EP1352106B1 - Tantalum and niobium billets and methods of producing the same - Google Patents
Tantalum and niobium billets and methods of producing the same Download PDFInfo
- Publication number
- EP1352106B1 EP1352106B1 EP02750302A EP02750302A EP1352106B1 EP 1352106 B1 EP1352106 B1 EP 1352106B1 EP 02750302 A EP02750302 A EP 02750302A EP 02750302 A EP02750302 A EP 02750302A EP 1352106 B1 EP1352106 B1 EP 1352106B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- tantalum
- billet
- niobium
- extruded
- diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims description 156
- 229910052715 tantalum Inorganic materials 0.000 title claims description 145
- 229910052758 niobium Inorganic materials 0.000 title claims description 73
- 239000010955 niobium Substances 0.000 title claims description 73
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 title claims description 73
- 238000000034 method Methods 0.000 title claims description 44
- 238000001125 extrusion Methods 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 238000000137 annealing Methods 0.000 claims description 17
- 238000002844 melting Methods 0.000 claims description 14
- 230000008018 melting Effects 0.000 claims description 14
- 239000011253 protective coating Substances 0.000 claims description 14
- 239000002253 acid Substances 0.000 claims description 12
- 238000005477 sputtering target Methods 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 238000010791 quenching Methods 0.000 claims 1
- 230000000171 quenching effect Effects 0.000 claims 1
- WTKKCYNZRWIVKL-UHFFFAOYSA-N tantalum Chemical compound [Ta+5] WTKKCYNZRWIVKL-UHFFFAOYSA-N 0.000 claims 1
- 150000003839 salts Chemical class 0.000 description 27
- 239000000047 product Substances 0.000 description 16
- 239000012535 impurity Substances 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 14
- 238000001953 recrystallisation Methods 0.000 description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 239000000956 alloy Substances 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 7
- 229910052742 iron Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000010960 commercial process Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000007670 refining Methods 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910001362 Ta alloys Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005242 forging Methods 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 238000010309 melting process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- -1 niobium metals Chemical class 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- APLLYCDGAWQGRK-UHFFFAOYSA-H potassium;hexafluorotantalum(1-) Chemical compound [F-].[F-].[F-].[F-].[F-].[F-].[K+].[Ta+5] APLLYCDGAWQGRK-UHFFFAOYSA-H 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical group [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910000760 Hardened steel Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000010285 flame spraying Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000000622 liquid--liquid extraction Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 150000003481 tantalum Chemical class 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000009721 upset forging Methods 0.000 description 1
- 238000010313 vacuum arc remelting Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
Definitions
- the present invention relates to tantalum and niobium metals and methods of forming products from tantalum and/or niobium, such as tantalum billets or niobium billets.
- the present invention further relates to tantalum billets or niobium billets that have a fine, uniform microstructure including a uniform grain size.
- Metal billets such as tantalum billets are commercially available from a variety of manufacturers. Typically, these billets are defined by their minimum thickness and/or aspect ratio. Typical billets are cylindrical in shape and have a diameter of 2 1 ⁇ 2 inches 6,35 cm or more and/or have an aspect ratio of L/D of greater than 0.5. Thus, billets are not metal plates or slabs and are typically an intermediate product formed from an ingot, such as a tantalum ingot. Tantalum billets are then typically further processed by means such as forging into other forms used by a variety of end users for such uses as sputtering targets and the like. The tantalum billets provided to these end users typically do not have a fine and uniform grain size.
- a feature of the present invention is to provide tantalum billets or niobium billets having a substantially uniform grain size.
- Another feature of the present invention is to provide methods to make tantalum billets or niobium billets having a substantially uniform grain size.
- Another feature of the present invention is to provide intermediate billet products which can be used to form end use products such as sputtering targets wherein the end use products as well as the intermediate billet products have a substantially uniform grain size.
- the present invention relates to a tantalum or niobium billet having a substantially uniform grain size.
- the present invention relates to an extruded tantalum or niobium billet as defined in claims 1 to 4.
- the present invention further relates to the use of the extruded tantalum as niobium billet for forming a sputtering target , a capacitor can or a resistive film comprising the extruded tantalum or niobium billet of the present invention at least as a compound.
- the present invention relates to processes for making the extruded tantalum or niobium billet of the present invention, as defined in claims 9 to 18.
- the large billets are either placed into a can which is then evacuated and sealed, or the billets are coated with a protective coating, which protects the large billets from oxidation during subsequent thermal processing and can also serve as a lubricant during subsequent extrusion operations.
- the large billets are next heated at a sufficient temperature to ensure at least the partial recrystallization of the extruded tantalum billet and preferably the full recrystallization of the tantalum billet as defined in the claims.
- the can or protective coating can be removed and the extruded rod, if desired, can be cut into smaller billets or pieces and further processed by conventional methods, such as forging and the like.
- the present invention relates to tantalum billets and/or niobium billets having a substantially uniform grain size.
- billets are cylindrical in shape or can be shapes other than circular cylinders such as forms having an oval, square, rectangular, or polygonal cross-section.
- the present invention relates to methods of making the tantalum billets and niobium billets of the present invention.
- the billet has a substantially uniform grain size throughout the diameter and length of the billet.
- a substantially uniform grain size measured in accordance to ASTM-E112, determined about any incremental area throughout the cross section of the extruded billet, does not deviate by more than about +/- 100 microns from the average ASTM grain size determined across the entire cross section of the extruded billet.
- the size of the grains about the cross section of the extruded billet preferably vary uniformly in accordance to a normal or Poissons distribution, and preferably does not exhibit a duplex microstructure as evident by a bimodal grain size distribution.
- the aspect ratio of the longitudinal grains preferably does not exceed 20. Longitudinal grains are defined as those contained within any plane within the billet whose pole is perpendicular to the extrusion direction.
- the extruded and annealed billet exhibits a partially recrystallized microstructure, i.e. the billet is 98% or more recrystallized, and preferably the extruded billet is more than 99% recrystrallized.
- the annealed billet in addition, has an average grain size of 150 ⁇ m (microns) or less, More preferably, the average grain size of the tantalum billet or the niobium billet of the present invention is about 100 microns or less, and more preferably about 50 microns or less.
- a preferred average grain size range is from about 25 to about 150 microns and more preferably an average grain size range of from about 25 microns to about 100 microns.
- the billets of the present invention preferably have a fine, uniform microstructure.
- the extruded billets of the present invention also have excellent texture characteristics, which are especially suitable for such uses as sputtering targets.
- the tantalum present in the tantalum billet has a purity of at least 99.99%
- the tantalum metal has a purity of at least 99.995%.
- Preferred ranges include from about 99.99% to about 99.995% and from about 99.995 % to about 99.999 % and from about 99.999 % to about 99.9995 %.
- the tantalum that is present in the billet of the present invention can further include other metals and thus be a tantalum alloy billet which comprises the high purity tantalum metal as one of the components of the alloy.
- tantalum alloy billet of the present invention includes, but are not limited to, yttrium, niobium, tungsten, molybdenum, titanium, silicon, halfnium, iron, nickel, chromium, and the like.
- the high purity tantalum that is used to form the tantalum billet of the present invention can be obtained following the procedures described in international Published Application No. WO 00/31310 . Similar purity levels apply to niobium.
- a tantalum or niobium billet has a cylindrical shape and has a diameter that is 3 1 ⁇ 2 inches (8.9 cm) 14 or greater and an aspect ratio L/D of greater than 0.5 and preferably of 1.0 and more preferably of 2.0.
- the billet of the present invention in a preferred embodiment preferably has a diameter of from about 3 1 ⁇ 2 inches (8.9 cm) to about 5 inches (12.7 cm) and more preferably from about 3 1 ⁇ 2 inches (8.9 cm) to about 4 1 ⁇ 2 inches (11.4 cm) and even more preferably about 3 1 ⁇ 2 inches (9.84 cm) with the billet having any height such as, but not limited to, 5 to 7 inches (12.7 to 17.8 cm).
- the billets of the present invention can then be subsequently formed into end use products such as sputtering targets by cutting the billets into desired sizes and then upset forging the billets into disks which can then be used as planar sputtering targets.
- the billets can be rolled to produce sheet or plate.
- the billets of the present invention can also be used for a variety of other uses such as, but not limited to hollow cathode magnetron (HCM) sputtering targets, chemical energy (CE) warhead liners, and feedstock for deep-drawing applications such as cups, crucibles and drawn seamless tubes.
- HCM hollow cathode magnetron
- CE chemical energy
- feedstock for deep-drawing applications such as cups, crucibles and drawn seamless tubes.
- the billets of the present invention can be used in the same manner as conventional tantalum and niobium billets except the billets of the present invention have the improved properties with respect to uniform grain size and a small average grain size of about 150 ⁇ m (microns) or less which leads to a variety of desired properties such as, but not limited to, more homogeneous deformation and work hardening throughout the workpiece during subsequent processing.
- This allows for a reduction in the temperature of subsequent annealing operations and allows for the attainment of a finer, more homogeneous microstructure in the final formed product than could otherwise be realized by conventional processing.
- the billets of the present invention are preferably made as follows.
- a tantalum ingot or niobium ingot is obtained and cut into large billet sizes of from 6 to about 14 inches (15.2 to 35.6 cm) and preferably from about 8 to 11 inches (20.3 to 27.9 cm) in diameter and most preferably about ten inches (29.4 cm) in diameter with the length being any length.
- suitable lengths include, but are not limited to, from about 10 to about 40 inches (25.4 to 101.6 cm) and more preferably from about 15 to about 30 inches (38.1 to 76.2 cm).
- This billet would be the starting billet size prior to converting this billet into the tantalum or niobium billet of the present invention.
- this starting billet is then either placed in a metal can which can be evacuated and sealed, or the billet can be coated with a protective coating.
- the metal can or protective coating preferably prevents the oxidation of the surface of the billet and acts as a lubricant during the subsequent processing.
- any suitable can or protective coating can be used as long it will prevent or reduce oxidation of the surface of the billet and will not deteriorate during subsequent processing steps.
- a suitable protective coating would be a copper coating which can be applied by conventional techniques such as flame spraying.
- other protective coatings such as glass-based coatings, may be employed. At substantially high extrusion temperatures, a high melting point metal can be used in combination with a glass coating.
- a metal can such as molybdenum
- a metal can can be used to protect the tantalum or niobium from contamination during soaking and extruding operations, while the glass coating provides lubrication.
- the glass particles are embedded in the inexpensive can metal and not in the tantalum or niobium billet.
- the glass contaminants can then be removed by machining the can metal without having to machine the underlying tantalum or niobium billet, resulting in an increased yield of the more expensive tantalum or niobium material.
- the starting billet can be heated at a sufficient temperature and for a sufficient time to assure that the deformation and stored energy is uniformly distributed in the workpiece during and after extrusion, and preferably cause at least the partial dynamic recrystallization and most preferably the full recrystallization of the billet during extrusion.
- a conventional extruder can be used for extruding metals having a liner size equal to or greater than the length and diameter of the pre-extruded billet plus the can or protective coating.
- an extrusion die fabricated from hardened steel having a taper of about 45° and an inside diameter of about 4 inches can be used.
- the extrusion die set, prior to introduction of the starting billet can be generally heated to a temperature near the billet soak temperature to prepare for extrusion. Suitable temperature ranges are from about 1200°F (649°C) to about 2950° (1621°C) and preferably about 1800°F-1900°F (982-1038°C) for tantalum. Once the billet is heated for a sufficient time so that the center of the billet is at or near the soak temperature, then the starting billet can then be introduced into the extruder and extruded.
- the extruder utilizes ram speeds of from about 0.25 to 25.4 cm/second (0.1 to about 10 inches/second), depending upon the capabilities of the extrusion machine.
- the extrusion preferably reduces the diameter of the billet to about 7.6 to 10.3 cm (3 to 4 inches).
- the combination of soaking the billet at an elevated temperature and the subsequent adiabatic heating incurred during extrusion leads to the partial recrystallization and preferably to the full recrystallization of the billet.
- the resultant billet contains a substantially uniform grain size throughout the billet with an average grain size of about 150 ⁇ m (microns) or less and preferably an average grain size of about 100 ⁇ m (microns) or less.
- the billet can be produced by a single pass through the extruder, or by a progression of extrusion operations, or by a combination of extrusion and conventional deformation processes.
- the extruded billet After exiting the extruder, the extruded billet is preferably allowed to air-cool, or optionally can be water-quenched to quickly reduce the temperature of the extruded billet and prevent grain growth.
- the can metal or protective coating can then be removed by dissolving in acid, or machine cleaning, or any other type of technique used to remove coatings from metals.
- the extruded billet is preferably annealed to attain a partially recrystallized microstructure, and most preferably to achieve a fully recrystallized grain structure with a homogenous or uniform grain size and an average grain size of 150 ⁇ m (microns) or less and preferably under 100 ⁇ m (microns).
- the annealing can occur at any temperature to achieve desired levels of recrystallization such as from about 950°C or less to about 1150°C or more, and preferably occurs in a vacuum, such as at least 13.33mPa (1 ⁇ 10 -4 Torr).
- the annealing time can be for 2 hours or other suitable times, more than or less than 2 hours.
- the annealing process preferably includes conventional acid pickling or other surface cleaning techniques prior to annealing to remove any surface contaminants.
- the billet can then be cut into smaller pieces as described above and processed into end use products as with any type of conventional billets.
- the billet of the present invention can be forged to a disk and used as a sputtering target.
- the extruded billet of the present invention having a substantially uniform grain size as well as a fine grain size, the end use products formed from the billets have the same excellent properties which are beneficial for the reasons stated earlier.
- the extrusion of the billets can occur in the manner described above but the extruded billet does not need to be at least partially recrystallized by the extrusion process.
- the extrusion can occur at any temperature such as from about ambient or room temperature (e.g., 20°C - 25°C) to temperatures below the melting point of the tantalum or niobium.
- the extrusion temperature is from about 1200°F (649°C) to about 5400°F (2982°C) for tantalum.
- the extruded billet can then be preferably subjected to one or more annealing steps in order to cause at least partial, if not full recrystallization of the extruded billet.
- the annealing temperature is a temperature sufficient to cause at least partial recrystallization of the extruded billet and preferably full recrystallization of the extruded billet.
- Preferred annealing temperatures are from about 950°C to about 1150°C with respect to tantalum, for a preferred annealing time of 2 hours.
- the ingot which is used to form the billets of the present invention can be obtained by conventional techniques used to form tantalum or niobium ingots.
- the tantalum can be obtained from ore and subsequently crushed and the tantalum separated from the crushed ore through the use of an acid solution and a density separation of the acid solution containing the tantalum from the acid solution containing niobium and other impurities.
- the acid solution containing the tantalum can then be crystallized into a salt and this tantalum containing salt is then reacted with pure sodium in a vessel having an agitator typically constructed of nickel alloy material wherein the salt is then dissolved in water to obtain tantalum powder which can then be melted by a variety of melting techniques such electron beam melting, vacuum arc remelting, or plasma melting.
- the starting ingot used to form the starting tantalum billet is a high purity tantalum ingot.
- a process that can be used to make the high purity tantalum metal of the present invention involves a refining process, a vacuum melting process, and a thermal mechanical process.
- the refining process involves the steps of extracting tantalum metal preferably in the form a powder from ore containing tantalum and preferably the ore-containing tantalum selected has low amounts of impurities, especially, low amounts of niobium, molybdenum, and tungsten.
- the amount of niobium, molybdenum, and tungsten is below about 10 ppm, and most preferably is below about 8 ppm.
- the vacuum melting process is used to purge low melting point impurities, such as alkydes and transition metals from the tantalum while consolidating the tantalum material into a fully dense, malleable ingot. Then, after this process, the ingot can be mechanically worked, which helps to break-up the as-cast grain structure, to a size and form appropriate for extrusion.
- the high purity tantalum metal preferably may be made by reacting a salt-containing tantalum with at least one agent (e.g. compound or element) capable of reducing this salt to the tantalum metal and further results in the formation of a second salt in a reaction container.
- the reaction container can be any container typically used for the reaction of metals and should withstand high temperatures on the order of about 800°C to about 1,200°C.
- the reaction container or the liner in the reaction container which comes in contact with the salt-containing tantalum and the agent capable of reducing the salt to tantalum, is made from a material having the same or higher vapor pressure as tantalum at the melting point of the tantalum.
- the agitator in the reaction container can be made of the same material or can be lined as well.
- the liner can exist only in the portions of the reaction container and agitator that come in contact with the salt and tantalum.
- metal materials which can form the liner or reaction container include, but are not limited to, metal-based materials made from nickel, chromium, iron, manganese, titanium, zirconium, hafnium, vanadium, ruthenium, cobalt, rhodium, palladium, platinum, or any combination thereof or alloy thereof as long as the alloy material has the same or higher vapor pressure as the melting point of tantalum metal.
- the metal is a nickel or a nickel-based alloy, a chromium or a chromium-based alloy, or an iron or an iron-based alloy.
- the salt-containing tantalum can be any salt capable of having tantalum contained therein such as a potassium-fluoride tantalum.
- the agent capable of reducing the salt to tantalum and a second salt in the reaction container is any agent which has the ability to result in reducing the salt-containing tantalum to just tantalum metal and other ingredients (e.g. salt(s)) which can be separated from the tantalum metal, for example, by dissolving the salts with water or other aqueous sources.
- this agent is sodium.
- Other examples include, but are not limited to, lithium, magnesium, calcium, potassium, carbon, carbon monoxide, ionic hydrogen, and the like.
- the second salt which also is formed during the reduction of the salt-containing tantalum is sodium fluoride. Details of the reduction process which can be applied to the present invention in view of the present application are set forth in Kirk-Othmer, Encyclopedia of Chemical Technology, 3rd Edition, Vol. 22, pp. 541-564 , U.S. Patent Nos. 2,950,185 ; 3,829,310 ; 4,149,876 ; and 3,767,456 . Further details of the processing of tantalum can be found in U.S. Patent Nos. 5,234,491 ; 5,242,481 ; and 4,684,399 .
- low purity tantalum such as ore-containing tantalum.
- One of the impurities that can be substantially present with the tantalum is niobium.
- Other impurities at this stage are tungsten, silicon, calcium, iron, manganese, etc.
- low purity tantalum can be purified by mixing the low purity tantalum which has tantalum and impurities with an acid solution.
- the low purity tantalum, if present as an ore, should first be-crushed before being combined with an acid solution.
- the acid solution should be capable of dissolving substantially all of the tantalum and impurities, especially when the mixing is occurring at high temperatures.
- a liquid solid separation can occur which will generally remove any of the undissolved impurities.
- the solution is further purified by liquid-liquid extraction.
- Methyl isobutyl ketone (MIBK) can be used to contact the tantalum rich solution, and deionized water can be added to create a tantalum fraction.
- MIBK Methyl isobutyl ketone
- the amount of niobium present in the liquid containing tantalum is generally below about 25 ppm.
- this salt will be a potassium tantalum fluoride salt. More preferably, this salt is K 2 TaF 7 .
- This salt is then reacted with an agent capable of reducing the salt into I) tantalum and 2) a second salt as described above.
- This compound will typically be pure sodium and the reaction will occur in a reaction container described above.
- the second salt byproducts can be separated from the tantalum by dissolving the salt in an aqueous source and washing away the dissolved salt. At this stage, the purity of the tantalum is typically 99.50 to 99.99% Ta.
- any impurities remaining can be removed through melting of the tantalum powder.
- the tantalum powder can be melted a number of ways such as a vacuum arc remelt or an electron beam melting.
- the vacuum during the melt will be sufficient to remove substantially any existing impurities from the recovered tantalum so as to obtain high purity tantalum.
- the melting occurs in a high vacuum such as 13.33 mPa (10 -4 Torr) or more.
- the pressure above the melted tantalum is lower than the vapor pressures of the metal impurities in order for these impurities, such as nickel and iron to be vaporized.
- the diameter of the cast ingot should be as large as possible, preferably greater than (9 1 ⁇ 2 inches) 24.13cm. The large diameter assures a greater melt surface to vacuum interface which enhances purification rates.
- the large ingot diameter allows for a greater amount of cold work to be imparted to the metal during processing, which improves the attributes of the final products.
- the electron beam processing preferably occurs at a melt rate of from about 136.2 to 263.2 kg (300 to about 800 lbs) per hour using 20,000 to 28,000 volts and 15 to 40 amps, and under a vacuum of from about 133.3 to 0.133 mPa (1 X 10 -3 ) to about 1 X 10 -6 Torr) More preferably, the melt rate is from about 181.6 to 272.4 kg (400 to about 600 lbs) per hour using from 24,000 to 26,000 volts and 17 to 36 amps, and under a vacuum of from about 13.3 to 1.33 mPa (1 X 10 -4 to 1 x 10 -5 Torr).
- the melt rate is preferably of (500 to 2,000 lbs) 272.5 to 1090 kg per hour using 25-45 volts and 12,000 to 22,000 amps under a vacuum of 2666 to 13.3 mPa (2 X 10 -2 to 1 X 10 -4 Torr) and more preferably 436 to 654 kg (800 to 1200 lbs.) per hour at from 30 to 60 volts and 16,000 to 18,000 amps, and under a vacuum of from (2 x 10 -2 to 1 x 10 -4 Torr.) 2666 to 13.3 mPa.
- the resulting high purity metal ingot preferably has 10 ppm or less metallic impurities and preferably 50 ppm or less 02, 25 ppm or less N2, and 25 ppm or less carbon. If a purity level of about 99.995 is desired, than the resulting high purity metal preferably has metallic impurities of about 50 ppm or less, and preferably 50 ppm or less 02, 25 ppm or less N2, and 25 ppm or less carbon. This ingot can then be used in the manner described above to form the tantalum billets of the present invention.
- niobium billets can be made following the above-described extruding details. Accordingly, a niobium billet having a substantially uniform grain size is obtained.
- the preferred parameters for the grain size and other characteristics are the same as for the tantalum parameters provided above, taking into account the different melting temperature and other working conditions of niobium (e.g., extruding at lower temperatures, such as from about 1000 °C to about 1650 °C) that are known to those skilled in the art.
- the sample slice was annealed in a vacuum of at least 66.5 mPa (5x10 -4 Torr) for 2 hours.
- Metallographic specimens representing longitudinal cross-sections of the center and edge of the sample slice were polished in accordance to standard metallographic procedures, and etched in a solution to 50HF-50HNO 3 for 30-60 seconds. Results of the metallographic examination of the commercially produced tantalum billet product are summarized in Figures 2(A) and 2(B) .
- An ingot of the present invention was a 25.4 cm (10") diameter ingot weighing (3734 pounds) 1695 kg. Chemistry results from samples taken from the top, middle, and bottom sections of the ingot are also included in Figures 2(A) and 2(B) , by reference to ⁇ and extrusion temperature. This second ingot was cut into 4 sections approximately 50.8 cm (20") long and designated A, B, C, and D. Sections A-D were portioned from the bottom to the top of the ingot, respectively, and hot extruded as described below and shown in Figures 1 and 2 (A-B):
- FIGS 3(A) and 3(B) Photomicrographs showing the grain structure along the longitudinal plane at the center and edge regions of the commercially produced billet are shown in Figures 3(A) and 3(B) .
- the billet axis is perpendicular to the micron scale on the images.
- Figures 3(A) and 3(B) show many of the issues associated with the microstructure of commercially produced tantalum billet.
- the center of the billet contains a duplex grain structure comprised of broad bands of unrecrystallized material containing small islands of crystallites adjacent to regions containing large, elongated grains.
- the center of the commercial billet exhibited a grain size range from about 20 to about 245 ⁇ m., the largest range of grain size observed in all materials examined.
- Second, the grain structure character along the edge of the commercial billet was fully recrystallized and relatively uniform. This was significantly different than that in the center of the billet, and reflected the microstructural inhomogeneity seen in commercially produced tantalum billets.
- Photomicrographs showing the center and edge section of extruded rod A, annealed at 950, 1050, and 1150°C, are provided in Figures 4(A) and 4(B) , 5(A) and 5(B) , and 6(A) and 6(B) , respectively. Comparing the images in Figures 4-6 demonstrate the general effect of annealing temperature on the microstructure.
- the grain size character seen in Figures 4(A) and 4(B) were similar to that observed in the commercial billet, but with noticeably lesser amount of duplexing.
- increasing the annealing temperature from 950 to 1050°C did not dramatically increase the average grain size of the extruded tantalum billets, but did enhance grain size uniformity and percent recrystallization.
- An anneal temperature of 1150°C did promote some grain growth without sacrificing uniformity in the extruded tantalum billets. The higher temperature anneal assured that the microstructure throughout the extruded tantalum billet was uniform and fully recrystallized
- the information developed in this example concludes that the optimum process involves extruding large 24.13 cm (9.5") diameter tantalum ingot sections at a temperature of 1038°C (1900°F) to produce a 10.16 cm (4") diameter as-extruded rod that can machined into 9.53 cm (3.75") diameter billets.
- a fully recrystallized and relatively uniform microstructure having an average grain size below 100 ⁇ m across the entire cross section of the billet is achieved after annealing the extruded tantalum billet at a temperature of 1050-1 150°C.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Extrusion Of Metal (AREA)
- Physical Vapour Deposition (AREA)
- Extrusion Moulding Of Plastics Or The Like (AREA)
Description
- The present invention relates to tantalum and niobium metals and methods of forming products from tantalum and/or niobium, such as tantalum billets or niobium billets. The present invention further relates to tantalum billets or niobium billets that have a fine, uniform microstructure including a uniform grain size.
- Metal billets, such as tantalum billets are commercially available from a variety of manufacturers. Typically, these billets are defined by their minimum thickness and/or aspect ratio. Typical billets are cylindrical in shape and have a diameter of 2 ½
inches 6,35 cm or more and/or have an aspect ratio of L/D of greater than 0.5. Thus, billets are not metal plates or slabs and are typically an intermediate product formed from an ingot, such as a tantalum ingot. Tantalum billets are then typically further processed by means such as forging into other forms used by a variety of end users for such uses as sputtering targets and the like. The tantalum billets provided to these end users typically do not have a fine and uniform grain size. Instead, commercially produced tantalum billets have a grain structure that varies between the center and edge of the billet. The center of the commercial tantalum billet typically has a microstructure composed of broad bands of larger, elongated grains adjacent to regions of varying fine grain size or of unrecrystallized material. Conversely, the outer portions of the commercial tantalum billets have a relatively fine and uniform grain structure compared to the center of the billet. Thus, products forged from billets having a coarse, non-uniform grain structure may also exhibit a coarse, non-uniform grain structure. For many high performance applications for tantalum such as sputtering targets and chemical energy munition warheads, a non-uniform grain structure has been reported to detrimentally impact product performance (S.I. Wright, G.T. Gray, and A.D. Rollett, Textural and Microstructural Gradient Effects on the Mechanical Behavior of a Tantalum Plate, Metallurgical and Materials Transactions_A, 25A, pp.1025-1031, 1994; C.A. Michaluk, R.O. Burt, and D.P. Lewis, Tantalum 101: Economics and Technology of Ta Materials, Semiconductor International, Vol. 23, No.8, pp.271-278, 2000; C.A. Michaluk, Correlating Discrete Orientation and Grain Size to the Sputter Deposition Properties of Tantalum, Journal of Electronic Material, Vol. 31, No.1, pp.2-9, 2002). - Accordingly, there is a need to provide tantalum and niobium billets having a uniform grain size and preferably made from high purity tantalum and/or niobium. In addition, there is a need to provide methods to make such a tantalum billet or niobium billet. G.I. Friedman, "Grain Size Refinement in a Tantalum Ingot", Metallurgical Transactions, vol. 2, January 1971 (1971-01), pages 337-341 relates to grain size refinement in tantalum ingots having a purity of about 99.95%.
- A feature of the present invention is to provide tantalum billets or niobium billets having a substantially uniform grain size.
- Another feature of the present invention is to provide methods to make tantalum billets or niobium billets having a substantially uniform grain size.
- Another feature of the present invention is to provide intermediate billet products which can be used to form end use products such as sputtering targets wherein the end use products as well as the intermediate billet products have a substantially uniform grain size.
- Additional features and advantages of the present invention will be set forth in part in the description that follows, and in part will be apparent from the description, or may be learned by practice of the present invention. The objectives and other advantages of the present invention will be realized and attained by means of the elements and combinations particularly pointed out in the description and appended claims.
- To achieve these and other advantages, and in accordance with the purposes of the present invention, as embodied and broadly described herein, the present invention relates to a tantalum or niobium billet having a substantially uniform grain size. In particular, the present invention relates to an extruded tantalum or niobium billet as defined in claims 1 to 4.
- The present invention further relates to the use of the extruded tantalum as niobium billet for forming a sputtering target , a capacitor can or a resistive film comprising the extruded tantalum or niobium billet of the present invention at least as a compound.
- Further, the present invention relates to processes for making the extruded tantalum or niobium billet of the present invention, as defined in claims 9 to 18.
- In these processes, the large billets are either placed into a can which is then evacuated and sealed, or the billets are coated with a protective coating, which protects the large billets from oxidation during subsequent thermal processing and can also serve as a lubricant during subsequent extrusion operations. The large billets are next heated at a sufficient temperature to ensure at least the partial recrystallization of the extruded tantalum billet and preferably the full recrystallization of the tantalum billet as defined in the claims. Afterwards, the can or protective coating can be removed and the extruded rod, if desired, can be cut into smaller billets or pieces and further processed by conventional methods, such as forging and the like.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are intended to provide a further explanation of the present invention, as claimed.
-
-
Figure 1 is a flowchart showing a typical commercial process compared to a preferred embodiment of the process of the present invention. -
Figures 2(A) and 2(B) provide tables showing experimental results relating to various parameters for certain materials made or used in the examples of the present application. -
Figures 3 (A-B)-9(A-B) are photomicrographs showing the grain structure of various samples used and/or prepared in the examples of the present application. - The present invention relates to tantalum billets and/or niobium billets having a substantially uniform grain size. For purposes of this invention, billets are cylindrical in shape or can be shapes other than circular cylinders such as forms having an oval, square, rectangular, or polygonal cross-section. Also, the present invention relates to methods of making the tantalum billets and niobium billets of the present invention.
- With respect to the tantalum billet or the niobium billet, the billet has a substantially uniform grain size throughout the diameter and length of the billet. For purposes of the present invention, a substantially uniform grain size, measured in accordance to ASTM-E112, determined about any incremental area throughout the cross section of the extruded billet, does not deviate by more than about +/- 100 microns from the average ASTM grain size determined across the entire cross section of the extruded billet. In addition, the size of the grains about the cross section of the extruded billet preferably vary uniformly in accordance to a normal or Poissons distribution, and preferably does not exhibit a duplex microstructure as evident by a bimodal grain size distribution. Furthermore, the aspect ratio of the longitudinal grains preferably does not exceed 20. Longitudinal grains are defined as those contained within any plane within the billet whose pole is perpendicular to the extrusion direction.
- The extruded and annealed billet exhibits a partially recrystallized microstructure, i.e. the billet is 98% or more recrystallized, and preferably the extruded billet is more than 99% recrystrallized. The annealed billet, in addition, has an average grain size of 150 µm (microns) or less, More preferably, the average grain size of the tantalum billet or the niobium billet of the present invention is about 100 microns or less, and more preferably about 50 microns or less. A preferred average grain size range is from about 25 to about 150 microns and more preferably an average grain size range of from about 25 microns to about 100 microns. The billets of the present invention preferably have a fine, uniform microstructure.
- Preferably, the extruded billets of the present invention also have excellent texture characteristics, which are especially suitable for such uses as sputtering targets.
- The tantalum present in the tantalum billet has a purity of at least 99.99% Preferably, the tantalum metal has a purity of at least 99.995%. Preferred ranges include from about 99.99% to about 99.995% and from about 99.995 % to about 99.999 % and from about 99.999 % to about 99.9995 %. The tantalum that is present in the billet of the present invention can further include other metals and thus be a tantalum alloy billet which comprises the high purity tantalum metal as one of the components of the alloy. Other components which can form the tantalum alloy billet of the present invention include, but are not limited to, yttrium, niobium, tungsten, molybdenum, titanium, silicon, halfnium, iron, nickel, chromium, and the like. The high purity tantalum that is used to form the tantalum billet of the present invention can be obtained following the procedures described in international Published Application No.
WO 00/31310 - As described above, for purposes of the present invention, a tantalum or niobium billet has a cylindrical shape and has a diameter that is 3 ½ inches (8.9 cm) 14 or greater and an aspect ratio L/D of greater than 0.5 and preferably of 1.0 and more preferably of 2.0. The billet of the present invention in a preferred embodiment preferably has a diameter of from about 3 ½ inches (8.9 cm) to about 5 inches (12.7 cm) and more preferably from about 3 ½ inches (8.9 cm) to about 4 ½ inches (11.4 cm) and even more preferably about 3 ½ inches (9.84 cm) with the billet having any height such as, but not limited to, 5 to 7 inches (12.7 to 17.8 cm).
- As stated earlier, the billets of the present invention can then be subsequently formed into end use products such as sputtering targets by cutting the billets into desired sizes and then upset forging the billets into disks which can then be used as planar sputtering targets. In addition, the billets can be rolled to produce sheet or plate. The billets of the present invention can also be used for a variety of other uses such as, but not limited to hollow cathode magnetron (HCM) sputtering targets, chemical energy (CE) warhead liners, and feedstock for deep-drawing applications such as cups, crucibles and drawn seamless tubes.
- Essentially, the billets of the present invention can be used in the same manner as conventional tantalum and niobium billets except the billets of the present invention have the improved properties with respect to uniform grain size and a small average grain size of about 150 µm (microns) or less which leads to a variety of desired properties such as, but not limited to, more homogeneous deformation and work hardening throughout the workpiece during subsequent processing. This, in turn, allows for a reduction in the temperature of subsequent annealing operations and allows for the attainment of a finer, more homogeneous microstructure in the final formed product than could otherwise be realized by conventional processing.
- The billets of the present invention are preferably made as follows. A tantalum ingot or niobium ingot is obtained and cut into large billet sizes of from 6 to about 14 inches (15.2 to 35.6 cm) and preferably from about 8 to 11 inches (20.3 to 27.9 cm) in diameter and most preferably about ten inches (29.4 cm) in diameter with the length being any length. Examples of suitable lengths include, but are not limited to, from about 10 to about 40 inches (25.4 to 101.6 cm) and more preferably from about 15 to about 30 inches (38.1 to 76.2 cm). This billet would be the starting billet size prior to converting this billet into the tantalum or niobium billet of the present invention.
- Preferably, this starting billet is then either placed in a metal can which can be evacuated and sealed, or the billet can be coated with a protective coating. The metal can or protective coating preferably prevents the oxidation of the surface of the billet and acts as a lubricant during the subsequent processing. Thus, any suitable can or protective coating can be used as long it will prevent or reduce oxidation of the surface of the billet and will not deteriorate during subsequent processing steps. A suitable protective coating would be a copper coating which can be applied by conventional techniques such as flame spraying. Depending upon the extrusion temperatures discussed below, other protective coatings, such as glass-based coatings, may be employed. At substantially high extrusion temperatures, a high melting point metal can be used in combination with a glass coating. For instance, a metal can, such as molybdenum, can be used to protect the tantalum or niobium from contamination during soaking and extruding operations, while the glass coating provides lubrication. Following extrusion, the glass particles are embedded in the inexpensive can metal and not in the tantalum or niobium billet. The glass contaminants can then be removed by machining the can metal without having to machine the underlying tantalum or niobium billet, resulting in an increased yield of the more expensive tantalum or niobium material.
- Once the can is in place or the protective coating is preferably applied, the starting billet can be heated at a sufficient temperature and for a sufficient time to assure that the deformation and stored energy is uniformly distributed in the workpiece during and after extrusion, and preferably cause at least the partial dynamic recrystallization and most preferably the full recrystallization of the billet during extrusion. As an example, a conventional extruder can be used for extruding metals having a liner size equal to or greater than the length and diameter of the pre-extruded billet plus the can or protective coating. As an example, an extrusion die fabricated from hardened steel having a taper of about 45° and an inside diameter of about 4 inches can be used. The extrusion die set, prior to introduction of the starting billet can be generally heated to a temperature near the billet soak temperature to prepare for extrusion. Suitable temperature ranges are from about 1200°F (649°C) to about 2950° (1621°C) and preferably about 1800°F-1900°F (982-1038°C) for tantalum. Once the billet is heated for a sufficient time so that the center of the billet is at or near the soak temperature, then the starting billet can then be introduced into the extruder and extruded.
- Typically, the extruder utilizes ram speeds of from about 0.25 to 25.4 cm/second (0.1 to about 10 inches/second), depending upon the capabilities of the extrusion machine. In the preferred embodiment, if the starting billet has a diameter of about 25.9 cm (10 inches), the extrusion preferably reduces the diameter of the billet to about 7.6 to 10.3 cm (3 to 4 inches). The combination of soaking the billet at an elevated temperature and the subsequent adiabatic heating incurred during extrusion leads to the partial recrystallization and preferably to the full recrystallization of the billet. The resultant billet contains a substantially uniform grain size throughout the billet with an average grain size of about 150 µm (microns) or less and preferably an average grain size of about 100 µm (microns) or less. The billet can be produced by a single pass through the extruder, or by a progression of extrusion operations, or by a combination of extrusion and conventional deformation processes.
- After exiting the extruder, the extruded billet is preferably allowed to air-cool, or optionally can be water-quenched to quickly reduce the temperature of the extruded billet and prevent grain growth. In the preferred method, the can metal or protective coating can then be removed by dissolving in acid, or machine cleaning, or any other type of technique used to remove coatings from metals.
- Once the protective coating or can is removed, the extruded billet is preferably annealed to attain a partially recrystallized microstructure, and most preferably to achieve a fully recrystallized grain structure with a homogenous or uniform grain size and an average grain size of 150 µm (microns) or less and preferably under 100 µm (microns). The annealing can occur at any temperature to achieve desired levels of recrystallization such as from about 950°C or less to about 1150°C or more, and preferably occurs in a vacuum, such as at least 13.33mPa (1×10-4 Torr). The annealing time can be for 2 hours or other suitable times, more than or less than 2 hours. The annealing process preferably includes conventional acid pickling or other surface cleaning techniques prior to annealing to remove any surface contaminants. The billet can then be cut into smaller pieces as described above and processed into end use products as with any type of conventional billets. For instance, the billet of the present invention can be forged to a disk and used as a sputtering target. As stated earlier, with the extruded billet of the present invention having a substantially uniform grain size as well as a fine grain size, the end use products formed from the billets have the same excellent properties which are beneficial for the reasons stated earlier.
- As an option or alternative embodiment, the extrusion of the billets can occur in the manner described above but the extruded billet does not need to be at least partially recrystallized by the extrusion process. When recrystallization does not need to occur during the extrusion process, the extrusion can occur at any temperature such as from about ambient or room temperature (e.g., 20°C - 25°C) to temperatures below the melting point of the tantalum or niobium. Preferably, the extrusion temperature is from about 1200°F (649°C) to about 5400°F (2982°C) for tantalum. If extrusion occurs with very little recrystallization occurring in the extruded billet or does not occur at all, the extruded billet can then be preferably subjected to one or more annealing steps in order to cause at least partial, if not full recrystallization of the extruded billet. The annealing temperature is a temperature sufficient to cause at least partial recrystallization of the extruded billet and preferably full recrystallization of the extruded billet. Preferred annealing temperatures are from about 950°C to about 1150°C with respect to tantalum, for a preferred annealing time of 2 hours. As indicated above, it is preferred to subject the extruded billet to conventional cleaning steps such as conventional acid pickling prior to any annealing to remove any surface contaminants.
- The ingot which is used to form the billets of the present invention can be obtained by conventional techniques used to form tantalum or niobium ingots. For instance, the tantalum can be obtained from ore and subsequently crushed and the tantalum separated from the crushed ore through the use of an acid solution and a density separation of the acid solution containing the tantalum from the acid solution containing niobium and other impurities. The acid solution containing the tantalum can then be crystallized into a salt and this tantalum containing salt is then reacted with pure sodium in a vessel having an agitator typically constructed of nickel alloy material wherein the salt is then dissolved in water to obtain tantalum powder which can then be melted by a variety of melting techniques such electron beam melting, vacuum arc remelting, or plasma melting.
- Preferably, the starting ingot used to form the starting tantalum billet is a high purity tantalum ingot. Generally, a process that can be used to make the high purity tantalum metal of the present invention involves a refining process, a vacuum melting process, and a thermal mechanical process. In this process or operation, the refining process involves the steps of extracting tantalum metal preferably in the form a powder from ore containing tantalum and preferably the ore-containing tantalum selected has low amounts of impurities, especially, low amounts of niobium, molybdenum, and tungsten. More preferably, the amount of niobium, molybdenum, and tungsten is below about 10 ppm, and most preferably is below about 8 ppm. Such a selection leads to a purer tantalum metal. After the refining process, the vacuum melting process is used to purge low melting point impurities, such as alkydes and transition metals from the tantalum while consolidating the tantalum material into a fully dense, malleable ingot. Then, after this process, the ingot can be mechanically worked, which helps to break-up the as-cast grain structure, to a size and form appropriate for extrusion.
- The high purity tantalum metal preferably may be made by reacting a salt-containing tantalum with at least one agent (e.g. compound or element) capable of reducing this salt to the tantalum metal and further results in the formation of a second salt in a reaction container. The reaction container can be any container typically used for the reaction of metals and should withstand high temperatures on the order of about 800°C to about 1,200°C. For purposes of the present invention, the reaction container or the liner in the reaction container, which comes in contact with the salt-containing tantalum and the agent capable of reducing the salt to tantalum, is made from a material having the same or higher vapor pressure as tantalum at the melting point of the tantalum. The agitator in the reaction container can be made of the same material or can be lined as well. The liner can exist only in the portions of the reaction container and agitator that come in contact with the salt and tantalum. Examples of such metal materials which can form the liner or reaction container include, but are not limited to, metal-based materials made from nickel, chromium, iron, manganese, titanium, zirconium, hafnium, vanadium, ruthenium, cobalt, rhodium, palladium, platinum, or any combination thereof or alloy thereof as long as the alloy material has the same or higher vapor pressure as the melting point of tantalum metal. Preferably, the metal is a nickel or a nickel-based alloy, a chromium or a chromium-based alloy, or an iron or an iron-based alloy. The liner, on the reaction container and/or agitator, if present, typically will have a thickness of from about .5 cm to about 3 cm. Other thicknesses can be used. It is within the bounds of the present invention to have multiple layers of liners made of the same or different metal materials described above.
- The salt-containing tantalum can be any salt capable of having tantalum contained therein such as a potassium-fluoride tantalum. With respect to the agent capable of reducing the salt to tantalum and a second salt in the reaction container, the agent which is capable of doing this reduction is any agent which has the ability to result in reducing the salt-containing tantalum to just tantalum metal and other ingredients (e.g. salt(s)) which can be separated from the tantalum metal, for example, by dissolving the salts with water or other aqueous sources. Preferably, this agent is sodium. Other examples include, but are not limited to, lithium, magnesium, calcium, potassium, carbon, carbon monoxide, ionic hydrogen, and the like. Typically, the second salt which also is formed during the reduction of the salt-containing tantalum is sodium fluoride. Details of the reduction process which can be applied to the present invention in view of the present application are set forth in Kirk-Othmer, Encyclopedia of Chemical Technology, 3rd Edition, Vol. 22, pp. 541-564,
U.S. Patent Nos. 2,950,185 ;3,829,310 ;4,149,876 ; and3,767,456 . Further details of the processing of tantalum can be found inU.S. Patent Nos. 5,234,491 ;5,242,481 ; and4,684,399 . - The above-described process can be included in a multi-step process which can begin with low purity tantalum, such as ore-containing tantalum. One of the impurities that can be substantially present with the tantalum is niobium. Other impurities at this stage are tungsten, silicon, calcium, iron, manganese, etc. In more detail, low purity tantalum can be purified by mixing the low purity tantalum which has tantalum and impurities with an acid solution. The low purity tantalum, if present as an ore, should first be-crushed before being combined with an acid solution. The acid solution should be capable of dissolving substantially all of the tantalum and impurities, especially when the mixing is occurring at high temperatures.
- Once the acid solution has had sufficient time to dissolve substantially all, if not all, of the solids containing the tantalum and impurities, a liquid solid separation can occur which will generally remove any of the undissolved impurities. The solution is further purified by liquid-liquid extraction. Methyl isobutyl ketone (MIBK) can be used to contact the tantalum rich solution, and deionized water can be added to create a tantalum fraction. At th is point, the amount of niobium present in the liquid containing tantalum is generally below about 25 ppm.
- Then, with the liquid containing at least tantalum, the liquid is permitted to crystallize into a salt with the use of vats. Typically, this salt will be a potassium tantalum fluoride salt. More preferably, this salt is K2TaF7. This salt is then reacted with an agent capable of reducing the salt into I) tantalum and 2) a second salt as described above. This compound will typically be pure sodium and the reaction will occur in a reaction container described above. As staled above, the second salt byproducts can be separated from the tantalum by dissolving the salt in an aqueous source and washing away the dissolved salt. At this stage, the purity of the tantalum is typically 99.50 to 99.99% Ta.
- Once the tantalum powder is extracted from this reaction, any impurities remaining, including any contamination from the reaction container, can be removed through melting of the tantalum powder.
- The tantalum powder can be melted a number of ways such as a vacuum arc remelt or an electron beam melting. Generally, the vacuum during the melt will be sufficient to remove substantially any existing impurities from the recovered tantalum so as to obtain high purity tantalum. Preferably, the melting occurs in a high vacuum such as 13.33 mPa (10-4 Torr) or more. Preferably, the pressure above the melted tantalum is lower than the vapor pressures of the metal impurities in order for these impurities, such as nickel and iron to be vaporized. The diameter of the cast ingot should be as large as possible, preferably greater than (9 ½ inches) 24.13cm. The large diameter assures a greater melt surface to vacuum interface which enhances purification rates. In addition, the large ingot diameter allows for a greater amount of cold work to be imparted to the metal during processing, which improves the attributes of the final products. Once the mass of melted tantalum consolidates, the ingot formed will have a purity of 99.995% or higher and preferably 99.999% or higher. The electron beam processing preferably occurs at a melt rate of from about 136.2 to 263.2 kg (300 to about 800 lbs) per hour using 20,000 to 28,000 volts and 15 to 40 amps, and under a vacuum of from about 133.3 to 0.133 mPa (1 X 10-3) to about 1 X 10-6 Torr) More preferably, the melt rate is from about 181.6 to 272.4 kg (400 to about 600 lbs) per hour using from 24,000 to 26,000 volts and 17 to 36 amps, and under a vacuum of from about 13.3 to 1.33 mPa (1 X 10-4 to 1 x 10-5 Torr). With respect to the VAR processing, the melt rate is preferably of (500 to 2,000 lbs) 272.5 to 1090 kg per hour using 25-45 volts and 12,000 to 22,000 amps under a vacuum of 2666 to 13.3 mPa (2 X 10-2 to 1 X 10-4 Torr) and more preferably 436 to 654 kg (800 to 1200 lbs.) per hour at from 30 to 60 volts and 16,000 to 18,000 amps, and under a vacuum of from (2 x 10-2 to 1 x 10-4 Torr.) 2666 to 13.3 mPa.
- The resulting high purity metal ingot preferably has 10 ppm or less metallic impurities and preferably 50 ppm or less 02, 25 ppm or less N2, and 25 ppm or less carbon. If a purity level of about 99.995 is desired, than the resulting high purity metal preferably has metallic impurities of about 50 ppm or less, and preferably 50 ppm or less 02, 25 ppm or less N2, and 25 ppm or less carbon. This ingot can then be used in the manner described above to form the tantalum billets of the present invention.
- As stated earlier, alternatively, niobium billets can be made following the above-described extruding details. Accordingly, a niobium billet having a substantially uniform grain size is obtained. The preferred parameters for the grain size and other characteristics are the same as for the tantalum parameters provided above, taking into account the different melting temperature and other working conditions of niobium (e.g., extruding at lower temperatures, such as from about 1000 °C to about 1650 °C) that are known to those skilled in the art.
- The present invention will be further clarified by the following examples, which are intended to be exemplary of the present invention.
- Two tantalum production ingots produced by triple Electron Beam (3EB) melting were fabricated into 9.53cm (3.75") diameter billets by different processing methods. An ingot identified "Commercial Process" was a 30.5 cm (12") diameter ingot weighing 1578 kg (3476 pounds). Chemistry results from samples taken from the top, middle, and bottom of the ingot are provided in
Figures 2(A) and 2(B) . The ingot was manufactured into 9.53 cm (3.75") diameter rod using standard commercial process shown inFigure 1 . A sample slice, approximately 1.27cm (½") thick by machined diameter was cut from a billet taken from a position representing the middle portion of the forged product. The sample slice was annealed in a vacuum of at least 66.5 mPa (5x10-4 Torr) for 2 hours. Metallographic specimens representing longitudinal cross-sections of the center and edge of the sample slice were polished in accordance to standard metallographic procedures, and etched in a solution to 50HF-50HNO3 for 30-60 seconds. Results of the metallographic examination of the commercially produced tantalum billet product are summarized inFigures 2(A) and 2(B) . - An ingot of the present invention was a 25.4 cm (10") diameter ingot weighing (3734 pounds) 1695 kg. Chemistry results from samples taken from the top, middle, and bottom sections of the ingot are also included in
Figures 2(A) and 2(B) , by reference to Φ and extrusion temperature. This second ingot was cut into 4 sections approximately 50.8 cm (20") long and designated A, B, C, and D. Sections A-D were portioned from the bottom to the top of the ingot, respectively, and hot extruded as described below and shown inFigures 1 and2 (A-B): - Process A: Ingot Section A, Machined to 22.6 cm (8.9") diameter, Canned in Copper. Soaked at 982°C (1800°F) for 6 hours, Extruded from a 24.13 cm (9.5") liner through 10.16cm (4.0") diameter die.
- Process B: Ingot Section B, Machined to 22.6 cm (8.9") diameter, Canned in Copper, Soaked at 1010°C (1850°F) for 6 hours, Extruded from a 24.13 cm (9.5") liner through 10.16 cm (4.0") diameter die.
- Process C: Ingot Section C, Machined to 22.6 cm (8.9") diameter, Canned in Copper, Soaked at 1038 °C (1900°F) for 6 hours, Extruded from a 24.13 cm (9.5") liner through 10.16 cm (4.0") diameter die.
- Process D: Ingot Section D, Machined to 24.13 cm (9.5") diameter, Canned in Copper, Soaked at 1038°C (1900°F) for 6 hours, Extruded from a 26.03 cm (10.25") liner through 10.16 cm (4.0") diameter die.
- Sample slices, each approximately 1.27 cm (½") thick by machined diameter were cut from the center portion of each extruded rod. Each sample slide was cut into wedges, and a wedge from each extruded rod was annealed in a vacuum of at least 66.65 mPA (5x 10-4 torr) for 2 hours at temperatures of 950, 1050, and 1150°C. Metallographic specimens representing longitudinal cross-sections of the center and edge of the sample slice were polished in accordance to standard metallographic procedures, then etched in a solution to 50HF-50HNO3 for 30-60 seconds. Results of the metallographic examination of the extruded tantalum billet products are included in
Figures 2(A) and 2(B) . - Photomicrographs showing the grain structure along the longitudinal plane at the center and edge regions of the commercially produced billet are shown in
Figures 3(A) and 3(B) . Here, the billet axis is perpendicular to the micron scale on the images.Figures 3(A) and 3(B) show many of the issues associated with the microstructure of commercially produced tantalum billet. First, the center of the billet contains a duplex grain structure comprised of broad bands of unrecrystallized material containing small islands of crystallites adjacent to regions containing large, elongated grains. The center of the commercial billet exhibited a grain size range from about 20 to about 245µm., the largest range of grain size observed in all materials examined. Second, the grain structure character along the edge of the commercial billet was fully recrystallized and relatively uniform. This was significantly different than that in the center of the billet, and reflected the microstructural inhomogeneity seen in commercially produced tantalum billets. - Photomicrographs showing the center and edge section of extruded rod A, annealed at 950, 1050, and 1150°C, are provided in
Figures 4(A) and 4(B) ,5(A) and 5(B) , and6(A) and 6(B) , respectively. Comparing the images inFigures 4-6 demonstrate the general effect of annealing temperature on the microstructure. The grain size character seen inFigures 4(A) and 4(B) were similar to that observed in the commercial billet, but with noticeably lesser amount of duplexing. In general, increasing the annealing temperature from 950 to 1050°C did not dramatically increase the average grain size of the extruded tantalum billets, but did enhance grain size uniformity and percent recrystallization. An anneal temperature of 1150°C did promote some grain growth without sacrificing uniformity in the extruded tantalum billets. The higher temperature anneal assured that the microstructure throughout the extruded tantalum billet was uniform and fully recrystallized. - Photomicrographs of the center and edge regions of extruded billets A, B, C, and D, each annealed at 1150°C for 2 hours, are given in
Figures 6(A) and (B) ,7(A) and (B) ,8(A) and (B ), and9(A) and (B) , respectively. Together,Figures 6-9 reveal the influence of extrusion temperature and billet size on the grain structure of the extruded tantalum billet. For the 22.6 cm (8.9") diameter ingot sections extruded from a 24.13 cm (9.5") diameter liner and annealed at 1150°C for 2 hours, increasing the extrusion temperature from 982 to 1038°C (1800 to 1900°F) had a slight effect on increasing the grain size and enhancing grain size uniformity. This trend shows that increasing the extrusion temperature increases the uniformity of deformation and stored energy in the material imparted during extrusion. However, for a 1038°C (1900°F) extrusion temperature, increasing the diameter of the ingot section from 22.6 to 24.13 cm (8.9 to 9.5") and extrusion liner from (9.5 to 10.25") 24.13 to 26.03 cm diameter produced a billet product having an equal or finer average grain size and similar grain size uniformity. This observation demonstrates that increasing the pre-extruded ingot diameter allows for a greater amount of stored energy to be imparted to the extruded billet. - Together, the information developed in this example concludes that the optimum process involves extruding large 24.13 cm (9.5") diameter tantalum ingot sections at a temperature of 1038°C (1900°F) to produce a 10.16 cm (4") diameter as-extruded rod that can machined into 9.53 cm (3.75") diameter billets. A fully recrystallized and relatively uniform microstructure having an average grain size below 100 µm across the entire cross section of the billet is achieved after annealing the extruded tantalum billet at a temperature of 1050-1 150°C.
Claims (18)
- An extruded tantalum or niobium billet having a cylindrical shape having a cross section with an aspect ratio L/D of greater than 0.5 and having a diameter of 3 1/2 inches (8.9 cm) or greater, wherein said extruded tantalum or niobium billet is ingot-derived and has a purity of at least about 99.99% and wherein said extruded tantalum or niobium billet has a substantially uniform grain size throughout the diameter and length of the extruded tantalum or niobium billet after extrusion, and said extruded tantalum or niobium billet has an average grain size throughout the diameter and length of the extruded tantalum or niobium billet of 150 µm (microns) or less, and said extruded tantalum or niobium billet is 98% or more recrystallized.
- The extruded tantalum or niobium billet of claim 1, wherein said average grain size is 100 µm (microns) or less, preferably 50 µm (microns) or less, and more preferably from 25 µm (microns) to 100 µm (microns).
- The extruded tantalum or niobium billet of claim 1, having a purity of at least 99.995%, preferably from 99.995% to 99.999%.
- The extruded tantalum or niobium billet of claim 1, wherein said tantalum billet is fully recrystallized.
- Use of the extruded tantalum or niobium billet of claim 1 for forming a sputtering target.
- Use of the extruded tantalum or niobium billet of claim 1 for forming a capacitor can.
- Use of the extruded tantalum or niobium billet of claim 1 for forming a resistive film layer.
- A process for making the extruded tantalum or niobium billet of claim 1, comprising extruding a tantalum or niobium ingot having a cylindrical shape having a cross section with a diameter of 6 inches (15.2 cm) to 14 inches (35.6 cm) and having a metal purity of a least 99.99% at a temperature of 649 °C to 1621 °C (1200 of to 2950 °F) for tantalum or 538 °C to 1454 °C (1000 °F to 2650 °F) for niobium, and for a sufficient time to at least partially recrystallize the tantalum or niobium billet during extrusion and form said extruded tantalum or niobium billet having a cylindrical shape with an aspect ratio UD greater than 0.5 with a reduced diameter of 3 1/2 inches (8.9 cm) or greater and a substantially uniform grain size throughout the diameter and length of the extruded tantalum or niobium billet from said extruding, wherein said extruded tantalum or niobium billet has an average grain size throughout the diameter and length of the extruded tantalum or niobium billet of 150 µm (microns) or less, and said extruded tantalum or niobium billet is 98% or more recrystallized.
- The process for making the extruded tantalum or niobium billet according to claim 8, further comprising cutting an ingot into at least one starting billet having a cylindrical shape having a cross section with a diameter of 6 inches (15.2 cm) to about 14 inches (35.6 cm) and having a metal purity of at least 99.99% and either applying a protective coating on said starting billet or placing said starting billet in a can;
extruding the starting billet at a temperature 649 °C to 1621 °C (1200 °F to 2950 °F) for tantalum or 538 °C to 1454 °C (1000 °F) to 2650 °F) for niobium, and for a sufficient time to at least partially recrystallize the tantalum or niobium billet during extrusion and to form said extruded tantalum or niobium billet having a cylindrical shape with an aspect ratio UD greater than 0.5 with a reduced diameter of 3 1/2 inches (8.9 cm) or greater and a substantially uniform grain size throughout the diameter and length of the extruded tantalum or niobium billet from said extruding, wherein said extruded tantalum or niobium billet has an average grain size throughout the diameter and length of the extruded tantalum or niobium billet of 150 µm (microns) or less, and said extruded tantalum or niobium billet is 98% or more recrystallized. - The process of claim 8 or 9, wherein said temperature is uniform throughout the extrusion process.
- The process of claim 8 or 9, further comprising the step of water quenching the extruded tantalum or niobium billet after extrusion.
- The process of claim 8 or 9, further comprising machine cleaning the extruded tantalum or niobium billet.
- The process of claim 9, wherein said ingot is obtained by the electron beam melting of a high purity tantalum or niobium powder feedstock.
- The process of claim 9, wherein said protective coating or can is removed after said extruding.
- The process of claim 14, wherein said protective coating is removed by acid washing or machine cleaning, or both.
- The process of claim 8 or 9, further comprising annealing said extruded tantalum or niobium billet.
- The process of claim 16, wherein said annealing occurs at a temperature and for a time sufficient to at least partially recrystallize the extruded tantalum or niobium billet during annealing.
- The process of claim 16, wherein said annealing occurs at a temperature of from 950°C to 1150°C for about 2 hours.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26100101P | 2001-01-11 | 2001-01-11 | |
US261001P | 2001-01-11 | ||
PCT/US2002/023640 WO2002088412A2 (en) | 2001-01-11 | 2002-01-09 | Tantalum and niobium billets and methods of producing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1352106A2 EP1352106A2 (en) | 2003-10-15 |
EP1352106B1 true EP1352106B1 (en) | 2012-11-21 |
Family
ID=22991549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02750302A Expired - Lifetime EP1352106B1 (en) | 2001-01-11 | 2002-01-09 | Tantalum and niobium billets and methods of producing the same |
Country Status (11)
Country | Link |
---|---|
US (2) | US7485198B2 (en) |
EP (1) | EP1352106B1 (en) |
JP (1) | JP4405733B2 (en) |
KR (1) | KR100844636B1 (en) |
CN (1) | CN1257998C (en) |
AU (1) | AU2002319697A1 (en) |
BR (1) | BRPI0206417B1 (en) |
IL (1) | IL156802A0 (en) |
MX (1) | MXPA03006246A (en) |
TW (1) | TWI238198B (en) |
WO (1) | WO2002088412A2 (en) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003008656A2 (en) * | 2001-07-19 | 2003-01-30 | Honeywell International Inc. | Sputtering targets, sputter reactors, methods of forming cast ingots, and methods of forming metallic articles |
US6921470B2 (en) | 2003-02-13 | 2005-07-26 | Cabot Corporation | Method of forming metal blanks for sputtering targets |
US7228722B2 (en) | 2003-06-09 | 2007-06-12 | Cabot Corporation | Method of forming sputtering articles by multidirectional deformation |
EP1681368B1 (en) * | 2003-11-06 | 2021-06-30 | JX Nippon Mining & Metals Corporation | Method to produce a tantalum sputtering target |
WO2005064037A2 (en) * | 2003-12-22 | 2005-07-14 | Cabot Corporation | High integrity sputtering target material and method for producing bulk quantities of same |
WO2005080961A2 (en) * | 2004-02-18 | 2005-09-01 | Cabot Corporation | Ultrasonic method for detecting banding in metals |
US7666243B2 (en) | 2004-10-27 | 2010-02-23 | H.C. Starck Inc. | Fine grain niobium sheet via ingot metallurgy |
US20070044873A1 (en) | 2005-08-31 | 2007-03-01 | H. C. Starck Inc. | Fine grain niobium sheet via ingot metallurgy |
KR20080074195A (en) * | 2005-11-28 | 2008-08-12 | 매티슨 트라이-개스, 인크. | Gas storage container linings formed with chemical vapor deposition |
WO2007103309A2 (en) | 2006-03-07 | 2007-09-13 | Cabot Corporation | Methods of producing deformed metal articles |
US20070251819A1 (en) * | 2006-05-01 | 2007-11-01 | Kardokus Janine K | Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets |
US8250895B2 (en) * | 2007-08-06 | 2012-08-28 | H.C. Starck Inc. | Methods and apparatus for controlling texture of plates and sheets by tilt rolling |
US9095885B2 (en) | 2007-08-06 | 2015-08-04 | H.C. Starck Inc. | Refractory metal plates with improved uniformity of texture |
EP2452763A1 (en) | 2008-03-05 | 2012-05-16 | Southwire Company | Graphite die with protective niobium layer and associated die-casting method |
PL2556176T3 (en) | 2010-04-09 | 2020-08-24 | Southwire Company, Llc | Ultrasonic degassing of molten metals |
US8652397B2 (en) | 2010-04-09 | 2014-02-18 | Southwire Company | Ultrasonic device with integrated gas delivery system |
CN101880847B (en) * | 2010-06-18 | 2011-12-07 | 江门富祥电子材料有限公司 | Heat treatment method of tantalum crucible |
CN101920435B (en) * | 2010-08-20 | 2012-01-11 | 宁夏东方钽业股份有限公司 | Preparation process of sputtering tantalum ring |
CN102489951B (en) * | 2011-12-03 | 2013-11-27 | 西北有色金属研究院 | Preparation method of niobium tubular target materials for sputtering |
CN102794617A (en) * | 2012-09-09 | 2012-11-28 | 西安方科新材料科技有限公司 | Preparation method of tubular niobium target for magnetron sputtering |
KR101401355B1 (en) | 2012-11-21 | 2014-06-02 | 한국과학기술연구원 | A micro channel reactor for hydrocarbon reforming |
CN103866244B (en) * | 2012-12-18 | 2017-04-19 | 宁夏东方钽业股份有限公司 | Niobium tubular target material and producing method thereof |
CN103009000B (en) * | 2012-12-18 | 2015-05-27 | 宁夏东方钽业股份有限公司 | Niobium target and preparation method of niobium target |
CN103219459B (en) * | 2013-04-28 | 2015-12-09 | 宁夏东方钽业股份有限公司 | Niobium Superconducting pipe and preparation method thereof |
KR20170141280A (en) * | 2013-10-01 | 2017-12-22 | 제이엑스금속주식회사 | Tantalum sputtering target |
US9528167B2 (en) | 2013-11-18 | 2016-12-27 | Southwire Company, Llc | Ultrasonic probes with gas outlets for degassing of molten metals |
CN104259244B (en) * | 2014-09-10 | 2016-02-10 | 山东尧程新材料科技有限公司 | A kind of moulding process of Nb pipe |
US10233515B1 (en) | 2015-08-14 | 2019-03-19 | Southwire Company, Llc | Metal treatment station for use with ultrasonic degassing system |
TW201738395A (en) * | 2015-11-06 | 2017-11-01 | 塔沙Smd公司 | Method of making a tantalum sputtering target with increased deposition rate |
CN105441846B (en) * | 2016-01-22 | 2017-08-11 | 重庆大学 | A kind of heat treatment method of target High-purity Tantalum plate |
CN106041421B (en) * | 2016-06-20 | 2018-05-08 | 安徽省瑞杰锻造有限责任公司 | A kind of stabilizing treatment technique of forging process |
EP3346017B1 (en) * | 2017-01-10 | 2021-09-15 | Heraeus Deutschland GmbH & Co. KG | Method for cutting refractory metals |
CN111819016A (en) | 2018-03-05 | 2020-10-23 | 全球先进金属美国股份有限公司 | Spherical tantalum powder, products containing same and method for making same |
KR102389784B1 (en) | 2018-03-05 | 2022-04-22 | 글로벌 어드밴스드 메탈스 유에스에이, 아이엔씨. | Anodes and capacitors containing spherical powder |
CN109652778A (en) * | 2019-01-28 | 2019-04-19 | 西北有色金属研究院 | A kind of preparation method of the big specification fine grain niobium pipe target of plated film |
CN113574203A (en) * | 2019-03-26 | 2021-10-29 | Jx金属株式会社 | Niobium sputtering target |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL252366A (en) | 1958-06-13 | |||
US3497402A (en) * | 1966-02-03 | 1970-02-24 | Nat Res Corp | Stabilized grain-size tantalum alloy |
US3767456A (en) | 1971-09-07 | 1973-10-23 | Fansteel Inc | Chemical vapor deposition of steel with tantalum and columbium |
US3829310A (en) | 1973-04-30 | 1974-08-13 | Norton Co | High surface area valve metal powder |
US4141719A (en) * | 1977-05-31 | 1979-02-27 | Fansteel Inc. | Tantalum metal powder |
US4149876A (en) * | 1978-06-06 | 1979-04-17 | Fansteel Inc. | Process for producing tantalum and columbium powder |
JPS62104180A (en) * | 1985-10-31 | 1987-05-14 | Toyo Soda Mfg Co Ltd | Josephson element composed by using superhighpurity niobium |
US4684399A (en) | 1986-03-04 | 1987-08-04 | Cabot Corporation | Tantalum powder process |
JPH0621346B2 (en) * | 1986-06-11 | 1994-03-23 | 日本鉱業株式会社 | Method for manufacturing high-purity metal tantalum target |
DE3712281A1 (en) | 1987-04-10 | 1988-10-27 | Heraeus Gmbh W C | METHOD FOR PRODUCING HIGHLY DUCTILE TANTALE SEMI-FINISHED PRODUCTS |
US5242481A (en) | 1989-06-26 | 1993-09-07 | Cabot Corporation | Method of making powders and products of tantalum and niobium |
US5234491A (en) | 1990-05-17 | 1993-08-10 | Cabot Corporation | Method of producing high surface area, low metal impurity |
JPH06264232A (en) | 1993-03-12 | 1994-09-20 | Nikko Kinzoku Kk | Ta sputtering target and its production |
US5482672A (en) * | 1995-02-09 | 1996-01-09 | Friedman; Ira | Process for extruding tantalum and/or niobium |
US6569270B2 (en) | 1997-07-11 | 2003-05-27 | Honeywell International Inc. | Process for producing a metal article |
JPH1180942A (en) | 1997-09-10 | 1999-03-26 | Japan Energy Corp | Ta sputtering target, its production and assembled body |
US6323055B1 (en) * | 1998-05-27 | 2001-11-27 | The Alta Group, Inc. | Tantalum sputtering target and method of manufacture |
US6348139B1 (en) | 1998-06-17 | 2002-02-19 | Honeywell International Inc. | Tantalum-comprising articles |
KR100600908B1 (en) * | 1998-06-29 | 2006-07-13 | 가부시끼가이샤 도시바 | Sputter target |
US6193821B1 (en) | 1998-08-19 | 2001-02-27 | Tosoh Smd, Inc. | Fine grain tantalum sputtering target and fabrication process |
US6348113B1 (en) | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
JP2000212678A (en) * | 1999-01-21 | 2000-08-02 | Japan Energy Corp | High purity tantalum for thin film formation and its production |
US6331233B1 (en) | 2000-02-02 | 2001-12-18 | Honeywell International Inc. | Tantalum sputtering target with fine grains and uniform texture and method of manufacture |
JP5341292B2 (en) * | 2000-05-22 | 2013-11-13 | キャボット コーポレイション | Niobium sputter element, niobium metal and articles containing the same |
-
2002
- 2002-01-08 IL IL15680202A patent/IL156802A0/en unknown
- 2002-01-08 CN CNB028052080A patent/CN1257998C/en not_active Expired - Fee Related
- 2002-01-09 MX MXPA03006246A patent/MXPA03006246A/en unknown
- 2002-01-09 EP EP02750302A patent/EP1352106B1/en not_active Expired - Lifetime
- 2002-01-09 US US10/042,549 patent/US7485198B2/en not_active Expired - Fee Related
- 2002-01-09 KR KR1020037009209A patent/KR100844636B1/en active IP Right Grant
- 2002-01-09 JP JP2002585689A patent/JP4405733B2/en not_active Expired - Fee Related
- 2002-01-09 AU AU2002319697A patent/AU2002319697A1/en not_active Abandoned
- 2002-01-09 WO PCT/US2002/023640 patent/WO2002088412A2/en active Application Filing
- 2002-01-09 BR BRPI0206417-0A patent/BRPI0206417B1/en not_active IP Right Cessation
- 2002-01-11 TW TW091100303A patent/TWI238198B/en not_active IP Right Cessation
-
2008
- 2008-11-12 US US12/269,077 patent/US8231744B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TWI238198B (en) | 2005-08-21 |
CN1492942A (en) | 2004-04-28 |
MXPA03006246A (en) | 2004-06-25 |
AU2002319697A1 (en) | 2002-11-11 |
US8231744B2 (en) | 2012-07-31 |
KR100844636B1 (en) | 2008-07-07 |
US20090068434A1 (en) | 2009-03-12 |
CN1257998C (en) | 2006-05-31 |
JP2005501175A (en) | 2005-01-13 |
KR20040080918A (en) | 2004-09-20 |
WO2002088412A3 (en) | 2003-04-17 |
EP1352106A2 (en) | 2003-10-15 |
JP4405733B2 (en) | 2010-01-27 |
WO2002088412A2 (en) | 2002-11-07 |
US7485198B2 (en) | 2009-02-03 |
BRPI0206417B1 (en) | 2015-08-25 |
BR0206417A (en) | 2006-01-24 |
IL156802A0 (en) | 2004-02-08 |
US20020157736A1 (en) | 2002-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1352106B1 (en) | Tantalum and niobium billets and methods of producing the same | |
US6348113B1 (en) | High purity tantalum, products containing the same, and methods of making the same | |
JP5341292B2 (en) | Niobium sputter element, niobium metal and articles containing the same | |
US7017382B2 (en) | Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions | |
US20050155677A1 (en) | Tantalum and other metals with (110) orientation |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20030724 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR |
|
AX | Request for extension of the european patent |
Extension state: AL LT LV MK RO SI |
|
17Q | First examination report despatched |
Effective date: 20100721 |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: GLOBAL ADVANCED METALS, USA, INC. |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: REF Ref document number: 585126 Country of ref document: AT Kind code of ref document: T Effective date: 20121215 |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R096 Ref document number: 60244086 Country of ref document: DE Effective date: 20130117 |
|
REG | Reference to a national code |
Ref country code: NL Ref legal event code: VDEP Effective date: 20121121 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20121121 Ref country code: ES Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130304 Ref country code: SE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20121121 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20121121 Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130222 Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130321 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20121121 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20121121 Ref country code: MC Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20130131 Ref country code: NL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20121121 |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 20130221 |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: MM4A |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: ST Effective date: 20130930 |
|
26N | No opposition filed |
Effective date: 20130822 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20130131 Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20130131 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20130131 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R097 Ref document number: 60244086 Country of ref document: DE Effective date: 20130822 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20130221 Ref country code: IE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20130109 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CY Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20121121 Ref country code: TR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20121121 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LU Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20130109 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20191224 Year of fee payment: 19 Ref country code: AT Payment date: 20191227 Year of fee payment: 19 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R119 Ref document number: 60244086 Country of ref document: DE |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: MM01 Ref document number: 585126 Country of ref document: AT Kind code of ref document: T Effective date: 20210109 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: AT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20210109 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20210803 |