * 1991-09-20 1993-11-03 Fujitsu Ltd Stripe laser diode having an improved efficiency for current confinement
JPH05160515A (ja) * 1991-12-04 1993-06-25 Eastman Kodak Japan Kk 量子井戸型レーザダイオード
US5684818A (en) * 1993-12-28 1997-11-04 Fujitsu Limited Stepped substrate semiconductor laser for emitting light at slant portion
US5465266A (en) * 1994-06-28 1995-11-07 Xerox Corporation Index-guided laser on a ridged (001) substrate
EP0872925B1 (de) * 1995-09-29 2002-04-03 Matsushita Electric Industrial Co., Ltd. Halbleiterlaser und optisches plattenspeichergerät unter verwendung dieses lasers
US5881086A (en) * 1995-10-19 1999-03-09 Canon Kabushiki Kaisha Optical semiconductor device with quantum wires, fabrication method thereof, and light source apparatus, and optical communication system using the same
JPH1075009A (ja) * 1996-08-30 1998-03-17 Nec Corp 光半導体装置とその製造方法
US6639926B1 (en) * 1998-03-25 2003-10-28 Mitsubishi Chemical Corporation Semiconductor light-emitting device
US6614059B1 (en) * 1999-01-07 2003-09-02 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device with quantum well
GB2351390A (en) * 1999-06-16 2000-12-27 Sharp Kk A semiconductor material comprising two dopants

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0325275A2 (de) * 1988-01-20 1989-07-26 Nec Corporation Sichtbares Licht ausstrahlender Halbleiterlaser mit (AlxGa1-x)0.5In0.5P-Kristallschichten und Verfahren zum Züchten eines (AlxGa1-x)0.5In0.5P-Kristalls
US5157679A (en) * 1989-10-11 1992-10-20 Hitachi-Ltd. Optoelectronic devices
US5717709A (en) * 1993-06-04 1998-02-10 Sharp Kabushiki Kaisha Semiconductor light-emitting device capable of having good stability in fundamental mode of oscillation, decreasing current leakage, and lowering oscillation threshold limit, and method of making the same
US6356572B1 (en) * 1998-03-19 2002-03-12 Hitachi, Ltd. Semiconductor light emitting device
US6219365B1 (en) * 1998-11-03 2001-04-17 Wisconsin Alumni Research Foundation High performance aluminum free active region semiconductor lasers
EP1187277A2 (de) * 2000-09-04 2002-03-13 Fujitsu Quantum Devices Limited Diodenlaser und zugehöriges Herstellungsverfahren

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
EARLES T ET AL: "Narrow spectral width (<1 A FWHM) 1.1-W cw operation from 100-[mu]m stripe DFB diode lasers ([lambda]=0.893 [mu]m) with Al-free optical-confinement region", TECHNICAL DIGEST. SUMMARIES OF PAPERS PRESENTED AT THE CONFERENCE ON LASERS AND ELECTRO-OPTICS. CONFERENCE EDITION. 1998 TECHNICAL DIGEST SERIES, VOL.6 (IEEE CAT. NO.98CH36178) OPT. SOC. AMERICA WASHINGTON, DC, USA, 1998, pages 38 - 39, XP002363362, ISBN: 1-55752-339-0 *
HAYAKAWA T: "High reliability and facet temperature reduction in high-power 0.8-[mu]m Al-free active-region diode lasers", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG USA, vol. 4287, 2001, pages 103 - 110, XP002363361, ISSN: 0277-786X *
KONDO M ET AL: "CRYSTAL ORIENTATION DEPENDENCE OF IMPURITY DOPANT INCORPORATION IN MOVPE-GROWN III-V MATERIALS", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 124, no. 1/4, 1 November 1992 (1992-11-01), pages 449 - 456, XP000411809, ISSN: 0022-0248 *

Also Published As

Publication number Publication date
US7366216B2 (en) 2008-04-29
US20050185687A1 (en) 2005-08-25
EP1566867A2 (de) 2005-08-24
JP2005236024A (ja) 2005-09-02

Similar Documents

Publication Publication Date Title
US7648891B2 (en) Semiconductor chip shape alteration
EP3065186A3 (de) Lichtemittierendes halbleiterbauelement und verfahren zu seiner herstellung
ATE418806T1 (de) Nitrid-halbleiterlaservorrichtung
JP2008028391A5 (de)
EP1418631A3 (de) Optisches Halbleiterbauelement mit einer Strombegrenzungsstruktur
EP1699091A3 (de) Halbleiter LED Kombinationsbauelement
UA96589C2 (ru) Прокладка для лопатки турбины
JP2011071180A5 (de)
DE69923246D1 (de) Hartes Sinterkörper-Werkzeug
US20100237382A1 (en) Semiconductor light emitting element, semiconductor light emitting device using the element, and method for manufacturing the device
EP1895601A3 (de) Nitridhalbleiterkristall mit Oberflächentextur
EP1589592A3 (de) Lichtemittierende Halbleiter-Vorrichtung mit entlang einer Kristall-Ebene ausgerichteten lichtemittierenden Schichten
EP1724846A3 (de) Leuchtdiode, integrierte Leuchtdiode und deren Herstellungsverfahren, Wachstumsverfahren für einen Nitrid-basierten III-V Halbleiter, Lichtquelleneinheit, Rücklichtleuchtdiode, lichtemittierende Diodenanzeige und ein elektronisches Gerät
EP2224479A3 (de) Metall-Keramik-Verbundsubstrat und Verfahren zu seiner Herstellung
CN1599955A (zh) 用于与散热器有效热接触的、微电子管芯侧面上的背面金属化
EP1286439A3 (de) Optische Halbleitervorrichtung und Herstellungsverfahren
AU2002252197A1 (en) Separating of optical integrated modules and structures formed thereby
TWI266435B (en) Nitride-based compound semiconductor light emitting device and fabricating method thereof
TW200507018A (en) Semiconductor device and manufacturing method thereof
USD480086S1 (en) Computer workstation
EP1930944A3 (de) An einem Wafer angebrachte thermomechanische Schnittstelle
JP2003198043A5 (de)
EP1308283A3 (de) Druckkopf mit einer Dünnfilmmembran mit einem schwebenden Teil
EP1519641A3 (de) Modul und Verfahren zur Herstellung eines Modus
EP1566867A3 (de) Halbleiterlaserbauteil auf Substrat mit verkippter Kristallorientierung

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR LV MK YU

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR LV MK YU

AKX Designation fees paid
RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: FUJIFILM CORPORATION

REG Reference to a national code

Ref country code: DE

Ref legal event code: 8566

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20060923