EP1547160A1 - Spektral mit metallkalkogenidnanopartikeln sensibilisierter nanoporöser metalloxidhalbleiter - Google Patents

Spektral mit metallkalkogenidnanopartikeln sensibilisierter nanoporöser metalloxidhalbleiter

Info

Publication number
EP1547160A1
EP1547160A1 EP03787809A EP03787809A EP1547160A1 EP 1547160 A1 EP1547160 A1 EP 1547160A1 EP 03787809 A EP03787809 A EP 03787809A EP 03787809 A EP03787809 A EP 03787809A EP 1547160 A1 EP1547160 A1 EP 1547160A1
Authority
EP
European Patent Office
Prior art keywords
nano
metal oxide
chalcogenide
porous metal
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03787809A
Other languages
English (en)
French (fr)
Inventor
Hieronymus AGFA-GEVAERT ANDRIESSEN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agfa Gevaert NV
Agfa Gevaert AG
Original Assignee
Agfa Gevaert NV
Agfa Gevaert AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agfa Gevaert NV, Agfa Gevaert AG filed Critical Agfa Gevaert NV
Priority to EP03787809A priority Critical patent/EP1547160A1/de
Publication of EP1547160A1 publication Critical patent/EP1547160A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
    • H01M14/005—Photoelectrochemical storage cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

Definitions

  • EP-A 1 176 646 further includes an example for making a layered heterojunction in which Sn ⁇ 2 ⁇ coated glass was coated with a compact Ti ⁇ 2 layer by spray pyrolysis, PbS quantum dots were deposited upon the Ti ⁇ 2 layer, the hole conductor 2, 2', 7,7'- tetrakis (N, N-di-p-methoxyphenyl-amine) 9, 9' -spirobifluorene (OMeTAD) was deposited on the quantum dots and a semitransparent gold back contact was evaporated on the OMeTAD layer.
  • OLED hole conductor 2', 7,7'- tetrakis (N, N-di-p-methoxyphenyl-amine) 9, 9' -spirobifluorene

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Hybrid Cells (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Photovoltaic Devices (AREA)
EP03787809A 2002-08-13 2003-07-29 Spektral mit metallkalkogenidnanopartikeln sensibilisierter nanoporöser metalloxidhalbleiter Withdrawn EP1547160A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP03787809A EP1547160A1 (de) 2002-08-13 2003-07-29 Spektral mit metallkalkogenidnanopartikeln sensibilisierter nanoporöser metalloxidhalbleiter

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP02102130 2002-08-13
EP02102130 2002-08-13
PCT/EP2003/050346 WO2004017427A1 (en) 2002-08-13 2003-07-29 Nano-porous metal oxide semiconductor spectrally sensitized with metal chalcogenide nano-particles
EP03787809A EP1547160A1 (de) 2002-08-13 2003-07-29 Spektral mit metallkalkogenidnanopartikeln sensibilisierter nanoporöser metalloxidhalbleiter

Publications (1)

Publication Number Publication Date
EP1547160A1 true EP1547160A1 (de) 2005-06-29

Family

ID=31725483

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03787809A Withdrawn EP1547160A1 (de) 2002-08-13 2003-07-29 Spektral mit metallkalkogenidnanopartikeln sensibilisierter nanoporöser metalloxidhalbleiter

Country Status (4)

Country Link
EP (1) EP1547160A1 (de)
JP (1) JP2006501640A (de)
AU (1) AU2003262550A1 (de)
WO (1) WO2004017427A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200802903A (en) * 2006-02-16 2008-01-01 Solexant Corp Nanoparticle sensitized nanostructured solar cells
US9382474B2 (en) 2010-04-06 2016-07-05 The Governing Council Of The University Of Toronto Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles
KR101462020B1 (ko) * 2013-11-29 2014-11-19 한국화학연구원 칼코젠화합물 광흡수체 기반 고효율 무／유기 하이브리드 태양전지 제조 방법
FR3019540A1 (fr) * 2014-04-04 2015-10-09 Rhodia Operations Oxydes et sulfures mixtes de bismuth et argent pour application photovoltaique

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1176646A1 (de) * 2000-07-28 2002-01-30 Ecole Polytechnique Féderale de Lausanne (EPFL) Festkörper-Heteroübergang und sensibilisierte Festkörper photovoltaische Zelle

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2004017427A1 *

Also Published As

Publication number Publication date
JP2006501640A (ja) 2006-01-12
AU2003262550A1 (en) 2004-03-03
WO2004017427A1 (en) 2004-02-26

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