EP1393603A1 - Method and device for structuring printed circuit boards - Google Patents

Method and device for structuring printed circuit boards

Info

Publication number
EP1393603A1
EP1393603A1 EP02740352A EP02740352A EP1393603A1 EP 1393603 A1 EP1393603 A1 EP 1393603A1 EP 02740352 A EP02740352 A EP 02740352A EP 02740352 A EP02740352 A EP 02740352A EP 1393603 A1 EP1393603 A1 EP 1393603A1
Authority
EP
European Patent Office
Prior art keywords
laser
wavelength
conductor structures
field size
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02740352A
Other languages
German (de)
French (fr)
Inventor
Hubert De Steur
Marcel Heerman
Eddy Roelants
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Via Mechanics Ltd
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP1393603A1 publication Critical patent/EP1393603A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/027Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061Etching masks
    • H05K3/062Etching masks consisting of metals or alloys or metallic inorganic compounds
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0263High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0263High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board
    • H05K1/0265High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board characterized by the lay-out of or details of the printed conductors, e.g. reinforced conductors, redundant conductors, conductors having different cross-sections
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/09654Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/09727Varying width along a single conductor; Conductors or pads having different widths
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107Using laser light
    • H05K2203/108Using a plurality of lasers or laser light with a plurality of wavelengths
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits

Definitions

  • the invention relates to a method and a device for patterning of printed circuit boards having coarse conductor structures and with at least one area with fine conductor ⁇ structures, deposited on an electrically insulating substrate, a metal layer and is exposed from this metal layer by partially etching the desired conductor pattern.
  • EP 0 062 300 A2 already discloses a method for producing printed circuit boards, in which a metallic etch resist applied to the entire surface of a metal layer is selectively removed again in the areas not corresponding to the conductor structures by means of laser radiation and then the conductor structures are etched off in such a way exposed metal layer are formed.
  • a method for producing printed circuit boards in which a metal layer and a metallic or organic etching resist layer are applied in succession to a substrate, whereupon this etching resist layer is removed by means of laser radiation in the areas immediately adjacent to the later conductor track pattern and the metal layer thus exposed is etched away in such a way that the conductor track pattern and island regions of the metal layer electrically isolated therefrom by etching trenches remain on the substrate.
  • the structuring by means of laser radiation can be carried out quickly since the areas of the etching resist layer to be removed need only have a small width and the larger areas remain between two conductor tracks.
  • WO 00/04750 Al is also a process for the manufacture ⁇ development of coarse conductor structures and fine conductor structures described, an etching resist is patterned by photolithography in which, in the region of the coarse conductor structures currency rend in the region of the fine conductor structures an etching resist using a Laser beam is structured.
  • the etch resist layers structured in this way in different ways are then etched in a known manner.
  • the aim of the present invention is to provide a method and a device with which printed circuit boards with coarse and fine conductor structures can be structured in the simplest and most economical manner. According to the invention, this goal is achieved with the following process steps:
  • a metal layer is applied to an electrically insulating substrate, b) an etching resist layer is applied to the metal layer, c) by partially removing the etching resist layer (61) with a first laser beam (14) of a predetermined first wavelength and one through a first imaging unit
  • Wavelength and a second processing field size (4) predetermined by a second imaging unit (23) the contours (63) of the fine conductor structures nailge ⁇ sets, wherein the second wavelength is less than the he ⁇ ste wavelength and / or the second field size (4) is smaller than the first field size (3), e) by etching the exposed metal areas (62,67), the coarse and the fine conductor structures (31,41) are generated simultaneously and momentarily ⁇ f) by removing the remaining resist layer to expose the surfaces of the conductor structures.
  • the invention therefore relates to producing both coarse and fine conductor structures using the same method steps, namely by structuring an etching resist layer and subsequent etching, but by taking into account the choice of different lasers to take account of the different conductor structures and correspondingly different insulation distances, and thereby for the respective structure to achieve the optimal processing speed.
  • the invention makes use of the knowledge that a laser beam with a short wavelength and a short focal length can produce fine structures precisely in a small processing field, but is too slow for the processing of wider structures and larger fields for economical operation, while a laser beam with a long wavelength and a setting for a large focal length can process wider structures in a large processing field at a considerably higher speed.
  • the first laser has a wavelength between 1064 nm and 355 nm, preferably 1064 nm
  • the second laser has a wavelength between 532 and 266 nm, preferably 532 or 355 nm, the wavelength of the first laser being in any case greater than that of the second laser.
  • the beam of the first laser is focused over a larger focal length than the beam of the second laser, whereby the first laser covers a larger processing area than the second.
  • a device for the structuring of the managerial plates with a size coarse conductor structures and with at least ei ⁇ nem area with fine conductor structures has the following shopping ⁇ male to: a) a receptacle for positioning a printed circuit board, b) a first laser having a deflecting optical system and a Abbil- unit with a first focal length that is above the
  • PCB surface can be positioned such that it is able to irradiate a first processing field size
  • a second laser with deflection optics and an imaging unit with a second focal length which can irradiate a second processing field size, the second laser having a greater wavelength than the first laser and / or the second focal length and the second field size are smaller than the first focal length and the first field size
  • a control device to use the first laser to produce large fields of the circuit board with coarse conductor structures and smaller fields of the circuit board with the second laser to irradiate finer conductor structures.
  • FIG. 1 shows the schematic arrangement of two lasers for the method according to the invention
  • FIGS. 3 to 6 show a section of a printed circuit board - in a sectional view - in the individual process stages in the production of the coarse and fine conductor structures according to the invention
  • Figure 7 is a plan view of the wiring pattern according Fi gur ⁇ 6,
  • FIG. 8 shows a diagram to illustrate the isolation trenches that can be achieved with different lasers depending on different layer thicknesses and different field sizes between the conductor structures and the achievable processing speeds.
  • FIG. 1 An arrangement is shown schematically in FIG. 1 as is suitable for carrying out the method according to the invention.
  • Two lasers namely a first laser 11 and a second laser 21, are arranged above a printed circuit board 1, which lies in a processing area on a table 10 which can be moved in its plane in the x and y directions.
  • the first laser 11 generates a first laser beam 14 via deflection optics 12 and a lens arrangement 13, which is focused on the surface of the printed circuit board 1 and can sweep over a first, relatively large processing field 3 due to a relatively large first focal length.
  • the second laser 21 generates a second laser beam 24 via its deflecting optics 22 and the lens arrangement 23, which due to the smaller focal length 25 is able to sweep over a smaller processing field 4.
  • Both lasers 11 and 21 have a different wavelength.
  • the laser 11 is a neodymium YAG laser with a wavelength of 1024 nm
  • the laser 21 can be a neodymium vanadate laser with a wavelength of 532 or 355 nm.
  • Both the two lasers 11 and 21 and the table are controlled by a central control unit 9.
  • FIG. 2 schematically shows a large machining field 3 with coarse conductor track structures 31 and a small machining field 4 with fine conductor structures 41 arranged within the machining field 3.
  • both the coarse structures 31 and the fine structures 41 are created with the aid of the two lasers 11 and 21 method according to the invention obtained.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Laser Beam Processing (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

The invention relates to a method in which both regions (3) of a printed circuit board (1), which are provided for rough conductor structures (31), as well as regions, which are provided for finer conductor structures (41) of the printed circuit board (1), are each structured by means of laser machining. To this end both regions (3, 4) are firstly coated with a continuous metallization layer and covered with an etch resist. The rough conductor structures are predefined using a laser beam (14) of a larger wavelength by exposing the unnecessary metal surfaces. In addition, the fine conductor structures are pre-formed by machining the etch resist with a laser beam (24) of a smaller wavelength. In a shared etching process, all exposed surface regions of the metal layer are subsequently etched away so that only the rough and fine conductor track structures covered by the remaining etch resist remain. The surfaces of the produced conductor tracks are exposed by removing the remaining etch resist.

Description

Beschreibungdescription
Verfahren und Einrichtung zur Strukturierung von Leiterplat¬ ten ¬ th Method and apparatus for structuring printed
Die Erfindung betrifft ein Verfahren sowie eine Einrichtung zur Strukturierung von Leiterplatten mit groben Leiterstrukturen und mit mindestens einem Bereich mit feinen Leiter¬ strukturen, wobei auf ein elektrisch isolierendes Substrat eine Metallschicht aufgebracht und aus dieser Metallschicht durch partielles Ätzen die gewünschte Leiterstruktur freigelegt wird.The invention relates to a method and a device for patterning of printed circuit boards having coarse conductor structures and with at least one area with fine conductor ¬ structures, deposited on an electrically insulating substrate, a metal layer and is exposed from this metal layer by partially etching the desired conductor pattern.
Aus der EP 0 062 300 A2 ist bereits ein Verfahren zur Her- Stellung von Leiterplatten bekannt, bei welchem ein ganzflächig auf eine Metallschicht aufgebrachtes metallisches Atzresist mittels Laserstrahlung selektiv in den nicht den Leiterstrukturen entsprechenden Bereichen wieder entfernt wird und danach die Leiterstrukturen durch Abätzen der derart freige- legten Metallschicht gebildet werden.EP 0 062 300 A2 already discloses a method for producing printed circuit boards, in which a metallic etch resist applied to the entire surface of a metal layer is selectively removed again in the areas not corresponding to the conductor structures by means of laser radiation and then the conductor structures are etched off in such a way exposed metal layer are formed.
Aus der DE 41 31 065 AI ist weiterhin ein Verfahren zur Herstellung von Leiterplatten bekannt, bei welchem auf ein Substrat nacheinander eine Metallschicht und eine metallische oder organische Ätzresistschicht aufgebracht werden, worauf diese Ätzresistschicht mittels Laserstrahlung in den unmittelbar an das spätere Leiterbahnmuster angrenzenden Bereichen entfernt und die dadurch freigelegte Metallschicht derart weggeätzt wird, daß das Leiterbahnmuster und durch Ätzgräben elektrisch davon isolierte Inselbereiche der Metallschicht auf dem Substrat verbleiben. Die Strukturierung mittels Laserstrahlung kann rasch vorgenommen werden, da die zu entfernenden Bereiche der Ätzresistschicht nur eine geringe Breite aufweisen müssen und die größeren Flächen zwischen zwei Lei- terbahnen stehen bleiben. In der WO 00/04750 AI ist ferner ein Verfahren zur Herstel¬ lung von groben Leiterstrukturen und feinen Leiterstrukturen beschrieben, bei dem im Bereich der groben Leiterstrukturen ein Atzresist mittels Fotolithografie strukturiert wird, wäh- rend im Bereich der feinen Leiterstrukturen ein Atzresist mit Hilfe eines Laserstrahls strukturiert wird. Die derart auf verschiedene Weise strukturierten Ätzresistschichten werden dann in bekannter Weise geätzt. Zwar ist dort die Möglichkeit angesprochen, für die verschiedenen Strukturierungsverfahren mit dem gleichen tzresist zu arbeiten und sowohl die groben als auch die feinen Leiterstrukturen in einem Arbeitsgang zu ätzen, doch ergibt sich dabei kein optimaler Arbeitsablauf, da das gewöhnlich für die Laserstrukturierung verwendete metallische Atzresist (zum Beispiel Zinn) für das Fotolithogra- fieverfahren weniger gut geeignet ist.From DE 41 31 065 A1, a method for producing printed circuit boards is also known, in which a metal layer and a metallic or organic etching resist layer are applied in succession to a substrate, whereupon this etching resist layer is removed by means of laser radiation in the areas immediately adjacent to the later conductor track pattern and the metal layer thus exposed is etched away in such a way that the conductor track pattern and island regions of the metal layer electrically isolated therefrom by etching trenches remain on the substrate. The structuring by means of laser radiation can be carried out quickly since the areas of the etching resist layer to be removed need only have a small width and the larger areas remain between two conductor tracks. In WO 00/04750 Al is also a process for the manufacture ¬ development of coarse conductor structures and fine conductor structures described, an etching resist is patterned by photolithography in which, in the region of the coarse conductor structures currency rend in the region of the fine conductor structures an etching resist using a Laser beam is structured. The etch resist layers structured in this way in different ways are then etched in a known manner. Although there is the possibility of working with the same tzresist for the different structuring processes and etching both the coarse and the fine conductor structures in one operation, this does not result in an optimal workflow, since the metallic etching resist usually used for laser structuring ( for example tin) is less suitable for the photolithography process.
Ziel der vorliegenden Erfindung ist es, ein Verfahren und eine Einrichtung anzugeben, womit Leiterplatten mit groben und feinen Leiterstrukturen in möglichst einfacher und wirt- schaftlicher Weise strukturiert werden können. Erfindungsgemäß wird dieses Ziel mit folgenden Verfahrensschritten erreicht:The aim of the present invention is to provide a method and a device with which printed circuit boards with coarse and fine conductor structures can be structured in the simplest and most economical manner. According to the invention, this goal is achieved with the following process steps:
a) auf ein elektrisch isolierendes Substrat wird eine Metall- schicht aufgebracht, b) auf die Metallschicht wird eine Ätzresistschicht aufgetragen, c) durch partielles Abtragen der Ätzresistschicht (61) mit einem ersten Laserstrahl (14) einer vorgegebenen ersten Wellenlänge und einer durch eine erste Abbildungseinheita) a metal layer is applied to an electrically insulating substrate, b) an etching resist layer is applied to the metal layer, c) by partially removing the etching resist layer (61) with a first laser beam (14) of a predetermined first wavelength and one through a first imaging unit
(13) vorgegebenen ersten Bearbeitungs-Feldgröße (3) werden die Konturen (62) der vorgesehenen groben Leiterstrukturen (31) freigelegt, d) durch partielles Abtragen der Ätzresistschicht (61) mit einem zweiten Laserstrahl (24) einer vorgegebenen zweiten(13) predetermined first machining field size (3), the contours (62) of the coarse conductor structures (31) provided are exposed, d) by partially removing the etching resist layer (61) with a second laser beam (24) of a predetermined second
Wellenlänge und einer durch eine zweite Abbildungseinheit (23) vorgegebenen zweiten Bearbeitungs-Feldgröße (4) wer- den die Konturen (63) der feinen Leiterstrukturen freige¬ legt, wobei die zweite Wellenlänge kleiner ist als die er¬ ste Wellenlänge und/oder die zweite Feldgröße (4) kleiner ist als die erste Feldgröße (3) , e) durch Ätzen der freigelegten Metallbereiche (62,67) werden die groben und die feinen Leiterstrukturen (31,41) gleich¬ zeitig erzeugt und f) durch Abtragen der restlichen Ätzresistschicht werden die Oberflächen der Leiterstrukturen freigelegt.Wavelength and a second processing field size (4) predetermined by a second imaging unit (23) the contours (63) of the fine conductor structures freige ¬ sets, wherein the second wavelength is less than the he ¬ ste wavelength and / or the second field size (4) is smaller than the first field size (3), e) by etching the exposed metal areas (62,67), the coarse and the fine conductor structures (31,41) are generated simultaneously and momentarily ¬ f) by removing the remaining resist layer to expose the surfaces of the conductor structures.
Bei der Erfindung geht es also darum, sowohl grobe als auch feine Leiterstrukturen mit gleichen Verfahrensschritten, nämlich durch Strukturierung einer Ätzresistschicht und anschließendes Ätzen zu erzeugen, jedoch durch die Wahl unter- schiedlicher Laser den unterschiedlichen Leiterstrukturen und entsprechend unterschiedlichen Isolierabständen Rechnung zu tragen und dabei für die jeweilige Struktur die optimale Bearbeitungsgeschwindigkeit zu erzielen. Dabei macht sich die Erfindung die Erkenntnis zunutze, daß ein Laserstrahl mit ge- ringer Wellenlänge und kurzer Brennweite in einem kleinen Bearbeitungsfeld feine Strukturen genau erzeugen kann, aber für die Bearbeitung breiterer Strukturen und größerer Felder für eine wirtschaftliche Arbeitsweise zu langsam ist, während ein Laserstrahl mit langer Wellenlänge und einer Einstellung auf große Brennweite breitere Strukturen in einem großen Bearbeitungsfeld mit erheblich größerer Geschwindigkeit bearbeiten kann. In einer vorteilhaften Ausgestaltung des er indungsge- mäßen Verfahrens ist vorgesehen, daß für die Bearbeitung der groben Leiterstrukturen der erste Laser eine Wellenlänge zwi- sehen 1064 nm und 355 nm, vorzugsweise 1064 nm, und der zweite Laser eine Wellenlänge zwischen 532 und 266 nm, vorzugsweise 532 oder 355 nm, aufweist, wobei die Wellenlänge des ersten Lasers in jedem Fall größer als die des zweiten Lasers ist. Weiterhin ist in der bevorzugten Ausgestaltung des er- findungsgemäßen Verfahrens vorgesehen, daß der Strahl des ersten Lasers über eine größere Brennweite fokussiert wird als der Strahl des zweiten Lasers, wodurch der erste Laser eine größere Bearbeitungsfläche überstreicht als der zweite.The invention therefore relates to producing both coarse and fine conductor structures using the same method steps, namely by structuring an etching resist layer and subsequent etching, but by taking into account the choice of different lasers to take account of the different conductor structures and correspondingly different insulation distances, and thereby for the respective structure to achieve the optimal processing speed. The invention makes use of the knowledge that a laser beam with a short wavelength and a short focal length can produce fine structures precisely in a small processing field, but is too slow for the processing of wider structures and larger fields for economical operation, while a laser beam with a long wavelength and a setting for a large focal length can process wider structures in a large processing field at a considerably higher speed. In an advantageous embodiment of the method according to the invention, it is provided that for processing the rough conductor structures, the first laser has a wavelength between 1064 nm and 355 nm, preferably 1064 nm, and the second laser has a wavelength between 532 and 266 nm, preferably 532 or 355 nm, the wavelength of the first laser being in any case greater than that of the second laser. Furthermore, it is provided in the preferred embodiment of the method according to the invention that the beam of the first laser is focused over a larger focal length than the beam of the second laser, whereby the first laser covers a larger processing area than the second.
Eine erfindungsgemäße Einrichtung zur Strukturierung von Lei- terplatten mit groben Leiterstrukturen und mit mindestens ei¬ nem Bereich mit feinen Leiterstrukturen weist folgende Merk¬ male auf: a) eine Aufnahme zur Positionierung einer Leiterplatte, b) einen ersten Laser mit einer Ablenkoptik und einer Abbil- dungseinheit mit einer ersten Brennweite, die über derA device according to the invention for the structuring of the managerial plates with a size coarse conductor structures and with at least ei ¬ nem area with fine conductor structures has the following shopping ¬ male to: a) a receptacle for positioning a printed circuit board, b) a first laser having a deflecting optical system and a Abbil- unit with a first focal length that is above the
Leiterplattenoberfläche derart positionierbar ist, daß sie eine erste Bearbeitungsfeldgröße zu bestrahlen vermag, c) einen zweiten Laser mit einer Ablenkoptik und einer Abbildungseinheit mit einer zweiten Brennweite, die eine zweite Bearbeitungsfeldgröße zu bestrahlen vermag, wobei der zweite Laser eine größere Wellenlänge als der erste Laser aufweist und/oder die zweite Brennweite sowie die zweite Feldgröße kleiner sind als die erste Brennweite und die erste Feldgröße, und d) eine Steuerungseinrichtung, um mit dem ersten Laser jeweils große Felder der Leiterplatte mit groben Leiterstrukturen und mit dem zweiten Laser kleinere Felder der Leiterplatte mit feineren Leiterstrukturen zu bestrahlen.PCB surface can be positioned such that it is able to irradiate a first processing field size, c) a second laser with deflection optics and an imaging unit with a second focal length, which can irradiate a second processing field size, the second laser having a greater wavelength than the first laser and / or the second focal length and the second field size are smaller than the first focal length and the first field size, and d) a control device to use the first laser to produce large fields of the circuit board with coarse conductor structures and smaller fields of the circuit board with the second laser to irradiate finer conductor structures.
Die Erfindung wird nachfolgend an Ausführungsbeispielen anhand der Zeichnung näher erläutert.The invention is explained in more detail below using exemplary embodiments with reference to the drawing.
Es zeigtIt shows
Figur 1 die schematische Anordnung von zwei Lasern für das erfindungsgemäße Verfahren,FIG. 1 shows the schematic arrangement of two lasers for the method according to the invention,
Figur 2 eine Draufsicht auf eine schematisch dargestellte Leiterplatte mit groben und feinen Leiterstrukturen, Figur 3 bis 6 einen Ausschnitt aus einer Leiterplatte - in Schnittdarstellung - in den einzelnen Verfahrensstadien bei der erfindungsgemäßen Herstellung der groben und feinen Leiterstrukturen, Figur 7 eine Draufsicht auf die Leiterbahnstruktur gemäß Fi¬ gur 6,2 shows a plan view of a schematically illustrated printed circuit board with coarse and fine conductor structures, FIGS. 3 to 6 show a section of a printed circuit board - in a sectional view - in the individual process stages in the production of the coarse and fine conductor structures according to the invention, Figure 7 is a plan view of the wiring pattern according Fi gur ¬ 6,
Figur 8 ein Diagramm zur Darstellung der mit verschiedenen Lasern in Abhängigkeit von verschiedenen Schichtdicken und verschiedenen Feldgrößen erreichbaren Isolationsgräben zwischen den Leiterstrukturen sowie der erreichbaren Bearbeitungsgeschwindigkeiten.FIG. 8 shows a diagram to illustrate the isolation trenches that can be achieved with different lasers depending on different layer thicknesses and different field sizes between the conductor structures and the achievable processing speeds.
In Figur 1 ist schematisch eine Anordnung gezeigt, wie sie für die Durchführung des erfindungsgemäßen Verfahrens geeignet ist. Über einer Leiterplatte 1, die in einer Bearbeitungsfläche auf einem in seiner Ebene in x- und y-Richtung verfahrenbaren Tisch 10 liegt, sind zwei Laser, nämlich ein erster Laser 11 und ein zweiter Laser 21 angeordnet. Der er- ste Laser 11 erzeugt über eine Ablenkoptik 12 und eine Linsenanordnung 13 einen ersten Laserstrahl 14, der auf die Fläche der Leiterplatte 1 fokussiert ist und aufgrund einer relativ großen ersten Brennweite ein erstes, relativ großes Bearbeitungsfeld 3 überstreichen kann. Der zweite Laser 21 er- zeugt über seine Ablenkoptik22 und die Linsenanordnung 23 einen zweiten Laserstrahl 24, der aufgrund der geringeren Brennweite 25 ein kleineres Bearbeitungsfeld 4 zu überstreichen vermag. Beide Laser 11 und 21 weisen eine unterschiedliche Wellenlänge auf. Beispielsweise ist der Laser 11 ein Neo- dymium-YAG-Laser mit einer Wellenlänge von 1024 nm, während der Laser 21 ein Neodymium-Vanadat-Laser mit einer Wellenlänge von 532 oder 355 nm sein kann. Sowohl die beiden Laser 11 und 21 als auch der Tisch werden von einer zentralen Steuerungseinheit 9 gesteuert.An arrangement is shown schematically in FIG. 1 as is suitable for carrying out the method according to the invention. Two lasers, namely a first laser 11 and a second laser 21, are arranged above a printed circuit board 1, which lies in a processing area on a table 10 which can be moved in its plane in the x and y directions. The first laser 11 generates a first laser beam 14 via deflection optics 12 and a lens arrangement 13, which is focused on the surface of the printed circuit board 1 and can sweep over a first, relatively large processing field 3 due to a relatively large first focal length. The second laser 21 generates a second laser beam 24 via its deflecting optics 22 and the lens arrangement 23, which due to the smaller focal length 25 is able to sweep over a smaller processing field 4. Both lasers 11 and 21 have a different wavelength. For example, the laser 11 is a neodymium YAG laser with a wavelength of 1024 nm, while the laser 21 can be a neodymium vanadate laser with a wavelength of 532 or 355 nm. Both the two lasers 11 and 21 and the table are controlled by a central control unit 9.
Figur 2 zeigt schematisch ein großes Bearbeitungsfeld 3 mit groben Leiterbahnstrukturen 31 sowie ein innerhalb des Bearbeitungsfeldes 3 angeordnetes kleines Bearbeitungsfeld 4 mit feinen Leiterstrukturen 41. Erfindungsgemäß werden sowohl die groben Strukturen 31 als auch die feinen Strukturen 41 mit Hilfe der beiden Laser 11 und 21 nach dem erfindungsgemäßen Verfahren gewonnen. CO co > N3 P1 P1 I o Cn O Cπ o CnFIG. 2 schematically shows a large machining field 3 with coarse conductor track structures 31 and a small machining field 4 with fine conductor structures 41 arranged within the machining field 3. According to the invention, both the coarse structures 31 and the fine structures 41 are created with the aid of the two lasers 11 and 21 method according to the invention obtained. CO co> N3 P 1 P 1 I o Cn O Cπ o Cn
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Claims

Patentansprüche claims
1. Verfahren zur Strukturierung von Leiterplatten (1) mit groben Leiterstrukturen (31) und mit mindestens einem Bereich (4) mit feinen Leiterstrukturen (41) mit folgenden Schritten: a) auf ein elektrisch isolierendes Substrat (7) wird eine Me¬ tallschicht (6) aufgebracht, b) auf die Metallschicht (6) wird eine Ätzresistschicht (61) aufgetragen, c) durch partielles Abtragen der Ätzresistschicht (61) mit einem ersten Laserstrahl (14) einer vorgegebenen ersten Wellenlänge und einer durch eine erste Abbildungseinheit (13) vorgegebenen ersten Bearbeitungs-Feldgröße (3) werden die Konturen (62) der vorgesehenen groben Leiterstrukturen (31) freigelegt, d) durch partielles Abtragen der Ätzresistschicht (61) mit einem zweiten Laserstrahl (24) einer vorgegebenen zweiten Wellenlänge und einer durch eine zweite Abbildungseinheit1. A method for patterning of printed circuit boards (1) having coarse conductor structures (31) and with at least one region (4) having fine conductor structures (41) comprising the steps: a) on an electrically insulating substrate (7) is a Me ¬ tallschicht ( 6) applied, b) an etching resist layer (61) is applied to the metal layer (6), c) by partially removing the etching resist layer (61) with a first laser beam (14) of a predetermined first wavelength and one through a first imaging unit (13) Given the first machining field size (3), the contours (62) of the coarse conductor structures (31) provided are exposed, d) by partially removing the etching resist layer (61) with a second laser beam (24) with a predetermined second wavelength and with a second imaging unit
(23) vorgegebenen zweiten Bearbeitungs-Feldgröße (4) wer- den die Konturen (63) der feinen Leiterstrukturen freigelegt, wobei die zweite Wellenlänge kleiner ist als die erste Wellenlänge und/oder die zweite Feldgröße (4) kleiner ist als die erste Feldgröße (3) , e) durch Ätzen der freigelegten Metallbereiche (62,67) werden die groben und die feinen Leiterstrukturen (31,41) gleichzeitig erzeugt und f) durch Abtragen der restlichen Ätzresistschicht (61) werden die Oberflächen der Leiterstrukturen (31,41) freigelegt.(23) given the second machining field size (4), the contours (63) of the fine conductor structures are exposed, the second wavelength being smaller than the first wavelength and / or the second field size (4) being smaller than the first field size ( 3), e) the coarse and fine conductor structures (31, 41) are produced simultaneously by etching the exposed metal regions (62, 67) and f) the surfaces of the conductor structures (31, 41) are removed by removing the remaining etching resist layer (61) exposed.
2. Verfahren nach Anspruch 1, d a d u r c h g e k e n n z e i c h n e t , daß der Laserstrahl (14) des ersten Lasers (11) eine Wellenlänge zwischen 1064 nm und 355 nm und der Laserstrahl (24) des zweiten Lasers (21) eine Wellenlänge zwischen 532 nm und 266 nm auf- weist, wobei- die Wellenlänge des zweiten Laserstrahls (24) in jedem Fall gleich oder kleiner ist als die des ersten Laserstrahls (14) . 2. The method according to claim 1, characterized in that the laser beam (14) of the first laser (11) has a wavelength between 1064 nm and 355 nm and the laser beam (24) of the second laser (21) has a wavelength between 532 nm and 266 nm - Points, whereby - the wavelength of the second laser beam (24) is equal to or less than that of the first laser beam (14) in any case.
3. Verfahren nach Anspruch 2, d a d u r c h g e k e n n z e i c h n e t , daß der erste Laserstrahl eine Wellenlänge von 1064 nm und der zweite La¬ serstrahl eine Wellenlänge von 532 oder 355 nm aufweist.3. The method according to claim 2, characterized in that the first laser beam has a wavelength of 1064 nm and the second La ¬ serstrahl having a wavelength of 532 or 355 nm.
4. Verfahren nach einem der Ansprüche 1 bis 3, d a d u r c h g e k e n n z e i c h n e t , daß der erste Laser (11) eine optische Abbildungseinheit (13) aufweist, die eine größere Brennweite ) 15) erzeugt als die optische Abbil- dungseinheit (23) des zweiten Lasers (12) .4. The method according to any one of claims 1 to 3, characterized in that the first laser (11) has an optical imaging unit (13) which has a larger focal length (15) than the optical imaging unit (23) of the second laser (12th ).
5. Einrichtung zur Strukturierung von Leiterplatten (1) mit groben Leiterstrukturen (31) und mit mindestens einem Bereich5. Device for structuring printed circuit boards (1) with coarse conductor structures (31) and with at least one area
(4) mit feinen Leiterstrukturen (41) , welche folgende Merkma- le aufweist: a) eine Aufnahme (10) zur Positionierung einer Leiterplatte(4) with fine conductor structures (41), which has the following features: a) a receptacle (10) for positioning a circuit board
(1), b) einen ersten Laser (11) mit einer Ablenkoptik (12) und einer Abbildungseinheit (13) mit einer ersten Brennweite (15) , die über der Leiterplattenoberfläche derart positionierbar ist, daß sie eine erste Bearbeitungsfeldgröße (3) zu bestrahlen vermag, c) einen zweiten Laser (21) mit einer Ablenkoptik (22) und einer Abbildungseinheit (23) mit einer derartigen zweiten Brennweite (25) , daß der Laser eine zweite Bearbeitungs- feldgröße (4) zu bestrahlen vermag, wobei der zweite Laser (11) eine kleinere Wellenlänge als der erste Laser (12) aufweist und/oder wobei die zweite Brennweite (25) und die zweite Feldgröße (4) kleiner sind als die erste Brennweite (15) und die erste Feldgröße (3) , und d) eine Steuerungseinrichtung (9), um mit dem ersten Laser(1), b) a first laser (11) with a deflecting optics (12) and an imaging unit (13) with a first focal length (15) which can be positioned above the circuit board surface in such a way that it irradiates a first processing field size (3) is able, c) a second laser (21) with a deflection optics (22) and an imaging unit (23) with such a second focal length (25) that the laser can irradiate a second processing field size (4), the second laser (11) has a smaller wavelength than the first laser (12) and / or wherein the second focal length (25) and the second field size (4) are smaller than the first focal length (15) and the first field size (3), and d ) a control device (9) to use the first laser
(11) jeweils große Felder (3) der Leiterplatte (1) mit groben Leiterstrukturen (31) und mit dem zweiten Laser(11) large fields (3) of the circuit board (1) with coarse conductor structures (31) and with the second laser
(12) kleinere Felder (4) der Leiterplatte mit feineren Leiterstrukturen (41) zu bestrahlen. (12) to irradiate smaller fields (4) of the printed circuit board with finer conductor structures (41).
6. Einrichtung nach Anspruch 5, d a d u r c h g e k e n n z e i c h n e t , daß der erste Laser eine Wellenlänge zwischen 1064 nm und 355 nm und der zweite Laser (12) eine Wellenlänge zwischen 532 und 266 nm aufweist, daß die erste Feldgröße zwischen 150 x 150 mm2 und 50 x 80 mm2 beträgt und die zweite Feldgröße zwischen 100 x 100 mm2 und 25 x 25 mm2 beträgt. 6. Device according to claim 5, characterized in that the first laser has a wavelength between 1064 nm and 355 nm and the second laser (12) has a wavelength between 532 and 266 nm, that the first field size between 150 x 150 mm 2 and 50 x Is 80 mm 2 and the second field size is between 100 x 100 mm 2 and 25 x 25 mm 2 .
EP02740352A 2001-06-06 2002-05-15 Method and device for structuring printed circuit boards Withdrawn EP1393603A1 (en)

Applications Claiming Priority (3)

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DE10127357 2001-06-06
DE10127357A DE10127357C1 (en) 2001-06-06 2001-06-06 Manufacturing system for production of circuit structure on conductive plate uses two lasers with lenses illuminating two separate areas on plate
PCT/DE2002/001750 WO2002100137A1 (en) 2001-06-06 2002-05-15 Method and device for structuring printed circuit boards

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EP (1) EP1393603A1 (en)
JP (1) JP2004527923A (en)
KR (1) KR20040014547A (en)
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US6783688B2 (en) 2004-08-31
KR20040014547A (en) 2004-02-14
US20030000916A1 (en) 2003-01-02
JP2004527923A (en) 2004-09-09
TW520625B (en) 2003-02-11
WO2002100137A1 (en) 2002-12-12
CN1513285A (en) 2004-07-14

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