EP1373151A1 - Oxygen doping of silicon oxyfluoride glass - Google Patents

Oxygen doping of silicon oxyfluoride glass

Info

Publication number
EP1373151A1
EP1373151A1 EP02714956A EP02714956A EP1373151A1 EP 1373151 A1 EP1373151 A1 EP 1373151A1 EP 02714956 A EP02714956 A EP 02714956A EP 02714956 A EP02714956 A EP 02714956A EP 1373151 A1 EP1373151 A1 EP 1373151A1
Authority
EP
European Patent Office
Prior art keywords
silicon oxyfluoride
oxyfluoride glass
glass
absoφtion
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02714956A
Other languages
German (de)
French (fr)
Inventor
Lisa A. MOORE
Charlene M. SMITH
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Inc
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/997,782 external-priority patent/US6502426B2/en
Application filed by Corning Inc filed Critical Corning Inc
Publication of EP1373151A1 publication Critical patent/EP1373151A1/en
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1407—Deposition reactors therefor
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1415—Reactant delivery systems
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1415—Reactant delivery systems
    • C03B19/1423—Reactant deposition burners
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1453—Thermal after-treatment of the shaped article, e.g. dehydrating, consolidating, sintering
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/0085—Compositions for glass with special properties for UV-transmitting glass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/07—Impurity concentration specified
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/07—Impurity concentration specified
    • C03B2201/075—Hydroxyl ion (OH)
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/08—Doped silica-based glasses doped with boron or fluorine or other refractive index decreasing dopant
    • C03B2201/12—Doped silica-based glasses doped with boron or fluorine or other refractive index decreasing dopant doped with fluorine
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/20—Doped silica-based glasses doped with non-metals other than boron or fluorine
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/20—Doped silica-based glasses doped with non-metals other than boron or fluorine
    • C03B2201/21—Doped silica-based glasses doped with non-metals other than boron or fluorine doped with molecular hydrogen
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/30—For glass precursor of non-standard type, e.g. solid SiH3F
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/30—For glass precursor of non-standard type, e.g. solid SiH3F
    • C03B2207/32—Non-halide
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/36—Fuel or oxidant details, e.g. flow rate, flow rate ratio, fuel additives
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/36—Fuel or oxidant details, e.g. flow rate, flow rate ratio, fuel additives
    • C03B2207/38—Fuel combinations or non-standard fuels, e.g. H2+CH4, ethane
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/06—Doped silica-based glasses
    • C03C2201/08—Doped silica-based glasses containing boron or halide
    • C03C2201/12—Doped silica-based glasses containing boron or halide containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/06—Doped silica-based glasses
    • C03C2201/20—Doped silica-based glasses containing non-metals other than boron or halide
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/06—Doped silica-based glasses
    • C03C2201/20—Doped silica-based glasses containing non-metals other than boron or halide
    • C03C2201/21—Doped silica-based glasses containing non-metals other than boron or halide containing molecular hydrogen
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/06—Doped silica-based glasses
    • C03C2201/20—Doped silica-based glasses containing non-metals other than boron or halide
    • C03C2201/23—Doped silica-based glasses containing non-metals other than boron or halide containing hydroxyl groups
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/06—Doped silica-based glasses
    • C03C2201/30—Doped silica-based glasses containing metals
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/06—Doped silica-based glasses
    • C03C2201/30—Doped silica-based glasses containing metals
    • C03C2201/32—Doped silica-based glasses containing metals containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2203/00—Production processes
    • C03C2203/50—After-treatment
    • C03C2203/52—Heat-treatment
    • C03C2203/54—Heat-treatment in a dopant containing atmosphere

Definitions

  • the present invention relates generally to lithography, and particularly to optical photolithography glass for use in optical photolithography systems utilizing vacuum ultraviolet light (NUN) wavelengths below 193 nm, preferably below 175nm, preferably below 164 nm, such as VUV projection lithography systems utilizing wavelengths in the 157 nm region.
  • NUN vacuum ultraviolet light
  • the invention relates to VUV transmitting glass that is transmissive at wavelengths below 193 nm, in particular, a photomask silicon oxyfluoride glass suitable for use in the Vacuum Ultraviolet (VUV) 157 nm wavelength region.
  • VUV Vacuum Ultraviolet
  • Refractive optics requires materials having high transmittance.
  • high purity fused silica has been shown to exhibit the required transmittance of 99%/cm or better.
  • Projection optical photolithography systems that utilize the vacuum ultraviolet wavelengths of light below 193 nm provide benefits in terms of achieving smaller feature dimensions. Such systems that utilize vacuum ultraviolet wavelengths in the 157 nm wavelength region have the potential of improving integrated circuits with smaller feature sizes.
  • Current optical lithography systems used by the semiconductor industry in the manufacture of integrated circuits have progressed towards shorter wavelengths of light, such as the popular 248 nm and 193 nm wavelengths, but the commercial use and adoption of vacuum ultraviolet wavelengths below 193nm, such as 157 nm has been hindered by the transmission nature of such vacuum ultraviolet wavelengths in the 157 nm region through optical materials.
  • the glass preferably has ⁇ 1% transmission loss at 157.6nm after exposure to the F 2 excimer laser for 60 million at 0.1mJ/cm 2 -pulse.
  • Our invention describes silicon oxyfluoride glasses containing high levels of molecular oxygen that exhibit lower F 2 laser-induced absorption compared to non-oxygen loaded glasses and methods for making them.
  • the invention includes a method of making a VUV transmitting glass for transmitting below 200 nm VUV wavelengths such as 157 nm wavelengths produced by F 2 excimer lasers.
  • the method includes providing a silicon oxyfluoride glass, providing a plurality of O 2 molecules, and doping the O 2 molecules into the silicon oxyfluoride glass to provide a VUV transmitting silicon oxyfluoride glass containing intersticial O 2 molecules.
  • the invention includes a method of making a laser durable VUV transmitting silicon oxyfluoride glass, which is preferably durable to F 2 excimer laser exposure with a resistance to F 2 laser induced absorption.
  • the method includes providing a consolidated silicon oxyfluoride glass and providing an O 2 doping treatment atmosphere.
  • the method includes enveloping the silicon oxyfluoride glass with the O 2 doping treatment atmosphere and dissolving a plurality of the O 2 molecules from the atmosphere into the silicon oxyfluoride glass to provide a silicon oxyfluoride glass with insolution O 2 molecules.
  • the invention includes a method of making a laser durable VUV transmitting silicon oxyfluoride glass.
  • the method includes providing a non-consolidated silicon oxyfluoride glass precursor and providing a glass consolidation furnace with a heated consolidation zone for consolidating the non-consolidated glass precursor.
  • the method includes supplying an oxygen doping atmosphere to the consolidation furnace and consolidating the glass precursor into a consolidated silicon oxyfluoride glass wherein O 2 molecules are dissolved in the consolidated silicon oxyfluoride glass.
  • the invention includes a VUV transmitting glass photomask substrate.
  • the photomask substrate is comprised of a silicon oxyfluoride glass doped with a plurality of O 2 molecules.
  • the invention includes a VUV transmitting silicon oxyfluoride glass.
  • the VUV transmitting silicon oxyfluoride glass contains a plurality of doped O 2 molecules and has a resistance to VUV laser induced absorption bands.
  • FIG. 1 shows a method and glass in accordance with the invention.
  • FIG. 2 shows a method and glass in accordance with the invention.
  • FIG. 3 shows a method, a VUV lithography system, and glass in accordance with the invention.
  • FIG. 4 shows a method, a VUV lithography system, and glass in accordance with the invention.
  • FIG. 5 shows a VUV transmitting silicon oxyfluoride glass photomask substrate in accordance with the invention (FIG. 5A top view, FIG. 5B side view).
  • FIG. 6 shows a VUV absorption spectra of a silicon oxyfluoride glass before exposure to a F 2 excimer laser (open circles), after exposing to the F 2 excimer laser for 10.6E6 pulses at 2 mj/cm 2 -pulse (open squares), and after F 2 excimer laser exposure and oxygen treatment (1 atmosphere O 2 for 7 days at 1000 degrees C)(closed diamonds).
  • FIG. 7 shows a VUV absorption spectra of silicon oxyfluoride glass that was heat treated in oxygen (open circles), then exposed to the F2 excimer laser for 9.92E6 pulses at 2 mJ/cm 2 -pulse (closed diamonds).
  • a VUV absorption spectra curve for the same glass without an oxygen pretreatment exposed to the same laser conditions (10.6E6 pulses at 2 mJ/cm 2 -pulse, open squares) is included for comparison.
  • the invention includes a method of making a VUV transmitting glass.
  • the VUV transmitting glass provides for transmission of below 200 nm VUV wavelengths, such as the 157 nm wavelength emissions of a F 2 excimer laser.
  • the VUV transmitting glass is durable to F 2 excimer laser exposures and has a resistance to F 2 laser induced absorption.
  • the method includes the steps of providing a silicon oxyfluoride glass and providing a plurality of O 2 molecules.
  • the method includes doping the O 2 molecules into the silicon oxyfluoride glass to provide a VUV transmitting silicon oxyfluoride glass containing intersticial O 2 molecules.
  • Providing a silicon oxyfluoride glass preferably includes providing a silicon oxyfluoride glass which contains > 0.1 wt.
  • Providing a silicon oxyfluoride glass preferably includes providing a dry silicon oxyfluoride glass which has an OH content below 50 ppm by weight.
  • the dry silicon oxyfluoride glass has ⁇ 10 ppm OH by weight, more preferably ⁇ 5 ppm OH by weight, and most preferably ⁇ 1 ppm OH by weight.
  • Providing a silicon oxyfluoride glass preferably includes providing a silicon oxyfluoride glass which has a CI content below 5 ppm by weight, more preferably ⁇ 1 ppm CI by weight.
  • Doping the O 2 molecules preferably includes dissolving the O 2 molecules into the silicon oxyfluoride glass, preferably with the method including causing the O 2 molecules to pass into solution in the glass and remain as O 2 molecules in the glass when the method of making is completed and the glass is put into use for transmitting light wavelengths.
  • the O 2 molecules remain as O 2 molecules in the glass at the end of the making process, with the glass containing such intersticial O 2 molecules as insolution O 2 molecules.
  • FIG. 1 shows an embodiment of the method of making the VUV transmitting glass 20.
  • the method includes providing an O 2 doping treatment atmosphere 26 which has an O 2 concentration of at least 10 15 O 2 mole/cc.
  • the O 2 doping treatment atmosphere has a concentration of > 10 16 O 2 moles/cc.
  • the O 2 doping treatment atmosphere has a concentration of ⁇ 10 20 O 2 moles/cc.
  • a particularly preferred range of O 2 concentration is in the range of about 10 16 to 10 20 O 2 moles/cc.
  • the method preferably includes providing an O 2 doping vessel 28 for containing the O 2 doping treatment atmosphere and silicon oxyfluoride glass 22.
  • the method preferably includes heating treatment atmosphere 26 and glass 22 to a predetermined O 2 doping temperature which is effective for doping the molecules of O 2 into the glass.
  • the O2 doping temperature is at least 600° C.
  • the O 2 doping treatment atmosphere is at least one atmosphere of O 2 .
  • the invention includes hipping the glass 22 so that the glass is hot isostatically pressed in the presence of that O 2 molecules.
  • the invention includes pressurizing the interior of the O 2 doping vessel so that the glass 22 is doped with O 2 from a pressurized O 2 treatment atmosphere.
  • the 0 2 doping treatment vessel 28 is comprised of a non-contaminant refractory material. More preferably the non-contaminating refractory material treatment vessel is non-metallic such as a silica quartz muffle furnace or a non-metallic bell jar. As shown in FIG.
  • the method includes consolidating the silicon oxyfluoride glass in the presence of, and with, the O 2 molecules.
  • the non-consolidated glass 24 is consolidated into consolidated glass 22 in the presence of the O 2 molecules so that the resulting consolidated silicon oxyfluoride glass 20 contains doped O 2 molecules.
  • the invention includes a method of making a laser durable VUV transmitting silicon oxyfluoride glass.
  • the method includes providing a consolidated silicon oxyfluoride glass 22.
  • the method includes providing a O 2 doping treatment atmosphere.
  • the method includes enveloping the silicon oxyfluoride glass with the O2 doping treatment atmosphere and dissolving a plurality of the O 2 molecules from the atmosphere into the silicon oxyfluoride glass to provide a silicon oxyfluoride glass with insolution O 2 molecules.
  • vessel 28 contains consolidated glass 22 and O 2 molecule atmosphere 26 provided by the O 2 supply source so that the glass is enveloped in the O 2 doping treatment atmosphere.
  • the method includes heating the O 2 doping treatment atmosphere and the silicon oxyfluoride glass to a predetermined O 2 doping temperature, preferably at > 600° C.
  • a preferred O 2 doping temperature is about 1000 ( ⁇ 100) degrees C, most preferably with about one atmosphere of oxygen.
  • Providing an O2 doping treatment atmosphere 26 preferably includes providing an atmosphere with an O concentration of at least 10 15 O 2 moles/cc, more preferably at least 10 16 O 2 moles/cc.
  • the atmosphere O 2 concentration is no greater than 10 O 2 moles/cc.
  • a preferred O 2 concentration doping treatment atmosphere range is about 10 16 - 10 18 O 2 moles/cc.
  • the invention includes a method of making a laser durable VUV transmitting silicon oxyfluoride glass.
  • An embodiment of the invention is shown in FIG. 2.
  • the method includes providing a non-consolidated silicon oxyfluoride glass precursor 24.
  • the method includes providing a glass consolidation furnace 30 with a heated consolidation zone 32 for consolidating the non-consolidated glass precursor.
  • the method includes supplying an oxygen doping atmosphere 26 to the consolidating furnace 30 and consolidating the glass precursor into a consolidated silicon oxyfluoride glass wherein O 2 molecules are dissolved in the consolidated silicon oxyfluoride glass.
  • the ' method includes heating the oxygen doping atmosphere and the consolidating glass 24 to a predetermined O 2 doping consolidation temperature.
  • providing a glass consolidation furnace 30 includes providing a non- contaminant refractory material non-metallic silica muffle furnace.
  • providing a glass consolidation furnace 30 includes providing a plasma discharge glass consolidation furnace.
  • the plasma discharge of the plasma discharge glass consolidating furnace is utilized to heat and consolidate the non-consolidate precursor into the consolidated glass in the presence of the O 2 .
  • non- consolidated glass particles or other Si containing feedstocks are fed into a plasma discharge along with oxygen in a direct laydown plasma process.
  • Supplying an oxygen doping atmosphere preferably includes supplying an atmosphere with an O 2 concentration of at least 10 15 O 2 moles/cc, more preferably > 10 16 O2 moles/cc.
  • the oxygen doping atmosphere has an O 2 concentration no greater than 10 O 2 moles/cc.
  • the doping atmosphere has an O 2 concentration in the range of 10 16 to 10 18 moles/cc.
  • the non-consolidated glass is a soot body preform, the glass is consolidated under a highly oxidizing atmosphere which is at least 50% by volume O 2 .
  • the O 2 doped glass is thus consolidated and synthesized so as to contain O 2 molecules.
  • the invention includes a VUV transmitting glass photomask substrate.
  • FIGs. 3- 5 show a VUV transmitting glass photomask substrate 34.
  • the VUV transmitting glass photomask substrate 34 is comprised of a silicon oxyfluoride glass doped with a plurality of O 2 molecules.
  • the silicon oxyfluoride glass contains at least 0.1 weight percent fluorine, more preferably a fluorine content in the range of 0.1 to 2 wt. % F.
  • a preferred fluorine content range is from 0.2 to 1.2 wt. % F.
  • a preferred fluorine content range is from 0.1 to 0.4 wt. % F.
  • a preferred fluorine content is about 1.2 ( ⁇ 0.3) wt. % F.
  • the silicon oxyfluoride glass doped with O 2 is a dry glass, preferably with an OH content below 50 ppm by weight.
  • the O 2 doped low OH silicon oxyfluoride glass photomask substrate blank 34 has an OH content ⁇ 10 ppm by wt., more preferred ⁇ 5 ppm by wt., and most preferred ⁇ 1 ppm by wt.
  • the dry silicon oxyfluoride glass doped with O 2 has a CI content below 5 ppm by weight, and more preferred ⁇ 1 ppm CI by weight.
  • the photomask substrate glass has a 165 nm absorption less than 0.2 absorption units/5.1 mm.
  • the photomask substrate glass has a 215 nm absorption less than 0.2 absorption units/5.1 mm.
  • the silicon oxyfluoride glass has a resistance to F2 excimer 157 nm laser induced 165 nm absorption bands.
  • the silicon oxyfluoride glass has a 165 nm absorption less than 0.3 absorption units/5.1 mm after an F 2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm -pulse.
  • the silicon oxyfluoride glass has a 215 nm absorption less than 0.2 absorption units/5.1 mm after an F 2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm -pulse.
  • the silicon oxyfluoride glass has a laser induced absorption at 157 nm less than 0.4 absorption units/5 mm after an F 2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm 2 -pulse.
  • the silicon oxyfluoride glass substrate has a 157 nm laser induced delta absorption ⁇ 0.20 absorption units/5 mm after an F 2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm -pulse.
  • the invention includes a VUV transmitting silicon oxyfluoride lithography glass for transmitting wavelengths below 200 nm.
  • the VUV transmitting silicon oxyfluoride glass of the invention is shown by the cross hatching in FIGs. 3-4.
  • the inventive VUV transmitting silicon oxyfluoride glass contains a plurality of doped O 2 molecules and has a resistance to VUV laser induced absorption bands.
  • the VUV transmitting glass is comprised of a silicon oxyfluoride glass doped with a plurality of intersticial O 2 molecules.
  • the silicon oxyfluoride glass contains at least 0.1 weight percent fluorine, more preferably a fluorine content in the range of 0.1 to 2 wt. % F.
  • a preferred fluorine content range is from 0.2 to 1.2 wt. % F.
  • a preferred fluorine content range is from 0.1 to 0.4 wt. % F.
  • a preferred fluorine content is about 1.2 ( ⁇ 0.3) wt. % F.
  • the silicon oxyfluoride glass doped with O 2 is a dry glass, preferably with an OH content below 50 ppm by weight.
  • the O 2 doped low OH silicon oxyfluoride glass has an OH content ⁇ 10 ppm by wt., more preferred ⁇ 5 ppm by wt., and most preferred ⁇ 1 ppm by wt.
  • the dry silicon oxyfluoride glass doped with O 2 has a CI content below 5 ppm by weight, and more preferred ⁇ 1 ppm CI by weight.
  • the glass has a 165 nm absorption less than 0.2 absorption units/5.1 mm.
  • the glass has a 215 nm absorption less than 0.2 absorption units/5.1 mm.
  • the silicon oxyfluoride glass has a resistance to F 2 excimer 157 nm laser induced 165 nm absorption bands.
  • the silicon oxyfluoride glass has a 165 nm absorption less than 0.3 absorption units/5.1 mm after an F 2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm -pulse.
  • the silicon oxyfluoride glass has a 215 nm absorption less than 0.2 absorption units/5.1 mm after an F 2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm -pulse.
  • the silicon oxyfluoride glass has a laser induced absorption at 157 nm less than 0.4 absorption units/5 mm after an F 2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm 2 -pulse.
  • the silicon oxyfluoride glass has a 157 nm laser induced delta absorption ⁇ 0.20 absorption units/5 mm after an F 2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm -pulse.
  • FIG. 6 shows the VUV spectra of a dry ( ⁇ 1 ppm OH), silicon oxyfluoride-doped (1.2 wt.%F) glass as made (open circles, lowest curve) and then after being exposed to 10.6E6 pulses at 2 mJ/cm 2 -pulse at 157nm (open squares, highest curve). The appearance of the E' center at 215nm as well as the more important 165nm band (ODC) is clear. This glass was then held under oxygen (1 atm) at 1000°C for 7 days.
  • FIG. 7 shows the VUV spectra of the same silicon oxyfluoride glass as in FIG. 6 that was pre-treated in oxygen (open circles, lowest curve), then exposed to the F 2 excimer laser for 9.92E6 pulses at 2 mJ/cm 2 -pulse (closed diamonds, middle curve).
  • the open circles lowest curve spectrum is the glass after O 2 -loading, before exposure.
  • the closed diamonds middle curve spectrum is the O 2 -loaded glass exposed at 157nm for about 10E6 pulses, and the open squares highest curve spectrum is the same as in FIG. 6, of the glass as made, exposed to 10.6E6 pulses (for comparison).
  • the feature to notice in the comparison is the lack of a 165nm band (ODC) in the O 2 -containing glass.
  • ODC 165nm band
  • the presence of oxygen inhibits the formation of the 165nm band. Since the 165nm band is close to 157nm, reducing this absorption band significantly reduces the induced absorption at 157nm.
  • Silicon oxyfluoride glasses containing excess oxygen can be made by several methods. First, as described above, the as-made silicon oxyfluoride glasses glass can be exposed to an oxygen atmosphere at elevated temperatures to diffuse O 2 into the structure. Second, the glass can be synthesized so as to contain excess oxygen. Silica glasses made by direct laydown processes(e.g., plasma) have been made with high excess oxygen levels compared to glasses made by soot preform body-to-consolidated glass body processes. Finally, the oxygen content of silicon oxyfluoride glasses made by soot preform body -to- consolidated glass body processing can be increased by consolidating under a highly oxidizing atmosphere (e.g. 50-100% O 2 ). The invention provides silicon oxyfluoride glasses with improved resistance to
  • inventive silicon oxyfluoride glasses materials are useful for 157nm lithography applications such as photomasks, lenses, pellicles, and windows, for example.

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Abstract

High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The doped glass (20) is made by providing an O2 doping atmosphere (26) to a silicon oxyfluoride glass (22) in a doping vessel (28). The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a "dry," silicon oxyfluoride glass which contains doped O2 molecules and which exhibits very high transmittance and laser transmission durability in the vacuum ultraviolet (VUV) wavelength region. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass contains intersticial O2 molecules which provide improved endurance to laser exposure. Preferably the O2 doped silicon oxyfluoride glass is characterized by having less than 1x1017 molecules/cm3 of molecular hydrogen and low chlorine levels.

Description

OXYGEN DOPING OF SILICON OXYFLUORIDE GLASS
CROSS-REFERENCE TO RELATED APPLICATIONS
This application claims priority to U.S. Provisional application Serial No.
60/271,135, filed February 24, 2001 and U.S. Serial No. 09/997,782, filed November 28, 2001.
This application incorporates, by reference, U.S. Serial No. 09/397,573, filed September 16, 1999, entitled Vacuum Ultraviolet Transmitting Silicon Oxyfluoride Lithography Glass, of Lisa A. Moore and Charlene Smith, now U.S. Patent No.
6,242,136. The application is related to U.S. Application Serial No. 09/397,572, filed September 16, 1999, entitled Projection Lithography Photomasks And Method Of Making, of George Berkey, Lisa A. Moore and Michelle D. Pierson, and U.S. Application Serial No. 09/397,577, filed September 16, 1999, entitled Projection Lithography Photomask Blanks, Preforms and Method of Making, of George Berkey, Lisa A. Moore and Charles C. Yu, now U.S. Patent No. 6,265,1 15, and U.S. Provisional Serial No. 60/271,136 (Attorney Docket SP01-027P) filed February 24, 2001, entitled VACUUM ULTRAVIOLET TRANSMITTING SILICON OXYFLUORIDE LITHOGRAPHY GLASS, of Charlene Smith and Lisa Moore, which are hereby incorporated by reference.
FIELD OF THE INVENTION
The present invention relates generally to lithography, and particularly to optical photolithography glass for use in optical photolithography systems utilizing vacuum ultraviolet light (NUN) wavelengths below 193 nm, preferably below 175nm, preferably below 164 nm, such as VUV projection lithography systems utilizing wavelengths in the 157 nm region.
The invention relates to VUV transmitting glass that is transmissive at wavelengths below 193 nm, in particular, a photomask silicon oxyfluoride glass suitable for use in the Vacuum Ultraviolet (VUV) 157 nm wavelength region. BACKGROUND OF THE INVENTION
Refractive optics requires materials having high transmittance. For semiconductor applications where smaller and smaller features are desired at the 248 and 193 nm wavelengths, high purity fused silica has been shown to exhibit the required transmittance of 99%/cm or better.
Projection optical photolithography systems that utilize the vacuum ultraviolet wavelengths of light below 193 nm provide benefits in terms of achieving smaller feature dimensions. Such systems that utilize vacuum ultraviolet wavelengths in the 157 nm wavelength region have the potential of improving integrated circuits with smaller feature sizes. Current optical lithography systems used by the semiconductor industry in the manufacture of integrated circuits have progressed towards shorter wavelengths of light, such as the popular 248 nm and 193 nm wavelengths, but the commercial use and adoption of vacuum ultraviolet wavelengths below 193nm, such as 157 nm has been hindered by the transmission nature of such vacuum ultraviolet wavelengths in the 157 nm region through optical materials. Such slow progression by the semiconductor industry of the use of VUV light below 175 nm such as 157 nm light has been also due to the lack of economically manufacturable photomask blanks from optically transmissive materials. For the benefit of vacuum ultraviolet photolithography in the 157 nm region such as the emission spectrum VUV window of a F2 excimer laser to be utilized in the manufacturing of integrated circuits there is a need for glass that has beneficial optical properties including good transmission below 164 nm and at 157 nm and good durability and that can be manufactured economically. The present invention overcomes problems in the prior art and provides a economical high quality improved photomask blanks and VUV transmitting lithography glass that can be used to improve the manufacturing of integrated circuits with vacuum ultraviolet wavelengths.
SUMMARY OF THE INVENTION
We have shown that dry, high purity fused silica (< 1 ppm OH) exhibits superior transmission in the deep ultraviolet compared to "wet" high purity fused silica (e.g., Corning Code 7980). With the addition of fluorine, the transmission of dry silica in the VUV can be even further improved. We have measured transmissions such as 79.8%/6.35mm (90%/cm internal T) at 157nm in these glasses. Such materials are of interest for use as components for 157nm lithography, particularly photomask substrates, pellicles, thin lenses and windows. For these applications, it is not only important that the glass exhibits a high initial transmission, but the transmission must not decrease under exposure to the F2 excimer laser. For 157nm photomask material the glass preferably has <1% transmission loss at 157.6nm after exposure to the F2 excimer laser for 60 million at 0.1mJ/cm2-pulse. Our invention describes silicon oxyfluoride glasses containing high levels of molecular oxygen that exhibit lower F2 laser-induced absorption compared to non-oxygen loaded glasses and methods for making them.
The invention includes a method of making a VUV transmitting glass for transmitting below 200 nm VUV wavelengths such as 157 nm wavelengths produced by F2 excimer lasers. The method includes providing a silicon oxyfluoride glass, providing a plurality of O2 molecules, and doping the O2 molecules into the silicon oxyfluoride glass to provide a VUV transmitting silicon oxyfluoride glass containing intersticial O2 molecules.
The invention includes a method of making a laser durable VUV transmitting silicon oxyfluoride glass, which is preferably durable to F2 excimer laser exposure with a resistance to F2 laser induced absorption. The method includes providing a consolidated silicon oxyfluoride glass and providing an O2 doping treatment atmosphere. The method includes enveloping the silicon oxyfluoride glass with the O2 doping treatment atmosphere and dissolving a plurality of the O2 molecules from the atmosphere into the silicon oxyfluoride glass to provide a silicon oxyfluoride glass with insolution O2 molecules.
The invention includes a method of making a laser durable VUV transmitting silicon oxyfluoride glass. The method includes providing a non-consolidated silicon oxyfluoride glass precursor and providing a glass consolidation furnace with a heated consolidation zone for consolidating the non-consolidated glass precursor. The method includes supplying an oxygen doping atmosphere to the consolidation furnace and consolidating the glass precursor into a consolidated silicon oxyfluoride glass wherein O2 molecules are dissolved in the consolidated silicon oxyfluoride glass. The invention includes a VUV transmitting glass photomask substrate. The photomask substrate is comprised of a silicon oxyfluoride glass doped with a plurality of O2 molecules.
The invention includes a VUV transmitting silicon oxyfluoride glass. The VUV transmitting silicon oxyfluoride glass contains a plurality of doped O2 molecules and has a resistance to VUV laser induced absorption bands.
It is to be understood that both the foregoing general description and the following detailed description are merely exemplary of the invention, and are intended to provide an overview or framework for understanding the nature and character of the invention as it is claimed. The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate various embodiments of the invention, and together with the description serve to explain the principals and operation of the invention.
BRIEF DESCRIPTION OF DRAWINGS
FIG. 1 shows a method and glass in accordance with the invention.
FIG. 2 shows a method and glass in accordance with the invention. FIG. 3 shows a method, a VUV lithography system, and glass in accordance with the invention.
FIG. 4 shows a method, a VUV lithography system, and glass in accordance with the invention.
FIG. 5 shows a VUV transmitting silicon oxyfluoride glass photomask substrate in accordance with the invention (FIG. 5A top view, FIG. 5B side view).
FIG. 6 shows a VUV absorption spectra of a silicon oxyfluoride glass before exposure to a F2 excimer laser (open circles), after exposing to the F2 excimer laser for 10.6E6 pulses at 2 mj/cm2 -pulse (open squares), and after F2 excimer laser exposure and oxygen treatment (1 atmosphere O2 for 7 days at 1000 degrees C)(closed diamonds).
FIG. 7 shows a VUV absorption spectra of silicon oxyfluoride glass that was heat treated in oxygen (open circles), then exposed to the F2 excimer laser for 9.92E6 pulses at 2 mJ/cm2-pulse (closed diamonds). A VUV absorption spectra curve for the same glass without an oxygen pretreatment exposed to the same laser conditions (10.6E6 pulses at 2 mJ/cm2-pulse, open squares) is included for comparison.
DESCRIPTION OF INVENTION
The invention includes a method of making a VUV transmitting glass. The VUV transmitting glass provides for transmission of below 200 nm VUV wavelengths, such as the 157 nm wavelength emissions of a F2 excimer laser. The VUV transmitting glass is durable to F2 excimer laser exposures and has a resistance to F2 laser induced absorption. The method includes the steps of providing a silicon oxyfluoride glass and providing a plurality of O2 molecules. The method includes doping the O2 molecules into the silicon oxyfluoride glass to provide a VUV transmitting silicon oxyfluoride glass containing intersticial O2 molecules. Providing a silicon oxyfluoride glass preferably includes providing a silicon oxyfluoride glass which contains > 0.1 wt. % F, more preferably a fluorine content in the range of 0.1 to 2 wt. % F. A preferred fluoride content range is from 0.2 to 1.2 wt. % F. A preferred fluorine content range is from 0.1 to 0.4 wt. % F. A preferred fluorine content is about 1.2 (± 0.3) wt. % F. Providing a silicon oxyfluoride glass preferably includes providing a dry silicon oxyfluoride glass which has an OH content below 50 ppm by weight. Preferably the dry silicon oxyfluoride glass has < 10 ppm OH by weight, more preferably < 5 ppm OH by weight, and most preferably < 1 ppm OH by weight. Providing a silicon oxyfluoride glass preferably includes providing a silicon oxyfluoride glass which has a CI content below 5 ppm by weight, more preferably < 1 ppm CI by weight. Doping the O2 molecules preferably includes dissolving the O2 molecules into the silicon oxyfluoride glass, preferably with the method including causing the O2 molecules to pass into solution in the glass and remain as O2 molecules in the glass when the method of making is completed and the glass is put into use for transmitting light wavelengths. The O2 molecules remain as O2 molecules in the glass at the end of the making process, with the glass containing such intersticial O2 molecules as insolution O2 molecules. FIG. 1 shows an embodiment of the method of making the VUV transmitting glass 20. The method includes providing an O2 doping treatment atmosphere 26 which has an O2 concentration of at least 1015 O2 mole/cc. Preferably the O2 doping treatment atmosphere has a concentration of > 1016 O2 moles/cc. Preferably the O2 doping treatment atmosphere has a concentration of <1020 O2 moles/cc. A particularly preferred range of O2 concentration is in the range of about 1016 to 1020 O2 moles/cc. The method preferably includes providing an O2 doping vessel 28 for containing the O2 doping treatment atmosphere and silicon oxyfluoride glass 22. The method preferably includes heating treatment atmosphere 26 and glass 22 to a predetermined O2 doping temperature which is effective for doping the molecules of O2 into the glass. Preferably, the O2 doping temperature is at least 600° C. Preferably the O2 doping treatment atmosphere is at least one atmosphere of O2. In an embodiment the invention includes hipping the glass 22 so that the glass is hot isostatically pressed in the presence of that O2 molecules. In an embodiment the invention includes pressurizing the interior of the O2 doping vessel so that the glass 22 is doped with O2 from a pressurized O2 treatment atmosphere. Preferably the 02 doping treatment vessel 28 is comprised of a non-contaminant refractory material. More preferably the non-contaminating refractory material treatment vessel is non-metallic such as a silica quartz muffle furnace or a non-metallic bell jar. As shown in FIG. 2, in an embodiment the method includes consolidating the silicon oxyfluoride glass in the presence of, and with, the O2 molecules. In FIG. 2, the non-consolidated glass 24 is consolidated into consolidated glass 22 in the presence of the O2 molecules so that the resulting consolidated silicon oxyfluoride glass 20 contains doped O2 molecules.
The invention includes a method of making a laser durable VUV transmitting silicon oxyfluoride glass. The method includes providing a consolidated silicon oxyfluoride glass 22. The method includes providing a O2 doping treatment atmosphere. The method includes enveloping the silicon oxyfluoride glass with the O2 doping treatment atmosphere and dissolving a plurality of the O2 molecules from the atmosphere into the silicon oxyfluoride glass to provide a silicon oxyfluoride glass with insolution O2 molecules. As shown in FIG. 1, vessel 28 contains consolidated glass 22 and O2 molecule atmosphere 26 provided by the O2 supply source so that the glass is enveloped in the O2 doping treatment atmosphere. Preferably the method includes heating the O2 doping treatment atmosphere and the silicon oxyfluoride glass to a predetermined O2 doping temperature, preferably at > 600° C. A preferred O2 doping temperature is about 1000 (± 100) degrees C, most preferably with about one atmosphere of oxygen. Providing an O2 doping treatment atmosphere 26 preferably includes providing an atmosphere with an O concentration of at least 1015 O2 moles/cc, more preferably at least 1016 O2 moles/cc. Preferably the atmosphere O2 concentration is no greater than 10 O2 moles/cc. A preferred O2 concentration doping treatment atmosphere range is about 1016 - 1018 O2 moles/cc.
The invention includes a method of making a laser durable VUV transmitting silicon oxyfluoride glass. An embodiment of the invention is shown in FIG. 2. The method includes providing a non-consolidated silicon oxyfluoride glass precursor 24. The method includes providing a glass consolidation furnace 30 with a heated consolidation zone 32 for consolidating the non-consolidated glass precursor. The method includes supplying an oxygen doping atmosphere 26 to the consolidating furnace 30 and consolidating the glass precursor into a consolidated silicon oxyfluoride glass wherein O2 molecules are dissolved in the consolidated silicon oxyfluoride glass. Preferably the' method includes heating the oxygen doping atmosphere and the consolidating glass 24 to a predetermined O2 doping consolidation temperature. In an embodiment, providing a glass consolidation furnace 30 includes providing a non- contaminant refractory material non-metallic silica muffle furnace. In an embodiment providing a glass consolidation furnace 30 includes providing a plasma discharge glass consolidation furnace. In an embodiment the plasma discharge of the plasma discharge glass consolidating furnace is utilized to heat and consolidate the non-consolidate precursor into the consolidated glass in the presence of the O2. For example, non- consolidated glass particles or other Si containing feedstocks are fed into a plasma discharge along with oxygen in a direct laydown plasma process. Supplying an oxygen doping atmosphere preferably includes supplying an atmosphere with an O2 concentration of at least 1015 O2 moles/cc, more preferably > 1016 O2 moles/cc.
70
Preferably the oxygen doping atmosphere has an O2 concentration no greater than 10 O2 moles/cc. Preferably the doping atmosphere has an O2 concentration in the range of 1016 to 1018 moles/cc. Preferably when the non-consolidated glass is a soot body preform, the glass is consolidated under a highly oxidizing atmosphere which is at least 50% by volume O2. The O2 doped glass is thus consolidated and synthesized so as to contain O2 molecules. The invention includes a VUV transmitting glass photomask substrate. FIGs. 3- 5 show a VUV transmitting glass photomask substrate 34. The VUV transmitting glass photomask substrate 34 is comprised of a silicon oxyfluoride glass doped with a plurality of O2 molecules. Preferably the silicon oxyfluoride glass contains at least 0.1 weight percent fluorine, more preferably a fluorine content in the range of 0.1 to 2 wt. % F. A preferred fluorine content range is from 0.2 to 1.2 wt. % F. A preferred fluorine content range is from 0.1 to 0.4 wt. % F. A preferred fluorine content is about 1.2 (± 0.3) wt. % F. Preferably the silicon oxyfluoride glass doped with O2 is a dry glass, preferably with an OH content below 50 ppm by weight. Preferably the O2 doped low OH silicon oxyfluoride glass photomask substrate blank 34 has an OH content < 10 ppm by wt., more preferred < 5 ppm by wt., and most preferred < 1 ppm by wt. Preferably the dry silicon oxyfluoride glass doped with O2 has a CI content below 5 ppm by weight, and more preferred < 1 ppm CI by weight. Preferably the photomask substrate glass has a 165 nm absorption less than 0.2 absorption units/5.1 mm. Preferably the photomask substrate glass has a 215 nm absorption less than 0.2 absorption units/5.1 mm. Preferably the silicon oxyfluoride glass has a resistance to F2 excimer 157 nm laser induced 165 nm absorption bands. Preferably the silicon oxyfluoride glass has a 165 nm absorption less than 0.3 absorption units/5.1 mm after an F2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm -pulse. Preferably the silicon oxyfluoride glass has a 215 nm absorption less than 0.2 absorption units/5.1 mm after an F2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm -pulse. Preferably the silicon oxyfluoride glass has a laser induced absorption at 157 nm less than 0.4 absorption units/5 mm after an F2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm2-pulse. Preferably, the silicon oxyfluoride glass substrate has a 157 nm laser induced delta absorption < 0.20 absorption units/5 mm after an F2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm -pulse.
The invention includes a VUV transmitting silicon oxyfluoride lithography glass for transmitting wavelengths below 200 nm. The VUV transmitting silicon oxyfluoride glass of the invention is shown by the cross hatching in FIGs. 3-4. The inventive VUV transmitting silicon oxyfluoride glass contains a plurality of doped O2 molecules and has a resistance to VUV laser induced absorption bands. The VUV transmitting glass is comprised of a silicon oxyfluoride glass doped with a plurality of intersticial O2 molecules. Preferably the silicon oxyfluoride glass contains at least 0.1 weight percent fluorine, more preferably a fluorine content in the range of 0.1 to 2 wt. % F. A preferred fluorine content range is from 0.2 to 1.2 wt. % F. A preferred fluorine content range is from 0.1 to 0.4 wt. % F. A preferred fluorine content is about 1.2 (± 0.3) wt. % F. Preferably the silicon oxyfluoride glass doped with O2 is a dry glass, preferably with an OH content below 50 ppm by weight. Preferably the O2 doped low OH silicon oxyfluoride glass has an OH content < 10 ppm by wt., more preferred < 5 ppm by wt., and most preferred < 1 ppm by wt. Preferably the dry silicon oxyfluoride glass doped with O2 has a CI content below 5 ppm by weight, and more preferred < 1 ppm CI by weight. Preferably the glass has a 165 nm absorption less than 0.2 absorption units/5.1 mm. Preferably the glass has a 215 nm absorption less than 0.2 absorption units/5.1 mm. Preferably the silicon oxyfluoride glass has a resistance to F2 excimer 157 nm laser induced 165 nm absorption bands. Preferably the silicon oxyfluoride glass has a 165 nm absorption less than 0.3 absorption units/5.1 mm after an F2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm -pulse. Preferably the silicon oxyfluoride glass has a 215 nm absorption less than 0.2 absorption units/5.1 mm after an F2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm -pulse. Preferably the silicon oxyfluoride glass has a laser induced absorption at 157 nm less than 0.4 absorption units/5 mm after an F2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm2 -pulse. Preferably, the silicon oxyfluoride glass has a 157 nm laser induced delta absorption < 0.20 absorption units/5 mm after an F2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm -pulse.
We have discovered that the induced absorption in a dry, silicon oxyfluoride glasses that has been exposed to the F2 excimer laser can be largely removed by heat treating the glass in an oxygen atmosphere. FIG. 6 shows the VUV spectra of a dry (<1 ppm OH), silicon oxyfluoride-doped (1.2 wt.%F) glass as made (open circles, lowest curve) and then after being exposed to 10.6E6 pulses at 2 mJ/cm2 -pulse at 157nm (open squares, highest curve). The appearance of the E' center at 215nm as well as the more important 165nm band (ODC) is clear. This glass was then held under oxygen (1 atm) at 1000°C for 7 days. The 165nm band as well as the 215nm band disappear under these conditions (closed diamonds, middle curve). We have discovered that dry, silicon oxyfluoride silica glasses containing high levels of molecular oxygen show significantly lower induced absorption when exposed to the F2 excimer laser than silicon oxyfluoride silica glasses that do not contain excess oxygen. FIG. 7 shows the VUV spectra of the same silicon oxyfluoride glass as in FIG. 6 that was pre-treated in oxygen (open circles, lowest curve), then exposed to the F2 excimer laser for 9.92E6 pulses at 2 mJ/cm2-pulse (closed diamonds, middle curve). The open circles lowest curve spectrum is the glass after O2-loading, before exposure. The closed diamonds middle curve spectrum is the O2-loaded glass exposed at 157nm for about 10E6 pulses, and the open squares highest curve spectrum is the same as in FIG. 6, of the glass as made, exposed to 10.6E6 pulses (for comparison). The feature to notice in the comparison is the lack of a 165nm band (ODC) in the O2-containing glass. The presence of oxygen inhibits the formation of the 165nm band. Since the 165nm band is close to 157nm, reducing this absorption band significantly reduces the induced absorption at 157nm. The table below summarizes these results:
Silicon oxyfluoride glasses containing excess oxygen can be made by several methods. First, as described above, the as-made silicon oxyfluoride glasses glass can be exposed to an oxygen atmosphere at elevated temperatures to diffuse O2 into the structure. Second, the glass can be synthesized so as to contain excess oxygen. Silica glasses made by direct laydown processes(e.g., plasma) have been made with high excess oxygen levels compared to glasses made by soot preform body-to-consolidated glass body processes. Finally, the oxygen content of silicon oxyfluoride glasses made by soot preform body -to- consolidated glass body processing can be increased by consolidating under a highly oxidizing atmosphere (e.g. 50-100% O2). The invention provides silicon oxyfluoride glasses with improved resistance to
F2 laser induced absorption and methods for making them. These inventive silicon oxyfluoride glasses materials are useful for 157nm lithography applications such as photomasks, lenses, pellicles, and windows, for example.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit and scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.

Claims

CLAIMS:
1. A method of making a VUV transmitting glass, said method comprising providing a silicon oxyfluoride glass, providing a plurality of O2 molecules, doping said O2 molecules into said silicon oxyfluoride glass to provide a VUV transmitting silicon oxyfluoride glass containing O2 molecules.
2. A method as claimed in claim 1, said method including dissolving said O2 molecules into said silicon oxyfluoride glass.
3. A method as claimed in claim 1, said method including consolidating said silicon oxyfluoride glass with said O2 molecules.
4. A method as claimed in claim 1, said method including providing a silicon oxyfluoride glass which contains at least 0.1 weight percent fluorine.
5. A method as claimed in claim 1, said method including silicon oxyfluoride glass which has an OH content below 50 ppm by weight.
6. A method as claimed in claim 1 , said method including providing a silicon oxyfluoride glass which has a CI content below 5 ppm by weight.
7. A method as claimed in claim 1 , said method including providing an O2 doping treatment atmosphere, said O2 doping treatment atmosphere having an O2 concentration of at least 1015 O2 mole/cc.
8. A method as claimed in claim 7, said method including providing an O2 doping vessel for containing said O2 doping treatment atmosphere and said silicon oxyfluoride glass.
9. A method as claimed in claim 8, said method including heating said treatment atmosphere and glass to an O2 doping temperature.
10. A method as claimed in claim 9, wherein said O2 doping treatment vessel is comprised of a non-contaminant refractory material.
11. A method of making a laser durable VUV transmitting silicon oxyfluoride glass, said method comprising the steps of: providing a consolidated silicon oxyfluoride glass,
providing an O2 doping treatment atmosphere,
enveloping said silicon oxyfluoride glass with said O2 doping treatment atmosphere anc dissolving a plurality of O2 molecules from said atmosphere into said silicon oxyfluoride glass to provide a silicon oxyfluoride glass with insolution O2 molecules.
12. A method as claimed in claim 1 1, said method including heating said atmosphere and said silicon oxyfluoride glass to a pre-determined O2 doping temperature.
13. A method as claimed in claim 11, wherein providing an O2 doping treatment atmosphere includes providing an atmosphere with an O2 concentration of at least 10 O2 moles/cc.
14. A method as claimed in claim 11 , wherein providing an O2 doping treatment aattmmoosspphheerree includes providing an atmosphere with an O2 concentration of at least 10 O2 moles/cc
15. A method as claimed in claim 13, wherein said atmosphere O2 concentration is no greater than 10 O2 moles/cc.
16. A method of making a laser durable VUV transmitting silicon oxyfluoride glass, said method comprising the steps of; providing a non-consolidated silicon oxyfluoride glass precursor, providing a glass consolidation furnace with a heated consolidation zone for 5 consolidating said non-consolidated glass precursor; supplying an oxygen doping atmosphere to said consolidation furnace and consolidating said glass precursor into a consolidated silicon oxyfluoride glass wherein O2 molecules are dissolved in said consolidated silicon oxyfluoride glass.
10 17. A method as claimed in claim 16, said method including heating said oxygen doping atmosphere to a predetermined O2 doping consolidation temperature.
18. A method as claimed in claim 16, wherein supplying an oxygen doping atmosphere includes supplying an atmosphere with an O2 concentration of at least 101 15 O2 moles/cc.
19. A method as claimed in claim 16, wherein supplying an oxygen doping aattmmoosspphheerree iincludes supplying an atmosphere with an O2 concentration of at least 10 O2 moles/cc.
20
20. A method as claimed in claim 18, wherein said O2 concentration is no greater than 10 O2 moles/cc.
21. A method as claimed in claim 16, wherein providing a glass consolidation 25 furnace includes providing a silica muffle furnace.
22. A method as claimed in claim 16, wherein providing a glass consolidation furnace includes providing a plasma discharge.
3023. A VUV transmitting glass photomask substrate, said photomask substrate comprising a silicon oxyfluoride glass, said silicon oxyfluoride glass doped with a plurality of O2 molecules.
24. A photomask substrate as claimed in claim 23, said silicon oxyfluoride glass, containing at least 0.1 weight percent fluorine.
25. A photomask substrate as claimed in claim 23, said silicon oxyfluoride glass having an OH content below 50 ppm by weight.
26. A photomask substrate as claimed in claim 23, said silicon oxyfluoride glass having an OH content below 10 ppm by weight.
27. A photomask substrate as claimed in claim 23, said silicon oxyfluoride glass having an OH content below 5 ppm by weight.
28. A photomask substrate as claimed in claim 23, said silicon oxyfluoride glass having an OH content below 1 ppm by weight.
29. A photomask substrate as claimed in claim 23, said silicon oxyfluoride glass having an CI content below 5 ppm by weight.
30. A photomask substrate as claimed in claim 23, said silicon oxyfluoride glass having a 165 nm absoφtion less than 0.2 absoφtion units/5.1 mm.
31. A photomask substrate as claimed in claim 23, said silicon oxyfluoride glass having a 215 nm absoφtion less than 0.2 absoφtion units/5.1 mm.
32. A photomask substrate as claimed in claim 23, said silicon oxyfluoride glass having a resistance to laser induced 165 nm absoφtion band.
33. A photomask substrate as claimed in claim 23, said silicon oxyfluoride glass having a 165 nm absoφtion less than 0.3 absoφtion units/5.1 mm after an F2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm -pulse.
34. A photomask substrate as claimed in claim 23, said silicon oxyfluoride glass having a 215 nm absoφtion less than 0.2 absoφtion units/5.1 mm after an F2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm -pulse.
35. A photomask substrate as claimed in claim 23, said silicon oxyfluoride glass having a laser induced absoφtion at 157 nm less than 0.4 absoφtion units/5 mm after an F2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm2 -pulse.
36. A photomask substrate as claimed in claim 23, said silicon oxyfluoride glass substrate having a 157 nm laser induced delta absoφtion < .20 absoφtion units/5mm after an F2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm2-pulse.
37. A VUV transmitting silicon oxyfluoride glass, said silicon oxyfluoride glass containing a plurality of doped O2 molecules and having a resistance to VUV laser induced absoφtion bands.
38. A VUV transmitting silicon oxyfluoride glass as claimed in claim 37, said silicon oxyfluoride glass, containing at least 0.1 weight percent fluorine.
39. A VUV transmitting silicon oxyfluoride glass as claimed in claim 37, said silicon oxyfluoride glass having an OH content below 50 ppm by weight.
40. A VUV transmitting silicon oxyfluoride glass as claimed in claim 37, said silicon oxyfluoride glass having an OH content below 10 ppm by weight.
41. A VUV transmitting silicon oxyfluoride glass as claimed in claim 37, said silicon oxyfluoride glass having an OH content below 5 ppm by weight.
42. A VUV transmitting silicon oxyfluoride glass as claimed in claim 37, said silicon oxyfluoride glass having an OH content below 1 ppm by weight.
43. A VUV transmitting silicon oxyfluoride glass as claimed in claim 37, said silicon oxyfluoride glass having an CI content below 5 ppm by weight.
44. A VUV transmitting silicon oxyfluoride glass as claimed in claim 37, said silicon oxyfluoride glass having a 165 nm absoφtion less than 0.2 absoφtion units/5.1 mm.
45. A VUV transmitting silicon oxyfluoride glass as claimed in claim 37, said silicon oxyfluoride glass having a 215 nm absoφtion less than 0.2 absoφtion units/5.1 mm.
46. A VUV transmitting silicon oxyfluoride glass as claimed in claim 37, said silicon oxyfluoride glass having a resistance to laser induced 165 nm absoφtion band.
47. A VUV transmitting silicon oxyfluoride glass as claimed in claim 37, said silicon oxyfluoride glass having a 165 nm absoφtion less than 0.3 absoφtion units/5.1 mm after an F2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm -pulse.
48. A VUV transmitting silicon oxyfluoride glass as claimed in claim 37, said silicon oxyfluoride glass having a 215 nm absoφtion less than 0.2 absoφtion units/5.1 mm after an F2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm -pulse.
49. A VUV transmitting silicon oxyfluoride glass as claimed in claim 37, said silicon oxyfluoride glass having a laser induced absoφtion at 157 nm less than 0.4 absoφtion units/5mm after an F2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm -pulse.
50. A VUV transmitting silicon oxyfluoride glass as claimed in claim 37, said silicon oxyfluoride glass having a 157 nm laser induced delta absoφtion < .20 absoφtion units/5mm after an F2 excimer laser exposure of at least 9.92 E6 pulses at 2mJ/cm -pulse.
EP02714956A 2001-02-24 2002-02-11 Oxygen doping of silicon oxyfluoride glass Withdrawn EP1373151A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US997782 1992-12-29
US27113501P 2001-02-24 2001-02-24
US271135P 2001-02-24
US09/997,782 US6502426B2 (en) 2001-02-24 2001-11-28 Oxygen doping of silicon oxyfluoride glass
PCT/US2002/005237 WO2002068350A1 (en) 2001-02-24 2002-02-11 Oxygen doping of silicon oxyfluoride glass

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JP2009203142A (en) * 2008-02-29 2009-09-10 Sumitomo Electric Ind Ltd Fluorine-added quartz glass
JP6702268B2 (en) * 2017-06-15 2020-05-27 信越半導体株式会社 Epitaxial wafer manufacturing method

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US3661436A (en) * 1970-06-30 1972-05-09 Ibm Transparent fabrication masks utilizing masking material selected from the group consisting of spinels, perovskites, garnets, fluorides and oxy-fluorides
JPH03131544A (en) * 1989-06-29 1991-06-05 Sumitomo Electric Ind Ltd Furnace for glass perform for optical fiber and production thereof

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