EP1524511B1 - Procédé de détection de fuite et ensemble à dispositif micro-usiné - Google Patents

Procédé de détection de fuite et ensemble à dispositif micro-usiné Download PDF

Info

Publication number
EP1524511B1
EP1524511B1 EP04077771A EP04077771A EP1524511B1 EP 1524511 B1 EP1524511 B1 EP 1524511B1 EP 04077771 A EP04077771 A EP 04077771A EP 04077771 A EP04077771 A EP 04077771A EP 1524511 B1 EP1524511 B1 EP 1524511B1
Authority
EP
European Patent Office
Prior art keywords
reservoir
junction diode
cavity
wafer
device assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
Application number
EP04077771A
Other languages
German (de)
English (en)
Other versions
EP1524511A3 (fr
EP1524511A2 (fr
Inventor
John C. Christenson
David B. Rich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Delphi Technologies Inc
Original Assignee
Delphi Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Delphi Technologies Inc filed Critical Delphi Technologies Inc
Publication of EP1524511A2 publication Critical patent/EP1524511A2/fr
Publication of EP1524511A3 publication Critical patent/EP1524511A3/fr
Application granted granted Critical
Publication of EP1524511B1 publication Critical patent/EP1524511B1/fr
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M3/00—Investigating fluid-tightness of structures
    • G01M3/40—Investigating fluid-tightness of structures by using electric means, e.g. by observing electric discharges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M3/00—Investigating fluid-tightness of structures
    • G01M3/02—Investigating fluid-tightness of structures by using fluid or vacuum
    • G01M3/04—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point
    • G01M3/16—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using electric detection means
    • G01M3/18—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using electric detection means for pipes, cables or tubes; for pipe joints or seals; for valves; for welds; for containers, e.g. radiators
    • G01M3/186—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using electric detection means for pipes, cables or tubes; for pipe joints or seals; for valves; for welds; for containers, e.g. radiators for containers, e.g. radiators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M3/00—Investigating fluid-tightness of structures
    • G01M3/02—Investigating fluid-tightness of structures by using fluid or vacuum
    • G01M3/04—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point
    • G01M3/20—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using special tracer materials, e.g. dye, fluorescent material, radioactive material
    • G01M3/22—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using special tracer materials, e.g. dye, fluorescent material, radioactive material for pipes, cables or tubes; for pipe joints or seals; for valves; for welds; for containers, e.g. radiators
    • G01M3/226—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using special tracer materials, e.g. dye, fluorescent material, radioactive material for pipes, cables or tubes; for pipe joints or seals; for valves; for welds; for containers, e.g. radiators for containers, e.g. radiators

Definitions

  • the present invention relates to a method for detecting leaks in a cavity such as that between semiconductor wafers. More particularly, this invention relates to an electrical verification technique and device for detecting a leak within a cavity enclosing a micro-machined sensing structure.
  • MEMS micro-electrical-mechanical systems
  • yaw angular rate sensors
  • accelerometers and pressure sensors
  • a cap referred to as capping wafer
  • Moisture can cause micro-machine surfaces of the sensor elements to permanently adhere to each other, or form ice crystal at low temperatures, thus preventing proper translation in response to mechanical stimuli. Further, materials common to packaging, including protective, stress relieving, or dielectric gels, can be wicked into the voids during the packaging of the sensor and interfere with sensor operation. This can render the sensor inoperable.
  • U.S. Patent No. 6,074,891 assigned to the assignee of the present invention, the disclosure of which is explicitly incorporated by reference, discloses an electrical verification technique and semiconductor device that detects moisture within the cavity as an indication of whether the sensing structure is hermetically sealed within the cavity.
  • the technique employs a bare, unpassivated PN junction diode in a semiconductor substrate.
  • the reverse diode characteristics of the PN junction diode are then determined by causing a reverse current to flow through the diode. For this purpose, either a known voltage is applied across the diode and the reverse leakage current measured, or a known reverse current is forced through the diode and the voltage measured.
  • the unpassivated junction diode exhibits measurable current/voltage instability, if sufficient moisture is present within the cavity, indicating that the cavity is not hermetically sealed.
  • any device that is not hermetically sealed may be detected electronically if sufficient moisture is present within the cavity of the device. It was found that sufficient moisture normally requires water vapor of greater than about 50% relative humidity. At his level, the moisture would cause measurable instability in the diode. However, in high volume testing conditions, staging wafers in air of variable humidity occasionally allows leaky devices to escape.
  • the present invention involves an electrical verification method that detects moisture within the cavity of the semiconductor or micro-machined device as an indication of whether the device is hermetically sealed.
  • the method affects an increase in the time for sufficient water vapor to remain within a leaky or unsealed device, so that instability in the diode can be measurable over a longer period of time.
  • the method involves the steps of: (a) providing a device wafer and a capping wafer; (b) forming at least one reservoir in at least one of the wafers, the at least one reservoir having at least one reservoir port; (c) forming a PN junction diode adjacent to the at least one reservoir port; (d) bonding the device wafer with the capping wafer, and forming a cavity therebetween, the PN junction diode and the at least one reservoir port enclosed within the cavity; (e) causing a reverse current to flow through the PN junction diode; and (f) measuring the reverse current or voltage caused by the reverse current as an indication of the presence of moisture within the cavity.
  • each reservoir may include at least one diffusion channel connecting the at least one reservoir to the at least one reservoir port, which is in communication with the cavity.
  • the at least one reservoir and the at least one diffusion channel may be formed in a sub-surface of either wafer.
  • the PN junction diode may be of any advantageous shape, including linear, segmented, bent, curve, oval, or circular, and may be surrounding the reservoir port.
  • the method includes forcing a liquid through a gap between the bonded wafers, and retaining moisture in the at least one reservoir or the at least one diffusion channel, and causing a reverse current to flow through the PN junction diode. Subsequently, the voltage is measured as an indication of the presence of moisture within the cavity.
  • an electric potential or voltage is applied across the PN junction diode, and the reverse current is measured as an indication of the presence of moisture within the cavity.
  • the method may include the step of forming a sensor element on the device wafer prior to bonding the device wafer to the capping wafer.
  • the bonding step may be performed by a method including silicon direct bonding, anodic bonding and glass frit bonding.
  • a micro-machined device assembly which includes a sensor element, is provided.
  • the device assembly comprises a device wafer, a capping wafer bonded on the device wafer forming a cavity therebetween, at least one exposed PN junction diode disposed on a surface of either the device wafer or the capping wafer.
  • the device assembly further includes at least one reservoir for receiving a liquid and retaining moisture, and at least a pair of metal pads. One of the metal pads is disposed at a P region and the other is disposed at an N region of the PN junction diode.
  • the at least one reservoir of the device assembly may include a diffusion channel connecting the at least one reservoir to at least one reservoir port in communication with the cavity.
  • the PN junction diode may be of any advantageous shape, including linear, segmented, curve, oval or circular, and may be disposed adjacent to or surrounding the at least one reservoir port.
  • the method of the present invention employs a reverse current to flow through an exposed, unpassivated, PN junction diode in a semiconductor substrate, and a determination of an instable reverse current, similar to what described in U.S. Patent No. 6,074,891 , herein fully incorporated by reference.
  • the method is based on the discovery that when wet or when exposed to an environment that has a relative humidity greater than about 50%, the unpassivated junction diode characteristics show measurable instability. Once dry, however, the junction diode's characteristics return to normal, and dry but leaky devices are not detected.
  • the method of the present invention assures measurable humidity levels remaining in the cavity so that the junction diode can electrically identify leaky devices.
  • Figure 1 represents a semiconductor sensor or a micro-machined device in accordance with this invention.
  • Device 10 in Figure 1 is formed by bonding device wafer 11 to capping wafer 12, such that sensing element 14 is enclosed within cavity 16, between wafers 11 and 12.
  • Cavity 16 should be hermetically sealed, and optionally in a vacuum.
  • Wafers 11 and 12 may be made of silicon, and device wafer 11 may be made of monocrystallographic silicon. It is contemplated that other materials may also be used.
  • the capping wafer 12 may be formed of glass, ceramic, or another semiconducting material.
  • Sensor element 14 may be of any suitable type, including resonating structures, diaphragms and cantilevers that rely on capacitive, piezoresistive and piezoelectric sensing elements to sense motion, pressure, etc., all of which are known in the art.
  • sensor element 14 is electrically interconnected to metal bond pads 24 disposed outside capping wafer 12 (see Figures 1 and 2 ) on device wafer 11 by conductive runners 22. Sensor element 14 may rest over void 38 (see Figure 3 ). Runners 22 may run beneath bonding material 18 (see Figures 1 and 2 ). Bonding material 18, such as a glass frit, is applied between the mating surfaces of device wafer 11 and capping wafer 12.
  • the invention may employ silicon direct bonding (SDB) methods, such as silicon fusion bonding (SFB), by which device wafer 11 and capping wafer 12 are bonded without intermediate bond, alloy and adhesive films.
  • SDB silicon direct bonding
  • SFB silicon fusion bonding
  • sensor element 14 and its associated sensing elements may be electrically interconnected with appropriate signal conditioning circuitry that may be formed on device wafer 11, capping wafer 12 or a separate device.
  • device wafer 11 is provided with reservoir 30 disposed in a sub-surface of device wafer 11.
  • Reservoir 30 includes diffusion channel 31 connecting reservoir 30 to reservoir port 32, which is open into cavity 16 of device 10.
  • each reservoir may have multiple diffusion channels connected to a plurality of reservoir ports. It is also contemplated that the reservoirs may be configured to be of varying sizes and shapes as long as they fit in the sub-surface of device wafer 11.
  • the reservoirs are designed for receiving and retaining liquid or moisture passing through from cavity 16 through the reservoir ports and the diffusion channels.
  • the diffusion channels may be elongated capillary tubes that can restrict the liquid movement from the reservoir(s) to the reservoir port(s), thus increase the length of time the leak can be detected.
  • the reservoirs and diffusion channels may be formed by any standard procedure known in the art for forming channels in wafers. As demonstrated in Figure 3 , for example, device wafer 11 may be etched by a wet or dry etch process, prior to applying oxide coating 35, or other coating material known in the art. Single crystal silicon epitaxial layer 36 may be placed over reservoir 30 and diffusion channel 31. An opening for reservoir port 32 may be formed within layer 36. Any suitable method for forming a reservoir port may be used. An example of such method is Deep Reactive Ion Etching (DRIE).
  • DRIE Deep Reactive Ion Etching
  • PN junction diode 40 is positioned on the surface of device wafer 11 at a close proximity to reservoir port 32. As shown in Figure 2 , PN junction diode 40 forms a substantially circular shape surrounding reservoir port 32 at an advantageous distance from the reservoir port 32.
  • PN junction diode 40 requires contiguous P-type and N-type regions, such as the P-type implant 41 formed in an N-type epitaxial layer 36 on the device wafer 11 as shown in Figure. 3 .
  • PN junction diode 40 is exposed, or unpassivated, having no protective coating (e.g., one or more thermal oxide or nitride layers).
  • passivation layer 37 that protects the surface of the device wafer 11 within cavity 16 does not cover or protect PN junction diode 40. Without such protection, the presence of moisture in cavity 16 may degrade the junction characteristics of PN junction diode 40.
  • Metal runner 46 is provided to interconnect P-type region 41 of diode 40 with metal bond pad 48 on device wafer 11 outside cavity 16. Connection to N-type region 36 of PN junction diode 40 is made with second metal bond pad 49.
  • reservoir port 32 which is located within the circular PN junction diode 40, is placed away from depletion region 45.
  • Depletion region 45 defines a standoff distance between edge 50 of port 32 and edge 52 of PN junction diode 40, which may easily be calculated for each application by known methods.
  • the devices are soaked in water prior to the wafer test.
  • Various substances may be added to the water including surfactants and conducting agents. Other materials may be used in addition to or in place of water.
  • the reservoir and the diffusion chamber of leaky devices receive and retain relatively large volumes of water. Due to the characteristics of the long and narrow diffusion channel, evaporation is restricted, and thus relatively high moisture is retained within the diffusion channel, generally on the order of about 50% relative humidity (RH) or more.
  • RH relative humidity
  • a sufficiently high reverse current may be forced through PN junction diode 40 and the resulting voltage is measured. Alternatively, a known voltage may be applied to PN junction diode 40 and the reverse current is measured. It is well known in the art as to the amount of reverse current or voltage should be applied to the PN junction diode. The measured voltage or current is an indication that there is a leak in the device. The leaky device may then be identified and discarded.
  • the improved leak detection scheme disclosed herein has many advantages over the old method. Leak detection using an exposed junction diode has been proven in high volume manufacturing. It is a simple and scalable method. The new, improved method can be a replacement for the existing non-optimized structure, and requires no additional processing. The reservoir and its diffusion channel significantly increase the time measurable water vapor remains within an unsealed cavity, assuring leak detectability over a longer period of time. This reduces the time constraints between the soak and test, which gives the manufacturing testing organization increased flexibility to manage product flow on the test floor.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Examining Or Testing Airtightness (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Claims (20)

  1. Procédé pour détecter une fuite dans un dispositif micro-usiné (10) ayant une tranche de dispositif (11) et une tranche de recouvrement (12), ledit procédé étant caractérisé par les étapes consistant à :
    (a) former au moins un réservoir (30) sur au moins l'une de la tranche de dispositif (11) et de la tranche de recouvrement (12), l'au moins un réservoir (30) ayant au moins un orifice de réservoir (32) ;
    (b) former une diode à jonction PN (40) adjacente à l'au moins un orifice de réservoir (32) ;
    (c) lier la tranche de dispositif (11) avec la tranche de recouvrement (12), pour former une cavité (16) entourant la diode à jonction PN (40) ; et
    (d) tester électriquement la diode à jonction PN (40) comme une indication de la présence d'humidité à l'intérieur de la cavité (16).
  2. Procédé selon la revendication 1, caractérisé en ce que l'étape (a) comprend l'étape consistant à former au moins un canal de diffusion (31) reliant l'au moins un réservoir (30) à l'au moins un orifice de réservoir (32), chaque orifice de réservoir (32) étant positionné pour être en communication avec la cavité (16).
  3. Procédé selon la revendication 1, caractérisé en ce que l'étape (a) comprend l'étape consistant à former l'au moins un orifice de réservoir (32) par la méthode de gravure profonde par ions réactifs (en anglais « Deep Reaction Ion Etching » - DRIE).
  4. Procédé selon la revendication 1, caractérisé en ce que l'étape (b) comprend l'étape consistant à former une diode à jonction PN (40) en lui donnant au moins une forme avantageuse de type linéaire, segmentée, pliée, courbe, ovale ou circulaire.
  5. Procédé selon la revendication 2, caractérisé en ce que l'étape (b) comprend l'étape consistant à former une diode à jonction PN (40) pour entourer l'au moins un orifice de réservoir (32).
  6. Procédé selon la revendication 1, caractérisé en outre par les étapes consistant à forcer un liquide à travers un espace entre les tranches liées, et à retenir l'humidité dans l'au moins un réservoir (30), avant l'étape (d).
  7. Procédé selon la revendication 1, caractérisé en ce que l'étape (d) comprend les étapes consistant à provoquer un courant inverse en appliquant un courant à travers la diode à jonction PN (40), et à mesurer la tension comme indication de la présence d'humidité à l'intérieur de la cavité (16).
  8. Procédé selon la revendication 1, caractérisé en ce que l'étape (d) comprend les étapes consistant à provoquer un courant inverse en appliquant un potentiel électrique à travers la diode à jonction PN (40), et à mesurer le courant inverse comme indication de la présence d'humidité à l'intérieur de la cavité (16).
  9. Procédé selon la revendication 1, caractérisé en outre par l'étape consistant à former un élément capteur (14) sur la tranche de dispositif avant l'étape (c).
  10. Procédé selon la revendication 1, caractérisé en ce que la liaison à l'étape (c) est réalisée par un procédé comprenant une liaison directe au silicium, une liaison anodique et une liaison à verre fritté.
  11. Ensemble à dispositif micro-usiné (10), comprenant :
    une tranche de dispositif (11) ;
    une tranche de recouvrement (12) liée sur ladite tranche de dispositif (11) pour définir au moins partiellement une cavité (16) et caractérisé par :
    au moins un réservoir (30) pour recevoir un liquide et retenir l'humidité, ledit au moins un réservoir (30) définissant au moins un orifice de réservoir (32) en communication avec ladite cavité ;
    une diode à jonction PN exposée (40) disposée à l'intérieur de ladite cavité (16), et adjacente audit au moins un orifice de réservoir (32) ; et
    une paire de plaquettes métalliques (48, 49) connectées à ladite diode à jonction PN exposée (40).
  12. Ensemble à dispositif selon la revendication 11, caractérisé en ce que ledit au moins un réservoir comprend au moins un canal de diffusion (31) reliant ledit au moins un réservoir (30) audit au moins un orifice de réservoir (32).
  13. Ensemble à dispositif selon la revendication 12, caractérisé en ce que ledit au moins un réservoir (30) et ledit au moins un canal de diffusion (31) sont disposés dans une sous-surface de ladite tranche de dispositif (11).
  14. Ensemble à dispositif selon la revendication 11, caractérisé en ce que ladite diode à jonction PN exposée (40) est enfermée à l'intérieur de ladite cavité (16) et ladite paire de plaquettes métalliques (48, 49) est disposée à l'extérieur de ladite cavité.
  15. Ensemble à dispositif selon la revendication 11, caractérisé en ce que ladite diode à jonction PN exposée (40) a au moins une forme avantageuse de type linéaire, segmentée, pliée, courbe, ovale ou circulaire.
  16. Ensemble à dispositif selon la revendication 11, caractérisé en ce que ladite diode à jonction PN exposée (40) est circulaire, et entourant partiellement ledit au moins un orifice de réservoir (32).
  17. Ensemble à dispositif selon la revendication 11, caractérisé en ce que ladite diode à jonction PN exposée (40) est circulaire, et entourant entièrement ledit au moins un orifice de réservoir (32).
  18. Ensemble à dispositif selon la revendication 11, caractérisé en ce que ladite diode à jonction PN exposée (40) définit une région P (41) et une région N (36), et dans lequel l'une de ladite paire de plaquettes métalliques (48) est reliée à ladite région P (41), et l'autre de ladite paire de plaquettes métalliques (49) est reliée à ladite région N (36).
  19. Ensemble à dispositif selon la revendication 11, caractérisé en outre par l'inclusion d'au moins un élément capteur (14) disposé à l'intérieur de ladite cavité (16) et relié à des plaquettes d'entrée et de sortie de capteur (24) à l'extérieur de ladite cavité.
  20. Ensemble à dispositif selon la revendication 11, caractérisé en ce que lesdites tranches (11, 12) sont faites en au moins un matériau semi-conducteur.
EP04077771A 2003-10-15 2004-10-06 Procédé de détection de fuite et ensemble à dispositif micro-usiné Not-in-force EP1524511B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US686299 2003-10-15
US10/686,299 US7026645B2 (en) 2003-10-15 2003-10-15 Leak detection method and micro-machined device assembly

Publications (3)

Publication Number Publication Date
EP1524511A2 EP1524511A2 (fr) 2005-04-20
EP1524511A3 EP1524511A3 (fr) 2011-08-03
EP1524511B1 true EP1524511B1 (fr) 2012-10-17

Family

ID=34377639

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04077771A Not-in-force EP1524511B1 (fr) 2003-10-15 2004-10-06 Procédé de détection de fuite et ensemble à dispositif micro-usiné

Country Status (2)

Country Link
US (1) US7026645B2 (fr)
EP (1) EP1524511B1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004036433B4 (de) * 2004-07-27 2013-03-28 Robert Bosch Gmbh Mikromechanisches Bauteil und Verfahren zur Herstellung eines solchen Bauteils
US8007166B2 (en) 2005-05-25 2011-08-30 Northrop Grumman Systems Corporation Method for optimizing direct wafer bond line width for reduction of parasitic capacitance in MEMS accelerometers
DE102014201529A1 (de) 2014-01-28 2015-07-30 Siemens Aktiengesellschaft Verfahren zum Betreiben eines Druckmessumformers sowie Druckmessumformer
US11499886B2 (en) * 2017-11-02 2022-11-15 Mitsubishi Electric Corporation Test method of a semiconductor device and manufacturing method of a semiconductor device
CN112955725B (zh) * 2018-11-13 2023-03-21 三菱电机株式会社 半导体装置、半导体装置的泄漏检查方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2346897A1 (fr) * 1975-01-22 1977-10-28 Thomson Csf Circuit millimetrique hyperfrequence
US5837562A (en) * 1995-07-07 1998-11-17 The Charles Stark Draper Laboratory, Inc. Process for bonding a shell to a substrate for packaging a semiconductor
US5600071A (en) * 1995-09-05 1997-02-04 Motorola, Inc. Vertically integrated sensor structure and method
US5721162A (en) * 1995-11-03 1998-02-24 Delco Electronics Corporation All-silicon monolithic motion sensor with integrated conditioning circuit
JPH09222372A (ja) * 1996-02-19 1997-08-26 Mitsubishi Electric Corp 半導体式センサ
US6062461A (en) * 1998-06-03 2000-05-16 Delphi Technologies, Inc. Process for bonding micromachined wafers using solder
US6074891A (en) 1998-06-16 2000-06-13 Delphi Technologies, Inc. Process for verifying a hermetic seal and semiconductor device therefor
US6750521B1 (en) * 1999-10-22 2004-06-15 Delphi Technologies, Inc. Surface mount package for a micromachined device
US6384473B1 (en) * 2000-05-16 2002-05-07 Sandia Corporation Microelectronic device package with an integral window
US6727524B2 (en) * 2002-03-22 2004-04-27 Kulite Semiconductor Products, Inc. P-n junction structure
US6861289B2 (en) * 2002-07-25 2005-03-01 Delphi Technologies, Inc. Moisture-sensitive device protection system

Also Published As

Publication number Publication date
US20050093533A1 (en) 2005-05-05
EP1524511A3 (fr) 2011-08-03
US7026645B2 (en) 2006-04-11
EP1524511A2 (fr) 2005-04-20

Similar Documents

Publication Publication Date Title
JP3187389B2 (ja) 密閉状態を確証するプロセス及びそのための半導体デバイス
CN106257254B (zh) 生成具有降低的环境温度依赖性的换能信号的压力传感器及其制造方法
Zhang et al. A high-sensitive ultra-thin MEMS capacitive pressure sensor
US8008738B2 (en) Integrated differential pressure sensor
JP6258599B2 (ja) 応力隔離ｍｅｍｓ構造および製造方法
US9926188B2 (en) Sensor unit including a decoupling structure and manufacturing method therefor
US9764947B2 (en) Piezoresistive pressure sensor device
EP2955151B1 (fr) Étalonnage de dispositifs mems
US8878316B2 (en) Cap side bonding structure for backside absolute pressure sensors
US6518084B1 (en) Method of producing a micromechanical structure for a micro-electromechanical element
EP1601942B1 (fr) Capteur de pression sur silicium à égalisation de pression réduite entre une pression mesurée et une chambre de pression de référence
US8759136B2 (en) Method for creating monocrystalline piezoresistors
EP1524511B1 (fr) Procédé de détection de fuite et ensemble à dispositif micro-usiné
US9804045B2 (en) Method of manufacturing a pressure sensor
JP4265351B2 (ja) メンブレンを有するセンサ装置
JPH0979928A (ja) 半導体圧力センサ装置
Sparjs Packaging of microsystems for harsh environments
Knechtel et al. Monitoring inner pressure of MEMS devices sealed by wafer bonding
CN117629506A (zh) 一种复合真空度传感器及其制造方法
TW201012741A (en) Micromechanical sensor and the manufacturing method thereof
CN113247857A (zh) 一种高可靠性mems压力传感器结构及封装方法
CN109384188A (zh) 传感器设备和用于具有至少一个化学或电化学探测装置的传感器设备的制造方法
JPH0615986B2 (ja) 半導体式加速度センサの製造方法
JPH1137874A (ja) 圧力検出装置

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL HR LT LV MK

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL HR LT LV MK

RIC1 Information provided on ipc code assigned before grant

Ipc: G01M 3/18 20060101AFI20110630BHEP

Ipc: G01M 3/40 20060101ALI20110630BHEP

Ipc: G01M 3/22 20060101ALI20110630BHEP

17P Request for examination filed

Effective date: 20120110

AKX Designation fees paid

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

Ref country code: DE

Ref legal event code: R081

Ref document number: 602004039673

Country of ref document: DE

Owner name: GOOGLE LLC (N.D.GES.D. STAATES DELAWARE), MOUN, US

Free format text: FORMER OWNER: DELPHI TECHNOLOGIES, INC., TROY, MICH., US

Ref country code: DE

Ref legal event code: R081

Ref document number: 602004039673

Country of ref document: DE

Owner name: GOOGLE INC. (N.D.GES.D. STAATES DELAWARE), MOU, US

Free format text: FORMER OWNER: DELPHI TECHNOLOGIES, INC., TROY, MICH., US

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 580115

Country of ref document: AT

Kind code of ref document: T

Effective date: 20121115

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602004039673

Country of ref document: DE

Effective date: 20121213

REG Reference to a national code

Ref country code: NL

Ref legal event code: T3

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 580115

Country of ref document: AT

Kind code of ref document: T

Effective date: 20121017

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20130128

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20121017

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20121017

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20130118

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20121017

Ref country code: BE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20121017

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20130218

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20121017

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20121017

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20121017

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20130117

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20121017

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20121017

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20121017

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20121017

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20121017

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20121017

26N No opposition filed

Effective date: 20130718

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602004039673

Country of ref document: DE

Effective date: 20130718

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20121017

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20131006

REG Reference to a national code

Ref country code: IE

Ref legal event code: MM4A

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20131006

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20131031

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20131031

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20140630

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20131031

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20131006

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20121017

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20131006

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO

Effective date: 20041006

REG Reference to a national code

Ref country code: DE

Ref legal event code: R082

Ref document number: 602004039673

Country of ref document: DE

Representative=s name: WUESTHOFF & WUESTHOFF, PATENTANWAELTE PARTG MB, DE

Ref country code: DE

Ref legal event code: R081

Ref document number: 602004039673

Country of ref document: DE

Owner name: GOOGLE LLC (N.D.GES.D. STAATES DELAWARE), MOUN, US

Free format text: FORMER OWNER: DELPHI TECHNOLOGIES, INC., TROY, MICH., US

Ref country code: DE

Ref legal event code: R081

Ref document number: 602004039673

Country of ref document: DE

Owner name: GOOGLE INC. (N.D.GES.D. STAATES DELAWARE), MOU, US

Free format text: FORMER OWNER: DELPHI TECHNOLOGIES, INC., TROY, MICH., US

REG Reference to a national code

Ref country code: DE

Ref legal event code: R082

Ref document number: 602004039673

Country of ref document: DE

Representative=s name: WUESTHOFF & WUESTHOFF, PATENTANWAELTE PARTG MB, DE

Ref country code: DE

Ref legal event code: R081

Ref document number: 602004039673

Country of ref document: DE

Owner name: GOOGLE LLC (N.D.GES.D. STAATES DELAWARE), MOUN, US

Free format text: FORMER OWNER: GOOGLE INC. (N.D.GES.D. STAATES DELAWARE), MOUNTAIN VIEW, CALIF., US

REG Reference to a national code

Ref country code: NL

Ref legal event code: PD

Owner name: GOOGLE LLC; US

Free format text: DETAILS ASSIGNMENT: CHANGE OF OWNER(S), ASSIGNMENT; FORMER OWNER NAME: GOOGLE INC.

Effective date: 20180912

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 20181026

Year of fee payment: 15

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20181029

Year of fee payment: 15

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 602004039673

Country of ref document: DE

REG Reference to a national code

Ref country code: NL

Ref legal event code: MM

Effective date: 20191101

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200501

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20191101

P01 Opt-out of the competence of the unified patent court (upc) registered

Effective date: 20230516