EP1438442A1 - Procede a deux sources et a chambre unique et appareil de pulverisation - Google Patents

Procede a deux sources et a chambre unique et appareil de pulverisation

Info

Publication number
EP1438442A1
EP1438442A1 EP02776033A EP02776033A EP1438442A1 EP 1438442 A1 EP1438442 A1 EP 1438442A1 EP 02776033 A EP02776033 A EP 02776033A EP 02776033 A EP02776033 A EP 02776033A EP 1438442 A1 EP1438442 A1 EP 1438442A1
Authority
EP
European Patent Office
Prior art keywords
sputtering
target
epitaxial film
getter
pumping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02776033A
Other languages
German (de)
English (en)
Inventor
Roman Chistyakov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of EP1438442A1 publication Critical patent/EP1438442A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Definitions

  • This invention relates to a dual-source, single-chamber method and apparatus for epitaxial sputter deposition of epilayers and high quality films
  • Ultra high vacuum conditions are characterized by a low level of the partial pressure of any contaminating gasses present in the deposition chamber.
  • One embodiment of this invention is an apparatus for film deposition containing (a) a target for sputtering an epitaxial film, (b) a target for sputtering a pumping getter, and (c) a cryogenic shroud interposed between the epitaxial film target and the pumping getter target .
  • Various other embodiments of this invention are (a) an apparatus for creating a vacuum in a sputter deposition chamber containing a cylindrical, cryogenic pumping getter disposed within the sputter deposition chamber; (b) an apparatus for film deposition containing, within a single sputtering chamber, (i) a target for sputtering an epitaxial film, and (ii) a target for sputtering a pumping getter; (c) an apparatus for film deposition containing, within a single sputtering chamber, (i) a target, for sputtering an epitaxial film, that generates contaminants, and (ii) a shroud disposed about the epitaxial film target to reduce the concentration of contaminants within the chamber; and (d) an apparatus for film deposition containing (i) a target for sputtering an epitaxial film, (ii) a target for sputtering a pumping getter, and (iii) a pumping getter inter
  • Various other embodiments of this invention are a method of depositing a film by the use of the apparatus of this invention, such as (a) a method of depositing a film by sputtering, in a single sputtering chamber, (i) an epitaxial film material onto a substrate, and (ii) a pumping getter material onto a pumping getter; (b) a method of reducing contamination in a sputtering chamber by sputtering pumping getter material onto a cryogenic pumping getter disposed within the sputter deposition chamber; or (c) a method of reducing contamination in a sputtering chamber by sputtering pumping getter material onto a pumping getter disposed between a target containing the pumping getter material and a target containing material for sputtering an epitaxial film.
  • Fig. 1 is a cross sectional view of a film deposition device.
  • This invention provides an improved approach for growing high quality thick epilayers using sputtering. This method is particularly useful in the situation in which the sputtering process time is so long that the pumping speed of an ultra high vacuum pump could change while sputtering is on-going.
  • a sputtering process is used in this invention. This approach of this invention typically reduces pressure to about 10 "11 to about 10 "12 Torr.
  • a film of a reactive material (a pumping getter) is formed using a sputtering process.
  • the gas used to sputter the getter may be the same as the gas also used to sputter a desired product such as an epitaxial film.
  • a typical example of such gas is argon .
  • a sputtering process for growing an epitaxial film and a separate sputtering process for creating a film for a pumping getter are provided in the same sputtering chamber.
  • a sputtering chamber is therefore proved herein that includes two sputtering sources. As shown in Fig. 1, the first sputtering source 2 is for the sputtering of an epitaxial film.
  • the second sputtering source 4 is for the sputtering of reactive materials, such as titanium chromium or titanium-molybdenum, to create a getter.
  • the first sputtering source and substrate 6 are surrounded by a cryogenic shroud 8, such as a shroud cooled by liquid nitrogen or helium.
  • the second sputtering source is mounted outside of the cryogenic shroud.
  • the reactive material functioning as a pumping getter, effectively absorbs contaminant gases such as H 2 , N 2 , CO, C0 2 , water vapor and the like.
  • the purity and overall quality of epitaxial films deposited is substantially higher (relative to otherwise similar films produced by other or prior art processes) .
  • the pumping speed of the getter film, which may be sputtered simultaneously with the epitaxial film, is substantially constant .
  • the cryogenic shroud is typically a stainless steel cylinder, filled with a coolant such as liquid nitrogen, that is open on the ends. Contaminant gases may flow out of the open ends. Shields protect the open ends and prevent penetration of the sputtered getter material from entering the space enclosed by the interior of the cylindrically-shaped shroud.
  • the ionized sputtering gas that is utilized to sputter an epitaxial film within the shroud creates a high gas pressure on the inside compared with the outside. This condition also helps prevent the sputtered getter material from penetrating inside the shroud and contaminating the epitaxial film.
  • the sputtering chamber of this device includes two sputtering sources .
  • the first sputtering source is for the sputtering of an epitaxial film.
  • the second sputtering source is for the sputtering of reactive materials such as titanium to create getters. This is the getter pump.
  • the sputtering source for the getter material deposition might be a typical RF (radio frequency) diode sputtering source, or AC, such as at about 13.56 MHz.
  • the getter target thickness must be large enough to provide continuous and simultaneous sputtering of the getter material during the sputtering of the epitaxial film.
  • the first sputtering source and the substrate are surrounded by a cryogenic shroud, such as a liquid nitrogen shroud.
  • the second sputtering source is mounted outside of the cryogenic shroud.
  • the sputtering of said getter occurs on the outside surface of the cryogenic shroud.
  • the getter effectively absorbs reactive, contaminant gases such as H 2 , N 2 , CO, C0 2 , and water vapor that affect the quality of the growing epilayer.
  • a set of shields prevents penetration of the getter material atoms inside the cryogenic shroud, and helps keep the growing epitaxial film free of getter material contamination.
  • the ionized sputtering gas that is utilized to sputter an epitaxial film within the shroud creates a high gas pressure on the inside compared with the outside. This condition also helps prevent the sputtered getter material from penetrating inside the shroud and contaminating the epitaxial film.
  • the first sputtering source 2 and the second sputtering source 4 are preferably, but not necessarily, oriented at approximately ninety degrees with respect to each other, as shown in Figure 1. This arrangement may be desirable inasmuch as the getter material typically deposits on the outside of the shroud, the epitaxial film material deposits on the substrate, the substrate is typically placed to be essentially perpendicular to the walls of the shroud.
  • this invention involves an apparatus for film deposition containing (a) a target for sputtering an epitaxial film, (b) a target for sputtering a pumping getter, and (c) a cryogenic shroud interposed between the epitaxial film target and the pumping getter target.
  • the cryogenic shroud may be a pumping getter, or the pumping getter may be sputter deposited on the cryogenic shroud.
  • the cryogenic shroud may be a metallic, cylindrically shaped vessel, and may be cooled by liquid nitrogen.
  • the pumping getter target may be a ring, band, coil or collar disposed about the cryogenic shroud, and the material of the pumping getter target may be titanium.
  • the epitaxial film target and the pumping getter target may be located in a single sputtering chamber, and the epitaxial film may have a thickness of greater than one micrometer.
  • the invention provides (a) an apparatus for creating a vacuum in a sputter deposition chamber containing a cylindrical, cryogenic pumping getter disposed within the sputter deposition chamber; (b) an apparatus for film deposition containing, within a single sputtering chamber, (i) a target for sputtering an epitaxial film, and (ii) a target for sputtering a pumping getter; (c) an apparatus for film deposition containing, within a single sputtering chamber, (i) a target, for sputtering an epitaxial film, that generates contaminants, and (ii) a shroud disposed about the epitaxial film target to reduce the concentration of contaminants within the chamber; or (d) an apparatus for film deposition containing (i) a target for sputtering an epitaxial film, (ii) a target for sputtering a pumping getter, and (iii) a pumping getter interposed between
  • the invention also provides a method of depositing a film by the use of the apparatus of this invention, such as (a) a method of depositing a film by sputtering, in a single sputtering chamber, (i) an epitaxial film material onto a substrate, and (ii) a pumping getter material onto a pumping getter; (b) a method of reducing contamination in a sputtering chamber by sputtering pumping getter material onto a cryogenic pumping getter disposed within the sputter deposition chamber; or (c) a method of reducing contamination in a sputtering chamber by sputtering pumping getter material onto a pumping getter disposed between a target containing the pumping getter material and a target containing material for sputtering an epitaxial film.
  • the epitaxial film and pumping getter may be sputtered simultaneously, and the deposition may occur for at least one hour.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention se rapporte à un procédé à deux sources et à chambre unique et à un appareil de pulvérisation épitaxiale d'épicouches et de films haute qualité. L'appareil de mise en oeuvre du procédé comprend une première source de pulvérisation (2) permettant de pulvériser un film épitaxial sur un substrat (6) et une seconde source de pulvérisation (4) destinée à pulvériser des matériaux réactifs afin de créer un getter sur un protecteur cryogénique (8). La première source de pulvérisation 4 et le substrat (6) sont entourés par le protecteur cryogénique (8).
EP02776033A 2001-09-27 2002-09-27 Procede a deux sources et a chambre unique et appareil de pulverisation Withdrawn EP1438442A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32533201P 2001-09-27 2001-09-27
US325332P 2001-09-27
PCT/US2002/030867 WO2003027352A1 (fr) 2001-09-27 2002-09-27 Procede a deux sources et a chambre unique et appareil de pulverisation

Publications (1)

Publication Number Publication Date
EP1438442A1 true EP1438442A1 (fr) 2004-07-21

Family

ID=23267444

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02776033A Withdrawn EP1438442A1 (fr) 2001-09-27 2002-09-27 Procede a deux sources et a chambre unique et appareil de pulverisation

Country Status (5)

Country Link
EP (1) EP1438442A1 (fr)
JP (1) JP2005504172A (fr)
KR (1) KR20040044994A (fr)
CN (1) CN1561405A (fr)
WO (1) WO2003027352A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8057856B2 (en) * 2004-03-15 2011-11-15 Ifire Ip Corporation Method for gettering oxygen and water during vacuum deposition of sulfide films
CN100560786C (zh) * 2006-06-02 2009-11-18 鸿富锦精密工业（深圳）有限公司 溅镀装置及溅镀方法
CN101492811B (zh) * 2009-02-20 2012-01-25 电子科技大学 一种自吸气真空镀膜方法
CN101886248B (zh) * 2009-05-15 2013-08-21 鸿富锦精密工业（深圳）有限公司 溅镀式镀膜装置
EP2625706B1 (fr) * 2010-10-05 2016-04-20 Oerlikon Advanced Technologies AG Conditionnement in situ pour le traitement sous vide de substrats en polymère

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1301653A (fr) * 1969-01-02 1973-01-04
US4022939A (en) * 1975-12-18 1977-05-10 Western Electric Company, Inc. Synchronous shielding in vacuum deposition system
DE3569265D1 (en) * 1985-01-17 1989-05-11 Ibm Deutschland Process for the production of low-resistance contacts
JPH06192829A (ja) * 1992-04-15 1994-07-12 Asahi Glass Co Ltd 薄膜作製装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO03027352A1 *

Also Published As

Publication number Publication date
KR20040044994A (ko) 2004-05-31
WO2003027352A1 (fr) 2003-04-03
JP2005504172A (ja) 2005-02-10
CN1561405A (zh) 2005-01-05

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