EP1501127A2 - Power semiconductor module with base plate having high bending stiffness - Google Patents

Power semiconductor module with base plate having high bending stiffness Download PDF

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Publication number
EP1501127A2
EP1501127A2 EP04014433A EP04014433A EP1501127A2 EP 1501127 A2 EP1501127 A2 EP 1501127A2 EP 04014433 A EP04014433 A EP 04014433A EP 04014433 A EP04014433 A EP 04014433A EP 1501127 A2 EP1501127 A2 EP 1501127A2
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EP
European Patent Office
Prior art keywords
base plate
power semiconductor
semiconductor module
module according
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP04014433A
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German (de)
French (fr)
Other versions
EP1501127A3 (en
EP1501127B1 (en
Inventor
Yvonne Manz
Jürgen Steger
Harald JÄGER
Herbert Rüger
Jürgen Matthes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron Elektronik GmbH and Co KG
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Semikron Elektronik GmbH and Co KG
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Publication of EP1501127A2 publication Critical patent/EP1501127A2/en
Publication of EP1501127A3 publication Critical patent/EP1501127A3/en
Application granted granted Critical
Publication of EP1501127B1 publication Critical patent/EP1501127B1/en
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass

Definitions

  • the invention describes a power semiconductor module consisting of a housing with Base plate and at least one disposed therein electrically insulating substrate.
  • This in turn consists of an insulating body with a plurality of it located against each other insulated metallic interconnect tracks and on it located and associated with these interconnects circuit Power semiconductor devices.
  • the substrate has on its underside a flat metallic layer, comparable to the connecting tracks on.
  • Such power semiconductor modules have connection elements for load and auxiliary contacts on.
  • Power semiconductor modules that are the starting point of this invention are exemplary known from DE 103 16 355.
  • Such power semiconductor modules have a base plate for thermal coupling to a heat sink. It is special for this Meaning that the base plate after attaching the power semiconductor module As completely as possible in contact with the heat sink is an efficient heat transfer to ensure.
  • the area ratio of the substrate with the arranged thereon power semiconductor components is particularly high, they have Power semiconductor modules exclusively in the corner areas connecting devices to Connection to the heat sink.
  • Especially power semiconductor modules with high Benefits advantageously have a design in which the longitudinal extent is much larger than the transverse extent.
  • the substrate be on the the base plate facing side has a further metallization. By means of this Metallization, the substrates are firmly bonded to the base plate. After this In the prior art, this connection is made by means of soldering.
  • concave deflection is meant here a deflection be in which the deflection of the central region of the base plate in the direction of Power semiconductor module takes place, under convex deflection is a deflection in Direction of the heat sink understood.
  • Beneficial for efficient heat transfer between the power semiconductor module and the heat sink is a convex deflection the base plate, since thus the base plate after mounting on the heat sink plan on this rests. With concave deflection no plane support would take place.
  • the production of the base plates according to the prior art with a Convex deflection made. Despite this so-called. Pretension of the base plate, the Soldering of the substrates lead to a concave deflection of the base plate, if this is not sufficiently rigid. A sufficient rigidity is according to the state of Technology achieved by a correspondingly thick design of the base plate.
  • the present invention is therefore based on the object of a power semiconductor module imagine, in which the flexural rigidity in the longitudinal direction of the base plate given Thickness is increased.
  • the basic idea of the invention is based on a power semiconductor module having a Base plate for mounting on a heat sink according to the cited prior art consisting of a frame-like housing with at least one arranged therein electrically insulating substrate.
  • This substrate in turn consists of a Insulating body having a plurality of located on its first major surface mutually insulated metallic interconnect tracks and preferably from a on its second major surface arranged flat metallic layer.
  • On the Connecting tracks of the first main surface and with these connecting tracks connected in accordance with the circuit is a plurality of power semiconductor components arranged.
  • the power semiconductor module continues to lead to the outside Connection elements for load and auxiliary contacts.
  • the inventive power semiconductor module has a base plate, which in the longitudinal direction has at least one stiffening structure.
  • This stiffening structure is through Deformation of a part of the base plate is formed and protrudes from the one by the base plate self-defined plane parallel to the heat sink out.
  • On this base plate is a Substrate, but preferably a plurality of individual substrates arranged.
  • this is a material connection, which after the State of the art is designed as a solder joint.
  • An advantage of this embodiment of a power semiconductor module is that given Thickness of the base plate whose rigidity in the longitudinal direction is substantially increased and thus a in the manufacture of the base plate produced convex deflection even after the Soldering of the substrates is given.
  • FIG. 1 shows a power semiconductor module according to the prior art in plan view. Shown is a power semiconductor module (10) consisting of a base plate (20) for Mounting on a heat sink. For this purpose, this base plate (20) in the region of its corners in each case a recess (22).
  • the module continues to consist of a frame-like Housing (30) and two electrically insulating substrates (50).
  • the respective substrate in turn consists of a Isolierstoff Ari (52) with a plurality of on its first the base plate facing away from main surface located against each other metallic connecting tracks (54).
  • Main surface On its second facing the base plate Main surface has the substrate one of the connecting tracks of the first major surface similar planar metallization (53, Fig. 2) on.
  • connecting tracks (54) and with these are connected by means of wire bonding connections (48) Power semiconductor components (56) and a sensor component (58) arranged. to electrical contacting, the sub-module (10) connecting elements (40, 42, 44) for the Load connections.
  • the connecting tracks (54) of the substrates (50) are partly with each other and with the connecting elements (40) directly or by means of solder bridges (46) connected with each other.
  • FIGS. 2 to 4 show side views of power semiconductor modules according to the prior art the technique (Fig. 2) and according to the invention (Fig. 3, 4), each along a Section A-A (see Fig. 1).
  • a power semiconductor module (10) with one is shown frame-like housing (30) in the side view.
  • a so-called DCB (Direct Copper Bonding) substrate (50) On the base plate (20) is arranged a so-called DCB (Direct Copper Bonding) substrate (50).
  • This copper layer (54) represents the connecting tracks of the power semiconductor module.
  • Connecting tracks (54) are the components (56), as a rule Power semiconductor components and sensor components, arranged.
  • the circuit-fair Connections are made by wire bonds (44).
  • auxiliary connection elements of the respective power semiconductor module shown. These are formed by contact springs (60) on a circuit board arranged conductor tracks (72) and pins (76).
  • the circuit board on which Contact surfaces (78) end these contact springs here is an integral part of the lid (70).
  • the lid itself is here like a frame and surrounds the circuit board their edges without completely covering them.
  • Fig. 2 shows a section along the line A-A through the power semiconductor module according to the prior art of FIG. 1 in side view.
  • the base plate (20) consists of a flat copper plate, the longitudinal in a convex bias of about 2mm at has a length of about 15cm.
  • FIG. 3 shows a section through a power semiconductor module according to the invention in FIG Side view.
  • the longitudinal sides of the base plate (20) are here without interruption a portion (24a) between the recesses (Fig. 1, 22) each about 90 ° in Direction of the module interior, ie in the direction of the heat sink side facing away from the Base plate (20), bent upwards.
  • this stiffening structure (24) can be in the Compared to the prior art used by at least 20% thinner base plate while increasing flexural stiffness by 60%.
  • a convexly preloaded Base plate retains this convex bias even after the substrates have been soldered.
  • the Bias is also here as in the prior art at about 2mm.
  • Fig. 4. shows a section through a further embodiment of an inventive Power semiconductor module in side view.
  • a stiffening structure (24) of Base plate (20) realized by in several sections along the longitudinal side of the Power semiconductor module (10) longitudinally extending embossing areas (24b) are arranged.
  • These embossed areas are designed such that on the the heat sink (80) side facing the material of the base bar (20), usually copper, partially in Direction of the module interior is pressed. This results in the heat sink (80) opposite side of the base plate (20) has a bulge. This will be in the area of Embossing achieved a stiffening in the longitudinal direction.
  • the embossing areas (24b) have advantageously a ratio of length to width of more than 4: 1. It continues advantageous if the individual embossed areas overlap each other by more than 20%.
  • the base plate (20) has the above-described convex bias.
  • FIG. 5 shows a base plate of a power semiconductor module according to the invention in FIG three-dimensional view.
  • a base plate (20 see Fig. 3)
  • certain recesses (22) on each longitudinal side by introducing recesses (26) a section (24a) punched free.
  • the section 24 is out of the through the base plate itself given plane out in the direction of the substrate.
  • the Base plate (20) convex, as described above, biased.
  • This embodiment of Base plate (20) of the power semiconductor component according to the invention takes place in known punching and bending technique.

Abstract

The device has a metal base plate (20) for mounting on a cooling body (80) with a frame-shaped housing (30), a cover (70), outward-leading connection elements and at least one insulating substrate (50) in the housing with an insulating body, connecting tracks (54) on a main surface facing the base plate, connected power semiconducting components and a metal coating on a second main surface. The base plate has a stiffening structure (24a) in the longitudinal direction formed from the base plate material by deformation.

Description

Die Erfindung beschreibt ein Leistungshalbleitermodul bestehend aus einem Gehäuse mit Grundplatte und mindestens einem darin angeordneten elektrisch isolierenden Substrat. Dieses besteht seinerseits aus einem Isolierstoffkörper mit einer Mehrzahl darauf befindlicher gegeneinander isolierter metallischer Verbindungsbahnen und hierauf befindlichen und mit diesen Verbindungsbahnen schaltungsgerecht verbundenen Leistungshalbleiterbauelementen. Vorteilhafterweise weist das Substrat auf seiner Unterseite eine flächige metallische Schicht, vergleichbar den Verbindungsbahnen, auf. Weiterhin weisen derartige Leistungshalbleitermodule Anschlusselemente für Last- und Hilfskontakte auf.The invention describes a power semiconductor module consisting of a housing with Base plate and at least one disposed therein electrically insulating substrate. This in turn consists of an insulating body with a plurality of it located against each other insulated metallic interconnect tracks and on it located and associated with these interconnects circuit Power semiconductor devices. Advantageously, the substrate has on its underside a flat metallic layer, comparable to the connecting tracks on. Farther Such power semiconductor modules have connection elements for load and auxiliary contacts on.

Leistungshalbleitermodule, die Ausgangspunkt dieser Erfindung sind, sind beispielhaft bekannt aus DE 103 16 355. Derartige Leistungshalbleitermodule weisen eine Grundplatte zur thermischen Kopplung an einen Kühlkörper auf. Hierfür ist es von besonderer Bedeutung, dass die Grundplatte nach der Befestigung des Leistungshalbeitermoduls möglichst vollständig in Kontakt mit dem Kühlkörper ist um einen effizienten Wärmeübergang zu gewährleisten. Da bei modernen Leistungshalbleitermodulen besonderer Wert auf eine kompakte Bauform gelegt wird und deswegen der Flächenanteil des Substrates mit den darauf angeordneten Leistungshalbleiterbauelementen besonders hoch ist, weisen diese Leistungshalbleitermodule ausschließlich in den Eckbereichen Verbindungseinrichtungen zur Verbindung mit dem Kühlkörper auf. Besonders Leistungshalbleitermodule mit hohen Leistungen weisen vorteilhafterweise eine Bauform auf, bei der die Längsausdehnung wesentlich größer ist als die Querausdehnung. Es ist bevorzugt, dass das Substrat auf der der Grundplatte zugewandten Seite eine weitere Metallisierung aufweist. Mittels dieser Metallisierung sind die Substrate stoffschlüssig mit der Grundplatte verbunden. Nach dem Stand der Technik wird diese Verbindung mittels Löten hergestellt.Power semiconductor modules that are the starting point of this invention are exemplary known from DE 103 16 355. Such power semiconductor modules have a base plate for thermal coupling to a heat sink. It is special for this Meaning that the base plate after attaching the power semiconductor module As completely as possible in contact with the heat sink is an efficient heat transfer to ensure. As with modern power semiconductor modules special emphasis on a compact design is placed and therefore the area ratio of the substrate with the arranged thereon power semiconductor components is particularly high, they have Power semiconductor modules exclusively in the corner areas connecting devices to Connection to the heat sink. Especially power semiconductor modules with high Benefits advantageously have a design in which the longitudinal extent is much larger than the transverse extent. It is preferred that the substrate be on the the base plate facing side has a further metallization. By means of this Metallization, the substrates are firmly bonded to the base plate. After this In the prior art, this connection is made by means of soldering.

Bei Leistungshalbleitermodulen mit vergleichsweise großer Längsausdehnung kann eine Lötverbindung der Substrate und der Grundplatte zu einer konkaven Durchbiegung der Grundplatte führen. Unter konkaver Durchbiegung soll hier eine Durchbiegung verstanden werden, bei der die Durchbiegung des Mittelbereichs der-Grundplatte in Richtung des Leistungshalbleitermoduls erfolgt, unter konvexer Durchbiegung wird eine Durchbiegung in Richtung des Kühlkörpers verstanden. Vorteilhaft für einen effizienten Wärmeübergang zwischen dem Leistungshalbleitermodul und dem Kühlkörper ist eine konvexe Durchbiegung der Grundplatte, da somit die Grundplatte nach der Befestigung auf dem Kühlkörper plan auf diesem aufliegt. Bei konkaver Durchbiegung würde keine plane Auflage erfolgen. Bereits bei der Herstellung werden somit die Grundplatten nach dem Stand der Technik mit einer konvexen Durchbiegung gefertigt. Trotz dieser sog. Vorspannung der Grundplatte kann die Lötung der Substrate zu einer konkaven Durchbiegung der Grundplatte führen, falls diese nicht ausreichend steif ausgeführt ist. Eine ausreichende Steifigkeit wird nach dem Stand der Technik durch eine entsprechend dicke Auslegung der Grundplatte erreicht.In power semiconductor modules with comparatively large longitudinal extent can be Soldering of the substrates and the base plate to a concave deflection of the Guide base plate. By concave deflection is meant here a deflection be in which the deflection of the central region of the base plate in the direction of Power semiconductor module takes place, under convex deflection is a deflection in Direction of the heat sink understood. Beneficial for efficient heat transfer between the power semiconductor module and the heat sink is a convex deflection the base plate, since thus the base plate after mounting on the heat sink plan on this rests. With concave deflection no plane support would take place. Already at Thus, the production of the base plates according to the prior art with a Convex deflection made. Despite this so-called. Pretension of the base plate, the Soldering of the substrates lead to a concave deflection of the base plate, if this is not sufficiently rigid. A sufficient rigidity is according to the state of Technology achieved by a correspondingly thick design of the base plate.

Andererseits fordert eine kostengünstige und kompakte Herstellung eines Leistungshalbleitermoduls eine Grundplatte mit möglichst geringer Dicke. Leistungshalbleitermodule, speziell mit im Vergleich zur Querausdehnung wesentlich größerer Längsausdehnung, weisen nach dem Stand der Technik somit entweder den Nachteil einer dicken Grundplatte oder der konkaven Durchbiegung einer dünneren Grundplatte auf.On the other hand, requires a cost and compact production of a Power semiconductor module a base plate with the smallest possible thickness. Power semiconductor modules, especially with compared to the transverse extent essential greater longitudinal extent, thus according to the prior art either the Disadvantage of a thick base plate or the concave deflection of a thinner Base plate on.

Der vorliegenden Erfindung liegt daher die Aufgabe zu Grunde ein Leistungshalbleitermodul vorzustellen, bei dem die Biegesteifigkeit in Längsrichtung der Grundplatte bei gegebener Dicke erhöht ist.The present invention is therefore based on the object of a power semiconductor module imagine, in which the flexural rigidity in the longitudinal direction of the base plate given Thickness is increased.

Diese Aufgabe wird gelöst durch ein Leistungshalbleitermodul nach dem Anspruch 1, spezielle Ausgestaltungen finden sich in den Unteransprüchen.This object is achieved by a power semiconductor module according to claim 1, special embodiments can be found in the subclaims.

Der Grundgedanke der Erfindung geht aus von einem Leistungshalbleitermodul mit einer Grundplatte zur Montage auf einem Kühlkörper nach dem genannten Stand der Technik bestehend aus einem rahmenartigen Gehäuse mit mindestens einem darin angeordneten elektrisch isolierenden Substrat. Dieses Substrat besteht seinerseits aus einem Isolierstoffkörper mit einer Mehrzahl von auf seiner ersten Hauptfläche befindlichen gegeneinander isolierten metallischen Verbindungsbahnen sowie vorzugsweise aus einer auf seiner zweiten Hauptfläche angeordneten flächigen metallischen Schicht. Auf den Verbindungsbahnen der ersten Hauptfläche und mit diesen Verbindungsbahnen schaltungsgerecht verbunden ist eine Mehrzahl von Leistungshalbleiterbauelementen angeordnet. Das Leistungshalbleitermodul weist weiterhin nach außen führende Anschlusselemente für Last- und Hilfskontakte auf.The basic idea of the invention is based on a power semiconductor module having a Base plate for mounting on a heat sink according to the cited prior art consisting of a frame-like housing with at least one arranged therein electrically insulating substrate. This substrate in turn consists of a Insulating body having a plurality of located on its first major surface mutually insulated metallic interconnect tracks and preferably from a on its second major surface arranged flat metallic layer. On the Connecting tracks of the first main surface and with these connecting tracks connected in accordance with the circuit is a plurality of power semiconductor components arranged. The power semiconductor module continues to lead to the outside Connection elements for load and auxiliary contacts.

Das erfinderische Leistungshalbleitermodul weist eine Grundplatte auf, die in Längsrichtung mindestens eine Versteifungsstruktur aufweist. Diese Versteifungsstruktur wird durch Verformen eines Teiles Grundplatte gebildet und ragt aus der durch die von der Grundplatte selbst definierten Ebene parallel zum Kühlkörper heraus. Auf dieser Grundplatte ist ein Substrat, vorzugsweise allerdings eine Mehrzahl einzelner Substrate, angeordnet. vorzugsweise handelt es sich hierbei um eine stoffschlüssige Verbindung, die nach dem Stand der Technik als Lötverbindung ausgebildet ist.The inventive power semiconductor module has a base plate, which in the longitudinal direction has at least one stiffening structure. This stiffening structure is through Deformation of a part of the base plate is formed and protrudes from the one by the base plate self-defined plane parallel to the heat sink out. On this base plate is a Substrate, but preferably a plurality of individual substrates arranged. Preferably, this is a material connection, which after the State of the art is designed as a solder joint.

Vorteilhaft an dieser Ausgestaltung eines Leistungshalbleitermoduls ist, dass bei gegebener Dicke der Grundplatte deren Steifigkeit in Längsrichtung wesentlich erhöht ist und somit eine bei der Herstellung der Grundplatte produzierte konvexe Durchbiegung auch nach der Lötung der Substrate gegeben ist.An advantage of this embodiment of a power semiconductor module is that given Thickness of the base plate whose rigidity in the longitudinal direction is substantially increased and thus a in the manufacture of the base plate produced convex deflection even after the Soldering of the substrates is given.

Die Erfindung wird anhand von Ausführungsbeispielen in Verbindung mit den Fig. 1 bis 6 näher erläutert.

Fig. 1
zeigt ein Leistungshalbleitermodul nach dem Stand der Technik in Draufsicht.
Fig. 2
zeigt einen Schnitt entlang der Linie A-A durch das Leistungshalbleitermodul nach Fig. 1 in Seitenansicht.
Fig. 3
zeigt einen Schnitt durch ein erfindungsgemäßes Leistungshalbleitermoduls in Seitenansicht.
Fig. 4
zeigt einen Schnitt durch eine weitere Ausgestaltung eines erfindungsgemäßen Leistungshalbleitermoduls in Seitenansicht.
Fig. 5
zeigt eine Grundplatte eines erfindungsgemäßen Leistungshalbleitermoduls in dreidimensionaler Ansicht.
The invention will be explained in more detail with reference to embodiments in conjunction with FIGS. 1 to 6.
Fig. 1
shows a power semiconductor module according to the prior art in plan view.
Fig. 2
shows a section along the line AA through the power semiconductor module of FIG. 1 in side view.
Fig. 3
shows a section through an inventive power semiconductor module in side view.
Fig. 4
shows a section through a further embodiment of a power semiconductor module according to the invention in side view.
Fig. 5
shows a base plate of a power semiconductor module according to the invention in three-dimensional view.

Fig. 1 zeigt ein Leistungshalbleitermodul nach dem Stand der Technik in Draufsicht.. Dargestellt ist ein Leistungshalbleitermodul (10) bestehend aus einer Grundplatte (20) zur Montage auf einem Kühlkörper. Hierzu weist diese Grundplatte (20) im Bereich ihrer Ecken jeweils eine Ausnehmung (22) auf. Das Modul besteht weiterhin aus einem rahmenartigen Gehäuse (30) sowie zwei elektrisch isolierenden Substraten (50). Das jeweilige Substrat besteht seinerseits aus einem Isolierstoffkörper (52) mit einer Mehrzahl von auf seiner ersten der Grundplatte abgewandten Hauptfläche befindlichen gegeneinander isolierten metallischen Verbindungsbahnen (54). Auf seiner zweiten der Grundplatte zugewandten Hauptfläche weist das Substrat eine den Verbindungsbahnen der ersten Hauptfläche gleichartige flächige Metallisierung (53, Fig. 2) auf. Auf den Verbindungsbahnen (54) und mit diesen schaltungsgerecht mittels Drahtbondverbindungen (48) verbunden sind Leistungshalbleiterbauelemente (56) sowie ein Sensorikbauteil (58) angeordnet. Zur elektrischen Kontaktierung weist das Teilmodul (10) Anschlusselemente (40, 42, 44) für die Lastanschlüsse auf. Die Verbindungsbahnen (54) der Substrate (50) sind zum Teil miteinander und mit den Anschlusselementen (40) direkt oder mittels Lötbrücken (46) miteinander verbunden.1 shows a power semiconductor module according to the prior art in plan view. Shown is a power semiconductor module (10) consisting of a base plate (20) for Mounting on a heat sink. For this purpose, this base plate (20) in the region of its corners in each case a recess (22). The module continues to consist of a frame-like Housing (30) and two electrically insulating substrates (50). The respective substrate in turn consists of a Isolierstoffkörper (52) with a plurality of on its first the base plate facing away from main surface located against each other metallic connecting tracks (54). On its second facing the base plate Main surface has the substrate one of the connecting tracks of the first major surface similar planar metallization (53, Fig. 2) on. On the connecting tracks (54) and with these are connected by means of wire bonding connections (48) Power semiconductor components (56) and a sensor component (58) arranged. to electrical contacting, the sub-module (10) connecting elements (40, 42, 44) for the Load connections. The connecting tracks (54) of the substrates (50) are partly with each other and with the connecting elements (40) directly or by means of solder bridges (46) connected with each other.

Die Fig. 2 bis 4 zeigen Seitenansichten durch Leistungshalbleitermodule nach dem Stand der Technik (Fig. 2) sowie gemäß der Erfindung (Fig. 3, 4), jeweils entlang eines Schnittes A-A (vgl. Fig. 1). Dargestellt ist jeweils ein Leistungshalbleitermodul (10) mit einem rahmenartigen Gehäuse (30) in der Seitenansicht. Auf der Grundplatte (20) angeordnet ist ein sog. DCB- (Direct Copper Bonding) Substrat (50). Dieses besteht aus einem Isolierstoffkörper (52), beispielhaft einer Aluminiumoxid- oder Aluminiumnitridkeramik, mit einer auf seiner der Grundplatte zugewandten Seite flächigen (53) und auf seiner der Grundplatte (20) abgewandten Seite strukturierten Kupferschicht (54). Diese Kupferschicht (54) stellt die Verbindungsbahnen des Leistungshalbleitermoduls dar. Auf diesen Verbindungsbahnen (54) sind die Bauelemente (56), in der Regel Leistungshalbleiterbauelemente und Sensorikbauteile, angeordnet. Die schaltungsgerechten Verbindungen erfolgen mittels Drahtbondverbindungen (44). FIGS. 2 to 4 show side views of power semiconductor modules according to the prior art the technique (Fig. 2) and according to the invention (Fig. 3, 4), each along a Section A-A (see Fig. 1). In each case a power semiconductor module (10) with one is shown frame-like housing (30) in the side view. On the base plate (20) is arranged a so-called DCB (Direct Copper Bonding) substrate (50). This consists of one Insulating body (52), for example, an aluminum oxide or aluminum nitride ceramic, with one on its the base plate side facing surface (53) and on his the Base plate (20) facing away from structured copper layer (54). This copper layer (54) represents the connecting tracks of the power semiconductor module. On this Connecting tracks (54) are the components (56), as a rule Power semiconductor components and sensor components, arranged. The circuit-fair Connections are made by wire bonds (44).

Weiterhin sind die Hilfsanschlusselemente des jeweiligen Leistungshalbleitermoduls dargestellt. Diese werden gebildet durch Kontaktfedern (60), auf einer Leiterplatte angeordnete Leiterbahnen (72) sowie Anschlussstifte (76). Die Leiterplatte, auf deren Kontaktflächen (78) diese Kontaktfedern enden, ist hier integraler Bestandteil des Deckels (70). Der Deckel selbst ist hier rahmenartig ausgebildet und umschließt die Leiterplatte an ihren Kanten, ohne sie vollständig zu überdecken.Furthermore, the auxiliary connection elements of the respective power semiconductor module shown. These are formed by contact springs (60) on a circuit board arranged conductor tracks (72) and pins (76). The circuit board on which Contact surfaces (78) end these contact springs, here is an integral part of the lid (70). The lid itself is here like a frame and surrounds the circuit board their edges without completely covering them.

Fig. 2 zeigt einen Schnitt entlang der Linie A-A durch das Leistungshalbleitermodul nach dem Stand der Technik gemäß Fig. 1 in Seitenansicht. Die Grundplatte (20) besteht aus einer ebene Kupferplatte, die in Längsrichtung eine konvexe Vorspannung von ca. 2mm bei einer Länge von ca. 15cm aufweist.Fig. 2 shows a section along the line A-A through the power semiconductor module according to the prior art of FIG. 1 in side view. The base plate (20) consists of a flat copper plate, the longitudinal in a convex bias of about 2mm at has a length of about 15cm.

Fig. 3 zeigt einen Schnitt durch ein erfindungsgemäßes Leistungshalbleitermodul in Seitenansicht. Die Längsseiten der Grundplatte (20) sind hier ohne Unterbrechung über einen Abschnitt (24a) zwischen den Ausnehmungen (Fig. 1, 22) jeweils um ca. 90° in Richtung des Modulinneren, also in Richtung der dem Kühlkörper abgewandten Seite der Grundplatte (20), nach oben gebogen. Durch diese Versteifungsstruktur (24) kann eine im Vergleich zum Stand der Technik um mindestens 20% dünnere Grundplatte eingesetzt werden bei gleichzeitiger Erhöhung der Biegesteifigkeit um 60%. Eine konvex vorgespannte Grundplatte behält auch nach der Lötung der Substrate diese konvexe Vorspannung. Die Vorspannung liegt hier ebenfalls wie beim Stand der Technik bei ca. 2mm.FIG. 3 shows a section through a power semiconductor module according to the invention in FIG Side view. The longitudinal sides of the base plate (20) are here without interruption a portion (24a) between the recesses (Fig. 1, 22) each about 90 ° in Direction of the module interior, ie in the direction of the heat sink side facing away from the Base plate (20), bent upwards. By this stiffening structure (24) can be in the Compared to the prior art used by at least 20% thinner base plate while increasing flexural stiffness by 60%. A convexly preloaded Base plate retains this convex bias even after the substrates have been soldered. The Bias is also here as in the prior art at about 2mm.

Fig. 4. zeigt einen Schnitt durch eine weitere Ausgestaltung eines erfindungsgemäßen Leistungshalbleitermoduls in Seitenansicht. Hierbei wird eine Versteifungsstruktur (24) der Grundplatte (20) realisiert, indem in mehreren Abschnitten entlang der Längsseite des Leistungshalbleitermoduls (10) in Längsrichtung verlaufende Prägebereiche (24b) angeordnet sind. Diese Prägebereiche sind derart gestaltet, dass auf der dem Kühlkörper (80) zugewandten Seite das Material der Grundlatte (20), in der Regel Kupfer, partiell in Richtung des Modulinneren gedrückt wird. Hierdurch ergibt sich auf der dem Kühlkörper (80) abgewandten Seite der Grundplatte (20) eine Aufwölbung. Hierdurch wird in dem Bereich der Prägung ein Versteifung in Längsrichtung erreicht. Die Prägebereiche (24b) weisen vorteilhafterweise ein Verhältnis Länge zu Breite von mehr als 4:1 auf. Weiterhin ist es vorteilhaft, wenn die einzelnen Prägebereiche sich gegenseitig zu mehr als 20% überlappen. Zusätzlich weist die Grundplatte (20) die oben beschriebene konvexe Vorspannung auf. Fig. 4. shows a section through a further embodiment of an inventive Power semiconductor module in side view. Here, a stiffening structure (24) of Base plate (20) realized by in several sections along the longitudinal side of the Power semiconductor module (10) longitudinally extending embossing areas (24b) are arranged. These embossed areas are designed such that on the the heat sink (80) side facing the material of the base bar (20), usually copper, partially in Direction of the module interior is pressed. This results in the heat sink (80) opposite side of the base plate (20) has a bulge. This will be in the area of Embossing achieved a stiffening in the longitudinal direction. The embossing areas (24b) have advantageously a ratio of length to width of more than 4: 1. It continues advantageous if the individual embossed areas overlap each other by more than 20%. In addition, the base plate (20) has the above-described convex bias.

Alternativ kann selbstverständlich auch eine einzige Prägung (24b) über die gesamte Länge der Grundplatte (20) in Längsrichtung verlaufend angeordnet sein.Alternatively, of course, a single embossing (24b) over the entire length the base plate (20) extending in the longitudinal direction.

Fig. 5 zeigt eine Grundplatte eines erfindungsgemäßen Leistungshalbleitermoduls in dreidimensionaler Ansicht. Hier ist ein Grundplatte (20, vgl. Fig. 3)) gezeigt, wobei zwischen den für die Schraubverbindung des Leistungshalbleitermoduls (10) mit dem Kühlkörper (80) bestimmten Ausnehmungen (22) an jeder Längsseite durch Einbringen von Aussparungen (26) ein Abschnitt (24a) frei gestanzt. Der Abschnitt 24 ist aus der durch die Grundplatte selbst gegebenen Ebene heraus in Richtung des Substrates gebogen. Weiterhin ist die Grundplatte (20) konvex, wie oben beschrieben, vorgespannt. Diese Ausgestaltung der Grundplatte (20) des erfindungsgemäßen Leistungshalbleiterbauelements erfolgt in bekannter Stanz- Biege- Technik.FIG. 5 shows a base plate of a power semiconductor module according to the invention in FIG three-dimensional view. Here, a base plate (20, see Fig. 3)) is shown, wherein between that for the screw connection of the power semiconductor module (10) to the heat sink (80) certain recesses (22) on each longitudinal side by introducing recesses (26) a section (24a) punched free. The section 24 is out of the through the base plate itself given plane out in the direction of the substrate. Furthermore, the Base plate (20) convex, as described above, biased. This embodiment of Base plate (20) of the power semiconductor component according to the invention takes place in known punching and bending technique.

Claims (9)

Leistungshalbleitermodul (10) mit einer metallischen Grundplatte (20) zur Montage auf einem Kühlkörper (80) bestehend aus einem rahmenartigen Gehäuse (30), einem Deckel (70), nach außen führenden Anschlusselementen für Last- (40, 42, 44) und Hilfskontakte (76) und mit mindestens einem innerhalb des Gehäuses (30) angeordneten elektrisch isolierenden Substrats (50), das seinerseits besteht aus einem Isolierstoffkörper (52) und einer auf dessen der Grundplatte (20) abgewandten ersten Hauptfläche befindlichen Mehrzahl von gegeneinander elektrisch isolierten metallischen Verbindungsbahnen (54), darauf befindlichen und mit diesen Verbindungsbahnen schaltungsgerecht verbundenen Leistungshalbleiterbauelementen (56) sowie mindestens einer auf dessen der Grundplatte (20) zugewandten zweiten Hauptfläche befindlichen metallischen Schicht (53), wobei das Substrat (50) auf der Grundplatte (20) angeordnet ist und wobei die Grundplatte (20) eine Versteifungsstruktur (24) aufweist, die in Längsrichtung der Grundplatte (20) verläuft, wobei diese Versteifungsstruktur (24) aus dem Grundplattenmaterial selbst durch Verformung gebildet ist und aus der durch die Grundplatte gegebenen Ebene herausragt.Power semiconductor module (10) with a metallic base plate (20) for mounting on a heat sink (80) consisting of a frame-like housing (30), a lid (70), outgoing terminal elements for load (40, 42, 44) and auxiliary contacts (76) and at least one disposed within the housing (30) electrically insulating substrate (50), which in turn consists of a Isolierstoffkörper (52) and one on which the base plate (20) facing away from the first main surface A plurality of mutually electrically insulated metallic interconnect tracks (54), on it and associated with these interconnects circuit appropriate Power semiconductor devices (56) and at least one of which the Base plate (20) facing the second main surface located metallic layer (53), wherein the substrate (50) is disposed on the base plate (20), and wherein the Base plate (20) has a stiffening structure (24) in the longitudinal direction of the Base plate (20) extends, said stiffening structure (24) from the Base plate material itself is formed by deformation and out of the through Base plate given plane protrudes. Leistungshalbleitermodul (10) nach Anspruch 1, wobei
die Versteifungsstruktur (24) aus Abschnitten (24a) der Längsseiten der Grundplatte (20) besteht, die aus der durch die Grundplatte selbst gegebenen Ebene heraus in Richtung des Substrates (50) gebogen sind. Power semiconductor module (10) according to claim 1, wherein
the stiffening structure (24) consists of sections (24a) of the longitudinal sides of the base plate (20), which are bent out of the plane given by the base plate itself in the direction of the substrate (50). Leistungshalbleitermodul (10) nach Anspruch 1, wobei
die Grundplatte (20) eine Mehrzahl von Ausnehmungen (22) zur Schraubverbindung des Leistungshalbleitermoduls mit dem Kühlkörper (80) aufweist.Power semiconductor module (10) according to claim 1, wherein
the base plate (20) has a plurality of recesses (22) for screw connection of the power semiconductor module to the heat sink (80). Leistungshalbleitermodul nach Anspruch 1, wobei
die Grundplatte (20) als Stanz- Biege- Teil ausgeführt ist, wobei die Abschnitte (24) zur Versteifung durch Ausnehmungen (26) freigestellt sind.Power semiconductor module according to claim 1, wherein
the base plate (20) is designed as a stamped and bent part, the sections (24) being free to be stiffened by recesses (26). Leistungshalbleitermodul nach Anspruch 1, wobei
die Grundplatte (20) mit der metallischen Schicht (53) des Substrats (50) mittels einer flächig ausgeführten Lötung stoffbündig verbunden ist.Power semiconductor module according to claim 1, wherein
the base plate (20) is flush-connected to the metallic layer (53) of the substrate (50) by means of a flat soldering. Leistungshalbleitermodul nach Anspruch 1, wobei
der jeweilige Abschnitt (24) zur Versteifung über die gesamte Längsseite der Grundplatte (20) verläuft.Power semiconductor module according to claim 1, wherein
the respective section (24) for stiffening extends over the entire longitudinal side of the base plate (20). Leistungshalbleitermodul nach Anspruch 1, wobei
die Abschnitte (24) jeder Seite unterbrochen und sich überlappend angeordnet sind.Power semiconductor module according to claim 1, wherein
the sections (24) of each page are interrupted and overlapped. Leistungshalbleitermodul nach Anspruch 2, wobei
der jeweilige Abschnitt (24) zur Versteifung zwischen Ausnehmungen (22) der Grundplatte (20) für Schraubverbindungen angeordnet und von diesen beabstandet ist.Power semiconductor module according to claim 2, wherein
the respective portion (24) for stiffening between recesses (22) of the base plate (20) is arranged for screw and spaced therefrom. Leistungshalbleitermodul nach Anspruch 2, wobei
der Abschnitt 24 im rechten Winkel zur Grundplatte (20) in dem Kühlkörper (80) abgewandter Richtung gebogen ist.Power semiconductor module according to claim 2, wherein
the section 24 is bent at right angles to the base plate (20) in the direction away from the heat sink (80).
EP04014433A 2003-07-23 2004-06-19 Method of manufacturing a power semiconductor module with a base plate having high bending stiffness Active EP1501127B1 (en)

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EP04014433A Active EP1501127B1 (en) 2003-07-23 2004-06-19 Method of manufacturing a power semiconductor module with a base plate having high bending stiffness

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US (1) US7030491B2 (en)
EP (1) EP1501127B1 (en)
JP (1) JP4264392B2 (en)
KR (1) KR100990527B1 (en)
AT (1) ATE434833T1 (en)
DE (2) DE10333329B4 (en)

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EP1701380A3 (en) * 2005-03-08 2008-12-31 Hitachi, Ltd. Semiconductor power module
WO2009019190A1 (en) * 2007-08-03 2009-02-12 Siemens Aktiengesellschaft Spring contact-connection of electrical contact areas of an electronic component
EP2725609A4 (en) * 2011-06-27 2015-06-17 Rohm Co Ltd Semiconductor module
DE102005063532B3 (en) 2005-02-17 2022-03-10 Infineon Technologies Ag power semiconductor assembly

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DE102005007373B4 (en) 2005-02-17 2013-05-29 Infineon Technologies Ag Power semiconductor device
DE102005037522A1 (en) * 2005-08-09 2007-02-15 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with trough-shaped basic body
DE102005039278A1 (en) * 2005-08-19 2007-02-22 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with line element
DE102006058692A1 (en) * 2006-12-13 2008-06-26 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with contact springs
DE102007010883A1 (en) * 2007-03-06 2008-09-18 Infineon Technologies Ag Power semiconductor device and method for its production
DE102008054932B4 (en) * 2008-12-18 2011-12-01 Infineon Technologies Ag Power semiconductor module with stiffened base plate
DE102009035819A1 (en) 2009-08-01 2011-02-03 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with current-symmetrical load connection element
JP5512377B2 (en) * 2010-04-28 2014-06-04 本田技研工業株式会社 Circuit board
US9929066B1 (en) 2016-12-13 2018-03-27 Ixys Corporation Power semiconductor device module baseplate having peripheral heels
JP7094447B2 (en) * 2019-06-03 2022-07-01 三菱電機株式会社 Power module and power converter

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JPS60216572A (en) * 1984-04-11 1985-10-30 Sanyo Electric Co Ltd Manufacture of heat sink
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DE102005063532B3 (en) 2005-02-17 2022-03-10 Infineon Technologies Ag power semiconductor assembly
EP1701380A3 (en) * 2005-03-08 2008-12-31 Hitachi, Ltd. Semiconductor power module
WO2009019190A1 (en) * 2007-08-03 2009-02-12 Siemens Aktiengesellschaft Spring contact-connection of electrical contact areas of an electronic component
EP2725609A4 (en) * 2011-06-27 2015-06-17 Rohm Co Ltd Semiconductor module
US9129932B2 (en) 2011-06-27 2015-09-08 Rohm Co., Ltd. Semiconductor module

Also Published As

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JP4264392B2 (en) 2009-05-13
DE502004009640D1 (en) 2009-08-06
DE10333329B4 (en) 2011-07-21
KR20050011714A (en) 2005-01-29
ATE434833T1 (en) 2009-07-15
DE10333329A1 (en) 2005-03-10
US7030491B2 (en) 2006-04-18
US20050035445A1 (en) 2005-02-17
KR100990527B1 (en) 2010-10-29
EP1501127A3 (en) 2007-10-24
EP1501127B1 (en) 2009-06-24
JP2005045238A (en) 2005-02-17

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